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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 559 records · Page 31
All sourcesNASA NTRSDOE OSTI
NASA NTRS1985

Theoretical studies of dissociative recombination

The calculation of dissociative recombination rates and cross sections over a wide temperature range by theoretical quantum chemical techniques is described. Model calculations on electron capture by diatomic ions are reported which illustrate the dependence of the rates and cross sections on electron energy, electron temperature, and vibrational temperature for three model crossings of neutral and ionic potential curves. It is shown that cross sections for recombination to the lowest vibrational level of the ion can vary by several orders of magnitude depending upon the position of the neutral and ionic potential curve crossing within the turning points of the v = 1 vibrational level. A new approach for calculating electron capture widths is reported. Ab initio calculations are described for recombination of O2(+) leading to excited O atoms.

Guberman, S. L.↗
NASA NTRS2016

Electron Energetics in the Martian Dayside Ionosphere: Model Comparisons with MAVEN Data

This paper presents a study of the energetics of the dayside ionosphere of Mars using models and data from several instruments on board the Mars Atmosphere and Volatile EvolutioN spacecraft. In particular, calculated photoelectron fluxes are compared with suprathermal electron fluxes measured by the Solar Wind Electron Analyzer, and calculated electron temperatures are compared with temperatures measured by the Langmuir Probe and Waves experiment. The major heat source for the thermal electrons is Coulomb heating from the suprathermal electron population, and cooling due to collisional rotational and vibrational CO2 dominates the energy loss. The models used in this study were largely able to reproduce the observed high topside ionosphere electron temperatures (e.g., 3000 K at 300 km altitude) without using a topside heat flux when magnetic field topologies consistent with the measured magnetic field were adopted. Magnetic topology affects both suprathermal electron transport and thermal electron heat conduction. The effects of using two different solar irradiance models were also investigated. In particular, photoelectron fluxes and electron temperatures found using the Heliospheric Environment Solar Spectrum Radiation irradiance were higher than those with the Flare Irradiance Spectrum Model-Mars. The electron temperature is shown to affect the O2(+) dissociative recombination rate coefficient, which in turn affects photochemical escape of oxygen from Mars.

magnetic topology↗
DOE OSTI2023

Structure and Electronic Properties of Mesopores in Si PV Devices with PLEO Contacts

All current state-of-the-art silicon photovoltaic (PV) devices employ some flavor of passivating contact structure to minimize detrimental recombination while providing good conductivity. These properties are most often provided by a dielectric layer (SiNx, Al2O3, or SiOx) that is in contact with the crystalline silicon (c-Si) substrate. The effectiveness of these layers is heavily dependent on the nanoscale structure of both the dielectric layers and the crystalline silicon interface. As an example, the tunneling probability for charge carriers across thin SiOx layers, a process that is critical to maintain high conductivity, is extremely sensitive to the SiOx thickness. SiOx with a thickness below 2 nm readily allows charge carrier tunneling, whereas it is impeded for greater thicknesses. In the latter case it has been shown that modifications to the thermal processing schedule can induce disruptions, or pinholes, in thick SiOx layers that allow transport of charge carriers while maintaining excellent passivation. However, this requires higher temperatures processes that may inhibit widespread adoption by industry. Recently, another option has been presented that may circumvent the necessity for high temperature processing, namely metal assisted chemical etching (MACE). MACE relies on deposition of Ag nanoparticles onto the SiOx layers with subsequent electroless etching to form mesopores in the SiOx layers that are analogous to the pinholes created with high temperature processing. The size and density can be controlled based on the Ag nanoparticle deposition conditions. The resulting contact structure is known as polysilicon on locally etched oxide (PLEO) contacts. The nanoscale structure of the mesopores in PLEO contacts define the device level observables such as recombination current (Jo) and junction resistance. In this work we present atomic resolution transmission electron microscopy (TEM) analysis of mesopores in PLEO contacts formed with a different processing conditions to connect provide insight into how the nanoscale structure of the SiOx layer influences PV device properties. Additionally, we have previously used electron beam induced current (EBIC) to probe local transport properties in Si PV devices with a SiOx layer containing pinholes due to high temperature processing. Using EBIC we were able to directly show the enhance charge carrier transport through the pinholes. Here we also employ EBIC to study non-uniformities in charge carrier recombination and transport associated with mesopores in PLEO contacts and compare these results with our previous work on devices with pinholes in the SiOx formed through high temperature processes. The products of this work provide critical information that is required to both further optimize performance of Si PV devices with PLEO contact and to drive future adoption of this technology by industry.

ENGINEERING,SOLAR ENERGY↗
DOE OSTI2020

Study of argon expulsion from the post-disruption runaway electron plateau following low-Z massive gas injection in DIII-D

Herein, a 1D radial diffusion model is developed to study the observed rapid expulsion of argon from the runaway electron plateau in the DIII-D tokamak following secondary massive low-Z (D 2 or He) gas injection. The expulsion of argon is found to be caused by further cooling of the background plasma due to the added neutrals, accompanied by recombination of argon ions and greatly increased outward radial transport rate of argon (now dominantly in neutral form) out of the runaway electron beam. After argon expulsion, power loss out of the runaway electron plateau is found to be dominated by neutral transport to the wall (rather than by radiation); this result resolves the power balance discrepancy highlighted in previous work on argon expulsion out of the runaway electron plateau.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
NASA NTRS1998

Inner Magnetospheric Superthermal Electron Transport: Photoelectron and Plasma Sheet Electron Sources

Two time-dependent kinetic models of superthermal electron transport are combined to conduct global calculations of the nonthermal electron distribution function throughout the inner magnetosphere. It is shown that the energy range of validity for this combined model extends down to the superthermal-thermal intersection at a few eV, allowing for the calculation of the en- tire distribution function and thus an accurate heating rate to the thermal plasma. Because of the linearity of the formulas, the source terms are separated to calculate the distributions from the various populations, namely photoelectrons (PEs) and plasma sheet electrons (PSEs). These distributions are discussed in detail, examining the processes responsible for their formation in the various regions of the inner magnetosphere. It is shown that convection, corotation, and Coulomb collisions are the dominant processes in the formation of the PE distribution function and that PSEs are dominated by the interplay between the drift terms. Of note is that the PEs propagate around the nightside in a narrow channel at the edge of the plasmasphere as Coulomb collisions reduce the fluxes inside of this and convection compresses the flux tubes inward. These distributions are then recombined to show the development of the total superthermal electron distribution function in the inner magnetosphere and their influence on the thermal plasma. PEs usually dominate the dayside heating, with integral energy fluxes to the ionosphere reaching 10(exp 10) eV/sq cm/s in the plasmasphere, while heating from the PSEs typically does not exceed 10(exp 8) eV/sq cm/s. On the nightside, the inner plasmasphere is usually unheated by superthermal electrons. A feature of these combined spectra is that the distribution often has upward slopes with energy, particularly at the crossover from PE to PSE dominance, indicating that instabilities are possible.

Khazanov, G. V.↗
NASA NTRS1998

Inner Magnetospheric Superthermal Electron Transport: Photoelectron and Plasma Sheet Electron Sources

Two time-dependent kinetic models of superthermal electron transport are combined to conduct global calculations of the nonthermal electron distribution function throughout the inner magnetosphere. It is shown that the energy range of validity for this combined model extends down to the superthermal-thermal intersection at a few eV, allowing for the calculation of the entire distribution function and thus an accurate heating rate to the thermal plasma. Because of the linearity of the formulas, the source terms are separated to calculate the distributions from the various populations, namely photoelectrons (PEs) and plasma sheet electrons (PSEs). These distributions are discussed in detail, examining the processes responsible for their formation in the various regions of the inner magnetosphere. It is shown that convection, corotation, and Coulomb collisions are the dominant processes in the formation of the PE distribution function, and that PSEs are dominated by the interplay between the drift terms. Of note is that the PEs propagate around the nightside in a narrow channel at the edge of the plasmasphere as Coulomb collisions reduce the fluxes inside of this and convection compresses the flux tubes inward. These distributions are then recombined to show the development of the total superthermal electron distribution function in the inner magnetosphere and their influence on the thermal plasma. PEs usually dominate the dayside heating, with integral energy fluxes to the ionosphere reaching 10(exp 10) eV/sq cm/s in the plasmasphere, while heating from the PSEs typically does not exceed 10(exp 8)eV/sq cm/s. On the nightside, the inner plasmasphere is usually unheated by superthermal electrons. A feature of these combined spectra is that the distribution often has upward slopes with energy, particularly at the crossover from PE to PSE dominance, indicating that instabilities are possible.

Khazanov, G. V.↗
DOE OSTI2025

Particle balance of deuterium during deuterium shattered pellet injection shutdown in DIII-D

A particle balance analysis was conducted during a deuterium (D 2 ) shattered pellet injection-induced plasma shutdown on the DIII-D tokamak to determine why less than 20% of the pellet material is assimilated into the core plasma by the mid-current quench (CQ). Initially, most of the D 2 is injected as frozen shards and ionized upon entering the vessel. During the thermal quench, ionized particles move to the divertors and subsequently to the center post (CP) walls, where they rapidly recycle and partially accumulate as neutrals without assimilating into the core plasma. In contrast, the particle flux to the outer midplane walls is negligible, despite being accompanied by hot plasma with electron temperatures exceeding 100 eV. During mid-CQ, volume recombination effects, although not large enough to impact overall particle balance, were significant enough to require accounting for accurate interpretation of fast-framing camera D-alpha signals and the estimation of the CP wall particle flux. In addition, toroidal asymmetries, observed in measurements of toroidal electron density perturbations and the phase of magnetohydrodynamic modes, are present throughout the shutdown and can account for a discrepancy in the assimilation rate for up to 50% of the observed D 2 particle inventory. These sources and sinks of particles and fluxes were identified using absolutely calibrated D-alpha brightness and Langmuir probes.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2022

Simulations of nonradiative processes in semiconductor nanocrystals

The description of carrier dynamics in spatially confined semiconductor nanocrystals (NCs), which have enhanced electron–hole and exciton–phonon interactions, is a great challenge for modern computational science. These NCs typically contain thousands of atoms and tens of thousands of valence electrons with discrete spectra at low excitation energies, similar to atoms and molecules, that converge to the continuum bulk limit at higher energies. Computational methods developed for molecules are limited to very small nanoclusters, and methods for bulk systems with periodic boundary conditions are not suitable due to the lack of translational symmetry in NCs. This perspective focuses on our recent efforts in developing a unified atomistic model based on the semiempirical pseudopotential approach, which is parameterized by first-principle calculations and validated against experimental measurements, to describe two of the main nonradiative relaxation processes of quantum confined excitons: exciton cooling and Auger recombination. Here, we focus on the description of both electron–hole and exciton–phonon interactions in our approach and discuss the role of size, shape, and interfacing on the electronic properties and dynamics for II–VI and III–V semiconductor NCs.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS1977

Fundamental electronic mechanisms limiting the performance of solar cells

Attention is focused on distortion in the energy band, and carrier recombination and generation rates (lifetimes), as the two dominant mechanisms. Spatial dependences associated with these two mechanisms, in the direction normal to the surface illuminated by the sun and in the direction tangential to that surface, are also emphasized as crucial factors in governing the efficiency of solar cells. Electronic parameters for the set of differential equations characterizing transport, recombination, and generation of carriers, and interband and band-bound transition rates, are studied.

Lindholm, F. A.↗
DOE OSTI2023

Single-Particle Measurements Reveal the Origin of Low Solar-to-Hydrogen Efficiency of Rh-Doped SrTiO 3 Photocatalysts

Solar-powered photochemical water splitting using suspensions of photocatalyst nanoparticles is an attractive route for economical production of green hydrogen. SrTiO 3 -based photocatalysts have been intensely investigated due to their stability and recently demonstrated near-100% external quantum yield (EQY) for water splitting using wavelengths below 360 nm. To extend the optical absorption into the visible, SrTiO 3 nanoparticles have been doped with various transition metals. Here, in this work, we demonstrate that doping SrTiO 3 nanoparticles with 1% Rh introduces midgap acceptor states which reduce the free electron concentration by 5 orders of magnitude, dramatically reducing built-in potentials which could otherwise separate electron–hole (e–h) pairs. Rhodium states also function as recombination centers, reducing the photocarrier lifetime by nearly 2 orders of magnitude and the maximum achievable EQY to 10%. Furthermore, the absence of built-in electric fields within Rh-doped SrTiO 3 nanoparticles suggests that modest e–h separation can be achieved by exploiting a difference in mobility between electrons and holes.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS1983

Pulse radiolysis of epoxy-based matrix materials

Electron beam pulse radiolysis (600 KeV, 3 nsec) experiments have been carried out on epoxy-based matrix materials. Time and wavelength resolved emission and transient absorption techniques as well as ESR studies have been utilized to identify and monitor short lived reactive intermediates resulting from energetic electron impact. An energy deactivation model based on the results of this work has been developed. Recombination of primary charged species is found to be fast, resulting in the formation of longer lived excited electronic states and radicals which control the subsequent energy deactivation.

Coulter, D. R.↗
DOE OSTI2021

Charge Transfer and Spin Dynamics in a Zinc Porphyrin Donor Covalently Linked to One or Two Naphthalenediimide Acceptors

We report quantum coherence effects on charge transfer and spin dynamics in a system having two degenerate electron acceptors are studied using a zinc 5,10,15-tri(n-pentyI)-20-phenylporphyrin (ZnP) electron donor covalently linked to either one or two naphthalene-1,8:4,5-bis(dicarboximide) (NDI) electron acceptors using an anthracene (An) spacer, ZnP-An-NDI (1) and ZnP-An-NDI 2 (2), respectively. Following photoexcitation of 1 and 2 in toluene at 295 K, femtosecond transient absorption spectroscopy shows that the electron transfer (ET) rate constant for 2 is about three times larger than that of 1, which can be accounted for by the statistical nature of incoherent ET as well as the electron couplings for the charge separation reactions. In contrast, the rate constant for charge recombination (CR) of 1 is about 25% faster than that of 2. Using femtosecond transient infrared spectroscopy and theoretical analysis, we find that the electron on NDI 2 ∙- in 2 localizes onto one of the two NDIs prior to CR, thus precluding electronically coherent CR from NDI 2 ∙- . Conversely, CR in both 1 and 2 is spin coherent as indicated by the observation of a resonance in the 3* ZnP yield following CR as a function of applied magnetic field, giving spin-spin exchange interaction energies of 2J = 210 and 236 mT, respectively, where the line width of the resonance for 2 is greater than 1. These data show that while CR is a spin-coherent process, incoherent hopping of the electron between the two NDIs in 2, consistent with the lack of delocalization noted above, results in greater spin decoherence in 2 relative to 1.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2021

Photovoltaics Research and Development: Device Architecture for Next-Generation CdTe PV. Cooperative Research and Development Final Report, CRADA Number CRD-17-00662

Despite remarkable efficiency improvements at the cell and module level, thin-film CdTe PV suffers from a significant voltage deficit compared with the ideal. The proposed solution is to build cells with fully depleted absorbers and with energy barriers front and back to direct electrons and holes in appropriate directions. Combined with minimal interfacial recombination, this approach, which is similar to the successful silicon HIT cells, circumvents the need for higher lifetimes and carrier concentration to achieve higher voltage, Colorado State is particularly well-positioned to the address the depleted absorbed architecture. It has robust single-vacuum closed-spaced-sublimation deposition chamber, currently being enhanced with new sources for CdTe alloys and grading. It has made reasonable-efficiency cells with absorbers as thin as 0.3 um, it has demonstrated electron reflection at the rear of the absorber with a continuous CdMgTe layer, it has replaced CdS with MgZnO, which has several advantages including tunable band offsets, and it has achieved 16.8% efficiency. It also has a mature suite of measurement equipment for cell evaluation and the experience to effectively analyze its results for refinement in cell fabrication. Several healthy collaborations will continue within the CdTe community.

14 SOLAR ENERGY↗
NASA NTRS1984

The electron density in M82 from the S III mid-infrared line ratio

Strong detections have been made of both the 18.7 microns and 33.4 microns lines of S III in the irregular galaxy M82. This represents the first detection of the 33.4 microns line in an extragalactic object. These measurements sample the ionized gas component which dominates the observed infrared forbidden line and infrared hydrogen recombination line emission. From the ratio of the line fluxes an electron density of 120 (+ 280, - 120) per cu cm is deduced. This result is in agreement with previous estimates of the density derived from high-frequency radio continuum measurements and an assumed emitting volume. They impose further constraints on possible starburst models.

Houck, J. R.↗
DOE OSTI2020

Area and thickness dependence of Auger recombination in nanoplatelets

The ability to control both the thickness and the lateral dimensions of colloidal nanoplatelets offers a test-bed for area and thickness dependent properties in 2D materials. An important example is Auger recombination, which is typically the dominant process by which multiexcitons decay in nanoplatelets. In this report, we uncover fundamental properties of biexciton decay in nanoplatelets by comparing the Auger recombination lifetimes based on interacting and noninteracting formalisms with measurements based on transient absorption spectroscopy. Specifically, we report that electron-hole correlations in the initial biexcitonic state must be included in order to obtain Auger recombination lifetimes in agreement with experimental measurements and that Auger recombination lifetimes depend nearly linearly on the lateral area and somewhat more strongly on the thickness of the nanoplatelet. We also connect these scalings to those of the area and thickness dependencies of single exciton radiative recombination lifetimes, exciton coherence areas, and exciton Bohr radii in these quasi-2D materials.

2D materials↗
DOE OSTI2022

Tracking carrier and exciton dynamics in mixed-cation lead mixed-halide perovskite thin films

Mixed-cation lead mixed-halide perovskites simultaneously possess structural stability and high power conversion efficiency. A thorough study of both carrier and exciton dynamics is needed to understand the photophysical properties that underpin its superior photovoltaic performance. By utilizing a broadband transient absorption spectroscopy, we observe the carrier and exciton dynamics in a FA 0.85 Cs 0.15 Pb(I 0.97 Br 0.03 ) 3 (FCPIB) perovskite by simultaneously resolving the carrier and exciton contribution to the transient change of the absorption spectra, from which the carrier density and exciton oscillator strength can be determined. Our data reveal a quick and significant conversion of the photogenerated carriers to excitons, on top of the usual carrier recombination process. Moreover, the decay of carrier density shows a change of kinetics from a second-order recombination at high pump fluence to a third-order recombination at low pump fluence. Our analysis utilizes band anharmonicity, presents an independent determination of electronic temperature and quasi-Fermi energy, and reveals an interesting interplay among the processes of carrier cooling, exciton formation/decay and carrier recombination, all as a function of time after photoexcitation. Our work demonstrates the use of pump fluence as a knob to tune the relative populations of carriers and excitons in halide perovskite materials.

36 MATERIALS SCIENCE↗
NASA NTRS1984

Analysis of the electron-beam-induced current of a polycrystalline p-n junction when the diffusion lengths of the material on either side of a grain boundary differ

The short circuit current generated by the electron beam of a scanning electron microscope in p-n junctions is reduced by enhanced recombination at grain boundaries in polycrystalline material. Frequently, grain boundaries separate the semiconductor into regions possessing different minority carrier life times. This markedly affects the short circuit current I(sc) as a function of scanning distance from the grain boundary. It will be shown theoretically that (1) the minimum of the I(sc) in crossing the grain boundary with the scanning electron beam is shifted away from the grain boundary toward the region with smaller life time (shorter diffusion length), (2) the magnitude of the minimum differs markedly from those calculated under the assumption of equal diffusion lengths on either side of the grain boundary, and (3) the minimum disappears altogether for small surface recombination velocities (s less than 10,000 cm/s). These effects become negligible, however, for large recombination velocities s at grain boundaries. For p-type silicon this happens for s not less than 100,000 cm/s.

Von Roos, O.↗
NASA NTRS1991

Theoretical prediction of the impact of Auger recombination on charge collection from an ion track

The theoretical analysis presented indicates that Auger recombination can reduce charge collection from very dense ion tracks in silicon devices. It is of marginal importance for tracks produced by 270-MeV krypton, and therefore it is of major importance for ions exhibiting a significantly larger loss. The analysis shows that recombination loss is profoundly affected by track diffusion. As the track diffuses, the density and recombination rate decrease so fast that the linear density (number of electron-hole pairs per unit length) approaches a nonzero limiting value as t approaches infinity. Furthermore, the linear density is very nearly equal to this limiting value in a few picoseconds or less. When Auger recombination accompanies charge transport processes that have much longer time scales, it can be simulated by assigning a reduced linear energy transfer to the ion.

Edmonds, Larry D.↗