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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
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Photochemical etching is most successful method for obtaining simulated microwave backscatter pattern from ocean surface. Process is adaptable to integrated circuit and thin film semiconductor fabrications. The attained horizontal resolution of 10 should improve with equipment refinement.
The design definition of a microwave power reception and conversion system for use on high altitude powered platform is presented. The study includes an initial design, construction and test effort on a thin film, printed circuit rectenna. A study of a low altitude demonstration of an airborne rectenna was made starting with the assumption that a fifty foot mechanically steerable parabolic reflector at the Wallops Flight Center would be retrofitted with a low microwave power source consisting of a five kilowatt commercially available magnetron and that a small blimp would be used to support the rectenna.
A Cesium frequency standard that was developed for satellite applications is discussed. It weighs 23 lbs. and uses 23.5 watts of power, achieves a stability of 1 x ten to the minus 13th power/100,000 seconds, and is radiation hardened. To achieve the weight and reliability requirements, both thick and thin film hybrid circuits were utilized. A crystal oscillator is used to improve short-term stability and performance on a moving platform.
An integrating IR detector array for imaging is provided in a hybrid circuit with InSb mesa diodes in a linear array, a single J-FET preamplifier for readout, and a silicon integrated circuit multiplexer. Thin film conductors in a fan out pattern deposited on an Al2O3 substrate connect the diodes to the multiplexer, and thick film conductors also connect the reset switch and preamplifier to the multiplexer. Two phase clock pulses are applied with a logic return signal to the multiplexer through triax comprised of three thin film conductors deposited between layers. A lens focuses a scanned image onto the diode array for horizontal read out while a scanning mirror provides vertical scan.
Attention is given to recent advances in the technologies needed to build and transport a Solar Power satellite. Among the areas of NASA sponsored SPS research are: the application of ground-based, electronically steerable arrays to the SPS space-based microwave transmitting antenna; and the application of microwave transmission technology to a low-cost LEO-to-GEO transportation system to build the SPS. A photograph of a thin-film etched circuit rectenna for powering the LEO-to-GEO transportation system is provided.
Brief discussions of the techniques used to make dielectric and metal thin film depositions for monolithic circuits are presented. Silicon nitride deposition and the properties of silicon nitride films are discussed. Deposition of dichlorosilane and thermally grown silicon dioxide are reported. The deposition and thermal densification of borosilicate, aluminosilicate, and phosphosilicate glasses are discussed. Metallization for monolithic circuits and the characteristics of thin films are also included.
The program had two general objectives. The first objective was to develop the two plane rectenna format for space application at 2.45 GHz. The resultant foreplane was a thin-film, etched-circuit format fabricated from a laminate composed of 2 mil Kapton F sandwiched between sheets of 1 oz copper. The thin-film foreplane contains half wave dipoles, filter circuits, rectifying Schottky diode, and dc bussing lead. It weighs 160 grams per square meter. Efficiency and dc power output density were measured at 85% and 1 kw/sq m, respectively. Special testing techniques to measure temperature of circuit and diode without perturbing microwave operation using the fluoroptic thermometer were developed. A second objective was to investigate rectenna technology for use at 20 GHz and higher frequencies. Several fabrication formats including the thin-film scaled from 2.45 GHz, ceramic substrate and silk-screening, and monolithic were investigated, with the conclusion that the monolithic approach was the best. A preliminary design of the monolithic rectenna structure and the integrated Schottky diode were made.
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Abstract The quantum noise of light, attributed to the random arrival time of photons from a coherent light source, fundamentally limits optical phase sensors. An engineered source of squeezed states suppresses this noise and allows phase detection sensitivity beyond the quantum noise limit (QNL). We need ways to use quantum light within deployable quantum sensors. Here we present a photonic integrated circuit in thin-film lithium niobate that meets these requirements. We use the second-order nonlinearity to produce a squeezed state at the same frequency as the pump light and realize circuit control and sensing with electro-optics. Using 26.2 milliwatts of optical power, we measure (2.7 ± 0.2)% squeezing and apply it to increase the signal-to-noise ratio of phase measurement. We anticipate that photonic systems like this, which operate with low power and integrate all of the needed functionality on a single die, will open new opportunities for quantum optical sensing.
A simple, inexpensive circuit is described for switching the current through a resistively heated evaporation boat during thin-film deposition. The circuit uses a silicon-controlled rectifier (SCR) to switch the 0-15-A current in the primary of a 2-kV A step-down transformer that supplies the 0-200-A current to an evaporation boat. The circuit is controlled by a 0-10 V-dc signal similar to that furnished by an Inficon XTC deposition-rate controller. This circuit may be assembled from a handful of parts for a cost of about $400, nearly one-tenth the cost of similar commercial units. Minimum construction is required, since the circuit is built around an off-the-shelf, self-contained SCR unit.
A major goal of the semiconductor indurstry is to lower the processing temperatures needed for interconnects in silicon integrated circuits. Typical rapid thermal annealing processes heat the film as well as the substrate, creating device problems.
Silicon photonics is a platform that enables densely integrated photonic components and systems and integration with electronic circuits. Depletion mode modulators designed on this platform suffer from a fundamental frequency response limit due to the mobility of carriers in silicon. Lithium niobate-based modulators have demonstrated high performance, but the material is difficult to process and cannot be easily integrated with other photonic components and electronics. In this manuscript, we simultaneously take advantage of the benefits of silicon photonics and the Pockels effect in lithium niobate by heterogeneously integrating silicon photonic-integrated circuits with thin-film lithium niobate samples. We demonstrate the most CMOS-compatible thin-film lithium niobate modulator to date, which has electro-optic 3 dB bandwidths of 30.6 GHz and half-wave voltages of 6.7 V×cm. These modulators are fabricated entirely in CMOS facilities, with the exception of the bonding of a thin-film lithium niobate sample post fabrication, and require no etching of lithium niobate.
Integrated circuits, diffusion in thin films, and biophysical hazards of lasers
Solid state voltage controlled oscillator using two silicon integrated circuit chips and thin film resistor chip
The package design and assembly techniques for the IMP-F and IMP-G space-physics experiments, provided for the NASA Interplanetary Monitoring Platform Program are described. Thin-film, hybrid, integrated circuits used in these instruments to increase component density and reliability, and special procedures and precautions for the fabrication of space hardware are described.
Monitor was designed for use on dual air density satellite, utilizing standard integrated circuit components, thin-film resistors network, plus several passive components. Device measures unit charge and holds data for transmission at later time.
We have developed a low-noise 850 GHz superconductor-insulator-superconductor (SIS) quasi-particle mixer with NbTiN thin-film microstrip tuning circuits and hybrid Nb/AlN/NbTiN tunnel junctions. The mixer uses a quasioptical configuration with a planar twin-slot antenna feeding a two-junction tuning circuit. At 798 GHz, we measured an uncorrected double-sideband receiver noise temperature of T(sub RX) = 260 K at 4.2 K bath temperature. This mixer outperforms current Nb SIS mixers by a factor of nearly 2 near 800 GHz. The high gap frequency and low loss at 800 GHz make NbTiN an attractive material with which to fabricate tuning circuits for SIS mixers. NbTiN mixers can potentially operate up to the gap frequency, 2(delta)/h is approximately 1.2THz.
There is an emerging need for semiconductors that can be processed at near ambient temperature with high mobility and device performance. Although multiple n-type options have been identified, the development of their p-type counterparts remains limited. In this paper, we report the realization of tellurium thin films through thermal evaporation at cryogenic temperatures for fabrication of high-performance wafer-scale p-type field-effect transistors. We achieve an effective hole mobility of ~35 cm 2 V –1 s –1 , on/off current ratio of ~10 4 and subthreshold swing of 108 mV dec –1 on an 8-nm-thick film. High-performance tellurium p-type field-effect transistors are fabricated on a wide range of substrates including glass and plastic, further demonstrating the broad applicability of this material. Significantly, three-dimensional circuits are demonstrated by integrating multi-layered transistors on a single chip using sequential lithography, deposition and lift-off processes. Finally, various functional logic gates and circuits are demonstrated.