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Cadmium selenide-zinc selenide film is used as a thin film semiconductor rectifier. The film is vapor-deposited in a controlled concentration gradient into a glass substrate to form the required junctions between vapor-deposited gold electrodes.
High-efficiency Al(x)Ga(1-x)As/GaAs heteroface solar concentrator cells have been developed for both space and terrestrial applications. The cells, which were grown using metalorganic chemical vapor deposition, have been fabricated in both the p-n and n-p configurations. Magnesium and zinc are used as p-type dopants, and Se is used as the n-type dopant. The space cells, which are designed for use in a Cassegrainian concentrator operating at 100 suns, AMO, have a circular illuminated area 4 mm in diameter on a 5 mm x 5 mm cell. These cells have exhibited flash-tested efficiencies as high as 23.6 percent at 28 C and 21.6 percent at 80 C. The terrestrial cells have a circular illuminated area 0.2 inches in diameter and are intended for use in a module which operates at 940 suns, AM1.5. These cells have shown a peak efficiency of 26 percent at 753 suns and over 25 percent at greater than 1000 suns.
High efficiency Al sub x Ga sub 1-x As/GaAs heteroface solar concentrator cells have been developed for space applications. The cells, which were grown using metalorganic chemical vapor deposition (MOCVD), have been fabricated in both the p-n and n-p configurations. Magnesium and zinc are used as the p-type dopants, and Se is used as the n-type dopant. The space cells, which are designed for use in a Cassegrainian concentrator operating at 100 suns, AMO, have a circular illuminated area 4 mm in diameter on a 5 mm by 5 mm cell. These cells have exhibited flash-tested efficiencies as high as 23.6 percent at 28 C and 21.6 percent at 80 C.
The launch facilities at the Kennedy Space Center (KSC) are located approximately 1000 feet from the Atlantic Ocean where they are exposed to salt deposits, high humidity, high UV degradation, and acidic exhaust from solid rocket boosters. These assets are constructed from carbon steel, which requires a suitable coating to provide long-term protection to reduce corrosion and its associated costs. While currently used coating systems provide excellent corrosion control performance, they are subject to occupational, safety, and environmental regulations at the Federal and State levels that limit their use. Many contain high volatile organic compounds (VOCs), hazardous air pollutants, and other hazardous materials. Hazardous waste from coating operations include vacuum filters, zinc dust, hazardous paint related material, and solid paint. There are also worker safety issues such as exposure to solvents and isocyanates. To address these issues, top-coated thermal spray zinc coating systems were investigated as a promising environmentally friendly corrosion protection for carbon steel in an acidic launch environment. Additional benefits of the combined coating system include a long service life, cathodic protection to the substrate, no volatile contaminants, and high service temperatures. This paper reports the results of a performance based study to evaluate low VOC topcoats (for thermal spray zinc coatings) on carbon steel for use in a space launch environment.
A process for applying blocking contacts on an n-type CdZnTe specimen includes cleaning the CdZnTe specimen; etching the CdZnTe specimen; chemically surface treating the CdZnTe specimen; and depositing blocking metal on at least one of a cathode surface and an anode surface of the CdZnTe specimen.
A pulsed metallic-plasma generator is described which utilizes a vacuum arc as the plasma source. The arc is initiated on the surface of a consumable cathode which can be any electrically conductive material. Ignition is accomplished by using a current pulse to vaporize a portion of a conductive film on the surface of an insulator separating the cathode from the ignition electrode. The film is regenerated during the ensuing arc. Over 100 million ignition cycles have been accomplished by using four 0.125-in. diameter zinc cathodes operating in parallel and high-density aluminum-oxide insulators. Among the applications being investigated for the generator are metal deposition, vacuum pumping, electric propulsion, and high-power dc arc interruption.
We have been working on the development of thin film photovoltaic solar cell materials that can be produced entirely by wet chemical methods on low-cost flexible substrates. P-type copper indium diselenide (CIS) absorber layers have been deposited via electrochemical deposition. Similar techniques have also allowed us to incorporate both Ga and S into the CIS structure, in order to increase its optical bandgap. The ability to deposit similar absorber layers with a variety of bandgaps is essential to our efforts to develop a multi-junction thin-film solar cell. Chemical bath deposition methods were used to deposit a cadmium sulfide (CdS) buffer layers on our CIS-based absorber layers. Window contacts were made to these CdS/CIS junctions by the electrodeposition of zinc oxide (ZnO). Structural and elemental determinations of the individual ZnO, CdS and CIS-based films via transmission spectroscopy, x-ray diffraction, x-ray photoelectron spectroscopy and energy dispersive spectroscopy will be presented. The electrical characterization of the resulting devices will be discussed.
A high temperature thin film strain gage sensor capable of functioning at temperatures above 1400.degree. C. The sensor contains a substrate, a nanocomposite film comprised of an indium tin oxide alloy, zinc oxide doped with alumina or other oxide semiconductor and a refractory metal selected from the group consisting of Pt, Pd, Rh, Ni, W, Ir, NiCrAlY and NiCoCrAlY deposited onto the substrate to form an active strain element. The strain element being responsive to an applied force.
Electroprocessing which is concerned with fluid dynamics of the electroreduction process to determine how it may be modified to improve the quality of the deposit was studied. Experimental techniques are used in this research. These techniques include laser Schlieren photography, laser Doppler velocimetry, and frequency spectrum analysis. Projects involve fluid flow studies of zinc plating in aqueous and molten salt electrolytes, study of cell design for magnesium chlorides electrolysis, digital signal analysis of manganese electrodeposition in molten chlorides, and electroplating of molybdenum from low melting salts. It is anticipated that the use of refractory metals as constructed materials in engineering will increase. Their electrodeposition from molten salt electrolytes is important in the extraction metallurgy of refractory metals.
As a novel oxide semiconductor material, ZnO is interesting for use in many applications. For fabricating electronic devices, it is important to have n- and p- type ZnO materials. Arsenic has been proven to be one of the p-type dopants for ZnO materials. However, information in studying the ZnAsO ternary compound films has been scarce. In order to investigate the morphology, structure and electrical properties of ZnAsO ternary compounds, ZnO:As films have been synthesized using off-axis sputtering deposition on various substrates including (100) Si and (0001) sapphire crystals. Films are grown under various growth conditions. ZnO:As targets with the atomic weight ratios of arsenic to zinc from 0.01 to 0.10 are used for film synthesis. The growth temperatures and pressures range from 350 to 550C and 5 to 150 mTorr, respectively. Argon to oxygen gas ratio for film growth is varied to examine the film quality as well. Film surface morphology, crystal structure, and compositions, are characterized using atomic force microscopy, x-ray diffraction, and energy dispersive spectroscopy, respectively. The compositions of target material and ZnO:As films grown under various conditions are then assessed. The electrical properties were also measured. The detail of these measurements will be discussed in the presentation.
The source of the asymmetry in the dislocation morphology exhibited in the epitaxial growth of compound semiconductors on (100) was investigated. A thickness wedge of p- and n-type GaAs(0.95)P(0.05) was grown on GaAs by metalorganic chemical vapor deposition, and the effect of misorientation on the resolved shear stress for each slip system was calculated and eliminated as the source of the asymmetry. Another potential source of asymmetry, the thickness gradient, was also eliminated. Results show that the substrate misorientation and the thickness gradient do not significantly contribute to the asymmetry and that the dominant contributor to the asymmetry of misfit dislocations in the (001) epitaxial interface can be attributed to the differences in the Peierls barriers between the two types of dilocations in GaAsP/GaAs.
Technologies for protecting Space Station surfaces from degradation caused by atomic oxygen are discussed, stressing protection of the power system surfaces. The Space Station power system is described and research concerning the solar array surfaces and radiator surfaces is examined. The possibility of coating the solar array sufaces with a sputter deposited thin film of silicon oxide containing small concentrations of polytetrafluoroethylene is presented. Hexamethyldisiloxane coating for these surfaces is also considered. For the radiator surfaces, possible coatings include silver teflon thermal coating and zinc orthotitanate.
A miniplant, consisting of a 5 cm-diameter fluidized-bed reactor and associated equipment was used to study the deposition parameters, temperature, reactant composition, seed particle size, bed depth, reactant throughput, and methods of reactant introduction. It was confirmed that the permissible range of fluidized-bed temperature was limited at the lower end by zinc condensation (918 C) and at higher temperatures by rapidly decreasing conversion efficiency. Use of a graded bed temperature was shown to increase the conversion efficiency over that obtained in an isothermal bed. Other aspects of the process such as the condensation and fused-salt electrolysis of the ZnCl2 by-product for recycle of zinc and chlorine were studied to provide information required for design of a 50 MT/year experimental facility. In view of the favorable technical and economic indications obtained, it was recommended that construction and operation of the 50 MT/year experimental facility be implemented.
An X-ray defraction (XRD) characterization method for sigma=3 twin defects in cubic semiconductor (100) wafers includes a concentration measurement method and a wafer mapping method for any cubic tetrahedral semiconductor wafers including GaAs (100) wafers and Si (100) wafers. The methods use the cubic semiconductor's (004) pole figure in order to detect sigma=3/{111} twin defects. The XRD methods are applicable to any (100) wafers of tetrahedral cubic semiconductors in the diamond structure (Si, Ge, C) and cubic zinc-blend structure (InP, InGaAs, CdTe, ZnSe, and so on) with various growth methods such as Liquid Encapsulated Czochralski (LEC) growth, Molecular Beam Epitaxy (MBE), Organometallic Vapor Phase Epitaxy (OMVPE), Czochralski growth and Metal Organic Chemical Vapor Deposition (MOCVD) growth.
A Process Development Unit (PDU), which consisted of the four major units of the process, was designed, installed, and experimentally operated. The PDU was sized to 50MT/Yr. The deposition took place in a fluidized bed reactor. As a consequences of the experiments, improvements in the design an operation of these units were undertaken and their experimental limitations were partially established. A parallel program of experimental work demonstrated that Zinc can be vaporized for introduction into the fluidized bed reactor, by direct induction-coupled r.f. energy. Residual zinc in the product can be removed by heat treatment below the melting point of silicon. Current efficiencies of 94 percent and above, and power efficiencies around 40 percent are achievable in the laboratory-scale electrolysis of ZnCl2.
The mineralogy and isotopic composition of sulfur found in hydrothermal deposits associated with five groups of vents along the ridge axis of the East Pacific Rise near 21 deg N latitude are investigated. Solid samples of mixed sulfides and sulfates from mounds, chimneys and the surrounding sediment as well as fresh basaltic glass were examined with a portable X-ray fluorescence spectrometer and by scanning electron microscopy, X-ray diffractometry, and electron microprobe analysis. For the three vents of exit temperature close to 350 C, the chimneys are found to be rich in copper sulfides, while for those of temperatures around 300 C, zinc sulfide is found to predominate. The major sulfides found in the chimneys include wurtzite, chalcopyrite, pyrite and cubanite, with anhydrite the dominant sulfate. Significant mineralogical differences are found between active and inactive vents. The isotopic composition of sulfur in anhydrites from active vents is observed to be close to that of sea water and consistent with a derivation from sea water sulfate. The isotopic composition of sulfur in the sulfide minerals is explained in terms of precipitation from solutions with reduced sulfur derived from basalts or basaltic magmas, and sea water sulfate. Finally, the deposits are interpreted as the results of the mixing of H2S-dominated hydrothermal fluids with cold sea water near the sea floor.
The present study seeks to explain the poor quality of solid electrodeposits in molten salts through a consideration of the effects of fluid flow of the electrolyte. Transparent cells allow observation of electrolyte circulation by a laser schlieren optical technique during the electrodeposition of solid zinc from the molten salt electrolyte, ZnCl2 - LiCl-KCl. Experimental variables are current, density, electrolyte composition, and cell geometry. Based on the results of earlier electrodeposition studies as well as reports in the literature, these parameters are identified as having the primary influence on cell performance and deposit quality. Experiments are conducted to measure the fluid flow patterns and the electrochemical cell characteristics, and to correlate this information with the morphology of the solid electrodeposit produced. Specifically, cell voltage, cell current, characteristic time for dendrite evolution, and dendrite growth directions are noted. Their relationship to electrolyte flow patterns and the morphology of the resulting electrodeposit are derived. Results to date indicate that laser schlieren imaging is capable of revealing fluid flow patterns in a molten salt electrolyte.
Following the 1976 Toxic Substances Control Act ban on their manufacture, PCBs remain an environmental threat. PCBs are known to bio-accumulate and concentrate in fatty tissues. Further complications arise from the potential for contamination of commercial mixtures with other more toxic chlorinated compounds such as polychlorinated dibenzodioxins (PCDDs) and polychlorinated dibenzofurans (PCDFs). Until recently, only one option was available for the treatment of PCB-contaminated materials: incineration. This may prove to be more detrimental to the environment than the PCBs themselves due to the potential for formation of PCDDs. Metals have been used for the past ten years for the remediation of halogenated solvents and other contaminants in the environment; however, zero-valent metals alone do not possess the activity required to dehalogenate PCBs. Palladium has been shown to act as an excellent catalyst for the dechlorination of PCBs with active metals. This invention is a method for the production of a palladium/magnesium bimetal capable of dechlorinating PCBs using mechanical milling/mechanical alloying. Other base metals and catalysts may also be alloyed together (e.g., nickel or zinc) to create a similarly functioning catalyst system. Several bimetal catalyst systems currently can be used for processes such as hydrogen peroxide synthesis, oxidation of ethane, selective oxidation, hydrogenation, and production of syngas for further conversion to clean fuels. The processes for making these bimetal catalysts often involve vapor deposition. This technology provides an alternative to vapor deposition that may provide equally active catalysts. A hydrogenation catalyst including a base material coated with a catalytic metal is made using mechanical milling techniques. The hydrogenation catalysts are used as an excellent catalyst for the dehalogenation of contaminated compounds and the remediation of other industrial compounds. The mechanical milling technique is simpler and cheaper than previously used methods for producing hydrogenation catalysts. Preferably, the hydrogenation catalyst is a bimetallic particle formed from a zero-valent iron or zero-valent magnesium particle coated with palladium that is impregnated onto a high-surface-area graphite support. The zero-valent metal particles should be microscale or nanoscale zero-valent magnesium or zero-valent iron particles. Other zero-valent metal particles and combinations may be used. Additionally, the base material may be selected from a variety of minerals including, but not limited to, alumina and zeolites. The catalytic metal is preferably selected from the group consisting of noble metals and transition metals, preferably palladium. The mechanical milling process includes milling the base material with a catalytic metal impregnated into a high-surface-area support to form the hydrogenation catalyst. In a preferred mechanical milling process, a zero-valent metal particle is provided as the base material, preferably having a particle size of less than about 10 microns, preferably 0.1 to 10 microns or smaller, prior to milling. The catalytic metal is supported on a conductive carbon support structure prior to milling. For example, palladium may be impregnated on a graphite support. Other support structures such as semiconductive metal oxides may also be used.