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New thermoelectric materials comprise highly [111]-oriented twinned group IV alloys on the basal plane of trigonal substrates, which exhibit a high thermoelectric figure of merit and good material performance, and devices made with these materials.
High temperature thermoelectric device sublimation effects are compared for rare earth sulfides, selenides, and state-of-the-art Si-Ge alloys. Although rare earth calcogenides can potentially exhibit superior sublimation characteristics, the state-of-the-art Si-Ge alloy with silicon nitride sublimation-inhibitive coating has been tested to 1000 C. Attention is given to the ceramic electrolyte cells, forming within electrical and thermal insulation, which affect leakage conductance measurements in Si-Ge thermoelectric generators.
Topics covered include: Apparatus Characterizes Transient Voltages in Real Time; Measuring Humidity in Sealed Glass Encasements; Adaptable System for Vehicle Health and Usage Monitoring; Miniature Focusing Time-of-Flight Mass Spectrometer; Cryogenic High-Sensitivity Magnetometer; Wheel Electrometer System; Carbon-Nanotube Conductive Layers for Thin-Film Solar Cells; Patch Antenna Fed via Unequal-Crossed-Arm Aperture; LC Circuits for Diagnosing Embedded Piezoelectric Devices; Nanowire Thermoelectric Devices; Code for Analyzing and Designing Spacecraft Power System Radiators; Decision Support for Emergency Operations Centers; NASA Records Database; Real-Time Principal- Component Analysis; Fuzzy/Neural Software Estimates Costs of Rocket- Engine Tests; Multicomponent, Rare-Earth-Doped Thermal-Barrier Coatings; Reactive Additives for Phenylethynyl-Containing Resins; Improved Gear Shapes for Face Worm Gear Drives; Alternative Way of Shifting Mass to Move a Spherical Robot; Parylene C as a Sacrificial Material for Microfabrication; In Situ Electrochemical Deposition of Microscopic Wires; Improved Method of Manufacturing SiC Devices; Microwave Treatment of Prostate Cancer and Hyperplasia; Ferroelectric Devices Emit Charged Particles and Radiation; Dusty-Plasma Particle Accelerator; Frozen-Plug Technique for Liquid-Oxygen Plumbing; Shock Waves in a Bose-Einstein Condensate; Progress on a Multichannel, Dual-Mixer Stability Analyzer; Development of Carbon- Nanotube/Polymer Composites; Thermal Imaging of Earth for Accurate Pointing of Deep-Space Antennas; Modifications of a Composite-Material Combustion Chamber; Modeling and Diagnostic Software for Liquefying- Fuel Rockets; and Spacecraft Antenna Clusters for High EIRP.
A cooling device for lowering the temperature of a heat-dissipating device. The cooling device includes a heat-conducting substrate (composed, e.g., of diamond or another high thermal conductivity material) disposed in thermal contact with the heat-dissipating device. During operation, heat flows from the heat-dissipating device into the heat-conducting substrate, where it is spread out over a relatively large area. A thermoelectric cooling material (e.g., a Bi.sub.2 Te.sub.3 -based film or other thermoelectric material) is placed in thermal contact with the heat-conducting substrate. Application of electrical power to the thermoelectric material drives the thermoelectric material to pump heat into a second heat-conducting substrate which, in turn, is attached to a heat sink.
The apparatus would include a solar photovoltaic panel mounted on the roof and a panellike assembly mounted in a window opening. The window-mounted assembly would include a stack of thermoelectric devices sandwiched between two heat sinks. A fan would circulate interior air over one heat sink. Another fan would circulate exterior air over the other heat sink. The fans and the thermoelectric devices would be powered by the solar photovoltaic panel. By means of a double-pole, double-throw switch, the panel voltage fed to the thermoelectric stack would be set to the desired polarity: For cooling operation, the chosen polarity would be one in which the thermoelectric devices transport heat from the inside heat sink to the outside one; for heating operation, the opposite polarity would be chosen. Because thermoelectric devices are more efficient in heating than in cooling, this apparatus would be more effective as a heater than as a cooler. However, if the apparatus were to include means to circulate air between the outside and the inside without opening the windows, then its effectiveness as a cooler in a hot, sunny location would be increased.
Apparatus including a power supply (202) and control system is provided for maintaining the temperature within an enclosed structure (40) using thermoelectric devices (92). The apparatus may be particularly beneficial for use with a refrigerator (20) having superinsulation materials (46) and phase change materials (112) which cooperate with the thermoelectric device (92) to substantially enhance the overall operating efficiency of the refrigerator (20). The electrical power supply (202) and control system allows increasing the maximum power capability of the thermoelectric device (92) in response to increased heat loads within the refrigerator (20). The electrical power supply (202) and control system may also be used to monitor the performance of the cooling system (70) associated with the refrigerator (20).
In a proposed alternative to previous approaches to making hot-shoe contacts to the legs of thermoelectric devices, one relies on differential thermal expansion to increase contact pressures for the purpose of reducing the electrical resistances of contacts as temperatures increase. The proposed approach is particularly applicable to thermoelectric devices containing p-type (positive-charge-carrier) legs made of a Zintl compound (specifically, Yb14MnSb11) and n-type (negative charge-carrier) legs made of SiGe. This combination of thermoelectric materials has been selected for further development, primarily on the basis of projected thermoelectric performance. However, it is problematic to integrate, into a practical thermoelectric device, legs made of these materials along with a metal or semiconductor hot shoe that is required to be in thermal and electrical contact with the legs. This is partly because of the thermal-expansion mismatch of these materials: The coefficient of thermal expansion (CTE) of SiGe is 4.5 x 10(exp -6) C (exp -1), while the CTE of Yb14MnSb11 is 20 x 10(exp -6) C(exp -1). Simply joining a Yb14MnSb11 and a SiGe leg to a common hot shoe could be expected to result in significant thermal stresses in either or both legs during operation. Heretofore, such thermal stresses have been regarded as disadvantageous. In the proposed approach, stresses resulting from the CTE mismatch would be turned to advantage.
This paper is concerned with the use of thermoelectric coolers (TECs) to cool charge-coupled devices (CCDs). Heat inputs to the CCD from the warmer environment are identified, and generalized graphs are used to approximate the major heat inputs. A method of choosing and estimating the power consumption of the TEC is discussed. This method includes the use of TEC performance information supplied by the manufacturer and equations derived from this information. Parameters of the equations are tabulated to enable the reader to use the TEC performance equations for choosing and estimating the power needed for specific TEC applications.
The steady-state heat-pumping capabilities of thermoelectric devices are examined for spacecraft in earth orbit, using a simple model. Thermoelectric parameters for a standard Bi2Te, alloy are fitted with fourth-order polynomials in temperature. Parameters are used which are the average for the temperature difference across the p-n couple. Internal spacecraft temperatures are varied from 270 to 330 K, and absorbed incident radiation fluxes are varied from zero to 700 W per sq m. It is found that heat rejection can be optimized with respect to thermoelectric device and radiator fin geometries, as well as with respect to input electrical power and that these devices are most useful on the surfaces with highest incident radiant power. Maximum heat fluxes which can be pumped out of the spacecraft are on the order of 50-160 W per sq m for the various thermal environments examined. Input electrical powers corresponding to these maximum heat fluxes range from about 50-300 W per sq m. However, efficiency is greatly improved by operation at lower input-power levels.
The Jet Propulsion Laboratory has been actively pursuing the development of thermoelectric micro/nanodevices that can be fabricated using a combination of electrochemical deposition and integrated circuit processing techniques.
A parameterized orthogonal tight-binding mathematical model of the quantum electronic structure of the bismuth telluride molecule has been devised for use in conjunction with a semiclassical transport model in predicting the thermoelectric properties of doped bismuth telluride. This model is expected to be useful in designing and analyzing Bi2Te3 thermoelectric devices, including ones that contain such nano - structures as quantum wells and wires. In addition, the understanding gained in the use of this model can be expected to lead to the development of better models that could be useful for developing other thermoelectric materials and devices having enhanced thermoelectric properties. Bi2Te3 is one of the best bulk thermoelectric materials and is widely used in commercial thermoelectric devices. Most prior theoretical studies of the thermoelectric properties of Bi2Te3 have involved either continuum models or ab-initio models. Continuum models are computationally very efficient, but do not account for atomic-level effects. Ab-initio models are atomistic by definition, but do not scale well in that computation times increase excessively with increasing numbers of atoms. The present tight-binding model bridges the gap between the well-scalable but non-atomistic continuum models and the atomistic but poorly scalable ab-initio models: The present tight-binding model is atomistic, yet also computationally efficient because of the reduced (relative to an ab-initio model) number of basis orbitals and flexible parameterization of the Hamiltonian.
Nanotechnology based thermoelectric materials are considered attractive for developing highly efficient thermoelectric devices. Nano-structured thermoelectric materials are predicted to offer higher ZT over bulk materials by reducing thermal conductivity and increasing electrical conductivity. Consolidation of nano-structured powders into dense materials without losing nanostructure is essential towards practical device development. Using the gas atomization process, amorphous nano-structured powders were produced. Shockwave consolidation is accomplished by surrounding the nanopowder-containing tube with explosives and then detonating. The resulting shock wave causes rapid fusing of the powders without the melt and subsequent grain growth. We have been successful in generating consolidated nano-structured bismuth telluride alloy powders by using the shockwave technique. Using these consolidated materials, several types of thermoelectric power generating devices have been developed. Shockwave consolidation is anticipated to generate large quantities of nanostructred materials expeditiously and cost effectively. In this paper, the technique of shockwave consolidation will be presented followed by Seebeck Coefficient and thermal conductivity measurements of consolidated materials. Preliminary results indicate a substantial increase in electrical conductivity due to shockwave consolidation technique.
New skutterudite phases including Ru.sub.0.5 Pd.sub.0.5 Sb.sub.3, RuSb.sub.2 Te, and FeSb.sub.2 Te, have been prepared having desirable thermoelectric properties. In addition, a novel thermoelectric device has been prepared using skutterudite phase Fe.sub.0.5 Ni.sub.0.5 Sb.sub.3. The skutterudite-type crystal lattice structure of these semiconductor compounds and their enhanced thermoelectric properties results in semiconductor materials which may be used in the fabrication of thermoelectric elements to substantially improve the efficiency of the resulting thermoelectric device. Semiconductor materials having the desired skutterudite-type crystal lattice structure may be prepared in accordance with the present invention by using powder metallurgy techniques. Measurements of electrical and thermal transport properties of selected semiconductor materials prepared in accordance with the present invention, demonstrated high Hall mobilities and good Seebeck coefficients. These materials have low thermal conductivity and relatively low electrical resistivity, and are good candidates for low temperature thermoelectric applications.
A refrigerator is provided which combines the benefits of superinsulation materials with thermoelectric devices and phase change materials to provide an environmentally benign system that is energy efficient and can maintain relatively uniform temperatures for extended periods of time with relatively low electrical power requirements. The refrigerator includes a thermoelectric assembly having a thermoelectric device with a hot sink and a cold sink. The superinsulation materials include a plurality of vacuum panels. The refrigerator is formed from an enclosed structure having a door. The vacuum panels may be contained within the walls of the enclosed structure and the door. By mounting the thermoelectric assembly on the door, the manufacturer of the enclosed structure is simplified and the overall R rating of the refrigerator increased. Also an electrical motor and propellers may be mounted on the door to assist in the circulation of air to improve the efficiency of the cold sink and the hot sink. A propeller and/or impeller is preferably mounted within the refrigerator to assist in establishing the desired air circulation flow path.
An enclosed structure is provided for use with a refrigerator having a door assembly. The enclosed structure preferably contains superinsulation materials and a plurality of matching drawers. The enclosed structure preferably includes corner joints which minimize thermal energy transfer between adjacent superinsulation panels. The refrigerator may include a cooling system having a thermoelectric device for maintaining the temperature within the refrigerator at selected values. If desired, a fluid cooling system and an active gasket may also be provided between the door assembly and the enclosed structure. The fluid cooling system preferably includes a second thermoelectric device to maintain the temperature of fluid flowing through the active gasket at a selected value. The drawers associated with the refrigerator may be used for gathering, processing, shipping and storing food or other perishable items.
Prototype controlled-temperature enclosure containing thermoelectric devices developed to house electronically scanned array of pressure sensors. Enclosure needed because (1) temperatures of transducers in sensors must be maintained at specified set point to ensure proper operation and calibration and (2) sensors sometimes used to measure pressure in hostile environments (wind tunnels in original application) that are hotter or colder than set point. Thus, depending on temperature of pressure-measurement environment, thermoelectric devices in enclosure used to heat or cool transducers to keep them at set point.
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