Search NASA⌕ Search

SEARCH · Search NASA

Results for “MAGNETIC SWITCHING”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 559 records · Page 31
All sourcesNASA NTRSDOE OSTI
DOE OSTI2018

Electrical control of 2D magnetism in bilayer CrI 3

Controlling magnetism via electric fields addresses fundamental questions of magnetic phenomena and phase transitions, and enables the development of electrically coupled spintronic devices, such as voltage-controlled magnetic memories with low operation energy. Previous studies on dilute magnetic semiconductors such as (Ga,Mn)As and (In,Mn)Sb have demonstrated large modulations of the Curie temperatures and coercive fields by altering the magnetic anisotropy and exchange interaction. Owing to their unique magnetic properties, the recently reported two-dimensional magnets provide a new system for studying these features. For instance, a bilayer of chromium triiodide (CrI 3 ) behaves as a layered antiferromagnet with a magnetic field-driven metamagnetic transition. Here, we demonstrate electrostatic gate control of magnetism in CrI 3 bilayers, probed by magneto-optical Kerr effect (MOKE) microscopy. At fixed magnetic fields near the metamagnetic transition, we realize voltage-controlled switching between antiferromagnetic and ferromagnetic states. At zero magnetic field, we demonstrate a time-reversal pair of layered antiferromagnetic states that exhibit spin-layer locking, leading to a linear dependence of their MOKE signals on gate voltage with opposite slopes. Here, our results allow for the exploration of new magnetoelectric phenomena and van der Waals spintronics based on 2D materials.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Eigenvalue-Based Micromagnetic Analysis of Switching in Spin-Torque-Driven Structures

We present an eigenvalue-based approach for studying the magnetization dynamics in magnetic nanostructures driven by spintronic excitations, such as spin-transfer torque and spin-orbit torque. The approach represents the system dynamics in terms of normal oscillation modes (eigenstates) with corresponding complex eigenfrequencies. The dynamics is driven by a small number of active eigenstates and often considering just a single eigenstate is sufficient. We develop a perturbation theory that provides semianalytical dynamic solutions by using eigenstates for the case in the absence of damping and spintronic excitations as a basis. The approach provides useful insights into dynamics in such systems and allows solving several difficulties in their modeling, such as extracting the switching current in magnetic random-access memories and understanding switching mechanisms. We show that the presented approach directly predicts the critical switching current, i.e., switching current for an infinite time. The approach also provides solutions for the switching dynamics allowing the switching current to be obtained for a finite switching time, provided that the system symmetry is broken, e.g., by tilting the polarizer, so that switching by a finite pulse is possible.

42 ENGINEERING↗
DOE OSTI2021

Stimulated Nucleation of Skyrmions in a Centrosymmetric Magnet

Understanding the dynamics of skyrmion nucleation and manipulation is important for applications in spintronic devices. In this contribution, the spin textures at magnetic domain-boundaries stimulated by application of in-plane magnetic fields in a centrosymmetric kagome ferromagnet, Fe 3 Sn 2 , with thickness gradient are investigated using Lorentz transmission electron microscopy. Switching of the in-plane magnetic field is shown to induce a reversible transformation from magnetic stripes to skyrmions, or vice versa, at the interface between differently oriented domains. Micromagnetic simulations combined with experiments reveal that the rotatable anisotropy and thickness dependence of the response to the external in-plane field are the critical factors for the skyrmion formation. In addition, it is shown that the helicity of skyrmions can also be controlled using this dynamic process. Finally, the results suggest that magnetic materials with rotatable anisotropy are potential skyrmionic systems and provides a different approach for nucleation and manipulation of skyrmions in spintronic devices.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2014

Dynamic selective switching in antiferromagnetically-coupled bilayers close to the spin reorientation transition

We have designed a bilayer synthetic antiferromagnet where the order of layer reversal can be selected by varying the sweep rate of the applied magnetic field. The system is formed by two ultra-thin ferromagnetic layers with different proximities to the spin reorientation transition, coupled antiferromagnetically using Ruderman-Kittel-Kasuya-Yosida interactions. The different dynamic magnetic reversal behavior of both layers produces a crossover in their switching fields for field rates in the kOe/s range. This effect is due to the different effective anisotropy of both layers, added to an appropriate asymmetric antiferromagnetic coupling between them. Field-rate controlled selective switching of perpendicular magnetic anisotropy layers as shown here can be exploited in sensing and memory applications.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2019

Competing magnetic phases and itinerant magnetic frustration in SrCo 2 As 2

Whereas magnetic frustration is usually associated with local-moment magnets in special geometric arrangements, here we show that SrCo 2 As 2 is a candidate for frustrated itinerant magnetism. Using inelastic neutron scattering (INS), we determine that antiferromagnetic (AF) spin fluctuations develop in the square Co layers of SrCo 2 As 2 below T ≈ 100 K centered at the stripe-type AF propagation vector of ($\frac{1}{2}$, $\frac{1}{2}$), and that their development is concomitant with a suppression of the uniform magnetic susceptibility determined via magnetization measurements. We interpret this switch in spectral weight as signaling a temperature-induced crossover from an instability towards FM ordering to an instability towards stripe-type AF ordering on cooling, and show findings from Monte-Carlo simulations for a J 1 -J 2 Heisenberg model that illustrate how the crossover develops as a function of the frustration ratio –J 1 /(2J 2 ). By putting our INS data on an absolute scale, we quantitatively compare them and our magnetization data to exact-diagonalization calculations for the J 1 -J 2 model [N. Shannon et al., Eur. Phys. J. B 38, 599 (2004)], and show that the calculations predict a lower level of magnetic frustration than indicated by experiment. We trace this discrepancy to the large energy scale of the fluctuations (J avg ≳ 75 meV), which, in addition to the steep dispersion, is more characteristic of itinerant magnetism.

36 MATERIALS SCIENCE↗
DOE OSTI2019

Programmable Ultralight Magnets via Orientational Arrangement of Ferromagnetic Nanoparticles within Aerogel Hosts

The actuation and levitation of air-suspended objects by a magnetic field, due to its noncontact and holonomic manipulation modes, are important technological capabilities for device applications. However, owing to a higher density of conventional ferromagnets or nanoparticle-containing polymers and strong magnetic fields required for actuation, fabricating lightweight materials with a sensitive magnetic response for weight critical applications is challenging. Here, we report ultralight aerogel-based magnets (aero-magnets) comprising assembled ferromagnetic nanomaterials with highly magnetic anisotropy where the magnetic domains can be programmed by external predesigned fields. To demonstrate the breadth of manufacturing methods for this breed of aero-magnet composites, both silica/nanocellulose aerogel hosts and ferromagnetic nanorod/nanoplatelet guests have been explored. Single and double domains with out-of-plane magnetization are programmed into the aero-magnets and characterized by magnetic force microscopy. The levitation and actuation of the aero-magnets are realized while exposed to a small external magnetic field of 11 mT and introduced to a switching circuit. Furthermore, the elastic moduli of the aero-magnets are estimated by dynamic magnetic responses of the ferromagnetic nanoparticles tightly tethered in the aerogel hosts under rapid cyclic fields. These programmable aero-magnets could serve as monolithic magnetic actuator units in the fields of tiny robots and aerospace components.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2019

Multiferroicity in atomic van der Waals heterostructures

Materials that are simultaneously ferromagnetic and ferroelectric - multiferroics - promise the control of disparate ferroic orders, leading to technological advances in microwave magnetoelectric applications and next generation of spintronics. Single-phase multiferroics are challenged by the opposite d -orbital occupations imposed by the two ferroics, and heterogeneous nanocomposite multiferroics demand ingredients' structural compatibility with the resultant multiferroicity exclusively at inter-materials boundaries. Here we propose the two-dimensional heterostructure multiferroics by stacking up atomic layers of ferromagnetic Cr 2 Ge 2 Te 6 and ferroelectric In 2 Se 3 , thereby leading to all-atomic multiferroicity. Through first-principles density functional theory calculations, we find as In 2 Se 3 reverses its polarization, the magnetism of Cr 2 Ge 2 Te 6 is switched, and correspondingly In 2 Se 3 becomes a switchable magnetic semiconductor due to proximity effect. This unprecedented multiferroic duality (i.e., switchable ferromagnet and switchable magnetic semiconductor) enables both layers for logic applications. Van der Waals heterostructure multiferroics open the door for exploring the low-dimensional magnetoelectric physics and spintronic applications based on artificial superlattices.

36 MATERIALS SCIENCE↗
DOE OSTI2021

Transverse barrier formation by electrical triggering of a metal-to-insulator transition

Application of an electric stimulus to a material with a metal-insulator transition can trigger a large resistance change. Resistive switching from an insulating into a metallic phase, which typically occurs by the formation of a conducting filament parallel to the current flow, is a highly active research topic. Using the magneto-optical Kerr imaging, we found that the opposite type of resistive switching, from a metal into an insulator, occurs in a reciprocal characteristic spatial pattern: the formation of an insulating barrier perpendicular to the driving current. This barrier formation leads to an unusual N-type negative differential resistance in the current-voltage characteristics. We further demonstrate that electrically inducing a transverse barrier enables a unique approach to voltage-controlled magnetism. By triggering the metal-to-insulator resistive switching in a magnetic material, local on/off control of ferromagnetism is achieved using a global voltage bias applied to the whole device.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Engineering Magnetic Anisotropy and Emergent Multidirectional Soft Ferromagnetism in Ultrathin Freestanding LaMnO 3 Films

We report the combination of small coercive fields and weak magnetic anisotropy makes soft ferromagnetic films extremely useful for nanoscale devices that need to easily switch spin directions. However, soft ferromagnets are relatively rare, particularly in ultrathin films with thicknesses of a few nanometers or less. We have synthesized large-area, high-quality, ultrathin freestanding LaMnO 3 films on Si and found unexpected soft ferromagnetism along both the in-plane and out-of-plane directions when the film thickness was reduced to 4 nm. We argue that the vanishing magnetic anisotropy between the two directions is a consequence of two coexisting magnetic easy axes in different atomic layers of the LaMnO 3 film. Spectroscopy measurements reveal a change in Mn valence from 3+ in the film interior to approximately 2+ at the surfaces where considerable hydrogen infiltration occurs due to the water dissolving process. First-principles calculations show that protonation of LaMnO 3 decreases valence and Our the Mn switches the magnetic easy axis from in-plane to out-of-plane as the Mn valence approaches 2+ from its 3+ bulk value. Our work demonstrates that ultrathin freestanding films can exhibit functional properties that are absent in homogeneous materials, concomitant with their convenient compatibility with Si-based devices.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

A Low-Profile Gate Power Supply for a SiC Phase Leg with Reduced Isolation Capacitance

Gate driver power supply (GDPS) for SiC devices needs power to 5 W as the switching frequency increases to hundreds of kHz. Resonant converters with planar magnetics demand GDPS with a lower profile. Also, the isolation capacitance (Cp) needs to be minimized for SiC devices with high dv/dt. This paper proposed a planar 5 W*2, 20 V isolated gate power supply for a SiC phase leg in the EV traction inverter. Air-core magnetics with PCB windings are applied for low profile. A single-switch resonant Class-E topology is proposed with zero-voltage switching at 6.78 MHz to minimize the magnetics footprint for a 6 pF Cp. Compared with commercial power supplies with similar power, the proposed power supply reduced the profile and Cp by more than half without sacrificing its efficiency and power density.

Li, Bo↗
DOE OSTI2015

Magnetic field cycling effect on the non-linear current-voltage characteristics and magnetic field induced negative differential resistance in α-Fe{sub 1.64}Ga{sub 0.36}O{sub 3} oxide

We have studied current-voltage (I-V) characteristics of α-Fe{sub 1.64}Ga{sub 0.36}O{sub 3}, a typical canted ferromagnetic semiconductor. The sample showed a transformation of the I-V curves from linear to non-linear character with the increase of bias voltage. The I-V curves showed irreversible features with hysteresis loop and bi-stable electronic states for up and down modes of voltage sweep. We report positive magnetoresistance and magnetic field induced negative differential resistance as the first time observed phenomena in metal doped hematite system. The magnitudes of critical voltage at which I-V curve showed peak and corresponding peak current are affected by magnetic field cycling. The shift of the peak voltage with magnetic field showed a step-wise jump between two discrete voltage levels with least gap (ΔV{sub P}) 0.345(± 0.001) V. The magnetic spin dependent electronic charge transport in this new class of magnetic semiconductor opens a wide scope for tuning large electroresistance (∼500-700%), magnetoresistance (70-135 %) and charge-spin dependent conductivity under suitable control of electric and magnetic fields. The electric and magnetic field controlled charge-spin transport is interesting for applications of the magnetic materials in spintronics, e.g., magnetic sensor, memory devices and digital switching.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Laser-Induced Ultrafast Demagnetization and Spin Switching (Final Report)

The information technology revolution demands bigger and faster magnetic storage devices. The funded research focuses on a new frontier - Laser-induced ultrafast all-optical spin switching (AOS), where a single laser pulse can switch spins from one direction to another permanently, without a magnetic field, on a time scale of 1-10 picoseconds, 2-3 orders of magnitude faster than the existing technology. The funded research has successfully resolved a long-standing issue in ultrafast demagnetization whether the lattice contributes to the demagnetization. We developed a high level first-principles theory and employed a massively parallel computer to pin down the details of the physical mechanisms that are inaccessible to other methods. This unique feature allows us to compute the force on each atom in both bulk and monolayer systems. We find that it is indeed true there is a nonzero force on each atom, but the idea of vibration contribution is not crucial to our basic understanding of physics. This paves the way to future experimental, theoretical and technological developments.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2017

First-principles and model simulation of all-optical spin reversal

All-optical spin switching is a potential trailblazer for information storage and communication at an unprecedented fast rate free of magnetic fields. However, the current wisdom is largely based on semiempirical models of effective magnetic fields and heat pulses, so it is difficult to provide high-speed design protocols for actual devices. In this paper we carry out a massively parallel first-principles and model calculation for 13 spin systems and magnetic layers, free of any effective field, to establish a simpler and alternative paradigm of laser-induced ultrafast spin reversal and to point out a path to a full-integrated photospintronic device. It is the interplay of the optical selection rule and sublattice spin orderings that underlines seemingly irreconcilable helicity-dependent and -independent switchings. Using realistic experimental parameters, we predict that strong ferrimagnets, in particular, Laves phase C15 rare-earth alloys, meet the telecommunication energy requirement of 10 fJ, thus allowing a cost-effective subpicosecond laser to switch spin in the gigahertz region.

36 MATERIALS SCIENCE↗
DOE OSTI2019

First-principles Study of Strain-Induced Magnetism in Defective Arsenene

By using first-principles calculations, we explore the influences of tensile strain on the magnetic properties of a defective arsenene monolayer with mono-vacancy and di-vacancy. Calculation results show that unstrained defective arsenene monolayers both are intrinsically nonmagnetic. However, appropriate tensile strains can induce a ferromagnetic coupling in mono-vacancy- (8%) and di-vacancy-doped systems (7%), respectively. In addition, we also discussed the physical mechanism of strain-induced magnetism emergence and predicted a possibility of magnetism appearance in the experiment. Our study may provide insight for the design of memory-switching spintronic devices with metal-free magnetism by using arsenene.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2013

Plasma response to electron energy filter in large volume plasma device

An electron energy filter (EEF) is embedded in the Large Volume Plasma Device plasma for carrying out studies on excitation of plasma turbulence by a gradient in electron temperature (ETG) described in the paper of Mattoo et al. [S. K. Mattoo et al., Phys. Rev. Lett. 108, 255007 (2012)]. In this paper, we report results on the response of the plasma to the EEF. It is shown that inhomogeneity in the magnetic field of the EEF switches on several physical phenomena resulting in plasma regions with different characteristics, including a plasma region free from energetic electrons, suitable for the study of ETG turbulence. Specifically, we report that localized structures of plasma density, potential, electron temperature, and plasma turbulence are excited in the EEF plasma. It is shown that structures of electron temperature and potential are created due to energy dependence of the electron transport in the filter region. On the other hand, although structure of plasma density has origin in the particle transport but two distinct steps of the density structure emerge from dominance of collisionality in the source-EEF region and of the Bohm diffusion in the EEF-target region. It is argued and experimental evidence is provided for existence of drift like flute Rayleigh-Taylor in the EEF plasma.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗
DOE OSTI2014

Magnetization stability analysis of the Stoner-Wohlfarth model under a spin-polarized current with a tilted polarization

The stationary-state solutions of magnetization dynamics under a spin-polarized current that was polarized in an arbitrary direction were investigated by solving the Landau-Lifshitz-Gilbert-Slonczewski equation for a single-domain magnet. Taking into consideration the uniaxial magnetic anisotropy, the equilibrium directions of the magnetization vectors were analytically obtained by solving an algebraic cubic equation. It was found that one to three pairs of magnetization equilibrium states existed, depending on the current intensity and the direction of the spin polarization. By numerically analyzing the stabilities of these equilibrium states, the threshold switching current for the reversing the magnetic vector was obtained under different current polarization configurations, which may be useful for use in future spintronics devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2020

Correlation-driven eightfold magnetic anisotropy in a two-dimensional oxide monolayer

Engineering magnetic anisotropy in two-dimensional systems has enormous scientific and technological implications. The uniaxial anisotropy universally exhibited by two-dimensional magnets has only two stable spin directions, demanding 180° spin switching between states. We demonstrate a previously unobserved eightfold anisotropy in magnetic SrRuO 3 monolayers by inducing a spin reorientation in (SrRuO 3 ) 1 /(SrTiO 3 ) N superlattices, in which the magnetic easy axis of Ru spins is transformed from uniaxial $\langle 001 \rangle$ direction ( N < 3) to eightfold $\langle 111 \rangle$ directions ( N ≥ 3). This eightfold anisotropy enables 71° and 109° spin switching in SrRuO 3 monolayers, analogous to 71° and 109° polarization switching in ferroelectric BiFeO 3 . First-principle calculations reveal that increasing the SrTiO 3 layer thickness induces an emergent correlation-driven orbital ordering, tuning spin-orbit interactions and reorienting the SrRuO 3 monolayer easy axis. Our work demonstrates that correlation effects can be exploited to substantially change spin-orbit interactions, stabilizing unprecedented properties in two-dimensional magnets and opening rich opportunities for low-power, multistate device applications.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2021

Ion beam etching dependence of spin-orbit torque memory devices with switching current densities reduced by Hf interlayers

We report on the fabrication of nanoscale, three-terminal in-plane spin–orbit torque switching devices with low switching current densities. Critical parameters in the fabrication process, including the ion beam etching angle and time, were optimized to avoid fabrication defects and improve device yield. Measurements of the magnetic field and current-induced switching behavior of the tunnel junctions demonstrate a sensitivity to the nanopillar aspect ratio, which dictates the nanopillars’ anisotropy and thermal stability. Additionally, we show that the current density required for switching can be reduced and the device thermal stability increased by inserting Hf interlayers into the heterostructure. Micromagnetic simulations are generally consistent with the experimentally observed switching behavior, suggesting an increase in the interfacial perpendicular anisotropy at the CoFeB/MgO interface and the reduction in the Dzyaloshinskii–Moriya interaction at the W/CoFeB interface by the Hf interlayers.

36 MATERIALS SCIENCE↗