Hysteretic internal friction due to the break-down of attractive dislocation junctions. II - Quantitative development of the model
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Device incorporating specially-configured pure metal transition region can be developed to simulate a nerve cell. Combination of such cells may be formed to simulate an eye or brain and can be used in recognizing characters and other visual images.
The technical feasibility of using the corona discharge technique as a means for producing efficient silicon solar cells is elaborated.
The results of extensive computer (finite element, finite difference and numerical integration), thermal, fatigue, and special analyses of critical portions of a large pressurized, cryogenic wind tunnel (National Transonic Facility) are presented. The computer models, loading and boundary conditions are described. Graphic capability was used to display model geometry, section properties, and stress results. A stress criteria is presented for evaluation of the results of the analyses. Thermal analyses were performed for major critical and typical areas. Fatigue analyses of the entire tunnel circuit are presented.
The results of extensive computer (finite element, finite difference and numerical integration), thermal, fatigue, and special analyses of critical portions of a large pressurized, cryogenic wind tunnel (National Transonic Facility) are presented. The computer models, loading and boundary conditions are described. Graphic capability was used to display model geometry, section properties, and stress results. A stress criteria is presented for evaluation of the results of the analyses. Thermal analyses were performed for major critical and typical areas. Fatigue analyses of the entire tunnel circuit are presented.
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A new metal-oxide-metal device (Ni-NiO-Ni, Edge MOM) which is stable, reproducibly fabricated, and with a 10 to the -10th sq cm tunneling area is presented. Performing detection experiments, the device's nonlinear I-V characteristic is shown to be invariant at audio frequencies, 10.6, 3.39, and 0.6328 microns. Similar devices with 10 to the -8th sq cm tunneling areas perform as well as the Edge MOM's in the visible and the near-infrared range, but deteriorate in performance at the 10-micron range. A dominant competing effect is a thermal-induced signal, which increases with frequency and temperature. Coupling mechanisms at the various regimes are investigated. The device can serve as a broad-band detector and mixer, and might in the future be a basic element of broad-band amplifiers and oscillators.
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Measurements of mean and fluctuating axial velocity have for the first time been made in a seeded pipe flow with a semiconductor laser velocimeter. Several compact velocimeters have been constructed using laser diodes. While the intended applications have restricted the final instrument to operate in a coaxial backscatter mode, operation has been demonstrated in forward and side scattering modes. In all cases the instrument could be classed as dual beam. An instrument has been constructed to be installed in a model airfoil and will be mechanically driven to measure the flow over a 75-mm chord distance. The instrument occupies a volume measuring 100 mm x 100 mm x 40 mm. The compactness has been aided by using an avalanche photodiode instead of a photomultiplier tube.
Experiments were completed which indicate that single-pulse, liquid-phase epitaxial regrowth is the optimum technique for pulsed electron beam annealing of ion implantation damage in silicon wafers. An electron beam which covers the entire area of the wafer was chosen for the solar cell processor. Beam control experiments to improve beam propagation and to test the concept of partial space charge and current neutralization were initiated. The electrical parameters of the pulsed electron beam subsystem were chosen on the basis of computer calculations and past experience in pulsed electron accelerator design and operation. The pulser, designated SPI-PULSE 7000, is designed to anneal 10 cm diameter silicon wafers at a rate of 30 per minute. The preliminary design of the major elements of the SPI-PULSE 7000 was completed, and the detailed design of many of the components begun. These elements include a capacitive energy store and charging system, an electron accelerator, a beam control system, a wafer handling system and pressure and vacuum assemblies.
The effects of process variations on the fixed-charge density, interface-state density, and tunneling properties of tunnel oxides on (100) silicon are discussed. Annealing the oxide in nitrogen reduces the fixed-charge and interface-state densities substantially, but also causes a marked increase in oxide capacitance. Anneals in forming gas before metallization alter the interface-state distribution and decrease the insulating qualities of the tunneling oxides. Postmetallization anneals in forming gas reduce the interface-state density to 1 x 10 to the 11th e/sq cm V or below, and appear not to affect the current through the oxide. No evidence for metal-induced interface states is observed.
The major component fabrication program was completed. Assembly and system testing of the pulsed electron beam annealing machine are described. The design program for the transport reached completion, and the detailed drawings were released for fabrication and procurement of the long lead time components.
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