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At least 559 records · Page 31

Ab Initio Study of Magnetism in Nonmetal Adsorption on Arsenene Monolayer

The structural, electronic, and magnetic properties of adsorbed arsenene monolayer with a series of nonmetal atoms, including B, C, F, N, and O, are systematically investigated using first-principles calculations. Nonmagnetic behavior shows in the B-, F-, N-, and O-adsorbed systems. The magnetism has been observed in the case of C, which originated from the 2p electrons of C and its neighboring As 4p states. Meanwhile, these nonmagnetic elements can induce impurity channels around Fermi level, which reduce band gap of the systems. It implies that the B-, F-, N-, and O-adsorbed arsenene tune into narrow gap semiconductors without magnetic character. The X-adsorbed (X = B, C, F, N, and O) arsenene systems are promising candidates for spintronic devices in the future.

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Ab Initio Theoretical Prediction of Structural, Electronic, and Magnetic Properties in the 3d (Mn)-Doped Zinc-Blende MgSe: A DFT-mBJ Approach

In this paper, we have investigated the structural, electronic, and magnetic properties of magnesium selenium (MgSe) doped with transition metal manganese (Mn) impurity in the cubic diluted magnetic semiconductor (DMS) zinc blende structure. The compounds which we are interested are as Mg{sub 1−x}Mn{sub x}Se where x change between 0 and 1 by step 0.25. All properties are studied, using first-principles calculation of density functional theory under the framework of the full-potential linearized augmented plane waver (FP-LAPW). In our study, we employed the Wu-Cohen generalized approximation (WC-GGA) to optimize the crystal structure, whereas Tran-Blaha modified Becke-Johnson potential (TB-mBJ) as a new functional was applied to compute the electronic and magnetic properties in order to get some better degree of precision. The electronic band structures and density of state plots reveal ferromagnetic semiconducting behavior in these compounds, and the exchange constants N{sub 0}α and N{sub 0}β are calculated to validate the effects resulting from exchange splitting process. Moreover, for each concentration x, the value of total magnetic moment has been estimated to equal to 5 μ{sub B}. The important magnetic moments values obtained in these compounds indicate the potential for their use in spintronic devices.

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High-Pressure and Temperature Dependence of Electronic, Magnetic, Elastic, Thermodynamic, and Transport Properties of Full-Heusler Alloys Co{sub 2}YIn (Y = Nb, Zr)

Structural, elastic, magnetic, and electronic properties of Co{sub 2}YIn (Y = Nb, Zr) have been investigated by means of the full-potential linearized augmented plane wave along with generalized gradient approximation + U/modified Becke-Johnson method in the stable Fm-3m phase. The optimized equilibrium lattice parameter in stable phase is 6.1744 Å for Co{sub 2}NbIn and 6.2824 Å for Co{sub 2}ZrIn. We have calculated the spin-resolved density of states for both the alloys to show that the ferromagnetic behavior of Co{sub 2}NbIn is due to the exchange splitting of Co and Nb atoms and due to Co and Zr in Co{sub 2}ZrIn. In spin-up configuration, there is absence of energy gap while an energy gap can be seen in spin-down state for both the alloys exhibiting a half-metallic character. Through the elastic constants and their discussions, we have predicted the elastic behavior of the materials. The quasi-harmonic approximations have been employed to study the pressure- and temperature-dependent thermodynamic properties. The Boltzmann theory is employed to investigate the electronic transport properties of these alloys. The defined material properties may pay as a prime stand for the application of material in spintronics and thermoelectrics.

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Structural, Microstructural, Magnetic, and Ferroelectric Properties of Ba{sup 2+}-Doped BiFeO{sub 3} Nanocrystalline Multifferroic Material

Multiferroic barium-substituted nanocrystalline samples having the general formula Bi{sub 1−x}Ba{sub x}FeO{sub 3} (where x = 0.00, 0.05, 0.10, 0.15, 0.20, 0.25) were prepared by cost-effective sol–gel method using metal nitrates as oxidants. The prepared samples were annealed at 650 {sup ∘}C for 4 h using a muffle furnace. The influence of Ba{sup 2+} doping on the structural, microstructural, magnetic, and ferroelectric properties of bismuth ferrite (BFO) was studied systematically by standard techniques. All the samples were characterized by X-ray diffraction (XRD) technique, and the average crystallite size was calculated using Scherrer’s formula. The surface morphology of the prepared nanocrystalline samples was studied using field emission scanning electron microscopy (FE-SEM) technique. FTIR spectra were obtained to confirm the formation of the perovskite structures. The elemental compositional details obtained were confirmed by energy dispersive spectrum (EDS) analysis. Room temperature magnetic measurements were carried out up to a field of 15 kOe, and the parent sample (BFO) shows weak ferromagnetism. Further on, Ba{sup 2+} substitution in BFO shows an increase in magnetization. P–E loops were obtained to study the ferroelectric properties of all the samples. Obtained enhancement in magnetic and ferroelectric properties at room temperature is of great interest within the research community due to its wide range of applications in memory storage, spintronics, sensors, and multi-functional devices.

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Magnetism and Optical Property of Mn-Doped Monolayer CrSi{sub 2} by First-Principle Study

We investigate magnetism and optical properties of intrinsic and Mn-doped monolayer CrSi{sub 2} using the first-principle methods based on density functional theory. The results show that both monolayer CrSi{sub 2} sheets are metallic and ferromagnetic (FM) that hold promise in future 2D magnetic devices. In spite the slight reduction of the total magnetic moment of system after Mn doping in monolayer CrSi{sub 2}, the formation energies of ferromagnetic CrSi{sub 2} are also reduced. So, Mn doping in monolayer CrSi{sub 2} can have more promising applications in spintronics and magnetic storage. The optical properties of monolayer CrSi{sub 2}, including the absorption spectra, reflectivity, refractive index, loss function and dielectric function are also calculated. The intensity of reflectivity in far-infrared ranges is enhanced and real part n of refractive index decreases after Mn doping. The real part n of the refractive index is nearly constant (˜1) beyond 13 eV indicating that monolayer CrSi2 is vacuum like and fully transparent.

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Magnetic Behaviors of 3d Transition Metal-Doped Silicane: a First-Principle Study

We perform a first-principle computation on the magnetic properties of 3d transition metal (TM)-doped silicane. All the substituted systems are energetically stable. Robust half-metallic properties are found in Ti-, V- and Mn-substituted silicane. At the dopant concentration of 12.5%, we evaluate that the Curie temperature of Ti- and Mn-substituted silicane is at 340 and 666 K respectively in the mean-field approximation. Consequently, room-temperature ferromagnetism is easily achievable in Ti- and Mn-substituted silicane. Our work demonstrates potential application of Ti and Mn-substituted silicane for room-temperature spintronic devices.

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First-Principle Study on the Origin of Ferromagnetism in Non-magnetic Halide Perovskite CsCdM{sub 3} (M = Cl and Br) Doped with B, C, and N

Based on the density functional theory (DFT), we elucidate the origin of magnetization in non-magnetic cubic halide perovskite CsCdM{sub 3} (M = Cl and Br) induced by substitution of non-magnetic 2p-impurities (B, C, and N) substitution. The calculations were done within the generalized gradient approximation (GGA) and GGA plus-modified Becke and Johnson (mBJ-GGA) as the exchange correlation. The results reveal that half-metallic ferromagnetism can be obtained for C- and N-dopings with the integer magnetic moment of 3.00 and 2.00 µ{sub B} per cell. However, B substitution does not induce magnetism in both CsCdCl{sub 3} and CsCdBr{sub 3} systems. The localized magnetic moments substantially come from impurity atoms. The origin of ferromagnetism can be attributed to the p - p hybridization between 2p-impurities and its surrounding halide atoms. Our results show that doped perovskites could provide a new promising class of materials for future spintronics applications.

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Prediction of Half-Metallic Properties in Non-transition Metal-based Binary Compounds X Bi (X = Ba, Sr and Ca) with Zinc-Blende and Wurtzite Structures

In this study, structural, electronic and magnetic properties of non-transition metal-based binary compounds X Bi (X = Ba, Sr and Ca) in five different phases: rock salt, NiAs, wurtzite, zinc blende and CsCl, are investigated in order to find new sp magnetic materials used for real spintronic and other related applications. The calculations are performed by a developed full-potential augmented plane wave plus local orbitals (FP-L/APW + lo) method within the spin density functional theory. As exchange-correlation potential, we used the generalized gradient approximation of Perdew, Burke, and Ernzerhof (GGA-PBE) and the modified Becke-Johnson potential mBJ-GGA-PBE form. It is found that the magnetic moment in these compounds is mainly contributed by the spin-polarized p orbitals of Bi atoms. The WZ XBi are true half-metallic ferromagnet with opposite spin direction at Fermi energy having a magnetic moment of 2.00 μ B per formula unit.

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Electronic and Magnetic Investigations on Fe{sub 2}NiTe Alloy with High Curie Temperature

Full-potential local-orbital minimum-basis and spin-polarized relativistic Korringa-Kohn-Rostoker along with Monte Carlo simulations are applied to study the electronic and magnetic properties of Fe{sub 2}NiTe with Hg{sub 2}CuTi structure. The analysis of orbital population shows the electrons of 4s, 3d, 4d, and 4p from transition metal and 5s, 5d, and 5p from Te atom participating in bonding. It is demonstrated by the density of states of d-d and p-d hybridizations. Calculations show the magnetic moment is carried mainly by Fe atoms. Accordingly, the exchanges of Fe constituents play a leading role in interactions. By using the calculated Heisenberg exchange coupling parameters, the Curie temperature is estimated to be 761.38 K within mean-field approximation. In order to obtain more accurate value of the Curie temperature, Monte Carlo method is adopted to model the normalized magnetization as functions of the temperature, the obtained 507.93 K value is noticeably higher than the room temperature, which is favorable in realistic spintronics application. Finally, the magnetic moments, exchange interactions, and Curie temperatures in the range of 5.4 to 6.5 Å are calculated; the results implies the Curie temperatures are still above room temperature between given lattice intervals.

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Enhanced Magnetoresistance in In-Plane Monolayer MoS{sub 2} with CrO{sub 2} Electrodes

Magnetoresistance of monolayer MoS{sub 2} is reported to increase when used in in-plane configuration with CrO{sub 2} half-metal ferromagnet (HMF) electrodes. Density functional theory (DFT)- and non-equilibrium Green’s function (NEGF)-based simulations show that high magnetoresistance (MR) values of ∼860% can be achieved in in-plane monolayer MoS{sub 2} with CrO{sub 2} electrodes, which is much higher than the MR value of ∼300% for nine-layer and the MR value of ∼70% for single-layer out-of-plane MoS{sub 2} reported in Dolui et al., Phys. Rev. B 90(R), 041401 (2014) past by other researchers. High spin-injection efficiency ∼100% is also obtained at high bias voltages. High MR and perfect spin filtration suggests the importance of this configuration in spintronics applications.

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Study of Electronic Structure, Magnetism, and Half-Metallicity of New Heusler Compounds CsTmO{sub 2} (Tm = Fe, Co, Ni, and Cu)

The density functional calculations were performed using the full-potential linearized augmented plane wave (FPLAPW) method for new Heusler alloys CsTmO{sub 2} (Tm = Fe, Co, Ni, and Cu). All compounds were stable in FM AlCu{sub 2}Mn-type structure. Results revealed that these alloys can be experimentally synthesized according to the calculated cohesive and formation energies. CsTmO{sub 2} (Tm = Fe, Co, Ni, and Cu) alloys in AlCu{sub 2}Mn-type and CuHg{sub 2}Ti-type structures were half-metallic ferromagnets. The origin of half-metallicity in CsNiO{sub 2} alloy was also discussed. The total magnetic moment of CsTmO{sub 2} (Tm = Fe, Co, Ni, and Cu) alloys in both structures were 3 μ{sub B} per formula unit and obeyed the Slater-Pauling rule (M{sub tot} = 22 − Z{sub tot}). The relationship between the magnetism and half-metallicity of all compounds and the lattice constants was also studied. The half-metallic character in combined alloys CsTmO{sub 2} (Tm = Fe, Co, Ni, and Cu) improved in comparison with Heusler alloys including transition metals which indicated that they may be good candidates for practical applications in spintronics.

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Magnetic, Optoelectronic, and Thermodynamic Properties of Sr{sub 2}CrXO{sub 6} (X = La and Y): Half-Metallic and Ferromagnetic Behavior

The effects of spin polarization on the structure, magnetic, and optoelectronic properties of Cr-based series of double perovskites Sr{sub 2}CrXO{sub 6} (X = La and Y) have been studied by using the full-potential linearized augmented plane-wave method (FP-LAPW), based on the density functional theory (DFT) as implemented in the Wien2k code, within the generalized gradient approximation (GGA), GGA + U, and GGA plus Trans-Blaha-modified Becke–Johnson (TB-mBJ) as the exchange correlation. Our results show a similar half-metallic ferromagnetic ground state for both materials. From the electronic properties, it is found that Sr{sub 2}CrYO{sub 6} has a direct band gap at (Γ-Γ) direction and Sr{sub 2}CrLaO{sub 6} has an indirect band gap at (Γ-W) direction. Furthermore, we have computed the optic and thermodynamic properties which are investigated for the first time. Consequently, the magnetic, optoelectronic, and thermodynamic properties show these compounds are promising for high technological applications, namely spintronic materials.

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Magneto-electronic and Thermodynamic Properties of Quaternary NiFeMnZ (Z = In, Sn) New Spin Gapless Semiconductors

This paper deals with investigation of magneto-electronic and thermodynamic properties of new spin gapless semiconductor quaternary NiFeMnZ (Z = In, Sn) Heusler alloys. In addition, electronic properties such as band structure and density of states were studied in detail. The obtained results are based on first-principles calculations, using the full potential linearized augmented plane wave (FP-LAPW) method within well-known generalized gradient approximation (GGA) coupling with spin-orbit calculation (SOC) in framework of the density functional theory (DFT) implemented in the WIEN2k package. As results, the alloys were found to be new spin gapless semiconductors (SGSs), and both compounds in LiMgPdSn-type crystal structure are stable. The magnetic moment of NiFeMnIn and NiFeMnSn was 4.39 and 4.99 μ{sub B} per formula unit, respectively. This result is in agreement with the Slater-Pauling rule (M{sub tot} = 24 −Z{sub tot}). Furthermore, the thermodynamic properties were also predicted. All these multifunctionalities lead to crucial interest for developing future spintronics device generations.

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Ferromagnetism in (X, Y)-Codoped 4H-GaN Polytype X = Na and Mg, Y = Na and Mg: Ab Initio Study

In this work, the magnetic behavior of 4H-GaN polytype codoped with (X = Na and Mg, Y = Na and Mg) is studied by means of first-principle calculations based on spin-density functional theory within the generalized-gradient approximation. It is found that the most stable configuration reveals the smallest cohesion energy and the X–Y bond length is minimal. (X, Y )-codoped 4H-GaN reveals magnetism behavior, and the total magnetic moment comes mainly from the N host atoms. Interestingly, (Na, Na)-codoped 4H-GaN is found to be half-metallic ferromagnetic with a magnetic moment of 4 μ{sub B}. Results show also that (Mg, Na)- and (Na, Mg)-codoped 4H-GaN are found to be nearly half-metallic ferromagnetic with a magnetic moment of 2.96 and 2.97 μ{sub B}, respectively. Whereas (Mg, Mg)-codoped 4H-GaN have a metallic ferromagnetic behavior with a magnetic moment of 1.87 μ{sub B}. The partial density of states denotes that magnetism is achieved through a p-p-like coupling between the impurity X-2p states of X atom, Y-2p states of Y atom, and N-2p states of N host atoms. These theoretical results make Na–Na-codoped 4H-GaN very promising materials for spintronic technology.

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Resistance Anomalies at Superconducting Transition in Multilayer N/S/F/S/N Heterostructures

We have prepared lateral N/S/F/S/N heterostructures from perovskite bilayer YBa{sub 2}Cu{sub 3}O{sub 7−x} (YBCO (70 nm), as superconductor S) and La{sub 1−x}Sr{sub x}MnO{sub 3} (LSMO (30 nm), as ferromagnet F) covered ex situ by Au layer (normal metal N, 50 nm) and Ti layer (50 nm). Whereas the Ti layer serves as a mask at Ar{sup +} ion beam etching, the gold layer protects the properties of bilayer LSMO/YBCO during the fabrication process mainly during Ga{sup +} focused ion beam etching. In many cases, the resistance vs. temperature (R(T)) dependences of the heterostructures exhibited some peculiarities (resistance peaks and dips) at superconducting transition. To explain these anomalies, we used transport effects emerging between resistances of individual layers and resistances of their interfaces. Our simulations fit very well the experimental R(T) dependences of N/S/F/S/N heterostructures and show that transport effects can play an important role in multilayer structures which can be used in spintronics.

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Ab Initio Investigation of Structural, Electronic, and Magnetic Properties of Cr-Doped ZnS and ZnSe in Wurtzite Structure

Using the first-principles calculations with the full potential linear muffin–tin orbital (FP-LMTO) method, we investigated the structural, electronic, and magnetic properties of Zn{sub 1−x}Cr{sub x}(S,Se)-diluted magnetic semiconductors (DMSs) in wurtzite structures with varying concentrations (x = 0.0625, x = 0.125, and x = 0.25) of Cr. The electronic properties indicated that Zn{sub 1−x}Cr{sub x}(S,Se), in all concentrations, exhibited half-metallic ferromagnetic (HMF) behavior with spin polarization of 100%. The density of states showed a hybridization between the p(S, Se) and 3d(Cr) states, which created an antibonding state in the gap that stabilized the ferromagnetic ground state linked to the double-exchange mechanism. Therefore, these compounds are highly likely candidates for spintronic applications.

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Electronic Structure, Elastic, Magnetic, and Optical Properties of Fe{sub 2}MnZ (Z = Si, Ge, and Sn) Full Heusler Alloys: First-Principle Calculations

Investigations of the electronic structure, elastic, magnetic, and optical properties of Fe{sub 2}MnZ (Z = Si, Ge, and Sn) full Heusler alloys show mechanical stability with cubic symmetry in all three alloys. They are elastically anisotropic and Fe{sub 2}MnSi is ductile whereas Fe{sub 2}MnGe and Fe{sub 2}MnSn are brittle in nature. The value of total magnetic moment is 3 μ{sub B} for Fe{sub 2}MnSi and Fe{sub 2}MnGe at their equilibrium lattice constants and follows the Slater–Pauling curve. Fe{sub 2}MnSn possess the largest magnetic moment among the three with a value of 5.73 μ{sub B} at equilibrium lattice constant. Fe{sub 2}MnSi shows half-metallic nature with 100% spin polarization for a wide range of lattice parameters and is useful for spintronics devices. Good optical properties over wide photon energies point to the possible use of these alloys as radiation shielding materials, optical filters, and photo-electronic devices.

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Half-Metallic and Half-Semiconductor Gaps in Cr-Based Chalcogenides: DFT + U Calculations

Using full-potential linear-augmented plane waves plus local orbitals (FP-LAPW) method, within the generalized gradient approximation (GGA) and GGA + U (Hubbard Coulomb onsite correction) as well as the modified Becke-Johnson approach (mBJ-GGA and mBJ-GGA + U), we have carried out a systematic investigation of the structural, electronic, and magnetic properties of CrS, CrSe, and CrTe compounds in two competing phases: the zinc-blende (ZB) and wurtzite (WZ) structures. We obtained half-metallic (HM) gaps of 1.35 (2.32), 1.65 (2.49), and 1.52 (1.80) for the CrS, CrSe, and CrTe compounds, respectively, in the ZB phase within the GGA + U (mBJ-GGA + U) approach. The HM gaps are 1.78, 2.11, and 1.53 for CrS, CrSe, and CrTe compounds, respectively, in the WZ phase using the GGA + U. Notably, the CrSe and CrTe using the mBJ-GGA + U approach are a half-semiconductor (HSC) in the WZ phase. The HSC gaps are 0.94 and 0.25 eV for CrSe and CrTe compounds, respectively, while CrS has a HM gap of 2.30 eV. We observed a HSC-to-HM transition for the CrSe and CrTe crystal structures on application of strain. The CrS, CrSe, and CrTe compounds have a total magnetic moment of 4.0 µ{sub B} per formula unit with the magnetization predominantly from the Cr ion. The main features observed from the density of states and strain evolution should motivate further experimental exploration on the possible application of the CrS, CrSe, and CrTe compounds for spintronic applications.

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