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At least 55 records · Page 3

Simulation of Ultra-Small MOSFETs Using a 2-D Quantum-Corrected Drift-Diffusion Model

The continued down-scaling of electronic devices, in particular the commercially dominant MOSFET, will force a fundamental change in the process of new electronics technology development in the next five to ten years. The cost of developing new technology generations is soaring along with the price of new fabrication facilities, even as competitive pressure intensifies to bring this new technology to market faster than ever before. To reduce cost and time to market, device simulation must become a more fundamental, indeed dominant, part of the technology development cycle. In order to produce these benefits, simulation accuracy must improve markedly. At the same time, device physics will become more complex, with the rapid increase in various small-geometry and quantum effects. This work describes both an approach to device simulator development and a physical model which advance the effort to meet the tremendous electronic device simulation challenge described above. The device simulation approach is to specify the physical model at a high level to a general-purpose (but highly efficient) partial differential equation solver (in this case PROPHET, developed by Lucent Technologies), which then simulates the model in 1-D, 2-D, or 3-D for a specified device and test regime. This approach allows for the rapid investigation of a wide range of device models and effects, which is certainly essential for device simulation to catch up with, and then stay ahead of, electronic device technology of the present and future. The physical device model used in this work is the density-gradient (DG) quantum correction to the drift-diffusion model [Ancona, Phys. Rev. B 35(5), 7959 (1987)]. This model adds tunneling and quantum smoothing of carrier density profiles to the drift-diffusion model. We used the DG model in 1-D and 2-D (for the first time) to simulate both bipolar and unipolar devices. Simulations of heavily-doped, short-base diodes indicated that the DG quantum corrections do not have a large effect on the IN characteristics of electronic devices without heteroj unction s. On the other hand, ultra-small MOSFETs certainly exhibit important quantum effects that the DG model will include: quantum repulsion of the inversion and gate charges from the oxide interfaces, and quantum tunneling through thin gate oxides. We present initial results of 2-D DG simulations of ultra-small MOSFETs. Subtle but important issues involving the specification of the model, boundary conditions, and interface constraints for DG simulation of MOSFETs will also be illuminated.

Biegal, Bryan A.↗

Decomposition of nitric oxide in a hot nitrogen stream to synthesize air for hypersonic wind tunnel combustion testing

A clean source of high enthalpy air was obtained from the exothermic decomposition of nitric oxide in the presence of strongly heated nitrogen. A nitric oxide jet was introduced into a confined coaxial nitrogen stream. Measurements were made of the extent of mixing and reaction. Experimental results are compared with one- and two-dimensional chemical kinetics computations. Both analyses predict much lower reactivity than was observed experimentally. Inlet nitrogen temperatures above 2400 K were sufficient to produce experimentally a completely reacted gas stream of synthetic air.

Zumdieck, J. F.↗

The chemisorption of H2O, HCOOH and CH3COOH on thin amorphous films of Al2O3

Investigation of the irreversible chemisorption of water, formic acid and acetic acid on a thin amorphous aluminum oxide film, using inelastic tunneling spectroscopy. All of the tunnel junctions employed were Al-Al2O3-Pb junctions with the adsorbate on the Al2O3 surface between the Al2O3 and the Pb electrode. The results obtained include the finding that all Al2O3 surfaces prepared by oxidation of Al have free CH groups present on them.

Lewis, B. F.↗

Microspheres for laser velocimetry in high temperature wind tunnel

The introduction of non-intrusive measurement techniques in wind tunnel experimentation has been a turning point in error free data acquisition. Laser velocimetry has been progressively implemented and utilized in various wind tunnels; e.g. subsonic, transonic, and supersonic. The success of the laser velocimeter technique is based on an accurate measurement of scattered light by seeding particles introduced into the flow stream in the wind tunnel. Therefore, application of appropriate seeding particles will affect, to a large extent the acquired data. The seeding material used depends on the type of experiment being run. Among the seeding material for subsonic tunnel are kerosene, Kaolin, and polystyrene. Polystyrene is known to be the best because of being solid particles, having high index of refraction, capable of being made both spherical and monodisperse. However for high temperature wind tunnel testing seeding material must have an additional characteristic that is high melting point. Typically metal oxide powders such as Al2O3 with melting point 3660 F are used. The metal oxides are, however polydispersed, have a high density, and a tendency to form large agglomerate that does not closely follow the flow velocity. The addition of flame phase silica to metal oxide helps to break up the agglomerates, yet still results in a narrow band of polydispersed seeding. The less desirable utility of metal oxide in high temperature wind tunnels necessitates the search for a better alternative particle seeding which this paper addresses. The Laser Velocimetry (LV) characteristic of polystyrene makes it a prime candidate as a base material in achieving the high temperature particle seeding inexpensively. While polystyrene monodisperse seeding particle reported has been successful in a subsonic wind tunnel, it lacks the high melting point and thus is not practically usable in a high temperature wind tunnel. It is well known that rise in melting point of polystyrene can be achieved by a cross-linking technique. Since polystyrene already possesses all the desired characteristics for LV, to circumvent the low melting point, a cross-linking technique was investigated.

Ghorieshi, Anthony↗

Quantitative Analysis of Charge Injection and Discharging of Si Nanocrystals and Arrays by Electrostatic Force Microscopy

NASA requirements for computing and memory for microspacecraft emphasize high density, low power, small size, and radiation hardness. The distributed nature of storage elements in nanocrystal floating-gate memories leads to intrinsic fault tolerance and radiation hardness. Conventional floating-gate non-volatile memories are more susceptible to radiation damage. Nanocrystal-based memories also offer the possibility of faster, lower power operation. In the pursuit of filling these requirements, the following tasks have been accomplished: (1) Si nanocrystal charging has been accomplished with conducting-tip AFM; (2) Both individual nanocrystals on an oxide surface and nanocrystals formed by implantation have been charged; (3) Discharging is consistent with tunneling through a field-lowered oxide barrier; (4) Modeling of the response of the AFM to trapped charge has allowed estimation of the quantity of trapped charge; and (5) Initial attempts to fabricate competitive nanocrystal non-volatile memories have been extremely successful.

Bell, L. D.↗

Process dependent morphology of the Si/SiO2 interface measured with scanning tunneling microscopy

A new experimental technique to determine Si/SiO2 interface morphology is described. Thermal oxides of silicon are chemically removed, and the resulting surface topography is measured with scanning tunneling microscopy. Interfaces prepared by oxidation of Si (100) and (111) surfaces, followed by postoxidation anneal (POA) at different temperatures, have been characterized. Correlations between interface structure, chemistry, and electrical characteristics are described.

Hecht, Michael H.↗

Planar laser-induced fluorescence (PLIF) investigation of hypersonic flowfields in a Mach 10 wind tunnel

Planar laser-induced fluorescence (PLIF) of nitric oxide (NO) was used to visualize four different hypersonic flowfields in the NASA Langley Research Center 31-Inch Mach 10 Air wind tunnel. The four configurations were: (1) the wake flowfield of a fuselage-only X-33 lifting body, (2) flow over a flat plate containing a rectangular cavity, (3) flow over a 70deg blunted cone with a cylindrical afterbody, formerly studied by an AGARD working group, and (4) an Apollo-geometry entry capsule - relevant to the Crew Exploration Vehicle currently being developed by NASA. In all cases, NO was seeded into the flowfield through tubes inside or attached to the model sting and strut. PLIF was used to visualize the NO in the flowfield. In some cases pure NO was seeded into the flow while in other cases a 5% NO, 95% N2 mix was injected. Several parameters were varied including seeding method and location, seeding mass flow rate, model angle of attack and tunnel stagnation pressure, which varies the unit Reynolds number. The location of the laser sheet was as also varied to provide three dimensional flow information. Virtual Diagnostics Interface (ViDI) technology developed at NASA Langley was used to visualize the data sets in post processing. The measurements demonstrate some of the capabilities of the PLIF method for studying hypersonic flows.

Danehy, Paul M.↗

Manufacturing unique glasses in space

An air suspension melting technique is described for making glasses from substances which to date have been observed only in the crystalline condition. A laminar flow vertical wind tunnel was constructed for suspending oxide melts that were melted using the energy from a carbon dioxide laser beam. By this method it is possible to melt many high-melting-point materials without interaction between the melt and crucible material. In addition, space melting permits cooling to suppress crystal growth. If a sufficient amount of under cooling is accompanied by a sufficient increase in viscosity, crystallization will be avoided entirely and glass will result.

Happe, R. P.↗

1985 Annual Conference on Nuclear and Space Radiation Effects, 22nd, Monterey, CA, July 22-24, 1985, Proceedings

Basic mechanisms of radiation effects in structures and materials are discussed, taking into account the time dependence of interface state production, process dependent build-up of interface states in irradiated N-channel MOSFETs, bias annealing of radiation and bias induced positive charges in n- and p-type MOS capacitors, hole removal in thin-gate MOSFETs by tunneling, and activation energies of oxide charge recovery in SOS or SOI structures after an ionizing pulse. Other topics investigated are related to radiation effects in devices, radiation effects in integrated circuits, spacecraft charging and space radiation effects, single-event phenomena, hardness assurance and radiation sources, SGEMP/IEMP phenomena, EMP phenomena, and dosimetry and energy-dependent effects. Attention is given to a model of the plasma wake generated by a large object, gate charge collection and induced drain current in GaAs FETs, simulation of charge collection in a multilayer device, and time dependent dose enhancement effects on integrated circuit transient response mechanisms.

Jones, C. W.↗

An FPGA-Based Test-Bed for Reliability and Endurance Characterization of Non-Volatile Memory

Memory technologies are divided into two categories. The first category, nonvolatile memories, are traditionally used in read-only or read-mostly applications because of limited write endurance and slow write speed. These memories are derivatives of read only memory (ROM) technology, which includes erasable programmable ROM (EPROM), electrically-erasable programmable ROM (EEPROM), Flash, and more recent ferroelectric non-volatile memory technology. Nonvolatile memories are able to retain data in the absence of power. The second category, volatile memories, are random access memory (RAM) devices including SRAM and DRAM. Writing to these memories is fast and write endurance is unlimited, so they are most often used to store data that change frequently, but they cannot store data in the absence of power. Nonvolatile memory technologies with better future potential are FRAM, Chalcogenide, GMRAM, Tunneling MRAM, and Silicon-Oxide-Nitride-Oxide-Silicon (SONOS) EEPROM.

Rao, Vikram↗

Inelastic electron tunneling spectroscopy

Inelastic electron tunneling spectroscopy is a useful technique for the study of vibrational modes of molecules adsorbed on the surface of oxide layers in a metal-insulator-metal tunnel junction. The technique involves studying the effects of adsorbed molecules on the tunneling spectrum of such junctions. The data give useful information about the structure, bonding, and orientation of adsorbed molecules. One of the major advantages of inelastic electron tunneling spectroscopy is its sensitivity. It is capable of detecting on the order of 10 to the 10th molecules (a fraction of a monolayer) on a 1 sq mm junction. It has been successfully used in studies of catalysis, biology, trace impurity detection, and electronic excitations. Because of its high sensitivity, this technique shows great promise in the area of solid-state electronic chemical sensing.

Khanna, S. K.↗

Electron trapping in rad-hard RCA IC's irradiated with electrons and gamma rays

Enhanced electron trapping has been observed in n-channels of rad-hard CMOS devices due to electron and gamma-ray irradiation. Room-temperature annealing results in a positive shift in the threshold potential far beyond its initial value. The slope of the annealing curve immediately after irradiation was found to depend strongly on the gate bias applied during irradiation. Some dependence was also observed on the electron dose rate. No clear dependence on energy and shielding over a delidded device was observed. The threshold shift is probably due to electron trapping at the radiation-induced interface states and tunneling of electrons through the oxide-silicon energy barrier to fill the radiation-induced electron traps. A mathematical analysis, based on two parallel annealing kinetics, hole annealing and electron trapping, is applied to the data for various electron dose rates.

Danchenko, V.↗

Quantum Mechanical Study of Nanoscale MOSFET

The steady state characteristics of MOSFETS that are of practical Interest are the drive current, off-current, dope of drain current versus drain voltage, and threshold voltage. In this section, we show that quantum mechanical simulations yield significantly different results from drift-diffusion based methods. These differences arise because of the following quantum mechanical features: (I) polysilicon gate depletion in a manner opposite to the classical case (II) dependence of the resonant levels in the channel on the gate voltage, (III) tunneling of charge across the gate oxide and from source to drain, (IV) quasi-ballistic flow of electrons. Conclusions dI/dV versus V does not increase in a manner commensurate with the increase in number of subbands. - The increase in dI/dV with bias is much smaller then the increase in the number of subbands - a consequence of bragg reflection. Our calculations show an increase in transmission with length of contact, as seen in experiments. It is desirable for molecular electronics applications to have a small contact area, yet large coupling. In this case, the circumferential dependence of the nanotube wave function dictates: - Transmission in armchair tubes saturates around unity - Transmission in zigzag tubes saturates at two.

Svizhenko, Alexei↗

Effects of Heat Flux, Oxygen Concentration and Glass Fiber Volume Fraction on Pyrolysate Mass Flux from Composite Solids

Experimental work on the effects of heat flux, oxygen concentration and glass fiber volume fraction on pyrolysate mass flux from samples of polypropylene/glass fiber composite (PP/G) is underway. The research is conducted as part of a larger project to develop a test methodology for flammability of materials, particularly composites, in the microgravity and variable oxygen concentration environment of spacecraft and space structures. Samples of PP/G sized at 30x30x10 mm are flush mounted in a flow tunnel, which provides a flow of oxidizer over the surface of the samples at a fixed value of 1 m/s and oxygen concentrations varying between 18 and 30%. Each sample is exposed to a constant external radiant heat flux at a given value, which varies between tests from 10 to 24 kW/m2. Continuous sample mass loss and surface temperature measurements are recorded for each test. Some tests are conducted with an igniter and some are not. In the former case, the research goal is to quantify the critical mass flux at ignition for the various environmental and material conditions described above. The later case generates a wider range of mass flux rates than those seen prior to ignition, providing an opportunity to examine the protective effects of blowing on oxidative pyrolysis and heating of the surface. Graphs of surface temperature and sample mass loss vs. time for samples of 30% PPG at oxygen concentrations of 18 and 21% are presented in the figures below. These figures give a clear indication of the lower pyrolysis rate and extended time to ignition that accompany a lower oxygen concentration. Analysis of the mass flux rate at the time of ignition gives good repeatability but requires further work to provide a clear indication of mass flux trends accompanying changes in environmental and material properties.

Rich, D. B.↗

Effects of Heat Flux, Oxygen Concentration and Glass Fiber Volume Fraction on Pyrolysate Mass Flux from Composite Solids

Experimental work on the effects of heat flux, oxygen concentration and glass fiber volume fraction on pyrolysate mass flux from samples of polypropylene/glass fiber composite (PP/G) is underway. The research is conducted as part of a larger project to develop a test methodology for flammability of materials, particularly composites, in the microgravity and variable oxygen concentration environment of spacecraft and space structures. Samples of PP/G sized at 30 x 30 x 10 mm are flush mounted in a flow tunnel, which provides a flow of oxidizer over the surface of the samples at a fixed value of 1 m/s and oxygen concentrations varying between 18 and 30%. Each sample is exposed to a constant external radiant heat flux at a given value, which varies between tests from 10 to 24 kW/sq m. Continuous sample mass loss and surface temperature measurements are recorded for each test. Some tests are conducted with an igniter and some are not. In the former case, the research goal is to quantify the critical mass flux at ignition for the various environmental and material conditions described above. The later case generates a wider range of mass flux rates than those seen prior to ignition, providing an opportunity to examine the protective effects of blowing on oxidative pyrolysis and heating of the surface. Graphs of surface temperature and sample mass loss vs. time for samples of 30% PPG at oxygen concentrations of 18 and 21% are presented in the figures below. These figures give a clear indication of the lower pyrolysis rate and extended time to ignition that accompany a lower oxygen concentration. Analysis of the mass flux rate at the time of ignition gives good repeatability but requires further work to provide a clear indication of mass flux trends accompanying changes in environmental and material properties.

Rich, D. B.↗