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At least 541 records · Page 30

Remote Sensing of Forest Fires from Space

Forest fires, and fires used for deforestation and agriculture are sporadic. Some may last an hour others several days. It is difficult to find the fires or to estimate their effect on atmospheric pollution without an "eye in the sky" a satellite or an array of satellites that monitors them routinely from space. Since fires have a significant effect on the quality of air that we breath, on the surface vegetation, on clouds and precipitation and even on climate, NASA and other space agencies try to develop fire monitoring capability from space. Presently satellites were not designed to monitor fires. But the AVHRR and GOES satellites were used for fire monitoring. AVHRR is an orbiter that passes over the same area twice a day with detailed observations of fires from a distance of 800 km, GOES is a stationary satellite located above the equator, and observes the larger fires from a distance of 20,000 km. Field experiments, such as the "SCAR-B" experiment in Brazil conducted in 1995 by INPE, NASA and Universities of Sao Paulo, Washington and Wisconsin, were used to determine the ability of satellites to observe fires and the emitted pollution. They are the basis of a new system of satellites designed by NASA to observe fires and pollution, the Earth Observing System AM1 and PM1. NASA plans to use the information for four observations a day of the fires and the emitted smoke. The information can be used to determine the location of the fires, to distinguish between small and large fires and monitor their development. The satellites will measure the emitted smoke and with trajectory models can be used to predict the density and spread of the smoke.

Kaufman, Y.↗

The Rondonia Lightning Detection Network: Network Description, Science Objectives, Data Processing/Archival Methodology, and First Results

A four station Advanced Lightning Direction Finder (ALDF) network was recently established in the state of Rondonia in western Brazil through a collaboration of U.S. and Brazilian participants from NASA, INPE, INMET, and various universities. The network utilizes ALDF IMPACT (Improved Accuracy from Combined Technology) sensors to provide cloud-to-ground lightning observations (i.e., stroke/flash locations, signal amplitude, and polarity) using both time-of-arrival and magnetic direction finding techniques. The observations are collected, processed and archived at a central site in Brasilia and at the NASA/Marshall Space Flight Center (MSFC) in Huntsville, Alabama. Initial, non-quality assured quick-look results are made available in near real-time over the internet. The network will remain deployed for several years to provide ground truth data for the Lightning Imaging Sensor (LIS) on the Tropical Rainfall Measurement Mission (TRMM) satellite which was launched in November 1997. The measurements will also be used to investigate the relationship between the electrical, microphysical and kinematic properties of tropical convection. In addition, the long-term observations from this network will contribute in establishing a regional lightning climatological data base, supplementing other data bases in Brazil that already exist or may soon be implemented. Analytic inversion algorithms developed at NASA/MSFC are now being applied to the Rondonian ALDF lightning observations to obtain site error corrections and improved location retrievals. The processing methodology and the initial results from an analysis of the first 6 months of network operations will be presented.

Blakelee, Richard↗

The Rondonia Lightning Detection Network: Network Description, Science Objectives, Data Processing/Archival Methodology, and First Results

A four station Advanced Lightning Direction Finder (ALDF) network was recently established in the state of Rondonia in western Brazil through a collaboration of U.S. and Brazilian participants from NASA, INPE, INMET, and various universities. The network utilizes ALDF IMPACT (Improved Accuracy from Combined Technology) sensors to provide cloud-to-ground lightning observations (i.e., stroke/flash locations, signal amplitude, and polarity) using both time-of-arrival and magnetic direction finding techniques. The observations are collected, processed and archived at a central site in Brasilia and at the NASA/ Marshall Space Flight Center (MSFC) in Huntsville, Alabama. Initial, non-quality assured quick-look results are made available in near real-time over the internet. The network will remain deployed for several years to provide ground truth data for the Lightning Imaging Sensor (LIS) on the Tropical Rainfall Measuring Mission (TRMM) satellite which was launched in November 1997. The measurements will also be used to investigate the relationship between the electrical, microphysical and kinematic properties of tropical convection. In addition, the long-term observations from this network will contribute in establishing a regional lightning climatological data base, supplementing other data bases in Brazil that already exist or may soon be implemented. Analytic inversion algorithms developed at NASA/Marshall Space Flight Center (MSFC) are now being applied to the Rondonian ALDF lightning observations to obtain site error corrections and improved location retrievals. The processing methodology and the initial results from an analysis of the first 6 months of network operations will be presented.

Blakeslee, Rich↗

Theoretical Study of Response of InGaAs Metal-Semiconductor-Metal Photodetectors

We present a theoretical investigation of the response of metal-semiconductor-metal (MSM) photodetectors made of InGaAs lattice-matched to InP using a two-dimensional drift-diffusion model with a thermionic-field emission boundary condition for the heterojunctions. The effect of including a top InAlAs layer to increase the effective barrier height of the metal fingers on the InGaAs active layer is thoroughly examined and found to limit the collection of the photocurrent signal due to the electron and hole barriers that it forms with InGaAs. Due to the thickness and height of the InAlAs barrier layer in existing designs, the tunneling current obtained from the model is found to be negligibly small to significantly affect the output signal current. In an attempt to obtain a better response, different design structures including one where a quasi-Schottky contact is utilized are studied and their speed of response, breakdown voltage, and dark current are compared to that of the usual InGaAs device.

Salem, Ali F.↗

InGaAs PV Device Development for TPV Power Systems

lndium Gallium Arsenide (InGaAs) photovoltaic devices have been fabricated with bandgaps ranging from 0.75 eV to 0.60 eV on Indium Phosphide (InP) substrates. Reported efficiencies have been as high as 11.2% (AMO) for the lattice matched 0.75 eV devices. The 0.75 eV cell demonstrated 14.8% efficiency under a 1500 K blackbody with a projected efficiency of 29.3%. The lattice mismatched devices (0.66 and 0.60 eV) demonstrated measured efficiencies of 8% and 6% respectively under similar conditions. Low long wavelength response and high dark currents are responsible for the poor performance of the mismatched devices. Temperature coefficients have been measured and are presented for all of the bandgaps tested.

Wilt, David M.↗

Space Photovoltaic Research and Technology 1995

The Fourteenth Space Photovoltaic Research and Technology conference was held at the NASA Lewis Research Center from October 24-26, 1995. The abstracts presented in this volume report substantial progress in a variety of areas in space photovoltaics. Technical and review papers were presented in many areas, including high efficiency GaAs and InP solar cells, GaAs/Ge cells as commercial items, high efficiency multiple bandgap cells, solar cell and array technology, heteroepitaxial cells, thermophotovoltaic energy conversion, and space radiation effects. Space flight data on a variety of cells were also presented.

Landis, Geoffrey↗

Low Intensity Low Temperature (LILT) Measurements and Coefficients on New Photovoltaic Structures

Past NASA missions to Mars, Jupiter and the outer planets were powered by radioisotope thermal generators (RTGs). Although these devices proved to be reliable, their high cost and highly toxic radioactive heat source has made them far less desirable for future planetary missions. This has resulted in a renewed search for alternate energy sources, some of them being photovoltaics (PV) and thermophotovoltaics (TPV). Both of these alternate energy sources convert light/thermal energy directly into electricity. In order to create a viable PV data base for planetary mission planners and cell designers, we have compiled low intensity low temperature (LILT) I-V data on single junction and multi-junction high efficiency solar cells. The cells tested here represent the latest photovoltaic technology. Using this LILT data to calculate Short Circuit Current (I(sub sc)), Open Circuit Voltage (V(sub os)), and Fill Factor (FF) as a function of temperature and intensity, an accurate prediction of cell performance under the AM0 spectrum can be determined. When combined with QUantum efficiency at Low Temperature (QULT) data, one can further enhance the data by adding spectral variations to the measurements. This paper presents an overview of LILT measurements and is only intended to be used as a guideline for material selection and performance predictions. As single junction and multi-junction cell technologies emerge, new test data must be collected. Cell materials included are Si, GaAs/Ge, GaInP/GaAs/GaAs, InP, InGaAs/InP, InP/InGaAs/InP, and GaInP. Temperatures range down to as low as -180 C and intensities range from 1 sun down to 0.02 suns. The coefficients presented in this paper represent experimental results and are intended to provide the user with approximate numbers.

Scheiman, David A.↗

Materials and Device Optimization for High Power SiGe HBT Amplifiers at X-Band Frequencies

The driving force behind SiGe development is the potential for high frequency and high power devices that provide comparable functionality as more expensive semiconductors such as InP and GaAs, but at a much lower cost. Additional advantages are the potential for incorporating SiGe devices onto monolithic Si chips and fabricating entire systems, such as receiver front-ends or RF power amplifiers, on a single chip. The work reported in this paper summarizes the materials and simulation aspects of a much larger project, which will eventually lead to SiGe HBT amplifiers with output powers greater than 1 W and over 35 dB gain at X-band frequencies. To achieve these goals, accurate analysis of the materials properties, especially in the base region, and highly refined amplifier design procedures must be established. In this paper we report the precision that may be obtained using optical ellipsometry to monitor the base and emitter thicknesses and Ge content of the base. We also report the extent of crystalline degradation in state-of-the-art SiGe films with high Ge contents. The objective of this work is to access the materials quality of HBT structures, and then use this data to model how various defects impact device performance, and which defects are most likely to limit high power and/or high frequency performance.

Mueller, C. H.↗

Semiconductor Laser Linewidth Measurements for Space Interferometry Applications

Narrow linewidth (<100KHz) semiconductor lasers are expected to be a key technology in NASA's stellar interferometry missions to search for planets around nearby stars. Long coherence length lasers are needed for precise (20 pm to 5 mn) measurements of the optical path difference. This work discusses results using the self-heterodyne delay technique to measure 1.3 micrometer InP based DFB lasers. We will also address practical issues concerning detection and elimination of back reflections, choice of fiber length and resolution, and measurement of laser 1/f and current supply noise.

Dougherty, D. J.↗

The Development of Si and SiGe Technologies for Microwave and Millimeter-Wave Integrated Circuits

Historically, microwave technology was developed by military and space agencies from around the world to satisfy their unique radar, communication, and science applications. Throughout this development phase, the sole goal was to improve the performance of the microwave circuits and components comprising the systems. For example, power amplifiers with output powers of several watts over broad bandwidths, low noise amplifiers with noise figures as low as 3 dB at 94 GHz, stable oscillators with low noise characteristics and high output power, and electronically steerable antennas were required. In addition, the reliability of the systems had to be increased because of the high monetary and human cost if a failure occurred. To achieve these goals, industry, academia and the government agencies supporting them chose to develop technologies with the greatest possibility of surpassing the state of the art performance. Thus, Si, which was already widely used for digital circuits but had material characteristics that were perceived to limit its high frequency performance, was bypassed for a progression of devices starting with GaAs Metal Semiconductor Field Effect Transistors (MESFETs) and ending with InP Pseudomorphic High Electron Mobility Transistors (PHEMTs). For each new material or device structure, the electron mobility increased, and therefore, the high frequency characteristics of the device were improved. In addition, ultra small geometry lithographic processes were developed to reduce the gate length to 0.1 pm which further increases the cutoff frequency. The resulting devices had excellent performance through the millimeter-wave spectrum.

Ponchak, George E.↗

Introduction to the Special Issue on Microwave Circuits on Silicon Substrates

This article discusses the development of microwave circuits on silicon substrate. Silicon, even though inexpensive, did not provide the performance required for microwave circuits. Instead the development of microwave circuits used GaAs and InP substrates. With the development of commercial usages for microwave circuits, the costs of microwave circuits became an issue. The importance of cost, and the development of Si-device capabilities and fabrication techniques, such as molecular beam epitaxy, and ultra-high chemical vapor deposition. provided the circumstances where the development of microwave circuits on silicon is now possible.

Luy, Johann-Friedrich↗

Tropospheric Total Ozone in the Region of the Equatorial south Atlantic Ocean

As a consequence of the SHADOZ effort it is possible to examine Tropospheric Total Ozone TTO, over Ascension Island (8S,14W) and compare results with similar ozone soundings for the period July 1990 through October 1992. Because of the nearly 20-year long cooperation between NASA and INPE it is possible to also compare the Ascension Island results with the long-term ozone data set available from Natal, Brazil (6S,35W). The Natal site meets requirements of the SHADOZ program. The tropopause is determined objectively using the World Meteorological Organization (WMO) criteria and the radiosonde's temperature and altitude parameters. Once tropopause heights are determined TTO can be calculated. Time-series profiles illustrate changes in TTO over the period of record.

Schmidlin, Francis J.↗

Theoretical Study of Indium Compounds of Interest for Organometallic Chemical Vapor Deposition

The structural. electronic and therinochemical properties of indium compounds which are of interest in halide transport and organometallic chemical vapor deposition processes have been studied by ab initio and statistical mechanics methods. The compounds reported include: indium halides and hydrides (InF, InCl, InCl3, InH, InH2, InH3); indium clusters (In2, In3); methylindium, dimethylindium, and their hydrogen derivatives [In(CH3), In(CH3)H, In(CH3)H2, In(CH3)2, In(CH3)2H]; dimethyl-indium dimer [In2(CH3)4], trimethyl-indium [In(CH3)3]; dehydrogenated methyl, dimethyl and trimethylindium [In(CH3)2CH2, In(CH3)CH2, In(CH2)], trimethylindium adducts with ammonia, trimethylamine and hydrazine [(CH3)3In:NH3, (CH3)3In:N(CH3)3, (CH3)3In:N(H2)N(H2)]; dimethylamino-indium and methylimino-indium [In(CH3)2(NH2), In(CH3)(NH)]; indium nitride and indium nitride dimer (InN, In2N2), indium phosphide, arsenide and antimonide ([InP, InAs, InSb). The predicted electronic properties are based on density functional theory calculations; the calculated thermodynamic properties are reported following the format of the JANAF (Joint Army, Navy, NASA, Air Force) Tables. Equilibrium compositions at two temperatures (298 and 1000 K) have been analyzed for groups of competing simultaneous reactions.

Cardelino, B. H.↗

Biomass Burning Emissions in the Cerrado of Brazil Computed with Remote Sensing Data and GIS

Biomass burnin is a common force in much of the developing tropical world where it has wide-ranging environmental impacts. Fire is a component of tropical deforestation and is 0 p often used to clear broad expanses of land for shifting agriculture and cattle ranching. Frequent burning in the tropical savannas is a distinct problem from that of primary forest. In Brazil, most of the burning occurs in the cerrado which occupies approximately 1,800,000 km2, primarily on the great plateau in central Brazil. Wildland and agricultural fires are dramatic sources of regional air pollution in central Brazil. Biomass burning is an important source of a large number of trace gases including greenhouse gases and other chemically active species. Knowledge of trace gas emissions from biomass burning in Brazil is limited by a number of factors, most notably relative emission factors for gases from specific fire types/fuels and accurate estimates of temporal and spatial distribution and extent of fire activity. Estimates of trace gas emissions during September 1992 will be presented that incorporates a digital map of vegetation classes, pyrogenic emission factors calculated from ground and aircraft missions, and Instituto Nacional de Pesquisas Espaciais (INPE) fire products derived from Advanced Very High Resolution Radiometer (AVHRR) data. The regional emissions calculated from National Oceanographic and Atmospheric Administration (NOAA) AVHRR estimates of fire activity will provide an independent estimate for comparison with results obtained by the National Aeronautics and Space Administration (NASA) Transport and Atmospheric Chemistry Near the Equator - Atlantic (TRACE-A) experiments.

Guild, Liane S.↗

Real-Time Optical Monitoring and Simulations of Gas Phase Kinetics in InN Vapor Phase Epitaxy at High Pressure

Understanding the kinetics of nucleation and coalescence of heteroepitaxial thin films is a crucial step in controlling a chemical vapor deposition process, since it defines the perfection of the heteroepitaxial film both in terms of extended defect formation and chemical integrity of the interface. The initial nucleation process also defines the film quality during the later stages of film growth. The growth of emerging new materials heterostructures such as InN or In-rich Ga(x)In(1-x)N require deposition methods operating at higher vapor densities due to the high thermal decomposition pressure in these materials. High nitrogen pressure has been demonstrated to suppress thermal decomposition of InN, but has not been applied yet in chemical vapor deposition or etching experiments. Because of the difficulty with maintaining stochiometry at elevated temperature, current knowledge regarding thermodynamic data for InN, e.g., its melting point, temperature-dependent heat capacity, heat and entropy of formation are known with far less accuracy than for InP, InAs and InSb. Also, no information exists regarding the partial pressures of nitrogen and phosphorus along the liquidus surfaces of mixed-anion alloys of InN, of which the InN(x)P(1-x) system is the most interesting option. A miscibility gap is expected for InN(x)P(1-x) pseudobinary solidus compositions, but its extent is not established at this point by experimental studies under near equilibrium conditions. The extension of chemical vapor deposition to elevated pressure is also necessary for retaining stoichiometric single phase surface composition for materials that are characterized by large thermal decomposition pressures at optimum processing temperatures.

Dietz, Nikolaus↗

The Rondonia Lightning Detection Network: Network Description, Science Objectives, Data Processing Archival/Methodology, and Results

A four station Advanced Lightning Direction Finder (ALDF) network was established in the state of Rondonia in western Brazil in 1999 through a collaboration of U.S. and Brazilian participants from NASA, INPE, INMET, and various universities. The network utilizes ALDF IMPACT (Improved Accuracy from Combined Technology) sensors to provide cloud-to-ground lightning observations (i.e., stroke/flash locations, signal amplitude, and polarity) using both time-of- arrival and magnetic direction finding techniques. The observations are collected, processed and archived at a central site in Brasilia and at the NASA/Marshall Space Flight Center in Huntsville, Alabama. Initial, non-quality assured quick-look results are made available in near real-time over the Internet. The network, which is still operational, was deployed to provide ground truth data for the Lightning Imaging Sensor (LIS) on the Tropical Rainfall Measuring Mission (TRMM) satellite that was launched in November 1997. The measurements are also being used to investigate the relationship between the electrical, microphysical and kinematic properties of tropical convection. In addition, the long-time series observations produced by this network will help establish a regional lightning climatological database, supplementing other databases in Brazil that already exist or may soon be implemented. Analytic inversion algorithms developed at the NASA/Marshall Space Flight Center have been applied to the Rondonian ALDF lightning observations to obtain site error corrections and improved location retrievals. The data will also be corrected for the network detection efficiency. The processing methodology and the results from the analysis of four years of network operations will be presented.

Blakeslee, R. J.↗

InGaAs/InP Monolithic Interconnected Modules (MIM) for Thermophotovoltaic Applications

There has been a traditional trade-off in thermophotovoltaic (TPV) energy conversion development between systems efficiency and power density. This trade-off originates from the use of front surface spectral controls such as selective emitters and various types of filters. A monolithic interconnected module (MIM) structure has been developed which allows for both high power densities and high system efficiencies. The MIM device consists of many individual indium gallium arsenide (InGaAs) devices series -connected on a single semi-insulating indium phosphide (InP) substrate. The MIMs are exposed to the entire emitter output, thereby maximizing output power density. An infrared (IR) reflector placed on the rear surface of the substrate returns the unused portion of the emitter output spectrum back to the emitter for recycling, thereby providing for high system efficiencies. Initial MIM development has focused on a 1 sq cm device consisting of eight series interconnected cells. MIM devices, produced from 0,74 eV InGAAs, have demonstrated V(sub infinity) = 3.23 volts, J(sub sc) = 70 mA/sq cm and a fill factor of 66% under flashlamp testing. Infrared (IR) reflectance measurement (less than 2 microns) of these devices indicate a reflectivity of less than 82%. MIM devices produced from 0.55 eV InGaAs have also been den=monstrated. In addition, conventional p/n InGaAs devices with record efficiencies (11.7% AM1) have been demonstrated.

Wilt, David M.↗