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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 541 records · Page 30
All sourcesNASA NTRSDOE OSTI
NASA NTRS1980

Computer modeling of high-efficiency solar cells

Transport equations which describe the flow of holes and electrons in the heavily doped regions of a solar cell are presented in a form that is suitable for device modeling. Two experimentally determinable parameters, the effective bandgap shrinkage and the effective asymmetry factor are required to completely model the cell in these regions. Nevertheless, a knowledge of only the effective bandgap shrinkage is sufficient to model the terminal characteristics of the cell. The results of computer simulations of the effects of heavy doping are presented. The insensitivity of the terminal characteristics to the choice of effective asymmetry factor is shown along with the sensitivity of the electric field and quasielectric fields to this parameter. The dependence of the terminal characteristics on the effective bandgap shrinkage is also presented.

Schartz, R. J.↗
DOE OSTI2021

Experimental evidence of plasmarons and effective fine structure constant in electron-doped graphene/h-BN heterostructure

Electron-electron interaction is fundamental in condensed matter physics and can lead to composite quasiparticles called plasmarons, which strongly renormalize the dispersion and carry information of electron-electron coupling strength as defined by the effective fine structure constant $α$ $^{*}_{ee}$. Although h-BN with unique dielectric properties has been widely used as an important substrate for graphene, so far there is no experimental report of plasmarons in graphene/h-BN yet. Here, we report direct experimental observation of plasmaron dispersion in graphene/h-BN heterostructures through angle-resolved photoemission spectroscopy (ARPES) measurements upon in situ electron doping. Characteristic diamond-shaped dispersion is observed near the Dirac cone in both 0° (aligned) and 13.5° (twisted) graphene/h-BN, and the electron-electron interaction strength $α$ $^{*}_{ee}$ is extracted to be $α$ $^{*}_{ee}$ ≈ 0.9 ± 0.1, highlighting the important role of electron-electron interaction. Our results suggest graphene/h-BN as an ideal platform for investigating strong electron-electron interaction with weak dielectric screening, and lays fundamental physics for gate-tunable nano-electronics and nano-plasmonics.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2017

Impact of stoichiometry of Yb 2 Ti 2 O 7 on its physical properties

A series of ${\mathrm{Yb}}_{2+x}{\mathrm{Ti}}_{2{-}x}{\mathrm{O}}_{7{-}{\delta}}$ doped samples demonstrates the effects of off-stoichiometry on ${\mathrm{Yb}}_{2}{\mathrm{Ti}}_{2}{\mathrm{O}}_{7}$'s structure, properties, and magnetic ground state via x-ray diffraction, specific heat, and magnetization measurements. A stoichiometric single crystal of ${\mathrm{Yb}}_{2}{\mathrm{Ti}}_{2}{\mathrm{O}}_{7}$ grown by the traveling solvent floating zone technique (solvent = 30 wt % rutile ${\mathrm{TiO}}_{2}$ and 70 wt % ${\mathrm{Yb}}_{2}{\mathrm{Ti}}_{2}{\mathrm{O}}_{7}$) is characterized and evaluated in light of this series. Our data shows that upon positive $x$ doping, the cubic lattice parameter $a$ increases and the Curie-Weiss temperature ${{\theta}}_{\mathrm{CW}}$ decreases. Heat capacity measurements of stoichiometric ${\mathrm{Yb}}_{2}{\mathrm{Ti}}_{2}{\mathrm{O}}_{7}$ samples exhibit a sharp, first-order peak at $T=268$(4) mK that is suppressed in magnitude and temperature in samples doped off ideal stoichiometry. The full entropy recovered per Yb ion is 5.7 J ${\mathrm{K}}^{{-}1}{\approx}Rln2$. Our work establishes the effects of doping on ${\mathrm{Yb}}_{2}{\mathrm{Ti}}_{2}{\mathrm{O}}_{7}$'s physical properties, which provides further evidence indicating that previous crystals grown by the traditional floating zone method are doped off ideal stoichiometry. Additionally, we present how to grow high-quality colorless single crystals of ${\mathrm{Yb}}_{2}{\mathrm{Ti}}_{2}{\mathrm{O}}_{7}$ by the traveling solvent floating zone growth method.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Magnetic and magnetocaloric properties of DyCo 2 C x alloys

The magnetic and magnetocaloric properties of DyCo 2 C x (x = 0, 0.05, 0.1, and 0.15) alloys were investigated. The results show that the Curie temperature (T C ) of the DyCo 2 C x alloys increases with increasing C content, from 136 K (x = 0) to 152 K (x = 0.15), but the lattice parameter a of DyCo 2 C x exhibits a maximum at x = 0.05. The suppression of the ac susceptibility of DyCo 2 C x at low temperature indicates the enhancement of the domain wall pinning effect by carbon doping. The positive slops of the Arrott plots of the doped compounds indicate that the phase transition is second order for the carbon-doped alloys, and the maximum value of the isothermal magnetic entropy change (ΔS M ) for the magnetic field change of 50 kOe decreases from -13.9 J/kg· K (x = 0) to -7.8 J/kg·K (x = 0.15). Lastly, the relative cooling power (RCP) of DyCo 2 C x is nearly the same in all studied alloys, while the temperature-averaged entropy change over 10 K temperature span, TEC(10), indicates decreasing magnetocaloric performance of carbon doped materials.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Property Measurements of NaCl-UCl 3 and LiF-NaF-KF Molten Salts Doped with Surrogate Fission Products

Knowing thermophysical and thermochemical property values of salts over the expected range of operating temperatures is essential to modeling and simulation efforts that support the commercialization of molten salt reactor (MSR) technologies. Salt properties being measured at Argonne include thermal transitions, phase behavior, heat capacity, density, surface tension, volumetric thermal expansion, thermal diffusivity, thermal conductivity, and viscosity. The properties of several salts of interest including NaCl-UCl 3 and LiF-NaF-KF (FLiNaK) have been measured at Argonne and reported previously. These property measurements are suitable for use in evaluating reactor performance during startup and the early operating life of the reactor. The physical and chemical behavior of the fuel salt is altered by the buildup of fission products and the resulting changes in heat transfer and other properties must be understood by reactor developers. This report summarizes melting behavior, heat capacity, and thermal diffusivity values that were measured for mixtures of FLiNaK and NaCl-UCl 3 salts that have been doped with surrogate fission products. Additional heat capacity measurements were also performed on a separate mixture of FLiNaK without dopants. Measured properties are suitable for incorporation into the Molten Salt Thermal Properties Database–Thermochemical (MSTDB–TC) and the Molten Salt Thermal Properties Database–Thermophysical (MSTDB–TP) to support the development of MSRs. Salts were prepared by doping eutectic mixtures of NaCl-UCl 3 and FLiNaK with surrogate fission products. These salts were prepared for use in salt spill experiments being performed at Argonne and were subsequently used for thermal property measurements. Thermal transitions and heat capacities were measured by using differential scanning calorimetry (DSC) and thermal diffusivity was measured by using laser flash analysis (LFA) at temperatures spanning the typical MSR operating range. The measured property values of the doped salts were compared to measured property values of salts without fission products to quantify the effects of the doped fission products.

11 NUCLEAR FUEL CYCLE AND FUEL MATERIALS↗
NASA NTRS1988

Indentation plasticity and fracture in silicon

Measurements of the ductile-brittle transition temperature of heavily doped silicon were carried out using indentation techniques. Diamond pyramid hardness tests were performed on the (100) face of heavily doped N-type and P-type and intrinsic silicon single crystals. Tests were performed over the range 200 C to 850 C and loads of 100 to 500 g were used. Samples were subsequently etched to reveal dislocation rosettes produced by indentation. Intrinsic silicon underwent a ductile-brittle transition at 660 C, P-type at 645 C and N-type at 625 C. Hardness values varied from 1.1 GPa at 700 C to 11.7 GPa at 200 C. Significant effects of hardness on doping were present only at the highest temperatures. Lower loads generally produced higher hardness but load did not affect the Ductile-Brittle Transition Temperature (DBTT). Fracture toughness values ranged from 0.9 MPa m(1/2) at 200 C to 2.75 MPa m(1/2) near the DBTT. Doping did not affect the fracture toughness of silicon. P-type doping increased the size of dislocation rosettes observed after indentation, but N-type did not, in contradiction of the expected results. Results are discussed in terms of the effect of doping on the dislocation mobility in silicon.

Rybicki, George C.↗
DOE OSTI2018

Spectroscopic properties and rate equation model of Er doped BaLaGa3O7 crystals

Highlights: • We grew Er{sup 3+} activated BaLaGa{sub 3}O{sub 7} crystal for usage in mid-infrared laser. • The change of Er{sup 3+} doping concentration had significant effect on the fluorescence properties. • The best doping concentration of Er{sup 3+} should be maintained at 10–15at% to obtain 2.7 μm output. • We built and discussed the rate equation model according to the energy transfer diagram. - Abstract: Single crystals of pure and Er{sup 3+} doped BaLaGa{sub 3}O{sub 7} were grown successfully by the Czochralski technique. The absorption spectra, emission spectra including up-conversion, near-infrared and mid-infrared fluorescence spectra, as well as the fluorescence decay curves were measured at room temperature. The optical parameters of absorption and emission cross sections, the fluorescence lifetimes were evaluated and compared. Based on the Judde-Ofelt theory, Judde-Ofelt parameters such as the fluorescent branching ratios, the spontaneous transition probabilities and the radiative lifetimes were calculated. According to the energy transfer diagram, the rate equation model was built and discussed. In summary, Er{sup 3+}: BaLaGa{sub 3}O{sub 7} crystal is attractive and significant as laser gain material for realization of ∼2.7 μm laser output.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

Sensitivity Effects of Hollow Glass Micro-Balloon Doping on RDX-Based Explosives

Sensitivity to initiation is an important characteristic of high explosives. Many chemical and physical properties are fine-tuned to deliver an energetic material that behaves according to the user’s specifications exactly. In some cases, it is advantageous to study the effects that non energetic additives have on the performance of an explosive material. Following on the promising results obtained in other experiments, a study is conducted on the effects of hollow glass micro-balloons (bubbles, spheres), or HGMB, on a material’s sensitivity. Threshold test data is compared between several formulations of explosives. The control formulation is an RDX-based explosive with a non-energetic binder, and the test formulations are identical in composition, but with the addition of HGMB, up to 6% by volume. Safety testing of the new HGMB-doped explosive formulations is conducted to ensure they can be produced and handled safely prior to intentional detonation. This experiment utilizes an attenuation card of varying thicknesses between the initiator and the test article to attenuate the shock imparted, and a witness plate is analyzed for each test article to determine a GO or NO GO result. The data collected and the conclusions of this study affect how additives like HGMB are utilized in future explosive sensitivity threshold experiments.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

Correlation effects on coupled electronic and structural properties of doped rare-earth trihydrides

Rare-earth trihydride (𝑅⁢H 3 ) compounds exhibit intriguing coupled electronic and structural properties as a function of doping, hydrogen vacancies, and thermodynamic conditions. Theoretical studies of these materials typically rely on density functional theory (DFT), including the use of small supercells that may underestimate strong correlation effects and structural distortions which in turn may influence their metallicity. Here, we elucidate the roles of lattice distortions and correlation effects on the electronic properties of pristine and doped 𝑅⁢H 3 compounds by adopting DFT +U and quantum Monte Carlo (QMC) methods. Linear-response constrained DFT (LR-cDFT) methods find Hubbard U ≈ 2 eV for 𝑅 𝑑 orbitals and U ≈ 6 eV for H 𝑠 ⁡/N 𝑝 /O 𝑝 orbitals. The small U on Lu 𝑑 orbitals is consistent with QMC calculations on LuH 3 and LuH 2.875 ⁢N 0.125 . In pure face-centered-cubic (FCC) 𝑅⁢H 3 (𝑅 = Lu,Y) compounds, neither DFT nor DFT +U with the self-consistently determined U is enough to create a band gap, however a supercell with hydrogen distortions creates a small gap whose magnitude increases when performing DFT +U with self-consistently determined U values. Furthermore, correlation effects, in turn, have a moderate influence on the coupled structural and electronic properties of doped 𝑅⁢H 3 compounds and may be important when considering the competition between structural distortions and superconductivity.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Role of Ho Doping in Magnetization Mechanism of BiFeO{sub 3} Thin Films

BiFeO{sub 3} (BFO) as one of the considerable interesting multiferroic materials has been widely investigated for its fantastic science and potential application. Herein, effects of Ho doping on the structure, morphology, and magnetic properties of BFO thin films were systematically studied. X-ray diffraction (XRD) indicates a successful substitution of Ho at Bi site and a transition in crystal structure of Bi{sub 0.9}Ho{sub 0.1}FeO{sub 3} (BHFO) thin film. Raman scattering spectrum is further evidence of XRD analysis results. The Ho-doped BFO thin films possess uniform morphology. X-ray photoelectron spectroscopy (XPS) confirms that the substitution of Bi{sup 3+} ions with Ho{sup 3+} ions is beneficial. The remanent magnetization of BHFO thin films is about three times than that of the BFO thin films under a maximum magnetic field of 15,000 Oe. And we systematically discussed several possible reasons for the enhancement of magnetization.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2017

Optical and Electrical Properties of Sn-Doped Zinc Oxide Single Crystals

Here, Sn dopant in ZnO may significantly improve the n-type conductivity of ZnO through a characteristic double effect. However, studies on bulk Sn-doped ZnO are rare, and the effect of Sn doping on the optoelectronic properties of bulk ZnO is not well understood. In this work, the effect of Sn doping on the optical and electrical properties of ZnO bulk single crystals was investigated through optical absorption spectroscopy, Hall-effect measurements, and thermoluminescence (TL) spectroscopy. Undoped and Sn-doped ZnO single crystals were grown by chemical vapor transport method and characterized by x-ray diffraction analysis. The Sn doping level in the crystals was evaluated by inductively coupled plasma mass spectroscopy measurements. Hall-effect measurements revealed an increase in conductivity and carrier concentration with increasing Sn doping, while TL measurements identified a few donor species in the crystals with donor ionization energy ranging from 35 meV to 118 meV. Increasing Sn doping was also associated with a color change of single crystals from colorless to dark blue.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Nonadiabatic Effects on Defect Diffusion in Silicon-Doped Nanographenes

Single atom impurities in graphene, substitutional silicon defects in particular, have been observed to diffuse under electron beam irradiation. However, the relative importance of elastic and inelastic scattering in facilitating their mobility remains unclear. Here, we employ excited-state electronic structure calculations to explore potential inelastic effects, and find an electronically nonadiabatic excited-state silicon diffusion pathway involving “softened” Si–C bonding that presents an ~2 eV lower diffusion barrier than the ground-state pathway. Beam-induced transition rates to this state indicate that the excited-state pathway is accessible through irradiation of the defect site. However, even in the limit of fully elastic scattering, upward nonadiabatic transitions are also possible along the diffusion coordinate, increasing the diffusion barrier and further demonstrating the potential for electronic nonadiabaticity to influence beam-induced atomic transformations in materials. Additionally, we also propose some experimentally testable signatures of such excited-state pathways.

77 NANOSCIENCE AND NANOTECHNOLOGY↗
DOE OSTI2018

Decoupling carrier concentration and electron-phonon coupling in oxide heterostructures observed with resonant inelastic x-ray scattering

In this paper, we report the observation of multiple phonon satellite features in ultra thin superlattices of form n SrIrO 3 / m SrTiO 3 using resonant inelastic x-ray scattering. As the values of n and m vary the energy loss spectra show a systematic evolution in the relative intensity of the phonon satellites. Using a closed-form solution for the RIXS cross section, we extract the variation in the electron-phonon coupling strength as a function of n and m . Combined with the negligible carrier doping into the SrTiO 3 layers, these results indicate that tuning of the electron-phonon coupling can be effectively decoupled from doping. In conclusion, this work showcases both a feasible method to extract the electron-phonon coupling in superlattices and unveils a potential route for tuning this coupling which is often associated with superconductivity in SrTiO 3 -based systems.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Electron Tunneling and X-Ray Photoelectron Spectroscopy Studies of the Superconducting Properties of Nitrogen-Doped Niobium Resonator Cavities

Scanning tunneling microscopy and spectroscopy and X-ray photoelectron spectroscopy (XPS) have been used to investigate the differences between the surface electronic structures and chemical structure of typically prepared and N-doped Nb cutouts from superconducting radio frequency (SRF) cavities. The goal of this work is to get insights into the fundamental physics and materials mechanisms behind the striking decrease of the surface resistance with the radiofrequency magnetic field, which has been observed by many groups on N-doped Nb cavities. In particular, we address the effects of N-doping on the superconducting properties at the surface of SRF cavities. XPS measurements reveal a significantly more oxidized Nb 3d states on the N-doped Nb surfaces which is confirmed by tunneling spectroscopy measurements. Analysis of the tunneling spectra in the framework of a recent model (A. Gurevich and T. Kubo Phys. Rev. B 96, 184515 (2017)) shows that the N-doping greatly reduces local distribution of superconducting properties on the surface, causes a significant shrinkage of the metallic suboxide and changes the contact resistance between the metallic suboxide and the bulk niobium toward an optimum value, resulting in a lower surface resistance. Combination of these factors enables one to effectively tune the density of states at the surface and to reveal the decrease of the surface resistance with the radio frequency field which follows from the BCS theory. A slightly reduced average gap and a smaller coherence length, revealed by tunneling spectroscopy in the vortex cores, have been found in the N-doped Nb samples compared to typically prepared Nb samples, indicating a stronger impurity scattering caused by nitrogen doping in a moderately disordered material.

Lechner, Eric M.↗
DOE OSTI2019

Sharp Drop in the Mobility of Holes with a Decrease in Their Two-Dimensional Concentration by an External Voltage in Boron δ-Doped Diamond Layers

It is shown, both analytically and numerically, that the hole mobility in boron δ-doped (i.e., with a thickness on the order of several lattice constants) diamond layers drops with a decrease in their two-dimensional concentration during depletion of the δ-doped layer by an external voltage. This drop is most pronounced for the maximum initial two-dimensional hole concentrations ~ 3 × 10{sup 13} cm{sup –2} (limited from above by the condition for the possibility of their significant reduction without the electrical breakdown of diamond). This is explained by a decrease in the degree of screening of scattering Coulomb potentials of ionized boron atoms and an increase in the scattering efficiency of degenerate holes from these atoms due to a drop in the kinetic energy of holes. The corresponding calculations of the transport scattering cross section of holes are performed beyond the Born approximation (i.e., perturbation theory), which is inapplicable for boron δ-doped diamond layers. The predicted effect can be used to increase the efficiency of source-to-drain current modulation by a gate voltage in diamond field-effect transistors (FETs) with δ-doped conduction channels.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2018

Single-Doped and Multidoped Transition-Metal (Mn, Fe, Co, and Ni) ZnO and Their Electrocatalytic Activities for Oxygen Reduction Reaction

The electrochemical oxygen reduction reaction (ORR) is the limiting half-reaction of fuel cells, which is mediated by using platinum-based catalysts. Hence, the development of low-cost, active ORR catalysts is highly required to make fuel cell technology commercially available. In this report, transition-metal (TM; Mn, Fe, Co, and Ni) single-doped and multidoped (MD) ZnO nanocrystals (ZNs) were prepared for use as ORR catalysts using a simple precipitation method. The effects of single doping and multidoping on the structure, morphology, and properties of the TM-doped ZNs were analyzed using X-ray diffraction (XRD), scanning electron microscopy (SEM), X-ray fluorescence, X-ray photoelectron microscopy, electron paramagnetic resonance, and Raman and photoluminescence (PL) spectroscopies. The XRD results reveal that synthesized ZnO samples retained a pure hexagonal wurtzite crystal structure, even at high levels of multidoping (nominal 20%). SEM analyses show that the morphology of the prepared ZNs varies with the doping elements, doping mode, and amounts of doping. The observation of peak shifting and peak intensity changes in Raman studies confirms the presence of dopants in ZnO. The PL investigation reveals that the incorporation of dopants into the ZnO structure increases the oxygen vacancies within the materials. The highest oxygen vacancies were present in Mn-doped ZnO and 15% MD ZnO among the single-doped and MD samples, respectively. Linear-sweep voltammetry studies conclude that doped ZnO shows enhanced ORR activity compared to the undoped samples. The Mn-doped ZnO and 15% MD ZnO exhibited the highest ORR activity among the prepared single-doped and MD ZN samples, respectively. In comparison, single doping showed better ORR activity than the multidoping system. The enhanced ORR activity of the synthesized ZN materials correlates with the amount of oxygen vacancies present in the samples. Finally, the enhanced activity of TM-doped ZnO suggests that these materials can be used as potential, low-cost electrocatalysts for ORR in fuel cell technology.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2025

Magnetostriction and temperature dependent Gilbert damping in boron doped Fe 80 ⁢Ga 20 thin films

Magnetic thin films with strong magnetoelastic coupling and low Gilbert damping are key materials for many magnetoelectric devices. Here, we investigated the effects of boron doping concentration on magnetostriction and temperature dependent Gilbert damping in magnetron sputtered (Fe 80 ⁢Ga 20 ) 1−𝑥 ⁢B 𝑥 films. A crystalline to amorphous structural transition was observed for a boron content near 8% and coincided with a decrease in coercivity from 76 Oe to 3 Oe. A 10% doping concentration is optimal for achieving both large magnetostriction of 48.8 ppm and low Gilbert damping of 6×10 −3 . The temperature dependence of the damping shows an increase at low temperatures with a peak around 40 K, and we associate the relative increase Δ⁢𝛼/𝛼 RT with magnetoelastic contributions to the damping, which has a maximum of 55.7% at 8% boron. An increase in the inhomogeneous linewidth broadening was observed in the structural transition regime at about 8% boron concentration. Furthermore, this study suggests that incorporation of glass forming elements, in this case boron, into Fe 80 ⁢Ga 20 is a practical pathway for simultaneously achieving enhanced magnetoelastic coupling and reduced Gilbert damping.

Cryogenics↗