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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 559 records · Page 31
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Aligning thermal and current quenches with a high density low-Z injection

The conventional approach for thermal quench (TQ) mitigation in a tokamak disruption is through a high- Z impurity injection that radiates away the plasma’s thermal energy before it reaches the wall. The downside is a robust Ohmic-to-runaway current conversion due to the radiatively clamped low post-thermal-quench electron temperature. An alternative approach is to deploy a low- Z (either deuterium or hydrogen) injection that aims to slow down the TQ, and ideally aligns it with the current quench (CQ). This approach has been investigated here via 3D MHD simulations using the PIXIE3D code. By boosting the hydrogen density, a fusion-grade plasma is dilutionally cooled at approximately the original pressure. Energy loss to the wall is controlled by a Bohm outflow condition at the boundary where the magnetic field intercepts a thin plasma sheath at the wall, in addition to Bremsstrahlung bulk losses. Robust MHD instabilities proceed as usual, while the collisionality of the plasma has been greatly increased and parallel transport is now in the Braginskii regime. The main conclusion of this study is that the decreased transport loss along open field lines due to a sufficient low- Z injection slows down the TQ rate to the order of 20 ms, aligned with the CQ timescale for a 15 MA ITER plasma.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2018

Thickness-Dependent Current Density and Flux Distribution in Thin Current-Carrying Superconducting Films Exposed to a Magnetic Field

With the rapid development of high-temperature superconductors, it is of great significance to get the precise current density and flux distribution within thin high-temperature superconducting films subjected to a transport current and an applied magnetic field. The transport current distribution and flux density in thin high-temperature superconducting films are calculated by a numerical method based on the Kim model and exponential model in this paper. The influences of transport current, applied magnetic field, width, and thickness of a superconducting film on the current distribution are discussed. The results reveal that the thickness has a significant effect on the critical current density of superconducting films.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2016

Temperature dependent simulation of diamond depleted Schottky PIN diodes

Diamond is considered as an ideal material for high field and high power devices due to its high breakdown field, high lightly doped carrier mobility, and high thermal conductivity. The modeling and simulation of diamond devices are therefore important to predict the performances of diamond based devices. In this context, we use Silvaco{sup ®} Atlas, a drift-diffusion based commercial software, to model diamond based power devices. The models used in Atlas were modified to account for both variable range and nearest neighbor hopping transport in the impurity bands associated with high activation energies for boron doped and phosphorus doped diamond. The models were fit to experimentally reported resistivity data over a wide range of doping concentrations and temperatures. We compare to recent data on depleted diamond Schottky PIN diodes demonstrating low turn-on voltages and high reverse breakdown voltages, which could be useful for high power rectifying applications due to the low turn-on voltage enabling high forward current densities. Three dimensional simulations of the depleted Schottky PIN diamond devices were performed and the results are verified with experimental data at different operating temperatures.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2022

Towards extreme fast charging of 4.6V LiCoO 2 via mitigating high-voltage kinetic hindrance

High-voltage LiCoO 2 (LCO) is an attractive cathode for ultra-high energy density lithium-ion batteries (LIBs) in the 3C markets. However, the sluggish lithium-ion diffusion at high voltage significantly hampers its rate capability. Herein, combining experiments with density functional theory (DFT) calculations, we demonstrate that the kinetic limitations can be mitigated by a facial Mg 2+ +Gd 3+ co-doping method. The as-prepared LCO shows significantly enhanced Li-ion diffusion mobility at high voltage, making more homogenous Li-ion de/intercalation at a high-rate charge/discharge process. The homogeneity enables the structural stability of LCO at a high-rate current density, inhibiting stress accumulation and irreversible phase transition. When used in combination with a Li metal anode, the doped LCO shows an extreme fast charging (XFC) capability, with a superior high capacity of 193.1 mAhg -1 even at the current density of 20C and high-rate capacity retention of 91.3% after 100 cycles at 5C. In conclusion, this work provides a new insight to prepare XFC high-voltage LCO cathode materials.

25 ENERGY STORAGE↗
DOE OSTI2025

Bridging interfacial properties and cell performance: A multiscale model for proton-exchange-membrane fuel cells

Here, to elucidate the impact of local interfaces on mass-transport resistance and overall cell performance of low-loaded proton-exchange-membrane fuel cells (PEMFCs), we present a multiscale modeling framework incorporating a novel modified agglomerate model. The model considers three distinct Pt-electrolyte interfaces: Pt on the carbon surface covered by either ionomer or water film and Pt inside carbon nanopores. Detailed mass-transport voltage-loss breakdowns reveal that coupled agglomerate-interface-scale mass transport dominates the mass-transport loss. The ionomer poisons the exterior-Pt surface through suppressing O 2 adsorption and intrinsic ORR activity, leading to low current-density performance. Conversely, interior-Pt interface enhances the kinetic performance but limits high current-density performance due to its low interfacial permeability. The exterior-Pt/water interface demonstrates superior kinetic performance and mass transport, though its practical implementation requires ensuring proton transport. By coupling the multiscale CL properties with ink parameters, the model identifies an optimal I to C ratio of approximately 0.5, a moderate value where the ionomer content is sufficient to guarantee proton transport without fully covering the Pt surface and forming large agglomeration, thus allowing the utilization of the Pt-water interface and avoiding high mass-transport loss. Overall, the model helps unravel limiting phenomena across different operating regimes and provides routes for optimizing performance.

Cell diagnostic↗
DOE OSTI2016

Decoupling and tuning competing effects of different types of defects on flux creep in irradiated YBa 2 Cu 3 O 7-δ coated conductors

YBa 2 Cu 3 O 7-δ coated conductors (CCs) have achieved high critical current densities (J c ) that can be further increased through the introduction of additional defects using particle irradiation. However, these gains are accompanied by increases in the flux creep rate, a manifestation of competition between the different types of defects. In this paper, we study this competition to better understand how to design pinning landscapes that simultaneously increase J c and reduce creep. CCs grown by metal organic deposition show non-monotonic changes in the temperature-dependent creep rate, S(T). Notably, in low fields, there is a conspicuous dip to low S as the temperature (T) increases from ~20 to ~65 K. Oxygen-, proton-, and Au-irradiation substantially increase S in this temperature range. Focusing on an oxygen-irradiated CC, we investigate the contribution of different types of irradiation-induced defects to the flux creep rate. Specifically, we study S(T) as we tune the relative density of point defects to larger defects by annealing both an as-grown and an irradiated CC in O 2 at temperatures T A = 250 °C–600 °C. Finally, we observe a steady decrease in S(T > 20 K) with increasing T A , unveiling the role of pre-existing nanoparticle precipitates in creating the dip in S(T) and point defects and clusters in increasing S at intermediate temperatures.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2026

Density limit in peeling-limited pedestals at and above the Greenwald value in DIII-D high poloidal beta plasmas

High pressure, peeling limited pedestals with pedestal normalized beta β N,ped >2 and pedestal top density n ped at or above the Greenwald density nG have been achieved in DIII-D high poloidal beta plasmas, with high global normalized beta β N >3 and energy confinement H 98 ~1.2-1.7. Higher β N allows higher pedestal density above the Greenwald value and higher pedestal pressure, even with a low injected torque. MHD modeling confirms that the experimental profiles lie near the peeling-mode unstable boundary with high normalized pressure gradient βMHD and high edge current density. Experimental analysis and stability calculations indicate that the high poloidal beta with strong Shafranov shift, high βMHD and weak/negative magnetic shear improves the pedestal stability by decoupling the peeling and ballooning modes and stabilizing the ballooning modes, thus facilitating access to the second stable region of peeling-ballooning mode. The access to the second stable peeling-ballooning stability region opens Super-H-like channels without extremely strong shaping or strong torque injection. The high-pressure peeling pedestal allows the pedestal density to go beyond the Greenwald limit with strong ExB shear maintained: pedestal pressure increases with pedestal density even when n ped >n G , until reaching the ideal MHD instability boundary, where giant ELMs occur. The giant ELMs are dominated by a strong n=1 component and cause a large reduction of the edge pressure, but a negligible change of the core pressure, consistent with kink/peeling-mode induced instability. The pedestal recovers from the collapse and typically sustains a high baseline density, around the Greenwald limit, during the whole discharge duration. Experiments also found that internal transport barriers and n ped ~0.9nG, peeling limited pedestals could be simultaneously achieved in high β N plasmas, while an internal feedback between ITB strength and pedestal performance is found.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2019

Sub-5 nm edge-rich 1T'-ReSe 2 as bifunctional materials for hydrogen evolution and sodium-ion storage

The rhenium-based transition metal dichalcogenides (TMDs), as new members in the TMDs family, have raised great interests recently. Due to the anisotropic structure and unique photoelectric properties, they have potential applications for electrochemical energy conversion and storage. In this work, we performed density functional theory (DFT) calculations on pristine 1T'-ReSe 2 toward hydrogen evolution reaction (HER). The results indicated that the Gibbs free energy of the 1T'-ReSe 2 edge site for HER could be as small as 0.01 eV, superior to other reported TMDs. Experimentally, we developed a strategy to fabricate sub-5 nm sized 1T'-ReSe 2 nanoflakes on carbon nanotubes. Such a small size for the nanoflakes brought abundant edge exposure, which boosted the catalytic activity in the HER. Specifically, the 1T'-ReSe 2 nanoflakes needed only 23 and 60 mV overpotentials to achieve –1 and –10 mA cm –2 current densities, along with a low Tafel slope of 37 mV dec –1 and a high exchange current density of 0.3 mA cm –2 . The edge-rich and layered 1T'-ReSe 2 was also explored as an anode for sodium ion battery. The in operando X-ray absorption near edge structure (XANES) technique was applied to investigate the TMD behavior in real-time during the sodiation/desodiation process. Furthermore, the in situ results revealed that the nanosized 1T'-ReSe 2 is electrchemically reversible during discharge/charge cycles. The electrochemical test results demonstrated that 1T'-ReSe 2 could be a promising anode material for alkaline batteries.

25 ENERGY STORAGE↗
DOE OSTI2022

Thermodynamic approach for enhancing superconducting critical current performance

Abstract The addition of artificial pinning centers has led to an impressive increase in the critical current density ( J c ) of superconductors, enabling record-breaking all-superconducting magnets and other applications. The J c of superconductors has reached ~0.2–0.3 J d , where J d is the depairing current density, and the numerical factor depends on the pinning optimization. By modifying λ and/or ξ, the penetration depth and coherence length, respectively, we can increase J d . For (Y 0.77 Gd 0.23 )Ba 2 Cu 3 O y ((Y,Gd)123), we can achieve this by controlling the carrier density, which is related to λ and ξ. We can also tune λ and ξ by controlling the chemical pressure in Fe-based superconductors, i.e., BaFe 2 (As 1− x P x ) 2 films. The variation in λ and ξ leads to an intrinsic improvement in J c via J d , allowing extremely high values of J c of 130 MA/cm 2 and 8.0 MA/cm 2 at 4.2 K, consistent with an enhancement in J d of a factor of 2 for both incoherent nanoparticle-doped (Y,Gd)123 coated conductors (CCs) and BaFe 2 (As 1− x P x ) 2 films, showing that this new material design is useful for achieving high critical current densities in a wide array of superconductors. The remarkably high vortex-pinning force in combination with this thermodynamic and pinning optimization route for the (Y,Gd)123 CCs reached ~3.17 TN/m 3 at 4.2 K and 18 T ( H || c ), the highest values ever reported for any superconductor.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2023

Nanocellulose‐Carboxymethylcellulose Electrolyte for Stable, High‐Rate Zinc‐Ion Batteries

Abstract Aqueous Zn ion batteries (ZIBs) are one of the most promising battery chemistries for grid‐scale renewable energy storage. However, their application is limited by issues such as Zn dendrite formation and undesirable side reactions that can occur in the presence of excess free water molecules and ions. In this study, a nanocellulose‐carboxymethylcellulose (CMC) hydrogel electrolyte is demonstrated that features stable cycling performance and high Zn 2+ conductivity (26 mS cm −1 ), which is attributed to the material's strong mechanical strength (≈70 MPa) and water‐bonding ability. With this electrolyte, the Zn‐metal anode shows exceptional cycling stability at an ultra‐high rate, with the ability to sustain a current density as high as 80 mA cm −2 for more than 3500 cycles and a cumulative capacity of 17.6 Ah cm −2 (40 mA cm −2 ). Additionally, side reactions, such as hydrogen evolution and surface passivation, are substantially reduced due to the strong water‐bonding capacity of the CMC. Full Zn||MnO 2 batteries fabricated with this electrolyte demonstrate excellent high‐rate performance and long‐term cycling stability (>500 cycles at 8C). These results suggest the cellulose‐CMC electrolyte as a promising low‐cost, easy‐to‐fabricate, and sustainable aqueous‐based electrolyte for ZIBs with excellent electrochemical performance that can help pave the way toward grid‐scale energy storage for renewable energy sources.

25 ENERGY STORAGE↗
DOE OSTI2023

Bipolar Membranes with an Electrospun 3D Junction

Freestanding bipolar membranes (BPMs) with an entirely new and transformative morphology were fabricated and characterized. The key disruptive design element was a water-splitting/water-generation junction layer of finite thickness composed of interwoven and interlocking electrospun anion-exchange polymer (AEP) fibers and cation-exchange polymer (CEP) fibers. Methods were developed to sandwich the 3D junction layer between two pre-formed dense AEP and CEP films., with the closure of all interfiber voids, where the processing steps are easily incorporated into a commercial roll-to-roll membrane manufacturing scheme. A series of membranes were made using different polymers and junction layers to identify the optimum morphology and composition for water-splitting and water-generation applications. For water splitting, the 3D junction BPMs worked remarkably well with operating current densities at/above 1.0 A/cm2 (10X greater than commercial BPMs) at a transmembrane voltage drop of only 1.1 V. In water generation mode, the 3D junction BPMs operated at 0.5 A/cm2, a world-record current density. The membranes were found to exhibit outstanding durability and can be manufactured at scale for low cost. The high operating current densities and stable long-term operation are due to the 3D junction layer design, where there is a high interfacial area for water splitting or water generation reactions and where the interlocking fibers prevent delamination of the outer films. These new BPMs are ideal candidate materials for both existing water-splitting electrodialysis separations and new electrochemical processes, such as large-scale direct air capture of CO 2 , reactors for CO 2 reduction, self-hydrating fuel cells, and redox flow batteries.

30 DIRECT ENERGY CONVERSION↗
NASA NTRS1997

High-Temperature Superconducting/Ferroelectric Structures for Tunable Microwave Components

At the NASA Lewis Research Center, ferroelectric films, such as SrTiO3 and Ba(x)Sr(1-x)TiO3, are being used in conjunction with YBa2Cu3O(7-delta) high-temperature superconducting (HTS) thin films to fabricate tunable microwave components, such as filters, varactors, and local oscillators. These structures capitalize on the variation of the dielectric constant of the ferroelectric film upon the application of a dc electric field as well as on the low microwave losses exhibited by the high-temperature superconducting films relative to their conventional conductor counterparts. (For example, the surface resistance for a YBa2Cu3O(7-delta) thin film at 10 GHz and 77 K is more than two orders of magnitude lower than that of copper at the same frequency and temperature.) SrTiO3 and Ba(x)Sr(1-x)TiO3 films are used because their crystal structure and lattice parameters are similar to those of YBa2Cu3O(7-delta), thus enabling the growth of highly textured YBa2Cu3O(7-delta) films with high critical current densities on the underlying ferroelectric film, or alternatively, of highly textured ferroelectric film on the underlying YBa2Cu3O(7-delta) film. Our efforts have been concentrated so far in determining the deposition parameters required for optimal ferroelectric thin-film growth (i.e., maximum tunability and lowest loss) and in investigating different varactor configurations to determine which geometry is the most advantageous in terms of tunability, losses, and required bias for a given communication application. For example, we have observed that for optimized SrTiO3 films in a parallel plate capacitor, tunabilities of up to 47 percent and dissipation losses (tan d) of 0.05 are attainable at 1 MHz , 80 K, and within the 0- to 5-V bias range. In contrast, for an interdigital configuration, tunabilities of up to 70 percent and tan d ranging from 0.015 to 0.001 (depending on bias) have been observed at 1 MHz and 77 K within the 0- to 100-V bias range. Efforts are underway to use these results in developing tunable receiver front-end preselect filters as well as in low-phase noise, tunable local oscillators for K-band applications. These components represent a hitherto unavailable technology to meet the stringent performance requirements of foreseeable satellite and wireless communication systems (e.g., bandwidth, in-band insertion losses, out-of-band rejection, and noise, amongst others) in a more advantageous fashion than with currently available technology (e.g., dielectric-filled cavity and waveguide filters, and dielectric resonator oscillators). Prototypes of high-temperature superconducting/ferroelectric tunable components such as a low-phase noise K-band local oscillator, a preselect C-band filter, and a low-loss K-band phase shifter are under development at NASA Lewis.

Miranda, Felix A.↗
DOE OSTI2022

Electrochemical recovery of Nd using liquid metals (Bi and Sn) in LiCl-KCl-NdCl 3

Highly efficient recovery of Nd into liquid metals of Bi and Sn was achieved in molten LiCl-KCl-NdCl 3 electrolyte at 773–973 K by leveraging the strong interactions of Nd with liquid metals. Based on the emf measurements of Nd-Sn and Nd-Bi alloys, the activity values of Nd were determined as low as 1.1–5.8×10 –13 in both liquid metals at 973 K while the solubility of Nd was found to be 1.46 mol% in Sn and 5.65 mol% in Bi. Both liquid metals demonstrated high round-trip coulombic efficiencies (>99.3%) during deposition-removal cycles of 10–50 mA cm –2 and high recovery capacity up to approximately 20 mol% Nd beyond the solubility limit. In addition, a high Nd recovery yield (84–90%) with respect to the applied charge was confirmed based on chemical analysis of electrolysis products in Bi after constant current electrolysis (–50 mA cm –2 ) at 873–973 K. Overpotentials during the Nd deposition process were attributed to charge-transfer and mass-transport resistances based on the current-potential curve and electrochemical impedance spectroscopy. The charge-transfer kinetics of Nd deposition into liquid metals was facile with high exchange current densities at ~220 mA cm –2 . Finally, the exceptionally high recovery efficiency for Nd in the molten chloride is thought to result from strong chemical interactions (i.e., low activity) of Nd in liquid metals that encourage one-step reduction, i.e., Nd 3+ + 3e → Nd(in Bi or Sn) by effectively suppressing side reaction pathways from multivalent states (Nd 2+ and Nd 3+ ).

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2023

Interface Design for High‐Performance All‐Solid‐State Lithium Batteries

All‐solid‐state batteries suffer from high interface resistance and lithium dendrite growth leading to low Li plating/stripping Coulombic efficiency (CE) of <90% and low critical current density at high capacity. Here, in this work, both challenges are simultaneously addressed and the Li plating/stripping CE is significantly increased to 99.6% at 0.2 mA cm −2 /0.2 mAh cm −2 , and critical current density (CCD) of > 3.0 mA cm −2 /3.0 mAh cm −2 by inserting a mixed ionic‐electronic conductive (MIEC) and lithiophobic LiF‐C‐Li 3 N‐Bi nanocomposite interlayer between Li 6 PS 5 Cl electrolyte and Li anode. The highly lithiophobic LiF‐C‐Li 3 N‐Bi interlayer with high ionic conductivity (10 −5 S cm −1 ) and low electronic conductivity (3.4×10 −7 S cm −1 ) enables Li to plate on the current collector (CC) surface rather than on Li 6 PS 5 Cl surface avoiding Li 6 PS 5 Cl electrolyte reduction. During initial Li plating on CC, Li penetrates into porous LiF‐C‐Li 3 N‐Bi interlayer and lithiates Bi nanoparticles into Li 3 Bi. The lithiophilic Li 3 Bi and Li 3 N nanoparticles in LiF‐C‐Li 3 N‐Li 3 Bi sub‐interlayer will move to CC along with plated Li, forming LiF‐C/Li 3 N‐Li 3 Bi lithiophobic/lithiophilic sublayer during the following Li stripping. This interlayer enables Co 0.1 Fe 0.9 S 2 /Li 6 PS 5 Cl/Li cell with an areal capacity of 1.4 mAh cm −2 to achieve a cycle life of >850 cycles at 150 mA g −1 . The lithiophobic/lithiophilic interlayer enables solid‐state metal batteries to simultaneously achieve high energy and long cycle life.

25 ENERGY STORAGE↗
DOE OSTI2024

Low temperature recovery of OFF-state stress induced degradation of AlGaN/GaN high electron mobility transistors

Thermal annealing is a widely used strategy to enhance semiconductor device performance. However, the process is complex for multi-material multi-layered semiconductor devices, where thermoelastic stresses from lattice constant and thermal expansion coefficient mismatch may create more defects than those annealed. We propose an alternate low temperature annealing technique, which utilizes the electron wind force (EWF) induced by small duty cycle high density pulsed current. To demonstrate its effectiveness, we intentionally degrade AlGaN/GaN high electron mobility transistors (HEMTs) with accelerated OFF-state stressing to increase ON-resistance ∼182.08% and reduce drain saturation current ∼85.82% of pristine condition at a gate voltage of 0 V. We then performed the EWF annealing to recover the corresponding values back to ∼122.21% and ∼93.10%, respectively. The peak transconductance, degraded to ∼76.58% of pristine at the drain voltage of 3 V, was also recovered back to ∼92.38%. This recovery of previously degraded transport properties is attributed to approximately 80% recovery of carrier mobility, which occurs during EWF annealing. We performed synchrotron differential aperture x-ray microscopy measurements to correlate these annealing effects with the lattice structural changes. We found a reduction of lattice plane spacing of (001) planes and stress within the GaN layer under the gate region after EWF annealing, suggesting a corresponding decrease in defect density. Application of this low-temperature annealing technique for in-operando recovery of degraded electronic devices is discussed.

Physics↗
DOE OSTI2016

Doubling the critical current density in superconducting FeSe 0.5 Te 0.5 thin films by low temperature oxygen annealing

Iron chalcogenide superconducting thin films and coated conductors are attractive for potential high field applications at liquid helium temperature for their high critical current densities J c , low anisotropies, and relatively strong grain couplings. Embedding flux pinning defects is a general approach to increase the in-field performance of superconductors. However, many effective pinning defects can adversely affect the zero field or self-field J c , particularly in cuprate high temperature superconductors. Here, we report the doubling of the self-field J c in FeSe 0.5 Te 0.5 films by low temperature oxygen annealing, reaching ~3 MA/cm 2 . In-field performance is also dramatically enhanced. In conclusion, our results demonstrate that low temperature oxygen annealing is a simple and cost-efficient post-treatment technique which can greatly help to accelerate the potential high field applications of the iron-based superconductors.

36 MATERIALS SCIENCE↗
NASA NTRS1994

Electric currents and coronal heating in NOAA active region 6952

We examine the spatial and temporal relationship between coronal structures observed with the soft X-ray telescope (SXT) on board the Yohkoh spacecraft and the vertical electric current density derived from photospheric vector magnetograms obtained using the Stokes Polarimeter at the Mees Solar Observatory. We focus on a single active region: AR 6952 which we observed on 7 days during 1991 December. For 11 independent maps of the vertical electric current density co-aligned with non-flaring X-ray images, we search for a morphological relationship between sites of high vertical current density in the photosphere and enhanced X-ray emission in the overlying corona. We find no compelling spatial or temporal correlation between the sites of vertical current and the bright X-ray structures in this active region.

Metcalf, T. R.↗