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A monolithic two stage gain control amplifier has been developed using submicron gate length dual gate MESFETs fabricated on ion implanted material. The amplifier has a gain of 12 dB at 30 GHz with a gain control range of over 30 dB. This ion implanted monolithic IC is readily integrable with other phased array receiver functions such as low noise amplifiers and phase shifters.
The present disclosure includes devices for detecting photons, including avalanche photon detectors, arrays of such detectors, and circuits including such arrays. In some aspects, the detectors and arrays include a virtual beveled edge mesa structure surrounded by resistive material damaged by ion implantation and having side wall profiles that taper inwardly towards the top of the mesa structures, or towards the direction from which the ion implantation occurred. Other aspects are directed to masking and multiple implantation and/or annealing steps. Furthermore, methods for fabricating and using such devices, circuits and arrays are disclosed.
The present disclosure includes devices for detecting photons, including avalanche photon detectors, arrays of such detectors, and circuits including such arrays. In some aspects, the detectors and arrays include a virtual beveled edge mesa structure surrounded by resistive material damaged by ion implantation and having side wall profiles that taper inwardly towards the top of the mesa structures, or towards the direction from which the ion implantation occurred. Other aspects are directed to masking and multiple implantation and/or annealing steps. Furthermore, methods for fabricating and using such devices, circuits and arrays are disclosed.
Self-atom mixing induced by 310 keV gallium (Ga) ion implantation in crystalline and preamorphized germanium (Ge) at temperatures between 164 K and 623 K and a dose of 1 × 10{sup 15} cm{sup −2} is investigated using isotopic multilayer structures of alternating {sup 70}Ge and {sup nat}Ge layers grown by molecular beam epitaxy. The distribution of the implanted Ga atoms and the ion-beam induced depth-dependent self-atom mixing was determined by means of secondary ion mass spectrometry. Three different temperature regimes of self-atom mixing, i.e., low-, intermediate-, and high-temperature regimes are observed. At temperatures up to 423 K, the mixing is independent of the initial structure, whereas at 523 K, the intermixing of the preamorphized Ge structure is about twice as high as that of crystalline Ge. At 623 K, the intermixing of the initially amorphous Ge structure is strongly reduced and approaches the mixing of the crystalline material. The temperature dependence of ion-beam mixing is described by competitive amorphization and recrystallization processes.
A processing system capable of producing solar cell junctions by ion implantation followed by pulsed electron beam annealing was developed and constructed. The machine was to be capable of processing 4-inch diameter single-crystal wafers at a rate of 10(7) wafers per year. A microcomputer-controlled pulsed electron beam annealer with a vacuum interlocked wafer transport system was designed, built and demonstrated to produce solar cell junctions on 4-inch wafers with an AMI efficiency of 12%. Experiments showed that a non-mass-analyzed (NMA) ion beam could implant 10 keV phosphorous dopant to form solar cell junctions which were equivalent to mass-analyzed implants. A NMA ion implanter, compatible with the pulsed electron beam annealer and wafer transport system was designed in detail but was not built because of program termination.
Magnetic microscopy with high spatial resolution helps to solve a variety of technical problems in condensed-matter physics, electrical engineering, biomagnetism, and geomagnetism. In this work we used quantum diamond magnetic microscope (QDMM) setups, which use a dense uniform layer of magnetically-sensitive nitrogen-vacancy (NV) centers in diamond to image an external magnetic field using a fluorescence microscope. We used this technique for imaging few-micron ferromagnetic needles used as a physically unclonable function (PUF) and to passively interrogate electric current paths in a commercial 555 timer integrated circuit (IC). As part of the QDMM development, we also found a way to calculate ion implantation recipes to create diamond samples with dense uniform NV layers at the surface. This work opens the possibility for follow-up experiments with 2D magnetic materials, ion implantation, and electronics characterization and troubleshooting.
Development of a pulsed electron beam subsystem, wafer transport system, and ion implanter are discussed. A junction processing system integration and cost analysis are reviewed. Maintenance of the electron beam processor and the experimental test unit of the non-mass analyzed ion implanter is reviewed.
Indium phosphide solar cells with very thin n-type emitters have been made by both ion implantation and metal-organic chemical vapor deposition. Air mass zero efficiencies as high as 18.8 percent (NASA measurement) have been achieved. The best cells, which were those made by ion implantation, show an open-circuit voltage of 873 mV, short-circuit current of 35.7 mA/sq cm, and fill factor of 0.829. Improvements are anticipated in all three of these parameters. Internal quantum efficiency peaks at over 90 percent in the red end of the spectrum, but drops to 54 percent in the blue end. Other cells have achieved 74 percent in the blue end. A preliminary investigation of InP solar cells on foreign substrates has been carried out. Although problems have been encountered with doping of the InP by the substrate, cells of 7.1 percent efficiency on silicon and cells of 9.4 percent, efficiency on GaAs have been made.
Amorphous carbon films (a-C:H) were prepared on a microtrench (4-μm pitch and 4-μm depth), and the uniformity of film thickness and microstructure of the films on the top, sidewall, and bottom surfaces of the microtrench were evaluated by scanning electron microscopy and Raman spectroscopy. The a-C:H films were prepared by bipolar-type plasma based ion implantation and deposition (bipolar PBII&D), and the negative pulse voltage, which is the main parameter dominating the film structure, was changed from −1.0 to −15 kV. Moreover, the behavior of ions and radicals was analyzed simultaneously by combining the calculation methods of Particle-In-Cell/Monte Carlo Collision (PIC-MCC) and Direct Simulation Monte Carlo (DSMC) to investigate the coating mechanism for the microtrench. The results reveal that the thickness uniformity of a-C:H films improves with decreasing negative pulse voltage due to the decreasing inertia of incoming ions from the trench mouth, although the film thickness on the sidewall tends to be much smaller than that on the top and bottom surfaces of the trench. The normalized flux and the film thickness show similar behavior, i.e., the normalized flux or thickness at the bottom surface increases at low negative pulse voltages and then saturates at a certain value, whereas at the sidewall it monotonically decreases with increasing negative voltage. The microstructure of a-C:H films on the sidewall surface is very different from that on the top and bottom surfaces. The film structure at a low negative pulse voltage shifts to more of a polymer-like carbon (PLC) structure due to the lower incident energy of ions. Although the radical flux on the sidewall increases slightly, the overall film structure is not significantly changed because this film formation at a low negative voltage is originally dominated by radicals. On the other hand, the flux of radicals is dominant on the sidewall in the case of high negative pulse voltage, resulting in a deviation from the Raman behavior of a-C:H films deposited by bipolar PBII&D. This tendency intensifies as the negative voltage becomes greater. Also, the energy of incident ions on the sidewall of the trench increases with increasing negative voltage, which causes a shift in the Raman data of the sidewall to the bottom right corner on the figure depicting the relationship of the FWHM(G) and the G-peak position, indicating increased graphitization of a-C:H film.
The durability of TiAl is a prime concern for the implementation of TiAl into aerospace engines. Two durability issues, the effect of high temperature exposure on mechanical properties and impact resistance, have been investigated and the results are summarized in this paper. Exposure to elevated temperatures has been shown to be detrimental to the room temperature ductility of gamma alloys with the most likely mechanisms being the ingress of interstitials from the surface. Fluorine ion implantation has been shown to improve the oxidation resistance of gamma alloys, and ideally it could also improve the environmental embrittlement of high Nb content TiAl alloys. The effect of F ion implantation on the surface oxidation and embrittlement of a third generation, high Nb content TiAl alloy (Ti-45Al-5Nb-B-C) were investigated. Additionally, the ballistic impact resistance of a variety of gamma alloys, including Ti-48Al-2Cr- 2Nb, Ti-47Al-2Cr-2Nb, ABB-2, ABB-23, NCG359E, 95A and Ti-45Al-5Nb-B-C was accessed. Differences in the ballistic impact properties of the various alloys will be discussed, particularly with respect to their manufacturing process, microstructure, and tensile properties.
Bubble device technologies for spacecraft onboard memory offer improved reliability and memory functional characteristics. Recent advances include Permalloy gap devices (commercially available) whose improved performance and higher density are attributable to an asymmetric chevron pattern. Secondly, an order of magnitude increase in density at less power than the Permalloy technology is possible with the ion implant technology. A third technology, the self-structured current access system, offers another order of magnitude improvement in density and data rate, and is being studied. Capacity estimates for Permalloy gap, ion implant, and self-structured current access systems are, respectively, 10 to the 8th, 10 to the 9th, and 10 to the 10th bits, and power per unit data rate efficiencies are 140, 60, and 2 W/Mbps. A flexible modular organization system, compatible with all of these device technologies, is analyzed, and, as the system is contained in a bubble, relatively simple retrofitting is foreseen.
The large scale production of silicon solar cell array panels is discussed. The cost and performance of three manufacturing sequences designed to convert silicon sheet and wafers into solar panels is analyzed. The production of ion implanted and furnace annealed solar cells made using solar grade n- and p-type wafers is examined. The performance of production size lots is examined with regard to the relationship between the ion implant and furnace anneal parameters and the ability to form consistently good thick film screen printed contacts. The spray on antireflection coating process is evaluated. The performance of several lots of cells before and after coating is measured. The structure and refractive index of the RCA I (TiO2) coating is compared with commercial solutions. Sensitivity of coated, screen printed cells to the post heat treatment required to cure the films is assessed.
A one-step approach to synthesize ultrafine transition metal particles (size < 5 nm) in carbon substrates is highly desirable for fabricating electrodes for energy devices. Herein, cobalt ion implantation into amorphous carbon films (a:C) and hydrogenated amorphous carbon films (a:CH) was explored, with the aim of synthesizing ultrafine metallic cobalt nanoparticles at room temperature. Co ions of 30 keV energy were implanted into the carbon films to achieve a Co areal density of 1.0 ± 0.1 × 10 17 atoms cm -2 . Rutherford backscattering measurements revealed that hydrogenated amorphous carbon films gave a broader Co depth distribution compared to the amorphous carbon films. Further, cross-sectional TEM analysis revealed that hydrogenated carbon films suppressed metallic Co nanoparticle aggregation, leading to the creation of ultrafine Co nanoparticles (size < 5 nm). Co L-edge X-ray absorption spectroscopy measurements confirmed the formation of predominantly metallic Co nanoparticles by ion implantation. Results conclusively demonstrate that the presence of hydrogen (~ 28 at%) in the carbon matrix facilitates the synthesis of ultrafine metallic Co nanoparticles during Co ion implantation.
A new dual-phase nanocomposite of Ti 3 SiC 2 /SiC is being synthesized using preceramic polymers, ceramic powders, and carbon nanotubes (CNTs) designed to be suitable for advanced nuclear reactors and perhaps as fuel cladding. The material is being designed to have superior fracture toughness compared to SiC, adequate thermal conductivity, and higher density than SiC/SiC composites. This annual report summarizes the progress towards this goal and reports progress in understanding certain aspects of the material behavior but some shortcomings in achieving full density or in achieving adequate incorporation of CNTs. The measured thermal conductivity is adequate and falls into an expected range based on SiC and Ti 3 SiC 2 . Part of this study makes an initial assessment for Ti 3 SiC 2 as a barrier to fission product transport. Ion implantation was used to introduce fission product surrogates (Ag and Cs) and a noble metal (Au) in Ti 3 SiC 2 , SiC, and a synthesized at PNNL. The experimental results indicate that the implanted Ag in SiC is immobile up to the highest temperature (1273 K) applied in this study; in contrast, significant out-diffusion of both Ag and Au in MAX phase Ti₃SiC₂ occurs during ion implantation at 873 K. Cs in Ti₃SiC₂ is found to diffuse during post-irradiation annealing at 973 K, and noticeable Cs release from the sample is observed. This study may suggest caution in using Ti 3 SiC 2 as a fuel cladding material for advanced nuclear reactors operating at very high temperatures. Progress is reported in thermal conductivity modeling of SiC-based materials that is relevant to this research, as is progress in modeling the effects of CNTs on fracture strength of SiC-based materials.
The transient degradation of semiconductor device performance under irradiation has long been an issue of concern. A single high-energy charged particle can degrade or permanently destroy the microelectronic component, potentially altering the course or function of the systems. Disruption of the the crystalline structure through the introduction of quasi-stable defect structures can change properties from semiconductor to conductor. Typically, the initial defect formation phase is followed by a recovery phase in which defect-defect or defect-dopant interactions modify the characteristics of the damaged structure. In this LDRD Express, in-situ ion irradiation transmission microscopy (TEM) in-situ TEM experiments combined with atomistic simulations have been conducted to determine the feasibility of imaging and characterizing the defect structure resulting from a single cascade in silicon. In-situ TEM experiments have been conducted to demonstrate that a single ion strike can be observed in Si thin films with nanometer resolution in real time using the in-situ ion irradiation transmission electron microscope (I 3 TEM). Parallel to this experimental effort, ion implantation has been numerically simulated using Molecular Dynamics (MD). This numerical framework provides detailed predictions of the damage and follow the evolution of the damage during the first nanoseconds. The experimental results demonstrate that single ion strike can be observed in prototypical semiconductors.
We investigated the effect of the helium ion implantation on the etching rate of silicon nitride in hydrofluoric acid. Helium ions were implanted into 500-nm-thick silicon nitride film with energies from 15 keV to 35 keV. The ion fluence from 10{sup 14} cm{sup −2} to 10{sup 17} cm{sup −2} was used. All samples were investigated with a scanning electron microscope and atomic force microscope. The dependence of the etching rate on the concentration of ion-induced defects is obtained.
The results of a new research on the use of controlled dopant profiles and oxide passivation to achieve high open circuit voltage V sub oc in silicon solar cells is presented. Ion implantation has been used to obtain nearly optimal values of surface dopant concentration. The concentrations are selected so as to minimize heavy doping effects and thereby provide both high blue response and high V sub oc ion implantation technique has been successfully applied to fabrication of both n-type and p-type emitters. V sub oc of up to 660 mV is reported and AMO efficiency of 16.1% has been obtained.
A study is conducted of the tribological characteristics of Monel K-500 during rubbing in a high pressure oxygen atmosphere, upon surface treatment by ion-implanted oxygen, chromium, lead, and silver, as well as electrolyzed chromium and an electroless nickel/SiC composite. The electrolyzed chromium dramatically increased total sample wear, while other surface treatments affected sample wear only moderately. Although the ion-implant treatments reduced the average coefficient of friction at low contact pressure, higher contact pressures eliminated this improvement.