Search NASA⌕ Search

SEARCH · Search NASA

Results for “surface morphology”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 559 records · Page 31

Crystalline to amorphous phase transition of tin oxide nanocrystals induced by SHI at low temperature

Tin oxide (SnO{sub 2}) thin films were deposited using pulsed laser deposition (PLD) technique on Si substrates. The as-deposited films were irradiated using 100 MeV Ag ions at different fluences ranging from 3x10{sup 13} to 3x10{sup 14} ions/cm{sup 2} at an incidence angle of 75 deg. with respect to surface normal at liquid nitrogen (LN2) temperature. The as-deposited and irradiated films have been characterized using X-ray diffraction (XRD) and atomic force microscopy (AFM) techniques to study the modifications in structural and surface morphological properties. Nanocrystalline film become completely amorphous and nanograins of tin oxide disappeared from the surface as indicated by XRD spectra and AFM micrographs respectively.

36 MATERIALS SCIENCE↗

Growth mechanisms study of microcrystalline silicon deposited by SiH{sub 4}/H{sub 2} plasma using tailored voltage waveforms

The use of Tailored Voltage Waveforms is a technique wherein one uses non-sinusoidal waveforms with a period equivalent to RF frequencies to excite a plasma. It has been shown to be an effective technique to decouple maximum Ion Bombardment Energy (IBE) from the ion flux at the surface of the electrodes. In this paper, we use it for the first time as a way to scan through the IBE in order to study the growth mechanism of hydrogenated microcrystalline silicon using a SiH{sub 4}/H{sub 2} chemistry. We find that at critical energies, a stepwise increase in the amorphous to microcrystalline transition thickness is observed, as detected by Real Time Spectroscopic Ellipsometry. The same energy thresholds (30 eV and 70 eV) are found to be very influential on the final surface morphology of the samples, as observed by Atomic Force Microscopy. These thresholds correspond to SiH{sub x}{sup +} bulk displacement (30 eV) and H{sub x}{sup +} (70 eV) surface displacement energies. A model is therefore proposed to account for the impact of these ions on the morphology of μc-Si:H growth.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Morphology and Photoelectric Characteristics of the Thin-Film Polycrystalline Structure SnO{sub 2}-CdS/Cu(InGa)Se{sub 2}-Ag

The surface morphology and photoelectric characteristics of a thin-film SnO{sub 2}-CdS/Cu(InGa)Se{sub 2}-Ag heterostructure have been studied. The chemical and phase composition of the Cu(InGa)Se{sub 2} film in the synthesized structure have been investigated. The current transfer mechanism has been studied, and the main parameters of the semiconductor material have been determined. It has been found that there are no oppositely connected barriers in the heterostructure.

14 SOLAR ENERGY↗

Sapphire substrate-induced effects in VO{sub 2} thin films grown by oxygen plasma-assisted pulsed laser deposition

We investigate the structural and electronic properties of VO{sub 2} thin films on c-plane sapphire substrates with three different surface morphologies to control the strain at the substrate-film interface. Only non-annealed substrates with no discernible surface features (terraces) provided a suitable template for VO{sub 2} film growth with a semiconductor-metal transition (SMT), which was much lower than the bulk transition temperature. In addition to strain, oxygen vacancy concentration also affects the properties of VO{sub 2}, which can be controlled through deposition conditions. Oxygen plasma-assisted pulsed laser deposition allows favorable conditions for VO{sub 2} film growth with SMTs that can be easily tailored for device applications.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Room Temperature Ferromagnetism in Cu Doped ZnO Thin Films

We report on the growth of Cu doped ZnO thin films for different Cu concentration from 0.1%, to10% by RF magnetron sputtering. The X-ray diffraction study has shown single phase wurtzite type ZnO thin films with no evidence of copper/copper oxide or any other secondary phases. Room temperature ferromagnetism was observed in RF sputtered Cu doped ZnO films with magnetic moment per Cu atom first increasing and then decreasing with an increasing Cu content. Decrease of band gap with Cu doping, indicating strong p-d mixing of O and Cu is clear by the absorption spectroscopy study. The surface morphology by AFM of pure and Cu doped ZnO thin films show average grain size of 110nm and RMS surface roughness of 2.15 nm.

36 MATERIALS SCIENCE↗

Surface and subsurface cracks characteristics of single crystal SiC wafer in surface machining

Different machining processes were used in the single crystal SiC wafer machining. SEM was used to observe the surface morphology and a cross-sectional cleavages microscopy method was used for subsurface cracks detection. Surface and subsurface cracks characteristics of single crystal SiC wafer in abrasive machining were analysed. The results show that the surface and subsurface cracks system of single crystal SiC wafer in abrasive machining including radial crack, lateral crack and the median crack. In lapping process, material removal is dominated by brittle removal. Lots of chipping pits were found on the lapping surface. With the particle size becomes smaller, the surface roughness and subsurface crack depth decreases. When the particle size was changed to 1.5µm, the surface roughness Ra was reduced to 24.0nm and the maximum subsurface crack was 1.2µm. The efficiency of grinding is higher than lapping. Plastic removal can be achieved by changing the process parameters. Material removal was mostly in brittle fracture when grinding with 325# diamond wheel. Plow scratches and chipping pits were found on the ground surface. The surface roughness Ra was 17.7nm and maximum subsurface crack depth was 5.8 µm. When grinding with 8000# diamond wheel, the material removal was in plastic flow. Plastic scratches were found on the surface. A smooth surface of roughness Ra 2.5nm without any subsurface cracks was obtained. Atomic scale removal was possible in cluster magnetorheological finishing with diamond abrasive size of 0.5 µm. A super smooth surface eventually obtained with a roughness of Ra 0.4nm without any subsurface crack.

36 MATERIALS SCIENCE↗

Crystal truncation rods from miscut surfaces

Crystal truncation rods are used to study surface and interface structure. Since real surfaces are always somewhat miscut from a low index plane, it is important to study the effect of miscuts on crystal truncation rods. We develop a model that describes the truncation rod scattering from miscut surfaces that have steps and terraces. We show that nonuniform terrace widths and jagged step edges are both forms of roughness that decrease the intensity of the rods. Nonuniform terrace widths also result in a broad peak that overlaps the rods. We use our model to characterize the terrace width distribution and step edge jaggedness on three SrTiO 3 (001) samples, showing excellent agreement between the model and the data, confirmed by atomic force micrographs of the surface morphology. As a result, we expect our description of terrace roughness will apply to many surfaces, even those without obvious terracing.

36 MATERIALS SCIENCE↗

High Performance GaAs Solar Cells Grown at High Growth Rates by Atmospheric-Pressure Dynamic Hydride Vapor Phase Epitaxy

We report GaAs solar cells grown at rates exceeding 300 um/h by atmospheric-pressure dynamic hydride vapor phase epitaxy (D-HVPE). The surface morphology of the GaAs layers grown at those rates is smooth, with root mean square surface roughness of < 1.4 nm. We grew GaAs solar cells at rates from 35 - 309 um/h with negligible degradation in open circuit voltages (VOC), which ranged from 1.04 - 1.07 V. We showed the slight decrease in VOC is due to lack of doping optimization at higher growth rates. Deep level transient spectroscopy measurements showed low point defect densities that increases slightly with growth rate from 35 - 309 um/h. The low point defect concentrations and the high VOCs indicate that high material quality can be maintained at these extremely high growth rates, enabling the deposition of high efficiency cells in mere seconds instead of hours.

14 SOLAR ENERGY↗

A Moderate D/H Ratio for a Surficial Water Reservoir on Mars

Martian surface morphology implies that Mars was once warm enough to maintain persistent liquid water on its surface and that water played a significant role in the formation of weathered/altered terrains [e.g., 1, 2, 3]. Volatiles exhaled by volcanic activity would have been the dominant greenhouse gases and would have significantly affected the Martian climate. The enrichment of some volatile elements in the atmosphere, which would have dissolved in surface water, could also have influenced water chemistry (e.g., acidity) and played a significant role in weathering and aqueous alteration processes. While much of this picture is qualitative, Martian meteorites contain records of major Martian volatile reservoirs. This study characterizes Martian surficial volatile reservoirs based on in situ ion microprobe analyses of volatile abundances and H-isotopes of glassy phases (groundmass glass [GG] and impact melt [IM]) in Martian basalts (shergottites). Although these meteorites are of igneous origin, some glassy phases underwent impact-induced modification that trapped surficial and atmospheric volatile components [4, 5]; e.g., inert gases contained in IMs from EETA79001 (EETA79) match the relative abundances of modern Martian atmosphere [6]. Analyses of these glassy phases demonstrate that surficial volatile reservoirs have distinct D/H ratios from their magmatic volatiles.

Usui, Tomohiro↗

In Adsorption on Si(112) and its Impact on Ge Growth

The change of the Si(112) surface morphology and structure induced by In adsorption, as well as the impact of In preadsorption on the growth kinetics and island morphology in Ge/Si(112) epitaxy, has been investigated by means of low-energy electron microscopy and diffraction. The intrinsically faceted Si(112) surface is smoothed upon In saturation. In contrast to a previously reported (7 x 1) reconstruction (reported in a recent work of Gai et al.), we observe a [(3 + x) x 1] superstructure, with {approx} 1/2. This is attributed to the coexistence of (3 x 1) and (4 x 1) building blocks with In vacancies. The presence of such vacancy rows is confirmed by the saturation of the [(3 + x) x 1] structure at about 0.8 monolayers. Ge growth on In-saturated Si(112) leads to the formation of 3-D islands, the morphology of which depends on the growth temperature. At 450 C, isotropic and dashlike islands are observed, whereas at 500 C, larger islands with a triangular outline are found. The orientation of the side facets of these triangular islands have been identified to be (111), (013), and (103). The dependence of the island density on the growth temperature indicates an enhanced Ge surface diffusion, as compared with growth on bare Si(112).

36 MATERIALS SCIENCE↗

Impact of the non-planar morphology of pre-patterned substrates on the structural and electronic properties of embedded site-controlled InAs quantum dots

We present an experimental and theoretical analysis of the influence of a surface nanopattern on the properties of embedded InAs/GaAs quantum dots (QD). In particular, we analyze QDs grown on nanoimprint lithography (NIL) patterned grooves and investigate the influence of the non-planar surface morphology on the size, shape, strain distribution, and electronic structure of the embedded QDs. We show that the height reduction of InAs QDs during GaAs capping is significantly less pronounced for the QDs grown on the pattern than for the self-assembled QDs. Furthermore, the pattern has a strong impact on the strain and composition profile within the QD. The experimentally observed strain distribution was successfully reproduced with a three-dimensional model assuming an inverse-cone type composition gradient. Moreover, we show that the specific morphology of the QDs grown in the grooves gives rise to an increase of the vertically polarized photoluminescence emission which was explained by employing 8-band k.p calculations. Our findings emphasize that the surface curvature of the pattern not only determines the nucleation sites of the QDs but also has a strong impact on their morphological properties including shape, size, composition profile, and strain distribution. These properties are strongly cross-correlated and determine the electronic and optical characteristics of the QDs.

36 MATERIALS SCIENCE↗

Improvement of the wear resistance of electroplated Au-Ni coatings by Zr ion bombardment of Ni-B sublayer

The effect of bombardment of the Ni-B sublayer by Zr ion beams on the surface morphology and tribomechanical properties of Au-Ni coatings was investigated. It was found that the treatment has no significant effect on the surface roughness and grain size of the Au-Ni coatings, while it provides essential reducing of their friction coefficient and improvement of wear resistance. It is shown that increased wear resistance of these coatings was caused by their strain hardening resulted from localization of plastic strain. The optimal Zr fluence were determined that provide the maximum reduction of linear wear of the coatings.

36 MATERIALS SCIENCE↗

Development of Broadband Microwave Absorber and Measurement of Its Magnetic and Microwave Properties

Toroid shape Co-doped barium hexaferrites of composition (BaFe{sub 11}CoO{sub 19}) are prepared by standard sintering technology as a sample. In this work, XRD is used to identify the structure of synthesized sample. Vibrating sample magnetometer is used to obtain magnetic hysteresis loop of sample. Scanning electron microscope is used for surface morphology of sample. The complex permeability and permittivity are measured with commercial automation measurement set up in the 2–18 GHz frequency range. As a result of measurement, the calculation of reflection loss of the synthesized samples has been carried out. Investigation of microwave absorption properties revealed that the maximum reflection loss of Co-doped barium hexaferrite sample is around −20 dB and almost flat in the measurement frequency band. From these results, it was concluded that Co-doped barium hexaferrites of composition had a good potential as microwave absorber in the broadband frequency range.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Composite plasma polymerized sulfonated polystyrene membrane for PEMFC

Highlights: • Methyl methane sulfonate (MMS) is used as the sulfonating agent. • The proton conductivity of the membrane is found to be 0.141 S cm{sup −1}. • Power density of fuel cell with styrene/MMS membrane is 0.5 W cm{sup −2}. • The membrane exhibits thermal stability up to 140 °C. - Abstract: This work presents the introduction of an organic compound methyl methane sulfonate (MMS) for the first time in fabrication of polystyrene based proton exchange membrane (PEM) by plasma polymerization process. The membrane is fabricated by co-polymerizing styrene and MMS in capacitively coupled continuous RF plasma. The chemical composition of the plasma polymerized polymer membrane is investigated using Fourier Transform Infrared Spectroscopy which reveals the formation of composite structure of styrene and MMS. The surface morphology studied using AFM and SEM depicts the effect of higher partial pressure of MMS on surface topography of the membrane. The proton transport property of the membrane studied using electrochemical impedance spectroscopy shows the achievement of maximum proton conductivity of 0.141 S cm{sup −1} which is comparable to Nafion 117 membrane. Fuel cell performance test of the synthesized membrane shows a maximum power density of 500 mW cm{sup −2} and current density of 0.62 A cm{sup −2} at 0.6 V.

36 MATERIALS SCIENCE↗

Dual roles of stepped surfaces: Catalytic initiators and stabilizers of oxygen-induced reconstructions

Understanding surface restructuring under reactive conditions is crucial for designing next-generation catalysts with enhanced activity and selectivity. Here, we employ in situ transmission electron microscopy to directly observe the dynamic behavior of Cu(100) and Cu(410) surfaces under both oxidizing and vacuum annealing conditions, revealing a complex interplay among surface crystallography, local oxygen coverage, Cu atom mobility, and step-edge reactivity. The stepped Cu(410) surface acts as an active site for O 2 dissociation, triggering the oscillatory transformation of the c(2 × 2)–O phase into the more stable (2$\sqrt2$ ×$\sqrt2$)R45°–O missing-row (MR) structure on the adjacent flat Cu(100) terrace. Under subsequent vacuum annealing, this same Cu(410) facet exhibits remarkable structural resilience, preserving the MR reconstruction and chemisorbed oxygen. In contrast, the Cu(100) surface undergoes reversible transitions from the MR structure back to the c(2 × 2)–O phase. These results highlight the critical role of surface morphology in directing both the formation and stability of oxygen-induced reconstructions, demonstrating that stepped surfaces serve dual roles as both catalytic initiators and structural stabilizers. Furthermore, this work offers atomic-level insights into the environment-responsive behavior of copper surfaces, establishing a mechanistic basis for designing Cu-based catalysts through facet-specific control of surface reactivity.

36 MATERIALS SCIENCE↗

Saturation effects in femtosecond laser ablation of silicon-on-insulator

We report a surface morphology study on single-shot submicron features fabricated on silicon on insulator by tightly focused femtosecond laser pulses. In the regime just below single-shot ablation threshold nano-tips are formed, whereas in the regime just above single-shot ablation threshold, a saturation in the ablation depth is found. We attribute this saturation by secondary laser absorption in the laser-induced plasma. In this regime, we find excellent agreement between the measured depths and a simple numerical model. When the laser fluence is further increased, a sharp increase in ablation depth is observed accompanied by a roughening of the ablated hole.

36 MATERIALS SCIENCE↗

Synergistic etch rates during low-energetic plasma etching of hydrogenated amorphous carbon

The etch mechanisms of hydrogenated amorphous carbon thin films in low-energetic (<2 eV) high flux plasmas are investigated with spectroscopic ellipsometry. The results indicate a synergistic effect for the etch rate between argon ions and atomic hydrogen, even at these extremely low kinetic energies. Ion-assisted chemical sputtering is the primary etch mechanism in both Ar/H{sub 2} and pure H{sub 2} plasmas, although a contribution of swift chemical sputtering to the total etch rate is not excluded. Furthermore, ions determine to a large extent the surface morphology during plasma etching. A high influx of ions enhances the etch rate and limits the surface roughness, whereas a low ion flux promotes graphitization and leads to a large surface roughness (up to 60 nm).

36 MATERIALS SCIENCE↗

Study of polyvinyl alcohol nanofibrous membrane by electrospinning as a magnetic nanoparticle delivery approach

Electrospinning technique was used to fabricate polyvinyl alcohol (PVA)-based magnetic biodegradable nanofibers. PVA solution was mixed with ferrofluid or magnetic nanoparticles (MNPs) powder and formed two individual nanofibrous membranes (PVA/ferrofluid and PVA/MNPs powder) by electrospinning. The surface morphology of the nanofibrous membrane was characterized by scanning electron microscopy and the magnetic properties were measured by vibrating sample magnetometer. Macrophages (RAW 264.7) were co-cultured with the nanofibrous membranes for 12, 24, and 48 h and exhibited good cell viability (>95%). Results showed that the PVA fibers would be degraded and the embedded Fe{sub 3}O{sub 4} nanoparticles would be released and delivered to cells.

60 APPLIED LIFE SCIENCES↗