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Results for “topological crystalline insulator”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
DOE OSTI2023

Thermally driven phase transitions in freestanding low-buckled silicene, germanene, and stanene

Low-buckled silicene, germanene, and stanene are group-IV graphene allotropes. They form a honeycomb lattice out of two interpenetrating (A and B) triangular sublattices that are vertically separated by a small distance Δ z . The atomic numbers Z of silicon, germanium, and tin are larger than that of carbon (Z C = 6), making them the first experimentally viable two-dimensional topological insulators. Those materials have a twice-energy-degenerate atomistic structure characterized by the buckling direction of the B sublattice with respect to the A sublattice [whereby the B atom either protrudes above (Δ z > 0) or below (Δ z < 0) the A atoms], and the consequences of that energy degeneracy on their elastic and electronic properties have not been reported thus far. Here, we uncover ferroelastic, bistable behavior on silicene, which turns into an average planar structure at about 600 K. Furthermore, the creation of electron and hole puddles obfuscates the zero-temperature spin-orbit coupling (SOC)-induced band gaps at temperatures as low as 200 K, which may discard silicene as a viable two-dimensional topological insulator for room-temperature applications. Germanene, on the other hand, never undergoes a low-buckled-to-planar two-dimensional transformation, becoming amorphous at around 675 K instead, and preserving its SOC-induced band gap despite band broadening. Stanene undergoes a transition onto a crystalline three-dimensional structure at about 300 K, preserving its SOC-induced electronic band gap up to that temperature. Unlike what is observed in silicene and germanene, stanene readily develops a higher-coordinated structure with a high degree of structural order. Furthermore, the structural phenomena are shown to have far-reaching consequences for the electronic and vibrational properties of those two-dimensional topological insulators.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Optimization of the Growth of the Van der Waals Materials Bi 2 Se 3 and (Bi 0.5 In 0.5 ) 2 Se 3 by Molecular Beam Epitaxy

The naturally existing chalcogenide Bi 2 Se 3 is topologically nontrivial due to the band inversion caused by the strong spin-orbit coupling inside the bulk of the material. Here, the surface states are spin polarized, protected by the time-inversion symmetry, and thus robust to the scattering caused by nonmagnetic defects. A high-purity topological insulator thin film can be easily grown via molecular beam epitaxy (MBE) on various substrates to enable novel electronics, optics, and spintronics applications. However, the unique surface state properties have historically been limited by the film quality, which is evaluated by crystallinity, surface morphology, and transport data. Here we propose and investigate different MBE growth strategies to improve the quality of Bi 2 Se 3 thin films grown by MBE. Based on the surface passivation status, we have classified the substrates into two categories, self-passivated or unpassivated, and determine the optimal growth mechanisms on the representative sapphire and GaAs, respectively. For Bi 2 Se 3 on GaAs, the surface passivation status determines the dominant growth mechanism. In the end, growths of the topological trivial insulator (Bi 0.5 In 0.5 ) 2 Se 3 (BIS) on GaAs are investigated following the protocols proposed.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Accessing the Spectral Function in a Current-Carrying Device

The presence of an electrical transport current in a material is one of the simplest and most important realizations of nonequilibrium physics. The current density breaks the crystalline symmetry and can give rise to dramatic phenomena, such as sliding charge density waves, insulator-to-metal transitions, or gap openings in topologically protected states. Almost nothing is known about how a current influences the electron spectral function, which characterizes most of the solid’s electronic, optical, and chemical properties. In this work, we show that angle-resolved photoemission spectroscopy with a nanoscale light spot provides not only a wealth of information on local equilibrium properties, but also opens the possibility to access the local nonequilibrium spectral function in the presence of a transport current. Unifying spectroscopic and transport measurements in this way allows simultaneous noninvasive local measurements of the composition, structure, many-body effects, and carrier mobility in the presence of high current densities. In the particular case of our graphene-based device, we are able to correlate the presence of structural defects with locally reduced carrier lifetimes in the spectral function and a locally reduced mobility with a spatial resolution of 500 nm.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

In-plane Wilson loop for measurement of quantized non-Abelian Berry flux

Band topology of anomalous quantum Hall insulators can be precisely addressed by computing the Chern numbers of constituent nondegenerate bands, describing the presence of quantized, Abelian Berry flux through the two-dimensional Brillouin zone. Can Berry flux be captured for the SU (2) Berry connection of two -fold degenerate bands in spinful materials preserving space -inversion ($\mathscr{P}$) and time -reversal ($\mathscr{T}$) symmetries without detailed knowledge of underlying basis? We address this question by investigating the correspondence between a non -Abelian generalization of Stokes' theorem and the manifestly gauge -invariant eigenvalues of Wilson loops computed along in -plane contours which preserve the underlying crystalline symmetry. The importance of this correspondence is elucidated by performing natural number resolved classification of ab initio band structures of three-dimensional, Dirac materials. Further, our work underscores how identification of quantized Berry flux, both Abelian and non -Abelian, offers a unified framework for addressing first -order and higher -order topology of insulators and semimetals.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2020

Engineering Corner States from Two-Dimensional Topological Insulators

We theoretically demonstrate that the second-order topological insulator with robust corner states can be realized in two-dimensional $\mathbb{Z}_2$ topological insulators by applying an in-plane Zeeman field. The Zeeman field breaks the time-reversal symmetry and thus destroys the $\mathbb{Z}_2$ topological phase. Nevertheless, it respects some crystalline symmetries and thus can protect the higher-order topological phase. By taking the Kane-Mele model as a concrete example, we find that spin-helical edge states along zigzag boundaries are gapped out by the Zeeman field whereas the in-gap corner state at the intersection between two zigzag edges arises, which is independent of the field orientation. In this work, we further show that the corner states are robust against the out-of-plane Zeeman field, staggered sublattice potentials, Rashba spin-orbit coupling, and the buckling of honeycomb lattices, making them experimentally feasible. Similar behaviors can also be found in the well-known Bernevig-Hughes-Zhang model.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Observation of spin-momentum locked surface states in amorphous Bi 2 Se 3

Crystalline symmetries have played a central role in the identification and understanding of quantum materials. Here we investigate whether an amorphous analogue of a well-known three-dimensional strong topological insulator has topological properties in the solid state. We show that amorphous Bi 2 Se 3 thin films host a number of two-dimensional surface conduction channels. Our angle-resolved photoemission spectroscopy data are consistent with a dispersive two-dimensional surface state that crosses the bulk gap. Spin-resolved photoemission spectroscopy shows this state has an anti-symmetric spin texture, confirming the existence of spin-momentum locked surface states. We discuss these experimental results in light of theoretical photoemission spectra obtained with an amorphous topological insulator tight-binding model, contrasting it with alternative explanations. In conclusion, the discovery of spin-momentum locked surface states in amorphous materials opens a new avenue to characterize amorphous matter and triggers the search for an overlooked subset of quantum materials outside of current classification schemes.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Site-Selective Polar Compensation of Mott Electrons in a Double-Perovskite Heterointerface

Double-perovskite oxides (DPOs) with two transition metal ions ($A_{2}BB'O_{6}$) offer a fascinating platform for exploring exotic physics and practical applications. Studying these DPOs as ultrathin epitaxial films on single crystalline substrates can add another dimension to engineering electronic, magnetic, and topological phenomena. Understanding the consequence of polarity mismatch between the substrate and the DPO would be the first step toward this broad goal. Here, we investigate this by studying the interface between a prototypical insulating DPO $Nd_{2}NiMnO_{6}$ and a wide band gap insulator $SrTiO_{3}$. The interface is found to be insulating in nature. By combining several experimental techniques and density functional theory, we establish a site-selective charge compensation process that occurs explicitly at the Mn site of the film, leaving the Ni sites inert. We further demonstrate that such surprising selectivity, which cannot be explained by existing mechanisms of polarity compensation, is directly associated with their electronic correlation energy scales. This study establishes the crucial role of Mott physics in polar compensation process and paves the way for designer doping strategies in complex oxides.

density functional theory↗
DOE OSTI2020

Twofold symmetry of proximity-induced superconductivity in Bi 2 Te 3 / Bi 2 Sr 2 CaCu 2 O 8 + δ heterostructures revealed by scanning tunneling microscopy

We observe proximity-induced superconductivity in in situ prepared heterostructures constructed by topological insulator Bi 2 Te 3 thin films and high-temperature cuprate superconductors Bi 2 Sr 2 CaCu 2 O 8+δ . The superconducting gap maximum is about 7.6 meV on the surface of Bi 2 Te 3 thin films with a thickness of two quintuple layers, and the gap value decreases with an increase in the film thickness. Moreover, the quasiparticle interference data show clear evidence of a twofold symmetric superconducting gap with gap minima along one pair of the principal crystalline axes of Bi 2 Te 3 . This gap form is consistent with the Δ 4y notation of the topological superconductivity proposed in such systems. Our results provide fruitful information on the possible topological superconductivity induced by the proximity effect in high-temperature superconducting cuprates.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2021

Growth and Development of Quantum Materials

Topological insulators (TIs) display a new state of quantum matter, which is broadly known as quantum materials. The TIs have a unique property of being an insulator as a bulk property and having conducting surface states, which are symmetry-protected Dirac Fermions and well isolated from the bulk valence and conduction bands. Ideally, these topological surface states and bulk electronic states should act independently. The degree to which they intermix depends on the crystalline quality, composition and defects present in the material. These materials thus demand very high-quality crystals to observe the desired quantum properties. We proposed growth of high-quality single crystals and thin films to enhance the ability to fabricate devices with unique performance attributes. Two separate approaches will be made to make the thin films, one is exfoliation of 2D monolayer from the grown single crystals and the second is thin films grown by pulsed laser deposition. Both techniques will subsequently allow for fabrication of meso structures using a Focused Ion Beam technique.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Discovery of a weak topological insulating state and van Hove singularity in triclinic RhBi2

Abstract Time reversal symmetric (TRS) invariant topological insulators (TIs) fullfil a paradigmatic role in the field of topological materials, standing at the origin of its development. Apart from TRS protected strong TIs, it was realized early on that more confounding weak topological insulators (WTI) exist. WTIs depend on translational symmetry and exhibit topological surface states only in certain directions making it significantly more difficult to match the experimental success of strong TIs. We here report on the discovery of a WTI state in RhBi 2 that belongs to the optimal space group P $$\bar{1}$$ 1 ¯ , which is the only space group where symmetry indicated eigenvalues enumerate all possible invariants due to absence of additional constraining crystalline symmetries. Our ARPES, DFT calculations, and effective model reveal topological surface states with saddle points that are located in the vicinity of a Dirac point resulting in a van Hove singularity (VHS) along the (100) direction close to the Fermi energy ( E F ). Due to the combination of exotic features, this material offers great potential as a material platform for novel quantum effects.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Anderson critical metal phase in trivial states protected by average magnetic crystalline symmetry

Transitions between distinct obstructed atomic insulators (OAIs) protected by crystalline symmetries, where electrons form molecular orbitals centering away from the atom positions, must go through an intermediate metallic phase. In this work, we find that the intermediate metals will become a scale-invariant critical metal phase (CMP) under certain types of quenched disorder that respect the magnetic crystalline symmetries on average. We explicitly construct models respecting average C 2z T, m, and C 4z T and show their scale-invariance under chemical potential disorder by the finite-size scaling method. Conventional theories, such as weak anti-localization and topological phase transition, cannot explain the underlying mechanism. A quantitative mapping between lattice and network models shows that the CMP can be understood through a semi-classical percolation problem. Ultimately, we systematically classify all the OAI transitions protected by (magnetic) groups Pm, P2', P4', and P6' with and without spin-orbit coupling, most of which can support CMP.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Quadrupole topological photonic crystals

Quadrupole topological phases, exhibiting protected boundary states that are themselves topological insulators of lower dimensions, have recently been of great interest. Extensions of these ideas from current tight binding models to continuum theories for realistic materials require the identification of quantized invariants describing the bulk quadrupole order. Here we identify the analog of quadrupole order in Maxwell’s equations for a gyromagnetic photonic crystal (PhC) through a double-band-inversion process. The quadrupole moment is quantized by the simultaneous presence of crystalline symmetry and broken time-reversal symmetry, which is confirmed using three independent methods: analysis of symmetry eigenvalues, numerical calculations of the nested Wannier bands and the expectation value of the quadrupole operator. Furthermore, we reveal the boundary manifestations of quadrupole phases as quantized edge polarizations and fractional corner charges. The latter are the consequence of a filling anomaly of energy bands as first predicted in electronic systems.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

Epitaxial growth and magnetic characterization of EuSe thin films with various crystalline orientations

Here, we report different growth modes and corresponding magnetic properties of thin EuSe films grown by molecular beam epitaxy on BaF 2 , Pb 1-x Eu x Se, GaAs, and Bi 2 Se 3 substrates. We show that EuSe grows predominantly in the (001) orientation on GaAs(111) and Bi 2 Se 3 , but along the (111) crystallographic direction on BaF 2 (111) and Pb 1-x Eu x Se (111). High resolution transmission electron microscopy measurements reveal a sharp and highly crystalline interface for both (001) and (111) EuSe films. In agreement with previous studies, ordered magnetic phases include antiferromagnetic, ferrimagnetic, and ferromagnetic phases. In contrast to previous studies, we found a strong hysteresis of the antiferromagnetic–ferrimagnetic transition. The ability to grow epitaxial films of EuSe on Bi 2 Se3 and of Bi 2 Se 3 on EuSe enables further investigation of interfacial exchange interactions between various phases of an insulating metamagnetic material and a topological insulator.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

A Unified View of Topological Phase Transition in Band Theory

We develop a unified view of topological phase transitions (TPTs) in solids by revising the classical band theory with the inclusion of topology. Reevaluating the band evolution from an “atomic crystal” (a normal insulator (NI)) to a solid crystal, such as a semiconductor, we demonstrate that there exists ubiquitously an intermediate phase of topological insulator (TI), whose critical transition point displays a linear scaling between electron hopping potential and average bond length, underlined by deformation-potential theory. The validity of the scaling relation is verified in various two-dimensional (2D) lattices regardless of lattice symmetry, periodicity, and form of electron hoppings, based on a generic tight-binding model. Significantly, this linear scaling is shown to set an upper bound for the degree of structural disorder to destroy the topological order in a crystalline solid, as exemplified by formation of vacancies and thermal disorder. Our work formulates a simple framework for understanding the physical nature of TPTs with significant implications in practical applications of topological materials.

42 ENGINEERING↗
DOE OSTI2024

Measurements of the quantum geometric tensor in solids

Understanding the geometric properties of quantum states and their implications in fundamental physical phenomena is a core aspect of contemporary physics. The quantum geometric tensor (QGT) is a central physical object in this regard, encoding complete information about the geometry of the quantum state. The imaginary part of the QGT is the well-known Berry curvature, which plays an integral role in the topological magnetoelectric and optoelectronic phenomena. The real part of the QGT is the quantum metric, whose importance has come to prominence recently, giving rise to a new set of quantum geometric phenomena such as anomalous Landau levels, flat band superfluidity, excitonic Lamb shifts and nonlinear Hall effect. Despite the central importance of the QGT, its experimental measurements have been restricted only to artificial two-level systems. Here, in this work, we develop a framework to measure the QGT in crystalline solids using polarization-, spin- and angle-resolved photoemission spectroscopy. Using this framework, we demonstrate the effective reconstruction of the QGT in the kagome metal CoSn, which hosts topological flat bands. Establishing this momentum- and energy-resolved spectroscopic probe of the QGT is poised to significantly advance our understanding of quantum geometric responses in a wide range of crystalline systems.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Real-space imaging of periodic nanotextures in thin films via phasing of diffraction data

New properties and exotic quantum phenomena can form due to periodic nanotextures, including Moire patterns, ferroic domains, and topologically protected magnetization and polarization textures. Despite the availability of powerful tools to characterize the atomic crystal structure, the visualization of nanoscale strain-modulated structural motifs remains challenging. Here, we develop nondestructive real-space imaging of periodic lattice distortions in thin epitaxial films and report an emergent periodic nanotexture in a Mott insulator. Specifically, we combine iterative phase retrieval with unsupervised machine learning to invert the diffuse scattering pattern from conventional X-ray reciprocal-space maps into real-space images of crystalline displacements. Our imaging in PbTiO 3 /SrTiO 3 superlattices exhibiting checkerboard strain modulation substantiates published phase-field model calculations. Furthermore, the imaging of biaxially strained Mott insulator Ca 2 RuO 4 reveals a strain-induced nanotexture comprised of nanometer-thin metallic-structure wires separated by nanometer-thin Mott-insulating-structure walls, as confirmed by cryogenic scanning transmission electron microscopy (cryo-STEM). The nanotexture in Ca 2 RuO 4 film is induced by the metal-to-insulator transition and has not been reported in bulk crystals. We expect the phasing of diffuse X-ray scattering from thin crystalline films in combination with cryo-STEM to open a powerful avenue for discovering, visualizing, and quantifying the periodic strain-modulated structures in quantum materials.

Science & Technology - Other Topics↗
DOE OSTI2024

Disorder-driven localization and electron interactions in Bi x ⁢ TeI thin films

Strong disorder has a crucial effect on the electronic structure in quantum materials by increasing localization, interactions, and modifying the density of states. Bi x TeI films grown at room temperature and 230 K exhibit dramatic magnetotransport effects due to disorder, localization, and electron correlation effects, including a metal-insulator transition at a composition that depends on growth temperature. The increased disorder caused by growth at 230 K causes the conductivity to decrease by several orders of magnitude for several compositions of Bi x TeI. The transition from metal to insulator with decreasing composition x is accompanied by a decrease in the dephasing length, which leads to the disappearance of the weak-antilocalization effect. Electron-electron interactions cause low temperature conductivity corrections on the metallic side and Efros-Shklovskii variable range hopping on the insulating side, effects which are absent in single crystalline Bi x TeI. Finally, the observation of a tunable metal-insulator transition and the associated strong localization and quantum effects in Bi x TeI shows the possibility of tuning spin transport in quantum materials via disorder.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Heterovalent semiconductor structures and devices grown by molecular beam epitaxy

Heterovalent structures consisting of group II-VI/group III-V compound semiconductors offer attractive properties, such as a very broad range of bandgaps, large conduction band offsets, high electron and hole mobilities, and quantum-material properties such as electric-field-induced topological insulator states. These properties and characteristics are highly desirable for many electronic and optoelectronic devices as well as potential condensed-matter quantum-physics applications. Here, we provide an overview of our recent studies of the MBE growth and characterization of zincblende II-VI/III-V heterostructures as well as several novel device applications based on different sets of these materials. By combining materials with small lattice mismatch, such as ZnTe/GaSb (Δa/a~0.13%), CdTe/InSb (Δa/a~0.05%), and ZnSe/GaAs (Δa/a~0.26%), epitaxial films of excellent crystallinity were grown once the growth conditions had been optimized. Cross-sectional observations using conventional and atomic-resolution electron microscopy revealed coherent interfaces and close to defect-free heterostructures. Measurements across CdTe/InSb interfaces indicated a limited amount (~1.5 nm) of chemical intermixing. Results for ZnTe/GaSb distributed Bragg reflectors, CdTe/Mg x Cd 1-x Te double heterostructures, and CdTe/InSb two-color photodetectors are briefly presented, and the growth of a rock salt/zincblende PbTe/CdTe/InSb heterostructure is also described.

Materials Science↗