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Results for “transparent electronics”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 55 records · Page 3
All sourcesNASA NTRSDOE OSTI
DOE OSTI2021

Spectroscopy of Rydberg states in erbium using electromagnetically induced transparency

We present a study of the Rydberg spectrum in 166 Er for series connected to the 4 f 12 ( 3 H 6 )6s, J c = 13/2 and J c = 11/2 ionic core states using an all-optical detection based on electromagnetically induced transparency in an effusive atomic beam. Identifying approximately 550 individual states, we find good agreement with a multi-channel quantum defect theory (MQDT) which allows assignment of most states to ns or nd Rydberg series. We provide an improved accuracy for the lowest two ionization thresholds to E IP, J c =13/2 = 49260:750(1) cm -1 and E IP, J c =11/2 = 49701:184(1) cm -1 as well as the corresponding quantum defects for all observed series. We identify Rydberg states in five different isotopes, and states between the two lowest ionization thresholds. Our results open the way for future applications of Rydberg states for quantum simulation using erbium and exploiting its special open-shell structure.

74 ATOMIC AND MOLECULAR PHYSICS↗
DOE OSTI2021

Structure-property relationships and mobility optimization in sputtered La-doped BaSn O 3 films: Toward 100cm 2 V -1 s -1

he wide band gap semiconducting perovskite BaSnO 3 is of high current interest due to outstanding room temperature mobility at high electron density, fueled by potential applications in oxide, transparent, and power electronics. Due in part to a lack of lattice-matched substrates, BaSnO 3 thin films suffer from high defect densities, however, limiting electron mobility. Additionally, the vast majority of BaSnO 3 thin film research has focused on pulsed laser deposition or molecular beam epitaxy. In this work, we present an exhaustive optimization of the mobility of Ba 0.98 La 0.02 SnO 3 films grown by a scalable, high-throughput method: high-pressure-oxygen sputter deposition. Considering target synthesis conditions, substrate selection, buffer layer structure, deposition temperature, deposition rate, thickness, and postdeposition annealing conditions, and by combining high-resolution x-ray diffraction, reciprocal space mapping, rocking curve analysis, scanning transmission electron microscopy, atomic force microscopy, and temperature-dependent electronic transport measurements, detailed understanding of synthesis-structure-property relationships is attained. Optimized room temperature mobility of 96 cm 2 V –1 s –1 is achieved in vacuum-annealed GdScO 3 (110)/BaSnO 3 (120 nm)/Ba 0.98 La 0.02 SnO 3 (200 nm) heterostructures, as well as 92 cm 2 V –1 s –1 on unbuffered substrates and 87 2 V –1 s –1 without postdeposition annealing. These results, including important trends in defect densities and a surprising dependence of mobility on lattice mismatch, substantially expand the understanding of the interplay between deposition conditions, microstructure, and transport in doped BaSnO 3 films, establishing competitive mobilities in films fabricated via a scalable, high-throughput, industry-standard technique.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Boron phosphide as a p-type transparent conductor: Optical absorption and transport through electron-phonon coupling

Boron phosphide has recently been identified as a potential high-hole-mobility transparent conducting material. This promise arises from its low hole effective masses. However, boron phosphide has a relatively small, 2 eV, indirect bandgap which will affect its transparency. In this study, we computationally study both optical absorption across the indirect gap and phonon-limited electronic transport to quantify the potential of boron phosphide as a p-type transparent conductor. We find that phonon-mediated indirect optical absorption is weak in the visible spectrum and that the phonon-limited hole mobility is very high (around 900 cm 2 /Vs) at room temperature. This exceptional mobility comes from the combination of a low hole effective mass and very weak scattering by polar phonon modes. We rationalize the weak scattering by the less ionic bonding in boron phosphide compared to oxides. We suggest that this could be a general advantage of nonoxides for p-type transparent conducting applications. Using our computed properties, we assess the transparent conductor figure of merit of boron phosphide and show that it exceeds by one order of magnitude that of established p-type transparent conductors, confirming the potential of this material.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Birefringence in thermally anisotropic relativistic plasmas and its impact on laser–plasma interactions

One of the paradigm-shifting phenomena triggered in laser–plasma interactions at relativistic intensities is the so-called relativistic transparency. As the electrons become heated by the laser to relativistic energies, the plasma becomes transparent to the laser light even though the plasma density is sufficiently high to reflect the laser pulse in the non-relativistic case. This paper highlights the impact that relativistic transparency can have on laser-matter interactions by focusing on a collective phenomenon that is associated with the onset of relativistic transparency: plasma birefringence in thermally anisotropic relativistic plasmas. Here, the optical properties of such a system become dependent on the polarization of light, and this can serve as the basis for plasma-based optical devices or novel diagnostic capabilities.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2022

Measuring the Electric Dipole Moment of the Electron in a Two-Energy Spin-Transparent Storage Ring

We will present a new design of a two-energy storage ring for low energy (0.2 to 2 MeV) polarized electron bunches [1]. The new design is based on the transparent spin methodology that cancels the spin precession due to the magnetic dipole moment at any energy while allowing for spin precession induced by the fundamental physics of interest to accumulate. The buildup of the vertical component of beam polarization can be measured using standard Mott polarimetry that is optimal at low electron energy. These rings can be used to measure the permanent electric dipole moment of the electron, relevant to CP violation and matter-antimatter asymmetry in the universe, and to search for dark energy and ultra-light dark matter.

Suleiman, R.↗
DOE OSTI2022

Measuring the Electric Dipole Moment of the Electron in a Two-Energy Spin-Transparent Storage Ring

We will present a new design of a two-energy storage ring for low energy (0.2 to 2 MeV) polarized electron bunches [1]. The new design is based on the transparent spin methodology that cancels the spin precession due to the magnetic dipole moment at any energy while allowing for spin precession induced by the fundamental physics of interest to accumulate. The buildup of the vertical component of beam polarization can be measured using standard Mott polarimetry that is optimal at low electron energy. These rings can be used to measure the permanent electric dipole moment of the electron, relevant to CP violation and matter-antimatter asymmetry in the universe, and to search for dark energy and ultra-light dark matter.

Suleiman, R.↗
DOE OSTI2026

Solution-Processed Oxide Thin Films for Perovskite Photovoltaics (Final Report)

The overarching goal of the voucher project is to evaluate the suitability of NexTC materials as functional layers in perovskite photovoltaic technology. There are several different perovskite device configurations that are being pursued for commercialization. Most are superstrate configuration (light enters the device through the glass substrate) and can be subdivided into two categories: PIN and NIP. At minimum, PIN devices have a transparent conductor (typically Indium Tin Dioxide [ITO] or Fluorine-Doped Tin Oxide [FTO]) and hole transport layer (HTL) deposited on glass before the perovskite is deposited. Alternatively, NIP devices have a transparent conductor and electron transport layer (ETL) deposited before the perovskite is deposited. NexTC produces several inks that can be deposited to replace or modify the transparent conductor and/or the ETL or HTL, depending on the device. NLR will produce PIN and NIP perovskite devices on substrates that have been coated by NexTC and compare to NLR-standard devices that perform among the best for research labs across the world. The work will ultimately expose NexTC products to the up-and-coming perovskite PV industry.

14 SOLAR ENERGY↗
DOE OSTI2025

Electron cyclotron emission measurements and modeling in optically semi-transparent plasma on the HSX stellarator

On the Helically Symmetric Experiment (HSX), electron cyclotron emission (ECE) at the second harmonic of the electron gyrofrequency is measured with a 16-channel heterodyne receiver. An ECE radiometer diagnostic has been calibrated with a broadband frequency source, allowing independent measurements of the electron temperature. The antenna pattern has a significant impact on the measurements, and modeling its effect is necessary to produce an ECE radiation temperature spectrum. Measurements, calibration results, and modeling of the ECE data are presented in this paper. At a relatively high plasma density, HSX plasmas are thermal, and the radiation temperature measured by the radiometer is in good agreement with the electron temperature measured by a Thomson scattering diagnostic. At a relatively low plasma density, the deviation from a Maxwellian distribution is large, and asymmetry in the radiation temperature profile is measured. These measurements are supported by single-pass and multi-pass ray tracing calculations of the electron cyclotron emission using the TRAVIS ray tracing code. Thermal and nonthermal electron populations exist in HSX, and the effect of these populations on the asymmetry in the measured emission is presented.

Cyclotron radiation↗
DOE OSTI2021

Atomlike interaction and optically tunable giant band-gap renormalization in large-area atomically thin MoS2

Coulomb interactions in atomically thin transition metal dichalcogenides can be dynamically engineered by exploiting the dielectric environment to control the optical and electronic properties. Here we demonstrate an optically tunable giant band-gap renormalization (BGR) ~1200 and 850 meV from the edge of the conduction band and complete suppression of the exciton absorption in large-area single-layer (1L) and three-layer (3L) MoS2, respectively. The observed giant BGR is two orders of magnitude larger than that in the conventional semiconductors, and it persists for tens of ps. Strikingly, our results demonstrate photoinduced transparency at the electronic band gap using an intense optical field at room temperature. Exciton bleach recovery in 1L and 3L show a contrasting fluence-dependent response, demonstrating the layer-dependent optical tuning of exciton lifetime in a way that would be both reversible and real time. We find that the optical band gap (exciton resonance peak) shows a transient redshift followed by an anomalous blueshift from the lowest energy point as a function of the photo-generated carrier density. The observed exciton energy shift is analogous to atom-atom interactions, and it varies as a Lennard-Jones like potential as a function of the interexciton separation.

2D semiconductors↗
DOE OSTI2026

Oligoether-Functionalized PEDOT: Combining an EDOT Backbone with Polar Side Chains for Solution Processability and High Electrical Conductivity

Conjugated polymers functionalized with oligoether (OE)-based side chains are a key class of materials for various organic electronic applications, including transparent electrodes, thermoelectrics, electrochromic displays, and electrochemical transistors. Herein, we report a highly soluble OE-functionalized poly(3,4-ethylenedioxythiophene) (PEDOT) homopolymer, prepared by direct (hetero)arylation polymerization, which allows solution processing to yield films with comparable redox properties to oxidatively polymerized PEDOT. This polymer, PEDOT(OE3), when optimally oxidatively doped, reaches among the highest electrical conductivities of any OE-functionalized polymer and is comparable to more synthetically complex OE-functionalized polymers. X-ray scattering and spectroscopy were utilized to rationalize the transport properties resulting from varying the doping level. Comparison of PEDOT(OE3) to a series of OE-functionalized dioxythiophenes with varying amounts of 3,4-ethylenedioxythiophene units allows for a deeper understanding of structure–property relationships through charge-transport models. Ultimately, PEDOT(OE3) is shown to be a material with exceptional charge-transport properties and is promising for various applications.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Co-templating of polyoxoniobates and silicate/germanate trimer-rings in crystals and inorganic gels

Polyoxometalate (POM) supramolecular gels are a growing family of materials, both for understanding fundamental self-assembly and fabricating flexible monolithic materials that retain the function of metal oxides. Here, we exploited the pH-dependent speciation of polyoxoniobates (PONbs), targeting the formation of PONb-containing supramolecular gels that contain other low molecular weight components (silicate, germanate, phosphate, and carbonate). The introduction of gaseous CO 2 into aqueous hexaniobate solutions resulted in the formation of both new crystalline phases and highly transparent gels. The crystalline phases, formulated Cs 24 [Nb 7 O 22 (NbO(CO 3 ) 2 ) 9 (Si 3 O 9 )]·19.6H 2 O and Cs 21 Na 3 [Nb 7 O 22 (NbO(CO 3 ) 2 ) 9 (Ge 3 O 9 )]·33.6H 2 O are templated by a rare planar [X 3 O 9 ] 6− (X = Si, Ge) ring. Crystalline phases were not obtained with phosphate; instead, the gels contain a mixture of phosphate-centred PONbs and network-forming phosphate. POM speciation within the gels, physical properties, and assembly mechanisms were benchmarked by solution and solid-state nuclear magnetic resonance (NMR) spectroscopy, vibrational spectroscopies, small-angle X-ray scattering (SAXS), and thermogravimetry-mass spectroscopy. Optical analysis and dielectric behavior of the gels confirmed that they are highly transparent ionic and electronic conductors. The alkali and hydroxide concentration controls the formation of crystalline materials or supramolecular gels while maintaining the same network building blocks, providing a rare opportunity to describe the molecular-level structure of inorganic amorphous materials.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2022

Free Energy Dependencies for Interfacial Electron Transfer from Tin-Doped Indium Oxide (ITO) to Molecular Photoredox Catalysts

John B. Goodenough proposed that interfacial electron transfer kinetics from main group metal oxides should be fundamentally different from that of transition metal oxides, an expectation that has not been widely tested. Herein, the kinetics for interfacial electron transfer from mesoporous transparent conductive oxide Tin-doped Indium Oxide (ITO) to four photoredox catalysts (PCs) were characterized in acetonitrile electrolytes. The photocatalysts had the form: [Ru(4,4ʹ-R 2 -2,2′-bipyridine) 2 (4,4ʹ-(PO 3 H 2 ) 2 -2,2′-bipyridine)] 2+ , where R was H, methoxy, tert -butyl, and Br. The impact of the surface binding group was characterized with [Ru(2,2′-bipyridine) 2 (4,4ʹ-(CO 2 H) 2 -bpy)] 2+ . The interfacial electron transfer reaction ITO(e − )∣PC + → ITO∣PC was quantified by nanosecond absorption spectroscopy as a function of the applied potential (and hence ‒Δ G °). Specific conditions of applied potential were identified where the kinetics were sensitive to the incident irradiance. A layer-by-layer method was used to insert ionic methylene bridge(s) between the PC and the oxide surface. Marcus-Gerischer analysis of the kinetic data indicates non-adiabatic interfacial electron transfer with total reorganization energies that increase when bridges were placed between the photocatalyst and the ITO surface.

Bangle, Rachel E.↗
DOE OSTI2023

Systems and methods for organic semiconductor devices with sputtered contact layers

Systems and methods for organic semiconductor devices with sputtered contact layers are provided. In one embodiment, an organic semiconductor device comprises: a first contact layer comprising a first sputter-deposited transparent conducting oxide; an electron transport layer interfacing with the first contact layer; a second contact layer comprising a second sputter-deposited transparent conducting oxide; a hole transport layer interfacing with the second contact layer; and an organic semiconductor active layer having a first side facing the electron transport layer and an opposing second side facing the hole transport layer; wherein either the electron transport layer or the hole transport layer comprises a buffering transport layer.

Hammond, Scott R.↗
DOE OSTI2024

Systems and methods for organic semiconductor devices with sputtered contact layers

Systems and methods for organic semiconductor devices with sputtered contact layers are provided. In one embodiment, an organic semiconductor device comprises: a first contact layer comprising a first sputter-deposited transparent conducting oxide; an electron transport layer interfacing with the first contact layer; a second contact layer comprising a second sputter-deposited transparent conducting oxide; a hole transport layer interfacing with the second contact layer; and an organic semiconductor active layer having a first side facing the electron transport layer and an opposing second side facing the hole transport layer; wherein either the electron transport layer or the hole transport layer comprises a buffering transport layer.

Hammond, Scott R.↗
DOE OSTI2020

Systems and methods for organic semiconductor devices with sputtered contact layers

Systems and methods for organic semiconductor devices with sputtered contact layers are provided. In one embodiment, an organic semiconductor device comprises: a first contact layer (140) comprising a first sputter-deposited transparent conducting oxide; an electron transport layer (130) interfacing with the first contact layer; a second contact layer (110) comprising a second sputter-deposited transparent conducting oxide; a hole transport layer interfacing with the second contact layer; and an organic semiconductor active layer (120) having a first side facing the electron transport layer and an opposing second side facing the hole transport layer; wherein either the electron transport layer or the hole transport layer comprises a buffering transport layer.

Hammond, Scott R.↗
DOE OSTI2024

Direct Visualization of Laser-Induced Coalescence and Alloying of Au into Ag Nanowires

Noble metal nanocomposites with controlled morphology and composition have been largely useful in a wide variety of applications like catalysis, plasmonics, and biological applications. Herein, we show pulsed-laser-assisted fabrication of beaded Au-Ag nanowires with a variety of morphologies and compositions via coalescence and alloying of Au nanoparticles (NP) into a Ag nanowire (NW). Direct visualization of the evolution process with in situ laser heating transmission electron microscopy (ILH-TEM) leads to unambiguous insights into the mechanism of formation for the first time. Ag, being a soft material, melts at the surface to bridge the gap between the NP-NW, forming a cup-like morphology underneath the Au NP via capillary action. Progressive laser irradiation leads to wetting of the Au NP with Ag, forming an envelope around the NP. This is associated with the formation of a valley in Ag NW around the NP, which flattens gradually by partial embedding of the NP. Interdiffusion of Au into Ag and vice versa sets in at this stage, leading to the depletion of Au from the Au-rich NP region. Prolonged irradiation leads to gradual intermixing of Au-Ag forming beaded Au-doped Ag nanowires with homogeneous composition. Such a step-by-step understanding of the coalescence and alloying process has implications in nanowelding, which holds the future in designing efficient transparent conductors and printed electronics.

Isik, Tugba↗