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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 577 records · Page 32
All sourcesNASA NTRSDOE OSTI
NASA NTRS1993

Broadband linearisation of high-efficiency power amplifiers

A feedforward-based amplifier linearization technique is presented which is capable of yielding significant improvements in both linearity and power efficiency over conventional amplifier classes (e.g. class-A or class-AB). Theoretical and practical results are presented showing that class-C stages may be used for both the main and error amplifiers yielding practical efficiencies well in excess of 30 percent, with theoretical efficiencies of much greater than 40 percent being possible. The levels of linearity which may be achieved are required for most satellite systems, however if greater linearity is required, the technique may be used in addition to conventional pre-distortion techniques.

Kenington, Peter B.↗
NASA NTRS1994

High-efficiency, deep-junction, epitaxial InP solar cells on (100) and (111)B InP substrates

We report on the development and performance of deep-junction (approximately 0.25 micron), graded-emitter-doped, n(sup +)-p InP solar cells grown by metallorganic chemical vapor deposition (MOCVD). A novel, diffusion-transport process for obtaining lightly-doped p-type base regions of the solar cell is described. The I-V data and external quantum-efficiency response of these cells are presented. The best active-area AMO efficiency for these deep-junction cells on (100)-oriented InP substrates is 16.8 percent, with a J(sub SC) of 31.8 mA/sq cm, a V(sub OC) of 0.843 V, and a fill-factor of 0.85. By comparison, the best cell efficiency on the (111)B-oriented InP substrates was 15.0 percent. These efficiency values for deep-junction cells are encouraging and compare favorably with performance of thin-emitter (0.03 micron) epitaxial cells as well as that of deep-emitter diffused cells. The cell performance and breakdown voltage characteristics of a batch of 20 cells on each of the orientations are presented, indicating the superior breakdown voltage properties and other characteristics of InP cells on the (111)B orientation. Spectral response, dark I-V data, and photoluminescence (PL) measurements on the InP cells are presented with an analysis on the variation in J(sub SC) and V(sub OC) of the cells. It is observed, under open-circuit conditions, that lower-V(sub OC) cells exhibit higher band-edge PL intensity for both the (100) and (111)B orientations. This anomalous behavior suggests that radiative recombination in the heavily-doped n(sup +)-InP emitter may be detrimental to achieving higher V(sub OC) in n(sup +)-p InP solar cells.

Venkatasubramanian, R.↗
NASA NTRS1995

High efficiency radioisotope thermophotovoltaic prototype generator

A radioisotope thermophotovoltaic generator space power system (RTPV) is lightweight, low-cost alternative to the present radioisotope thermoelectric generator system (RTG). The fabrication of such an RTPV generator has recently become feasible as the result of the invention of the GaSb infrared sensitive photovoltaic cell. Herein, we present the results of a parametric study of emitters and optical filters in conjuction with existing data on gallium antimonide cells. We compare a polished tungsten emitter with an Erbia selective emitter for use in combination with a simple dielectric filter and a gallium antimonide cell array. We find that the polished tungsten emitter is by itself a very selective emitter with low emissivity beyond 4 microns. Given a gallium antimonide cell and a tungsten emitter, a simple dielectric filter can be designed to transmit radiant energy below 1.7 microns and to reflect radiant energy between 1.7 and 4 microns back to the emitter. Because of the low long wavelength emissivity associated with the polished tungsten emitter, this simple dielectric filter then yields very respectable system performance. Also as a result of the longer wavelength fall-off in the tungsten emissivity curve, the radiation energy peak for a polished tungsten emitter operating at 1300 K shifts to shorter wavelengths relative to the blackbody spectrum so that the radiated energy peak falls right at the gallium antimonide cell bandedge. The result is that the response of the gallium antimonide cell is well matched to a polished tungsten emitter. We propose, therefore, to fabricate an operating prototype of a near term radioisotope thermophotovoltaic generator design consisting of a polished tungsten emitter, standard gallium antimonide cells, and a near-term dielectric filter. The Jet Propulsion Laboratory will design and build the thermal cavity, and JX Crystals will fabricate the gallium antimonide cells, dielectric filters, and resultant receiver panels. With 250 Watts of heat input, we expect this prototype to produce over 300 Watts of electrical energy output for a system energy conversion efficiency of over 12%. This low risk, near term design provides advances relative to present radioisotope thermophotovoltaic generators and has the additional advantage of allowing component and system development and testing to begin immediately. Improved cells and filters can easily be incorporated in this baseline system if they should become available in the future.

Avery, James E.↗
NASA NTRS1995

High efficient radiation stable AlGaAs/GaAs solar cells with internal Bragg reflector

An investigation of solar cells based on AlGaAs/GaAs heterostructures with an internal Bragg reflector as the back-surface reflector is presented. The Bragg reflector is grown by low pressure metalorganic chemical vapor deposition on n-GaAs substrates in a horizontal resistively heated reactor. The Bragg reflector with its maximum reflectance centered at a wavelength of 860 nm consists of 12 pairs of AlAs/GaAs layers. The resulting Bragg reflector has a thickness of 0.072 micrometers for AlAs and 0.059 micrometers for GaAs. The multi-layered quasi-dielectric stack selectively reflects weakly absorbed photons with energies near to the GaAs band gap for a second pass through the photoactive region, thus increasing the photocurrent. The use of the Bragg reflector allows the external quantum efficiency to be increased in the long wavelength of the spectrum. The use of the Bragg reflector and an antireflective coating and prismatic cover allowed an efficiency of 23.4 percent to be obtained.

Andreev, V. M.↗
NASA NTRS1996

Highly Efficient Molecular Adsorbers

Molecular adsorbers developed to reduce contamination of sensitive optoelectronic components inside housings of scientific instruments. Contaminants stick to surfaces of these devices. Needed in situations in which simply venting contaminants to environment not an option because environment even more contaminating. Useful for variety of purposes in addition to suppressing contamination. Used as collection devices for sensitive total-mass-loss measurements on specimens of materials exhibiting low outgassing or as passive witness plates for collection of contaminants to be analyzed subsequently. Temperature-differential desorption from adsorbers used for preliminary separation of chemical species prior to mass spectroscopy or as alternative to gas chromatography/mass spectroscopy.

Voecks, Gerald E.↗
NASA NTRS2001

Fabrication of Very High Efficiency 5.8 GHz Power Amplifiers using AlGaN HFETs on SiC Substrates for Wireless Power Transmission

For wireless power transmission using microwave energy, very efficient conversion of the DC power into microwave power is extremely important. Class E amplifiers have the attractive feature that they can, in theory, be 100% efficient at converting, DC power to RF power. Aluminum gallium nitride (AlGaN) semiconductor material has many advantageous properties, relative to silicon (Si), gallium arsenide (GaAs), and silicon carbide (SiC), such as a much larger bandgap, and the ability to form AlGaN/GaN heterojunctions. The large bandgap of AlGaN also allows for device operation at higher temperatures than could be tolerated by a smaller bandgap transistor. This could reduce the cooling requirements. While it is unlikely that the AlGaN transistors in a 5.8 GHz class E amplifier can operate efficiently at temperatures in excess of 300 or 400 C, AlGaN based amplifiers could operate at temperatures that are higher than a GaAs or Si based amplifier could tolerate. Under this program, AlGaN microwave power HFETs have been fabricated and characterized. Hybrid class E amplifiers were designed and modeled. Unfortunately, within the time frame of this program, good quality HFETs were not available from either the RSC laboratories or commercially, and so the class E amplifiers were not constructed.

Sullivan, Gerry↗
NASA NTRS2000

A Novel High Efficient Laser Transmitter Design for a Space-borne Ozone Differential Lidar (DIAL)

Development of a UV laser transmitter capable of operating from a space platform is a critical step in enabling global earth observations of aerosols and ozone at resolutions greater than current passive instrument capabilities. Tropospheric chemistry is well recognized as the next frontier for global atmospheric measurement. NASA Langley Research Center (LaRC) and the Canadian Space Agency (CSA) have jointly studied the requirements for a satellite based, global ozone monitoring instrument. The study, called Ozone Research using Advanced Cooperative Lidar Experiment (ORACLE) has defined the Differential Absorption Lidar (DIAL) instrument performance, weight and power, and configuration requirements for a space based measurement. In order to achieve the measurement resolution and acceptable signal-to-noise from lidar returns, 500mJ/pulse (5 Watts average power) is required at both 305-308nm and 315-320nm wavelengths. These are consecutive pulses, in a 10 Hz, double-pulsed format. The two wavelengths are used as the on- and off-lines for the ozone DIAL measurement. NASA Langley is currently developing technology for a UV laser transmitter capable of meeting the ORACLE requirements. Experimental efforts to date have shown that the UV generation scheme is viable, and that energies greater than l00mJ/pulse are possible. In this paper, we will briefly discuss the down select process for the proposed laser design, the study effort to date and the laser system design, including both primary and alternate approaches. We will describe UV laser technology that minimizes the total number of optical components (for enhanced reliability) as well as the number of UV coated optics required to transmit the light from the laser (for enhanced optical damage resistance). While the goal is to develop a laser that will produce 500 mJ of energy, we will describe an optional design that will produce output energies between 100 - 200 mJ/unit and techniques for combining multiple laser modules in order to transmit a minimum of 500mJ of UV energy in each pulse of the on- and off-line pulse pairs. This modular laser approach provides redundancy and significantly reduces development time, risk and cost when compared to the development of a single, 500mJ double-pulsed laser subsystem. Finally, we will summarize the laser development effort to date, including results that include the highest known UV energy ( 130 mJ at 320nm) ever produced by a solid-state laser operating in this wavelength region.

Edwards, W. C.↗
NASA NTRS2002

Novel High Efficient Organic Photovoltaic Materials: Appendix for Summary of Research

There are many different kinds of conjugated polymers that may be useful in photovoltaic devices. So far, the most popular and successful conjugated polymers used in photovoltaic devices include poly(1,4-)phenylenevinylenes (PPV), C60 and their derivatives. The discovery of electro-luminescence in PPV has stimulated a great deal of interest in developing "plastic" solid-state semiconductor devices. The overall synthetic methodology for the preparation of PPV can be divided into three main categories: (1) side chain derivatization, (2) precursor approach, and (3) in-situ polymerization. In this project, the first method was adopted. As discussed in project proposal and literatures, the overall efficiency of photovoltaic devices containing conjugated polymers is determined by the materials ability to generate excitons from incoming radiation, and then to separate the charges at donor/acceptor interfaces, and then to transport charges to respective electrodes. Given that effective exciton diffusion range are typical less then 30 nm, unique morphological structures are needed. This need led to several research groups to the idea that interpenetrating or bi-continuous networks of donor (electron donating) and acceptor (electron withdrawing) polymers should give better results. One approach involved the use of functionalized PPV. The attachment of electron withdrawing cyano groups to a PPV forms the CN-PPV, making it a strong electron acceptor. Underivatized PPV is a generally considered a hole-transporting material. Using blends of MEH-PPV, a soluble donor PPV derivative, as a hole transporter and CN-PPV as an electron transporter, a quantum efficiencies of up to 6% was achieved.

Sun, Sam↗
NASA NTRS2003

Progress in GaAs Metamorphic HEMT Technology for Microwave Applications. High Efficiency Ka-Band MHEMT Power MMICs

This paper reviews recent progress in the development of GaAs metamorphic HEMT (MHEMT) technology for microwave applications. Commercialization has begun, while efforts to further improve performance, manufacturability and reliability continue. We also report the first multi-watt MHEMT MMIC power amplifiers, demonstrating up to 3.2W output power and record power-added efficiency (PAE) at Ka-band.

Smith, P. M.↗
NASA NTRS2004

Channel Temperature Model for Microwave AlGaN/GaN HEMTs on SiC and Sapphire MMICs in High Power, High Efficiency SSPAs

A key parameter in the design trade-offs made during AlGaN/GaN HEMTs development for microwave power amplifiers is the channel temperature. An accurate determination can, in general, only be found using detailed software; however, a quick estimate is always helpful, as it speeds up the design cycle. This paper gives a simple technique to estimate the channel temperature of a generic microwave AlGaN/GaN HEMT on SiC or Sapphire, while incorporating the temperature dependence of the thermal conductivity. The procedure is validated by comparing its predictions with the experimentally measured temperatures in microwave devices presented in three recently published articles. The model predicts the temperature to within 5 to 10 percent of the true average channel temperature. The calculation strategy is extended to determine device temperature in power combining MMICs for solid-state power amplifiers (SSPAs).

Freeman, Jon C.↗
NASA NTRS2004

High Efficiency Thermoelectric Radioisotope Power Systems

The work performed and whose results presented in this report is a joint effort between the University of New Mexico s Institute for Space and Nuclear Power Studies (ISNPS) and the Jet Propulsion Laboratory (JPL), California Institute of Technology. In addition to the development, design, and fabrication of skutterudites and skutterudites-based segmented unicouples this effort included conducting performance tests of these unicouples for hundreds of hours to verify theoretical predictions of the conversion efficiency. The performance predictions of these unicouples are obtained using 1-D and 3-D models developed for that purpose and for estimating the actual performance and side heat losses in the tests conducted at ISNPS. In addition to the performance tests, the development of the 1-D and 3-D models and the development of Advanced Radioisotope Power systems for Beginning-Of-Life (BOM) power of 108 We are carried out at ISNPS. The materials synthesis and fabrication of the unicouples are carried out at JPL. The research conducted at ISNPS is documented in chapters 2-5 and that conducted at JP, in documented in chapter 5. An important consideration in the design and optimization of segmented thermoelectric unicouples (STUs) is determining the relative lengths, cross-section areas, and the interfacial temperatures of the segments of the different materials in the n- and p-legs. These variables are determined using a genetic algorithm (GA) in conjunction with one-dimensional analytical model of STUs that is developed in chapter 2. Results indicated that when optimized for maximum conversion efficiency, the interfacial temperatures between various segments in a STU are close to those at the intersections of the Figure-Of-Merit (FOM), ZT, curves of the thermoelectric materials of the adjacent segments. When optimizing the STUs for maximum electrical power density, however, the interfacial temperatures are different from those at the intersections of the ZT curves, but close to those at the intersections the characteristic power, CP, curves of the thermoelectric materials of the adjacent segments (CP = T(sup 2)Zk and has a unit of W/m). Results also showed that the number of the segments in the n- and p-legs of the STUs optimized for maximum power density are generally fewer than when the same unicouples are optimized for maximum efficiency. These results are obtained using the 1-D optimization model of STUs that is detailed in chapter 2. A three-dimensional model of STUs is developed and incorporated into the ANSYS commercial software (chapter 3). The governing equations are solved, subject to the prescribed

El-Genk, Mohamed↗
NASA NTRS2004

Very High Efficiency, Miniaturized, Long-Lived Alpha Particle Power Source Using Diamond Devices for Extreme Space Environments

A power source that converts a-particle energy into electricity by coulomb collision in doped diamond films is described. Alpha particle decay from curium-244 creates electron-hole pairs by free- ing electrons and holes inside the crystal lattice in N- and P-doped diamond films. Ohmic contacts provide electrical connection to an electronic device. Due to the built-in electric field at the rectifying junction across the hT- and P-doped diamond films, the free electrons are constrained to traveling in generally one direction. This one direction then supplies electrons in a manner similar to that of a battery. The radioactive curium layer may be disposed on diamond films for even distribution of a-particle radiation. The resulting power source may be mounted on a diamond substrate that serves to insulate structures below the diamond substrate from a-particle emission. Additional insulation or isolation may be provided in order to prevent damage from a-particle collision. N-doped silicon may be used instead of N-doped diamond.

Elizabeth A Kolawa↗
NASA NTRS1999

High-efficiency Agrobacterium-mediated transformation of Norway spruce (Picea abies) and loblolly pine (Pinus taeda)

Agrobacterium-mediated gene transfer is the method of choice for many plant biotechnology laboratories; however, large-scale use of this organism in conifer transformation has been limited by difficult propagation of explant material, selection efficiencies and low transformation frequency. We have analyzed co-cultivation conditions and different disarmed strains of Agrobacterium to improve transformation. Additional copies of virulence genes were added to three common disarmed strains. These extra virulence genes included either a constitutively active virG or extra copies of virG and virB, both from pTiBo542. In experiments with Norway spruce, we increased transformation efficiencies 1000-fold from initial experiments where little or no transient expression was detected. Over 100 transformed lines expressing the marker gene beta-glucuronidase (GUS) were generated from rapidly dividing embryogenic suspension-cultured cells co-cultivated with Agrobacterium. GUS activity was used to monitor transient expression and to further test lines selected on kanamycin-containing medium. In loblolly pine, transient expression increased 10-fold utilizing modified Agrobacterium strains. Agrobacterium-mediated gene transfer is a useful technique for large-scale generation of transgenic Norway spruce and may prove useful for other conifer species.

NASA Discipline Plant Biology↗
NASA NTRS2001

High-Efficiency Wide-Band Suspended Patch Antenna Array Demonstrated

A four-element, suspended patch antenna array that has a parasitic patch layer on top and is electromagnetically coupled to an inverted microstrip feed for linear polarization was demonstrated at K-band frequencies. The layout of the array is shown in the following figure. The antenna has the following advantages over conventional microstrip antennas: 1. The inverted microstrip has lower losses, which result in higher gain and efficiency. 2. The inverted microstrip is easier to fabricate, because the strip width is wider for a given characteristic impedance. 3. A conventional proximity-coupled patch antenna requires a substrate for the feed and a superstrate for the patch. However, the inverted microstrip-fed patch antenna makes use of a single substrate and, hence, is lightweight and inexpensive. 4. Electromagnetic coupling results in a wider bandwidth.

Simons, Rainee N.↗