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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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524 records · Page 30

Observation of a Giant Goos-Hänchen Shift for Matter Waves

The Goos-Hänchen (GH) shift describes a phenomenon in which a specularly reflected beam is translated along the reflecting surface such that the incident and reflected rays no longer intersect at the surface. Using a neutron spin-echo technique and a specially designed magnetic multilayer mirror, we have measured the relative phase between the reflected up and down neutron spin states in total reflection. The relative GH shift calculated from this phase shows a strong resonant enhancement at a particular incident neutron wave vector, which is due to a waveguiding effect in one of the magnetic layers. Calculations based on the observed phase difference between the neutron states indicate a propagation distance along the waveguide layer of 0.65 mm for the spin-down state, which we identify with the magnitude of the giant GH shift. The existence of a physical GH shift is confirmed by the observation of neutron absorption in the waveguide layer. Here, we propose ways in which our experimental method may be exploited for neutron quantum-enhanced sensing of thin magnetic layers.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

Quantum Emitters Induced by High Pressure and UV Laser Irradiation in Multilayer GaSe

In this work, we report on defect generation in multilayer GaSe through hydrostatic pressure quenching and UV laser irradiation. The Raman line width from the UV 266 nm irradiated sample is much wider than that in pressure-quenched GaSe, corresponding to a wider defect energy distribution range in the former sample than the latter. After quenching from 11.2 GPa, three photoluminescence (PL) peaks from defect states are observed at 657, 681, and 695 nm at a low temperature of 93 K. Defect-related peaks at 649, 694, 750, and 774 nm also appear in low-temperature PL spectra after UV laser irradiation, with a nonmonotonous intensity dependence on irradiation duration. There are common features in defects produced by these two methods: the PL peaks with the lowest energy are sharp, and their PL intensities increase linearly with the excitation laser power and saturate above a certain excitation laser power. These two features are similar to those in defects for single-photon emission (SPE) in other 2D materials at even lower temperatures. Fluorescence lifetime imaging shows distinguished short (2.3 ns) and long (75.6 nm) lifetimes of the 695 nm PL line in pressure-quenched GaSe. The density functional theory predicts defect energy levels related to Se vacancy.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗