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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 55 records · Page 3

Siple station experiments on wave-particle interactions in the magnetosphere

Natural and controlled whistler-mode signals have been used to study nonlinear mechanisms of wave growth and wave-wave interactions (WWI) in the magnetosphere; three general classes of WWI (triggering, suppression, and entrainment) are identified and interpreted in terms of a model based on cyclotron resonance interaction. This model is also used to estimate the wave field intensity associated with different types of WWI. A new type of triggered emission, the band-limited impulse (BLI) is interpreted in terms of the switching of phase-bunched currents. In addition, an experiment to find a threshold for the excitation of the coherent wave instability is discussed, and observed VLF wave-induced transient bursts of X-rays, light and E-region ionization enhancements are considered with regard to a step function wave interacting with all resonant electrons in a given energy range.

Helliwell, R. A.↗

B-ISBN Onboard Processing Fast Packet Switch Developed

Future satellite communications applications will require a packet-switched onboard satellite processing system to route packets at very high speeds from uplink beams to different downlink beams. The rapid emergence of point-to-multipoint services, and the important role of satellites in a national and global information infrastructure, makes the multicast function essential to a fast packet switch (FPS). NASA Lewis Research Center's Digital System Technology Branch has been studying possible architectures for high-speed onboard-processing satellite systems. As part of this research, COMSAT Laboratories developed a broadband integrated services digital network (B-ISDN) fast packet switch for Lewis that was delivered on December 1994. The fast packet switch consists of eight inputs and eight outputs that can receive and transmit data, respectively, at a rate of 155 Mbps. The switch features multiple priorities (three) and multiple-size (three) satellite virtual cells that are similar to ATM cells in length (52 bytes). In addition, the fast packet switch features a congestion-control algorithm that allows users to set different thresholds for individual destination ports, thus throttling back the traffic from the transmitting port.

Source record↗

Transverse Mode Dynamics of VCSELs Undergoing Current Modulation

Transverse mode dynamics of a 20-micron-diameter vertical-cavity surface-emitting laser (VCSEL) undergoing gain switching by deep current modulation is studied numerically. The direct current (dc) level is set slightly below threshold and is modulated by a large alternating current (ac). The resulting optical pulse train and transverse-mode patterns are obtained numerically. The ac frequency is varied from 2.5 GHz to 10 GHz, and the ac amplitude is varied from one-half to four times that of the dc level. At high modulation frequencies, a regular pulse train is not generated unless the ac amplitude is large enough. At all modulation frequencies, the transverse spatial profile switches from single-mode to multiple-mode pattern as the ac pumping level is increased. Optical pulse widths vary in the range 5-30 ps. with the pulse width decreasing when either the frequency is increased or the ac amplitude is decreased. The numerical modeling uses an approximation form of the semiconductor Maxwell-Bloch equations. Temporal evolution of the spatial profiles of the laser (and of carrier density) is determined without any assumptions about the type or number of modes. Keywords: VCSELs, current modulation, gain switching, transverse mode dynamics, computational modeling

Goorjian, Peter M.↗

Environmental testing of a Q-switched Nd:YLF laser and a Nd:YAG ring laser

A Q-switched Nd:YLF laser (model 110-02) and a Nd:YAG ring laser (model 120-04) from Lightwave Electronics were subjected to thermal and vibration tests similar to what can be expected during launch and flight on a spacecraft. Even though these lasers were not designed for space flight, environmental tests were performed to identify major design weaknesses. Laser performance (output power, energy, pulsewidth, lasing threshold etc.) were measured prior to and after thermal vibration tests. Average output power of the Q-switched laser degraded 15-20 percent after thermal tests and an additional 20-25 percent after vibration tests. Post diagnostic tests revealed that degradation of the Q-switched laser was due to misalignment of pump focusing optics and the laser cavity.

Robinson, D. L.↗

Design of CMOS logic gates for TID radiation

The rise time, fall time and propagation delay of the logic gates were derived. The effects of total ionizing dose (TID) radiation on the fall and rise times of CMOS logic gates were obtained using C program calculations and PSPICE simulations. The variations of mobility and threshold voltage on MOSFET transistors when subjected to TID radiation were used to determine the dependence of switching times on TID. The results of this work indicate that by increasing the size of P-channel transistor with respect to the N-channel transistors of the CMOS gates, the propagation delay of CMOS logic gate can be made to decrease with, or be independent of an increase in TID radiation.

Attia, John Okyere↗

Measuring Input Thresholds on an Existing Board

A critical PECL (positive emitter-coupled logic) interface to Xilinx interface needed to be changed on an existing flight board. The new Xilinx input interface used a CMOS (complementary metal-oxide semiconductor) type of input, and the driver could meet its thresholds typically, but not in worst-case, according to the data sheet. The previous interface had been based on comparison with an external reference, but the CMOS input is based on comparison with an internal divider from the power supply. A way to measure what the exact input threshold was for this device for 64 inputs on a flight board was needed. The measurement technique allowed an accurate measurement of the voltage required to switch a Xilinx input from high to low for each of the 64 lines, while only probing two of them. Directly driving an external voltage was considered too risky, and tests done on any other unit could not be used to qualify the flight board. The two lines directly probed gave an absolute voltage threshold calibration, while data collected on the remaining 62 lines without probing gave relative measurements that could be used to identify any outliers. The PECL interface was forced to a long-period square wave by driving a saturated square wave into the ADC (analog to digital converter). The active pull-down circuit was turned off, causing each line to rise rapidly and fall slowly according to the input s weak pull-down circuitry. The fall time shows up as a change in the pulse width of the signal ready by the Xilinx. This change in pulse width is a function of capacitance, pulldown current, and input threshold. Capacitance was known from the different trace lengths, plus a gate input capacitance, which is the same for all inputs. The pull-down current is the same for all inputs including the two that are probed directly. The data was combined, and the Excel solver tool was used to find input thresholds for the 62 lines. This was repeated over different supply voltages and temperatures to show that the interface had voltage margin under all worst case conditions. Gate input thresholds are normally measured at the manufacturer when the device is on a chip tester. A key function of this machine was duplicated on an existing flight board with no modifications to the nets to be tested, with the exception of changes in the FPGA program.

Kuperman, Igor↗

Solid-state lasers for the mid-infrared region

Developmental results for solid-state lasers for the mid-IR region are reviewed. Good slope efficiency and reasonable thresholds have been demonstrated for multiply doped mid-IR lasers. Laser efficiency increases as the operating temperature is decreased, due to both reduced threshold and a higher slope efficiency. Good slope efficiencies have been achieved even at room temperature. While Q-switching has been demonstrated at room temperature, it is not nearly as efficient as it is at reduced temperatures.

Barnes, Norman P.↗

Gigarad-tolerant power switches and memory elements

A new class of silicon devices operating without p-n junctions has been studied for radiation hardness. The electric field in these devices is uniform over most of the device, thus causing high-voltage breakdown to increase with electrode spacing. Deep acceptor levels are created in the silicon by diffusing gold atoms into the lattice, or by electron radiation. These acceptor levels, near the center of the band gap, trap out electrons so that the low resistivity of the n-type doped wafer can be raised to intrinsic resistivity. Switching between a high-resistivity state at low currents and a low-resistivity state at high currents occurs at a definite threshold voltage, exhibiting characteristics similar to silicon-controlled rectifiers. Compensating 0.1 ohm-meter (10 ohm-cm) silicon wafers requires electron fluxes of 10 to the 23rd electrons per square meter (10 to the 19th electrons per square centimeter). Experiments demonstrating gamma tolerance to 1 Gigarad(Si) are described. Calculations for maximum tolerable neutron fluence are shown, and a phenomenological explanation for these results is presented.

Joyner, W. T.↗

Study of nonlinear optical sBs phenomena in mid IR fibers

This is the first reported attempt at investigation of the sBs phenomena in mid IR fibers using externally fed or laser self generated low frequency and microwave frequency phonon waves as diagnostic probes of such processes. The observation of laser excited phonon emissions in the mid IR fiber and direct modulation of CO2 laser pulse transmission by externally imposed low frequency radiation is the first indication of the predicted low sBs threshold in these fibers in the phonon rich mid IR spectral region. The prospect of wide applications of the sBs process in optical switching, phase conjugation and ultimately optical computing and possible deleterious effects in mid IR laser heterodyne spectroscopy, sideband modulation and transmitted power limitation is discussed.

Yu, Chung↗

Evaluation of Magnetoresistive RAM for Space Applications

Magnetoresistive random-access memory (MRAM) is a non-volatile memory that exploits electronic spin, rather than charge, to store data. Instead of moving charge on and off a floating gate to alter the threshold voltage of a CMOS transistor (creating different bit states), MRAM uses magnetic fields to flip the polarization of a ferromagnetic material thus switching its resistance and bit state. These polarized states are immune to radiation-induced upset, thus making MRAM very attractive for space application. These magnetic memory elements also have infinite data retention and erase/program endurance. Presented here are results of reliability testing of two space-qualified MRAM products from Aeroflex and Honeywell.

Heidecker, Jason↗

Computer analysis of the negative differential resistance switching phenomenon of double-injection devices

By directly solving the semiconductor differential equations for the double-injection (DI) devices involving two interacting deep levels, the authors studied the negative differential resistance switching characteristic and its relationship with the device dimension, doping level, and dependence on the deep impurity profile. Computer simulation showed that although one can increase the threshold voltage by increasing the device length, the excessive holding voltage that would follow would put this device in a very limited application such as pulse power source. The excessive leakage current in the low conductance state also jeopardizes the attempt to use the device for any practical purpose. Unless there are new materials and deep impurities found that have a great differential hole and electron capture cross sections and a reasonable energy bandgap for low intrinsic carrier concentration, no big improvement in the fate of DI devices is expected in the near future.

Shieh, Tsay-Jiu↗

Electro-Optical Resonant Phase Modulator

Electro-optical phase modulator includes electro-optical crystal in resonant cavity suitable for use in transmitting digital data on laser beam at data rate of 10 MHz. Switching voltages applied to crystal, thereby switching cavity onto and off resonance, and large phase dispersion occurring near resonance provides output phase modulation. Driving voltages smaller than those of nonresonant modulators. Laser-damage thresholds of apparatus, incorporating bulk optics, inherently greater than modulators based on integrated optics.

Chen, Chien-Chung↗

Land Surfaces at the Tipping-Point for Water and Energy Balance Coupling

The surface water and energy balances can be coupled or uncoupled depending on whether the evaporation regime is water-limited or energy-limited. As the landscape loses soil moisture during drydowns, a transition between the regimes may occur, which signifies a nonlinear change in water-energy-carbon coupling. Regions that switch often between these two regimes, that is, are dominated by neither regime, are particularly vulnerable to climate variability and change. To robustly identify these tipping points, we identify drydown events based on global soil moisture data sets from remote sensing. The event identification does not rely on precipitation information and is robust with respect to measurement noise. Then, the soil moisture thresholds delineating the evaporation regime transitions are determined by Sequential Monte Carlo Sampling and a two-stage parametrization strategy. Based on the estimated soil moisture thresholds across the globe, we estimate observation-based water availability indices which quantify the nonlinear controls of soil moisture on evaporation. This framework is tested and applied globally using Soil Moisture Active Passive soil moisture retrievals. Combined with a new tippling-point metric that describes the frequency of evaporation regime transitions, we identify regions that switch often between different evaporation regimes at the global scale. Given unit shifts in soil moisture, these regions will experience the most change in how their surface water and energy are coupled.

Jianzhi Dong↗

GaAs-based optoelectronic neurons

An integrated, optoelectronic, variable thresholding neuron implemented monolithically in GaAs integrated circuit and exhibiting high differential optical gain and low power consumption is presented. Two alternative embodiments each comprise an LED monolithically integrated with a detector and two transistors. One of the transistors is responsive to a bias voltage applied to its gate for varying the threshold of the neuron. One embodiment is implemented as an LED monolithically integrated with a double heterojunction bipolar phototransistor (detector) and two metal semiconductor field effect transistors (MESFET's) on a single GaAs substrate and another embodiment is implemented as an LED monolithically integrated with three MESFET's (one of which is an optical FET detector) on a single GaAs substrate. The first noted embodiment exhibits a differential optical gain of 6 and an optical switching energy of 10 pJ. The second embodiment has a differential optical gain of 80 and an optical switching energy of 38 pJ. Power consumption is 2.4 and 1.8 mW, respectively. Input 'light' power needed to turn on the LED is 2 micro-W and 54 nW, respectively. In both embodiments the detector is in series with a biasing MESFET and saturates the other MESFET upon detecting light above a threshold level. The saturated MESFET turns on the LED. Voltage applied to the biasing MESFET gate controls the threshold.

Lin, Steven H.↗

Nonlinear optical properties of composite materials

The optical properties of a new class of composite nonlinear materials composed of coated grains, such as cadmium sulfide with a silver coating, are examined. These materials exhibit intrinsic optical bistability and resonantly enhanced conjugate reflectivity. The threshold for intrinsic optical bistability is low enough for practical applications in optical communications and optical computing. Some problems associated with the fabrication of these materials are addressed. Based on preliminary results, switching times are expected to be in the subpicosecond range.

Haus, Joseph W.↗

2.07-micron CW diode-laser-pumped Tm,Ho:YLiF4 room-temperature

Continuous-wave action is obtained at 2.07 microns from a 2-mm-long Tm-sensitized Ho:YLiF4 crystal at room temperature when longitudinally pumped by a pair of diode-laser arrays. Laser output power at 300 K is 26 mW, with a 30-percent slope efficiency and a lasing threshold of 108 mW. A maximum output power of 187 mW is obtained from a 4-mm-long crystal at 77 K, with a 67 percent slope efficiency. A preliminary demonstration of cavity Q switching produced 165 microJ of pulse energy at a repetition rate of 100 Hz.

Hemmati, Hamid↗