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At least 559 records · Page 31

Hierarchical morphologies in co-sputter deposited thin films

Co-depositions of immiscible alloy films at specific processing conditions have yielded hierarchical microstructures which consist of distinct features at multiple length scales, often agglomerates and concentration modulations on the sub-micrometer-scale and fine nanoprecipitates in a matrix on the nanoscale. The present work examined a series of immiscible alloy systems: Cu-Mo, Cu-Ag, Cu-Fe, Cu-Ta, Mo-Ag, Cu-Mo-Ag, to determine the kinetic conditions favorable for hierarchical organization and the formation mechanism of such structures. Thin films of six immiscible systems were sputter co-deposited over a range of deposition rates from 0.12 to 2 nm/s and various temperatures from 400 to 800°C. The resulting microstructures indicate that hierarchical structures form with sufficient disparity in kinetic energy between the constituent atoms, one species being highly mobile (A) and the other relatively immobile (B). This condition arises typically at elevated deposition temperatures and reduced deposition rates but is also alloy dependent. The hierarchical structures form during deposition via phase separation and self-organization processes across the multiple length scales. The adatoms diffuse on the film surface with the highly mobile species swiftly agglomerating into A-rich domains within which B-rich nanoprecipitates form, often self-organizing into periodic arrays. The smallest B-rich nanoprecipitates in the A-rich domains are found to be coherent and in a metastable crystal structure (B taking the structure of A), but coarser precipitates that exhibit the equilibrium structure of B element. The A-rich domains are surrounded by a B-rich matrix that phase-separates into a concentration modulated structure. In conclusion, the observations are interpreted via a model incorporating material properties and process parameters.

36 MATERIALS SCIENCE↗

Structure-property relationships and mobility optimization in sputtered La-doped BaSn O 3 films: Toward 100cm 2 V -1 s -1

he wide band gap semiconducting perovskite BaSnO 3 is of high current interest due to outstanding room temperature mobility at high electron density, fueled by potential applications in oxide, transparent, and power electronics. Due in part to a lack of lattice-matched substrates, BaSnO 3 thin films suffer from high defect densities, however, limiting electron mobility. Additionally, the vast majority of BaSnO 3 thin film research has focused on pulsed laser deposition or molecular beam epitaxy. In this work, we present an exhaustive optimization of the mobility of Ba 0.98 La 0.02 SnO 3 films grown by a scalable, high-throughput method: high-pressure-oxygen sputter deposition. Considering target synthesis conditions, substrate selection, buffer layer structure, deposition temperature, deposition rate, thickness, and postdeposition annealing conditions, and by combining high-resolution x-ray diffraction, reciprocal space mapping, rocking curve analysis, scanning transmission electron microscopy, atomic force microscopy, and temperature-dependent electronic transport measurements, detailed understanding of synthesis-structure-property relationships is attained. Optimized room temperature mobility of 96 cm 2 V –1 s –1 is achieved in vacuum-annealed GdScO 3 (110)/BaSnO 3 (120 nm)/Ba 0.98 La 0.02 SnO 3 (200 nm) heterostructures, as well as 92 cm 2 V –1 s –1 on unbuffered substrates and 87 2 V –1 s –1 without postdeposition annealing. These results, including important trends in defect densities and a surprising dependence of mobility on lattice mismatch, substantially expand the understanding of the interplay between deposition conditions, microstructure, and transport in doped BaSnO 3 films, establishing competitive mobilities in films fabricated via a scalable, high-throughput, industry-standard technique.

36 MATERIALS SCIENCE↗

Reaction of turbulence at the edge and in the center of the plasma column to pulsed impurity injection caused by the sputtering of the wall coating in L-2M stellarator

Impurity injection into plasma caused by the sputtering of the wall coating in the L-2M stellarator during auxiliary electron cyclotron resonance heating leads to a change in the level of plasma density fluctuations with frequencies above 0.25 MHz: suppression of long-wavelength (k{sub ⊥} = 2 cm{sup –1}) density fluctuations in the edge plasma, intensification of short-wavelength (k{sub ⊥} = 30 cm{sup –1}) and long-wavelength (k{sub ⊥} = 1 cm{sup –1}) fluctuations at the midradius of the plasma column, and intensification of short-wavelength fluctuations (k{sub ⊥} = 20 cm{sup –1}) in the plasma center (including the gyroresonance region). At the same time, the level of fluctuations with frequencies below 0.25 MHz remains unchanged. In the edge plasma, a decrease in the plasma potential and suppression of its fluctuations is observed during impurity injection, which also causes an increase in MHD activity.

70 PLASMA PHYSICS AND FUSION TECHNOLOGY↗

Manufacturing of Sputtering Composite Targets Containing Phases of Co{sub 2}FeSi or Co{sub 2}MnSi Heusler Alloy

The paper presents a method for manufacturing mechanically strong sputtering composite targets containing the phase of the Co{sub 2}FeSi or Co{sub 2}MnSi Heusler alloy of the stoichiometric composition, which can be used for fabrication of spin electronic devices by high-frequency magnetron deposition and pulsed laser deposition of thin films.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

MAGNETRON SPUTTERING OF Nb3Sn FOR SRF CAVITIES

Nb3Sn is a potential candidate for surface material of SRF cavities since it can enable the cavity to operate at higher temperatures with high quality factor and at an increased accelerating gradient. Nb-Sn films were deposited using magnetron sputtering of individual Nb and Sn targets onto Nb and sapphire substrates. The as-deposited films were annealed at 1200 °C for 3 hours. The films were characterized for their structure by X-ray Diffraction (XRD), morphology by Field Emission Scanning Electron Microscopy (FESEM), and composition by Energy Dispersive X-ray Spectroscopy (EDS) and Time of Flight Secondary Ion Mass Spectrometry (ToF-SIMS). The surface resistivity was measured down to cryogenic temperature to determine the superconducting transition temperature and its width. The composition of the multilayered films was controlled by varying the thickness of the Nb and Sn layers. The films showed crystalline Nb3Sn phases with Tc up to 17.6 K.

Eremeev, G.↗

Sputter deposition of Ta 1 W 1 Au 1 Bi 7 films for next generation hohlraums

Hohlraum simulation predicts a higher x-ray drive from Ta 1 W 1 Au 1 Bi 7 compared with our current Au hohlraum. Here, we study the effect of deposition process parameters including deposition rate, working pressure, target-to-substrate distance, substrate bias, and substrate temperature on the microstructure of Ta1W1Au1Bi7 films deposited by direct current magnetron sputtering onto planar substrates. We found that the substrate temperature has a pronounced effect on the film microstructure. This is attributed to the Bi low melting point (271°C) causing its adatom mobility to be strongly dependent on the substrate temperature. Additionally, we observed phase separation for films deposited with a high substrate bias. These results have important implications for the development of a robust Ta 1 W 1 Au 1 Bi 7 hohlraum fabrication process.

36 MATERIALS SCIENCE↗

Controlled Growth of Ta Oxide With Reactive Sputtering for Overlap Josephson Junction Application

Josephson junctions $\($JJs$\)$ are indispensable elements for superconducting quantum electronics. There is a growing need to develop processes for high quality JJs. Here we explore the growth of Ta oxide as a dielectric barrier for Metal-Oxide-Metal overlap JJ implementations. We study films of Ta oxides prepared with reactive magnetron sputtering. TaOx is grown on silicon and Ta films with varying RF power and oxygen concentrations. Tuning these parameters allows us to control the rate of deposition as well as composition of polycrystalline Ta oxides needed to meet our dielectric requirements for Josephson Junctions.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

Optimization of boron carbide density using direct current sintering for use as sputtering sources at the National Ignition Facility

Several experimental trials were conducted to determine optimal sintering parameters and compositions for purchased boron carbide powder using spark plasma sintering/direct current sintering. Sputtering targets used to create ablators for the National Ignition Facility have been unable to survive post processing procedures suggesting that in-house fabrication may yield better results due to extended control.

36 MATERIALS SCIENCE↗

Thermoelectric Properties and Morphology of Si/SiC Thin-Film Multilayers Grown by Ion Beam Sputtering

Multilayers (MLs) of 31 bi-layers and a 10-nm layer thickness each of Si/SiC were deposited on silicon, quartz and mullite substrates using a high-speed, ion-beam sputter deposition process. The samples deposited on the silicon substrates were used for imaging purposes and structural verification as they did not allow for accurate electrical measurement of the material. The Seebeck coefficient and the electrical resistivity on the mullite and the quartz substrates were reported as a function of temperature and used to compare the film performance. The thermal conductivity measurement was performed for ML samples grown on Si, and an average value of the thermal conductivity was used to find the figure of merit, zT, for all samples tested. X-ray diffraction (XRD) spectra showed an amorphous nature of the thin films. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) were used to study the film morphology and verify the nature of the crystallinity. The mobility of the multilayer films was measured to be only 0.039 to 1.0 cm 2 /Vs at room temperature. The samples were tested three times in the temperature range of 300 K to 900 K to document the changes in the films with temperature cycling. The highest Seebeck coefficient is measured for a Si/SiC multilayer system on quartz and mullite substrates and were observed at 870 K to be roughly -2600 μV/K due to a strain-induced redistribution of the states’ effect. The highest figure of merit, zT, calculated for the multilayers in this study was 0.08 at 870 K.

36 MATERIALS SCIENCE↗

High Strength and Deformation Mechanisms of A l0.3 CoCrFeNi High-Entropy Alloy Thin Films Fabricated by Magnetron Sputtering

Recently, high-entropy alloy thin films (HEATFs) with nanocrystalline structures and high hardness were developed by magnetron sputtering technique and have exciting potential to make small structure devices and precision instruments with sizes ranging from nanometers to micrometers. However, the strength and deformation mechanisms are still unclear. In this work, nanocrystalline Al0.3CoCrFeNi HEATFs with a thickness of ~4 μm were prepared. The microstructures of the thin films were comprehensively characterized, and the mechanical properties were systematically studied. It was found that the thin film was smooth, with a roughness of less than 5 nm. The chemical composition of the high entropy alloy thin film was homogeneous with a main single face-centered cubic (FCC) structure. Furthermore, it was observed that the hardness and the yield strength of the high-entropy alloy thin film was about three times that of the bulk samples, and the plastic deformation was inhomogeneous. Our results could provide an in-depth understanding of the mechanics and deformation mechanism for future design of nanocrystalline HEATFs with desired properties.

36 MATERIALS SCIENCE↗

Heterogeneous Morphologies and Hardness of Co-Sputtered Thin Films of Concentrated Cu-Mo-W Alloys

Heterogeneous microstructures in Cu-Mo-W alloy thin films formed by magnetron co-sputtering immiscible elements with concentrated compositions are characterized using scanning transmission electron microscopy (STEM) and nanoindentation. In this work, we modified the phase separated structure of a Cu-Mo immiscible system by adding W, which impedes surface diffusion during film growth. The heterogeneous microstructures in the Cu-Mo-W ternary system exhibited bicontinuous matrices and agglomerates composed of Mo(W)-rich phase. This is unique, as these are the slower-diffusing species, contrasting past reports of binary Cu-Mo thin films that exhibited Cu-rich agglomerates. The bicontinuous matrices comprised of Cu-rich and Mo(W)-rich phases exhibited bilayer thicknesses of less than 5 nm. The hardness of these thin films measured using nanoindentation is reported and compared to similar multilayers and nanocomposites in binary systems.

36 MATERIALS SCIENCE↗

Improved carbon electrode reduces arc sputtering

Carbon rod cores with a smaller proportion of rare earth compounds than in standard cores reduce arc sputtering in optical equipment. This core is produced without additional cost or equipment.

Source record↗