Junction capacitance as a function of voltage for diffused p-n diodes with exponential doping gradients
Capacitance calculation for diffused p-n junction with exponential doping gradients
Been, J. F.↗
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Design and Growth of Novel Compounds for Radiation Sensors: Multinary Chalcogenides
Increasing threats of radiological weapons have revitalized the researches for low cost large volume -ray and neutron ray sensors In the past few years we have designed and grown ternary and quaternary lead and thallium chalcogenides and lead selenoiodides for detectors to meet these challenges. These materials are congruent, can be tailored to enhance the parameters required for radiation sensors. In addition, this class of compounds can be grown by Bridgman method which promises for large volume productions. We have single crystals of several compounds from the melt including Tl3AsSe3, Tl3AsSe3-xSx, TlGaSe2, AgGaGe3Se8, AgxLi1-xAgGaGe3Se8 and PbTlI5-x Sex compounds. Experimental studies indicate that these have very low absorption coefficient, low defect density and can be fabricated in any shape and sizes. These crystals do not require post growth annealing and do not show any second phase precipitates when processed for electrode bonding and other fabrication steps. In this paper we report purification, growth and fabrication of large Tl3AsSe3 (TAS) crystals. We observed that TAS crystals grown by using further purification of as supplied high purity source materials followed by directionally solidified charge showed higher resistivity than previously reported values. TAS also showed constant value as the function of voltage. A low thermal gradient and high purity source material were used to reduce thermal stresses in large crystals. By improving the purification of the as supplied source materials very high quality thallium, selenium and arsenic was achieved for preparing stoichiometric Tl3AsSe3 compound. Low gradient (<20K/cm) and slow growth rate (1-2 cm/day) produced crystals with reduced stress. Crystals did not show any micro cracking during fabrication of crystals grown with high purity and at low thermal gradient. Since thallium is a major component and very sensitive to surface oxidation, removal of surface and bulk oxides is very important. Intentional increase in the growth rate from 1cm/day to higher speed (>5cm/day) showed very different morphologies on the surface of the crystals. Electrical resistivity was one order of magnitude higher than previously reported value and it was observed to be constant as the function of frequency.
Singh, N. B.↗
NASCAP modelling of high-voltage power system interactions with space charged-particle environments
A simple space power system operating in geosynchronous orbit was analyzed. This system consisted of two solar array wings and a central body. Each solar array wing was considered to be divided into three regions operating at 2000 volts. The center body was considered to be an electrical ground with the array voltages both positive and negative relative to ground. The system was analyzed for both a normal environment and a moderate geomagnetic substorm environment. Initial results indicate a high probability of arcing at the interconnects on the negative operating voltage wing. The dielectric strength of the substrate may be exceeded giving rise to breakdown in the bulk of the material. The geomagnetic substorm did not seem to increase the electrical gradients at the interconnects on the negative operating voltage wing but did increase the gradients on the positive operating voltage wing which could result in increased coupling current losses.
Stevens, N. J.↗
On the control of flexible structures by applied thermal gradients
Thermal, elastic, and feedback analyses are applied to the case of a beam with a distributed thermal actuator. The actuator is capable of producing a thermal gradient across the section of the beam. One candidate for such an actuator uses the Peltier effect, which appears in certain semiconductors. These devices act as heat pumps when a voltage is applied, causing a temperature gradient. It is shown that the thermal gradients can induce deflection in the beam. If the thermal gradients are applied in the proper sense to a vibrating beam, it is possible to increase the vibration damping exhibited by the structure. Experimental results are given for a cantilever beam, whose first vibrational mode damping ratio was increased from 0.81 to 7.4 percent with a simple lead compensation.
Edberg, D. L.↗
Control of flexible structures by applied thermal gradients
Thermal, elastic, and feedback analyses are applied to the case of a beam with a distributed thermal actuator. The actuator is capable of producing a thermal gradient across the section of the beam. One candidate for such an actuator uses the Peltier effect, which appears in certain semiconductors. These devices act as heat pumps when a voltage is applied, causing a temperature gradient. It is shown that the thermal gradients can induce deflection in the beam. If the thermal gradients are applied in the proper sense to a vibrating beam, it is possible to increase the vibration damping exhibited by the structure. Experimental results are given for a cantilever beam, whose first vibrational mode damping ratio was increased from 0.81 to 7.4 percent with simple lead compensation.
Edberg, Donald L.↗
Measurement of Seebeck coefficient using a large thermal gradient
The integral method of measuring the Seebeck voltage, V(T), has been applied to short rod-shaped samples. In the present method, one end of the sample is held at a fixed temperature and the other end is automatically varied through a temperature T range of interest, up to a maximum temperature of 1000 C. The Seebeck coefficient is then obtained from the slope of the V(T) vs T curve. The method offers simplicity of sample handling and minimal operator involvement.
Wood, C.↗
Effect of Head-Down Bed Rest and Artificial Gravity Countermeasure on Cardiac Autonomic and Advanced Electrocardiographic Function
To study the effects of 21 days of head-down bed rest (HDBR), with versus without an artificial gravity (AG) countermeasure, on cardiac autonomic and advanced electrocardiographic function. Fourteen healthy men participated in the study: seven experienced 21 days of HDBR alone ("HDBR controls") and seven the same degree and duration of HDBR but with approximately 1hr daily short-arm centrifugation as an AG countermeasure ("AG-treated"). Five minute supine high-fidelity 12-lead ECGs were obtained in all subjects: 1) 4 days before HDBR; 2) on the last day of HDBR; and 3) 7 days after HDBR. Besides conventional 12-lead ECG intervals and voltages, all of the following advanced ECG parameters were studied: 1) both stochastic (time and frequency domain) and deterministic heart rate variability (HRV); 2) beat-to-beat QT interval variability (QTV); 3) T-wave morphology, including signal-averaged T-wave residua (TWR) and principal component analysis ratios; 4) other SAECG-related parameters including high frequency QRS ECG and late potentials; and 5) several advanced ECG estimates of left ventricular (LV) mass. The most important results by repeated measures ANOVA were that: 1) Heart rates, Bazett-corrected QTc intervals, TWR, LF/HF power and the alpha 1 of HRV were significantly increased in both groups (i.e., by HDBR), but with no relevant HDBR*group differences; 2) All purely "vagally-mediated" parameters of HRV (e.g., RMSSD, HF power, Poincare SD1, etc.), PR intervals, and also several parameters of LV mass (Cornell and Sokolow-Lyon voltages, spatial ventricular activation times, ventricular gradients) were all significantly decreased in both groups (i.e., by HDBR), but again with no relevant HDBR*group differences); 3) All "generalized" or "vagal plus sympathetic" parameters of stochastic HRV (i.e., SDNN, total power, LF power) were significantly more decreased in the AG-treated group than in the HDBR-only group (i.e., here there was a relevant HDBR*group difference); and 4) QTV index was also significantly more changed (increased) in the AG-treated group than in the HDBR-only group, although this was clearly due to a greater decrease in generalized HRV and not to a greater increase in QTV proper because there was no relevant HDBR*group effect for either the SDNN or the RMSSD of QTV. Brief daily AG treatment by short-arm centrifuge during each of 21 days of HDBR does not appear to protect against HDBR-related losses of cardiac autonomic function or of LV mass as estimated by ECG.
Schlegel, T. T.↗
Impact of Thermal Gradients on Wind Tunnel Force Measurements
In a wind tunnel facility, the direct measurement of forces and moments induced on the model are performed by a force measurement balance. The measurement balance is a precision-machined device that has strain gages at strategic locations to measure the strain (i.e., deformations) due to applied forces and moments. The strain gages convert the strain (and hence the applied force) to an electrical voltage that is measured by external meters. Thermal gradients can complicate the process, however. Thermal gradients on the balance cause differential expansion (or contraction) of various parts of the balance that induce a strain that is detected by the strain gages and is indistinguishable from an external applied force. The thermal gradients can result when testing is done at elevated temperatures or at cryogenic temperatures such as at the National Transonic Facility (NTF) at NASA Langley Research Center (LaRC).
Hereford, James↗
Effect of Oxide Interface Roughness on the Threshold Voltage Fluctuations in Decanano MOSFETs with Ultrathin Gate Oxides
In this paper we use the Density Gradient (DG) simulation approach to study, in 3-D, the effect of local oxide thickness fluctuations on the threshold voltage of decanano MOSFETs on a statistical scale. The random 2-D surfaces used to represent the interface are constructed using the standard assumptions for the auto-correlation function of the interface. The importance of the Quantum Mechanical effects when studying oxide thickness fluctuations are illustrated in several simulation examples.
Asenov, Asen↗
Measuring Inhomogeneities In Thermocouple Wires
Spools rotated to pull thermocouple wires through liquid nitrogen, while output voltage of thermocouple recorded on strip chart. Wires exposed to severe temperature gradients, amounting to overall change of 200 degrees C, where they enter and leave liquid nitrogen. If wires homogeneous, net output voltage zero. If inhomogeneity passes through liquid-nitrogen/air interface, resulting deviation of output voltage from zero seen immediately on strip chart. If inhomogeneity greater than allowable, reels stopped temporarily so inhomogeneity tagged before wound onto takeup reel.
Burkett, Cecil G., Jr.↗
Research, Development and Fabrication of Lithium Solar Cells
This report continues studies on cells made with low temperature (<400degC) single-cycle, lithium diffusion schedules. Measurements of concentration of lithium at the back surface showed that C(sub S) changes with time consisting of a build-up to a maximum value (above 10(exp 17) cm(exp -3)) with gradual decrease at longer diffusion times. Using the estimated C(sub S) values, theoretical lithium profiles were calculated. The calculated concentration near the PN junction was higher than those measured by the capacitance voltage (C-V) technique. The calculated concentration gradients were one-seventh of those measured by C-V methods. Both the concentration and its gradient were proportional to C(sub S). Estimates of C(sub S) obtained by extrapolating from C-V measured values of concentration and gradient near the PN junction, showed a decrease in C(sub S) for longer diffusion times. This fact supported the trend observed in Shipment C-13, where,, at longer times, the spread in values of V(sub oc), lithium concentration, and gradient became greater. The general conclusion was that the I-V characteristics were well controlled, with good cell output, but for longer diffusion times the lithium concentration gradient could have wider spread. The work described has led to greater insight into the lithium distribution dependence on the surface conditions. The surface conditions could be changed by varying the method used to apply lithium. Vacuum evaporation of lithium shows promise, and another exhaustive test of this method is in progress. Shipment C-13 is summarized, and the succeeding lots (C-14, C-15) are described. It is felt that improved monitoring of cell properties is at hand, and that the control of cell fabrication processes has advanced to where the effects of subtle differences in lithium distribution can now be seen. Evaluation is continuing on the best method to scale up the fabrication steps. A different sequence of fabrication is planned for Shipments C-14 and C-15.
Iles, Peter A.↗
Development of the data base for a degradation model of a selenide RTG
The paper is concerned with the evaluation of the materials used in a selenide radioisotope thermoelectric generator (RTG). These materials are composed of n-type gadolinium selenide and n-type copper selenide. A three-fold evaluation approach is being used: (1) the study of the rate of change of the thermal conductivity of the material, (2) the investigation of the long-term stability of the material's Seebeck voltage and electrical resistivity under current and temperature gradient conditions, and (3) determination of the physical behavior and compatibility of the material with surrounding insulation at elevated temperatures. Programmatically, the third category of characteristic evaluation is being emphasized.
Stapfer, G.↗
Epitaxial silicon solar cells
P+/p/n/n+ epitaxial silicon solar-cell structures were fabricated with the n-base region intentionally graded over 2 orders of magnitude in a thickness of 35 microns. Solar cells made from these layers exhibited near-ideal I-V characteristics in the practical operating range, with an open-circuit voltage of 636 mV, fill factor of 0.79, and AM1 efficiency of 12.6%. A similar epitaxial structure containing no gradient in the n-base showed good solar-cell performance but lower open-circuit voltage (603 mV).
Daiello, R. V.↗
The drift field model applied to the lithium-containing silicon solar cell
The drift field model used by Wolf (1963) to calculate the short-circuit current was extended to permit calculations of the open-circuit voltage and the maximum power under conditions of illumination of either tungsten (2800 C) source or air mass zero sunlight. Voltages were calculated using an expression for the drift field diode saturation current. The model, applied to the oxygen-rich (C-13 group) lithium solar cells, was used to calculate the pre- and post-electron bombardment trends of the open-circuit voltage, maximum power, and short-circuit current for lithium gradients in the range from 10 to the 18th power to 10 to the 19th power Li/cm to the 4th power. Diffusion length degradation and carrier removal effects were sufficient to predict the cell performance up to 3 x 10 to the 14th electrons per sq cm. Beyond this fluence it was necessary to include drift field removal effects.
Godlewski, M. P.↗
Increase in the Random Dopant Induced Threshold Fluctuations and Lowering in Sub 100 nm MOSFETs Due to Quantum Effects: A 3-D Density-Gradient Simulation Study
In this paper we present a detailed simulation study of the influence of quantum mechanical effects in the inversion layer on random dopant induced threshold voltage fluctuations and lowering in sub 100 nm MOSFETs. The simulations have been performed using a 3-D implementation of the density gradient (DG) formalism incorporated in our established 3-D atomistic simulation approach. This results in a self-consistent 3-D quantum mechanical picture, which implies not only the vertical inversion layer quantisation but also the lateral confinement effects related to current filamentation in the 'valleys' of the random potential fluctuations. We have shown that the net result of including quantum mechanical effects, while considering statistical dopant fluctuations, is an increase in both threshold voltage fluctuations and lowering. At the same time, the random dopant induced threshold voltage lowering partially compensates for the quantum mechanical threshold voltage shift in aggressively scaled MOSFETs with ultrathin gate oxides.
Asenov, Asen↗
TIGER: Development of Thermal Gradient Compensation Algorithms and Techniques
In a wind tunnel facility, the direct measurement of forces and moments induced on the model are performed by a force measurement balance. The measurement balance is a precision-machined device that has strain gages at strategic locations to measure the strain (i.e., deformations) due to applied forces and moments. The strain gages convert the strain (and hence the applied force) to an electrical voltage that is measured by external instruments. To address the problem of thermal gradients on the force measurement balance NASA-LaRC has initiated a research program called TIGER - Thermally-Induced Gradients Effects Research. The ultimate goals of the TIGER program are to: (a) understand the physics of the thermally-induced strain and its subsequent impact on load measurements and (b) develop a robust thermal gradient compensation technique. This paper will discuss the impact of thermal gradients on force measurement balances, specific aspects of the TIGER program (the design of a special-purpose balance, data acquisition and data analysis challenges), and give an overall summary.
Hereford, James↗
The TSS-1R Electrodynamic Tether Experiment: Scientific and Technological Results
The Tethered Satellite System (TSS) program was designed to provide the opportunity to explore certain space plasma-electrodynamic processes (associated with high-voltage bodies and electrical currents in space) and the orbital mechanics of a gravity-gradient stabilized system of two satellites linked by a long conducting tether. A unique data set was obtained during the TSS-1 R mission in which the tether emf and current reached values in excess of 3500 volts and 1 amp, respectively. The insight this has allowed into the current collection process and the physics of high-voltage plasma sheaths is significant. Previous theoretical models of current collection were electro-static assuming that the orbital motion of the system, which is highly sub-sonic with respect to electron thermal motion, was unimportant. This may still be acceptable for the case of relatively slow-moving sounding rockets. However, the TSS-1 R results show that motion relative to the plasma does affect current collection and must be accounted for in orbiting systems.
Stone, Nobie H.↗
Hierarchical Statistical 3D ' Atomistic' Simulation of Decanano MOSFETs: Drift-Diffusion, Hydrodynamic and Quantum Mechanical Approaches
When MOSFETs are scaled to deep submicron dimensions the discreteness and randomness of the dopant charges in the channel region introduces significant fluctuations in the device characteristics. This effect, predicted 20 year ago, has been confirmed experimentally and in simulation studies. The impact of the fluctuations on the functionality, yield, and reliability of the corresponding systems shifts the paradigm of the numerical device simulation. It becomes insufficient to simulate only one device representing one macroscopical design in a continuous charge approximation. An ensemble of macroscopically identical but microscopically different devices has to be characterized by simulation of statistically significant samples. The aims of the numerical simulations shift from predicting the characteristics of a single device with continuous doping towards estimating the mean values and the standard deviations of basic design parameters such as threshold voltage, subthreshold slope, transconductance, drive current, etc. for the whole ensemble of 'atomistically' different devices in the system. It has to be pointed out that even the mean values obtained from 'atomistic' simulations are not identical to the values obtained from continuous doping simulations. In this paper we present a hierarchical approach to the 'atomistic' simulation of aggressively scaled decanano MOSFETs. A full scale 3D drift-diffusion'atomostic' simulation approach is first described and used for verification of the more economical, but also more restricted, options. To reduce the processor time and memory requirements at high drain voltage we have developed a self-consistent option based on a thin slab solution of the current continuity equation only in the channel region. This is coupled to the Poisson's equation solution in the whole simulation domain in the Gummel iteration cycles. The accuracy of this approach is investigated in comparison with the full self-consistent solution. At low drain voltage only single solution of the nonlinear Poisson equation is sufficient to extract the current with satisfactory accuracy. A pilot version of a hydrodynamic 'atomistic' simulator has been developed in order to study the effect of the nonequilibrium, non local transport in decanano MOSFETs on the random dopant induced current fluctuations. For the first time we have also applied the density gradient approach in 3D to investigate the effect of the quantum confinement on the threshold voltage fluctuations. The developed 'atomistic' simulation techniques have been applied to study various fluctuation resistant MOSFET architectures including epitaxial and delta doped devices.
Asenov, Asen↗