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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 559 records · Page 31
All sourcesNASA NTRSDOE OSTI
NASA NTRS2005

n/p/n Tunnel Junction InGaAs Monolithic Interconnected Module (MIM)

The Monolithic Interconnected Module (MIM), originally introduced at the First NREL thermophotovoltaic (TPV) conference, consists of low-bandgap indium gallium arsenide (InGaAs) photovoltaic devices, series interconnected on a common semi-insulating indium phosphide (inP) substrate. An infrared reflector is deposited on the back surface of the substrate to reflect photons, which were not absorbed in the first pass through the structure. The single largest optical loss in the current device occurs int he heavily doped p-type emitter. A new MIM design (pat.pend.) has been developed which flips the polarity of the conventional MIM cell (i.e., n/p rather than p/n), eliminating the need for the high conductivity p-type emitter. The p-type base of the cell is connected to the n-type lateral conduction layer through a thin InGaAs tunnel junction. 0.58 eV and 0.74 eV InGaAs devices have demonstrated reflectances above 90% for wavelengths beyond the bandgap (greater than 95% for unprocessed structures). Electrical measurements indicate minimal voltage drops across the tunnel junction (less than mV/junction under 1200K-blackbody illumnination) and fill factors that are above 70% at current densities (J(sub sc)) above 8 Angstroms per square centimeters for the 0.74eV devices.

Wilt, David M.↗
NASA NTRS2002

Packaging of microwave integrated circuits operating beyond 100 GHz

Several methods of packaging high speed (75-330 GHz) InP HEMT MMIC devices are discussed. Coplanar wirebonding is presented with measured insertion loss of less than 0.5dB and return loss better than -17 dB from DC to 110 GHz. A motherboard/daughterboard packaging scheme is presented which supports minimum loss chains of MMICs using this coplanar wirebonding method. Split waveguide block packaging approaches are presented in G-band (140-220 GHz) with two types of MMIC-waveguide transitions: E-plane probe andantipodal finline.

HEMT MMICS power amplifiers↗
NASA NTRS1999

Semiconductor Laser Line-width Measurements for Space Interferometry Applications

This work discusses results using the self-heterodyne delay atechnique to measure 1.3 um InP based DFB lasers. We will also address practical issues concerning detection and elimination of back reflections, choice of fiber length and resolution, and measurement of laser 1/f and current supply noise.

DFB laser delayed self-heterodyne interferometer l↗
NASA NTRS1996

Hydrogen Effects on GaAs Device Reliability

GaAs and InP devices in hermetically sealed packages have been observed to exhibit unacceptable degradation in both RF and DC characteristics. This degradation has been observed to occur at temperatures as low as 125oC. The source of the degradation has been linked to hydrogen gas that has been absorbed in the package's metals (Kovar, plating, etc.) and converted into atomic hydrogen within the Pt or Pd metallization of the gate structure. Subsequently, atomic hydrogen diffuses into the channel region of the FET structure and neutralizes the Si donors, resulting in a degradation of the device characteristics.

Gallium Arsenide↗
NASA NTRS1993

Photorefractive Semiconductors and Applications

Photorefractive semiconductors are attractive for information processing, becuase of fast material response, compatibility with semiconductor lasers, and availability of cross polarization diffraction for enhancing signal-to-noise ration. This paper presents recent experimental results on information processing using photorefractive GaAs, InP and CdTe, including image processing with semiconductor lasers.

Photorefractive Semiconductors↗
NASA NTRS1999

A 90 GHz Amplifier Assembled Using Flip-Chip Technology

This letter reports the performance of a novel single-stage W-band amplifier fabricated utilizing flip-chip bump-bonding. We have bump-bonded a high-speed, low-noise InP high electron mobility transistor (HEMT) device onto a separately fabricated passive circuit having a GaAs substrate.

FET amplifiers Millimeter wave FETs bump-bonding m↗
NASA NTRS2006

On-wafer vector network analyzer measurements in the 220-325 Ghz frequency band

We report on a full two-port on-wafer vector network analyzer test set for the 220-325 GHz (WR3) frequency band. The test set utilizes Oleson Microwave Labs frequency extenders with the Agilent 8510C network analyzer. Two port on-wafer measurements are made with GGB Industries coplanar waveguide (CPW) probes. With this test set we have measured the WR3 band S-parameters of amplifiers on-wafer, and the characteristics of the CPW wafer probes. Results for a three stage InP HEMT amplifier show 10 dB gain at 235 GHz [1], and that of a single stage amplifier, 2.9 dB gain at 231 GHz. The approximate upper limit of loss per CPW probe range from 3.0 to 4.8 dB across the WR3 frequency band.

coplanar waveguides↗
NASA NTRS2005

Prototype development of a Geostationary Synthetic Thinned Aperture Radiometer (GeoSTAR)

Weather prediction and hurricane tracking would greatly benefit of a continuous imaging capability of a hemisphere at millimeter wave frequencies. We are developing a synthetic thinned aperture radiometer (STAR) prototype operating from 50 to 56 GHz as a ground-based testbed to demonstrate the technologies needed to do full earth disk atmospheric temperature soundings from Geostationary orbit with very high spatial resolution. The prototype consists of a Y-array of 24 MMIC receivers that are compact units implemented with low noise InP MMIC LNAs, second harmonic I-Q mixers, low power IF amplifiers and include internal digital bias control with serial line communication to enable low cost testing and system integration. Furthermore, this prototype STAR includes independent LO and noise calibration signal phase switching circuitry for each arm of the Y-array to verify the operation and calibration of the system.

Millimeter wave low noise amplifiers↗
NASA NTRS2004

Evaluating the Credibility of Transport Processes in Simulations of Ozone Recovery using the Global Modeling Initiative Three-dimensional Model

The Global Modeling Initiative (GMI) has integrated two 36-year simulations of an ozone recovery scenario with an offline chemistry and tra nsport model using two different meteorological inputs. Physically ba sed diagnostics, derived from satellite and aircraft data sets, are d escribed and then used to evaluate the realism of temperature and transport processes in the simulations. Processes evaluated include barri er formation in the subtropics and polar regions, and extratropical w ave-driven transport. Some diagnostics are especially relevant to sim ulation of lower stratospheric ozone, but most are applicable to any stratospheric simulation. The global temperature evaluation, which is relevant to gas phase chemical reactions, showed that both sets of me teorological fields have near climatological values at all latitudes and seasons at 30 hPa and below. Both simulations showed weakness in upper stratospheric wave driving. The simulation using input from a g eneral circulation model (GMI(GCM)) showed a very good residual circulation in the tropics and Northern Hemisphere. The simulation with inp ut from a data assimilation system (GMI(DAS)) performed better in the midlatitudes than it did at high latitudes. Neither simulation forms a realistic barrier at the vortex edge, leading to uncertainty in the fate of ozone-depleted vortex air. Overall, tracer transport in the offline GML(GCM) has greater fidelity throughout the stratosphere tha n it does in the GMI(DAS)

Strahan, Susan E.↗
NASA NTRS2003

A 94 GHz RF Electronics Subsystem for the CloudSat Cloud Profiling Radar

The CloudSat spacecraft, scheduled for launch in 2004, will carry the 94 GHz Cloud Profiling Radar (CPR) instrument. The design, assembly and test of the flight Radio Frequency Electronics Subsystem (RFES) for this instrument has been completed and is presented here. The RFES consists of an Upconverter (which includes an Exciter and two Drive Amplifiers (DA's)), a Receiver, and a Transmitter Calibrator assembly. Some key performance parameters of the RFES are as follows: dual 100 mW pulse-modulated drive outputs at 94 GHz, overall Receiver noise figure < 5.0 dB, a highly stable W-band noise source to provide knowledge accuracy of Receiver gain of < 0.4 dB over the 2 year mission life, and a W-band peak power detector to monitor the transmitter output power to within 0.5 dB over life. Some recent monolithic microwave integrated circuit (MMIC) designs were utilized which implement the DA's in 0.1 micron GaAs high electron-mobility transistor (HEMT) technology and the Receiver low-noise amplifier (LNA) in 0.1 micron InP HEMT technology.

radio frequency electronics subsystem (RFES)↗
NASA NTRS1983

Visible light to electrical energy conversion using photoelectrochemical cells

Sustained conversion of low energy visible or near i.r. light (>1.25 eV) to electrical energy has been obtained using wet photoelectrochemical cells where there are no net chemical changes in the system. Stabilization of n-type semi-conductor anodes of CdS, CdSe, CdTe, GaP, GaAs and InP to photoanodic dissolution is achieved by employing selected alkaline solutions of Na.sub.2 S, Na.sub.2 S/S, Na.sub.2 Se, Na.sub.2 Se/Se, Na.sub.2 Te and Na.sub.2 Te/Te as the electrolyte. The oxidation of (poly) sulfide, (poly)selenide or (poly)telluride species occurs at the irradiated anode, and reduction of polysulfide, polyselenide or polytelluride species occurs at the dark Pt cathode of the photoelectrochemical cell. Optical to electrical energy conversion efficiencies approaching 15% at selected frequencies have been observed in some cells. The wavelength for the onset of photocurrent corresponds to the band gap of the particular anode material used in the cell.

Wrighton, Mark S.↗
NASA NTRS2008

HEMT Amplifiers and Equipment for their On-Wafer Testing

Power amplifiers comprising InP-based high-electron-mobility transistors (HEMTs) in coplanar-waveguide (CPW) circuits designed for operation at frequencies of hundreds of gigahertz, and a test set for onwafer measurement of their power levels have been developed. These amplifiers utilize an advanced 35-nm HEMT monolithic microwave integrated-circuit (MMIC) technology and have potential utility as local-oscillator drivers and power sources in future submillimeter-wavelength heterodyne receivers and imaging systems. The test set can reduce development time by enabling rapid output power characterization, not only of these and similar amplifiers, but also of other coplanar-waveguide power circuits, without the necessity of packaging the circuits.

Fung, King man↗
NASA NTRS2009

Submillimeter-Wave Amplifier Module with Integrated Waveguide Transitions

To increase the usefulness of monolithic millimeter-wave integrated circuit (MMIC) components at submillimeter-wave frequencies, a chip has been designed that incorporates two integrated, radial E-plane probes with an MMIC amplifier in between, thus creating a fully integrated waveguide module. The integrated amplifier chip has been fabricated in 35-nm gate length InP high-electron-mobility-transistor (HEMT) technology. The radial probes were mated to grounded coplanar waveguide input and output lines in the internal amplifier. The total length of the internal HEMT amplifier is 550 m, while the total integrated chip length is 1,085 m. The chip thickness is 50 m with the chip width being 320 m. The internal MMIC amplifier is biased through wire-bond connections to the gates and drains of the chip. The chip has 3 stages, employing 35-nm gate length transistors in each stage. Wire bonds from the DC drain and gate pads are connected to off-chip shunt 51-pF capacitors, and additional off-chip capacitors and resistors are added to the gate and drain bias lines for low-frequency stability of the amplifier. Additionally, bond wires to the grounded coplanar waveguide pads at the RF input and output of the internal amplifier are added to ensure good ground connections to the waveguide package. The S-parameters of the module, not corrected for input or output waveguide loss, are measured at the waveguide flange edges. The amplifier module has over 10 dB of gain from 290 to 330 GHz, with a peak gain of over 14 dB at 307 GHz. The WR2.2 waveguide cutoff is again observed at 268 GHz. The module is biased at a drain current of 27 mA, a drain voltage of 1.24 V, and a gate voltage of +0.21 V. Return loss of the module is very good between 5 to 25 dB. This result illustrates the usefulness of the integrated radial probe transition, and the wide (over 10-percent) bandwidth that one can expect for amplifier modules with integrated radial probes in the submillimeter-regime (>300 GHz).

Samoska, Lorene↗
NASA NTRS2009

NASA Tech Briefs, February 2009

Tech Briefs are short announcements of innovations originating from research and development activities of the National Aeronautics and Space Administration. They emphasize information considered likely to be transferable across industrial, regional, or disciplinary lines and are issued to encourage commercial application. Topics covered include: Measuring Low Concentrations of Liquid Water in Soil; The Mars Science Laboratory Touchdown Test Facility; Non-Contact Measurement of Density and Thickness Variation in Dielectric Materials; Compact Microwave Fourier Spectrum Analyzer; InP Heterojunction Bipolar Transistor Amplifiers to 255 GHz; Combinatorial Generation of Test Suites; In-Phase Power-Combined Frequency Tripler at 300 GHz; Electronic System for Preventing Airport Runway Incursions; Smaller but Fully Functional Backshell for Cable Connector; Glove-Box or Desktop Virtual-Reality System; Composite Layer Manufacturing with Fewer Interruptions; Improved Photoresist Coating for Making CNT Field Emitters; A Simplified Diagnostic Method for Elastomer Bond Durability; Complex Multifunctional Polymer/Carbon-Nanotube Composites; Very High Output Thermoelectric Devices Based on ITO Nanocomposites; Reducing Unsteady Loads on a Piggyback Miniature Submarine; Ultrasonic/Sonic Anchor; Grooved Fuel Rings for Nuclear Thermal Rocket Engines; Pulsed Operation of an Ion Accelerator; Autonomous Instrument Placement for Mars Exploration Rovers; Mission and Assets Database; TCP/IP Interface for the Satellite Orbit Analysis Program (SOAP); Trajectory Calculator for Finite-Radius Cutter on a Lathe; Integrated System Health Management Development Toolkit.

Source record↗
NASA NTRS2008

NASA Tech Briefs, July 2008

Topics covered include: Torque Sensor Based on Tunnel-Diode Oscillator; Shaft-Angle Sensor Based on Tunnel-Diode Oscillator; Ground Facility for Vicarious Calibration of Skyborne Sensors; Optical Pressure-Temperature Sensor for a Combustion Chamber; Impact-Locator Sensor Panels; Low-Loss Waveguides for Terahertz Frequencies; MEMS/ECD Method for Making Bi(2-x)Sb(x)Te3 Thermoelectric Devices; Low-Temperature Supercapacitors; Making a Back-Illuminated Imager with Back-Side Contact and Alignment Markers; Compact, Single-Stage MMIC InP HEMT Amplifier; Nb(x)Ti(1-x)N Superconducting-Nanowire Single-Photon Detectors; Improved Sand-Compaction Method for Lost-Foam Metal Casting; Improved Probe for Evaluating Compaction of Mold Sand; Polymer-Based Composite Catholytes for Li Thin-Film Cells; Using ALD To Bond CNTs to Substrates and Matrices; Alternating-Composition Layered Ceramic Barrier Coatings; Variable-Structure Control of a Model Glider Airplane; Axial Halbach Magnetic Bearings; Compact, Non-Pneumatic Rock-Powder Samplers; Biochips Containing Arrays of Carbon-Nanotube Electrodes; Nb(x)Ti(1-x)N Superconducting-Nanowire Single-Photon Detectors; Neon as a Buffer Gas for a Mercury-Ion Clock; Miniature Incandescent Lamps as Fiber-Optic Light Sources; Bidirectional Pressure-Regulator System; and Prism Window for Optical Alignment. Single-Grid-Pair Fourier Telescope for Imaging in Hard-X Rays and gamma Rays Range-Gated Metrology with Compact Optical Head Lossless, Multi-Spectral Data Compressor for Improved Compression for Pushbroom-Typetruments.

Source record↗