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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 541 records · Page 30
All sourcesNASA NTRSDOE OSTI
DOE OSTI2016

Effect of substrate nitridation temperature on the persistent photoconductivity of unintentionally-doped GaN layer grown by PAMBE

The surface roughness and defect density of GaN epitaxial layers grown on c-plane sapphire substrate are investigated and found to be dependent on nitridation temperature. GaN epitaxial layers grown after nitridation of sapphire at 200°C have a higher defect density and higher surface roughness compared to the GaN layers grown at 646°C nitridation as confirmed by atomic force microscopy (AFM). The persistent photoconductivity (PPC) was observed in both samples and it was found to be decreasing with decreasing temperature in the range 150-300°C due to long carrier lifetime and high electron mobility at low temperature. The photoresponse of the GaN films grown in this study exhibit improved PPC due to their better surface morphology at 646°C nitrided sample. The point defects or extended microstructure defects limits the photocarrier lifetime and electron mobility at 200°C nitrided sample.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Heavy ion irradiation effects on GaN/AlGaN high electron mobility transistor failure at off-state

We investigate the effects of ion irradiation on AlGaN/GaN high electron mobility electron transistors using in-situ transmission electron microscopy. The experiments are performed inside the microscope to visualize the defects, microstructure and interfaces of ion irradiated transistors during operation and failure. Here, experimental results indicate that heavy ions such as Au 4+ can create a significant number of defects such as vacancies, interstitials and dislocations in the device layer. It is hypothesized that these defects act as charge traps in the device layer and the resulting charge accumulation lowers the breakdown voltage. Sequential energy dispersive X-ray spectroscopy mapping allows us to track individual chemical elements during the experiment, and the results suggest that the electrical degradation in the device layer may originate from oxygen and nitrogen vacancies.

36 MATERIALS SCIENCE↗
DOE OSTI2016

Atomic Structure of Ultrathin Gold Nanowires

Understanding of the atomic structure and stability of nanowires (NWs) is critical for their applications in nanotechnology, especially when the diameter of NWs reduces to ultrathin scale (1-2 nm). Here, using aberration-corrected high-resolution transmission electron microscopy (AC-HRTEM), we report a detailed atomic structure study of the ultrathin Au NWs, which are synthesized using a silane-mediated approach. The NWs contain large amounts of generalized stacking fault defects. These defects evolve upon sustained electron exposure, and simultaneously the NWs undergo necking and breaking. Quantitative strain analysis reveals the key role of strain in the breakdown process. Besides, ligand-like morphology is observed at the surface of the NWs, indicating the possibility of using AC-HRTEM for surface ligand imaging. Moreover, the coalescence dynamic of ultrathin Au NWs is demonstrated by in situ observations. This study provides a comprehensive understanding of the structure of ultrathin metal NWs at atomic-scale and could have important implications for their applications.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2014

Ge{sub 1-y}Sn{sub y} (y = 0.01-0.10) alloys on Ge-buffered Si: Synthesis, microstructure, and optical properties

Novel hydride chemistries are employed to deposit light-emitting Ge{sub 1-y}Sn{sub y} alloys with y ≤ 0.1 by Ultra-High Vacuum Chemical Vapor Deposition (UHV-CVD) on Ge-buffered Si wafers. The properties of the resultant materials are systematically compared with similar alloys grown directly on Si wafers. The fundamental difference between the two systems is a fivefold (and higher) decrease in lattice mismatch between film and virtual substrate, allowing direct integration of bulk-like crystals with planar surfaces and relatively low dislocation densities. For y ≤ 0.06, the CVD precursors used were digermane Ge₂H₆ and deuterated stannane SnD₄. For y ≥ 0.06, the Ge precursor was changed to trigermane Ge₃H₈, whose higher reactivity enabled the fabrication of supersaturated samples with the target film parameters. In all cases, the Ge wafers were produced using tetragermane Ge₄H₁₀ as the Ge source. The photoluminescence intensity from Ge{sub 1–y}Sn{sub y}/Ge films is expected to increase relative to Ge{sub 1–y}Sn{sub y}/Si due to the less defected interface with the virtual substrate. However, while Ge{sub 1–y}Sn{sub y}/Si films are largely relaxed, a significant amount of compressive strain may be present in the Ge{sub 1–y}Sn{sub y}/Ge case. This compressive strain can reduce the emission intensity by increasing the separation between the direct and indirect edges. In this context, it is shown here that the proposed CVD approach to Ge{sub 1–y}Sn{sub y}/Ge makes it possible to approach film thicknesses of about 1 μm, for which the strain is mostly relaxed and the photoluminescence intensity increases by one order of magnitude relative to Ge{sub 1–y}Sn{sub y}/Si films. The observed strain relaxation is shown to be consistent with predictions from strain-relaxation models first developed for the Si{sub 1–x}Ge{sub x}/Si system. The defect structure and atomic distributions in the films are studied in detail using advanced electron-microscopy techniques, including aberration corrected STEM imaging and EELS mapping of the average diamond–cubic lattice.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Topological and electrical properties of capped and annealed (0001) hydride vapor phase epitaxy GaN films on sapphire

In light of the necessity to anneal GaN to activate implanted dopants, the effects of the annealing temperature and time, the quality of the hydride vapor phase epitaxy grown GaN film, the quality of the annealing cap, and the effects of the stresses generated by the difference in the coefficients of thermal expansion of the film and the substrate are examined topographically using atomic force microscopy, and electrical measurements are made on Schottky diodes fabricated on the annealed samples. Here the results show that thermal decomposition begins at threading edge dislocations that form polygonized small angle grain boundaries during the annealing process; donor defects, probably nitrogen vacancies, are formed near the surface; and the donors are created more quickly when the annealing temperature is higher, the annealing time is longer, and the thermal stresses on the annealing cap are greater. The results suggest that the maximum annealing temperature is ~1300 °C, and at that annealing temperature, the annealing time should not exceed 4 min.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Critical differences in 3D atomic structure of individual ligand-protected nanocrystals in solution

Precise three-dimensional (3D) atomic structure determination of individual nanocrystals is a prerequisite for understanding and predicting their physical properties. Nanocrystals from the same synthesis batch display what are often presumed to be small but possibly important differences in size, lattice distortions, and defects, which can only be understood by structural characterization with high spatial 3D resolution. We solved the structures of individual colloidal platinum nanocrystals by developing atomic-resolution 3D liquid-cell electron microscopy to reveal critical intrinsic heterogeneity of ligand-protected platinum nanocrystals in solution, including structural degeneracies, lattice parameter deviations, internal defects, and strain. These differences in structure lead to substantial contributions to free energies, consequential enough that they must be considered in any discussion of fundamental nanocrystal properties or applications.

Kim, Byung Hyo↗
DOE OSTI2015

Feasibility of Observing and Characterizing Single Ion Strikes in Microelectronic Components.

The transient degradation of semiconductor device performance under irradiation has long been an issue of concern. A single high-energy charged particle can degrade or permanently destroy the microelectronic component, potentially altering the course or function of the systems. Disruption of the the crystalline structure through the introduction of quasi-stable defect structures can change properties from semiconductor to conductor. Typically, the initial defect formation phase is followed by a recovery phase in which defect-defect or defect-dopant interactions modify the characteristics of the damaged structure. In this LDRD Express, in-situ ion irradiation transmission microscopy (TEM) in-situ TEM experiments combined with atomistic simulations have been conducted to determine the feasibility of imaging and characterizing the defect structure resulting from a single cascade in silicon. In-situ TEM experiments have been conducted to demonstrate that a single ion strike can be observed in Si thin films with nanometer resolution in real time using the in-situ ion irradiation transmission electron microscope (I 3 TEM). Parallel to this experimental effort, ion implantation has been numerically simulated using Molecular Dynamics (MD). This numerical framework provides detailed predictions of the damage and follow the evolution of the damage during the first nanoseconds. The experimental results demonstrate that single ion strike can be observed in prototypical semiconductors.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Oxidation of GaSb(100) and its control studied by scanning tunneling microscopy and spectroscopy

Atomic-scale knowledge and control of oxidation of GaSb(100), which is a potential interface for energy-efficient transistors, are still incomplete, largely due to an amorphous structure of GaSb(100) oxides. We elucidate these issues with scanning-tunneling microscopy and spectroscopy. The unveiled oxidation-induced building blocks cause defect states above Fermi level around the conduction-band edge. By interconnecting the results to previous photoemission findings, we suggest that the oxidation starts with substituting second-layer Sb sites by oxygen. Adding small amount of indium on GaSb(100), resulting in a (4 × 2)-In reconstruction, before oxidation produces a previously unreported, crystalline oxidized layer of (1 × 3)-O free of gap states.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2024

Deep learning-enabled probing of irradiation-induced defects in time-series micrographs

Modeling time-series data with convolutional neural networks (CNNs) requires building a model to learn in batches as opposed to training sequentially. Coupling CNNs with in situ or operando techniques opens the possibility of accurately segmenting dynamic reactions and mass transport phenomena to understand how materials behave under the conditions in which they are used. In this article, in situ ion irradiation transmission electron microscopy (TEM) images are used as inputs into the CNN to assess the defect generation rate, defect cluster density, and saturation of defects. We then use the output segmentation maps to correlate with conventional TEM micrographs to assess the model’s ability to detail nanoscale interactions. Next, we discuss the implications of preprocessing and hyperparameters on model variability, accuracy when expanded to other datasets, and the role of regularization when controlling model variance. Ultimately, we eliminate human bias when extrapolating physical metrics, speed up analysis time, decouple reactions that happen at 100 ms intervals, and deploy models that are both accurate and transferable to similar experiments.

Burns, Kory (ORCID:0000000158019909)↗
DOE OSTI2019

Reversible defect engineering in graphene grain boundaries

Research efforts in large area graphene synthesis have been focused on increasing grain size. Here, it is shown that, beyond 1 μm grain size, grain boundary engineering determines the electronic properties of the monolayer. It is established by chemical vapor deposition experiments and first-principle calculations that there is a thermodynamic correlation between the vapor phase chemistry and carbon potential at grain boundaries and triple junctions. As a result, boundary formation can be controlled, and well-formed boundaries can be intentionally made defective, reversibly. In 100 µm long channels this aspect is demonstrated by reversibly changing room temperature electronic mobilities from 1000 to 20,000 cm2 V-1 s-1 . Water permeation experiments show that changes are localized to grain boundaries. Electron microscopy is further used to correlate the global vapor phase conditions and the boundary defect types. Such thermodynamic control is essential to enable consistent growth and control of two-dimensional layer properties over large areas.

36 MATERIALS SCIENCE↗
DOE OSTI2015

An InP/Si heterojunction photodiode fabricated by self-aligned corrugated epitaxial lateral overgrowth

An n-InP/p-Si heterojunction photodiode fabricated by corrugated epitaxial lateral overgrowth (CELOG) method is presented. N-InP/p-Si heterojunction has been achieved from a suitable pattern containing circular shaped openings in a triangular lattice on the InP seed layer on p-Si substrate and subsequent CELOG of completely coalesced n-InP. To avoid current path through the seed layer in the final photodiode, semi-insulating InP:Fe was grown with adequate thickness prior to n-InP growth in a low pressure hydride vapor phase epitaxy reactor. The n-InP/p-Si heterointerface was analyzed by scanning electron microscopy and Raman spectroscopy. Room temperature cross-sectional photoluminescence (PL) mapping illustrates the defect reduction effect in InP grown on Si by CELOG method. The InP PL intensity measured above the InP/Si heterojunction is comparable to that of InP grown on a native planar substrate indicating low interface defect density of CELOG InP despite of 8% lattice mismatch with Si. The processed n-InP/p-Si heterojunction photodiodes show diode characteristics from the current-voltage (I-V) measurements with a dark current density of 0.324 mA/cm{sup 2} at a reverse voltage of −1 V. Under the illumination of AM1.5 conditions, the InP/Si heterojunction photodiode exhibited photovoltaic effect with an open circuit voltage of 180 mV, a short circuit current density of 1.89 mA/cm{sup 2}, an external quantum efficiency of 4.3%, and an internal quantum efficiency of 6.4%. This demonstration of epitaxially grown InP/Si heterojunction photodiode will open the door for low cost and high efficiency solar cells and photonic integration of III-Vs on silicon.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Dislocation loop evolution in Kr-irradiated ThO 2

Here, the early stage of microstructural evolution of ThO 2 , under krypton irradiation at 600, 800, and 1000°C, was investigated using in situ transmission electron microscopy (TEM). Dislocation loops grew faster, whereas their number density decreased with increasing irradiation temperature. Loop density was found to decrease with ion dose. Interstitial dislocation loops, including Frank loops with Burgers vector of $\textit{a}/3\langle111\rangle$ and perfect loops with Burgers vector of $\textit{a}/2\langle110\rangle$, were determined by traditional TEM and atomic resolution–scanning TEM techniques. Atomistic and mesoscale level modeling are performed to interpret experimental observations. The migration energy barriers of defects in ThO 2 were calculated using density-functional theory. The energetics of different dislocation loop types were studied using molecular dynamics simulations. Loop density and diameter were analyzed using a kinetic rate theory model that considers stoichiometric loop evolution. This analysis reveals that loop growth is governed by the mobility of cation interstitials, whereas loop nucleation is determined by the mobility of anion defects. Lastly, a rate theory model was used to extract the diffusion coefficients of thorium interstitials, oxygen interstitials, and vacancies.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
DOE OSTI2024

Unveiling Structural Heterogeneity and Imbalance of Gold Decahedral Nanoparticles using Four-dimensional Scanning Transmission Electron Microscopy

Multi-twinned structures have been observed in technologically important crystal systems, for example diamond cubic and face-centered cubic (FCC) lattices, that include materials such as diamond, silicon, a wide range of noble metals, and their nanoscale counterparts. Beyond atomic building blocks, the special arrangements also occur in the self-assembly of nanoparticles (NP) and μm-sized colloidal particles and occupy parts of their phase diagrams. Spanning a wide range of length scales, the universality of the structures arises when the systems attempt to achieve multitwinned structures by overcoming geometric misfits during minimizing surface energies with entirely {111} or close-packing facets. While it is fundamental to understand how strain is sustained upon twinned structures and symmetry breaking, the knowledge will be paramount in practical aspects such as guiding and controlling the thin film growth, anisotropic NP growth, and self-assembly of NPs. Au decahedral (Dh) NP, as the most prevalent multi-twinned model system, fits five tetrahedral motifs into a circle by sharing an axis resulting in a geometric misfit angle of 7.35°, or a disclination with power of -7.35°. Postulating how Au FCC lattice adopts the misfit, theoretical models have been developed to address the underlying lattice symmetry and inhomogeneous strain distribution separately. Yet, experimental reports regarding the former have been limited due to the relatively large X-ray beam sizes that do not fit the sizes of NPs. On the other hand, though the latter has been widely adapted in the thermodynamics of small (<10 nm) multi-twinned nanoparticles, previous literature has shown that, at edge length of 17 nm, the theory’s is invalidated by shear strain that is observed in a defect-free Au Dh NP by high-resolution transmission electron microscopy (HR-TEM) imaging. Though the advancement of aberrationcorrected scanning transmission electron microscopy (AC-STEM) imaging and ab initio calculation techniques brings new opportunities, along with challenges in complicated image analysis and limitation in particle size (usually below 10 nm), the gap between nanoscale and mesoscale has never been extended to gain insight from atomic system with straightforward interaction potentials.

4D-STEM↗
DOE OSTI2016

Atomically Resolved Elucidation of the Electrochemical Covalent Molecular Grafting Mechanism of Single Layer Graphene

Engineering graphene at the atomic level via chemical doping, substrate interactions or lateral confinement opens up avenues for precise tuning of its electronic and magnetic properties. Chemical doping by covalent modification routes using electrochemical tools offers rich opportunities that are yet to be fully explored. The key to controlling graphene's physicochemical properties requires a detailed atomistic understanding of the geometry and mechanism of the covalent attachment process. By employing diaryliodonium salts instead of the commonly used diazonium salts, precise molecular grafting onto epitaxial graphene is achieved. Using atomically resolved imaging via scanning tunneling microscopy it is shown that for single layer, high quality, low defect graphene, the functionalization process is controlled by kinetics rather than thermodynamics in accord with Marcus–Gerisher theory. The predominance of the preferential pairwise attachment of molecular grafts specifically on the same graphene sublattice gives rise to ferromagnetic properties previously observed in nitrophenyl modified graphene. Furthermore, p-type doping has been quantified by electrical measurements and angle resolved photoelectron spectroscopy. Overall this electrochemical route for precise covalent functionalization of single layer graphene is general and can be straightforwardly extended to other 2D few-layer confined materials such as transition metal chalcogenides.

36 MATERIALS SCIENCE↗
NASA NTRS1991

New optical approaches to the quantitative characterization of crystal growth, segregation and defect formation

Elemental and compound semiconductors were characterized using new optical approach based on NIR microscopy in conjunction with computational image analysis and contrast enhancement. The approach made it possible to perform a quantitative microsegregation analysis of GaAs and InP. NIR dark file illumination in transmission mode makes it possible to detect submicron precipitates in semiinsulating GaAs.

Carlson, D. J.↗
DOE OSTI2019

Carrier-Transport Study of Gallium Arsenide Hillock Defects

Abstract Single-crystalline gallium arsenide (GaAs) grown by various techniques can exhibit hillock defects on the surface when sub-optimal growth conditions are employed. The defects act as nonradiative recombination centers and limit solar cell performance. In this paper, we applied near-field transport imaging to study hillock defects in a GaAs thin film. On the same defects, we also performed near-field cathodoluminescence, standard cathodoluminescence, electron-backscattered diffraction, transmission electron microscopy, and energy-dispersive X-ray spectrometry. We found that the luminescence intensity around the hillock area is two orders of magnitude lower than on the area without hillock defects in the millimeter region, and the excess carrier diffusion length is degraded by at least a factor of five with significant local variation. In conclusion, the optical and transport properties are affected over a significantly larger region than the observed topography and crystallographic and chemical compositions associated with the defect.

14 SOLAR ENERGY↗
DOE OSTI2021

Epitaxial Thin Films of a Chalcogenide Perovskite

Chalcogenide perovskites have emerged as a new class of optoelectronic materials, especially for photovoltaic applications, but fundamental properties and applications of chalcogenide perovskites remain limited due to the lack of high-quality thin films. In this paper, we report direct epitaxial thin film growth of BaZrS 3 , a prototypical chalcogenide, by pulsed laser deposition. X-ray diffraction studies show that the films are strongly textured out-of-plane and have a clear in-plane epitaxial relationship with the substrate. Electron microscopy studies confirm the presence of epitaxy for the first few layers of the film at the interface, even though away from the interface, the films are polycrystalline with many extended defects, suggesting the potential for further improvement in growth. X-ray reflectivity and atomic force microscopy show smooth film surfaces and interfaces between the substrate and the film. The films show strong light absorption near the band edge and photoluminescence in the visible region, validating BaZrS 3 as a suitable candidate for ultrathin front absorbers in tandem solar cells. The photodetector devices show fast and efficient photo response with the highest ON/OFF ratio reported for BaZrS 3 films thus far. Our study opens up opportunities to use high quality thin films of chalcogenide perovskites to probe fundamental physical phenomena in thin films and heterostructures and also in photovoltaic and optoelectronic applications.

36 MATERIALS SCIENCE↗