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At least 541 records · Page 30

A Nitrogen-Doped Carbon Catalyst for Electrochemical CO 2 Conversion to CO with High Selectivity and Current Density

We report characterization of a non-precious metal-free catalyst for the electrochemical reduction of CO 2 to CO; namely, a pyrolyzed carbon nitride and multiwall carbon nanotube composite. This catalyst exhibits a high selectivity for production of CO over H 2 (approximately 98 % CO and 2 % H 2 ), as well as high activity in an electrochemical flow cell. The CO partial current density at intermediate cathode potentials (V=-1.46 V vs. Ag/AgCl) is up to 3.5× higher than state-of-the-art Ag nanoparticle-based catalysts, and the maximum current density is 90 mA cm -2 . The mass activity and energy efficiency (up to 48 %) were also higher than the Ag nanoparticle reference. Moving away from precious metal catalysts without sacrificing activity or selectivity may significantly enhance the prospects of electrochemical CO 2 reduction as an approach to reduce atmospheric CO 2 emissions or as a method for load-leveling in relation to the use of intermittent renewable energy sources.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Synthesis and Characterization of CuFe 2 O 4 Nano/Submicron Wire–Carbon Nanotube Composites as Binder-free Anodes for Li-Ion Batteries

Here, a series of one-dimensional CuFe 2 O 4 nano/sub-micron wires possessing different diameters, crystal phases, and crystal sizes have been successfully generated using a facile template-assisted co precipitation reaction at room temperature, followed by a short post-annealing process. The diameter and the crystal structure of the resulting CuFe 2 O4 (CFO) wires were judiciously tuned by varying the pore size of the template and the post-annealing temperature, respectively. Carbon nanotubes (CNTs) were incorporated to generate CFO-CNT binder-free anodes, and multiple characterization techniques were employed with the goal of delineating the relationships between electrochemical behavior and the properties of both the CFO wires (crystal phase, wire diameter, crystal size) and the electrode architecture (binder-free vs. conventionally prepared approaches). The study reveals several notable findings. First, the crystal phase (cubic or tetragonal) did not influence the electrochemical behavior in this CFO system. Second, regarding crystallite size and wire diameter, CFO wires with larger crystallite sizes exhibit improved cycling stability, while wires possessing smaller diameters exhibiting higher capacities. Finally, the electrochemical behavior is strongly influenced by the electrode architecture, with CFO-CNT binder-free electrodes demonstrating significantly higher capacities and cycling stability compared to conventionally prepared coatings. The mechanism(s) associated with the high capacities under low current density but limited electrochemical reversibility of CFO electrodes under high current density were probed via x-ray absorption spectroscopy (XAS) mapping with sub-micron spatial resolution for the first time. Results suggest that the capacity of the binder-free electrodes under high rate is limited by the irreversible formation of Cu 0 , as well as limited reduction of Fe 3+ , to Fe 2+ not Fe 0 . The results (1) shed fundamental insight into the reversibility of CuFe 2 O 4 materials cycled at high current density and (2) demonstrate that a synergistic effort to control both active material morphology and electrode architecture is an effective strategy for optimizing electrochemical behavior.

25 ENERGY STORAGE↗

Generation of high-density biskyrmions by electric current

Much interest has been focused on the manipulation of magnetic skyrmions, including the generation, annihilation, and motion behaviors, for potential applications in spintronics. We experimentally demonstrate that a high-density Bloch-type biskyrmion lattice in MnNiGa can be generated by applying electric current. It is revealed that the density of biskyrmions can be remarkably increased by increasing the electric current, in contrast to the scattered biskyrmions induced by a magnetic field alone. Furthermore, the transition from the ferromagnetic state to the stripe domain structure can be terminated by the electric current, leading to the biskyrmions dominated residual domain pattern. These biskyrmions in such residual domain structure are extremely stable at zero magnetic and electric fields and can further evolve into the high-density biskyrmion lattice over a temperature range from 100 to 330 K. Finally, our experimental findings open up a new pathway for the generation of skyrmion lattice by electric current manipulation.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

A viable dipole magnet concept with REBCO CORC ® wires and further development needs for high-field magnet applications

REBCO coated conductors maintain a high engineering current density above 16 T at 4.2 K. That fact will significantly impact markets of various magnet applications including high-field magnets for high-energy physics and fusion reactors. One of the main challenges for the high-field accelerator magnet is the use of multi-tape REBCO cables with high engineering current density in magnet development. Several approaches developing high-field accelerator magnets using REBCO cables are demonstrated. In this paper, we introduce an alternative concept based on the canted cos θ (CCT) magnet design using conductor on round core (CORC®) wires that are wound from multiple REBCO tapes with a Cu core. We report the development and test of double-layer three-turn CCT dipole magnets using CORC ® wires at 77 and 4.2 K. The scalability of the CCT design allowed us to effectively develop and demonstrate important magnet technology features such as coil design, winding, joints and testing with minimum conductor lengths. The test results showed that the CCT dipole magnet using CORC ® wires was a viable option in developing a REBCO accelerator magnet. One of the critical development needs is to increase the engineering current density of the 3.7 mm diameter CORC® wire to 540 A mm -2 at 21 T, 4.2 K and to reduce the bending radius to 15 mm. Furthermore, this would enable a compact REBCO dipole insert magnet to generate a 5 T field in a background field of 16 T at 4.2 K.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Over 15 MA/cm2 of critical current density in 4.8 µm thick, Zr-doped (Gd,Y)Ba2Cu3Ox superconductor at 30 K, 3T

An Advanced MOCVD (A-MOCVD) reactor was used to deposit 4.8µm thick (Gd,Y)BaCuO tapes with 15mol% Zr addition in a single pass. A record-high critical current density (Jc) of 15.11MA/cm2 has been measured over a bridge at 30K, 3T, corresponding to an equivalent (Ic) value of 8705A/12mm width. This corresponds to a lift factor in critical current of ~11 which is the highest ever reported to the best of author’s knowledge. The measured critical current densities at 3T (B||c) and 30, 40 and 50K, respectively, are 15.11, 9.70 and 6.26 MA/cm2, corresponding to equivalent Ic values of 8705, 5586 and 3606A/12mm and engineering current densities (Je) of 7068, 4535 and 2928A/mm2. The engineering current density (Je) at 40K, 3T is 7 times higher than that of the commercial HTS tapes available with 7.5mol% Zr addition. Such record-high performance in thick flms (>1µm) is a clear demonstration that growing thick REBCO flms with high critical current density (Jc) is possible, contrary to the usual fndings of strong Jc degradation with flm thickness. This achievement was possible due to a combination of strong temperature control and uniform laminar fow achieved in the A-MOCVD system, coupled with optimization of BaZrO3 nanorod growth parameters.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Evaluation of critical current density and residual resistance ratio limits in powder in tube Nb 3 Sn conductors

High critical current density (Jc) Nb 3 Sn A15 multifilamentary wires require a large volume fraction of small grain, superconducting A15 phase, as well as Cu stabilizer with high Residual Resistance Ratio (RRR) to provide electromagnetic stabilization and protection. In Powder-in-Tube (PIT) wires the unreacted Nb7.5wt.%Ta outer layer of the tubular filaments acts as a diffusion barrier and protects the interfilamentary Cu stabilizer from Sn contamination. A high RRR requirement generally imposes a restricted A15 reaction heat treatment (HT) to prevent localized full reaction of the filament that could allow Sn to reach the Cu. In this paper we investigate recent high quality PIT wires that achieve a J c (12 T, 4.2 K) up to ~2500 A/mm -2 and find that the minimum diffusion barrier thickness decreases as the filament aspect ratio increases from ~1 in the inner rings of filaments to 1.3 in the outer filament rings. We found that just 2-3 diffusion barrier breaches can degrade RRR from 300 to 150 or less. Using progressive etching of the Cu we also found that the RRR degradation is localized near the external filaments where deformation is highest. Consequently minimizing filament distortion during strand fabrication is important for reducing RRR degradation. The additional challenge of developing the highest possible J c must be addressed by forming the maximum fraction of high J c small-grain (SG) A15 and minimizing low J c large-grain (LG) A15 morphologies. Finally, in one wire we found that 15% of the filaments had a significantly enhanced SG/LG A15 ratio and no residual A15 in the core, a feature that opens a path to substantial J c improvement.

36 MATERIALS SCIENCE↗

The Influence of High Isostatic Pressure on Critical Current Density in C-Doped MgB{sub 2} Wires

This article reports the influence of isostatic pressure (from 0.1 MPa to 1.1 GPa), low annealing temperature of 570 {sup ∘}C, and annealing time for the formation of high-field pinning centers in 2% C-doped MgB{sub 2} wires. Measurements indicate that 1.1 GPa pressure significantly increases the density of high-field pinning centers below 20 K. However, lower pressure (0.6 GPa) slightly increases the density of high-field pinning centers. Increasing the annealing time from 120 to 210 min leads to a reduction of critical temperature (T{sub c}), irreversibility field (B{sub irr}), critical current density (J{sub c}), and upper critical field (B{sub c2}), suggesting that a long annealing time leads to a reduction of high-field pinning center density and the number of connections between superconducting grains. The high pressures and low annealing temperature lead to a high critical current density of 1000 A/mm{sup 2} in 7.2 T and 100 A/mm{sup 2} in 12.5 T at 4.2 K in MgB{sub 2} wires.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Electrochemical Healing of Dendrites in Garnet-Based Solid Electrolytes

Garnet oxides are a promising material family for solid-state batteries (SSBs). Dendrite formation in solid electrolytes critically limits the applicability of SSBs because of limiting Coulombic efficiency and power capability. In this study, the authors report operando electrochemical healing of dendrites in a garnet-based solid electrolyte (SE). Dendrites were deliberately formed at high operational current density (2 mA cm –2 ) beyond the critical current density (0.55 mA cm –2 ) of the used garnet SE. Electrochemical impedance spectroscopy and scanning electron microscopy were used to confirm dendrite growth in the SE. Dendrites were subsequently healed electrochemically via plating and stripping at 20 and 1 μA cm –2 current densities. Removal of dendrites was shown by an increase in bulk and interfacial resistance and a progressive increase in polarization during galvanostatic plating and stripping. High local current density at the dendrite tips was identified as the mechanism for preferentially removing dendrites electrochemically. The dendrite detection and healing methods discussed here are crucial for extending the life of SSBs.

25 ENERGY STORAGE↗

Angular dependence of critical current density and magnetoresistance of sputtered high-T(sub c)-films

The angular dependence of the critical current density and the magnetoresistance of high-T(sub c)-films in high and low magnetic fields and for different temperatures were measured to investigate the flux pinning and the superconducting properties. A comparison of the results for the different superconductors shows their increasing dependence on the angle Theta between the magnetic field and the c-axis of the film due to the anisotropy of the chosen superconductor. Furthermore the influence of the current direction to the Theta-rotation plane is discussed.

Geerkens, A.↗

Quadrupling the depairing current density in the iron-based superconductor SmFeAsO1–xHx

Abstract Iron-based 1111-type superconductors display high critical temperatures and relatively high critical current densities J c . The typical approach to increasing J c is to introduce defects to control dissipative vortex motion. However, when optimized, this approach is theoretically predicted to be limited to achieving a maximum J c of only ∼30% of the depairing current density J d , which depends on the coherence length and the penetration depth. Here we dramatically boost J c in SmFeAsO 1– x H x films using a thermodynamic approach aimed at increasing J d and incorporating vortex pinning centres. Specifically, we reduce the penetration depth, coherence length and critical field anisotropy by increasing the carrier density through high electron doping using H substitution. Remarkably, the quadrupled J d reaches 415 MA cm –2 , a value comparable to cuprates. Finally, by introducing defects using proton irradiation, we obtain high J c values in fields up to 25 T. We apply this method to other iron-based superconductors and achieve a similar enhancement of current densities.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Reducing Saturation-Current Density to Realize High-Efficiency Low-Bandgap Mixed Tin-Lead Halide Perovskite Solar Cells

We report the unsatisfactory performance of low-bandgap mixed tin (Sn)-lead (Pb) halide perovskite subcells has been one of the major obstacles hindering the progress of the power conversion efficiencies (PCEs) of all-perovskite tandem solar cells. By analyzing dark-current density and distribution, it is identified that charge recombination at grain boundaries is a key factor limiting the performance of low-bandgap mixed Sn-Pb halide perovskite subcells. It is further found that bromine (Br) incorporation can effectively passivate grain boundaries and lower the dark current density by two-three orders of magnitude. By optimizing the Br concentration, low-bandgap (1.272 eV) mixed Sn-Pb halide perovskite solar cells are fabricated with open-circuit voltage deficits as low as 0.384 V and fill factors as high as 75%. The best-performing device demonstrates a PCE of >19%. In conclusion, the results suggest an important direction for improving the performance of low-bandgap mixed Sn-Pb halide perovskite solar cells.

14 SOLAR ENERGY↗

Unprecedented Multifunctionality in 1D Nb 1- x Ta x S 3 Transition Metal Trichalcogenide Alloy

One-dimensional (1D) van der Waals materials, such as nanofibers or nanoribbons are considered as the future ultimate limit of downscaling for modern electrical and electrochemical devices. Here, for the first time, we successfully synthesize nanofibers of a solid solution transition metal trichalcogenide (TMTC), Nb 1-x Ta x S 3 , with outstanding electrical, thermal, and electrochemical characteristics rivaling the performance of the-state-of-the art materials for each application. This material shows nearly unchanged sheet resistance (≈740 Ω/sq -1 ) versus bending cycles tested up to 90 cycles, stable sheet resistance in ambient conditions tested up to 60 days, remarkably high electrical breakdown current density of ≈ 30 MA cm -2 , strong evidence of successive charge density wave (CDW) transitions, and outstanding thermal stability up to ≈900 K. Additionally, this material demonstrates excellent activity and selectivity for CO2 conversion to CO reaching ≈ 350 mA cm -2 at – 0.8 V vs RHE with an outstanding turnover frequency number of 25 for CO formation. It also exhibits an excellent performance in a high-rate Li-air battery with the specific capacity of 3000 mAhg -1 at a high current density of 0.3 mAcm -2 . This study uncovers the multifunctionality in 1D TMTC alloys for a wide range of high-impact applications and opens a new direction for the design of the next generation of low-dimensional materials with high performance.

36 MATERIALS SCIENCE↗

High-Performance Bulk MgB{sub 2} Superconductor Using Amorphous Nano-boron

MgB{sub 2} bulks were produced by in situ solid-state reaction in Ar gas using high-purity commercial powders of Mg metal and amorphous nano-B mixed in a fixed ratio of Mg:B = 1:2. Single-phase materials have been obtained and grain structure and its implications are reported. All samples were sintered at 775 °C for 3 h in Ar atmosphere. X-ray diffraction results show that high-purity MgB{sub 2} phase has been fabricated, which as well is reflected in critical temperature (T{sub c} = 37.8 K). Magnetic measurements reveal a high critical current density (J{sub c}) value such as 408 kA/cm{sup 2} when nano-amorphous boron is used. SEM studies show that nano-ordered MgB{sub 2} grains are formed, thereby creating large number of grain boundaries responsible for high critical current densities. Analysis of normalized pinning force curve as a function of reduced magnetic field indicates that dominant pinning is caused by grain boundaries.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Influence of field dependent critical current density on flux profiles in high Tc superconductors

The field distribution for superconducting cylinders and slabs with field dependent critical current densities in combined DC and AC magnetic fields and the corresponding magnetic fluxes are calculated. It is shown that all features of experimental magnetic-field profile measurements can be explained in the framework of field dependent critical current density. Even the quantitative agreement between the experimental and theoretical results using Kim's model is very good.

Takacs, S.↗

Increasing the Hot‐Electron Driven Hydrogen Evolution Reaction Rate on a Metal‐Free Graphene Electrode

Abstract Recently, it has been shown that a semiconductor–insulator–graphene device can drive the hydrogen evolution reaction (HER) at the graphene surface with a reduced onset potential by injecting hot electrons into graphene. However, the catalytic properties of graphene are limited by the large hydrogen adsorption energy and lack of electrochemically active sites. To address these limitations, a n ‐silicon/insulator/plasma etched graphene device is investigated, where a dry etch process is used to increase the number of active sites on the graphene by creating a greater number of active edge sites, increasing hydrogen adsorption at a given potential. This has been shown to improve the properties of devices with cold electrons. However, here it is shown that this approach can improve the HER rate with hot electrons. The electrons injected into the graphene from the silicon shift the onset potential of HER by as high as ≈0.8 V reaching a current density of 90 mA cm −2 at an overpotential of ‐0.5 V versus RHE. Furthermore, the comparison between device with pristine graphene shows a ≈2X improvement in current density at high overpotentials. This result shows that hot‐electron devices can be improved by modifying the catalytically active sites without metal catalysts.

Chae, Hyun Uk↗

Aligning thermal and current quenches with a high density low-Z injection

The conventional approach for thermal quench (TQ) mitigation in a tokamak disruption is through a high- Z impurity injection that radiates away the plasma’s thermal energy before it reaches the wall. The downside is a robust Ohmic-to-runaway current conversion due to the radiatively clamped low post-thermal-quench electron temperature. An alternative approach is to deploy a low- Z (either deuterium or hydrogen) injection that aims to slow down the TQ, and ideally aligns it with the current quench (CQ). This approach has been investigated here via 3D MHD simulations using the PIXIE3D code. By boosting the hydrogen density, a fusion-grade plasma is dilutionally cooled at approximately the original pressure. Energy loss to the wall is controlled by a Bohm outflow condition at the boundary where the magnetic field intercepts a thin plasma sheath at the wall, in addition to Bremsstrahlung bulk losses. Robust MHD instabilities proceed as usual, while the collisionality of the plasma has been greatly increased and parallel transport is now in the Braginskii regime. The main conclusion of this study is that the decreased transport loss along open field lines due to a sufficient low- Z injection slows down the TQ rate to the order of 20 ms, aligned with the CQ timescale for a 15 MA ITER plasma.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Thickness-Dependent Current Density and Flux Distribution in Thin Current-Carrying Superconducting Films Exposed to a Magnetic Field

With the rapid development of high-temperature superconductors, it is of great significance to get the precise current density and flux distribution within thin high-temperature superconducting films subjected to a transport current and an applied magnetic field. The transport current distribution and flux density in thin high-temperature superconducting films are calculated by a numerical method based on the Kim model and exponential model in this paper. The influences of transport current, applied magnetic field, width, and thickness of a superconducting film on the current distribution are discussed. The results reveal that the thickness has a significant effect on the critical current density of superconducting films.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗