SEARCH · Search NASA
Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.
Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.
Discussion of the operating characteristics of a three-terminal thin-film SNS Josephson junction whose diameter is much greater than the electron pair coherence length in the N metal. It is shown that a junction of this type is essentially a two-terminal device even though the third terminal of the junction supplies the control current. The mechanism underlying this finding is discussed.
Circuit incorporates three-terminal current limiter (78M24) to increase overall reliability and to eliminate transistor burnouts resulting from shorted interconnection lines and other overloads. Fact-acting light emitting diodes across the limiters show status of transistor output circuits.
High-efficiency, monolithic, two-color, three-terminal solar cells were fabricated by a novel growth technique, vacuum metal-organic chemical vapor deposition. The technique uses the expensive metal alkyls efficiently and toxic gases sparingly. The fact that the outer chamber is constructed of nonbreakable stainless steel is an attractive safety feature associated with this deposition system.
The modeled cascade cells offer an alternative to conventional series cascade designs that require a monolithic intercell ohmic contact. Selective electrodes provide a simple means of fabricating three-terminal devices, which can be configured in complementary pairs to circumvent the attendant losses and fabrication complexities of intercell ohmic contacts. Moreover, selective electrodes allow incorporation of additional layers in the upper subcell which can improve spectral response and increase radiation tolerance. Realistic simulations of such cells operating under one-sun AMO conditions show that the seven-layer structure is optimum from the standpoint of beginning-of-life efficiency and radiation tolerance. Projected efficiencies exceed 26 percent. Under higher concentration factors, it should be possible to achieve efficiencies beyond 30 percent. However, to simulate operation at high concentration will require a model for resistive losses. Overall, these devices appear to be a promising contender for future space applications.
An alternative class of photovoltaics was presented, which is designed to overcome two problem areas with conventional cascade designs: poor upper subcell performance and lossy intercell ohmic contact (IOC). It was shown that upper subcell quality can be improved by incorporating additional junctions into the upper subcell and that the problems with monolithic IOCs may be circumvented by using complementary pairs of three-terminal cells or a 1 x 2 voltage-matched configuration. Realistic simulations show that AlGaAs-GaAs and AlGaAs-InGaAs multijunction, multiband-gap solar cells (MJSC) may achieve benginning-of-life (BOL) one-sun, AMO efficiencies of 26 and 28 percent, respectively. Complementary cells made in the AlGaAs-InGaAs system can achieve BOL one-sun AMO efficiencies in excess of 27 percent. Seven-layer MJSCs are most advantageous for space applications due to their superior tolerance to radiation degradation.
The authors propose a novel class of cascade photovoltaics which are intended to overcome two problems with current cascade solar cell designs: poor upper subcell performance and excessive joule losses in the intercell ohmic contact (IOC). The devices feature multijunction upper subcells which improve spectral response by reducing the mean collection distance for photogenerated carriers. They circumvent the need for a monolithic IOC by using npn and pnp three-terminal cells arranged in a complementary configuration. Emphasis is on the AlGaAs-InGaAs system, which allows optimal partitioning of the solar spectrum to attain maximum possible efficiency for a two-gap cascade design. Computer simulations of these cells show that one-sun beginning-of-life efficiencies in excess of 27 percent are possible.
Resonant-tunneling devices in microelectronic component form, whose structure is the electron analog of a Fabry-Perot resonator, encompass oscillators, self-oscillating mixers, and harmonic multipliers. The negative differential resistance characteristic of these devices has been obtained at room temperature, and resonant-tunneling transistors capable of operation in the THz-frequency range appear to be feasible. Three-terminal resonant-tunneling device development is in its infancy, as is that of devices for digital applications.
A W-band (75-100 GHz) six-port junction network analyzer was constructed from commercially available descrete waveguide components and was used for the direct two-port S-parameter measurement of active three-terminal devices. A comparison between the six-port and a down-converter-type frequency extender for a conventional network analyzer revealed the superior performance of the six-port. The application of the six-port to characterize a 0.1-micron gate-length HEMT at W-band is described, and representative results are presented.
In this strategy of depositing the basic building blocks of superconductors, semiconductors, and dielectric having common elements, researchers deposited superconducting films of Y-Ba-Cu-O, semiconductor films of Cu2O, and dielectric films of BaF2 and Y2O3 by metal oxide chemical vapor deposition (MOCVD). By switching source materials entering the chamber, and by using direct writting capability, complex device structures like three-terminal hybrid semiconductors/superconductors transistors can be fabricated. The Y-Ba-Cu-O superconducting thin films on BaF2/YSZ substrates show a T(sub c) of 80 K and are textured with most of the grains having their c-axis or a-axis perpendicular to the substrate. Electrical characteristics as well as structural characteristics of superconductors and related materials obtained by x-ray defraction, electron microscopy, and energy dispersive x-ray analysis are discussed.
The fabrication and performance of WO3-based, solid-state, three-terminal device configurations as programmable analog memory elements are reported. These transistorlike device structures exhibit good resistance progammability with a remarkable resolution of a few percent of the resistive strength over a four orders of magnitude dynamic range. The most critical component of these devices is an insulating layer between the active WO3 and the cation donor layer. The progamming characteristics and operation mechanisms of the device are described, and probable reaction mechanisms critical to the device stability are discussed.
Three-terminal, double-stacked-gate field-effect transistor (FET), developed as analog memory element. Particularly suited for use as synapse with variable connection strength in electronic neural network. Provides programmable, nonvolatile resistive connection, somewhat in manner of porous-gate FET described in "Porous-Floating-Gate Field-Effect Transistor" (NPO-17532). Resembles commercial erasable programmable read-only memory (EPROM) device, except for thickness of layers of silicon dioxide electrically isolating gates. Either p-channel or n-channel device.
Improved capacitive sensor used to detect presence and/or measure thickness of layer of liquid. Electrical impedance or admittance of sensor measured at prescribed frequency, and thickness of liquid inferred from predetermined theoretical or experimental relationship between impedance and thickness. Sensor is basically a three-terminal device. Features interdigitated driving and sensing electrodes and peripheral coplanar ground electrode that reduces parasitic effects. Patent-pending because first to utilize ground plane as "shunting" electrode. System less expensive than infrared, microwave, or refractive-index systems. Sensor successfully evaluated in commercial production plants to characterize emulsions, slurries, and solutions.
The fully guarded three-terminal technique was used to perform conductivity measurements on single-crystal alumina at temperatures of 400-1300 C. The conductivity was also determined as a function of time at various temperatures and applied fields. Further, the fractions of the current carried by Al and O ions (ionic transference numbers) were determined from long-term transference experiments in the temperature range 1100-1300 C. A mathematical model of the conduction mechanism is proposed, and model predictions are compared with experimental results.
Using measured device parameters from a monolithic three-terminal In/GaInAs (0.75 eV) tandem concentrator solar cell, a numerical model is constructed that calculates efficiency as a function of temperature and concentration ratio. The device measurements indicate that the series resistance in the InP top cell severely limits the maximum efficiency at high concentration ratios. Results from the model in which a single-junction InP concentrator solar cell that has a lower resistance by a factor of six was substituted for the top cell show that peak 20 C air-mass-zero (AM0) efficiencies should approach 30 percent at concentration ratios greater than 100. At 80 C, this tandem cell should exceed 24 percent AM0 efficiency.
The present volume on IR readout electronics discusses cryogenic readout using silicon devices, cryogenic readout using III-V and LTS devices, multiplexers for higher temperatures, and focal-plane signal processing electronics. Attention is given to the optimization of cryogenic CMOS processes for sub-10-K applications, cryogenic measurements of aerojet GaAs n-JFETs, inP-based heterostructure device technology for ultracold readout applications, and a three-terminal semiconductor-superconductor transimpedance amplifier. Topics addressed include unfulfilled needs in IR astronomy focal-plane readout electronics, IR readout integrated circuit technology for tactical missile systems, and radiation-hardened 10-bit A/D for FPA signal processing. Also discussed are the implementation of a noise reduction circuit for spaceflight IR spectrometers, a real-time processor for staring receivers, and a fiber-optic link design for INMOS transputers.
We report on the design and measurement of monolithic 155- and 213-GHz quasi-optical oscillators using AlInAs/GaInAs/InP HEMTs (high-electron mobility transistors). These results are believed to be the highest frequency three-terminal oscillators reported to date. The indium concentration in the channel was 80% for high sheet charge and mobility. The HEMT gates were fabricated with self-aligned sub-tenth-micrometer electron-beam techniques to achieve gate lengths on the order of 50 nm and drain-source spacing of 0.25 micron. Planar antennas were integrated into the fabrication process resulting in a compact and efficient quasi-optical Monolithic Millimeter-wave Integrated Circuit (MMIC) oscillator.
Multi-terminal carbon-nanotube junctions are under investigation as candidate components of nanoscale electronic devices and circuits. Three-terminal "Y" junctions of carbon nanotubes (see Figure 1) have proven to be especially interesting because (1) it is now possible to synthesize them in high yield in a controlled manner and (2) results of preliminary experimental and theoretical studies suggest that such junctions could exhibit switching and rectification properties. Following the preliminary studies, current-versus-voltage characteristics of a number of different "Y" junctions of single-wall carbon nanotubes connected to metal wires were computed. Both semiconducting and metallic nanotubes of various chiralities were considered. Most of the junctions considered were symmetric. These computations involved modeling of the quantum electrical conductivity of the carbon nanotubes and junctions, taking account of such complicating factors as the topological defects (pentagons, heptagons, and octagons) present in the hexagonal molecular structures at the junctions, and the effects of the nanotube/wire interfaces. A major component of the computational approach was the use of an efficient Green s function embedding scheme. The results of these computations showed that symmetric junctions could be expected to support both rectification and switching. The results also showed that rectification and switching properties of a junction could be expected to depend strongly on its symmetry and, to a lesser degree, on the chirality of the nanotubes. In particular, it was found that a zigzag nanotube branching at a symmetric "Y" junction could exhibit either perfect rectification or partial rectification (asymmetric current-versus-voltage characteristic, as in the example of Figure 2). It was also found that an asymmetric "Y" junction would not exhibit rectification.
Precise location of faults for large distance power transmission networks is essential for faster repair and restoration process. High Voltage direct current (HVdc) networks using modular multi-level converter (MMC) technology has found its prominence for interconnected multi-terminal networks. This allows for large distance bulk power transmission at lower costs. However, they cope with the challenge of dc faults. Fast and efficient methods to isolate the network under dc faults have been widely studied and investigated. After successful isolation, it is essential to precisely locate the fault. The post-fault voltage and current signatures are a function of multiple factors and thus accurately locating faults on a multi-terminal network is challenging. In this paper, we discuss a novel data-driven ensemble learning based approach for accurate fault location. Here we utilize the eXtreme Gradient Boosting (XGB) method for accurate fault location. The sensitivity of the proposed algorithm to measurement noise, fault location, resistance and current limiting inductance are performed on a radial three-terminal MTdc network designed in Power System Computer Aided Design (PSCAD)/Electromagnetic Transients including dc (EMTdc).