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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 559 records · Page 31
All sourcesNASA NTRSDOE OSTI
NASA NTRS1991

All a-axis oriented YBa2Cu3O(7-y) - PrBa2Cu3O(7-z) - YBa2Cu3O(7-y) Josephson devices operating at 80 K

The controllable, reproducible fabrication of nonhysteretic Josephson devices with excess-current weak-link characteristics at temperatures up to 80 K have been demonstrated. The devices are patterned from in situ deposited a-axis oriented YBa2Cu3O(7-y) - PrBa2Cu3O(7-y) - YBa2Cu3O(7-y) trilayers grown on SrTiO3(001) substrates. Control of the critical current density and resistance is achieved by varying the thickness of the PrBa2Cu3O(7-z) barrier layer. Critical current densities in excess of 10,000 A/sq cm have been reproducibly measured; good uniformity across the wafer is obtained with device parameters scaling with device area. Strong constant-voltage current steps are observed under 11.2 GHz microwave radiation at temperatures up to and above 80 K.

Barner, J. B.↗
NASA NTRS1973

Methods of Measurement for Semiconductor Materials, Process Control, and Devices

The development of methods of measurement for semiconductor materials, process control, and devices is reported. Significant accomplishments include: (1) Completion of an initial identification of the more important problems in process control for integrated circuit fabrication and assembly; (2) preparations for making silicon bulk resistivity wafer standards available to the industry; and (3) establishment of the relationship between carrier mobility and impurity density in silicon. Work is continuing on measurement of resistivity of semiconductor crystals; characterization of generation-recombination-trapping centers, including gold, in silicon; evaluation of wire bonds and die attachment; study of scanning electron microscopy for wafer inspection and test; measurement of thermal properties of semiconductor devices; determination of S-parameters and delay time in junction devices; and characterization of noise and conversion loss of microwave detector diodes.

Bullis, W. M.↗
NASA NTRS1995

A 32-bit Ultrafast Parallel Correlator using Resonant Tunneling Devices

An ultrafast 32-bit pipeline correlator has been implemented using resonant tunneling diodes (RTD) and hetero-junction bipolar transistors (HBT). The negative differential resistance (NDR) characteristics of RTD's is the basis of logic gates with the self-latching property that eliminates pipeline area and delay overheads which limit throughput in conventional technologies. The circuit topology also allows threshold logic functions such as minority/majority to be implemented in a compact manner resulting in reduction of the overall complexity and delay of arbitrary logic circuits. The parallel correlator is an essential component in code division multi-access (CDMA) transceivers used for the continuous calculation of correlation between an incoming data stream and a PN sequence. Simulation results show that a nano-pipelined correlator can provide and effective throughput of one 32-bit correlation every 100 picoseconds, using minimal hardware, with a power dissipation of 1.5 watts. RTD plus HBT based logic gates have been fabricated and the RTD plus HBT based correlator is compared with state of the art complementary metal oxide semiconductor (CMOS) implementations.

Kulkarni, Shriram↗
NASA NTRS2016

Ice Detection and Mitigation Device

A method for deicing an aerostructure includes driving a sensing current through a heater element coated to an aerostructure, the heater element having a resistance that is temperature dependent. A resistance of the heater element is monitored. It is determined whether there is icing at the heater element using the monitored resistance of the heater element. A melting current is driven through the heater element when it is determined that there is icing at the heater element.

Gambino, Richard J.↗
NASA NTRSDate not supplied

Developing Wear-Resistant Coatings for Lunar Dust Tolerant Applications

Materials resistant to the harsh lunar environment are needed to support long duration, sustainable missions on the Moon’s surface. Lunar dust poses a significant threat to the durability of components and vehicles due to its fine, jagged morphology and highly abrasive nature. These properties result in particles eroding, adhering and/or embedding onto component surfaces and into device confined geometries (e.g., gear housing, interlocking systems, etc.) potentially leading to premature failure. The aim of this work is to identify and characterize wear-resistant materials for use as protective coatings to minimize abrasion caused by lunar dust.Concurrently, testing and evaluation methods will be devised to elucidate and mimic aspects of lunar dust degradation, including particle embedding, gouging and erosion caused by high velocity impact events. Discussion on balancing the need for dust management and tolerance versus dust adhesion mitigation will be shared in context of relevant lunar applications within the NASA Lunar Occupancy Dust Surface Separation Technologies (LO-DuSST) effort, which is part of a NASA-wide effort to enable a sustained lunar presence through the Lunar Surface Innovation Initiative (LSII).

Materials, Coatings, lunar dust management/mitigat↗
NASA NTRSDate not supplied

Protective Coatings for Mitigating Lunar Dust Abrasion and Adhesion

Materials resistant to the harsh lunar environment are needed to support long duration, sustainable missions on the Moon’s surface. Lunar dust poses a significant threat to the durability of components and vehicles due to its fine, jagged morphology and highly abrasive nature. These characteristics result in particles eroding, adhering and/or embedding onto component surfaces and into device confined geometries (e.g., gear housing, interlocking systems, etc.) potentially leading to premature failure. The aim of this work is to identify and characterize wear-resistant materials, including advanced ceramics, for use as protective coatings to minimize abrasion and adhesion caused by lunar dust. Results from testing and evaluation methods devised to elucidate and mimic aspects of lunar dust degradation, including adhesion, abrasion and erosion, as well as the lunar environment, will be presented. Discussion on balancing the need for dust management and tolerance versus dust adhesion mitigation will be shared in context of relevant lunar applications within the NASA Lunar Occupancy Dust Surface Separation Technologies effort, which is part of a NASA-wide effort to enable a sustained lunar presence through the Lunar Surface Innovation Initiative.

lunar dust mitigation↗
NASA NTRS2011

Wireless Inductive Power Device Suppresses Blade Vibrations

Vibration in turbomachinery can cause blade failures and leads to the use of heavier, thicker blades that result in lower aerodynamic efficiency and increased noise. Metal and/or composite fatigue in the blades of jet engines has resulted in blade destruction and loss of lives. Techniques for suppressing low-frequency blade vibration, such as gtuned circuit resistive dissipation of vibratory energy, h or simply "passive damping," can require electronics incorporating coils of unwieldy dimensions and adding unwanted weight to the rotor. Other approaches, using vibration-dampening devices or damping material, could add undesirable weight to the blades or hub, making them less efficient. A wireless inductive power device (WIPD) was designed, fabricated, and developed for use in the NASA Glenn's "Dynamic Spin Rig" (DSR) facility. The DSR is used to simulate the functionality of turbomachinery. The relatively small and lightweight device [10 lb (approx.=4.5 kg)] replaces the existing venerable and bulky slip-ring. The goal is the eventual integration of this technology into actual turbomachinery such as jet engines or electric power generators, wherein the device will facilitate the suppression of potentially destructive vibrations in fan blades. This technology obviates slip rings, which require cooling and can prove unreliable or be problematic over time. The WIPD consists of two parts: a remote element, which is positioned on the rotor and provides up to 100 W of electrical power to thin, lightweight piezoelectric patches strategically placed on/in fan blades; and a stationary base unit that wirelessly communicates with the remote unit. The base unit supplies inductive power, and also acts as an input and output corridor for wireless measurement, and active control command to the remote unit. Efficient engine operation necessitates minimal disturbance to the gas flow across the turbine blades in any effort to moderate blade vibration. This innovation makes it possible to moderate vibration on or in turbomachinery blades by providing 100 W of wireless electrical power and actuation control to thin, lightweight vibration-suppressing piezoelectric patches (eight actuation and eight sensor patches in this prototype, for a total of 16 channels) positioned strategically on the surface of, or within, titanium fan blades, or embedded in composite fan blades. This approach moves significantly closer to the ultimate integration of "active" vibration suppression technology into jet engines and other turbomachinery devices such as turbine electrical generators used in the power industry. The novel feature of this device is in its utilization of wireless technology to simultaneously sense and actively control vibration in rotating or stationary turbomachinery blades using piezoelectric patches. In the past, wireless technology was used solely for sensing and diagnostics. This technology, however, will accomplish much more, in terms of simultaneously sensing, suppressing blade vibration, and making it possible for detailed study of vibration impact in turbomachinery blades.

Morrison, Carlos R.↗
NASA NTRS1990

In Situ deposition of YBCO high-T(sub c) superconducting thin films by MOCVD and PE-MOCVD

Metalorganic Chemical Vapor Deposition (MOCVD) offers the advantages of a high degree of compositional control, adaptability for large scale production, and the potential for low temperature fabrication. The capability of operating at high oxygen partial pressure is particularly suitable for in situ formation of high temperature superconducting (HTSC) films. Yttrium barium copper oxide (YBCO) thin films having a sharp zero-resistance transition with T( sub c) greater than 90 K and Jc approx. 10 to the 4th power A on YSZ have been prepared, in situ, at a substrate temperature of about 800 C. Moreover, the ability to form oxide films at low temperature is very desirable for device applications of HTSC materials. Such a process would permit the deposition of high quality HTSC films with a smooth surface on a variety of substrates. Highly c-axis oriented, dense, scratch resistant, superconducting YBCO thin films with mirror-like surfaces have been prepared, in situ, at a reduced substrate temperature as low as 570 C by a remote microwave-plasma enhanced metalorganic chemical vapor deposition (PE-MOCVD) process. Nitrous oxide was used as a reactant gas to generate active oxidizing species. This process, for the first time, allows the formation of YBCO thin films with the orthorhombic superconducting phase in the as-deposited state. The as-deposited films grown by PE-MOCVD show attainment of zero resistance at 72 K with a transition width of about 5 K. MOCVD was carried out in a commercial production scale reactor with the capability of uniform deposition over 100 sq cm per growth run. Preliminary results indicate that PE-MOCVD is a very attractive thin film deposition process for superconducting device technology.

Zhao, J.↗
NASA NTRS1978

Comparative radiation resistance calculation for graded- and constant-composition n Al/x/Ga/1-x/As-p Al/z/Ga/1-z/As solar cells

The performance and radiation resistance of a new double-graded-band-gap solar cell are theoretically determined. The performance of this device is similar to that of the single-graded-band-gap cell. The power-conversion efficiencies of both graded-band-gap structures are shown to be less sensitive to minority-carrier lifetime degradation than a similar constant-composition heteroface cell.

Hutchby, J. A.↗
NASA NTRS1986

Field Funneling and Range Straggling in Silicon Detectors

Magnitudes of field funneling and range straggling determined in silicon-surface-barrier (Schottky-barrier) charged-particle detectors (SSBD's) through meaurement of charges collected from alpha-particle tracks. Method used extended to straightforward measurement of charge collection from heavy-ion tracks in these and other semiconductor devices. Such measurements used to assess single-event upsets in integratedcircuit chips, with view toward making them resistant to radiation. Field funneling and range straggling measured with electronic system in which charge collected from individual ions measured and recorded by multichannel analyzer.

Zoutendyk, J. A.↗
NASA NTRS1991

Temperature coefficients and radiation induced DLTS spectra of MOCVD grown n(+)p InP solar cells

The effects of temperature and radiation on n(+)p InP solar cells and mesa diodes grown by metallorganic chemical vapor deposition (MOCVD) were studied. It was shown that MOCVD is capable of consistently producing good quality InP solar cells with Eff greater than 19 percent which display excellent radiation resistance due to minority carrier injection and thermal annealing. It was also shown that universal predictions of InP device performance based on measurements of a small group of test samples can be expected to be quite accurate, and that the degradation of an InP device due to any incident particle spectrum should be predictable from a measurement following a single low energy proton irradiation.

Walters, Robert J.↗
NASA NTRS1992

Leak Stopper For Metal-To-Metal Tube Fittings

Plastic-coated steel device is conformal and strong. Washerlike seal stops leakage at Dynatube(TM) joints between metal tubes. Made to resist corrosion, seal aligns itself in joint for maximum effectiveness.

Trevathan, Joseph R.↗
NASA NTRS1992

Anomalous capacitance of quantum well double-barrier diodes

The S-parameters of several different quantum well double barrier diodes have been measured. A technique has been developed for measuring whisker contacted diodes with an HP 8510B automatic network analyzer. Special coaxial mounts using K-connectors were designed to enable measurements up to 20 GHz. The voltage-dependent conductance and capacitance were derived from the measured reflection coefficient of each device. The C/V characteristics were observed to exhibit an anomalous increase at voltages corresponding to the negative differential resistance region (NDR). These are the first reported S-parameter measurements in the negative differential resistance region of quantum well double barrier diodes. A theory is presented that explains, in part, the observed results.

Boric, Olga↗
NASA NTRS2003

Integrated Microfluidic Gas Sensors for Water Monitoring

A silicon-based microhotplate tin oxide (SnO2) gas sensor integrated into a polymer-based microfluidic system for monitoring of contaminants in water systems is presented. This device is designed to sample a water source, control the sample vapor pressure within a microchannel using integrated resistive heaters, and direct the vapor past the integrated gas sensor for analysis. The sensor platform takes advantage of novel technology allowing direct integration of discrete silicon chips into a larger polymer microfluidic substrate, including seamless fluidic and electrical interconnects between the substrate and silicon chip.

Zhu, L.↗
NASA NTRS2011

Development of an Extreme High Temperature n-type Ohmic Contact to Silicon Carbide

We report on the initial demonstration of a tungsten-nickel (75:25 at. %) ohmic contact to silicon carbide (SiC) that performed for up to fifteen hours of heat treatment in argon at 1000 C. The transfer length method (TLM) test structure was used to evaluate the contacts. Samples showed consistent ohmic behavior with specific contact resistance values averaging 5 x 10-4 -cm2. The development of this contact metallization should allow silicon carbide devices to operate more reliably at the present maximum operating temperature of 600 C while potentially extending operations to 1000 C. Introduction Silicon Carbide (SiC) is widely recognized as one of the materials of choice for high temperature, harsh environment sensors and electronics due to its ability to survive and continue normal operation in such environments [1]. Sensors and electronics in SiC have been developed that are capable of operating at temperatures of 600 oC. However operating these devices at the upper reliability temperature threshold increases the potential for early degradation. Therefore, it is important to raise the reliability temperature ceiling higher, which would assure increased device reliability when operated at nominal temperature. There are also instances that require devices to operate and survive for prolonged periods of time above 600 oC [2, 3]. This is specifically needed in the area of hypersonic flight where robust sensors are needed to monitor vehicle performance at temperature greater than 1000 C, as well as for use in the thermomechanical characterization of high temperature materials (e.g. ceramic matrix composites). While SiC alone can withstand these temperatures, a major challenge is to develop reliable electrical contacts to the device itself in order to facilitate signal extraction

Evans, Laura J.↗
NASA NTRS1991

In-situ deposition of YBCO high-Tc superconducting thin films by MOCVD and PE-MOCVD

Metal-Organic Chemical Vapor Deposition (MOCVD) offers the advantages of a high degree of compositional control, adaptability for large scale production, and the potential for low temperature fabrication. The capability of operating at high oxygen partial pressure is particularly suitable for in situ formation of high temperature superconducting (HTSC) films. Yttrium barium copper oxide (YBCO) thin films having a sharp zero-resistance transition with T(sub c) greater than 90 K and J(sub c) of approximately 10(exp 4) A on YSZ have been prepared, in situ, at a substrate temperature of about 800 C. Moreover, the ability to form oxide films at low temperature is very desirable for device applications of HTSC materials. Such a process would permit the deposition of high quality HTSC films with a smooth surface on a variety of substrates. Highly c-axis oriented, dense, scratch resistant, superconducting YBCO thin films with mirror-like surfaces have been prepared, in situ, at a reduced substrate temperature as low as 570 C by a remote microwave-plasma enhanced metal-organic chemical vapor deposition (PE-MOCVD) process. Nitrous oxide was used as a reactant gas to generate active oxidizing species. This process, for the first time, allows the formation of YBCO thin films with the orthorhombic superconducting phase in the as-deposited state. The as-deposited films grown by PE-MOCVD show attainment of zero resistance at 72 K with a transition width of about 5 K. MOCVD was carried out in a commercial production scale reactor with the capability of uniform deposition over 100 sq cm per growth run. Preliminary results indicate that PE-MOCVD is a very attractive thin film deposition process for superconducting device technology.

Zhao, J.↗
NASA NTRS1997

Resistance exercise prevents plantar flexor deconditioning during bed rest

Because resistance exercise (REX) and unloading induce opposing neuromuscular adaptations, we tested the efficacy of REX against the effects of 14 d of bed rest unloading (BRU) on the plantar flexor muscle group. Sixteen men were randomly assigned to no exercise (NOE, N = 8) or REX (N = 8). REX performed 5 sets x 6-10 repetitions to failure of constant resistance concentric/eccentric plantar flexion every other day during BRU. One-repetition maximum (1RM) strength was tested on the training device. The angle-specific torque-velocity relationship across 5 velocities (0, 0.52, 1.05, 1.75, and 2.97 rad.s-1) and the full range-of-motion power-velocity relationship were assessed on a dynamometer. Torque-position analyses identified strength changes at shortened, neutral, and stretched muscle lengths. Concentric and eccentric contractile work were measured across ten repetitions at 1.05 rad.s-1. Maximal neural activation was measured by surface electromyography (EMG). 1RM decreased 9% in NOE and improved 11% in REX (P < 0.05). Concentric (0.52 and 1.05 rad.s-1), eccentric (0.52 and 2.97 rad.s-1), and isometric angle-specific torques decreased (P < 0.05) in NOE, averaging 18%, 17%, and 13%, respectively. Power dropped (P < 0.05) in NOE at three eccentric (21%) and two concentric (14%) velocities. REX protected angle-specific torque and average power at all velocities. Concentric and eccentric strength decreased at stretched (16%) and neutral (17%) muscle lengths (P < 0.05) in NOE while REX maintained or improved strength at all joint positions. Concentric (15%) and eccentric (11%) contractile work fell in NOE (P < 0.05) but not in REX. Maximal plantar flexor EMG did not change in either group. In summary, constant resistance concentric/eccentric REX completely prevented plantar flexor performance deconditioning induced by BRU. The reported benefits of REX should prove useful in prescribing exercise for astronauts in microgravity and for patients susceptible to functional decline during bed- or chair-bound hospital stays.

NASA Discipline Musculoskeletal↗
NASA NTRS2000

Proton Damage in Linear and Digital Optocouplers

Optocoupler failures occurred on the Topex-Poseidon spacecraft after about two years of operation. Later work in the laboratory showed that the failures were due to extreme sensitivity of LEDs within the optocouplers to displacement damage from protons. Although earlier work had been done on displacement damage in light-emitting diodes, none of the devices studied previously had been heavily damaged at the low radiation levels where the optocouplers failed in space. Subsequent work has shown that LED damage varies over an extremely wide range, depending on the particular manufacturing technology. This paper discusses proton degradation of linear and digital optocouplers. One obvious way to harden optocoupler technologies is to select LEDs that are more resistant to displacement damage. A direct comparison is made of degradation of a commercial linear optocoupler from one manufacturer with a modified version of the same device with a different LED technology. Other factors, including degradation of optical photoresponse and transistor -ain are also discussed, along with basic comparisons of digital and analog optocouplers. Linear optocouplers are designed with somewhat different requirements than digital optocouplers, which not only affects their radiation response but also the interpretation of radiation test data.

Johnston, A. H.↗