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At least 541 records · Page 30

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NASA NTRS1972

Hardening electronic devices against very high total dose radiation environments

The possibilities and limitations of hardening silicon semiconductor devices to the high neutron and gamma radiation levels and greater than 10 to the eighth power rads required for the NERVA nuclear engine development are discussed. A comparison is made of the high dose neutron and gamma hardening potential of bipolar, metal insulator semiconductors and junction field effect transistors. Experimental data is presented on device degradation for the high neutron and gamma doses. Previous data and comparisons indicate that the JFET is much more immune to the combined neutron displacement and gamma ionizing effects than other transistor types. Experimental evidence is also presented which indicates that p channel MOS devices may be able to meet the requirements.

Buchanan, B.↗

NASA NTRS1971

Analog tree-organized multiplexer

An analog tree-organized multiplexer (ATOM) which is intended for use in the telemetry system of an interplanetary spacecraft is designed. The ATOM will be fabricated by a monolithic, dielectric isolation process, and will contain silicon junction field effect transistors (JFET) as the active elements. The effect of the radiation environment on the performance of the ATOM is analyzed. The result indicates that the expected radiation environment will cause only minor changes in the preradiation characteristics of ATOM. The JFET in the ATOM is designed to meet the electrical requirements when fabricated by either the double poly-dielectric isolation process or the raised dielectric isolation process. The effect of the heat treatment required for the dielectric isolation process on the diffusion profile of the JFET is described. The layout of the ATOM circuit for fabrication by either the double poly or raised dielectric isolation process is also given.

Crabbe, J. S.↗

NASA NTRS1990

Development of improved pyroelectric detectors. Measurements of pyroelectric material characteristics and FET characteristics

Research was undertaken to improve the detectivity of the pyroelectric detector with the ultimate goal of operation at or near the temperature-noise limit. Two general areas of investigation were undertaken: (1) to improve responsivity through the use of new materials; and (2) to reduce noise through improved field effect transistor characteristics, and improved electroding of the pyroelectric material. FET's are being obtained from various manufacturers, evaulated, and selected units tested for evaluation of characteristics critical to their use as preamplifiers with pyroelectric detectors.

Weiner, S.↗

NASA NTRS1972

Development of improved pyroelectric detectors: Measurements of pyroelectric material characteristics and FET characteristics

The object of this program is to improve the detectivity of the pyroelectric detector with the ultimate goal of operation at or near the temperature noise limit. Two general areas of investigation are undertaken. The first is to improve responsivity through the use of new materials. The second is directed toward reduction of noise and will be effected with improved field effect transistor characteristics, and improved electroding of the pyroelectric material. The review of the literature on pyroelectric materials continues. From this, several materials have already been selected for investigation, and several were tested.

Weiner, S.↗

NASA NTRS1972

Acoustic-wave detection via a piezoelectric field-effect transducer.

An oriented piezoelectric film has been incorporated in the insulator region of a silicon insulated-gate field-effect transistor to provide a sensitive high-frequency strain transducer. With this device, strains as low as 10 to the -8th power have been detected, and gauge factors of roughly 7000 have been attained for applied ac strains at 5.6 MHz.

Greeneich, E. W.↗

NASA NTRS1970

Effect of filtering on noise and timing in nuclear particle detection

The relations between signal shaping, noise, and timing resolution in nuclear particle detection systems are examined in this paper. Mathematical analysis of five commonly used types of filters leads to numerical results for system noise components arising from sources in the preamplifier, detector, and bias resistors. These results are presented in the form of design curves for the various filters, showing the dependence of each output noise component on both the magnitude of the noise sources and the filter time constants. Three of the filters considered are simple RC types; the remaining two are combinations of delay lines and RC elements. The quantitative calculations specifically assume a silicon detector and a field-effect-transistor preamplifier. Those filters that exhibit bipolar step response are analyzed in terms of crossover timing resolution, based on the earlier noise calculations. Again, the results are summarized in sets of design curves for each filter. Finally, the comparative performance of the various filter types is discussed, and specific examples are given.

Gary, S. A.↗

NASA NTRS1973

Self-tuning bandpass filter

An electronic filter is described which simultaneously maintains a constant bandwidth and a constant center frequency gain as the input signal frequency varies, and remains self-tuning to that center frequency over a decade range. The filter utilizes a field effect transistor (FET) as a voltage variable resistance in the bandpass frequency determining circuit. The FET is responsive to a phase detector to achieve self-tuning.

Deboo, G. J.↗

NASA NTRS1974

Full wave modulator-demodulator amplifier apparatus

A full-wave modulator-demodulator apparatus is described including an operational amplifier having a first input terminal coupled to a circuit input terminal, and a second input terminal alternately coupled to the circuit input terminal. A circuit is ground by a switching circuit responsive to a phase reference signal and the operational amplifier is alternately switched between a non-inverting mode and an inverting mode. The switching circuit includes three field-effect transistors operatively associated to provide the desired switching function in response to an alternating reference signal of the same frequency as an AC input signal applied to the circuit input terminal.

Black, J. M.↗

NASA NTRS1972

Development of an image converter of radical design

A long term investigation of thin film sensors, monolithic photo-field effect transistors, and epitaxially diffused phototransistors and photodiodes to meet requirements to produce acceptable all solid state, electronically scanned imaging system, led to the production of an advanced engineering model camera which employs a 200,000 element phototransistor array (organized in a matrix of 400 rows by 500 columns) to secure resolution comparable to commercial television. The full investigation is described for the period July 1962 through July 1972, and covers the following broad topics in detail: (1) sensor monoliths; (2) fabrication technology; (3) functional theory; (4) system methodology; and (5) deployment profile. A summary of the work and conclusions are given, along with extensive schematic diagrams of the final solid state imaging system product.

Irwin, E. L.↗

NASA NTRS1974

Integrated P-channel MOS gyrator

A gyrator circuit is described which is of the conventional configuration of two amplifiers in a circular loop, one producing zero phase shift and the other producing 180 phase reversal, in a circuit having medium Q composed of all field effect transistors of the same conductivity type. The current source to each gyrator amplifier comprises an amplifier which responds to changes in current, with the amplified signals feed back so as to limit current. The feedback amplifier has a large capacitor connected to bypass high frequency components, thereby stabilizing the output. The design makes possible fabrication of circuits with transistors of only one conductivity type, providing economies in manufacture and use.

Hochmair, E. S.↗

NASA NTRS1975

Measurement of trap density in dielectric film

Method uses basic circuit to examine quality and trap density of film used in insulated gate field effect transistors. Data are measured as function of performance and life expectancy.

Guisinger, J. E.↗

NASA NTRS1975

Instrumentation for measurement of aircraft noise and sonic boom

A jet aircraft noise and sonic boom measuring device which converts sound pressure into electric current is described. An electric current proportional to the sound pressure level at a condenser microphone is produced and transmitted over a cable, amplified by a zero drive amplifier and recorded on magnetic tape. The converter is comprised of a local oscillator, a dual-gate field-effect transistor (FET) mixer and a voltage regulator/impedance translator. A carrier voltage that is applied to one of the gates of the FET mixer is generated by the local oscillator. The microphone signal is mixed with the carrier to produce an electrical current at the frequency of vibration of the microphone diaphragm by the FET mixer. The voltage of the local oscillator and mixer stages is regulated, the carrier at the output is eliminated, and a low output impedance at the cable terminals is provided by the voltage regulator/impedance translator.

Zuckerwar, A. J.↗

NASA NTRS1975

Modulation linearization of a frequency-modulated voltage controlled oscillator, part 3

An analysis is presented for the voltage versus frequency characteristics of a varactor modulated VHF voltage controlled oscillator in which the frequency deviation is linearized by using the nonlinear characteristics of a field effect transistor as a signal amplifier. The equations developed are used to calculate the oscillator output frequency in terms of pertinent circuit parameters. It is shown that the nonlinearity exponent of the FET has a pronounced influence on frequency deviation linearity, whereas the junction exponent of the varactor controls total frequency deviation for a given input signal. A design example for a 250 MHz frequency modulated oscillator is presented.

Honnell, M. A.↗

NASA NTRS1974

Wide range multi-channel analog switch

A ten-channel analog switch has been developed as a sample and shape circuit for signals used as inputs to a logarithmic pulse height recording system. The circuit employs a field effect transistor as the switching element. Switching transients are reduced to approximately 2 mV by adding to the gated signal an inverted transient generated by an identical circuit with no signal applied. The circuit is linear to 2% from 3 mV to 10 V.

Levit, L. B.↗

NASA NTRS1977

Hybrid thin-film amplifier

Miniature amplifier for bioelectronic instrumentation consumes only about 100 mW and has frequency response flat to within 0.5 dB from 0.14 to 450 Hz. Device consists of five thin film substrates, which contain eight operational amplifiers and seven field-effect transistor dice.

Cleveland, G.↗

NASA NTRS1976

Method and apparatus for measurement of trap density and energy distribution in dielectric films

Trap densities in dielectric films are determined by tunnel injection measurements when the film is incorporated in an insulated-gate field effect transistor. Under applied bias to the transistor gate, carriers (electrons or holes) tunnel into traps in the dielectric film. The resulting space charge tends to change channel conductance. By feeding back a signal from the source contact to the gate electrode, channel conductance is held constant, and by recording the gate voltage as a function of time, trap density can be determined as a function of distance from the dielectric-semiconductor interface. The process is repeated with the gate bias voltage at different levels in order to determine the energy distribution of traps as a function of distance from the interface.

Maserjian, J.↗

NASA NTRS1976

Instrumentation for measuring aircraft noise and sonic boom

Improved instrumentation suitable for measuring aircraft noise and sonic booms is described. An electric current proportional to the sound pressure level at a condenser microphone is produced and transmitted over a cable and amplified by a zero drive amplifier. The converter consists of a local oscillator, a dual-gate field-effect transistor mixer, and a voltage regulator/impedance translator. The improvements include automatic tuning compensation against changes in static microphone capacitance and means for providing a remote electrical calibration capability.

Zuckerwar, A. J.↗

NASA NTRS1975

A 1.06 micrometer avalanche photodiode receiver

The development of a complete solid state 1.06 micron optical receiver which can be used in optical communications at data rates approaching 1.5 Gb/s, or in other applications requiring sensitive, short pulse detection, is reported. This work entailed both the development of a new type of heterojunction III-V semiconductor alloy avalanche photodiode and an extremely charge-sensitive wideband low noise preamp design making use of GaAs Schottky barrier-gate field effect transistors (GAASFET's) operating in in the negative-feedback transimpedance mode. The electrical characteristics of the device are described.

Eden, R. C.↗