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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 559 records · Page 31

Unraveling the origin of antiferromagnetic coupling at YIG/permalloy interface

We investigate the structural and electronic origin of antiferromagnetic (AFM) coupling in the yttrium iron garnet (YIG) and permalloy (Ni 80 ⁢Fe 20 , Py) bilayer system at the atomic level. Ferromagnetic resonance (FMR) spectra reveal unique hybrid modes in samples prepared with surface ion milling, indicative of antiferromagnetic exchange coupling at the YIG/Py interface. Using atomic resolution scanning transmission electron microscopy (STEM), we found that AFM coupling appears at the YIG/Py interface of the tetrahedral YIG surface formed with ion milling. Here, the STEM measurements suggest that the interfacial AFM coupling is predominantly driven by an oxygen-mediated superexchange coupling mechanism, which is confirmed by the density-functional theory (DFT) calculations to be energetically favorable. Thus, the combined experimental and theoretical results reveal the critical role of interfacial atomic structure in determining the type of magnetic coupling in a YIG/ferromagnet heterostructure, and prove that the interfacial structure can be experimentally tuned by surface ion milling.

36 MATERIALS SCIENCE↗

Atomistic insights into the heat conductance across the interfaces between erythritol and different metals: A non-equilibrium molecular dynamics study

The heat conductance across the interface between a phase change material (PCM) and the metal shell is important for thermal design of latent heat storage systems. Non-equilibrium molecular dynamics simulations were carried out in this work to unravel, at the atomistic level, the interfacial heat conductance mechanisms between erythritol (the most promising medium-temperature polyol PCM) and two different metals (i.e., copper and aluminum). The interfacial contact ratio was introduced as a parameter to represent different contact conditions at the interfaces, for example, different surface roughness levels of the metals. It was found that with the increase of interfacial contact ratio, the temperature difference between the erythritol/metal interfaces decreases, whereas the interfacial heat transfer coefficient increases gradually. At the perfect contact condition, i.e., the interfacial contact ratio reaches 100%, the interfacial heat transfer coefficients across the erythritol/Cu and erythritol/Al interfaces were predicted to be 398 ± 26 MW/m 2 K and 544 ± 11 MW/m 2 K, respectively. The interfacial heat conductance of erythritol/Al is better than that of erythritol/Cu. The mismatch of atomic spectral density across the interfaces between erythritol and the two metals was analyzed and distinguished. These results could guide the selection of packaging materials and the thermal design of erythritol-based latent heat storage systems.

32 ENERGY CONSERVATION, CONSUMPTION, AND UTILIZATI↗

Anisotropy of the energetic neutral atom flux in the heliosphere

Characteristics of the energetic neutral atoms born at the heliospheric interface are considered for plasma flow structure resulting from a two-shock model of the interaction between the solar wind and the interstellar medium. The energy distributions of heliospheric energetic neutral atoms (HELENAs) are calculated and it is shown that the HELENA flux is highly anisotropic at the earth's orbit. The characteristics of the HELENA flux are highly sensitive to the size of the heliosphere. This supports the conclusion that measurements of HELENAs from the earth's orbit would provide an efficient tool to remotely study the heliosphere.

Gruntman, Michael A.↗

Large interface diffusion in endotaxial growth of MnP films on GaP substrates

The metal organic vapor deposition of MnP films on GaP (100) substrates is shown to have a substantial endotaxial component. A study of the growth time evolution of the endotaxial depths of MnP grains reveals a diffusion-controlled growth with a relatively large diffusion coefficient of Mn in GaP. The value (2.2 ± 1.5) × 10⁻¹⁵ (cm²/s) obtained at 650 °C is at least two orders of magnitude larger than the reported Mn diffusion in bulk GaP. GaP surface mounds provide further indirect evidence that this large diffusion coefficient is concurrent with the out-diffusion of Ga atoms at the growing MnP/GaP interface. No trace of dislocations could be observed at or near this interface, which strongly suggests that Mn diffusion occurs through vacant sites generated by the difference between the crystallographic structures of MnP and GaP.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Chemical mixing at “Al on Fe” and “Fe on Al” interfaces

The chemical mixing at the “Al on Fe” and “Fe on Al” interfaces was studied by molecular dynamics simulations of the layer growth and by {sup 57}Fe Mössbauer spectroscopy. The concentration distribution along the layer growth direction was calculated for different crystallographic orientations, and atomically sharp “Al on Fe” interfaces were found when Al grows over (001) and (110) oriented Fe layers. The Al/Fe(111) interface is also narrow as compared to the intermixing found at the “Fe on Al” interfaces for any orientation. Conversion electron Mössbauer measurements of trilayers—Al/{sup 57}Fe/Al and Al/{sup 57}Fe/Ag grown simultaneously over Si(111) substrate by vacuum evaporation—support the results of the molecular dynamics calculations.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

A novel artificial condensed matter lattice and a new platform for one-dimensional topological phases

Engineered lattices in condensed matter physics, such as cold-atom optical lattices or photonic crystals, can have properties that are fundamentally different from those of naturally occurring electronic crystals. We report a novel type of artificial quantum matter lattice. Our lattice is a multilayer heterostructure built from alternating thin films of topological and trivial insulators. Each interface within the heterostructure hosts a set of topologically protected interface states, and by making the layers sufficiently thin, we demonstrate for the first time a hybridization of interface states across layers. In this way, our heterostructure forms an emergent atomic chain, where the interfaces act as lattice sites and the interface states act as atomic orbitals, as seen from our measurements by angle-resolved photoemission spectroscopy. By changing the composition of the heterostructure, we can directly control hopping between lattice sites. We realize a topological and a trivial phase in our superlattice band structure. We argue that the superlattice may be characterized in a significant way by a one-dimensional topological invariant, closely related to the invariant of the Su-Schrieffer-Heeger model. Our topological insulator heterostructure demonstrates a novel experimental platform where we can engineer band structures by directly controlling how electrons hop between lattice sites.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

XPS Studies of LSCF Interfaces after Cell Testing

The motivation of this investigation is to explore the possibility of using the depth profile capability of XPS to study interfaces after SOFC button cell testing. The literature uses XPS to study various cathode materials but has devoted little to the understanding of various cathode interfaces especially after testing. In this work, an SOFC button cell is first tested, and then, the LSCF cathode, barrier layer, and electrolyte are sputtered away to study the behavior of different interfaces. This work has shown that some elements have moved into other layers of the SOFC cell. It is argued that the migration of the elements is partly due to a redeposition mechanism after atoms are sputtered away, while the rest is due to interdiffusion between the SDC and YSZ layers. However, additional work is needed to better understand the mechanism by which atoms move around at different interfaces. In conclusion, the cell electrochemical performance is also discussed in some details but is not the focus.

42 ENGINEERING↗

A New Concurrent Multiscale Methodology for Coupling Molecular Dynamics and Finite Element Analyses

The coupling of molecular dynamics (MD) simulations with finite element methods (FEM) yields computationally efficient models that link fundamental material processes at the atomistic level with continuum field responses at higher length scales. The theoretical challenge involves developing a seamless connection along an interface between two inherently different simulation frameworks. Various specialized methods have been developed to solve particular classes of problems. Many of these methods link the kinematics of individual MD atoms with FEM nodes at their common interface, necessarily requiring that the finite element mesh be refined to atomic resolution. Some of these coupling approaches also require simulations to be carried out at 0 K and restrict modeling to two-dimensional material domains due to difficulties in simulating full three-dimensional material processes. In the present work, a new approach to MD-FEM coupling is developed based on a restatement of the standard boundary value problem used to define a coupled domain. The method replaces a direct linkage of individual MD atoms and finite element (FE) nodes with a statistical averaging of atomistic displacements in local atomic volumes associated with each FE node in an interface region. The FEM and MD computational systems are effectively independent and communicate only through an iterative update of their boundary conditions. With the use of statistical averages of the atomistic quantities to couple the two computational schemes, the developed approach is referred to as an embedded statistical coupling method (ESCM). ESCM provides an enhanced coupling methodology that is inherently applicable to three-dimensional domains, avoids discretization of the continuum model to atomic scale resolution, and permits finite temperature states to be applied.

Yamakov, Vesselin↗

An Embedded Statistical Method for Coupling Molecular Dynamics and Finite Element Analyses

The coupling of molecular dynamics (MD) simulations with finite element methods (FEM) yields computationally efficient models that link fundamental material processes at the atomistic level with continuum field responses at higher length scales. The theoretical challenge involves developing a seamless connection along an interface between two inherently different simulation frameworks. Various specialized methods have been developed to solve particular classes of problems. Many of these methods link the kinematics of individual MD atoms with FEM nodes at their common interface, necessarily requiring that the finite element mesh be refined to atomic resolution. Some of these coupling approaches also require simulations to be carried out at 0 K and restrict modeling to two-dimensional material domains due to difficulties in simulating full three-dimensional material processes. In the present work, a new approach to MD-FEM coupling is developed based on a restatement of the standard boundary value problem used to define a coupled domain. The method replaces a direct linkage of individual MD atoms and finite element (FE) nodes with a statistical averaging of atomistic displacements in local atomic volumes associated with each FE node in an interface region. The FEM and MD computational systems are effectively independent and communicate only through an iterative update of their boundary conditions. With the use of statistical averages of the atomistic quantities to couple the two computational schemes, the developed approach is referred to as an embedded statistical coupling method (ESCM). ESCM provides an enhanced coupling methodology that is inherently applicable to three-dimensional domains, avoids discretization of the continuum model to atomic scale resolution, and permits finite temperature states to be applied.

Saether, E.↗

Interfaces between hexagonal and cubic oxides and their structure alternatives

Multi-layer structure of functional materials often involves the integration of different crystalline phases. The film growth orientation thus frequently exhibits a transformation, owing to multiple possibilities caused by incompatible in-plane structural symmetry. Nevertheless, the detailed mechanism of the transformation has not yet been fully explored. Here we thoroughly probe the heteroepitaxially grown hexagonal zinc oxide (ZnO) films on cubic (001)-magnesium oxide (MgO) substrates using advanced scanning transition electron microscopy, X-ray diffraction and first principles calculations, revealing two distinct interface models of (001) ZnO/(001) MgO and (100) ZnO/(001) MgO. Here we have found that the structure alternatives are controlled thermodynamically by the nucleation, while kinetically by the enhanced Zn adsorption and O diffusion upon the phase transformation. Finally, this work not only provides a guideline for the interface fabrication with distinct crystalline phases but also shows how polar and non-polar hexagonal ZnO films might be manipulated on the same cubic substrate.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Site-Specific Preparation of Intact Solid–Liquid Interfaces by Label-Free In Situ Localization and Cryo-Focused Ion Beam Lift-Out

Abstract Scanning transmission electron microscopy (STEM) allows atomic scale characterization of solid–solid interfaces, but has seen limited applications to solid–liquid interfaces due to the volatility of liquids in the microscope vacuum. Although cryo-electron microscopy is routinely used to characterize hydrated samples stabilized by rapid freezing, sample thinning is required to access the internal interfaces of thicker specimens. Here, we adapt cryo-focused ion beam (FIB) “lift-out,” a technique recently developed for biological specimens, to prepare intact internal solid–liquid interfaces for high-resolution structural and chemical analysis by cryo-STEM. To guide the milling process we introduce a label-free in situ method of localizing subsurface structures in suitable materials by energy dispersive X-ray spectroscopy (EDX). Monte Carlo simulations are performed to evaluate the depth-probing capability of the technique, and show good qualitative agreement with experiment. We also detail procedures to produce homogeneously thin lamellae, which enable nanoscale structural, elemental, and chemical analysis of intact solid–liquid interfaces by analytical cryo-STEM. This work demonstrates the potential of cryo-FIB lift-out and cryo-STEM for understanding physical and chemical processes at solid–liquid interfaces.

36 MATERIALS SCIENCE↗

Temperature effects on the atomic structure and kinetics in single crystal electrochemistry

The influence of temperature on the atomic structure at the electrochemical interface has been studied using in-situ surface x-ray scattering (SXS) during the formation of metal monolayers on a Au(111) electrode. For the surface reconstruction of Au(111), higher temperatures increase the mobility of surface atoms in the unreconstructed phase which then determines the surface ordering during the formation of the reconstruction. For the underpotential deposition (UPD) systems, the surface diffusion of the depositing metal adatoms is significantly reduced at low temperatures which results in the frustration of ordered structures in the case of Cu UPD, occurring on a Br-modified surface, and in the formation of a disordered Ag monolayer during Ag UPD. The results indicate that temperature changes affect the mass transport and diffusion of metal adatoms on the electrode surface. This demonstrates the importance of including temperature as a variable in studying surface structure and reactions at the electrochemical interface.

Gründer, Yvonne↗

Atomic-Scale Insights into Surface Lattice Oxygen Activation at the Spinel/Perovskite interface of Co 3 O 4 /La 0.3 Sr 0.7 CoO 3

Surface lattice oxygen in transition-metal oxides plays a vital role in catalytic processes. Mastering activation of surface lattice oxygen and identifying the activation mechanism are crucial for the development and design of advanced catalysts. A strategy is now developed to create a spinel Co 3 O 4 /perovskite La 0.3 Sr 0.7 CoO 3 interface by in situ reconstruction of the surface Sr enrichment region in perovskite LSC to activate surface lattice oxygen. XAS and XPS confirm that the regulated chemical interface optimizes the hybridized orbital between Co 3d and O 2p and triggers more electrons in oxygen site of LSC transferred into lattice of Co 3 O 4 , leading to more inactive O 2- transformed into active O 2-x . Furthermore, the activated Co 3 O 4 /LSC exhibits the best catalytic activities for CO oxidation, oxygen evolution, and oxygen reduction. This work would provide a fundamental understanding to explain the activation mechanism of surface oxygen sites.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Metal–Metal Oxide Catalytic Interface Formation and Structural Evolution: A Discovery of Strong Metal–Support Bonding, Ordered Intermetallics, and Single Atoms

In-depth investigation of metal–metal oxide interactions and their corresponding evolution is of paramount importance to heterogeneous catalysis as it allows the understanding and maneuvering of the structure of catalytic motifs. Herein, using a series of core/shell metal/iron oxide (M/FeO x , M = Pd, Pt, Au) nanoparticles and through a combination of in situ and ex situ electron and X-ray investigations, we revealed anomalous and dissimilar M–FeO x interactions among different systems under reducing conditions. Further, Pd interacts strongly with FeO x after high-temperature reductive treatment, featured by the formation of Pd single atoms in the FeO x matrix and increased Pd–Fe bonding, while Pt transforms into ordered PtFe intermetallics and Pt single atoms immediately upon the coating of FeO x . In contrast, Au does not manifest strong bonding with FeO x . As a proof of concept of tailoring metal–metal oxide interactions for catalysis, optimized Pd/FeO x demonstrates 100% conversion and 86.5% selectivity at 60 °C for acetylene semihydrogenation.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Effects of three-dimensional Cu/Nb interfaces on strengthening and shear banding in nanoscale metallic multilayers

Manipulation of the atomic-scale structure of two-dimensional (2D) interfaces have been shown to provide nanocomposites with enhanced strength, deformability, and radiation damage resistance. In comparison with 2D interfaces, here we investigate the mechanical response of nanocomposites containing three-dimensional (3D) Cu/Nb interfaces consisting of a chemical/structural gradient separating pure Cu and Nb layers, through which the lattice mismatch between face-centered cubic Cu and body-centered cubic Nb is accommodated over a distance of several nanometers. Furthermore, it is demonstrated that 3D interfaces increase the yield and flow strength by 50% and 22%, respectively, over composites containing 2D interfaces at similar layer thicknesses. After 14% compressive strain, the onset of shear banding results in co-deformation of both Cu and Nb phases within and outside of the shear band. We conclude with a discussion of the role of interface structure in shear band formation and growth in 3D Cu/Nb.

3-dimensional interface↗

STRUCTURE OF THE INTERSTELLAR BOUNDARY EXPLORER RIBBON FROM SECONDARY CHARGE-EXCHANGE AT THE SOLAR–INTERSTELLAR INTERFACE

In 2009, the Interstellar Boundary Explorer discovered a bright “ribbon” of energetic neutral atom (ENA) flux in the energy range ≤0.4–6 keV, encircling a large portion of the sky. This observation was not previously predicted by any models or theories, and since its discovery, it has been the subject of numerous studies of its origin and properties. One of the most studied mechanisms for its creation is the “secondary ENA” process. Here, solar wind ions, neutralized by charge-exchange with interstellar atoms, propagate outside the heliopause; experience two charge-exchange events in the dense outer heliosheath; and then propagate back inside the heliosphere, preferentially in the direction perpendicular to the local interstellar magnetic field. This process has been extensively analyzed using state-of-the-art modeling and simulation techniques, but it has been difficult to visualize. In this Letter, we show the three-dimensional structure of the source of the ribbon, providing a physical picture of the spatial and energy scales over which the secondary ENA process occurs. These results help us understand how the ribbon is generated and further supports a secondary ENA process as the leading ribbon source mechanism.

79 ASTRONOMY AND ASTROPHYSICS↗

Effect of Near-Interface Compensation of CdSeTe Absorber Layers on Solar Cell Performance

Arsenic has been shown to be an effective p-type dopant of CdTe. However, challenges remain in the fabrication of high efficiency CdTe solar cells using As. As-doped CdTe is prone to self-compensation and observed accumulation of dopant atoms in CdTe near the interface with MgZnO (MZO) suggests that this could be occurring. In this study, we use SCAPS 1-D modeling software to investigate the effect of near-interface compensation. We consider three cases: shallow donors, deep recombination centers, and a thin layer of excess positive charge accumulation. All of these cases are shown to have significant effects on the current-voltage characteristics, while the thin charge layer also affects capacitance-voltage measurements.

arsenic↗

A Chain Model of a Zigzag Contact of Lateral Graphene-Like Heterostructures

A simple structural model is proposed for the zigzag interface formed by contacting two-dimensional graphene-like compounds AB and CD (both free and formed on a metal). For the graphene–hexagonal boron nitride system, analytical expressions for the electron spectrum, density of states, and atom occupation numbers at the interface are obtained. The results of calculating the densities of states and occupation numbers within two alternative approximations are in good agreement.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗