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At least 541 records · Page 30

Instabilities in a capacitively coupled oxygen plasma

Periodic fluctuations in the frequency range from 0.3 to 3 kHz were experimentally investigated in capacitively coupled radio frequency (13.56 MHz) oxygen plasma. The Gaussian beam microwave interferometry directly provides the line integrated electron density fluctuations. A system of two Langmuir probes measured the floating potential spatially (axial, radial) and temporally resolved. Hence, the floating potential fluctuation development is mapped within the discharge volume and provides a kind of discharge breathing and no wave propagation. Finally, it was measured the optical emission pattern of atomic oxygen during the fluctuation as well as the RF phase resolved optical emission intensity at selected phase position of the fluctuation by an intensified charge-coupled device camera. The deduced excitation rate pattern reveals the RF sheath dynamics and electron heating mechanisms, which is changing between low and high electronegativity during a fluctuation cycle. A perturbation calculation was taken into account using a global model with 15 elementary collision processes in the balance equations for the charged plasma species (O{sub 2}{sup +}, e, O{sup −}, O{sub 2}{sup −}) and a harmonic perturbation. The calculated frequencies agree with the experimentally observed frequencies. Whereby, the electron attachment/detachment processes are important for the generation of this instability.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Effect of electrode spacing on the density distributions of electrons, ions, and metastable and radical molecules in SiH{sub 4}/NH{sub 3}/N{sub 2}/He capacitively coupled plasmas

Semiconductor fabrication often requires the deposition of hydrogenated silicon nitride (SiN{sub x}H{sub y}) film using SiH{sub 4}/NH{sub 3}/N{sub 2}/He capacitively coupled plasma (CCP) discharge. As analysis of the discharge geometry is essential to understanding CCP deposition, the effect of electrode spacing on the two-dimensional distributions of electrons, ions, and metastable and radical molecules was analyzed numerically using a fluid model. The simulation shows that the spatial variations in the ionization rates near the sheath become more obvious as the electrode spacing increases. In addition, as molecule-molecule gas-phase reactions are significantly affected by the local residence time, large electrode spacings are associated with significant volumetric losses for positive ions. Consequently, an increase of the electrode spacing leads axial density profiles of ions to change from bell shaped to double humped. However, NH{sub 4}{sup +} persistently maintains a bell-shaped axial density profile regardless of the degree of electrode spacing. We set the mole fraction of NH{sub 3} to only 1% of the total flow at the inlet, but NH{sub 4}{sup +} is the most abundant positive ion at the large electrode spacings. As the gas flow can transport the radicals around the space between the electrodes, we found that radical density distribution shifts toward the grounded electrode. The shift becomes pronounced as the electrode spacing increases. Finally, to validate our model, we compared the calculated deposition rate profile with the experimental data obtained along the wafer radius. According to our numerical results, the SiN{sub x}H{sub y} deposition rate decreases by approximately 16% when the electrode spacing increases from 9 to 20 mm.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Effect of driving voltages in dual capacitively coupled radio frequency plasma: A study by nonlinear global model

On the basis of nonlinear global model, a dual frequency capacitively coupled radio frequency plasma driven by 13.56 MHz and 27.12 MHz has been studied to investigate the influences of driving voltages on the generation of dc self-bias and plasma heating. Fluid equations for the ions inside the plasma sheath have been considered to determine the voltage-charge relations of the plasma sheath. Geometrically symmetric as well as asymmetric cases with finite geometrical asymmetry of 1.2 (ratio of electrodes area) have been considered to make the study more reasonable to experiment. The electrical asymmetry effect (EAE) and finite geometrical asymmetry is found to work differently in controlling the dc self-bias. The amount of EAE has been primarily controlled by the phase angle between the two consecutive harmonics waveforms. The incorporation of the finite geometrical asymmetry in the calculations shift the dc self-bias towards negative polarity direction while increasing the amount of EAE is found to increase the dc self-bias in either direction. For phase angle between the two waveforms ϕ = 0 and ϕ = π/2, the amount of EAE increases significantly with increasing the low frequency voltage, whereas no such increase in the amount of EAE is found with increasing high frequency voltage. In contrast to the geometrically symmetric case, where the variation of the dc self-bias with driving voltages for phase angle ϕ = 0 and π/2 are just opposite in polarity, the variation for the geometrically asymmetric case is different for ϕ = 0 and π/2. In asymmetric case, for ϕ = 0, the dc self-bias increases towards the negative direction with increasing both the low and high frequency voltages, but for the ϕ = π/2, the dc-self bias is increased towards positive direction with increasing low frequency voltage while dc self-bias increases towards negative direction with increasing high frequency voltage.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Capacitive and magnetoresistive origin of magnetodielectric effects in Sm-substituted spiral antiferromagnet BiMnFe{sub 2}O{sub 6}

BiMnFe{sub 2}O{sub 6} exhibits a spiral antiferromagnetic ordering below 212 K and a reentrant spin glass transition at 34 K. Further, magnetic and dielectric anomalies occur at the same temperature (T = 170 K) with a significant magnetodielectric effect. Upon substitution of Sm{sup 3+} for Bi{sup 3+} ions in Bi{sub 1−x}Sm{sub x}MnFe{sub 2}O{sub 6} (x = 0.1 and 0.2), the dielectric anomaly shifts to low temperatures (T = 135 and 72 K, respectively), whereas the magnetic anomaly develops into a weak ferromagnetism. For x = 0.2, the weak ferromagnetism occurs in a wide temperature range (90–201 K). Below 90 K, it undergoes a transition to an antiferromagnetic state. In contrast to the parent compound (x = 0), the magnetodielectric effect is observed both in the antiferromagnetic region (T < 90 K) with a maximum at the dielectric anomaly (72 K) and also in the weak ferromagnetic region. It has been shown that the magnetodielectric effect in the antiferromagnetic region has an intrinsic capacitive origin while that observed at the weak ferromagnetic region originates from magnetoresistance.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

A comparative study of capacitively coupled HBr/He, HBr/Ar plasmas for etching applications: Numerical investigation by fluid model

Fluid model has been applied to perform a comparative study of hydrogen bromide (HBr)/He and HBr/Ar capacitively coupled plasma discharges that are being used for anisotropic etching process. This model has been used to identify the most dominant species in HBr based plasmas. Our simulation results show that the neutral species like H and Br, which are the key player in chemical etching, have bell shape distribution, while ions like HBr{sup +}, Br{sup +}, which play a dominant rule in the physical etching, have double humped distribution and show peaks near electrodes. It was found that the dilution of HBr by Ar and/or He results in an increase in electron density and electron temperature, which results in more ionization and dissociation and hence higher densities of neutral and charged species can be achieved. The ratio of positive ion flux to the neutral flux increases with an increase in additive gas fraction. Compare to HBr/He plasma, the HBr/Ar plasma shows a maximum change in the ion density and flux and hence the etching rate can be considered in the ion-assisted and in the ion-flux etch regime in HBr/Ar discharge. The densities of electron and other dominant species in HBr/Ar plasma are higher than those of HBr/He plasma. The densities and fluxes of the active neutrals and positive ions for etching and subsequently chemical etching versus physical sputtering in HBr/Ar and HBr/He plasmas discharge can be controlled by tuning gas mixture ratio and the desire etching can be achieved.

74 ATOMIC AND MOLECULAR PHYSICS↗

Experimental investigations of electron heating dynamics and ion energy distributions in capacitive discharges driven by customized voltage waveforms

Capacitively coupled radio frequency plasmas driven by customized voltage waveforms provide enhanced opportunities to control process-relevant energy distributions of different particle species. Here, we present an experimental investigation of the spatio-temporal electron heating dynamics probed by Phase-Resolved Optical Emission Spectroscopy (PROES) in an argon discharge driven by up to three consecutive harmonics of 13.56 MHz with individually adjustable harmonics' amplitudes and phases. PROES and voltage measurements are performed at fixed total voltage amplitudes as a function of the number of driving harmonics, their relative phases, and pressure to study the effects of changing the applied voltage waveform on the heating dynamics in collisionless and collisional regimes. Additionally, the ion energy distribution function (IEDF) is measured at low pressure. In this collisionless regime, the discharge is operated in the α-mode. The velocity of energetic electron beams generated by the expanding sheaths is found to be affected by the number of driving harmonics and their relative phases. This is understood based on the sheath dynamics obtained from a model that determines sheath voltage waveforms. The formation of the measured IEDFs is understood and found to be directly affected by the observed changes in the electron heating dynamics. It is demonstrated that the mean ion energy can be controlled by adjusting the harmonics' phases. In the collisional regime at higher pressures changing the number of harmonics and their phases at fixed voltage is found to induce heating mode transitions from the α- to the γ-mode. Finally, a method to use PROES as a non-invasive diagnostic to monitor and detect changes of the ion flux to the electrodes is developed.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Carbon electrode for desalination purpose in capacitive deionization

Carbon electrodes for desalination purpose have been successfully synthesized using activated carbon powder (BET surface area=700 – 1400 m{sup 2}/g), carbon black and polyvinyl alcohol (PVA) binder by cross-linking method with glutaric acid (GA) at 120 °C. The electrochemical properties of the carbon electrodes were analyzed using electrical impedance spectroscopy (EIS) and cyclic voltammetry (CV) whilst the physical properties were observed with scanning electron microscopy with energy dispersive X-ray spectroscopy (SEM/EDX). In order to assess the desalting performance, salt removal experiments were performed by constructing a capacitive deionization unit cell with five pairs of carbon electrodes. For each pair consisted of two parallel carbon electrodes separated by a spacer. Desalination and regeneration processes were also observed in the salt-removal experiments. The salt-removal experiments were carried out in single-pass mode using a solution with 0.1 M NaCl at a flow rate of 10 mL/min. A voltage of 3 V was applied to the cell for 60 minutes for both processes in desalination and regeneration. The result showed that the percentage value of the salt-removal was achieved at 20%.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Capacitive radio frequency discharges with a single ring-shaped narrow trench of various depths to enhance the plasma density and lateral uniformity

Spatial structures of the electron density and temperature in ring-shaped hollow cathode capacitive rf plasma with a single narrow trench of 2 mm width have been investigated at various trench depths of D = 5, 8, 10, 12, and 15 mm. It is found that the plasma density is increased in the presence of the trench and that the radial profile of the plasma density has a peak around the narrow hollow trench near the cathode. The density becomes uniform further away from the cathode at all trench depths, whereas the electron temperature distribution remains almost uniform. The measured radial profiles of the plasma density are in good agreement with a theoretical diffusion model for all the trench depths, which explains the local density increase by a local enhancement of the electron heating. Under the conditions investigated, the trench of 10 mm depth is found to result in the highest plasma density at various axial and radial positions. The results show that the radial uniformity of the plasma density at various axial positions can be improved by using structured electrodes of distinct depths rather than planar electrodes.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Slope and amplitude asymmetry effects on low frequency capacitively coupled carbon tetrafluoride plasmas

We report investigations of capacitively coupled carbon tetrafluoride (CF{sub 4}) plasmas excited with tailored voltage waveforms containing up to five harmonics of a base frequency of 5.5 MHz. The impact of both the slope asymmetry, and the amplitude asymmetry, of these waveforms on the discharge is examined by combining experiments with particle-in-cell simulations. For all conditions studied herein, the discharge is shown to operate in the drift-ambipolar mode, where a comparatively large electric field in the plasma bulk (outside the sheaths) is the main mechanism for electron power absorption leading to ionization. We show that both types of waveform asymmetries strongly influence the ion energy at the electrodes, with the particularity of having the highest ion flux on the electrode where the lowest ion energy is observed. Even at the comparatively high pressure (600 mTorr) and low fundamental frequency of 5.5 MHz used here, tailoring the voltage waveforms is shown to efficiently create an asymmetry of both the ion energy and the ion flux in geometrically symmetric reactors.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Kinetic interpretation of resonance phenomena in low pressure capacitively coupled radio frequency plasmas

Low pressure capacitive radio frequency (RF) plasmas are often described by equivalent circuit models based on fluid approaches that predict the self-excitation of resonances, e.g., high frequency oscillations of the total current in asymmetric discharges, but do not provide a kinetic interpretation of these effects. In fact, they leave important questions open: How is current continuity ensured in the presence of energetic electron beams generated by the expanding sheaths that lead to a local enhancement of the conduction current propagating through the bulk? How do the beam electrons interact with cold bulk electrons? What is the kinetic origin of resonance phenomena? Based on kinetic simulations, we find that the energetic beam electrons interact with cold bulk electrons (modulated on a timescale of the inverse local electron plasma frequency) via a time dependent electric field outside the sheaths. This electric field is caused by the electron beam itself, which leaves behind a positive space charge, that attracts cold bulk electrons towards the expanding sheath. The resulting displacement current ensures current continuity by locally compensating the enhancement of the conduction current. The backflow of cold electrons and their interaction with the nonlinear plasma sheath cause the generation of multiple electron beams during one phase of sheath expansion and contribute to a strongly non-sinusoidal RF current. These kinetic mechanisms are the basis for a fundamental understanding of the electron power absorption dynamics and resonance phenomena in such plasmas, which are found to occur in discharges of different symmetries including perfectly symmetric plasmas.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Quantum mechanics capacitance molecular mechanics modeling of core-electron binding energies of methanol and methyl nitrite on Ag(111) surface

We study a newly devised quantum mechanics capacitance molecular mechanics (QMCMM) method for the calculation of core-electron binding energies in the case of molecules adsorbed on metal surfaces. This yet untested methodology is applied to systems with monolayer of methanol/methyl nitrite on an Ag(111) surface at 100 K temperature. It was found out that the studied C, N, and O 1s core-hole energies converge very slowly as a function of the radius of the metallic cluster, which was ascribed to build up of positive charge on the edge of the Ag slab. Further analysis revealed that an extrapolation process can be used to obtain binding energies that deviated less than 0.5 eV against experiments, except in the case of methanol O 1s where the difference was as large as 1.8 eV. Additional QM-cluster calculations suggest that the latter error can be connected to the lack of charge transfer over the QM–CMM boundary. Thus, the results indicate that the QMCMM and QM-cluster methods can complement each other in a holistic picture of molecule-adsorbate core-ionization studies, where all types of intermolecular interactions are considered.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

A uniaxial stress capacitive dilatometer for high-resolution thermal expansion and magnetostriction under multiextreme conditions

Thermal expansion and magnetostriction are directional dependent thermodynamic quantities. For the characterization of novel quantum phases of matter, it is required to study materials under multi-extreme conditions, in particular, down to very low temperatures, in very high magnetic fields or under high pressure. We developed a miniaturized capacitive dilatometer suitable for temperatures down to 20 mK and usage in high magnetic fields, which exerts a large spring force between 40 to 75 N on the sample. This corresponds to a uniaxial stress up to 3 kbar for a sample with cross section of (0.5 mm){sup 2}. We describe design and performance test of the dilatometer which resolves length changes with high resolution of 0.02 Å at low temperatures. The miniaturized device can be utilized in any standard cryostat, including dilution refrigerators or the commercial physical property measurement system.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Symmetry breaking in high frequency, symmetric capacitively coupled plasmas

Two radially propagating surface wave modes, “symmetric,” in which the upper and lower axial sheath fields ( E z ) are aligned, and “anti-symmetric,” in which they are opposed, can exist in capacitively coupled plasma (CCP) discharges. For a symmetric (equal electrode areas) CCP driven symmetrically, we expected to observe only the symmetric mode. Instead, we find that when the applied rf frequency f is above or near an anti-symmetric spatial resonance, both modes can exist in combination and lead to unexpected non-symmetric equilibria. We use a fast 2D axisymmetric fluid-analytical code to study a symmetric CCP reactor at low pressure (7.5 mTorr argon) and low density (~3 × 10 15 m -3 ) in the frequency range of f = 55 to 100 MHz which encompasses the first anti-symmetric spatial resonance frequency f a but is far below the first symmetric spatial resonance f s . For lower frequencies such that f is well below f a> , the symmetric CCP is in a stable symmetric equilibrium, as expected, but at higher frequencies such that f is near or greater than f a , a non-symmetric equilibrium appears which may be stable or unstable. In our study, we develop a nonlinear lumped circuit model of the symmetric CCP to better understand these unexpected results, indicating that the proximity to the anti-symmetric spatial resonance allows self-exciting of the anti-symmetric mode even in a symmetric system. The circuit model results agree well with the fluid simulations. A linear stability analysis of the symmetric equilibrium describes a transition with increasing frequency from stable to unstable.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Demonstration of distributed capacitance compensation in a metal-insulator-metal infrared rectenna incorporating a traveling-wave diode

We experimentally demonstrate that the transmission line impedance of traveling-wave diodes can circumvent resistance-capacitance time-constant limitations of metal-insulator-metal diodes in rectennas operating at optical frequencies. We fabricated low resistance (380 Ω ) and moderate responsivity (0.46 A/W) metal-insulator-metal traveling-wave diodes. When a rectenna incorporating the traveling-wave diode was illuminated with 10.6 μ m radiation, it produced a peak system responsivity of 130 μ A/W and a detectivity of 1.0 × 10 4 Jones. These results agree with the simulated device performance and exceed the response of an equivalent lumped-element metal-insulator-metal rectenna.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Similarity law and frequency scaling in low-pressure capacitive radio frequency plasmas

We verify the similarity law (SL) and show a violation of frequency scaling (f-scaling) in low-pressure capacitive radio frequency (rf) plasmas via fully kinetic particle-in-cell simulations. The SL scaling relations for electron density and electron power absorption are first confirmed in similar rf discharges. Based on these results, with only the driving frequency varied, the f-scaling for electron density is also validated, showing almost the same trend as the SL scaling, across most of the frequency regime. However, violations of the f-scaling are observed at lower frequencies, which are found to be relevant to the electron heating mode transition from stochastic to Ohmic heating. Electron kinetic invariance is illustrated for the SL and f-scaling being valid, respectively, whereas the electron kinetic variation is observed when the f-scaling is violated.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Electronic structure of epitaxially grown and regrown GaN pn junctions characterized by scanning Kelvin probe and capacitance microscopy

Epitaxial regrowth of GaN pn junctions is a key technology for realization of a variety of high-performance GaN power electronic devices. However, the regrowth process can introduce impurities and defects that degrade a device’s performance. Here, we show that scanning Kelvin probe force microscopy and scanning capacitance microscopy can be used in a cross-sectional geometry to probe dopant distributions and an electronic structure in epitaxially grown GaN pn junctions. These measurements enable profiling of potential and dopant distributions across GaN pn junctions produced by uninterrupted epitaxial growth and by regrowth on an etched surface. Clear differences are observed in comparisons to the electronic structure of these two types of junctions that can be correlated with results of complementary characterization of dopant distributions reported for similarly grown structures. These measurements also suggest the presence of defects in etch-and-regrow pn junction structures that extend nearly 1 μm below the regrown interface.

Kim, Tae-Hyeon (ORCID:0000000341530617)↗

Investigating the effects of electron bounce-cyclotron resonance on plasma dynamics in capacitive discharges operated in the presence of a weak transverse magnetic field

Recently, Patil et al. [Phys. Rev. Res. 4, 013059 (2022)] have reported the existence of an enhanced operating regime when a low-pressure (5 mTorr) capacitively coupled discharge (CCP) is driven by a very high radio frequency (60 MHz) source in the presence of a weak external magnetic field applied parallel to its electrodes. Their particle-in-cell simulations show that a significantly higher bulk plasma density and ion flux can be achieved at the electrode when the electron cyclotron frequency equals half of the applied radio frequency for a given fixed voltage. In the present work, we take a detailed look at this phenomenon and further delineate the effect of this “electron bounce-cyclotron resonance (EBCR)” on the electron and ion dynamics of the system. We find that the ionization collision rate and stochastic heating are maximum under resonance condition. The electron energy distribution function also indicates that the population of tail-end electrons is highest for the case where EBCR is maximum. Formation of electric field transients in the bulk plasma region is also seen at lower values of applied magnetic field. Finally, we demonstrate that the EBCR-induced effect is a low-pressure phenomenon and weakens as the neutral gas pressure increases. The potential utility of this effect to advance the operational performance of CCP devices for industrial purposes is discussed in this report.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Direct implicit and explicit energy-conserving particle-in-cell methods for modeling of capacitively coupled plasma devices

Achieving large-scale kinetic modeling is a crucial task for the development and optimization of modern plasma devices. With the trend of decreasing pressure in applications, such as plasma etching, kinetic simulations are necessary to self-consistently capture the particle dynamics. The standard, explicit, electrostatic, momentum-conserving particle-in-cell method suffers from restrictive stability constraints on spatial cell size and temporal time step, requiring resolution of the electron Debye length and electron plasma period, respectively. This results in a very high computational cost, making the technique prohibitive for large volume device modeling. We investigate the direct implicit algorithm and the explicit energy conserving algorithm as alternatives to the standard approach, both of which can reduce computational cost with a minimal (or controllable) impact on results. These algorithms are implemented into the well-tested EDIPIC-2D and LTP-PIC codes, and their performance is evaluated via 2D capacitively coupled plasma discharge simulations. The investigation reveals that both approaches enable the utilization of cell sizes larger than the Debye length, resulting in a reduced runtime, while incurring only minor inaccuracies in plasma parameters. The direct implicit method also allows for time steps larger than the electron plasma period; however, care must be taken to avoid numerical heating or cooling. It is demonstrated that by appropriately adjusting the ratio of cell size to time step, it is possible to mitigate this effect to an acceptable level.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗