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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 541 records · Page 30
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NASA NTRS1989

Electron cyclotron resonance deposition of a-Si:H and a-C:H films

Amorphous silicon (a-Si:H) and amorphous carbon (a-C:H) films have been deposited by electron cyclotron resonance (ECR) microwave plasma enhanced CVD. A high deposition rate of 25 A/sec and a light-to-dark conductivity ratio of 500,000 for a-Si:H films have been achieved by the ECR process using a pure silane plasma. ECR microwave plasmas have been analyzed by in situ optical emission spectroscopy (OES) and have shown a strong H-asterisk emission at 434 nm indicating higher chemical reactivity than RF plasmas. The linear correlation between the film deposition rate and the SiH-asterisk emission intensity of ECR silane plasma suggests that SiH-asterisk species are related to the neutral radicals which are responsible for the a-Si:H film deposition. Hard and soft a-C:H films have been deposited by ECR with and without RF bias power, respectively. The RF bias to the substrate is found to play a critical role in determining the film structure and the carbon bonding configuration of ECR deposited a-C:H films. Raman spectra of these films indicate that ECR deposition conditions can be optimized to produce diamond films.

Shing, Y. H.↗
NASA NTRS1990

Wide-bandgap epitaxial heterojunction windows for silicon solar cells

It is shown that the efficiency of a solar cell can be improved if minority carriers are confined by use of a wide-bandgap heterojunction window. For silicon (lattice constant a = 5.43 A), nearly lattice-matched wide-bandgap materials are ZnS (a = 5.41 A) and GaP (a = 5.45 A). Isotype n-n heterojuntions of both ZnS/Si and GaP/Si were grown on silicon n-p homojunction solar cells. Successful deposition processes used were metalorganic chemical vapor deposition (MO-CVD) for GaP and ZnS, and vacuum evaporation of ZnS. Planar (100) and (111) and texture-etched - (111)-faceted - surfaces were used. A decrease in minority-carrier surface recombination compared to a bare surface was seen from increased short-wavelength spectral response, increased open-circuit voltage, and reduced dark saturation current, with no degradation of the minority carrier diffusion length.

Landis, Geoffrey A.↗
NASA NTRS1990

Modeling of the SiC chemical vapor deposition process and comparison with experimental results

A model of the NASA Lewis SiC CVD process is described, and the results presented. A key feature of the model is the direct coupling of gas-phase chemical kinetics with diffusion. A deposition chemistry model using reactive sticking coefficients for each gas-phase species provides the diffusion boundary conditions. SiC deposition rates predicted by the model agree reasonably well with experimentally observed rates.

Annen, K. D.↗
NASA NTRS1990

Non-catalytic coatings for hypersonic vehicle applications

CVD coatings of boron-oxygen-silicon and aluminum-boron-oxygen and silicon compositions were applied to alpha 2 and gamma titanium-aluminide alloys, and tested under simulated earth reentry conditions to evaluate oxidation protection, recombination effifiency and total emittance under cyclic exposures between temperatures of 300 and 1255 K. The degree of oxidation protection afforded to the alloys was evaluated from the amount of specimen weight gain after a 100 hour exposure to air at atmospheric pressure and at a temperature of 1255 K. Data are presented for two types of coatings, a monolithic and a multilayer, which have recombination efficiencies from 0.005 to 0.020 after ten one-half hour long simulated reentry cycles. Total normal emittance was 0.80 or greater and weight gain was less than 10 g/sq m both coating types. Compositional and morphological changes resulting from the exposures are discussed in relation to time-dependent variations in recombination efficiency.

Cunnington, G. R.↗
NASA NTRS1989

Space optical materials and space qualification of optics; Proceedings of the Meeting, Orlando, FL, Mar. 30, 31, 1989

The present conference on space optical materials discusses current metals and nonmetals-related processing R&D efforts, investigations of space optical effects, and the spaceborne qualification of optical components and systems. Attention is given to CVD SiC for optical applications, optical materials for space-based lasers, the high-efficiency acoustooptic and optoelectronic crystalline material Tl3AsSe3, HIPed Be for low-scatter cryogenic optics, durable solar-reflective surfacing for Be optics, thermal effects on Be mirrors, contamination effects on optical surfaces in the monolayer regime, and IR background signature survey experiment results. Also discussed are the contamination-control program for the EUE instrument, an optical multipass radiation system for the heating of levitated samples, optical sample-position sensing for electrostatic levitation, and the qualification of space lighting systems.

Hale, Robert R.↗
NASA NTRS1990

MIS capacitor studies on silicon carbide single crystals

Cubic SIC metal-insulator-semiconductor (MIS) capacitors with thermally grown or chemical-vapor-deposited (CVD) insulators were characterized by capacitance-voltage (C-V), conductance-voltage (G-V), and current-voltage (I-V) measurements. The purpose of these measurements was to determine the four charge densities commonly present in an MIS capacitor (oxide fixed charge, N(f); interface trap level density, D(it); oxide trapped charge, N(ot); and mobile ionic charge, N(m)) and to determine the stability of the device properties with electric-field stress and temperature. The section headings in the report include the following: Capacitance-voltage and conductance-voltage measurements; Current-voltage measurements; Deep-level transient spectroscopy; and Conclusions (Electrical characteristics of SiC MIS capacitors).

Kopanski, J. J.↗
NASA NTRS1990

Possibilities for LWIR detectors using MBE-grown Si(/Si(1-x)Ge(x) structures

Traditionally, long wavelength infrared (LWIR) detection in Si-based structures has involved either extrinsic Si or Si/metal Schottky barrier devices. Molecular beam epitaxially (MBE) grown Si and Si/Si(1-x)Ge(x) heterostructures offer new possibilities for LWIR detection, including sensors based on intersubband transitions as well as improved conventional devices. The improvement in doping profile control of MBE in comparison with conventional chemical vapor deposited (CVD) Si films has resulted in the successful growth of extrinsic Si:Ga, blocked impurity-band conduction detectors. These structures exhibit a highly abrupt step change in dopant profile between detecting and blocking layers which is extremely difficult or impossible to achieve through conventional epitaxial growth techniques. Through alloying Si with Ge, Schottky barrier infrared detectors are possible, with barrier height values between those involving pure Si or Ge semiconducting materials alone. For both n-type and p-type structures, strain effects can split the band edges, thereby splitting the Schottky threshold and altering the spectral response. Measurements of photoresponse of n-type Au/Si(1-x)Ge(x) Schottky barriers demonstrate this effect. For intersubband multiquntum well (MQW) LWIR detection, Si(1-x)Ge(x)/Si detectors grown on Si substrates promise comparable absorption coefficients to that of the Ga(Al)As system while in addition offering the fundamental advantage of response to normally incident light as well as the practical advantage of Si-compatibility. Researchers grew Si(1-x)Ge(x)/Si MQW structures aimed at sensitivity to IR in the 8 to 12 micron region and longer, guided by recent theoretical work. Preliminary measurements of n- and p-type Si(1-x)Ge(x)/Si MQW structures are given.

Hauenstein, Robert J.↗
NASA NTRS1990

Fluid dynamics and low gravity effects of chemical vapor deposition

Based on the comparison between experimental data and numerical results for the growth of GaAs from TMGa, it was shown that 3D simulations are necessary to simulate rectangular CVD reactors even when operated under subcritical (Ra) conditions. The important points found are summarized in the three attached reprints. The experimental studies of mixed convection in horizontal channels have shown three regimes of high Ra (22,220) number flows. At Re = 18.5, the rolls develop very quickly, significantly modulating the axial velocity even before it reaches the beginning of the hot plate. A few centimeters downstream, the velocities become asymmetric about the vertical centerplane and at x = 12 cm, become unsteady. These asymmetries were predicted theoretically, but experimental evidence has not been published prior to this work. At Re = 36, the axial velocity is only slightly modified at x = 0. Although the flow remains steady and symmetric about the vertical centerplane, there is a small spatial oscillation in the velocities over the length of the channel. The period of this oscillation was around 5 cm. At Re = 54, the longitudinal rolls developed smoothly over a length of 30 cm, with no asymmetries, unsteadiness, or spatial oscillations. Comparison of numerical simulations of these flows to experiments has revealed the importance and difficulty of setting proper thermal boundary conditions on the sidewalls. Calculated flows and experimentally measured flows showed very similar profiles, but at different axial locations, with the rolls developing more rapidly in the experiments. This is directly attributable to partially conducting sidewalls of the apparatus being hotter in the entrance section than the adiabatic walls of the simulations. A thorough comparison of the experimental data and numerical results for a variety of sidewall boundary conditions is in preparation.

Nyce, Thomas A.↗
NASA NTRS1991

The high temperature creep behavior of oxides and oxide fibers

A thorough review of the literature was conducted on the high-temperature creep behavior of single and polycrystalline oxides which potentially could serve as fiber reinforcements in ceramics or metal matrix applications. Sapphire when oriented with the basal plane perpendicular to the fiber axis (c-axis oriented) is highly creep resistant at temperatures in excess of 1600 C and applied loads of 100 MPa and higher. Pyramidal slip is preferentially activated in sapphire under these conditions and steady-state creep rates in the range of 10(exp -7) to 10 (exp -8)/s were reported. Data on the creep resistance of polycrystalline beryllia suggest that C-axiz oriented single crystal beryllia may be a viable candidate as a fiber reinforcement material; however, the issure of fabricability and moisture sensitivity must be addressed for this material. Yttrium aluminum garnet (YAG) also appears to be a fiber candidate material having a high resistance to creep which is due to it's complex crystal structure and high Peierl resistance. The high creep resistance of garnet suggests that there may be other complex ternary oxides such as single crystal mullite which may also be candidate materials for fiber reinforcements. Finally, CVD and single crystal SiC, although not oxides, do possess a high resistance to creep in the temperature range between 1550 and 1850 C and under stresses of 110 to 220 MPa. From a review of the literature, it appears that for high creep resistant applications sapphire, silicon carbide, yttrium aluminum garnet, mullite, and beryllia are desirable candidate materials which require further investigation.

Jones, Linda E.↗
NASA NTRS1991

Near-Earth asteroids: Metals occurrence, extraction, and fabrication

Near-earth asteroids occur in three principle types of orbits: Amor, Apollo, and Aten. Amor asteroids make relatively close (within 0.3 AU) approaches to the earth's orbit, but do not actually overlap it. Apollo asteroids spend most of their time outside the earth's orbital path, but at some point of close approach to the sun, they cross the orbit of the earth. Aten asteroids are those whose orbits remain inside the earth's path for the majority of their time, with semi-major axes less than 0.1 AU. Near-earth orbit asteroids include: stones, stony-irons, irons, carbonaceous, and super-carbonaceous. Metals within these asteroids include: iron, nickel, cobalt, the platinum group, aluminum, titanium, and others. Focus is on the extraction of ferrous and platinum group metals from the stony-iron asteroids, and the iron asteroids. Extraction of the metal fraction can be accomplished through the use of tunnel-boring-machines (TBM) in the case of the stony-irons. The metals within the story-iron asteroids occur as dispersed granules, which can be separated from the stony fraction through magnetic and gaseous digestion separation techniques. The metal asteroids are processes by drilling and gaseous digestion or by gaseous digestion alone. Manufacturing of structures, housings, framing networks, pressure vessels, mirrors, and other products is accomplished through the chemical vapor deposition (CVD) of metal coating on advanced composites and on the inside of contour-defining inflatables (CDI). Metal coatings on advanced composites provide: resistance to degradation in the hostile environments of space; superior optical properties; superior heat dissipation; service as wear coatings; and service as evidential coatings. Metal coatings on the inside of CDI produce metal load-bearing products. Fibers such as graphite, kevlar, glass, ceramic, metal, etc., can be incorporated in the metal coatings on the inside of CDI producing metal matrix products which exhibit high strength and resist crack propagation.

Westfall, Richard↗
NASA NTRS1990

The structure of carbon in chemically vapor deposited SiC monofilaments

Electron diffraction and high resolution TEM have been used to study the microstructures of C-rich regions in CVD SCS-6 SiC fibers. The reciprocal lattice of such structures, and their diffraction patterns, have been ascertained on the basis of geometrical considerations. While the C microstructures in the substrate filament and the outer coating layers of the fabric are consistent with different distributions of Oberlin's (1989) 'basic structural units', the microstructure of the inner substrate coating is consistent with turbostratic C.

Ning, X. J.↗
NASA NTRS1990

Electron cyclotron resonance deposition of diamond-like films

Electron cyclotron resonance (ECR) microwave plasma CVD has been developed at low pressures (0.0001 - 0.01 torr) and at ambient and high substrate temperatures (up to 750 C), to achieve large-area (greater than 4 in. diameter) depositions of diamondlike amorphous carbon (a - C:H) films. The application of a RF bias to the substrate stage, which induces a negative self-bias voltage, is found to play a critical role in determining carbon bonding configurations and in modifying the film morphology. There are two distinct types of ECR-deposited diamondlike films. One type of diamondlike film exhibits a Raman spectrum consisting of broad and overlapping, graphitic D (1360/cm, line width = 280/cm) and G (1590/cm, line width 140/cm) lines, and the other type has a broad Raman peak centered at appoximately 1500/cm. Examination of plasma species by optical emission spectroscopy shows no correlation between the CH-asterisk emission intensity and the deposition rate of diamondklike films.

Shing, Y. H.↗
NASA NTRS1990

Three-dimensional modelling of horizontal chemical vapor deposition. I - MOCVD at atmospheric pressure

A systematic numerical study of the MOCVD of GaAs from trimethylgallium and arsine in hydrogen or nitrogen carrier gas at atmospheric pressure is reported. Three-dimensional effects are explored for CVD reactors with large and small cross-sectional aspect ratios, and the effects on growth rate uniformity of tilting the susceptor are investigated for various input flow rates. It is found that, for light carrier gases, thermal diffusion must be included in the model. Buoyancy-driven three-dimensional flow effects can greatly influence the growth rate distribution through the reactor. The importance of the proper design of the lateral thermal boundary conditions for obtaining layers of uniform thickness is emphasized.

Ouazzani, Jalil↗
NASA NTRS1991

Controlled growth of 3C-SiC and 6H-SiC films on low-tilt-angle vicinal (0001) 6H-SiC wafers

It has been found that, with proper pregrowth surface treatment, 6H-SiC single-crystal films can be grown by chemical vapor deposition (CVD) at 1450 C on vicinal (0001) 6H-SiC with tilt angles as small as 0.1 deg. Previously, tilt angles of greater than 1.5 deg were required to achieve 6H on 6H at this growth temperature. In addition, 3C-SiC could be induced to grow within selected regions on the 6H substrate. the 3C regions contained few (or zero) double-positioning boundaries and a low density of stacking faults. A new growth model is proposed to explain the control of SiC polytype in this epitaxial film growth process.

Powell, J. A.↗
NASA NTRS1992

Pyrolytic boron nitride coatings on ceramic yarns and fabrication of insulations

Pyrolytic boron nitride (PBN) was deposited on Nicalon NL 202 silicon carbide yarns at 1000 to 1200 C with the goal of improving the resistance of the Nicalon to deterioration in an aerodynamic environment at temperatures up to 1000 C. For continuous coating, the yarns were fed through the deposition chamber of a pilot plant sized CVD furnace at a rate of about 2 feet per minute. PBN coatings were obtained by reacting boron trichloride and ammonia gases inside the deposition chamber. Most of the PBN coatings were made at around 1080 C to minimize thermal degradation of the Nicalon. Pressures were typically below 0.1 Torr. The coated yarns were characterized by weight per unit length, tensile strength and modulus, scanning electron microscopy, and scanning Auger microscopy. The PBN coated Nicalon was woven into cloth, but was not entirely satisfactory as a high temperature sizing. Several 13 in. square pieces of Nicalon cloth were coated with PBN in a batch process in a factory sized deposition furnace. Samples of cloth made from the PBN coated Nicalon were sewn into thermal insulation panels, whose performance is being compared with that of panels made using uncoated Nicalon.

Moore, Arthur W.↗
NASA NTRS1991

Optical coating technology for the EUV

Advances in optical coating and materials technology are one of the key motivators for the development of missions such as the Far Ultraviolet Spectroscopic Explorer recently selected by NASA for an Explorer class mission in the mid 1990's. The performance of a range of candidate coatings are reviewed for normal-incidence and glancing-incidence applications, and attention is given to strengths and problem areas for their use in space. The importance of recent developments in multilayer films, chemical-vapor deposited SiC (CVD-SiC) mirrors, and SiC films are discussed in the context of EUV instrumentation design. For example, the choice of optical coatings is a design driver for the selection of the average glancing angle for the FUSE telescope, and impacts efficiency, short-wavelength cut-off, and physical size.

Osantowski, J. F.↗
NASA NTRS1992

Failure mechanisms of 3-D woven SiC/SiC composites under tensile and flexural loading at room and elevated temperatures

Nicalon silicon carbide 3D yarn with silicon carbide matrix composites made through a chemical vapor infiltration (CVI) process were investigated under tensile and flexural loading at 23, 1200 and 1550 C in air. The effectiveness of a chemical vapor deposition (CVD) SiC surface coating was also evaluated in severe oxidizing environment. Acoustic emission sensors and in situ optical microscopy were used at room temperature to monitor the failure mechanisms. It is shown that the level of tensile stress at which nonlinear behavior begins is not drastically reduced at 1200 and 1550 C when composites were protected by a SiC surface coating. Extensive fiber pull-out was observed only in the 1550 C specimen. Similar behaviors were also found in flexural specimens.

Chulya, Abhisak↗
NASA NTRS1992

Reaction-bonded Si3N4 and SiC matrix composites

A development status evaluation is presented for the reaction-bonded SiC- and Si3N4-matrix types of fiber-reinforced ceramic-matrix composite (FRCMC). A variety of reaction-bonding methods are being pursued for FRCMC fabrication: CVI, CVD, directed metal oxidation, and self-propagating high-temperature synthesis. Due to their high specific modulus and strength, toughness, and fabricability, reaction-bonded FRCMC are important candidate materials for such heat-engine components as combustor liners, nozzles, and turbine and stator blading. The improvement of long-term oxidative stability in these composites is a major goal of current research.

Bhatt, Ramakrishna T.↗