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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
DOE OSTI2026

Magnetic brightening and nanoscale imaging of spin-polarized helical edge modes in ZrTe 5

Efficient charge transport remains a fundamental challenge for nanoelectronic devices, as their performance is constrained by high dissipation and the impedance mismatch between high-frequency signal sources and nanoscale circuit interfaces. Although topologically protected helical edge modes offer a dissipationless and backscattering-resilient alternative, achieving nanoscale control over these modes requires direct visualization of their spatial electrodynamics, especially under high-frequency operation. Here, by utilizing cryogenic magneto-infrared scattering-type scanning near-field optical microscopy (cm-IR-sSNOM), we image spin-polarized helical edge channels in ZrTe 5 at the nanoscale, revealing magnetic-field-induced brightening as a high-frequency electrodynamic signature of robust topological edge modes. Operating at 1.8 K and under a magnetic field of up to 5 T, we observe the emergence of edge-state polarizability at infrared frequencies that is notably resilient to the magnetic gaps that typically quench d.c. and microwave edge transport. Our results reveal a topological ‘two-lane’ spatial reorganization in which an external magnetic field induces a spin-population imbalance between counterpropagating edge modes. Favoured helical branches are confined against physical boundaries to activate a net infrared near-field contrast. This electrodynamic response scales linearly with the number of atomic layers, which confirms that individual layers in ZrTe 5 preserve their discrete quantum spin Hall identities. These findings may be useful for developing topological spintronic devices, as the magnetic infrared tunability of helical edge channels provides a pathway for low-loss nanoscale interconnects and high-speed information processing.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Distinct Composition‐Dependent Topological Hall Effect in Mn 2‐x Zn x Sb

Abstract Spintronics, an evolving interdisciplinary field at the intersection of magnetism and electronics, explores innovative applications of electron charge and spin properties for advanced electronic devices. The topological Hall effect (THE), a key component in spintronics, has gained significance due to emerging theories surrounding noncoplanar chiral spin textures. This study focuses on Mn 2‐x Zn x Sb, a material crystalizing in centrosymmetric space group with rich magnetic phases tunable by Zn contents. Through comprehensive magnetic and transport characterizations, we found that the high‐Zn ( x > 0.6) samples display THE which is enhanced with decreasing temperature, while THE in the low‐Zn ( x < 0.6) samples show an opposite trend. The coexistence of those distinct temperature dependencies for THE suggests very different magnetic interactions/structures for different compositions and underscores the strong coupling between magnetism and transport in Mn 2‐x Zn x Sb. The findings contribute to understanding topological magnetism in centrosymmetric tetragonal lattices, establishing Mn 2‐x Zn x Sb as a unique platform for exploring tunable transport effects and opening avenues for further exploration in the realm of spintronics.

Nabi, Md Rafique Un↗
DOE OSTI2020

Criteria for Realizing Room-Temperature Electrical Transport Applications of Topological Materials

The unusual electronic states found in topological materials can enable a new generation of devices and technologies, yet a long-standing challenge has been finding materials without deleterious parallel bulk conduction. This can arise either from defects or thermally activated carriers. In this study, the criteria that materials need to meet to realize transport properties dominated by the topological states, a necessity for a topological device, are clarified. This is demonstrated for 3D topological insulators, 3D Dirac materials, and 1D quantum anomalous Hall insulators, though this can be applied to similar systems. The key parameters are electronic bandgap, dielectric constant, and carrier effective mass, which dictate under what circumstances (defect density, temperature, etc.) the unwanted bulk state will conduct in parallel to the topological states. As these are fundamentally determined by the basic atomic properties, simple chemical arguments can be used to navigate the phase space to ultimately find improved materials. This will enable rapid identification of new systems with improved properties, which is crucial to designing new material systems and push a new generation of topological technologies.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Classifying Topology in Photonic Heterostructures with Gapless Environments

Photonic topological insulators exhibit bulk-boundary correspondence, which requires that boundary-localized states appear at the interface formed between topologically distinct insulating materials. However, many topological photonic devices share a boundary with free space, which raises a subtle but critical problem as free space is gapless for photons above the light line. Here, we use a local theory of topological materials to resolve bulk-boundary correspondence in heterostructures containing gapless materials and in radiative environments. In particular, we construct the heterostructure’s spectral localizer, a composite operator based on the system’s real-space description that provides a local marker for the system’s topology and a corresponding local measure of its topological protection; both quantities are independent of the material’s bulk band gap (or lack thereof). Moreover, we show that approximating radiative outcoupling as material absorption overestimates a heterostructure’s topological protection. Importantly, as the spectral localizer is applicable to systems in any physical dimension and in any discrete symmetry class (i.e., any Altland-Zirnbauer class), our results show how to calculate topological invariants, quantify topological protection, and locate topological boundary-localized resonances in topological materials that interface with gapless media in general.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2021

Crystalline materials for quantum computing: Semiconductor heterostructures and topological insulators exemplars

Abstract High-purity crystalline solid-state materials play an essential role in various technologies for quantum information processing, from qubits based on spins to topological states. New and improved crystalline materials emerge each year and continue to drive new results in experimental quantum science. This article summarizes the opportunities for a selected class of crystalline materials for qubit technologies based on spins and topological states and the challenges associated with their fabrication. We start by describing semiconductor heterostructures for spin qubits in gate-defined quantum dots and benchmark GaAs, Si, and Ge, the three platforms that demonstrated two-qubit logic. We then examine novel topologically nontrivial materials and structures that might be incorporated into superconducting devices to create topological qubits. We review topological insulator thin films and move onto topological crystalline materials, such as PbSnTe, and its integration with Josephson junctions. We discuss advances in novel and specialized fabrication and characterization techniques to enable these. We conclude by identifying the most promising directions where advances in these material systems will enable progress in qubit technology.

Scappucci, G. (ORCID:0000000325120079)↗
DOE OSTI2022

Low Index Contrast Valley Hall Topological Photonics for Robust Transport in the Visible Spectrum

We report topological photonics is an emerging platform to study light-matter interactions with promising features such as robust edge state transmission that could be advantageous for quantum information applications. However, applying common topological photonic designs for visible wavelength light-matter interactions is challenging because materials compatible with the visible spectrum have lower refractive index contrasts. We design and demonstrate a novel valley Hall topological photonic crystal that can support a complete topological band gap in the visible spectrum. We also show an overetch procedure can be used to reduce the leakage loss common for low index contrast materials. To demonstrate these advantages, we fabricate topological photonic devices following these design principles and show that edge states at energies in the complete band gap have robust transmission around sharp corners. The compatibility of this photonic structure with straightforward fabrication methods will facilitate the study of interactions between topologically nontrivial photons and nanomaterials active in the visible spectrum.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Topological Antiferromagnetic Van der Waals Phase in Topological Insulator/Ferromagnet Heterostructures Synthesized by a CMOS-Compatible Sputtering Technique

Breaking time-reversal symmetry by introducing magnetic order, thereby opening a gap in the topological surface state bands, is essential for realizing useful topological properties such as the quantum anomalous Hall and axion insulator states. In this work, a novel topological antiferromagnetic (AFM) phase is created at the interface of a sputtered, c-axis-oriented, topological insulator/ferromagnet heterostructure—Bi 2 Te 3 /Ni 80 Fe 20 because of diffusion of Ni in Bi 2 Te 3 (Ni-Bi 2 Te 3 ). The AFM property of the Ni-Bi2Te3 interfacial layer is established by observation of spontaneous exchange bias in the magnetic hysteresis loop and compensated moments in the depth profile of the magnetization using polarized neutron reflectometry. Analysis of the structural and chemical properties of the Ni-Bi2Te3 layer is carried out using selected-area electron diffraction, electron energy loss spectroscopy, and X-ray photoelectron spectroscopy. These studies, in parallel with first-principles calculations, indicate a solid-state chemical reaction that leads to the formation of Ni=Te bonds and the presence of topological antiferromagnetic (AFM) compound NiBi 2 Te 4 in the Ni-Bi 2 Te 3 interface layer. The Neél temperature of the Ni-Bi 2 Te 3 layer is ≈ 63 K, which is higher than that of typical magnetic topological insulators (MTIs). The presented results provide a pathway toward industrial complementary metal-oxide-semiconductor (CMOS)-process-compatible sputtered-MTI heterostructures, leading to novel materials for topological quantum devices.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Control of electronic topology in a strongly correlated electron system

It is becoming increasingly clear that breakthrough in quantum applications necessitates materials innovation. In high demand are conductors with robust topological states that can be manipulated at will. This is what we demonstrate in the present work. We discover that the pronounced topological response of a strongly correlated “Weyl-Kondo” semimetal can be genuinely manipulated—and ultimately fully suppressed—by magnetic fields. We understand this behavior as a Zeeman-driven motion of Weyl nodes in momentum space, up to the point where the nodes meet and annihilate in a topological quantum phase transition. The topologically trivial but correlated background remains unaffected across this transition, as is shown by our investigations up to much larger fields. Our work lays the ground for systematic explorations of electronic topology, and boosts the prospect for topological quantum devices.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Topology Optimization for Full-Cell Electrochemical Energy Storage Device

This code is used to conduct topology optimization of a general full cell energy storage device. The anode and cathode designs are optimized simultaneously, allowing possibility for interdigitation. The charging mechanism can consist of both electric double layer charging (EDLC) typically observed in capacitors and redox reaction typically observed in batteries.

Roy, Thomas↗
DOE OSTI2022

Epitaxial Dirac Semimetal Vertical Heterostructures for Advanced Device Architectures

Exploiting the extraordinary transport and optical properties of 3D topological semimetals for device applications requires epitaxial integration with semiconductors to carefully control carrier transport, yet no studies have established heteroepitaxy on top of any topological semimetals to date. Here, a novel approach toward fabricating heterostructures is demonstrated by epitaxially incorporating the Dirac semimetal Cd 3 As 2 between Zn x Cd 1-x Te and CdTe layers via molecular beam epitaxy on GaAs (001) substrates. The approach utilizes the higher energy (001) surface of Cd 3 As 2 to stabilize 2D epitaxy of zinc blende semiconductors. To demonstrate the impact heterostructure formation offers to device performance, an all-epitaxial, barrier-type vertical photodetector is fabricated that accesses a different carrier separation mechanism than previously reported non-epitaxial junctions and consequently exhibits significantly reduced dark currents. Finally, the results highlight the important role that epitaxial integration can play in accessing advanced architectures for topological semimetal-based devices.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Quantum transport response of topological hinge modes

Electronic topological phases are typified by the conducting surface states that exist on the boundary of an insulating three-dimensional bulk. While the transport response of the two-dimensional surface states has been studied, the quantum response of the one-dimensional hinge modes has not been demonstrated. Here we provide evidence for quantum transport in gapless topological hinge states existing within the insulating bulk and surface energy gaps in the intrinsic topological insulator α-Bi 4 Br 4 . Our magnetoresistance measurements reveal pronounced Aharonov–Bohm oscillations that are periodic in h/e (where h denotes Planck’s constant and e is the electron charge). The observed periodicity evinces quantum interference of electrons circumnavigating around the hinges. We also demonstrate that the h/e oscillations evolve as a function of magnetic field orientation, following the interference paths along the hinge modes that are allowed by topology and symmetry. Furthermore, our findings reveal the quantum transport response of topological hinge modes with both topological nature and quantum coherence, which can eventually be applied to the development of efficient topological electronic devices.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2023

Two-dimensional Dirac semimetal based on the alkaline earth metal CaP 3

Using an evolutionary algorithm in combination with first-principles density-functional theory calculations, we identify a two-dimensional (2D) CaP 3 monolayer as a new Dirac semimetal due to inversion and nonsymmorphic spatial symmetries of the structure. This new topological material, composed of light elements, exhibits high structural stability (higher than the phase known in the literature), which is confirmed by thermodynamic and kinetic stability analysis. Moreover, it satisfies the electron filling criteria, so that its Dirac state is located near the Fermi level. The existence of the Dirac state predicted by the theoretical symmetry analysis is also confirmed by first-principles electronic band structure calculations. We find that the energy position of the Dirac state can be tuned by strain, while the Dirac state is unstable against an external electric field since it breaks the spatial inversion symmetry. In conclusion, our findings should be instrumental in the development of 2D Dirac fermions based on light elements for their application in nanoelectronic devices and topological electronics.

2-dimensional systems↗
DOE OSTI2021

Current-induced dynamics and tunable spectra of a magnetic chiral bobber

Chiral bobber (ChB) is an exotic three-dimensional topological texture in chiral magnets. It is composed of a Bloch-point singularity and a skyrmion tube; the incommensurate characteristic length scales of these two components would thus lead to novel dynamics of a ChB. In this work, we report the current-induced motion and the accompanying Hall effect of a ChB. Surprisingly, we find that the Hall angle of a ChB can be tuned in a wide range from -90 ° to positive angles. A further study of spin-wave excitations identified high-frequency resonant modes, which are related to the velocity of ChB and lattice constants. The excited frequency can be two orders of magnitude higher than that of skyrmions. The broad ranges of Hall angles and frequency spectra could boost the development of spintronic devices using topological textures.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Unconventional Superlattice Ordering in Intercalated Transition Metal Dichalcogenide V1/3NbS2

The interplay between symmetry and topology in magnetic materials makes it possible to engineer exotic phases and technologically useful properties. A key requirement for these pursuits is achieving control over local crystallographic and magnetic structure, usually through sample morphology (such as synthesis of bulk crystals versus thin films) and application of magnetic or electric fields. Here we show that V1/3NbS2 can be crystallized in two ordered superlattices, distinguished by the periodicity of out-of-plane magnetic intercalants. Whereas one of these structures is metallic and displays the hallmarks of altermagnetism, the other superlattice, which has not been isolated before in this family of intercalation compounds, is a semimetallic noncollinear antiferromagnet that may enable access to topologically nontrivial properties. This observation of an unconventional superlattice structure establishes a powerful route for tailoring the tremendous array of magnetic and electronic behaviors hosted in related materials and may expand their use in low-power spintronic or topological quantum devices.

Fender, Shannon S↗
DOE OSTI2025

Spectrally sharp magnetic excitations above the critical temperature in a frustrated Weyl semimetal

The rare-earth α-pyrochlore iridates are a prospective class of conducting frustrated magnets where electronic correlations, large spin-orbit coupling, and geometrical frustration interplay, leading to a rich set of magnetic and electronic phases. Despite their intriguing properties, the magnetic order and excitations in this fundamental class of topological quantum materials remain poorly understood due to challenges in growing large single crystals and insufficient microscopic information on their temperature-dependent phases. Here, by combining state-of-the-art thin-film synthesis, resonant elastic and inelastic X-ray scattering, spin wave analysis, and dynamical spin susceptibility calculations, we unequivocally reveal the presence of spectrally sharp, gapped magnetic excitations in Y 2 Ir 2 O 7 that surprisingly persist well above the Néel transition temperature, signaling the presence of a quasi-universal regime connected to fluctuations on frustrated lattices. This finding implies the existence of a highly unusual cooperative paramagnetic (CP) phase above the ordering temperature and offers an explanation for the puzzling high-temperature magnetic behavior observed across the family of metallic pyrochlore crystals. Understanding such magnetic excitations at technologically relevant temperatures opens up possibilities for novel topological spintronic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Dynamic realization of emergent high-dimensional optical vortices

The dimensionality of vortical structures has recently been extended beyond two dimensions, providing additional topological complexity and robustness for high-capacity information processing and turbulence control. The generation of high-dimensional vortical structures has mostly been demonstrated in classical systems through the complex interference of fluidic, acoustic, or electromagnetic waves. However, natural materials rarely support three- or higher-dimensional vortical structures and their physical interactions. Here, we experimentally demonstrate a high-dimensional gradient thickness optical cavity (GTOC) in which the optical coupling of planar metal-dielectric multilayers implements topological interactions across multiple dimensions. At non-trivial topological phases, high-dimensional GTOC induces high-dimensional vortical structures in generalized parameter space in three, four dimensions, and beyond. These emergent high-dimensional vortical structures are observed under electro-optic tomography as optical vortex dynamics in two-dimensional real-space, employing the optical thicknesses of dielectric layers as synthetic dimensions. Our findings hold significant promise for emulating high-dimensional physics and developing active topological photonic devices.

36 MATERIALS SCIENCE↗
DOE OSTI2025

The proximity effect and critical field behavior of Re/Al bilayers

Abstract We report the perpendicular critical field H c 2 properties of disordered Re-Al bilayers via magneto-transport measurements. The bilayers consisted of a d Re = 3 nm bottom layer of Re and an upper Al layer with thickness varying between d Al = 0 − 3 nm. We find that in this range of Al thicknesses, the bilayer transition temperature T c increases with increasing Al thickness, although their monolayer counterparts have T c Re > T c Al . Furthermore, H c 2 of the bilayers has a local maximum at an Al coverage of 1.5 nm with a critical field that is 50% larger than that of the standalone 3 nm Re film. At higher Al thicknesses H c 2 drops rapidly but remains more than an order of magnitude greater that that of comparable thickness standalone Al film. Our data show that a thin, disordered Re under-layer can dramatically increase the magnetic field tolerance of the Al over-layer. This would allow one to retain the desirable chemical and metallurgical properties of Al without sacrificing high field compatibility in quantum circuits, such as topological qubit devices and superinductor circuits.

Womack, F. N. (ORCID:0009000810391507)↗
DOE OSTI2021

Dependence of the electronic structure of the EuS/InAs interface on the bonding configuration

The EuS/InAs interface has recently attracted attention for the possibility of inducing magnetic exchange correlations in a strong spin-orbit semiconductor, which could be useful for topological quantum devices. We use density functional theory with a machine-learned Hubbard U correction [Yu et al., npj Comput. Mater. 6, 180 (2020)] to elucidate the effect of the bonding configuration at the interface on the electronic structure. For all interface configurations considered here, we find that the EuS valence band maximum (VBM) lies below the InAs VBM. In addition, dispersed states emerge at the top of the InAs VBM at the interface, which do not exist in either material separately. These states are contributed mainly by the InAs layer adjacent to the interface. They are localized at the interface and may be attributed to charge transfer from the EuS to the InAs. The interface configuration affects the position of the EuS VBM with respect to the InAs VBM, as well as the dispersion of the interface states. For all interface configurations studied here, the induced magnetic moment in the InAs is small. Our results suggest that this interface, in its coherent form studied here, may not be promising for inducing equilibrium magnetic properties in InAs.

36 MATERIALS SCIENCE↗