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DOE OSTI2015

Elimination of carbon vacancies in 4H-SiC employing thermodynamic equilibrium conditions at moderate temperatures

The carbon vacancy (V{sub C}) is a major point defect in high-purity 4H-SiC epitaxial layers limiting the minority charge carrier lifetime. In layers grown by chemical vapor deposition techniques, the V{sub C} concentration is typically in the range of 10{sup 12 }cm{sup −3}, and after device processing at temperatures approaching 2000 °C, it can be enhanced by several orders of magnitude. In the present study, both as-grown layers and a high-temperature processed one have been annealed at 1500 °C and the V{sub C} concentration is demonstrated to be strongly reduced, exhibiting a value of only a few times 10{sup 11 }cm{sup −3} as determined by deep-level transient spectroscopy measurements. The value is reached already after annealing times on the order of 1 h and is evidenced to reflect thermodynamic equilibrium under C-rich ambient conditions. The physical processes controlling the kinetics for establishment of the V{sub C} equilibrium are estimated to have an activation energy below ∼3 eV and both in-diffusion of carbon interstitials and out-diffusion of V{sub C}'s are discussed as candidates. This concept of V{sub C} elimination is flexible and readily integrated in a materials and device processing sequence.

36 MATERIALS SCIENCE↗

DOE OSTI2016

Synaptic devices based on purely electronic memristors

Memristive devices have been widely employed to emulate biological synaptic behavior. In these cases, the memristive switching generally originates from electrical field induced ion migration or Joule heating induced phase change. In this letter, the Ti/ZnO/Pt structure was found to show memristive switching ascribed to a carrier trapping/detrapping of the trap sites (e.g., oxygen vacancies or zinc interstitials) in ZnO. The carrier trapping/detrapping level can be controllably adjusted by regulating the current compliance level or voltage amplitude. Multi-level conductance states can, therefore, be realized in such memristive device. The spike-timing-dependent plasticity, an important Hebbian learning rule, has been implemented in this type of synaptic device. Compared with filamentary-type memristive devices, purely electronic memristors have potential to reduce their energy consumption and work more stably and reliably, since no structural distortion occurs.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2016

Microstructure and oxidation behavior of high strength steel AISI 410 implanted with nitrogen ion

Surface treatment by implantation with nitrogen-ion was performed on the commercial feritic high strength steel AISI 410 which is termed for high temperature applications. The aim of this research was focused on the surface modification to improve its high temperature oxidation property in the early stages. Ion implantation was carried out at acceleration energy of 100 KeV and ion current 10 mA for 30, 60 and 90 minutes. The samples were subjected to the high temperature oxidation test by means of thermogravimetry in a magnetic suspension balance (MSB) at 500 °C for 5 hours. The scanning electron microscopy (SEM), X-ray diffraction spectrometry (XRD) and Vickers Hardness measurement were used for sample characterization. The formation of ferro-nitride phase after implantation did not occur, however a thin layer considered to contain nitrogen interstitials was detected. The oxidation of both samples before and after implantation followed parabolic kinetics indicating inward growth of oxide scale characteristically due to diffusion of oxygen anions towards matrix surface. After oxidation test relativelly stable oxide scales were observed. Oxidation rates decreased proportionally with the increasing of implantation time due to the formation of oxide layer which is considered to be effectiv inhibitor for the oxygen diffusion.

36 MATERIALS SCIENCE↗

DOE OSTI2016

Room temperature ammonia and VOC sensing properties of CuO nanorods

Here, we report a NH{sub 3} and Volatile Organic Compounds (VOCs) sensing prototype of CuO nanorods with peculiar sensing characteristics at room temperature. High quality polycrystalline nanorods were synthesized by a low temperature hydrothermal method. The rods are well oriented with an aspect ratio of 5.71. Luminescence spectrum of CuO nanorods exhibited a strong UV-emission around 415 nm (2.98 eV) which arises from the electron-hole recombination phenomenon. The absence of further deep level emissions establishes the lack of defects such as oxygen vacancies and Cu interstitials. At room temperature, the sensor response was recorded over a range of gas concentrations from 100-600 ppm of ammonia, ethanol and methanol. The sensor response showed power law dependence with the gas concentration. This low temperature sensing can be validated by the lower value of calculated activation energy of 1.65 eV observed from the temperature dependent conductivity measurement.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

DOE OSTI2016

Defects and properties of cadmium oxide based transparent conductors

Transparent conductors play an increasingly important role in a number of semiconductor technologies. This paper reports on the defects and properties of Cadmium Oxide, a transparent conducting oxide which can be potentially used for full spectrum photovoltaics. We carried out a systematic investigation on the effects of defects in CdO thin films undoped and intentionally doped with In and Ga under different deposition and annealing conditions. We found that at low growth temperatures (<200 °C), sputter deposition tends to trap both oxygen vacancies and compensating defects in the CdO film resulting in materials with high electron concentration of ∼2 × 10{sup 20}/cm{sup 3} and mobility in the range of 40–100 cm{sup 2}/V s. Thermal annealing experiments in different ambients revealed that the dominating defects in sputtered CdO films are oxygen vacancies. Oxygen rich CdO films grown by sputtering with increasing O{sub 2} partial pressure in the sputter gas mixture results in films with resistivity from ∼4 × 10{sup −4} to >1 Ω cm due to incorporation of excess O in the form of O-related acceptor defects, likely to be O interstitials. Intentional doping with In and Ga donors leads to an increase of both the electron concentration and the mobility. With proper doping CdO films with electron concentration of more than 10{sup 21 }cm{sup −3} and electron mobility higher than 120 cm{sup 2}/V s can be achieved. Thermal annealing of doped CdO films in N{sub 2} ambient can further improve the electrical properties by removing native acceptors and improving film crystallinity. Furthermore, the unique doping behavior and electrical properties of CdO were explored via simulations based on the amphoteric defect model. A comparison of the calculations and experimental results show that the formation energy of native donors and acceptors at the Fermi stabilization energy is ∼1 eV and that the mobility of sputtered deposited CdO is limited by a background acceptor concentration of ∼5–6 × 10{sup 20}/cm{sup 3}. The calculations offer an insight into understanding of the effects of defects on electrical properties of undoped and doped CdO and offer a potential to use similar methods to analyze doping and defect properties of other semiconductor materials.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2016

Silver migration and trapping in ion implanted ZnO single crystals

Potentially, group-Ib elements (Cu, Ag, and Au) incorporated on Zn sites can be used for p-type doping of ZnO, and in the present paper, we use ion implantation to introduce Ag atoms in wurtzite ZnO single crystals. Monitoring the Li behavior, being a residual impurity in the crystals, as a tracer, we demonstrate that Zn interstitials assist the Ag diffusion and lead to Ag pile-up behind the implanted region after annealing above 800 °C. At even higher temperatures, a pronounced Ag loss from the sample surface occurs and concurrently the Ag atoms exhibit a trap-limited diffusion into the crystal bulk with an activation energy of ∼2.6 eV. The dominant traps are most likely Zn vacancies and substitutional Li atoms, yielding substitutional Ag atoms. In addition, formation of an anomalous multipeak Ag distribution in the implanted near-surface region after annealing can be attributed to local implantation-induced stoichiometry disturbances leading to trapping of the Ag atoms by O and Zn vacancies in the vicinity of the surface and in the end-of-range region, respectively.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2016

Origin and annealing of deep-level defects in GaNAs grown by metalorganic vapor phase epitaxy

Deep-level defects were investigated by deep level transient spectroscopy on the as-grown and annealed GaNAs layers of various nitrogen (N) contents. The unintentionally doped (uid) GaNAs layers were grown by metalorganic vapor phase epitaxy with N = 1.4%, 2.0%, 2.2%, and 2.4% on GaAs substrate. The possible origin and evolution of the deep-level defects upon annealing were analyzed with the use of the GaNAs band gap diagram concept [Kudrawiec et al., Appl. Phys. Lett. 101, 082109 (2012)], which assumes that the activation energy of donor traps decreases with N-related downward shift of the conduction band. On the basis of this diagram and in comparison with previous results, the N-related traps were associated with (N−As){sub As} or (N−N){sub As} split interstitials. It was also proposed that one of the electron traps and the hole trap, lying at the same level position in the bandgap of the annealed uid-GaNAs layers, can both act as one generation-recombination center partially responsible for poor optical properties of this alloy.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2016

Influences of defects evolvement on the properties of sputtering deposited ZnO:Al films upon hydrogen annealing

Understanding how the defects interact with each other and affect the properties of ZnO:Al films is very important for improving their performance as a transparent conductive oxide (TCO). In the present work, we studied the effects of hydrogen annealing on the structural, optical and electrical properties of ZnO:Al films prepared by magnetron sputtering. High resolution transmission electron microscopy observations reveal that annealing at ∼300 {sup o}C induces the formation of partial dislocations (PD) and stacking faults (SF), which disrupt the lattice periodicity leading to decreased grain size. Annealing at temperatures above ∼500 {sup o}C can remove the PD and SF, but large number of zinc vacancies will be generated. Our results show that when films are annealed at ∼500 {sup o}C, the oxygen-related defects (interstitials O{sub i}, etc.) in the as-grown films can be remarkably removed or converted, which lead to increments in the carrier concentration, mobility, and the transmittance in the visible range. At annealing temperatures above 550 {sup o}C, the hydrogen etching effect becomes predominant, and Al donors are deactivated by zinc vacancies. We also find an abnormal endothermic process by thermal analysis and an abnormal increase in the resistivity during heating the sample under hydrogen atmosphere, based on which the interaction of O{sub i} with the defects (mainly Al donors and PD) is discussed. It is also demonstrated that by annealing the as-grown AZO films at ∼500 {sup o}C under hydrogen atmosphere, high performance TCO films with a low resistivity of 4.48 × 10{sup −4} Ωcm and high transmittance of above 90% in the visible light are obtained.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2017

Hydrodynamic effects in laser cutting of biological tissue phantoms

We study the thermal and transport processes that occur in the course of incision formation at the surface of a biological tissue phantom under the action of near-IR, moderate-power, continuous-wave laser radiation (λ = 1.94 μm) delivered by means of an optical fibre with an absorbing coating on its exit face. It is shown that in addition to the thermal effect, the laser-induced hydrodynamic effects caused by the explosive boiling of the interstitial water make a large contribution to the phantom destruction mechanism. These effects lead to the tissue rupture accompanied by the ejection of part of the fragmented substance from the site of laser impact and the formation of highly porous structure near the incision surface. We have found that the depth, the width and the relief of the laser incision wall in the case of using the optical fibre moving with a constant velocity, depend on the fibre tilt angle with respect to the phantom surface, as well as the direction of the fibre motion. (laser medicine)

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

DOE OSTI2024

Role of chalcogen vacancies and hydrogen in the optical and electrical properties of bulk transition-metal dichalcogenides

Abstract Like in any other semiconductor, point defects in transition-metal dichalcogenides (TMDs) are expected to strongly impact their electronic and optical properties. However, identifying defects in these layered two-dimensional materials has been quite challenging with controversial conclusions despite the extensive literature in the past decade. Using first-principles calculations, we revisit the role of chalcogen vacancies and hydrogen impurity in bulk TMDs, reporting formation energies and thermodynamic and optical transition levels. We show that the S vacancy can explain recently observed cathodoluminescence spectra of MoS 2 flakes and predict similar optical levels in the other TMDs. In the case of the H impurity, we find it more stable sitting on an interstitial site in the Mo plane, acting as a shallow donor, and possibly explaining the often observed n-type conductivity in some TMDs. We also predict the frequencies of the local vibration modes for the H impurity, aiding its identification through Raman or infrared spectroscopy.

36 MATERIALS SCIENCE↗

DOE OSTI2021

Crystal structures and formation mechanisms of boron-rich tungsten borides

Boron-rich tungsten borides tend to adopt mechanically unfavorable layered structures but experimentally exhibit excellent mechanical properties rivalling traditional superhard solids. Unravelling the contraindicated structure-property relationship, however, has been impeded by their structural ambiguities because of the difficulty in probing boron and atomic deficiency of these borides. Here, we study crystal structures of boron-rich tungsten borides WB 3+x and WB 2+x by neutron diffraction based on high-quality samples prepared by a high-pressure method, leading to definitive structural resolutions for both borides with unique compositions of WB 5.14 and WB 2.34 . Combined with theoretical calculations, their structural stability is revealed to be closely related to atomic deficiency, which is governed by the valence-band filling with an optimal valence-electron concentration of ~10 per cell. The presence of interstitial boron trimers at the vacant W : 2b sites in WB 5.14 alters the crystal symmetry, making the Wyckoff 2d site more favorably occupied by W, rather than the 2c site, as previously misassigned. Here, the staggered planar boron layers and wrinkled boron bonding in WB 2.34 are identified to be crucial for stabilizing its structure. These findings unveil the longstanding structural mysteries of boron-rich tungsten borides and offer powerful insights for rational design of borides by defect chemistry.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2020

Primary intrinsic defects and their charge transition levels in β–Ga 2 O 3

A steady-state photocapacitance (SSPC) setup directly connected to the beamline of a MeV ion implanter is utilized to study primary intrinsic defects in β – Ga 2 O 3 generated by He implantation at cryogenic temperatures (120 K). At low temperatures, the migration of defects is suppressed, and hence the generation of primary intrinsic defects is expected to prevail. SSPC measurements reveal defect-related optical transitions in halide vapor-phase epitaxy (HVPE) -grown β – Ga 2 O 3 thin films with onset energies at 1.3 ( T 1 ) , 1.7 ( T 2 ) , 1.9 ( T 3 ) , 2.6 ( T 4 ) , 3.7 ( T 5 ) , and 4.2 eV ( T 6 ) . T 2 , T 4 , T 5 , and T 6 were observed in as-received HVPE-grown β – Ga 2 O 3 thin films, whereby T 2 is only sporadically observed. The introduction rates for T 3 , T 4 , as well as T 6 indicate an origin related to primary intrinsic defects. Notably, T 1 and T 3 are only observed after He implantation at cryogenic temperatures. Hybrid-functional calculations were performed to estimate the optical absorption cross-section spectra for the gallium ( Ga i ) and oxygen ( O i ) interstitials as well as the corresponding vacancies ( V Ga and V O , respectively), and compared with the measured onsets for optical absorption found by SSPC measurements. Indeed, we propose T 3 to be associated with Ga i ( + / + 2 ) and/or V GaI ( - 3 / - 2 ) , while T 4 is suggested to be related to V O K ( 0 / + ) ( K = I , II , III ) and/or V GaII ( - 3 / - 2 ) . Additionally, several further charge-state transition levels associated with V GaI and V GaII may contribute to T 4 and T 6 . We further studied the kinetics of the defects created with He implantation by exposing the sample to room temperature. The kinetics observed for T 3 and T 4 further support the proposed assignments of the corresponding defect signatures.

36 MATERIALS SCIENCE↗

DOE OSTI2025

Temperature dependence of vacancy/self-interstitial recombination volumes in copper

We use molecular dynamics to calculate rate coefficients for recombination of vacancies with self-interstitial atoms (SIAs) in Cu at temperatures from 300 to 700 K. From these results, we calculate vacancy/SIA recombination volumes and find that they decrease from around 290 (where is one atomic volume) at 300 K to 160 at 500 K and above. By counting the number of distinct pathways by which a stable SIA may migrate to a site of spontaneous recombination with a nearby vacancy, we find a lower bound estimate of 168 for the recombination volume. We furthermore rationalize its temperature dependence based on differences between the activation energies for recombination and SIA migration. Furthermore, our work sheds light on the fundamental nature of the recombination volume and provides information that may be incorporated into multiscale models of radiation response in solids.

36 MATERIALS SCIENCE↗

DOE OSTI2016

SU-F-T-47: MRI T2 Exclusive Based Planning Using the Endocavitary/interstitial Gynecological Benidorm Applicator: A Proposed TPS Library and Preplan Efficient Methodology

Purpose: ABS and GEC-ESTRO have recommended MRI T2 for image guided brachytherapy. Recently, a new applicator (Benidorm Template, TB) has been developed in our Department (Rodriguez et al 2015). TB is fully MRI compatible because the Titanium needles and it allows the use of intrauterine tandem. Currently, TPS applicators library are not currently available for non-rigid applicators in case of interstitial component as the TB.The purpose of this work is to present the development of a library for the TB, together with its use on a pre-planning technique. Both new goals allow a very efficient and exclusive T2 MRI based planning clinical TB implementation. Methods: The developed library has been implemented in Oncentra Brachytherapy TPS, version 4.3.0 (Elekta) and now is being implemented on Sagiplan v 2.0 TPS (Eckert&Ziegler BEBIG). To model the TB, free and open software named FreeCAD and MeshLab have been used. The reconstruction process is based on three inserted A-vitamin pellets together with the data provided by the free length. The implemented preplanning procedure is as follow: 1) A MRI T2 acquisition is performed with the template in place just with the vaginal cylinder (no uterine tube nor needles). 2) The CTV is drawn and the required needles are selected using a developed Java based application and 3) A post-implant MRI T2 is performed. Results: This library procedure has been successfully applied by now in 25 patients. In this work the use of the developed library will be illustrated with clinical examples. The preplanning procedure has been applied by now in 6 patients, having significant advantages: needle depth estimation, needle positions and number are optimized a priori, time saving, etc Conclusion: TB library and pre-plan techniques are feasible and very efficient and their use will be illustrated in this work.

60 APPLIED LIFE SCIENCES↗

DOE OSTI2018

Optical Spectra of Gamma-Irradiated LiF Crystals with Anisotropic Lithium Nanoparticles

The optical response of Li anisotropic defects and nanoparticles from three faces of cubic LiF crystals with 10-mm edges to γ radiation from a {sup 60}Со source with doses of 10{sup 5}–10{sup 9} R at 320 K in air is studied. After a maximum dose of 10{sup 9} R, scanning electron microscopy revealed submicron metal lithium flakes ordered into long parallel nanofilaments. The resonance absorption band, which shifts from 272 to 295 nm with increasing dose, is assigned to lithium nanocolloids in the (110) plane. The band at 202–225 nm observed only from the (100) face narrows at doses below 10{sup 5} R and is assigned to diatomic fluorine molecules in interstitial sites. The appearance of the 209–212–215-nm triplets at 2.7 × 10{sup 5} R from the (100) plane and the 211–213–215-nm triplets at 0.9 × 10{sup 5} R from the (010) plane is related to radiation-induced axially symmetric bipolarons with a high oscillator strength. The splitting of the 445-nm band into a 438–445–450-nm triplet is observed only for the (010) plane after a dose of 10{sup 6} R and is related to surface plasmon polaritons (longitudinal and transverse) of elongated Li nanoparticles. The (F{sub 2}–F{sub 3}) complexes are oriented in the most imperfect (111) plane and are seen along three cubic axes.

77 NANOSCIENCE AND NANOTECHNOLOGY↗

DOE OSTI2019

XAFS Spectroscopy Study of Microstructure and Electronic Structure of Heterosystems Containing Si/GeMn Quantum Dots

Using X-ray absorption near edge structure spectroscopy, extended X-ray absorption fine structure spectroscopy, atomic force microscopy, and Rutherford backscattering spectroscopy, the features of the microstructure and elemental composition of Si/GeMn magnetic systems obtained by molecular beam epitaxy and containing quantum dots are studied. Intense mixing of Ge and Si atoms is found in all samples. The degree of mixing (diffusion) correlates with the conditions of synthesis of Si/GeMn samples. For these systems, direct contacts of germanium atoms with manganese atoms are characterized and the presence of interstitial manganese with tetrahedral coordination and substitution of manganese for germanium and silicon in the lattice sites is found. The presence of stoichiometric phases Ge{sub 8}Mn{sub 11}, Ge{sub 3}Mn{sub 5} is not detected. The correlations of the Ge, Si, and Mn coordination numbers in the Ge environment are determined both with the Mn flux value (evaporator temperature) and with the temperature at which quantum dots are grown, as well as with other synthesis conditions. The manganese concentration in the samples is determined.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2016

Hydrogen diffusion in the elastic fields of dislocations in iron

The effect of dislocation stress fields on the sink efficiency thereof is studied for hydrogen interstitial atoms at temperatures of 293 and 600 K and at a dislocation density of 3 × 10{sup 14} m{sup –2} in bcc iron crystal. Rectilinear full screw and edge dislocations in basic slip systems 〈111〉(110), 〈111〉(112), 〈100〉(100), and 〈100〉(110) are considered. Diffusion of defects is simulated by means of the object kinetic Monte Carlo method. The energy of interaction between defects and dislocations is calculated using the anisotropic theory of elasticity. The elastic fields of dislocations result in a less than 25% change of the sink efficiency as compared to the noninteracting linear sink efficiency at a room temperature. The elastic fields of edge dislocations increase the dislocation sink efficiency, whereas the elastic fields of screw dislocations either decrease this parameter (in the case of dislocations with the Burgers vector being 1/2〈111〉) or do not affect it (in the case of dislocations with the Burgers vector being 〈100〉). At temperatures above 600 K, the dislocations affect the behavior of hydrogen in bcc iron mainly owing to a high binding energy between the hydrogen atom and dislocation cores.

74 ATOMIC AND MOLECULAR PHYSICS↗

DOE OSTI2016

Method and apparatus for studying high-temperature properties of conductive materials in the interests of nuclear power engineering

Physical processes during a rapid (microsecond) heating of metals, carbon, and their compounds by a single pulse of electric current are discussed. Effects arising in such short-term heating near the melting point are noted: the electron emission and heat capacity anomalies and the possible occurrence of Frenkel pair (interstitial atom and vacancy). The problem of measuring the temperature using optical methods under pulse heating is considered, including the use of a specimen in the form of a blackbody model. The melting temperature of carbon (4800–4900 K) is measured at increased pulse pressure. The results of studying the properties of metals (by example of zirconium and hafnium) and of zirconium carbide at high temperatures are discussed. The schematics of the pulse setups and the instrumentation, as well as specimens for a pulse experiment, are presented.

36 MATERIALS SCIENCE↗