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At least 577 records · Page 32

The Hardest Superconducting Metal Nitride

Transition–metal (TM) nitrides are a class of compounds with a wide range of properties and applications. Hard superconducting nitrides are of particular interest for electronic applications under working conditions such as coating and high stress (e.g., electromechanical systems). However, most of the known TM nitrides crystallize in the rock–salt structure, a structure that is unfavorable to resist shear strain, and they exhibit relatively low indentation hardness, typically in the range of 10–20 GPa. Here, we report high–pressure synthesis of hexagonal δ–MoN and cubic γ–MoN through an ion–exchange reaction at 3.5 GPa. The final products are in the bulk form with crystallite sizes of 50 – 80 μm. Based on indentation testing on single crystals, hexagonal δ–MoN exhibits excellent hardness of ~30 GPa, which is 30% higher than cubic γ–MoN (~23 GPa) and is so far the hardest among the known metal nitrides. The hardness enhancement in hexagonal phase is attributed to extended covalently bonded Mo–N network than that in cubic phase. The measured superconducting transition temperatures for δ–MoN and cubic γ–MoN are 13.8 and 5.5 K, respectively, in good agreement with previous measurements.

36 MATERIALS SCIENCE↗

Depth resolved lattice-charge coupling in epitaxial BiFeO3 thin film

For epitaxial films, a critical thickness (t c ) can create a phenomenological interface between a strained bottom layer and a relaxed top layer. Here, we present an experimental report of how the tc in BiFeO 3 thin films acts as a boundary to determine the crystalline phase, ferroelectricity, and piezoelectricity in 60 nm thick BiFeO 3 /SrRuO 3 /SrTiO 3 substrate. We found larger Fe cation displacement of the relaxed layer than that of strained layer. In the time-resolved X-ray microdiffraction analyses, the piezoelectric response of the BiFeO 3 film was resolved into a strained layer with an extremely low piezoelectric coefficient of 2.4 pm/V and a relaxed layer with a piezoelectric coefficient of 32 pm/V. The difference in the Fe displacements between the strained and relaxed layers is in good agreement with the differences in the piezoelectric coefficient due to the electromechanical coupling.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Ionic electroactive polymer actuators as active microfluidic mixers

On-chip sample processing is integral to the continued development of lab-on-a-chip devices for various applications. An active microfluidic mixer prototype is proposed using ionic electroactive polymer actuators (IEAPAs) as artificial cilia. A proof-of-concept experiment was performed in which the actuators were shown to produce localized flow pattern disruptions in the laminar flow regime. Suggestions for further engineering and optimization of a scaled-down, complete device are provided. Furthermore, the device in its current state of development necessitates further engineering, the use of IEAPAs addresses issues currently associated with the use of electromechanical actuators as active microfluidic mixers and may prove to be a useful alternative to other similar materials.

36 MATERIALS SCIENCE↗

Visualization of ion transport in Nafion using electrochemical strain microscopy

The electromechanical response of a Nafion membrane immersed in water was probed using electrochemical strain microscopy (ESM) to redistribute protons and measure the resulting local strain that is caused by the movement of protons. We also measured the relaxation of protons from the surface resulting from proton diffusion. Using this technique, we can visualize and analyze the local strain change resulting from the redistribution and relaxation of hydrated protons.

Kim, Suran↗

Compositional phase diagram and microscopic mechanism of Ba 1-x Ca x Zr y Ti 1-y O 3 relaxor ferroelectrics

With extensive first-principles density-functional calculations, we construct a three-dimensional compositional phase diagram of Ba1-xCaxZryTi1-yO3 (BCZT) with the Ca and Zr content in the ranges of 0 ≤ xCa ≤ 0.2 and 0 ≤ yZr ≤ 1. Our calculations show that, when the Zr content increases, the difference in energy and difference in the structural parameters of the cubic, tetragonal, orthorhombic, and rhombohedral phases of BCZT are reduced. Eventually, all four phases merge into a multiphase with coexisting cubic structures (MPCCS) under Zr-rich conditions, indicating that BCZT undergoes phase transition from a normal ferroelectric (NFE) to a relaxor ferroelectric (RFE), consistent with experimental observations. The 3D diagram shows that the regions of merged and separated energy surfaces correspond to the regions of the RFE and NFE, respectively, which suggests that a MPCCS corresponds to a RFE. In addition, with the MPCCS model and Landau–Devonshire theory, we provide an interpretation of the high electromechanical properties of the BCZT relaxor ferroelectric and apply it to the classical local random field and micro–macro domain transition models.

Liu, Shi-Yu↗

Tailoring the crystal growth of quartz on silicon for patterning epitaxial piezoelectric films

Epitaxial films of piezoelectric α-quartz could enable the fabrication of sensors with unprecedented sensitivity for prospective applications in electronics, biology and medicine. However, the prerequisites are harnessing the crystallization of epitaxial α-quartz and tailoring suitable film microstructures for nanostructuration. Here, we bring new insights into the crystallization of epitaxial α-quartz films on silicon (100) from the devitrification of porous silica and the control of the film microstructures: we show that by increasing the quantity of devitrifying agent (Sr) it is possible to switch from an α-quartz microstructure consisting of a porous flat film to one dominated by larger, fully dense α-quartz crystals. We also found that the film thickness, relative humidity and the nature of the surfactant play an important role in the control of the microstructure and homogeneity of the films. Via a multi-layer deposition method, we have extended the maximum thickness of the α-quartz films from a few hundreds of nm to the μm range. Moreover, we found a convenient method to combine this multilayer approach with soft lithography to pattern silica films while preserving epitaxial crystallization. This improved control over crystallization and the possibility of preparing patterned films of epitaxial α-quartz on Si substrates pave the path to future developments in applications based on electromechanics, optics and optomechanics.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Light–ferroelectric interaction in two-dimensional lead iodide perovskites

The unique physical properties of two-dimensional (2D) metal halide perovskites (MHPs) such as nonlinear optics, anisotropic charge transport, and ferroelectricity have made these materials promising candidates for multifunctional applications. Recently, fluorine derivatives such as 4,4-difluoropiperidinium lead iodide perovskite or (4,4-DFPD, C 5 H 10 F 2 N) 2 PbI 4 have shown strong ferroelectricity as compared to other 2D MHPs. Although it was previously addressed that the ferroelectricity in MHPs can be affected by illumination, the underlying physical mechanisms of light–ferroelectricity interaction in 2D MHPs are still lacking. Here, we explore the electromechanical responses in 4,4-(DFPD) 2 PbI 4 thin films using advanced scanning probe microscopy techniques revealing ferroelectric domain structures. In this work, hysteretic ferroelectric loops measured by contact-Kelvin probe force microscopy are dependent on domain structures under dark conditions, while ferroelectricity weakens under illumination. The X-ray diffraction patterns exhibit significant changes in preferential orientation of individual lattice planes under illumination. Particularly, the reduced intensity of the (1 1 1) lattice plane under illumination leads to transitioning from a ferroelectric to a paraelectric phase. The instability of positive ions, especially molecular organic cations, is observed under illumination by time-of-flight secondary ion mass spectrometry. The combination of crystallographic orientation and chemical changes under illumination clearly contributes to the origin of light–ferroelectricity interaction in 2D (4,4-DFPD, C 5 H 10 F 2 N) 2 PbI 4 .

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Electrical Properties of Barium and Zirconium Modified NBT Ferroelectric Ceramics

Recently a new wave of interest has risen on relaxor ferroelectrics with complex perovskite structure due to their wide use in fabrication of multilayer ceramic capacitors, electrostrictive actuators, and electromechanical transducers. The polycrystalline 0.93(Bi{sub 0.5}Na{sub 0.5})Ba{sub 0.07}Z{sub 0.04}T{sub 0.96}O{sub 3}(0.07BNBZT) ceramic material, which is in the vicinity of the morphotropic phase boundary (MPB) has been prepared by using high temperature solid state reaction method. The tolerance factor has been estimated and found to be 0.815. XRD analysis revealed a rhombohedral perovskite type structure. SEM micrographs showed highly dense grains with rectangular shape. The average grain size is found to be 1.51{mu}m. Dielectric studies in the material ha indicated relaxor behaviour with diffuse phase transition. High value of {epsilon}{sub m}>1958 is found at 1kHz, Tm (phase transition temperature) 335 deg. C, The diffuseness parameter was established to be 1.60 revealing the relaxor behaviour. Further, to confirm the relaxor behaviour in the material, Vogel-Fulcher (V-F) relation has been used. Estimated V-F parameters are found to be T{sub f} = 138 deg. C, E{sub a} = 0.080 eV and {nu}{sub o} = 2.32x10{sup 8} Hz. Cole-Cole analysis has shown a non-Debye type relaxation in the system. Conductivity studies in the material obeyed the Jonscher's power law in frequency range of (45Hz-5MHz) and temperature range of (35 deg. C - 600 deg. C). The electric conduction in the system may be due to hopping/mobility/ transportation of charge carriers.

36 MATERIALS SCIENCE↗

Synthesis and characterization of lead-free 0.5Ba(Zr{sub 0.2}Ti{sub 0.8})O{sub 3}-0.5(Ba{sub 0.7}Ca{sub 0.3})TiO{sub 3} ceramic

Polycrystalline sample of lead-free 0.5Ba(Zr{sub 0.2}Ti{sub 0.8})O{sub 3}-0.5(Ba{sub 0.7}Ca{sub 0.3})TiO{sub 3} ceramic has been synthesized by solid state reaction method. Single-phase perovskite structure with rhombohedral symmetry was confirmed by x-ray diffraction. Temperature dependent dielectric permittivity studies demonstrated frequency independent behavior, indicating that the studied sample was not a typical relaxor ferroelectric. A polymorphic phase transition between rhombohedral and tetragonal phase was noticed near room temperature followed by a tetragonal to cubic transition with 97 Degree-Sign C as the temperature of maximum permittivity. The macroscopic values of d{sub 33} and d{sub 31} were {approx}350 pC/N and -141 pm/V, whereas the electromechanical coupling factors k{sub p} and k{sub t} were 44.5% and 41.6%, respectively. Bulk P-E hysteresis loop was obtained with saturation polarization 11 {mu}C/cm{sup 2} and coercive field {approx}4 kV/cm. Distinct polarization contrast with a complex mosaic-like domain structure was observed in the out-of-plane mode of piezoresponse force microscopy. The domain width and the correlation length were estimated to be nearly 2 {mu}m and 827 nm, respectively. Local hysteresis loop with apparent coercive voltage, V{sub c} = 15.8 V, was observed.

36 MATERIALS SCIENCE↗

Optomechanical effects of two-level systems in a back-action evading measurement of micro-mechanical motion

We show that the two-level systems (TLS) in lithographic superconducting circuits act as a power-dependent dielectric leading to non-linear responses in a parametrically coupled electromechanical system. Driven TLS shift the microwave resonance frequency and modulate the mechanical resonance through the optical spring effect. By pumping with two tones in a back-action evading measurement, these effects produce a mechanical parametric instability which limits single quadrature imprecision to 1.4 x{sub zp}. The microwave resonator noise is also consistent to a TLS-noise model. These observations suggest design strategies for minimizing TLS effects to improve ground-state cooling and quantum non-demolition measurements of motion.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Converse magnetoelectric coupling in NiFe/Pb(Mg{sub 1/3}Nb{sub 2/3})O{sub 3}–PbTiO{sub 3} nanocomposite thin films grown on Si substrates

Multiferroic NiFe (∼30 nm)/Pb(Mg{sub 1/3}Nb{sub 2/3})O{sub 3}–PbTiO{sub 3}(PMN–PT, ∼220 nm) bilayered thin films were grown on common Pt/Ti/SiO{sub 2}/Si substrates by a combination of off-axis magnetron sputtering and sol-gel spin-coating technique. By using AC-mode magneto-optical Kerr effect technique, the change in the Kerr signal (magnetization) of the NiFe upon applying a low-frequency AC voltage to the PMN–PT film was in situ acquired at zero magnetic field. The obtained Kerr signal versus voltage loop essentially tracks the electromechanical strain curve of the PMN–PT thin film, clearly demonstrating a strain-mediated converse magnetoelectric coupling, i.e., voltage-modulated magnetization, in the NiFe/PMN–PT nanocomposite thin films.

36 MATERIALS SCIENCE↗

Microstructure factor and mechanical and electronic properties of hydrogenated amorphous and nanocrystalline silicon thin-films for microelectromechanical systems applications

Thin-film silicon allows the fabrication of MEMS devices at low processing temperatures, compatible with monolithic integration in advanced electronic circuits, on large-area, low-cost, and flexible substrates. The most relevant thin-film properties for applications as MEMS structural layers are the deposition rate, electrical conductivity, and mechanical stress. In this work, n{sup +}-type doped hydrogenated amorphous and nanocrystalline silicon thin-films were deposited by RF-PECVD, and the influence of the hydrogen dilution in the reactive mixture, the RF-power coupled to the plasma, the substrate temperature, and the deposition pressure on the structural, electrical, and mechanical properties of the films was studied. Three different types of silicon films were identified, corresponding to three internal structures: (i) porous amorphous silicon, deposited at high rates and presenting tensile mechanical stress and low electrical conductivity, (ii) dense amorphous silicon, deposited at intermediate rates and presenting compressive mechanical stress and higher values of electrical conductivity, and (iii) nanocrystalline silicon, deposited at very low rates and presenting the highest compressive mechanical stress and electrical conductivity. These results show the combinations of electromechanical material properties available in silicon thin-films and thus allow the optimized selection of a thin silicon film for a given MEMS application. Four representative silicon thin-films were chosen to be used as structural material of electrostatically actuated MEMS microresonators fabricated by surface micromachining. The effect of the mechanical stress of the structural layer was observed to have a great impact on the device resonance frequency, quality factor, and actuation force.

36 MATERIALS SCIENCE↗

Tailoring dielectric properties of ferroelectric-dielectric multilayers

We develop a nonlinear thermodynamic model for multilayer ferroelectric heterostructures that takes into account electrostatic and electromechanical interactions between layers. We concentrate on the effect of relative layer fractions and in-plane thermal stresses on dielectric properties of Ba{sub 0.6}Sr{sub 0.4}TiO{sub 3}-, BaTiO{sub 3}-, and PbZr{sub 0.2}Ti{sub 0.8}O{sub 3} (PZT)-SrTiO{sub 3} (STO) multilayers on Si and c-sapphire. We show that dielectric properties of such multilayers can be significantly enhanced by tailoring the growth/processing temperature and the STO layer fraction. Our computations show that large tunabilities (∼90% at 400 kV/cm) are possible in carefully designed barium strontium titanate-STO and PZT-STO even on Si for which there exist substantially large in-plane strains.

36 MATERIALS SCIENCE↗

Single-layer graphene on silicon nitride micromembrane resonators

Due to their low mass, high quality factor, and good optical properties, silicon nitride (SiN) micromembrane resonators are widely used in force and mass sensing applications, particularly in optomechanics. The metallization of such membranes would enable an electronic integration with the prospect for exciting new devices, such as optoelectromechanical transducers. Here, we add a single-layer graphene on SiN micromembranes and compare electromechanical coupling and mechanical properties to bare dielectric membranes and to membranes metallized with an aluminium layer. The electrostatic coupling of graphene covered membranes is found to be equal to a perfectly conductive membrane, without significantly adding mass, decreasing the superior mechanical quality factor or affecting the optical properties of pure SiN micromembranes. The concept of graphene-SiN resonators allows a broad range of new experiments both in applied physics and fundamental basic research, e.g., for the mechanical, electrical, or optical characterization of graphene.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Damage detection technique by measuring laser-based mechanical impedance

This study proposes a method for measurement of mechanical impedance using noncontact laser ultrasound. The measurement of mechanical impedance has been of great interest in nondestructive testing (NDT) or structural health monitoring (SHM) since mechanical impedance is sensitive even to small-sized structural defects. Conventional impedance measurements, however, have been based on electromechanical impedance (EMI) using contact-type piezoelectric transducers, which show deteriorated performances induced by the effects of a) Curie temperature limitations, b) electromagnetic interference (EMI), c) bonding layers and etc. This study aims to tackle the limitations of conventional EMI measurement by utilizing laser-based mechanical impedance (LMI) measurement. The LMI response, which is equivalent to a steady-state ultrasound response, is generated by shooting the pulse laser beam to the target structure, and is acquired by measuring the out-of-plane velocity using a laser vibrometer. The formation of the LMI response is observed through the thermo-mechanical finite element analysis. The feasibility of applying the LMI technique for damage detection is experimentally verified using a pipe specimen under high temperature environment.

42 ENGINEERING↗

Multichannel microwave interferometer with an antenna switching system for electron density measurement in a laboratory plasma experiment

This study presents a simple and powerful technique for multichannel measurements of the density profile in laboratory plasmas by microwave interferometry. This technique uses electromechanical microwave switches to temporally switch the connection between multiple receiver antennas and one phase-detection circuit. Using this method, the phase information detected at different positions is rearranged into a time series that can be acquired from a minimum number of data acquisition channels (e.g., two channels in the case of quadrature detection). Our successfully developed multichannel microwave interferometer that uses the antenna switching method was applied to measure the radial electron density profiles in a magnetized plasma experiment. The advantage of the proposed method is its compactness and scalability to multidimensional measurement systems at low cost.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Novel ferroelectric single crystals of Bi(Zn{sub 1/2}Ti{sub 1/2})O{sub 3}-PbZrO{sub 3}-PbTiO{sub 3} ternary solid solution

Ferroelectric single crystals of a new lead-reduced Bi(Zn{sub 1/2}Ti{sub 1/2})O{sub 3}-PbZrO{sub 3}-PbTiO{sub 3} (BZT-PZ-PT) ternary solid solution system have been grown for the first time by three different methods, namely high temperature solution growth (HTSG, or flux method), top-cooled solution growth (TCSG), and top-seeded solution growth (TSSG). The chemical and thermodynamic parameters, including the flux concentration, the soaking temperature and the cooling rate, have been optimized, leading to the growth of good quality BZT-PZ-PT crystals of pseudo-cubic morphology. A large size crystal of the dimensions of 2 × 2 × 0.5 cm{sup 3} has been obtained by the TSSG technique. The crystal structure is analyzed by means of X-ray powder diffraction. The highest ferroelectric Curie temperature T{sub C} of the grown crystals is found to be 320 °C by means of dielectric measurements. A remnant polarization of 32 μC/cm{sup 2} is displayed with a coercive field of 15.4 kV/cm. The high T{sub C} and large coercive field of the BZT-PZ-PT single crystal make this material a promising candidate for applications in high power electromechanical transducers that can operate in a wider temperature range and at high fields.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Effect of growth conditions on microstructure of BiFeO{sub 3}-0.33BaTiO{sub 3} films and performance of bulk acoustic wave resonators

The effect of growth conditions on the microstructure of BiFeO{sub 3}-0.33BaTiO{sub 3} (BF-BT) films and the performance of bulk acoustic wave (BAW) resonators is analyzed using test structures with the BF-BT films grown at different positions relative to the plume axis in the pulsed laser deposition system. The BF-BT film grain size and surface roughness reveal a strong asymmetric surface distribution and decrease significantly in the film region facing the laser beam-plume interaction area. The (100) BF-BT texturing is enhanced in this film region. The variations in the BF-BT film microstructure result in corresponding variations of the BAW resonator performance. Their correlations are established using the model of the roughness induced attenuation of the reflected acoustic waves and theory of the dc field induced piezoelectric effect. The BAW resonators with the highest parameters are obtained in the BF-BT film region facing the laser beam-plume interaction area. The BAW resonators located in this film region reveal a mechanical Q-factor of 200 at 4.2 GHz, an effective electromechanical coupling coefficient of 10% and a tunability of the series resonance frequency of 4.5%.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗