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DOE OSTI2025

Electrochemical-Mechanical Coupling Strongly Affects the Performance of Nanopore, Thin-Film, and Solid-State Batteries

Here, the present study focuses on the electrochemical-mechanical (ECM) coupling effects of a thin-film, solid-state battery with only stiff, ceramic materials, in contrast to prior investigations that focus on individual active material particles or aggregations of particles. We model the impacts of ECM couplings including stress-transport and stress-equilibrium potential on the full-cell performance and potential mechanical failure modes of a thin-film battery conformally deposited in a nanopore scaffold, which is an experimentally achievable device. Model results indicate electrode volume changes due to lithium insertion or removal, along with mechanical boundary conditions, result in stress gradients that alter the lithium-ion flux, reduce lithium concentration gradients, and improve cell rate capability. However, the high stress levels in the cell can also lead to mechanics-related failure such as the separation of cell layers. For the parameter set in this work, stress-transport coupling has a much greater influence on rate capability than stress-potential coupling. Optimization of thin-film batteries to harness the benefits of ECM coupling effects requires leveraging geometric design and material selection. The current work underscores the need for further theoretical and experimental investigation into ECM coupling effects in thin-film batteries to enhance their understanding and design optimization.

25 ENERGY STORAGE↗

DOE OSTI2024

A brief review on strain engineering of ferroelectric K x Na 1- x NbO 3 epitaxial thin films: Insights from phase-field simulations

Strains play a pivotal role in determining the phase equilibrium, domain configuration, and functional properties of the low-dimensional ferroelectrics. There is growing interest in the strain engineering of ferroelectric K x Na 1- x NbO 3 (KNN) epitaxial thin films, which exhibit excellent physical properties and promise as eco-friendly alternatives to lead-based ferroelectrics for microdevice applications. Further, advances have been made in understanding the phase equilibria and transitions, domains and domain walls, and their relations to the physical properties of KNN epitaxial thin films using a combination of experiments and theoretical modeling, particularly phase-field simulations. Here, we review recent progress in these aspects and showcase the phase-field method for establishing strain phase diagrams, elucidating the domain and domain wall structures at equilibrium, and predicting the structure–property relationships in ferroelectric KNN thin films. We also discuss challenges and opportunities to further advance our understanding of KNN thin films and potentially unlock new functionalities by leveraging phase-field simulations.

36 MATERIALS SCIENCE↗

DOE OSTI2024

Fabrication of metal-organic framework thin films for luminescent sensing applications

Metal−organic frameworks (MOFs) have emerged as an exciting material class due to their nearly infinite design space: an inexhaustible combination of metal centers, organic linkers, and reaction conditions may be leveraged to obtained desired optical, physical, and chemical properties. This rich synthetic diversity enables properties such as pore dimensions and functionality to be rationally tailored for highly selective and sensitive detection of target analytes. Luminescent MOF-based sensors in particular offer advantages including low cost, portability, and ease-of-use. Often, performance is maximized by utilizing the luminescent MOF in thin film form, for example by integrating the film onto an optical fiber, yet the synthesis of high-quality MOF thin films often requires tedious, expensive, and/or slow approaches. Here, we demonstrate a rapid, simple strategy for growing copper MOFs using metal oxide templates; the concept is first demonstrated with a well-studied system, copper-1,3,5-benznetricarboxylate (Cu-BTC). Variables such as the choice of solvent, pH, and the choice of the copper salt anion all govern thin film quality. We then extend this method to synthesize a solvent and metal-responsive copper MOF that is particularly effective at detecting aluminum, an economically critical metal, at trace concentrations using a fully portable luminescence spectrometer. Taken together, this work demonstrates a convenient, versatile, and sustainable method for developing high quality MOF thin film-based optical sensors.

Crawford, Scott↗

DOE OSTI2025

Topological Surface and Bulk States in Dirac Semimetal Alpha-Sn Thin Films

Supported by this DOE grant, we made significant advancements in the study and application of topological surface states (TSS) in topological Dirac semimetal (TDS) α-Sn thin films. Our key findings include: (1) the successful growth of TDS α-Sn thin films via sputtering, an industry-friendly technique, on Si and InSb substrates, marking a breakthrough over previous molecular beam epitaxy methods, (2) the demonstration of enhanced damping in adjacent NiFe thin films due to the TSS of α-Sn, (3) the first observation of a strong bilinear magneto-electric resistance (BMER) effect in TDS materials at room temperature, with responses surpassing previous results, (4) the identification of quantum oscillations in α-Sn thin films associated with the TSS, revealing critical quantum transport characteristics such as Berry phase and quantum mobility, (5) the first experimental observation of negative magnetoresistance in α-Sn, and (6) the demonstration of spinorbit torque-driven, field-free magnetization switching in an α-Sn/Ag/CoFeB trilayer, achieving efficiency levels higher than conventional heavy-metal-based structures, highlighting the essential role of TSS in enabling the switching process.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2025

Development of Thin Gap GEM-µRWELL Hybrid Detectors at Jefferson Lab

Over the past few decades, Micro Pattern Gaseous Detector (MPGD) technologies have been increasingly adopted as tracking detector options in High Energy and Nuclear Physics experiments thanks to their good spatial resolution, high-rate capability, stability and more importantly their ability for large area coverage at a relatively low cost compared to the alternative. The thin gap GEM-µRWELL hybrid detector is the latest addition to the MPGD family, that was introduced to vastly improve the spatial resolution capability of gaseous trackers when deployed in the barrel region to cover large angular acceptance of the central tracker in a collider experiment. In this talk, I will re-introduce the concept and motivation for the development of thin gap GEM-µRWELL hybrid technology with an emphasis on the initial studies that establish the proof-of-concept of the technology. I will then discuss the more recent results from latest beam test campaign at Jefferson Lab in May 2025 to study detector efficiency performance with various gas mixtures. I will also briefly present the ongoing activities to develop large area thin gap GEM-µRWELL tracking detectors for the ePIC experiment of the future Electron Ion Collider as well as the exploration of the technology to provide large area tracking options to the muon system of experiments at a future Higgs Factory Collider such as the FCC-ee for example. Finally, I will conclude with some perspectives on new ideas under exploration to develop the next generation of thin gap MPGD technologies with enhanced timing and spatial resolution capabilities

Gnanvo, Kondo [Thomas Jefferson National Accelerat↗

DOE OSTI2025

Microscale Metal Additive Manufacturing by Solid‐State Impact Bonding of Shaped Thin Films

The deposition of device-grade inorganic materials is one key challenge toward the implementation of additive manufacturing (AM) in microfabrication, and to that end, a broad range of physico-chemical principles has been explored for 3D fabrication with micro- and nanoscale resolution. Yet, for metals, a process that achieves material quality rivalling that of established thin-film deposition methods, and at the same time, has the potential to combine high throughput production with a broad palette of processable materials, is still lacking. Here, the kinetic, solid-state bonding of metal thin films for the additive assembly of high-purity, high-density metals with micrometer-scale precision is introduced. Indirect laser ablation accelerates micrometer-thick gold films to hundreds of meters per second without their heating or ablation. Their subsequent impact on the substrate above a critical velocity forms a permanent, metallic bond in the solid state. Stacked layers are of high density (>99%). By defining thin-film layers with established lithographic methods prior to launch, a variable feature size (2–50 µm), arbitrary shape of bonded layers, and parallel transfer of up to 36 independent film units in a single shot, is demonstrated. Thus, the solid-state kinetic bonding principle as a viable and potentially versatile route for micro-scale AM of metals is established.

3D printing↗

DOE OSTI2025

Thin film combinatorial sputtering of TaTiHfZr refractory compositionally complex alloys for rapid materials discovery

Many applications from advanced nuclear reactors to aerospace and automotive industries require materials to operate in extreme environments. In search of new materials that can operate in these extremes, the present work explores this space whereby: (1) guided by atomistic and thermodynamic calculations we utilize thin film combinatorial synthesis to rapidly explore mechanical and thermal properties in a broad range of refractory compositionally complex alloys, and (2) observe transformation induced plasticity via oscillations in the thin film nanoindentation load depth curves that are attributed to, (3) a stress-induced HCP-to-BCC phase transformation in the resulting nanogranular microstructure, which to our knowledge has not been observed before in this alloy system; and finally (4) scale to bulk materials to compare the thin film results.

36 MATERIALS SCIENCE↗

DOE OSTI2026

Thin-Film Stabilization and Magnetism of η -Carbide-Type Iron Nitrides

Transition-metal nitrides in ..eta..-carbide-type structures exhibit unusual bonding motifs and proximity to magnetic instabilities. Yet they remain unexplored in thin-film form due to the difficulty of stabilizing nitrogen-poor ternaries among competing phases. Here, we report the thin-film synthesis and phase-stability mapping of the ..eta..-nitride systems Fe-W-N and Fe-Mo-N. Amorphous Fe-M-N (M = W, Mo) combinatorial libraries deposited by reactive cosputtering crystallize upon rapid thermal annealing, enabling systematic identification of synthesis windows as a function of composition and annealing temperature. Using laboratory powder X-ray diffraction and synchrotron grazing incidence wide-angle X-ray scattering, we establish that Fe 3 Mo 3 N-based ..eta..-carbide phases form over a substantially broader compositional and thermal range than W-based compositions, where ..eta.. structures are stabilized only when the films are Fe-rich. These trends are rationalized using mixed chemical-potential vs composition phase diagrams that capture the narrow nitrogen chemical-potential stability of ..eta..-nitrides. Magnetic measurements reveal that ferromagnetism is induced in Fe-rich Fe 3.54 Mo 2.46 N with a small exchange-bias-like response that is absent in Fe 3 W 3 N-based compositions, highlighting the sensitivity of magnetic behavior to modest deviations from stoichiometry. This work establishes practical thin-film synthesis routes for ..eta..-nitride materials and demonstrates how composition can be tuned to access emergent magnetic phenomena in these complex nitrides.

36 MATERIALS SCIENCE↗

DOE OSTI2025

LiNi0.8Mn0.1Co0.1O2 Thin Films Prepared by Polymer-Assisted Deposition for the Study of Cathode-Electrolyte Interphases in Lithium-Ion Batteries

High-nickel layered oxide cathodes such as LiNi0.8Mn0.1Co0.1O2 (NMC811) are critical for next-generation lithium-ion batteries (LIBs) due to their superior energy density and reduced reliance on cobalt. However, many Ni-rich cathodes suffer from rapid capacity fade and structural instability originating from complex interfacial reactions at the cathode-electrolyte interface. Traditional composite electrodes exhibit degradation mechanisms that are challenging to quantitatively understand due to additives, including binders and carbon black. In this study, we demonstrate a new synthesis approach for binder- and additive-free NMC811 thin films using polymer-assisted deposition (PAD). PAD-NMC811 are model thin-film cathodes for investigating interfacial phenomena that can be obscured in composite cathodes. Structural and chemical characterization by X-ray diffraction, soft X-ray absorption spectroscopy, and atomic force microscopy show that PAD-NMC811 films possess high phase purity, crystallinity, chemical homogeneity, and morphological uniformity. Electrochemical analyses using cyclic voltammetry and galvanostatic cycling revealed electrochemical behavior consistent with that of composite electrodes, along with a moderate capacity fade indicative of cathode-electrolyte interphase (CEI) formation. Our findings illustrate the effectiveness of PAD synthesis of thin films tailored for detailed mechanistic studies, which offer critical insights into CEI evolution and cathode degradation pathways.

25 ENERGY STORAGE↗

DOE OSTI2025

In Situ Analysis of Electron-Induced Chemical Transformations in Vapor-Phase-Synthesized Al-Based Inorganic–Organic Hybrid Thin Films for EUV Resist Platform

The rapid advancement and stringent requirements of extreme ultraviolet (EUV) lithography technology necessitate the development of advanced photoresist systems for next-generation microelectronics. Recent studies have demonstrated that inorganic-based hybrid photoresists offer notable improvements in EUV sensitivity, etch resistance, and greater insusceptibility to pattern collapse compared to their purely organic counterparts. However, variations in the synthesis/coating approaches and chemistry of inorganic–organic photoresists can result in distinct exposure mechanisms. In this work, an Al-based hybrid thin film resist system synthesized via molecular (atomic) layer deposition (MLD or MALD) is explored, focusing on its electron-beam and EUV patterning mechanisms. The Al-based hybrid thin films are deposited using trimethylaluminum (TMA) and the organic precursor hydroquinone, exhibiting a saturated growth rate within the temperature range of 150–200°C. In diluted tetramethylammonium hydroxide (TMAH)-based developer solutions, the electron-irradiated Al-based hybrid thin film system behaves as a negative tone resist, achieving a sensitivity of 10.4 mC/cm 2 at 0.1 kV electron beam lithography (EBL). Chemical changes induced by electron exposure are also analyzed in this study using X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, and a unique infrared spectroscopy setup, revealing the potential cross-linking pathways. To further correlate the electron-induced chemical transformations with those mediated by EUV irradiations, a combination of X-ray photoemission electron microscopy/low-energy electron microscopy (XPEEM/LEEM) system is also employed. In conclusion, this study provides critical insights into the mechanisms underlying solubility switching and contributes to the design of advanced resist materials for EUV lithography.

36 MATERIALS SCIENCE↗

DOE OSTI2025

Tuning the Magnetic Properties of CrI 3 Using Ni Thin Film Deposition for Applications in Spintronic Devices

Chromium triiodide (CrI 3 ), a van der Waals magnet, has recently been shown to host Ising ferromagnetism down to the monolayer limit. It is a potentially important material in 2D magnet-based applications, such as magnetic sensors and spintronic devices. Prior studies have revealed the coexistence of two different types of interlayer magnetic coupling, the antiferromagnetic (AFM) coupling near the surface and ferromagnetic (FM) coupling in the deep bulk layers, in pristine CrI 3 crystals below the Curie temperature. In this study, we used Ni thin film deposition to tune the surface magnetic states in bulk CrI 3 . A nanometer thickness (4 nm thick) of Ni was deposited on the surface of CrI 3 using electron-beam evaporation to form a Ni/CrI 3 heterostructure. The deposited Ni thin layer forms nanoclusters that completely cover the CrI 3 surface. Magnetic states of CrI 3 before and after Ni deposition are probed by ultralow-frequency magneto-Raman spectroscopy. Instead of seeing three spin wave branches in Raman scattering below 2 T, as in pristine bulk CrI 3 , in Ni/CrI 3 , we observe only a single spin wave branch, which is softened compared to that in pristine CrI 3 and displays a Zeeman shift under an out-of-plane magnetic field up to 7 T. This observation reveals that the AFM layers on pristine CrI 3 crystal surfaces transit into FM layers, so the entire CrI 3 crystal is in the FM state after Ni deposition. First-principles calculations show that Ni atoms tend to diffuse into the CrI 3 lattice, and the FM interlayer coupling has a much lower energy than AFM coupling in the presence of Ni atoms. As a result, our studies show that the magnetic state of CrI 3 can be modified through deposition of a thin metal layer on the surface, offering a route for controlling the spin degree of freedom in van der Waals magnets.

36 MATERIALS SCIENCE↗

DOE OSTI2025

Polaron Delocalization and Transport in Doped Graphene Nanoribbon Thin Films

Graphene nanoribbons (GNRs) are quantum-confined π-conjugated monolayer semiconductors with attractive properties for optoelectronic applications. However, the ground- and excited-state properties of charge carriers in GNRs are still poorly understood, particularly with regards to the coupling between charges and the GNR lattice and the degree to which this coupling impacts local and macroscopic charge transport. To address this issue, we systematically correlate carrier density-dependent charge transport with spectroscopic modulations in chemically doped thin films of armchair graphene nanoribbons (9-aGNRs). This study combines Fourier transform infrared (FTIR) and ultraviolet−visible−near-infrared (UV−vis−NIR) spectroscopy with both local and macroscopic conductivity measurements to arrive at a full and self-consistent picture of transport in doped GNR thin films. Using three different molecular p-type dopants (i.e., oxidants), we demonstrate that hole polarons are the dominant quasi-particle determining charge transport in GNRs and that the degree of polaron delocalization depends sensitively on the dopant and the hole density. For all three dopants, the local conductivity probed by microwave spectroscopy substantially exceeds the long-range conductivity obtained by four-point probe measurements. Interestingly, the dopant size substantially influences charge transport at high hole densities. We ascribe this effect to different propensities for forming bipolarons with lower mobilities than polarons. Comparison of GNR transport and spectral properties to other prototypical π-conjugated semiconductors (e.g., semiconducting polymers or carbon nanotubes) benchmark the charge transport properties of GNR thin films for optoelectronic devices and applications.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

DOE OSTI2025

Electrochemical Phase Engineering of γ′-V 2 O 5 Thin Films for Sodium-Ion Storage Electrodes

V 2 O 5 is a promising sodium-ion cathode material due to its high theoretical capacity (147 mAh/g) and working voltage (3.3 V vs Na/Na + ). Among its various crystal phases, γ′-V 2 O 5 has a large interlayer spacing, ensuring the reversible insertion–extraction of sodium ions. However, current synthesis methods for γ′-V2O5 require high temperatures (>600 °C) and toxic chemicals (NO 2 BF 4 ), which make the preparation demanding. Herein, we put forward an electrochemical phase engineering method combining thermal annealing and electrochemistry to easily prepare thin-film γ′-V 2 O 5 . Electrochemical characterization shows near-ideal performance as a thin-film cathode material for sodium-ion batteries. It shows a measured initial capacity of 152 mAh/g, a high working voltage (3.3 V vs Na + /Na), and an exceptional Coulombic efficiency of 98%, significantly surpassing previously reported values (∼50% CE). Cyclic voltammogram and galvanostatic capacity curves confirm the sodium insertion–deinsertion, which remains stable at 2 C. The γ′-V 2 O 5 thin film has electrochemical performance similar to γ′-V 2 O 5 powder, indicating another workable morphology of γ′-V 2 O 5 for sodium-ion batteries.

batteries↗

DOE OSTI2025

ZnGa 2 Te 4 thin-film absorbers for photoelectrochemical CO 2 reduction

Photoelectrochemical (PEC) carbon dioxide reduction reaction (CO 2 RR) has been considered as a promising route to convert and store solar energy into chemical fuels. It is crucial to find suitable photoelectrode materials that are photo-catalytically active and exhibit excellent photochemical stability. One of the promising contenders is ZnTe with the ∼2.26 eV band gap and prolonged stability under CO 2 RR PEC conditions. Herein, a new telluride based thin-film ZnGa 2 Te 4 photocathode with lower band gap and stronger visible light absorption compared to ZnTe is synthesized and characterized using a combinatorial sputtering technique. A two-step annealing method with excess Te supply is implemented to synthesize nearly stoichiometric ZnGa 2 Te 4 absorber material with a zincblende-derived tetragonal crystal structure confirmed by synchrotron X-ray and electron diffraction. Theoretical calculations show that ZnGa 2 Te 4 has suitable direct bandgap (∼1.86 eV) and high absorption coefficient ∼10 5 cm −1 , in agreement with experimentally prepared films. Transient absorption spectroscopy reveals the biexponential decay dynamics, with time constants, τ 1 ∼ 0.04, and τ 2 ∼ 0.65 μs in microsecond time scales and provides the optical transition pathways for this semiconductor thin film. PEC measurements show that the ZnGa 2 Te 4 photocurrent densities are comparable to the widely investigated ZnTe photocathodes or even surpass it under simulated sunlight condition. ZnGa 2 Te 4 samples demonstrate promising photoelectrochemical stability, maintaining consistent performance under illumination. The inclusion of diaryliodonium additive substantially increases its CO 2 RR selectivity to ∼60%. These findings open a new avenue for the synthesis of telluride-based thin-film photocathodes for further exploration and will motivate future research to integrate this potential photocathode material into PEC devices.

36 MATERIALS SCIENCE↗

DOE OSTI2026

Thin Film Synthesis of SrZn2P2 with SrI2 Post-Annealing for Enhanced Crystallinity and Optoelectronic Quality

Ternary Zintl phosphides are promising light-absorbing semiconductors for thin-film optoelectronic applications, but strategies for controlling their microstructure and optoelectronic quality remain underexplored. Here, we report the synthesis of phase-pure SrZn2P2 thin films using radio-frequency co-sputtering in a PH3 + Ar atmosphere and investigate the impact of post-growth processing on their structural and optical properties. Grazing-incidence X-ray scattering and Raman spectroscopy confirm the formation of crystalline SrZn2P2 films over a finite compositional window. Optical measurements reveal clear absorption near the direct-band-gap energy (~1.8 eV) and near-band-edge photoluminescence. Further, we have studied the effects of chemically compatible halide-assisted annealing. It is found that SrI2 treatments lead to pronounced grain growth and reduced diffraction peak broadening while preserving phase purity, in contrast to rapid thermal or forming-gas annealing. Notably, annealing with SrI2 at 450 degrees C significantly enhances both the intensity and spatial uniformity of the photoluminescence, thus connecting the observed microstructural consolidation with improved radiative recombination. Our study demonstrates that halide-assisted annealing provides an effective pathway for microstructural control in SrZn2P2 thin films and highlights a generalizable processing strategy for advancing Zintl phosphide semiconductors toward optoelectronic applications.

14 SOLAR ENERGY↗

DOE OSTI2024

Optical and microstructural studies of erbium-doped TiO 2 thin films on silicon, SrTiO 3 , and sapphire

Rare-earth ion doped oxide thin films integrated on silicon substrates provide a route toward scalable, chip-scale platforms for quantum coherent devices. Erbium-doped TiO 2 is an attractive candidate: the Er 3+ optical transition is compatible with C-band optical fiber communications, while TiO 2 is an insulating dielectric compatible with silicon process technology. Through structural and optical studies of Er-doped TiO 2 thin films grown via molecular beam deposition on silicon, SrTiO 3 , and sapphire substrates, we have explored the impact of polycrystallinity and microstructure on the optical properties of the Er emission. Comparing polycrystalline TiO 2 (rutile)/Si with single-crystalline TiO 2 (rutile)/r-sapphire and polycrystalline TiO 2 (anatase)/Si with single-crystalline TiO 2 (anatase)/SrTiO 3 , we observe that the inhomogeneous linewidth (Γ inh ) of the most prominent peak in the Er spectrum (the Y 1 –Z 1 transition, 1520 and 1533 nm in rutile and anatase TiO 2 ) is significantly narrower in the polycrystalline case. This implies a relative insensitivity to extended structural defects and grain boundaries in such films (as opposed to, e.g., point defects). We show that the growth of an undoped, underlying TiO 2 buffer on Si can reduce Γ inh by a factor of 4–5. Expectedly, Γ inh also reduces with decreasing Er concentrations: we observe a ∼2 order of magnitude reduction from ∼1000 ppm Er to ∼10 ppm Er. Γ inh then gets limited to a residual value of ∼5 GHz that is insensitive to further reduction in the Er concentration. Based upon the above results, we argue that the optical properties in these thin films are limited by the presence of high “grown-in” point defect concentrations.

Chemical elements↗

DOE OSTI2025

Niobium hydride formation in superconducting qubit thin films

The formation of nonsuperconducting hydrides in 160–170-nm-thick films of niobium is examined. We identify six elastically distinct orientation relationships ɛ−Nb 4 ⁢H 3 takes within the matrix, solid-solution 𝛼−NbH 𝑥 phase. We employ a phase field model to assess the impact of elastic energy induced by the strain of phase transformation on the morphology and transformation dynamics of ɛ precipitates within a thin film. We consider the dimensions of the thin film, crystallographic growth direction, and diffusion rates to predict the timescale of hydride evolution. Leveraging the finite element method, we predict two-dimensional and three-dimensional equilibrium shapes of ɛ-hydrides within a bulk sample and in a thin film that has a traction-free surface. Our results suggest that niobium hydrides migrate to the free surface of the film. Precipitates which reach the free surface coarsen, while precipitates within the film dissolve. Precipitates in both two dimensions and three dimensions experience a repulsive interaction force at the free surface, that is attractive in the bulk, shown in experiment and theory of previous studies.

36 - MATERIALS SCIENCE↗

DOE OSTI2024

Strain phase equilibria and phase‐field method of ferroelectric polydomain: A case study of monoclinic K x Na 1 − x NbO 3 thin films

Abstract Knowledge of the thermodynamic equilibria and domain structures of ferroelectrics is critical to establishing their structure–property relationships that underpin their applications from piezoelectric devices to nonlinear optics. Here, we establish the strain condition for strain phase separation and polydomain formation and analytically predict the corresponding domain volume fractions and wall orientations of, relatively low symmetry and theoretically more challenging, monoclinic ferroelectric thin films by integrating thermodynamics of ferroelectrics, strain phase equilibria theory, microelasticity, and phase‐field method. Using monoclinic K x Na 1 − x NbO 3 (0.5 < x < 1.0) thin films as a model system, we establish the polydomain strain–strain phase diagrams, from which we identify two types of monoclinic polydomain structures. The analytically predicted strain conditions of formation, domain volume fractions, and domain wall orientations for the two polydomain structures are consistent with phase‐field simulations and in good agreement with experimental results in the literature. The present study demonstrates a general, powerful analytical theoretical framework to predict the strain phase equilibria and domain wall orientations of polydomain structures applicable to both high‐ and low‐symmetry ferroelectrics and provide fundamental insights into the equilibrium domain structures of ferroelectric K x Na 1 − x NbO 3 thin films that are of technology relevance for lead‐free dielectric and piezoelectric applications.

36 MATERIALS SCIENCE↗