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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 541 records · Page 30
All sourcesNASA NTRSDOE OSTI
NASA NTRS1986

Spatial resolution and nature of defects produced by low-energy proton irradiation of GaAs solar cells

AlGaAs/GaAs solar cells with about 0.5-micron-thick Al(0.85)Ga(0.15)As window layers were irradiated using isotropic and normal incidence protons having energies between 50 and 500 keV with fluences up to 1 x 10 to the 12th protons/sq cm. Although the projected range for these protons varies from 0 to more than 4.5 microns, the recombination losses due to the irradiation-induced defects were observed to be maximum in the vicinity of the AlGaAs/GaAs interface and the space-charge region irrespective of the proton energy. This was found by analyzing spectral response measurements. The results are explained by using a model in which the interaction of as-grown dislocations with irradiation-induced point defects is considered.

Kachare, R.↗
NASA NTRS1988

Sizing Dye-Penetrant Indications Of Defects

Sizes of cracks and holes viewed through borescope measured. Reference chart makes it possible to estimate sizes of borescope-observed defects on inner walls of tubes or otherwise hidden. Used both for round defects like pits or pores and for elongated ones like cracks.

Molina, Orlando G.↗
NASA NTRS1988

Minority-carrier lifetime analysis of silicon epitaxy and bulk crystals with nonuniformly distributed defects

Existing analyses of the pulsed response of an MOS capacitor for minority-carrier lifetime determination result in a lifetime value averaged over most of the depletion region width. In this report, an analysis of MOS C-t data is presented that enables minority-carrier generation lifetime to be plotted as a function of depletion region depth. The technique is shown to be useful for samples with bulk or buried interfacial layer defects that have defect-free surfaces. Data are presented for intrinsically gettered bulk crystals and extrinsically gettered Si(2-pct Ge) epitaxial layers with misfit dislocations. In addition, for samples that do have uniform lifetimes, the measurement time required for determining carrier lifetime has been reduced by more than an order of magnitude.

Radzimski, Zbignew↗
NASA NTRS1988

Influence of substrate misorientation on defect and impurity incorporation in GaAs/AlGaAs heterostructures grown by molecular-beam epitaxy

GaAS/AlGaAs heterostructures have been grown by molecular-beam epitaxy on GaAs substrates intentionally oriented (tilted) a few degrees (0-6.5) off the (001) plane towards either (111)A, (111)B, or (011). It was observed that the 4-K photoluminescence and low-field electron transport properties of these structures may be functions of the substrate tilt angle and tilt direction, depending on the concentration of impurities incorporated during growth. A substrate tilt during molecular-beam epitaxy is observed to have the largest effect on these properties when the background impurity concentration in the molecular-beam epitaxial machine is high. This supports the contention that the observed changes in material characteristics are due to differences in the incorporation of defects and impurities. The incorporation of defects and impurities are reduced by using substrates tilted toward (111)A, in comparison to nominally flat (001) substrates or substrates tilted toward (111)B.

Radulescu, D. C.↗
NASA NTRS1989

Improved defect analysis of Gallium Arsenide solar cells using image enhancement

A new technique has been developed to capture, digitize, and enhance the image of light emission from a forward biased direct bandgap solar cell. Since the forward biased light emission from a direct bandgap solar cell has been shown to display both qualitative and quantitative information about the solar cell's performance and its defects, signal processing techniques can be applied to the light emission images to identify and analyze shunt diodes. Shunt diodes are of particular importance because they have been found to be the type of defect which is likely to cause failure in a GaAs solar cell. The presence of a shunt diode can be detected from the light emission by using a photodetector to measure the quantity of light emitted at various current densities. However, to analyze how the shunt diodes affect the quality of the solar cell the pattern of the light emission must be studied. With the use of image enhancement routines, the light emission can be studied at low light emission levels where shunt diode effects are dominant.

Kilmer, Louis C.↗
NASA NTRS1989

Ballistic-electron-emission microscopy of subsurface defects at the Au-GaAs(100) interface

The application of ballistic-electron-emission microscopy (BEEM) to a study of the influence of GaAs(100) substrate conditions on the formation of a multidefect structure at the Au-GaAs(100) Schottky barrier interface is described. Interfaces prepared on both melt-grown GaAs(100) wafer substrates and MBF-deposited GaAs(100) buffer layers are considered. As a comparison to the study of Au-GaAs(100) interfaces, BEEM imaging is performed on Au-Si(100) interfaces. It is noted that Au-GaAs(100) interface formation is relatively insensitive to the effects of substrate surface condition and substrate bulk defect density, and that the combination of BEEM imaging and BEEM spectroscopy indicates that the heterogeneous interface defects are the result of diffusion between the Schottky barrier electrodes.

Hecht, M. H.↗
NASA NTRS1991

Molecules with enhanced electronic polarizabilities based on defect-like states in conjugated polymers

Highly conjugated organic polymers typically have large non-resonant electronic susceptibilities, which give the molecules unusual optical properties. To enhance these properties, defects are introduced into the polymer chain. Examples include light doping of the conjugated polymer and synthesis, conjugated polymers which incorporate either electron donating or accepting groups, and conjugated polymers which contain a photoexcitable species capable of reversibly transferring its electron to an acceptor. Such defects in the chain permit enhancement of the second hyperpolarizability by at least an order of magnitude.

Beratan, David N.↗
NASA NTRS1990

Dissociation of O(2-)2 defects into paramagnetic O(-) in wide band-gap insulators - A magnetic susceptibility study of magnesium oxide

The magnetic susceptibility of single-crystal MgO has been measured in the temperature range 300-1000 K, using a Faraday balance. The high-purity crystal (less than 100 ppm transition metals), grown from the melt in a H2O-containing atmosphere, was found to be paramagnetic due to the presence of defects on the O(2-) sublattice. The defects derive from OH(-) introduced into the MgO matrix by the dissolution of traces of H2O during crystal growth. The OH(-) converts into O(2-)2 and H2. Each O(2-)2 represents two coupled, spin-paired O(-) states. The observed strongly temperature-dependent paramagnetism can be described by three contributions that overlay the intrinsic diamagnetism of MgO and arise from the low level of transition-metal impurities, O(-) generated by 0(2-)2 dissociation, and O(-) states trapped by quenching from high temperatures from previous experiments.

Batllo, F.↗
NASA NTRS1990

A defect stream function formulation for compressible turbulent boundary layers

Progress to date on the development of a method for turbulent, wall-bounded flow which uses the defect stream function formulation in the outer layer and an analytic law of the wall and wake formulation in the inner region is reviewed. This two-formulation approach avoids the need to computationally resolve the high-gradient inner layer. One of the most appealing recent developments is the transformation of the compressible governing equation for the defect stream function into a linear, second-order differential equation which has analytic solutions for many problems of practical interest. Numerical and analytic results for incompressible and compressible flows are shown to be in excellent agreement with experimental results. In this paper the two-formulation approach is applied to primitive-variable computations. Excellent comparisons with experiment are presented for two compressible flat plate flows.

Barnwell, Richard W.↗
NASA NTRS1992

Near-infrared cathodoluminescence imaging of defect distributions in In(0.2)Ga(0.8)As/GaAs multiple quantum wells grown on prepatterned GaAs

The defect distribution in a highly strained In(0.2)Ga(0.8)As/GaAs multiple-quantum-well (MQW) structure grown on a patterned GaAs substrate is examined with cathodoluminescence imaging and spectroscopy in the near IR. By spatially correlating the luminescence arising from the MQW exciton recombination (950 nm) with the longer wavelength (1000-1200 nm) luminescence arising from the defect-induced recombination, it is demonstrated that it is possible to determine the regions of highest film quality in both the mesa and valley regions. The present approach enables a judicious determination of the optimal regions to be used for active pixels in InGaAs/GaAs spatial light modulators.

Rich, D. H.↗
NASA NTRS1992

Leveling coatings for reducing the atomic oxygen defect density in protected graphite fiber epoxy composites

Pinholes or other defect sites in a protective oxide coating provide pathways for atomic oxygen in low Earth orbit to reach underlying material. One concept for enhancing the lifetime of materials in low Earth orbits is to apply a leveling coating to the material prior to applying any reflective and protective coatings. Using a surface tension leveling coating concept, a low viscosity epoxy was applied to the surface of several composite coupons. A protective layer of 1000 A of SiO2 was deposited on top of the leveling coating, and the coupons were exposed to an atomic oxygen environment in a plasma asher. Pinhole populations per unit area were estimated by counting the number of undercut sites observed by scanning electron microscopy. Defect density values of 180,000 defects/sq cm were reduced to about 1000 defects/sq cm as a result of the applied leveling coating. These improvements occur at a mass penalty of about 2.5 mg/sq cm.

Jaworske, D. A.↗
NASA NTRS1992

Leveling coatings for reducing the atomic oxygen defect density in protected graphite fiber epoxy composites

Pinholes or other defect sites in a protective oxide coating provide pathways for atomic oxygen in low Earth orbit to reach underlying material. One concept of enhancing the lifetime of materials in low Earth orbit is to apply a leveling coating to the material prior to applying any reflective and protective coatings. Using a surface tension leveling coating concept, a low viscosity epoxy was applied to the surface of several composite coupons. A protective layer of 1000 A of SiO2 was deposited on top of the leveling coating, and the coupons were exposed to an atomic oxygen environment in a plasma asher. Pinhole populations per unit area were estimated by counting the number of undercut sites observed by scanning electron microscopy. Defect density values of 180,000 defects/sq cm were reduced to about 1000 defects/sq cm as a result of the applied leveling coating. These improvements occur at a mass penalty of about 2.5 mg/sq cm.

Jaworske, D. A.↗
NASA NTRS1992

Defect-mediated spatial complexity and chaos in a phase-conjugate resonator

We have studied the spatiotemporal dynamics of a phase-conjugate resonator. The cavity Fresnel number is used to vary the degree of transverse confinement of the system. The generation and subsequent motion of the phase defects in the wave front are seen to mediate the system's dynamics. The number of defects and the complexity of their motion increases as the confinement is relaxed, leading the system through a sequence of bifurcations and eventually to chaos.

Indebetouw, Guy↗
NASA NTRS1993

Diminishing sign anomaly and scaling behavior of the mixed-state Hall resistivity in Tl2Ba2Ca2Cu3O10 films containing columnar defects

The issues of sign reversal of the Hall voltage and scaling between longitudinal (rho(xx)) and Hall (rho(xy)) resistivities are studied in Tl2Ba2Ca2Cu3O10 films in which the vortex dynamics is drastically changed by flux pinning at heavy-ion-irradiation-induced linear defects. While the sign anomaly diminishes with increasing defect concentration, the power law rho(xy) is approximately equal to rho(xx) exp beta, beta = 1.85 +/- 0.1, holds even after irradiation. This result shows that the scaling is a universal feature of the mixed state in this system. The sign anomaly, on the other hand, is not consistent with a model that invokes pinning-induced backflow in the vortex core as the mechanism for this effect.

Budhani, R. C.↗
NASA NTRS1993

Elastic interactions of a fatigue crack with a micro-defect by the mixed boundary integral equation method

In this paper, the mixed boundary integral equation method is developed to study the elastic interactions of a fatigue crack and a micro-defect such as a void, a rigid inclusion or a transformation inclusion. The method of pseudo-tractions is employed to study the effect of a transformation inclusion. An enriched element which incorporates the mixed-mode stress intensity factors is applied to characterize the singularity at a moving crack tip. In order to evaluate the accuracy of the numerical procedure, the analysis of a crack emanating from a circular hole in a finite plate is performed and the results are compared with the available numerical solution. The effects of various micro-defects on the crack path and fatigue life are investigated. The results agree with the experimental observations.

Lua, Yuan J.↗
NASA NTRS1991

Performance of defect-tolerant set-associative cache memories

The increased use of on-chip cache memories has led researchers to investigate their performance in the presence of manufacturing defects. Several techniques for yield improvement are discussed and results are presented which indicate that set-associativity may be used to provide defect tolerance as well as improve the cache performance. Tradeoffs between several cache organizations and replacement strategies are investigated and it is shown that token-based replacement may be a suitable alternative to the widely-used LRU strategy.

Frenzel, J. F.↗
NASA NTRS1993

Correct CMOS IC defect models for quality testing

Leading edge, high reliability, and low escape CMOS IC test practices have now virtually removed the stuck-at fault model and replaced it with more defect-orientated models. Quiescent power supply current testing (I(sub DDQ)) combined with strategic use of high speed test patterns is the recommended approach to zero defect and high reliability testing goals. This paper reviews the reasons for the change in CMOS IC test practices and outlines an improved CMOS IC test methodology.

Soden, Jerry M.↗
NASA NTRS1992

Defect-sensitivity analysis of an SEU immune CMOS logic family

Fault testing of resistive manufacturing defects is done on a recently developed single event upset immune logic family. Resistive ranges and delay times are compared with those of traditional CMOS logic. Reaction of the logic to these defects is observed for a NOR gate, and an evaluation of its ability to cope with them is determined.

Ingermann, Erik H.↗