SEARCH · Search NASA

Results for “capacitance”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

SourceResearch connectionFrom yearThrough year

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 559 records · Page 31

All sources NASA NTRS DOE OSTI

DOE OSTI2026

Electrochemical Modeling of PID Leakage Current of PV Modules: Steady-State Current, Transient Current, and RC-Equivalent Circuit

Potential-induced degradation (PID) remains a significant reliability concern for photovoltaic (PV) modules, arising when a voltage difference between the module frame and the solar cells drives unintended leakage current through the glass-encapsulant stack. Although PID ultimately manifests as PID-s, PID-p, or PID-c, the underlying behavior of the leakage current-its magnitude and time dependence-requires clearer electrochemical interpretation. Traditional explanations attribute the initial transient current to bulk capacitive elements of the glass, encapsulant, and antireflection coatings, and the steady-state current according to their effective ohmic resistance. More recent studies, however, indicate that electrochemical charge-transfer processes at the encapsulant-metallization interface can play a dominant role in defining the leakage-current path. This paper develops a unified electrochemical framework for modeling PID leakage current. First, an RC-equivalent circuit is formulated by combining conventional RC elements with a Randles-type interface to capture transient leakage current through double-layer capacitance and faradaic processes at ionic-electronic boundaries. Second, the steady-state current-voltage behavior is explained using a linearized Butler-Volmer relationship, showing that the measured ohmic response corresponds to the low-overpotential limit of charge-transfer kinetics. Analytical results demonstrate that, for typical module materials-3.2-mm soda-lime glass and 0.45-mm encapsulant-the dominant modulators to PID leakage current are the glass surface resistance (under dry-surface conditions), the glass bulk capacitance, and the encapsulant resistance (under wet-surface conditions), with soda lime glass surface and EVA/POE encapsulant resistances primarily governing steady-state current. The proposed electrochemical model is validated against measured leakage-current data, showing good agreement in both the magnitude and the time-dependent evolution of PID leakage current.

14 SOLAR ENERGY↗

DOE OSTI2024

Two-Stage Cryogenic HEMT-Based Amplifier for Low-Temperature Detectors

To search for dark matter candidates with masses below $\mathcal{O}$ (MeV), the SPLENDOR (Search for Particles of Light dark mattEr with Narrow-gap semiconDuctORs) experiment is developing novel narrow-bandgap semiconductors with electronic bandgaps on the order of 1–100 meV. In order to detect the charge signal produced by scattering or absorption events, SPLENDOR has designed a two-stage cryogenic HEMT-based amplifier with an estimated charge resolution approaching the single-electron level. A low-capacitance (~ 1.6 pF) HEMT is used as a buffer stage at T = 10 mK to mitigate effects of stray capacitance at the input. The buffered signal is then amplified by a higher-capacitance (~ 200 pF) HEMT amplifier stage at T = 4 K. Importantly, the design of this amplifier makes it usable with any insulating material—allowing for rapid prototyping of a variety of novel detector materials. Here, we present the two-stage cryogenic amplifier design, preliminary voltage noise performance, and estimated charge resolution of 7.2 electrons.

47 OTHER INSTRUMENTATION↗

DOE OSTI2020

Synthesis of nickel selenide thin films for high performance all-solid-state asymmetric supercapacitors

As a significant semiconductor, nickel selenide shows enormous potential and extensive application prospects in the field of sensor, photocatalysis and supercapacitor. In this paper, nickel selenide (Ni 3 Se 2 , NiSe) thin films were successfully fabricated on stainless-steel sheet using a facile, effective electrodeposition technique. The morphologies, microstructures and chemical compositions of the thin films are characterized systematically. Electrochemical tests exhibit that the Ni3Se2 and NiSe possess high specific capacitance of 581.1 F/g and 1644.7 F/g, respectively. A flexible, all-solid-state asymmetric supercapacitor is assembled by utilizing NiSe film as positive electrode and activated carbon as negative electrode. The solid device delivers a high areal capacitance of 27.0 mF/cm 2 at the current density of 0.7 mA/cm 2 . Furthermore, the maximum volumetric energy density and power density of the NiSe//AC asymmetric SCs can achieve 0.26 mWh/cm 3 and 33.35 mW/cm 3 , respectively. The device shows robust cycling stability with 84.6% capacitance retention after 10000 cycles, outstanding flexibility and satisfactory mechanical stability. Moreover, two devices in series can light up a red light-emitting diode, which displayed great potential applications for energy storage.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2024

Upcycling linear low-density polyethylene waste to turbostratic graphene for high mass loading supercapacitors

Linear low-density polyethylene (LLDPE) waste is difficult to upcycle into more valuable carbon materials because it tends to completely decompose into small molecules during thermal processing. In this work, LLDPE is upcycled into a high quality turbostratic graphene using a pre-treatment step to oxidatively crosslink the polymer with the assistance of solid additives (KCl and K 2 CO 3 ) that improve crosslinking by increasing the effective surface area of the polymer melt during processing. After this pretreatment step, the crosslinked polymer could then be carbonized and catalytically graphenized between 400–950°C without decomposition of the polymer feedstock. The LLDPE derived graphene (LLDPE-G) obtained from this process has a Brunauer–Emmett–Teller (BET) specific surface area, up to 1800m 2 g -1 and average Raman I D /I G and I 2D /I G ratios of 0.85 and 0.57, respectively, indicating high quality graphene. When used as an electrode material in symmetric supercapacitors, LLDPE-G possesses a specific capacitance up to 175Fg -1 at a mass loading of 20mgcm -2 , which is two times the commercial requirement, yielding an areal capacitance of 3.5 Fcm -2 . Moreover, LLDPE-G exhibits exceptional cycling stability with a capacitance retention of 95.8 % after 100,000 cycles at a current density of 4.0 Ag -1 . Additionally, the KCl and K 2 CO 3 solids are recycled and reused over 3 complete reaction cycles to make new LLDPE-G with the material quality and electrocapacitive performance retained and verified after each cycle. Our approach creates new opportunities for upcycling waste LLDPE and other varieties of polyethylene into a higher value graphene used for electrochemical energy storage applications.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2019

Electroanalytical Investigation of the Electrode–Electrolyte Interface of Quaternary Ammonium Ionic Liquids: Impact of Alkyl Chain Length and Ether Functionality

The influence of ionic associations and potential-dependent interactions on the electrode–electrolyte interfacial structure of ionic liquids (ILs) is studied by electrochemical impedance spectroscopy (EIS) and surface-enhanced Raman spectroscopy (SERS) for a variety of asymmetric quaternary ammonium ILs. Specifically, the impact of cation alkyl chain length (C = 4, 8 and 16) and ether functionality on the interfacial structuring of ILs at the glassy carbon electrode surface is examined. Ammonium cations with alkyl chain length of 8 and 16 carbons are found to stabilize the formation of the bis(trifluorosulfonyl)imide, [TFSI], anion dense Stern layer at positive electrode potentials leading to larger capacitances. The longer alkyl chain of the cation is believed to screen the ion–ion repulsion among the anions by intruding into the interfacial anion layer. SERS suggests the presence of carbon-containing rings at the interface at both positive and negative electrode potentials, which can be explained by the buckling of the long alkyl chains. Inclusion of an ether functionality allowed for more symmetry in the camel-shaped potential-dependent differential capacitance curves, suggesting similar excess ion density at both positive and negative potentials. This work contributes to understanding and predicting the interfacial electrode capacitance in ILs by understanding the balance of ionic interactions and the associated repulsions at electrode–electrolyte interfaces that are pertinent to electrochemical energy storage, electrocatalysis, and electrochemical sensors.

25 ENERGY STORAGE↗

DOE OSTI2024

Alumina–Titania Nanolaminate Condensers for Hot Programmable Catalysis

Nanolaminates composed of thin alternating layers of Al2O 3 and TiO 2 (ATO) were engineered by using atomic layer deposition as the dielectric material for a Pt-on-carbon catalytic condenser. Investigation assessed synthesis parameters including the deposition temperature, Al 2 O 3 and TiO 2 layer thicknesses, total number of layers, and a capping Al 2 O 3 layer on the maximum charge accumulation in the Pt catalyst. The highest capacitance ATO configuration demonstrated a specific capacitance of ∼1200 nF/cm 2 with working voltages of ±5 V, enabling the storage of 4 × 10 13 electrons or holes per cm 2 at room temperature. The ATO devices exhibited enhanced capacitance at elevated temperatures of up to 400 °C, suggesting the suitability of these materials for high-temperature applications. Adsorption of carbon monoxide on the Pt/C-ATO device characterized by grazing incidence infrared spectroscopy showed changes in the surface binding energy of 13.1 ± 0.8 kJ/mol for an applied external voltage bias of ±1 V.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2026

Reducing Internal Resistance in Activated Carbon Supercapacitors via Exfoliated Coal-Derived Graphene Additive

Low equivalent series resistance (ESR) is critical for high-rate energy storage devices (e.g., supercapacitors), and graphene is a promising additive for reducing ESR in carbon-based supercapacitor electrodes. However, graphene can be costly and difficult to produce at scale. This study investigates the addition of graphene, produced through electrochemical exfoliation of domestic coal-derived graphite, in activated carbon-based supercapacitors. The coal-derived graphene was incorporated at varying weight loadings and tested in symmetric supercapacitors with aqueous electrolytes. ESR was evaluated using both direct current internal resistance (DCIR) and electrochemical impedance spectroscopy (EIS) measurements. DCIR measurements revealed ESR reductions of ∼34%, ∼18%, and ∼21% at 3, 5, and 10 wt % loadings, respectively, compared to the baseline (0 wt %) of ∼0.54 Ω. These results were further confirmed by EIS measurements. Correspondingly, power density increased by ∼52%, ∼27%, and ∼35% at 3, 5, and 10 wt % loadings relative to the baseline (∼29 kW/kg). Additionally, the electrodes exhibited moderate increases in specific capacitance and energy density, along with stable cycling performance (capacitance retention above 85% after 100,000 cycles) and capacitive behavior (α = 0.95−0.97), suggesting favorable charge transfer kinetics. These findings highlight the potential of exfoliated coal-derived graphene as an effective additive for supercapacitor electrodes.

capacitors↗

DOE OSTI2021

Supercapacitance and superinductance of TiN and NbTiN films in the vicinity of superconductor-to-insulator transition

We investigate the low-temperature complex impedance of disordered insulating thin TiN and NbTiN films in the frequency region 400 Hz–1 MHz in close proximity to the superconductor–insulator transition (SIT). The frequency, temperature, and magnetic field dependencies of the real and imaginary parts of the impedance indicate that in full accord with the theoretical predictions and earlier observations, the films acquire self-induced electronic granularity and become effectively random arrays of superconducting granules coupled via Josephson links. Accordingly, the inductive component of the response is due to superconducting droplets, while the capacitive component results from the effective Josephson junctions capacitances. The impedance crosses over from capacitive to inductive behavior as films go across the transition.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2020

Targeted synthesis and reaction mechanism discussion of Mo 2 C based insertion-type electrodes for advanced pseudocapacitors

Mo 2 C is one of the few compounds that possess good electronic conductivity. Meanwhile, it possesses a natural 1D zigzag tunnel structure that is ideally suited for fast ion diffusion. Here, an effective approach is demonstrated for fabrication of structurally stable N-doped Mo 2 C/C nanobelts. They demonstrate high and fast energy storage ability with initial capacitances of 1139 C g -1 at 1 mV s-1, 151 C g -1 at an extremely high scan rate of 2000 mV s -1 and 208 C g -1 at a discharge current density of 200 A g -1 . After electrochemical activation of cycling, the capacity is continuously enhanced and much higher capacitances of 2523 C g -1 at 1 mV s -1 and 1403 C g -1 at 50 A g -1 are achieved after 15,000 cycles at 50 mV s -1 . Using the power law, it is evaluated that a surface-controlled capacitive process makes the main contribution to the capacity, which is over 90% when the scan rates are higher than 10 mV s -1 and still high as 73% at 1 mV s -1 . From in situ synchrotron XRD, it is found that there is a negligible change in the crystal structure and volume during charging/discharging, reflecting an insertion-type charge storage mechanism.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2020

Electrochemical reduction of europium(iii) using tetra- n -octyl diglycolamide functionalized ordered mesoporous carbon microelectrodes

This work investigates the one-electron reduction of Eu(III) to Eu(II) with ordered mesoporous carbon (OMC) in cavity microelectrode (CME) systems. OMC materials with and without tetra-n-octyl diglycolamide (TODGA) functionalization were subjected to voltammetric measurements and compared with commercial carbon black Vulcan® XC-72. The electrochemical reduction of solution Eu(III) with unfunctionalized OMC, XC-72, and TODGA-functionalized OMC—both within the electrode matrix and on the electrode surface—is reported. The complexation of Eu(III) by TODGA-functionalized OMC prior to electrode preparation incorporates Eu(III) as part of the bulk electrode matrix. Under these conditions, the high capacitance obscures the Eu(III)/Eu(II) redox couple. A signal emerges above the background (capacitive) currents when 2-octanol is added to the TODGA-functionalized OMC as a wetting agent. In contrast, surface Eu(III)–TODGA complexation, when Eu(III) contacts the electrode surface exclusively after electrode preparation, provides a strong response. The addition of 2-octanol to TODGA reduces the capacitance of the electrode and narrows the Eu(III)/Eu(II) redox peak widths. In conclusion, the desorption by reductive stripping of Eu(II) was demonstrated using a 2-octanol modified TODGA OMC CME, opening the possibility for selective separation of Eu from adjacent trivalent lanthanides.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

DOE OSTI2019

All-solid-state supercapacitors from natural lignin-based composite film by laser direct writing

Lignin as a renewable natural resource has been the aim of numerical interest in applications ranging from pitch to porous carbon material. In this work, a facile method is reported to transform lignin into porous conductive carbon structures and interdigitated circuits for supercapacitor devices using femtosecond laser direct writing. Comparative studies revealed that the laser irradiation induced tetrahedral amorphous carbon while only graphitic carbon was obtained through pyrolysis. At the same time, the composite membrane was easily prepared to further optimize the capacities by mixing functional materials (MoS 2 ) into the lignin/polyacrylonitrile (PAN) composite polymers. A MoS2 decorated porous carbon network material could be fabricated through focused femtosecond pulsed laser irradiation of the corresponding composite membranes. The microstructure and spectroscopic features of these laser induced hybrid carbon materials have been deeply investigated. The supercapacitor based on lignin/PAN has high areal specific capacitances of 6.7 mF cm –2 (0.9 F cm –3 ) at 10 mV s –1 . Moreover, doped microsupercapacitors with MoS2 demonstrated enhanced areal capacitances up to 16 mF cm –2 (2.2 F cm –3 ) and at 10 mV s –1 , respectively. The relatively high areal capacitances indicate that the introduced method is potential for innovative manufacturing energy storage devices based on natural lignin.

36 MATERIALS SCIENCE↗

DOE OSTI2022

Thermal stability of antiferroelectric-like Al:HfO 2 thin films with TiN or Pt electrodes

HfO 2 -based antiferroelectric-like thin films are increasingly being considered for commercial devices. However, even with initial promise, the temperature sensitivity of electrical properties such as loss tangent and leakage current remains unreported. 50 nm thick, 4 at. % Al-doped HfO 2 thin films were synthesized via atomic layer deposition with both top and bottom electrodes being TiN or Pt. A study of their capacitance vs temperature showed that the Pt/Al:HfO 2 /Pt had a relative dielectric permittivity of 23.30 ± 0.06 at room temperature with a temperature coefficient of capacitance (TCC) of 78 ± 86 ppm/°C, while the TiN/Al:HfO 2 /TiN had a relative dielectric permittivity of 32.28 ± 0.14 at room temperature with a TCC of 322 ± 41 ppm/°C. The capacitance of both devices varied less than 6% over 1 to 1000 kHz from –125 to 125 °C. Both capacitors maintained loss tangents under 0.03 and leakage current densities of 10 –9 –10 –7 A/cm 2 between –125 and 125 °C. The TiN/Al:HfO 2 /TiN capacitor maintained an energy storage density (ESD) of 18.17 ± 0.79 J/cm 3 at an efficiency of 51.79% ± 2.75% over the –125 to 125 °C range. The Pt/Al:HfO 2 /Pt capacitor also maintained a stable ESD of 9.83 ± 0.26 J/cm 3 with an efficiency of 62.87% ± 3.00% over the same temperature range. Finally, such low losses in both capacitors along with their thermal stability make antiferroelectric-like, Al-doped HfO 2 thin films a promising material for temperature-stable microelectronics.

36 MATERIALS SCIENCE↗

DOE OSTI2025

Strong-coupling quantum dot microscope

Here, we report the development and fabrication of a novel cryogenic instrument, a scanning quantum dot microscope (SQDM), capable of positioning a quantum dot to within tunneling range of a sample surface. The microscope is strong-coupling in the sense that electron wavefunctions in the quantum dot can directly overlap with electron wavefunctions in the sample, in contrast to probes based on electric-field coupling. The SQDM consists of a sharp glass probe with two asymmetric electrodes leading to an aluminum quantum dot at the apex. One electrode is capacitively coupled to the quantum dot, while the other lead is connected to the dot via a tunneling junction. A charge sensing circuit constructed from a high-electron-mobility transistor is attached to the capacitance lead to measure the charge state of the dot. The last key feature of the design is a tilted-apex geometry. This design feature, in conjunction with the capacitive sensing scheme, results in a robust quantum-dot probe capable of operating within angstrom distances of the sample surface while protecting the single tunnel junction responsible for electron transport onto the quantum dot. We demonstrate that our instrument can detect single-electron tunneling events and can also be operated as a standard scanning tunneling microscope capable of nanometer-scale resolution of the surface topography.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2025

Correcting impedance measurements for background parasitics to characterize circuit components in cryogenic environments

Predictable circuit response is a critical prerequisite for accurate electronic measurements. Here, we describe a powerful yet straightforward experimental method and analysis model that utilizes an affordable LCR meter in conjunction with an in situ parasitic-impedance background-correction procedure to measure the temperature-dependent impedance (magnitude and phase) of up to ten individual passive circuit elements in a single cryostat run. We show how the model unambiguously identified a ∼20× drop in capacitance for 22 μF 5XR multilayer ceramic capacitors cooled from 300 K to 360 mK in an environment with a parasitic capacitance of ∼300 pF. The same experimental procedure, based on a simple two-wire measurement, was also used to measure 10 and 22 pF thin-film capacitors and 100 MΩ thick-film resistors. The results showed that the resistor values increased by up to an order of magnitude when the devices were cooled from 300 K to 360 mK. Most importantly, we showed that the simple data-acquisition method, coupled with our analysis model, enabled the measurement of component parasitics, and effectively extended the accuracy of a commercial LCR meter beyond its manufacturer-guaranteed values for a wide range of measurement frequencies. We also showed that, in the current configuration, our simple approach is limited to a capacitance accuracy of ∼10 pF.

Carpenter, R. J. [Santa Clara Univ., Santa Clara, ↗

DOE OSTI2024

Transport signatures of phase fluctuations in superconducting qubits

Abstract Josephson junctions supply the nonlinear inductance element in superconducting qubits. In the widely used transmon configuration, where the junction is shunted by a large capacitor, the low charging energy minimizes the sensitivity of the qubit to charge noise while maintaining the necessary anharmonicity to qubit states. We report here low-frequency transport measurements on small standalone junctions and identically fabricated capacitively-shunted junctions that show two distinct features normally attributed to small capacitance junctions near zero bias: reduced switching currents and prominent finite resistance associated with phase diffusion in the current–voltage characteristic. Our transport data reveals the existence of phase fluctuations in transmons arising from intrinsic junction capacitance.

Wisne, M. (ORCID:0009000610684209)↗

DOE OSTI2020

Merged-Element Transmon

Transmon qubits are ubiquitous in the pursuit of quantum computing using superconducting circuits. However, they have some drawbacks that still need to be addressed. Most importantly, the scalability of transmons is limited by the large device footprint needed to reduce the participation of the lossy capacitive parts of the circuit. In this work, we investigate and evaluate losses in an alternative device geometry, namely, the merged-element transmon (mergemon). To this end, we replace the large external shunt capacitor of a traditional transmon with the intrinsic capacitance of a Josephson junction and achieve an approximately 100 times reduction in qubit dimensions. We report the implementation of the mergemon using a sputtered Nb–amorphous-Si–Nb trilayer film. In an experiment below 10 mK, the frequency of the readout resonator, capacitively coupled to the mergemon, exhibits a qubit-state-dependent shift in the low-power regime. The device also demonstrates the single-photon and multiphoton transitions that represent a weakly anharmonic system in two-tone spectroscopy. The transition spectra are explained well with master-equation simulations. Here, a participation-ratio analysis identifies the dielectric loss of the amorphous-Si tunnel barrier and its interfaces as the dominant source for qubit relaxation. We expect the mergemon to achieve high coherence for relatively small device dimensions when implemented with a low-loss, epitaxially grown, and lattice-matched trilayer.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2024

Modeling the Impacts of Material Properties on Oscillatory Neuron Behavior

In this study, neuromorphic computing, which mimics the functions of biological brains, offers improvements in both latency and energy efficiency over typical von Neumann computing architectures. Spiking neural networks can be especially power-efficient because they encode information temporally and can use more sparse electrical inputs. Here, we study the design of volatile memristors (variable resistors with memory) for neuronal devices, with particular consideration toward the feasibility of all-on-chip oscillation using built-in capacitance. We use circuit simulations to model the behavior of oscillator neurons with a range of realistic material properties. We find that energy inputs increase with insulating-phase resistivity, thermal conductivity, and device aspect ratio. However, we also find that the minimum capacitance needed for oscillation decreases with increasing insulating-phase resistivity, which opposes the constraints for power efficiency. Based on published data on NbO 2 , VO 2 , and EuNiO 3 , we find that existing materials can be engineered for all-on-chip spiking using their parasitic capacitance.

36 MATERIALS SCIENCE↗

DOE OSTI2025

Demonstration of Vertical 2T-nC FeRAM Hybrid Cell and Its Scalability for High-Density 3-D Ferroelectric Capacitor Memory

In this work, we present a comprehensive experimental and modeling study on the scaling of vertical 2T-nC ferroelectric random access memory (FeRAM) hybrid cells, comprising n metal-ferroelectric–metal (MFM) capacitors, to demonstrate a high-performance and high-density 3-D capacitor memory. Our contributions include: 1) successful process integration of vertical 2T-3C FeRAM cells by stacking MFM structures on top of Si CMOS transistors; 2) experimental validation of memory cell functionality, confirming the feasibility of the vertical 2T-nC FeRAM architecture; 3) an analysis of scaling effects on parasitic capacitance in densely integrated 3-D arrays, using 3-D technology computer-aided design (TCAD) simulations; 4) exploration of aggressive stacking of write bitlines (WBLs) to enhance memory density, where ferroelectric linear capacitance ( C FE ) enables self-boosted inhibition under the V W /2 scheme, but renders the V W /3 scheme ineffective due to intolerable write disturbances; and 5) assessment of horizontal scaling, revealing significant increases in read disturbances caused by interplane capacitance between adjacent WBLs ( C Z ). This work represents an early exploration into the potential of 2T-nC FeRAM as a scalable and efficient 3-D memory solution.

42 ENGINEERING↗