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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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NASA NTRSDate not supplied

Detached Melt and Vapor Growth of InI in SUBSA hardware

Indium iodide (InI) single crystals, grown by the Bridgman process, have shown a significant promise as room temperature detector material for X-rays and γ-rays due to the large, close to ideal, bandgap of Eg = 2 eV, and high electrical resistivity. Yet the transport properties of the charge and the detector performance remain inadequate. The Bridgman growth of semiconductor crystals in microgravity have typically resulted in partial dewetting and Marangoni convection, which disturbed the diffusion-controlled growth and produced nonuniform dopant distribution. However, unconfined or partially confined solidification drastically reduced the number of stress-induced defects compared to the confined growth in crucibles on Earth.The goal of the present investigation was to explore melt growth of a heavy metal halide in microgravity, focusing on dewetting, in order to improve the crystalline perfection, i.e., to reduce the number of stress-related defects. InI was chosen because it is non-toxic and has a low melting point of only 365 C (~150 C below the melting point of InSb, used in the SUBSA experiments in 2002). Furthermore, InI melts and evaporates congruently, making it suitable for both growth by directional solidification and growth from the vapor phase. In preparation for the flight experiments, ground-based experiments were conducted in the SUBSA ground unit, consisting of 4 melt growth and 2 vapor growth experiments. The crystals were grown by a gradient freeze method by lowering the setpoint of the furnace. The transparent section of the SUBSA furnace did not allow observations of the solid-liquid interface. Contrary to our expectations, the possible occurrence of dewetting during growth could not be observed. We will present i) the ampoule design and preparation, ii) the experiments conducted in the SUBSA ground unit, iii) the images obtained during the microgravity experiments and iv) the results of the characterization of the grown crystals and detector fabrication.

Crystal Growth↗
NASA NTRS1978

Orbital service module systems analysis study documentation. Volume 1: Executive summary

Potentially feasible system concepts for providing additional power, thermal control, and attitude to the baseline orbiter were investigated in order to support a greater variety of space missions and to extend the orbiter's ability to remain in orbit. Results of these analyses include an incremental growth plan that offers the flexibility of adding capability as, and when, it is needed in order to satisfy emerging user requirements.

Source record↗
DOE OSTI2024

Lyapunov exponent as a signature of dissipative many-body quantum chaos

A distinct feature of Hermitian quantum chaotic dynamics is the exponential increase of certain out-of-time-order correlation (OTOC) functions around the Ehrenfest time with a rate given by a Lyapunov exponent. Physically, the OTOCs describe the growth of quantum uncertainty that crucially depends on the nature of the quantum motion. Here, we employ the OTOC in order to provide a precise definition of dissipative quantum chaos. For this purpose, we compute analytically the Lyapunov exponent for the vectorized formulation of the large- q limit of a q -body Sachdev-Ye-Kitaev model coupled to a Markovian bath. These analytic results are confirmed by an explicit numerical calculation of the Lyapunov exponent for several values of q ≥ 4 based on the solutions of the Schwinger-Dyson and Bethe-Salpeter equations. We show that the Lyapunov exponent decreases monotonically as the coupling to the bath increases and eventually becomes negative at a critical value of the coupling signaling a transition to a dynamics which is no longer quantum chaotic. Therefore, a positive Lyapunov exponent is a defining feature of dissipative many-body quantum chaos. The observation of the breaking of the exponential growth for sufficiently strong coupling suggests that dissipative quantum chaos may require in certain cases a sufficiently weak coupling to the environment. Published by the American Physical Society 2024

García-García, Antonio M.↗
NASA NTRS2009

Observations of Screw Dislocation Driven Growth and Faceting During CVD Homoepitaxy on 4H-SiC On-Axis Mesa Arrays

Previous studies of (0001) homoepitaxial growth carried out on arrays of small-area mesas etched into on-axis silicon-face 4H-SiC wafers have demonstrated that spiral growth emanating from at least one screw dislocation threading the mesa is necessary in order for a mesa to grow taller in the <0001> (c-axis vertical) direction while maintaining 4H stacking sequence [1]. However, even amongst mesas containing the screw dislocation step source necessary for vertical c-axis growth, we have observed striking differences in the height and faceting that evolve during prolonged homoepitaxial growths. This paper summarizes Atomic Force Microscopy (AFM), Electron Channeling Contrast Imaging (ECCI), Scanning Electron Microscopy (SEM), and optical microscopy observations of this phenomenon. These observations support our initially proposed model [2] that the observed large variation (for mesas where 3C-SiC nucleation has not occurred) is related to the lateral positioning of a screw dislocation step source within each etched mesa. When the screw dislocation step source is located close enough to the developing edge/sidewall facet of a mesa, the c-axis growth rate and facet angle are affected by the resulting interaction. In particular, the intersection (or near intersection) of the inward-sloping mesa sidewall facet with the screw dislocation appears to impede the rate at which the spiral provides new steps required for c-axis growth. Also, the inward slope of the sidewall facet during growth (relative to other sidewalls of the same mesa not near the screw dislocation) seems to be impeded by the screw dislocation. In contrast, mesas whose screw dislocations are centrally located grow vertically, but inward sloping sidewall facets shrink the area of the top (0001) growth surface almost to the point of vanishing.

Neudeck, Philip G.↗
NASA NTRS2005

N-Type delta Doping of High-Purity Silicon Imaging Arrays

A process for n-type (electron-donor) delta doping has shown promise as a means of modifying back-illuminated image detectors made from n-doped high-purity silicon to enable them to detect high-energy photons (ultraviolet and x-rays) and low-energy charged particles (electrons and ions). This process is applicable to imaging detectors of several types, including charge-coupled devices, hybrid devices, and complementary metal oxide/semiconductor detector arrays. Delta doping is so named because its density-vs.-depth characteristic is reminiscent of the Dirac delta function (impulse function): the dopant is highly concentrated in a very thin layer. Preferably, the dopant is concentrated in one or at most two atomic layers in a crystal plane and, therefore, delta doping is also known as atomic-plane doping. The use of doping to enable detection of high-energy photons and low-energy particles was reported in several prior NASA Tech Briefs articles. As described in more detail in those articles, the main benefit afforded by delta doping of a back-illuminated silicon detector is to eliminate a "dead" layer at the back surface of the silicon wherein high-energy photons and low-energy particles are absorbed without detection. An additional benefit is that the delta-doped layer can serve as a back-side electrical contact. Delta doping of p-type silicon detectors is well established. The development of the present process addresses concerns specific to the delta doping of high-purity silicon detectors, which are typically n-type. The present process involves relatively low temperatures, is fully compatible with other processes used to fabricate the detectors, and does not entail interruption of those processes. Indeed, this process can be the last stage in the fabrication of an imaging detector that has, in all other respects, already been fully processed, including metallized. This process includes molecular-beam epitaxy (MBE) for deposition of three layers, including metallization. The success of the process depends on accurate temperature control, surface treatment, growth of high-quality crystalline silicon, and precise control of thicknesses of layers. MBE affords the necessary nanometer- scale control of the placement of atoms for delta doping. More specifically, the process consists of MBE deposition of a thin silicon buffer layer, the n-type delta doping layer, and a thin silicon cap layer. The n dopant selected for initial experiments was antimony, but other n dopants as (phosphorus or arsenic) could be used. All n-type dopants in silicon tend to surface-segregate during growth, leading to a broadened dopant-concentration- versus-depth profile. In order to keep the profile as narrow as possible, the substrate temperature is held below 300 C during deposition of the silicon cap layer onto the antimony delta layer. The deposition of silicon includes a silicon- surface-preparation step, involving H-termination, that enables the growth of high-quality crystalline silicon at the relatively low temperature with close to full electrical activation of donors in the surface layer.

Blacksberg, Jordana↗
DOE OSTI2024

Non-Equilibrium Synthesis of Semiconductor Alloys for Energy Applications

This project explores the synthesis under equilibrium/non-equilibrium conditions of semiconductor alloys critical to SSL to impose top-down influence on the formation of atomic-scale microstructures. A plasma-enhanced MOCVD (PE-MOCVD) technique is employed, in which plasma generated within the low-pressure reactor environment introduces additional energy that is delivered to the gas-phase reactants and growth surface, allowing relatively low substrate temperatures to be maintained, rapidly switching the crystal-growth environment into a non-equilibrium state. The project coordinates on-going work at National Renewable Energy Laboratory (NREL) that addresses order/disorder Al x In 1-x P (AlInP) confinement structures, which are predicted to surpass the power-conversion efficiency of current materials used for red/amber LEDs as components of so-called color-mixed LEDs, which integrate multiple LEDs in a single device for improved color rendering. Ordering, phase separation, and strain relaxation are central to this technology. During growth, each spontaneous process could be suppressed or enhanced on demand by application of plasma as an additional handle. This technique could have broader applications to other energy technologies, such as photovoltaics.

14 SOLAR ENERGY↗
DOE OSTI2021

Entropic formation of a thermodynamically stable colloidal quasicrystal with negligible phason strain

Quasicrystals have been discovered in a variety of materials ranging from metals to polymers. Yet, why and how they form is incompletely understood. In situ transmission electron microscopy of alloy quasicrystal formation in metals suggests an error-and-repair mechanism, whereby quasiperiodic crystals grow imperfectly with phason strain present, and only perfect themselves later into a high-quality quasicrystal with negligible phason strain. The growth mechanism has not been investigated for other types of quasicrystals, such as dendrimeric, polymeric, or colloidal quasicrystals. Soft-matter quasicrystals typically result from entropic, rather than energetic, interactions, and are not usually grown (either in laboratories or in silico) into large-volume quasicrystals. Consequently, it is unknown whether soft-matter quasicrystals form with the high degree of structural quality found in metal alloy quasicrystals. Here, we investigate the entropically driven growth of colloidal dodecagonal quasicrystals (DQCs) via computer simulation of systems of hard tetrahedra, which are simple models for anisotropic colloidal particles that form a quasicrystal. Using a pattern recognition algorithm applied to particle trajectories during DQC growth, we analyze phason strain to follow the evolution of quasiperiodic order. As in alloys, we observe high structural quality; DQCs with low phason strain crystallize directly from the melt and only require minimal further reduction of phason strain. Finally, we also observe transformation from a denser approximant to the DQC via continuous phason strain relaxation. Our results demonstrate that soft-matter quasicrystals dominated by entropy can be thermodynamically stable and grown with high structural quality––just like their alloy quasicrystal counterparts.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS1980

Calculations and measurements in support of the triglycine sulfate zero gravity growth experiment

Two areas of investigation which are required for maximum utilization of the flight experiment results from the solution growth of crystals of triglycine sulfate (TGS) are addressed. The use of an ultramicroscope to characterize structural defects in the grown TGS crystals is discussed. Mie theory is applied to the light scattering expected from idealized crystal defects in order to predict the sensitivity of ultramicroscopy in the detection of small defects. Secondly, the measurement of optical properties of TGS solutions in water is discussed. This data is needed in order to interpret interferometric studies of mass transport through the TGS solution during the growth phase of the flight experiment. In particular, refractive index data is obtained for a wide range of temperatures and concentrations of TGS solutions. Absorbance measurements in the ultraviolet have also been made for the same samples.

Springer, J. M.↗
DOE OSTI2021

The growth of density perturbations in the last ~10 billion years from tomographic large-scale structure data

In order to investigate the origin of the ongoing tension between the amplitude of matter fluctuations measured by weak lensing experiments at low redshifts and the value inferred from the cosmic microwave background anisotropies, we reconstruct the evolution of this amplitude from z ~ 2 using existing large-scale structure data. To do so, we decouple the linear growth of density inhomogeneities from the background expansion, and constrain its redshift dependence making use of a combination of 6 different data sets, including cosmic shear, galaxy clustering and CMB lensing. We analyze these data under a consistent harmonic-space angular power spectrum-based pipeline. We show that current data constrain the amplitude of fluctuations mostly in the range 0.2 < z < 0.7, where it is lower than predicted by . This difference is mostly driven by current cosmic shear data, although the growth histories reconstructed from different data combinations are consistent with each other, and we find no evidence of systematic deviations in any particular experiment. In spite of the tension with , the data are well-described by the model, albeit with a lower value of S 8 ≡ σ 8 (Ω m /0.3) 0.5 . As part of our analysis, we find constraints on this parameter of S 8 = 0.7781 ± 0.0094 (68% confidence level), reaching almost percent-level errors comparable with CMB measurements, and 3.4σ away from the value found by .

79 ASTRONOMY AND ASTROPHYSICS↗
NASA NTRS1972

The kinetic and dynamic aspects of corrosion fatigue in a gaseous hydrogen environment.

The stable, subcritical crack growth stage of fracture under conditions of corrosion fatigue was studied experimentally in order to demonstrate the importance of the kinetic and dynamic aspects of environment-sensitive behavior. The cyclic loading of a titanium alloy in a low-pressure gaseous hydrogen environment is compared to that in a vacuum environment. The influence of the hydrogen environment on the rate of subcritical crack growth is discussed.

Nelson, H. G.↗
DOE OSTI2020

Feedback regulation of crystal growth by buffering monomer concentration

Abstract Crystallization is a ubiquitous means of self-assembly that can organize matter over length scales orders of magnitude larger than those of the monomer units. Yet crystallization is notoriously difficult to control because it is exquisitely sensitive to monomer concentration, which changes as monomers are depleted during growth. Living cells control crystallization using chemical reaction networks that offset depletion by synthesizing or activating monomers to regulate monomer concentration, stabilizing growth conditions even as depletion rates change, and thus reliably yielding desired products. Using DNA nanotubes as a model system, here we show that coupling a generic reversible bimolecular monomer buffering reaction to a crystallization process leads to reliable growth of large, uniformly sized crystals even when crystal growth rates change over time. Buffering could be applied broadly as a simple means to regulate and sustain batch crystallization and could facilitate the self-assembly of complex, hierarchical synthetic structures.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
NASA NTRS1989

A critical comparison of turbulence models for homogeneous shear flows in a rotating frame

A variety of turbulence models, including five second-order closure models and four two equation models, are tested for the problem of homogeneous turbulent shear flow in a rotating frame. The model predictions for the time evolution of the turbulent kinetic energy and dissipation rate, as well as those for the equilibrium states, are compared with the results of physical and numerical experiments. Most of the two-equation models predict the same results for all rotation rates (omega/S) in which there is an exponential time growth of the turbulent kinetic energy and dissipation rate. The second-order closures are qualitatively superior since, consistent with physical and numerical experiments, they only predict this type of unstable flow for intermediate rotation rates in the range -0.1 less than or equal to omega/S less than or equal to 1.6. For rotation rates outside this range, there is an exchange of stabilities with a solution whose kinetic energy and dissipation rate decay with time. Although the second-order closures are superior to the two-equation models, there are still problems with the quantitative accuracy of their predictions.

Speziale, Charles G.↗
NASA NTRS1989

A critical comparison of turbulence models for homogeneous shear flows in a rotating frame

A variety of turbulence models, including five second-order closure models and four two equation models, are tested for the problem of homogeneous turbulent shear flow in a rotating frame. The model predictions for the time evolution of the turbulent kinetic energy and dissipation rate, as well as those for the equilibrium states, are compared with the results of physical and numerical experiments. Most of the two-equation models predict the same results for all rotation rates (omega/S) in which there is an exponential time growth of the turbulent kinetic energy and dissipation rate. The second-order closures are qualitatively superior since, consistent with physical and numerical experiments, they only predict this type of unstable flow for intermediate rotation rates in the range -0.1 less than or equal to omega/S less than or equal to 1.6. For rotation rates outside this range, there is an exchange of stabilities with a solution whose kinetic energy and dissipation rate decay with time. Although the second-order closures are superior to the two-equation models, there are still problems with the quantitative accuracy of thier predictions.

Speziale, Charles G.↗
NASA NTRS1990

A critical comparison of turbulence models for homogeneous shear flows in a rotating frame

A variety of turbulence models, including five second-order closure models and four two equation models, are tested for the problem of homogeneous turbulent shear flow in a rotating frame. The model predictions for the time evolution of the turbulent kinetic energy and dissipation rate, as well as those for the equilibrium states, are compared with the results of physical and numerical experiments. Most of the two-equation models predict the same results for all rotation rates (omega/S) in which there is an exponential time growth of the turbulent kinetic energy and dissipation rate. The second-order closures are qualitatively superior since, consistent with physical and numerical experiments, they only predict this type of unstable flow for intermediate rotation rates in the range -0.1 less than or equal to omega/S less than or equal to 1.6. For rotation rates outside this range, there is an exchange of stabilities with a solution whose kinetic energy and dissipation rate decay with time. Although the second-order closures are superior to the two-equation models, there are still problems with the quantitative accuracy of their predictions.

Speziale, Charles G.↗
DOE OSTI2024

Disorder-driven localization and electron interactions in Bi x ⁢ TeI thin films

Strong disorder has a crucial effect on the electronic structure in quantum materials by increasing localization, interactions, and modifying the density of states. Bi x TeI films grown at room temperature and 230 K exhibit dramatic magnetotransport effects due to disorder, localization, and electron correlation effects, including a metal-insulator transition at a composition that depends on growth temperature. The increased disorder caused by growth at 230 K causes the conductivity to decrease by several orders of magnitude for several compositions of Bi x TeI. The transition from metal to insulator with decreasing composition x is accompanied by a decrease in the dephasing length, which leads to the disappearance of the weak-antilocalization effect. Electron-electron interactions cause low temperature conductivity corrections on the metallic side and Efros-Shklovskii variable range hopping on the insulating side, effects which are absent in single crystalline Bi x TeI. Finally, the observation of a tunable metal-insulator transition and the associated strong localization and quantum effects in Bi x TeI shows the possibility of tuning spin transport in quantum materials via disorder.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Disordering of helium gas bubble superlattices in molybdenum under ion irradiation and thermal annealing

Self-organization of gas bubbles causes the formation of an ordered array of nanoscale gas bubbles (a gas bubble superlattice), a highly efficient mechanism for gas storage under irradiation. Here, the stability of helium (He) gas bubble superlattices in molybdenum (Mo) under krypton (Kr) ion irradiation and thermal annealing has been investigated. The He gas bubble superlattices gradually become disordered under Kr ion irradiation at 300° C, and the order-disorder transformation process completes at 2.5 dpa. Both transmission electron microscopy (TEM) and synchrotron-based small-angle X-ray scattering (SAXS) reveal that the order-disorder transformation of He gas bubble superlattices is associated with a slight increase in the average bubble size. Phase-field modeling indicates that the inhomogeneous growth and coarsening of bubbles/voids cause the disordering of imperfect superlattices under irradiation and implies that highly ordered superlattices could potentially exhibit much stronger resistance to irradiation damage. Under thermal annealing, the He gas bubble superlattices in Mo become unstable and disordered at 1000° C with the bubble size increasing from ~1.1 to ~1.6 nm. The finding in this research provides insights into the disordering mechanisms of defect superlattices as well as guidance for designing stable defect superlattices in harsh environments.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗
DOE OSTI2021

Deposition control of model glasses with surface-mediated orientational order

We introduce a minimal model of solid-forming anisotropic molecules that displays, in thermal equilibrium, surface orientational order without bulk orientational order. The model reproduces the nonequilibrium behavior of recent experiments in which a bulk nonequilibrium structure grown by deposition contains regions of orientational order characteristic of the surface equilibrium. This order is deposited, in general, in a nonuniform way because of the emergence of a growth-poisoning mechanism that causes equilibrated surfaces to grow slower than non-equilibrated surfaces. We use evolutionary methods to design oscillatory protocols able to grow nonequilibrium structures with uniform order, demonstrating the potential of protocol design for the fabrication of this class of materials.

Whitelam, Stephen (ORCID:0000000200866803)↗
NASA NTRS1999

Growth and Characterization of Bulk GeSi Solid Solutions

In this work we have grown and characterized several GeSi samples in order to investigate the effects that Silicon concentration, applied magnetic field, and liquid encapsulation have on crystalline quality. Characterization techniques include NDIC microscopy and microprobe spectroscopy. Two samples were grown with a Silicon concentration of approximately 3% and are compared to previous growths having a Silicon fraction of approximately 5%. Growth conditions for one of these samples was varied with the presence of an external applied magnetic field to investigate the possibility of magnetic field damping. A comparison between these two ingots, and with previously grown material, revealed no clear improvement in sample crystalline quality. Three additional samples were grown using a CaCl2 liquid encapsulation technique that produced GeSi material with improved structural quality over previous samples. Comparisons to prior non-encapsulation grown material, details of our methodology, and suggestions for further improvements are discussed.

Ritter, Timothy M.↗