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At least 541 records · Page 30

System and Method for Monitoring Piezoelectric Material Performance

A system and method are provided for monitoring performance capacity of a piezoelectric material that may form part of an actuator or sensor device. A switch is used to selectively electrically couple an inductor to the piezoelectric material to form an inductor-capacitor circuit. Resonance is induced in the inductor-capacitor circuit when the switch is operated to create the circuit. The resonance of the inductor-capacitor circuit is monitored with the frequency of the resonance being indicative of performance capacity of the device's piezoelectric material.

Moses, Robert W.↗

Wide-Range Temperature Sensors with High-Level Pulse Train Output

Two types of temperature sensors have been developed for wide-range temperature applications. The two sensors measure temperature in the range of -190 to +200 C and utilize a thin-film platinum RTD (resistance temperature detector) as the temperature-sensing element. Other parts used in the fabrication of these sensors include NPO (negative-positive- zero) type ceramic capacitors for timing, thermally-stable film or wirewound resistors, and high-temperature circuit boards and solder. The first type of temperature sensor is a relaxation oscillator circuit using an SOI (silicon-on-insulator) operational amplifier as a comparator. The output is a pulse train with a period that is roughly proportional to the temperature being measured. The voltage level of the pulse train is high-level, for example 10 V. The high-level output makes the sensor less sensitive to noise or electromagnetic interference. The output can be read by a frequency or period meter and then converted into a temperature reading. The second type of temperature sensor is made up of various types of multivibrator circuits using an SOI type 555 timer and the passive components mentioned above. Three configurations have been developed that were based on the technique of charging and discharging a capacitor through a resistive element to create a train of pulses governed by the capacitor-resistor time constant. Both types of sensors, which operated successfully over the wide temperature range, have potential use in extreme temperature environments including jet engines and space exploration missions.

Hammoud, Ahmad↗

Number Codes Readable by Magnetic-Field-Response Recorders

A method of encoding and reading numbers incorporates some of the features of conventional optical bar coding and radio-frequency identification (RFID) tagging, but overcomes some of the disadvantages of both: (1) Unlike in conventional optical bar coding, numbers can be read without having a line of sight to a tag; and (2) the tag circuitry is simpler than the circuitry used in conventional RFID. The method is based largely on the principles described in Magnetic-Field-Response Measurement-Acquisition System (LAR-16908), NASA Tech Briefs, Vol. 30, No. 6 (June 2006) page 28. To recapitulate: A noncontact system includes a monitoring unit that acquires measurements from sensors at distances of the order of several meters. Each sensor is a passive radio-frequency (RF) resonant circuit in the form of one or more inductor(s) and capacitor(s). The monitoring unit a handheld unit denoted a magnetic field response recorder (MFRR) generates an RF magnetic field that excites oscillations in the resonant circuits resulting in the sensors responding with their own radiated magnetic field. The resonance frequency of each sensor is made to differ significantly from that of the other sensors to facilitate distinction among the responses of different sensors. The MFRR measures selected aspects of the sensor responses: in a typical application, the sensors are designed so that their resonance frequencies vary somewhat with the sensed physical quantities and, accordingly, the MFRR measures the resonance frequencies and variations thereof as indications of those quantities. In the present method, the resonance circuits are not used as sensors. Instead, the circuits are made to resonate at fixed frequencies that correspond to digits to be encoded. The number-encoding scheme is best explained by means of examples in which each resonant circuit consists of a spiral trace inductor electrically connected to a set of parallel-connected capacitors in the form of interdigitated electrode pairs (see figure). The inductor and capacitor(s) in each resonant circuit can be fabricated as a patterned thin metal film by means of established metal-deposition and -patterning techniques. The capacitance and, hence, the resonance frequency, depends on the number of interdigitated electrodes connected to the inductor. In a similar manner, sets of electrodes could be used.

Woodard, Stanley E.↗

Increasing Linear Dynamic Range of a CMOS Image Sensor

A generic design and a corresponding operating sequence have been developed for increasing the linear-response dynamic range of a complementary metal oxide/semiconductor (CMOS) image sensor. The design provides for linear calibrated dual-gain pixels that operate at high gain at a low signal level and at low gain at a signal level above a preset threshold. Unlike most prior designs for increasing dynamic range of an image sensor, this design does not entail any increase in noise (including fixed-pattern noise), decrease in responsivity or linearity, or degradation of photometric calibration. The figure is a simplified schematic diagram showing the circuit of one pixel and pertinent parts of its column readout circuitry. The conventional part of the pixel circuit includes a photodiode having a small capacitance, CD. The unconventional part includes an additional larger capacitance, CL, that can be connected to the photodiode via a transfer gate controlled in part by a latch. In the high-gain mode, the signal labeled TSR in the figure is held low through the latch, which also helps to adapt the gain on a pixel-by-pixel basis. Light must be coupled to the pixel through a microlens or by back illumination in order to obtain a high effective fill factor; this is necessary to ensure high quantum efficiency, a loss of which would minimize the efficacy of the dynamic- range-enhancement scheme. Once the level of illumination of the pixel exceeds the threshold, TSR is turned on, causing the transfer gate to conduct, thereby adding CL to the pixel capacitance. The added capacitance reduces the conversion gain, and increases the pixel electron-handling capacity, thereby providing an extension of the dynamic range. By use of an array of comparators also at the bottom of the column, photocharge voltages on sampling capacitors in each column are compared with a reference voltage to determine whether it is necessary to switch from the high-gain to the low-gain mode. Depending upon the built-in offset in each pixel and in each comparator, the point at which the gain change occurs will be different, adding gain-dependent fixed pattern noise in each pixel. The offset, and hence the fixed pattern noise, is eliminated by sampling the pixel readout charge four times by use of four capacitors (instead of two such capacitors as in conventional design) connected to the bottom of the column via electronic switches SHS1, SHR1, SHS2, and SHR2, respectively, corresponding to high and low values of the signals TSR and RST. The samples are combined in an appropriate fashion to cancel offset-induced errors, and provide spurious-free imaging with extended dynamic range.

Pain, Bedabrata↗

Microrectenna: A Terahertz Antenna and Rectifier on a Chip

A microrectenna that would operate at a frequency of 2.5 THz has been designed and partially fabricated. The circuit is intended to be a prototype of an extremely compact device that could be used to convert radio-beamed power to DC to drive microdevices (see Figure 1). The microrectenna (see Figure 2) circuit consists of an antenna, a diode rectifier and a DC output port. The antenna consists of a twin slot array in a conducting ground plane (denoted the antenna ground plane) over an enclosed quarter-wavelength-thick resonant cavity (denoted the reflecting ground plane). The circuit also contains a planar high-frequency low-parasitic Schottky-barrier diode, a low-impedance microstrip transmission line, capacitors, and contact beam leads. The entire 3-D circuit is fabricated monolithically from a single GaAs wafer. The resonant cavity renders the slot radiation pattern unidirectional with a half-power beam width of about 65. A unique metal mesh on the rear of the wafer forms the backplate for the cavity but allows the GaAs to be wet etched from the rear surface of the twin slot antennas and ground plane. The beam leads protrude past the edge of the chip and are used both to mount the microrectenna and to make the DC electrical connection with external circuitry. The antenna ground plane and the components on top of it are formed on a 2- m thick GaAs membrane that is grown in the initial wafer MBE (molecular beam epitaxy) process. The side walls of the antenna cavity are not metal coated and, hence, would cause some loss of power; however, the relatively high permittivity (epsilon=13) of the GaAs keeps the cavity modes well confined, without the usual surface-wave losses associated with thick dielectric substrates. The Schottky-barrier diode has the usual submicron dimensions associated with THz operation and is formed in a mesa process above the antenna ground plane. The diode is connected at the midpoint of a microstrip transmission line, which is formed on 1- m-thick SiO (permittivity of 5) laid down on top of the GaAs membrane. The twin slots are fed in phase by this structure. To prevent radio-frequency (RF) leakage past the slot antennas, low-loss capacitors are integrated into the microstrip transmission line at the edges of the slots. The DC current- carrying lines extend from the outer edges of the capacitors, widen approaching the edges of the chip, and continue past the edges of the chip to become the beam leads used in tacking down the devices. The structure provides a self-contained RF to DC converter that works in the THz range.

Siegel, Peter↗

Nearly Direct Measurement of Relative Permittivity

A recently conceived technique for determining the relative permittivity of a material sample at a given frequency is more nearly direct than are prior techniques that involve measurement of such related non-electrical quantities as the size, shape, and/or weight of the specimen. The present technique involves only measurement of two voltages at the frequency in question, followed by calculation of the ratio between the voltages. The technique requires two circuits a test circuit and a reference circuit that are identical except as described below. Each circuit includes a capacitor C1 connected in series with a much larger capacitor C2 to form a voltage divider (see figure). C1 is a parallel-plate capacitor. The top electrode of C1 is connected to an AC signal source of voltage Va at the frequency of interest. The top electrode of C1 is surrounded by a guard electrode that, in turn, is surrounded by a grounded electrode. The bottom electrode of C1 is connected to the top electrode of C2. The bottom electrode of C2 is grounded. The volume enclosed by the top, bottom, and guard electrodes of C1 constitutes a sample cell. A material sample, having relative permittivity k at the frequency of interest, is placed in the sample cell. The exact shape and size of the sample volume is not critical and can be chosen to fit the material sample. What is critical is that (a) C2 in both circuits be identical and (b) the sample cell in the test circuit have the same size and shape as that in the reference circuit, so that the capacitances of the two sample cells are proportional to the permittivities of their contents.

Calle, Carlos I.↗

Characterizing the Performance of the Wheel Electrostatic Spectrometer

Insulators need to be discharged after each wheel revolution. Sensor responses repeatable within one standard deviation in the noise of the signal. Insulators may not need to be cleaned after each revolution. Parent Technology- Mars Environmental Compatibility Assessment/Electrometer Electrostatic sensors with dissimilar cover insulators Protruding insulators tribocharge against regolith simulant Developed for use on the scoop for the 2001 Mars Odyssey lander Wheel Electrostatic Spectrometer Embedded electrostatic sensors in prototype Martian rover wheel If successful, this technology will enable constant electrostatic testing on Mars Air ionizing fan used to neutralize the surface charge on cover insulators . WES rolled on JSClA lunar simulant Control experiment -Static elimination not conducted between trials -Capacitor discharged after each experiment Charge neutralization experiment -Static elimination conducted between trials -Capacitor discharged after each experiment. Air ionizing fan used on insulators after each wheel revolution Capacitor discharged after each trial Care was taken to roll WES with same speed/pressure Error bars represent one standard deviation in the noise of e ach sensor

Johansen, Michael R.↗

Summary of the 2012 Inductive Pulsed Plasma Thruster Development and Testing Program

Inductive pulsed plasma thrusters are spacecraft propulsion devices in which energy is capacitively stored and then discharged through an inductive coil. While these devices have shown promise for operation at high efficiency on a range of propellants, many technical issues remain before they can be used in flight applications. A conical theta-pinch thruster geometry was fabricated and tested to investigate potential improvements in propellant utilization relative to more common, flat-plate planar coil designs. A capacitor charging system is used to permit repetitive discharging of thrusters at multiple cycles per second, with successful testing accomplished at a repetition-rate of 5 Hz at power levels of 0.9, 1.6, and 2.5 kW. The conical theta-pinch thruster geometry was tested at cone angles of 20deg, 38deg, and 60deg, with single-pulse operation at 500 J/pulse and repetitionrate operation with the 38deg model quantified through direct thrust measurement using a hanging pendulum thrust stand. A long-lifetime valve was designed and fabricated, and initial testing was performed to measure the valve response and quantify the leak rate at beginning-of-life. Subscale design and testing of a capacitor charging system required for operation on a spacecraft is reported, providing insights into the types of components needed in the circuit topology employed. On a spacecraft, this system would accept as input a lower voltage from the spacecraft DC bus and boost the output to the high voltage required to charge the capacitors of the thruster.

Polzin, K. A.↗

Testing of Diode-Clamping in an Inductive Pulsed Plasma Thruster Circuit

Testing of a 5.5 kV silicon (Si) diode and 5.8 kV prototype silicon carbide (SiC) diode in an inductive pulsed plasma thruster (IPPT) circuit was performed to obtain a comparison of the resulting circuit recapture efficiency,eta(sub r), defined as the percentage of the initial charge energy remaining on the capacitor bank after the diode interrupts the current. The diode was placed in a pulsed circuit in series with a silicon controlled rectifier (SCR) switch, and the voltages across different components and current waveforms were collected over a range of capacitor charge voltages. Reverse recovery parameters, including turn-off time and peak reverse recovery current, were measured and capacitor voltage waveforms were used to determine the recapture efficiency for each case. The Si fast recovery diode in the circuit was shown to yield a recapture efficiency of up to 20% for the conditions tested, while the SiC diode further increased recapture efficiency to nearly 30%. The data presented show that fast recovery diodes operate on a timescale that permits them to clamp the discharge quickly after the first half cycle, supporting the idea that diode-clamping in IPPT circuit reduces energy dissipation that occurs after the first half cycle

Toftul, Alexandra↗

Design and Testing of a Small Inductive Pulsed Plasma Thruster

The design and testing of a small inductive pulsed plasma thruster (IPPT), shown in Fig. 1 with all the major subsystems required for a thruster of this kind are described. Thrust measurements and imaging of the device operated in rep-rated mode are presented to quantify the performance envelope of the device. The small IPPT described in this paper was designed to serve as a test-bed for the pulsed gas-valves and solid-state switches required for a IPPTs. A modular design approach was used to permit future modifications and upgrades. The thruster consists of the following sub-systems: a) a multi-turn, spiral-wound acceleration coil (27 cm o.d., 10 cm i.d.) driven by a 10 microFarad capacitor and switched with a high-voltage thyristor, b) a fast pulsed gas-valve, and c.) a glow-discharge pre-ionizer (PI) circuit. The acceleration-coil circuit may be operated at voltages up to 4 kV (the thyristor limit is 4.5 kV). The device may be operated at rep-rates up to 30 Hz with the present gas-valve. Thrust measurements and imaging of the device operated in rep-rated mode will be presented. The pre-ionizer consists of a 0.3 microFarad capacitor charged to 4 kV and connected to two annular stainless-steel electrodes bounding the area of the coil-face. The 4 kV potential is held across them and when the gas is puffed in over the coil, the PI circuit is completed, and a plasma is formed. Even at the less than optimal base-pressure in the chamber (approximately 5 × 10(exp −4) torr), the PI held-off the applied voltage, and only discharged upon command. For a capacitor charge of 2 kV the peak coil current is 4.1 kA, and during this pulse a very bright discharge (much brighter than from the PI alone) was observed (see Fig. 2). Interestingly, for discharges at this charge voltage the PI was not required as the current rise rate, dI/dt, of the coil itself was sufficient to ionize the gas.

Martin, Adam K.↗

The Impact of Harness Impedance on Hall Thruster Discharge Oscillations

Hall thrusters exhibit characteristic discharge voltage and current oscillations during steady-state operation. The lower frequency breathing-mode current oscillations are inherent to each thruster and could impact thruster operation and power processing unit (PPU) design. The design of the discharge output filter, in particular, the output capacitor is important because it supplies the high peak current oscillations that the thruster demands. However, space-rated, high-voltage capacitors are not readily available and can have significant mass and volume. So, it is important for a PPU designer to know what is the minimum amount of capacitance required to operate a thruster. Through Simulation Program with Integrated Circuit Emphasis modeling and electrical measurements on the Hall Effect Rocket with Magnetic Shielding thruster, it was shown that the harness impedance between the power supply and the thruster is the main contributor towards generating voltage ripple at the thruster. Also, increasing the size of the discharge filter capacitor, as previously implemented during thruster tests, does not reduce the voltage oscillations. The electrical characteristics of the electrical harness between the discharge supply and the thruster is crucial to system performance and could have a negative impact on performance, life and operation.

hollow cathodes↗

Low and High-Power Inductive Pulsed Plasma Thruster Development Testing at NASA-MSFC

The inductive pulsed plasma thruster (IPPT) is an electromagnetic plasma accelerator that has been identified in NASA roadmaps as an enabling propulsion technology for some niche low-power missions and for high-power in-space propulsion needs. The IPPT is an electrodeless space propulsion device where a capacitor is charged to an initial voltage and then discharged producing a high current pulse through a coil. The field produced by this pulse ionizes propellant, inductively driving current in a plasma located near the face of the coil. Once the plasma is formed it can be accelerated and expelled at a high exhaust velocity by the electromagnetic Lorentz body force arising from the interaction of the induced plasma current and the magnetic field produced by the current in the coil. Thrusters of this type possess many demonstrated and potential benefits that make them worthy of continued investigation. The electrodeless nature of these thrusters eliminates the lifetime and contamination issues associated with electrode erosion in conventional electric thrusters. Also, a wider variety of propellants are accessible when compatibility with metallic electrodes in no longer an issue. IPPTs have been successfully operated using propellants like ammonia, hydrazine, and CO2, and there is no fundamental reason why they would not operate on other in situ propellants like H2O. It is well-known that pulsed accelerators can maintain constant specific impulse (I(sub sp)) and thrust efficiency (eta(sub t)) over a wide range of input power levels by adjusting the pulse rate to hold the discharge energy per pulse constant. It has also been demonstrated that an inductive pulsed plasma thruster can operate in a regime where eta(sub t) is relatively constant over a wide range of I(sub sp) values (3000-8000 s). Finally, thrusters in this class have operated in single-pulse mode at high energy per pulse, and by increasing the pulse rate they offer the potential to process very high levels of power using a single thruster. There has been significant previous research on IPPTs designed around a planar-coil (flat-plate) geometry. The most notable of these was the Pulsed Inductive Thruster (PIT), with the PIT MkV presently representing the state-of- the-art in pulsed high-power IPPT technological development. In this paper, we focus on two planar-geometry devices that operate at significantly different power levels. Most work performed at NASA-Marshall Space Flight Center (MSFC) has, to date, focused on lower power thruster operation (approx. = 10s to 100s of J/pulse, up to 2-2.5 kW average power throughput) and previously described. The most recent work aimed to assemble a device that could be tested in cyclic mode on a thrust-stand, and which could augment the existing data set for IPPTs. In addition, the thruster was designed to serve as a test-bed for solid state switching circuitry and pulsed gas valves, with the modular design of the device allowing for variation in or upgrades to test configuration. Recently, MSFC obtained on loan from the Georgia Institute of Technology (Atlanta, GA) the PIT MkVI, successor to the PIT MkV. The MkV and MkVI are similar in design with much of the hardware from the former, specifically the capacitors and spark-gap switches, being reused in the latter. The coil is similar in geometry but has bent copper rods used in the latest iteration in place of the Litz wire windings found in the MkV. The MkVI master switch for the spark gaps is located in the vacuum chamber contained within a sealed, pressurized vessel fastened to the back of the thruster. This is different from the MkV where many capacitor charging lines and spark gap-triggering delay lines ran to the thruster from a master trigger located outside the vacuum chamber. The MkVI was damaged during testing soon after its fabrication was completed. The thruster arrived at MSFC still-damaged and mostly disassembled into many individual pieces. The device has been repaired, with a few additional design changes implemented after discussions with the late Prof. Lovberg regarding the initial testing results and issues encountered. In the present work, we present results from testing of both the small IPPT and the larger MkVI thruster. The smaller device (Fig. 1) is tested on a thrust stand on multiple gases to demonstrate its capability to operate in a repetition-rate mode and serve as a IPPT technology-development testbed. The larger MkVI (Fig. 2) is operated for the first time in its newly reconstituted state, demonstrating full-power pulsed operation and, for the first time, repetition-rate operation of a high-power IPPT. The additional upgrades required for synchronous operation of all the pulsed systems in single-pulse and repetition-rate mode are described in detail.

Polzin, Kurt A.↗

The Impact of Harness Impedance on Hall Thruster Discharge Oscillations

Hall thrusters exhibit characteristic discharge voltage and current oscillations during steady-state operation. The lower frequency breathing-mode current oscillations are inherent to each thruster and could impact thruster operation and power processing unit (PPU) design. The design of the discharge output filter, in particular, the output capacitor is important because it supplies the high peak current oscillations that the thruster demands. However, space-rated, high-voltage capacitors are not readily available and can have significant mass and volume. So, it is important for a PPU designer to know what is the minimum amount of capacitance required to operate a thruster. Through Simulation Program with Integrated Circuit Emphasis modeling and electrical measurements on the Hall Effect Rocket with Magnetic Shielding thruster, it was shown that the harness impedance between the power supply and the thruster is the main contributor towards generating voltage ripple at the thruster. Also, increasing the size of the discharge filter capacitor, as previously implemented during thruster tests, does not reduce the voltage oscillations. The electrical characteristics of the electrical harness between the discharge supply and the thruster is crucial to system performance and could have a negative impact on performance, life and operation.

ion engines↗

The Impact of Harness Impedance on Hall Thruster Discharge Oscillations

Hall thrusters exhibit characteristic discharge voltage and current oscillations during steady-state operation. The lower frequency breathing-mode current oscillations are inherent to each thruster and could impact thruster operation and PPU design. The design of the discharge output filter, in particular, the output capacitor is important because it supplies the high peak current oscillations that the thruster demands. However, space-rated, high-voltage capacitors are not readily available and can have significant mass and volume. So, it is important for a PPU designer to know what is the minimum amount of capacitance required to operate a thruster. Through SPICE modeling and electrical measurements on the Hall Effect Rocket with Magnetic Shielding (HERMeS) thruster, it was shown that the harness impedance between the power supply and the thruster is the main contributor towards generating voltage ripple at the thruster. Also, increasing the size of the discharge filter capacitor, as previously implemented during thruster tests, does not reduce the voltage oscillations. The electrical characteristics of the electrical harness between the discharge supply and the thruster is crucial to system performance and could have a negative impact on performance, life and operation.

Pinero, Luis R.↗

Inductive Pulsed Plasma Thruster Development Testing at NASA-MSFC

The inductive pulsed plasma thruster (IPPT) is an electromagnetic plasma accelerator that has been identified in NASA roadmaps as an enabling propulsion technology for some niche low-power missions and for high-power in-space propulsion needs. The IPPT is an electrodeless space propulsion device where a capacitor is charged to an initial voltage and then discharged producing a high current pulse through a coil. The field produced by this pulse ionizes propellant, inductively driving current in a plasma located near the face of the coil. Once the plasma is formed it can be accelerated and expelled at a high exhaust velocity by the electromagnetic Lorentz body force arising from the interaction of the induced plasma current and the magnetic field produced by the current in the coil. Thrusters of this type possess many demonstrated and potential benefits that make them worthy of continued investigation. The electrodeless nature of these thrusters eliminates the lifetime and contamination issues associated with electrode erosion in conventional electric thrusters. Also, a wider variety of propellants are accessible when compatibility with metallic electrodes in no longer an issue. IPPTs have been successfully operated using propellants like ammonia, hydrazine, and CO2, and there is no fundamental reason why they would not operate on other in situ propellants like H2O. It is well-known that pulsed accelerators can maintain constant specific impulse (I(sub sp)) and thrust efficiency (η(sub t)) over a wide range of input power levels by adjusting the pulse rate to hold the discharge energy per pulse constant. It has also been demonstrated that an inductive pulsed plasma thruster can operate in a regime where η(sub t) is relatively constant over a wide range of I(sub sp) values (3000-8000 s). Finally, thrusters in this class have operated in single-pulse mode at high energy per pulse, and by increasing the pulse rate they offer the potential to process very high levels of power using a single thruster. There has been significant previous research on IPPTs designed around a planar-coil (flat-plate) geometry. The most notable of these was the Pulsed Inductive Thruster (PIT), with the PIT MkV presently representing the state of- the-art in pulsed high-power IPPT technological development. In this paper, we focus on two planar-geometry devices that operate at significantly different power levels. Most work performed at NASA-Marshall Space Flight Center (MSFC) has, to date, focused on lower power thruster operation (≈ 10s to 100s of J/pulse, up to 2-2.5 kW average power throughput) and previously described in Refs. [5,6]. The most recent work aimed to assemble a device that could be tested in cyclic mode on a thrust-stand, and which could augment the existing data set for IPPTs. In addition, the thruster was designed to serve as a test-bed for solid state switching circuitry and pulsed gas valves, with the modular design of the device allowing for variation in or upgrades to test configuration. Recently, MSFC obtained on loan from the Georgia Institute of Technology (Atlanta, GA) the PIT MkVI, successor to the PIT MkV. The MkV and MkVI are similar in design with much of the hardware from the former, specifically the capacitors and spark-gap switches, being reused in the latter. The coil is simliar in geometry but has bent copper rods used in the latest iteration in place of the Litz wire windings found in the MkV. The MkVI master switch for the spark gaps is located in the vacuum chamber contained within a sealed, pressurized vessel fastened to the back of the thruster. This is different from the MkV where many capacitor charging lines and spark gap-triggering delay lines ran to the thruster from a master trigger located outside the vacuum chamber. The MkVI was damaged during testing soon after its fabrication was completed. The thruster arrived at MSFC still-damaged and mostly disassembled into many individual pieces. The device has been repaired, with a few additional design changes implemented after discussions with the late Prof. Lovberg regarding the initial testing results and issues encountered.

Polzin, Kurt A.↗

Detonation to Deflagration-Mode Transitions in Pulsed Plasma Accelerators

PULSED plasma accelerators typically operate by storing energy in a capacitor bank and then discharging this energy through a gas. The current in such discharges will ionize the gas and produce a strong magnetic field, which interacts with the flowing current to accelerate the plasma through the Lorentz body force. For the present work, two plasma accelerator types employing this general scheme are of interest: the gas-fed pulsed plasma thruster (PPT) 1 and the quasi-steady magnetoplasmadynamic (MPD) accelerator. 2 The gas-fed pulsed plasma accelerator is generally understood as a completely transient device discharging in ∼1-10 μs. When the capacitor bank is discharged through the gas, a current sheet forms at the breech of the thruster and propagates forward under a j × B body force, entraining and accelerating propellant it encounters. This process is sometimes referred to in literature as 'snowplowing' the propellant or accelerating the gas in a detonation-mode because the current sheet representation approximates that of a strong detonation shockwave propagating through the gas. For these devices, acceleration of the initial current sheet ceases when either the current sheet reaches the end of the device and is ejected or when the current in the circuit reverses, striking a new 'crowbar' discharge at the breech and depriving the initial sheet of additional acceleration. In general, PPTs typically claim thrust efficiencies (ratio of jet kinetic energy to input electrical energy) registering in the teens or lower. 3 In the quasi-steady MPD accelerator, the pulse is lengthened to ∼1 ms or longer and maintained at an approximately constant level during discharge through the use of a pulse-forming network (PFN) of capacitors. After an initial transient discharge, which is typically short relative to the overall discharge period, the plasma assumes a relatively steady-state configuration, known as 'quasi-steady' MPD operation. 2 In this state, ionized gas flows through a stationary current channel in a manner that is sometimes referred to as deflagration-mode operation owing to the similarities to deflagration waves in gases. The plasma experiences electromagnetic acceleration as the plasma flows through the current channel towards the exit of the device. Quasi-steady MPD thrusters claim efficiencies up to 50% for certain propellants.4 There has been significant and sustained research over several decades on both gas-fed PPTs and quasi-steady MPD thrusters, however there have been pulsed thrusters that do not appear to exactly fit either classification, instead possessing a mixture of operational qualities characteristic of both thruster variants. The Coaxial High ENerGy (CHENG) thruster by Cheng, et al.5 operated on the short 10 μs timescales characteristic of PPTs, but claimed the high thrust densities, high efficiencies, and low electrode erosion rates that are more consistent with the MPD/deflagration mode of plasma acceleration. Gas-fed PPT research by Ziemer, et al. 3, 6 identified two separate regimes of performance in those thrusters. The regime at higher mass bits (termed Mode I in that work) possessed relatively constant thrust efficiency as a function of mass bit, while the second regime at very low mass bits (termed Mode II) exhibited an increase in efficiency with decreasing mass bit. Work by Poehlmann et al.7 and by Sitaraman and Raja8 sought to understand the performance of the CHENG thruster and the Mode I/Mode II performance in PPTs by modeling the acceleration using the Hugoniot Relation, with the detonation and deflagration modes of plasma acceleration representing two distinct sets of solutions to the relevant conservation laws. In these works, it was proposed that the values of the various controllable parameters determined whether the accelerator would operate in detonation or deflagration mode. Our hypothesized view of the acceleration process in the CHENG thruster and in PPTs experiencing a transition from Mode I to Mode II is inspired by observations of the transition from the PPT mode of operation to the quasi-steady MPD mode. Specifically, the quasi-steady MPD was discovered by driving a PPT to extended pulse lengths. Above a certain pulse length threshold the transient plasma current sheet transitions into a stable plasma acceleration mode that 'replicates in every observable detail steady flow self-field magnetoplasmadynamic acceleration.' 9 In the present work, instead of treating the accelerator as if it were only operating in a single mode during a pulse, we consider the initial stage of the discharge in all cases as a current sheet forming at the breach of the accelerator and moving towards the exit as a detonation wave. If the current sheet reaches the exit of the accelerator before the discharge is completed, the view of the acceleration mode transitions to the deflagration mode-type found in quasi-steady MPD thrusters. In previous work10 we presented a modeling framework that first captured the time-evolution of the current sheet (detonation) mode of the thruster and then transitioned into the quasi-steady MPD (deflagration) mode of plasma acceleration. In the present work, variations of the controllable parameters - specifically the pulsed circuit properties, the amount of mass injected into the thruster, and the relative timing between the initial gas injection and the initiation of the plasma current sheet - will be used to explore the thruster performance. A range of parameters are explored to demonstrate that standard gas-fed pulsed plasma accelerators, the CHENG thruster, and the quasi-steady MPD accelerator are variations of the same device, with the overall acceleration of the plasma depending upon the behavior of the plasma discharge during initial transient phase and the relative lengths of the detonation and deflagration modes of operation.

Polzin, Kurt A.↗

Fabricating with Crystalline Si to Improve Superconducting Detector Performance

We built and measured radio-frequency (RF) loss tangent, tan δ, evaluation structures using float-zone quality silicon-on-insulator (SOI) wafers with 5 μm thick device layers. Superconducting Nb components were fabricated on both sides of the SOI Si device layer. Our main goals were to develop a robust fabrication for using crystalline Si (c-Si) dielectric layers with superconducting Nb components in a wafer bonding process and to confirm that tan δ with c-Si dielectric layers was reduced at RF frequencies compared to devices fabricated with amorphous dielectrics, such as SiO2 and SixNy, where tan δ ~ 10(exp -3). Our primary test structure used a Nb coplanar waveguide (CPW) readout structure capacitively coupled to LC resonators, where the capacitors were defined as parallel-plate capacitors on both sides of a c-Si device layer using a wafer bonding process with benzocyclobutene (BCB) wafer bonding adhesive. Our control experiment, to determine the intrinsic tan δ in the SOI device layer without wafer bonding, also used Nb CPW readout coupled to LC resonators; however, the parallel-plate capacitors were fabricated on both sides of the Si device layer using a deep reactive ion etch (DRIE) to access the c-Si underside through the buried oxide and handle Si layers in the SOI wafers. We found that our wafer bonded devices demonstrated F· δ = (8 +/- 2) × 10(exp -5), where F is the filling fraction of two-level states (TLS). For the control experiment, F· δ = (2.0 +/- 0.6) × 10(exp -5), and we discuss what may be degrading the performance in the wafer bonded devices as compared to the control devices.

Beyer, A. D↗

Fabricating with Crystalline Si to Improve Superconducting Detector Performance

We built and measured radio-frequency (RF) loss tangent, tan d, evaluation structures using float-zone quality silicon-on-insulator (SOI) wafers with 5 µ m thick device layers. Superconducting Nb components were fabricated on both sides of the SOI Si device layer. Our main goals were to develop a robust fabrication for using crystalline Si (c-Si) dielectric layers with superconducting Nb components in a wafer bonding process and to confirm that tan d with c-Si dielectric layers was reduced at RF frequencies compared to devices fabricated with amorphous dielectrics, such as SiO2 and SixNy, where tan d ~ 10-3. Our primary test structure used a Nb coplanar waveguide (CPW) readout structure capacitively coupled to LC resonators, where the capacitors were defined as parallel-plate capacitors on both sides of a c-Si device layer using a wafer bonding process with benzocyclobutene (BCB) wafer bonding adhesive. Our control experiment, to determine the intrinsic tan d in the SOI device layer without wafer bonding, also used Nb CPW readout coupled to LC resonators; however, the parallel-plate capacitors were fabricated on both sides of the Si device layer using a deep reactive ion etch (DRIE) to access the c-Si underside through the buried oxide and handle Si layers in the SOI wafers. We found that our wafer bonded devices demonstrated F· d = (8 ± 2) × 10-5, where F is the filling fraction of two-level states (TLS). For the control experiment, F· d = (2.0 ± 0.6) × 10-5, and we discuss what may be degrading the performance in the wafer bonded devices as compared to the control devices.

Beyer, A D↗