Spectroscopic investigation of nitrogen-functionalized carbon materials: Spectroscopic investigation of nitrogen-functionalized carbon
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Wood, Kevin N.↗
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CMOS-compatible method for doping of buried vertical polysilicon structures by solid phase diffusion
Polysilicon receives attention nowadays as a means to incorporate 3D-structured photonic devices into silicon processes. However, doping of buried layers of a typical 3D structure has been a challenge. We present a method for doping of buried polysilicon layers by solid phase diffusion. Using an underlying silicon oxide layer as a dopant source facilitates diffusion of dopants into the bottom side of the polysilicon layer. The polysilicon is grown on top of the oxide layer, after the latter has been doped by ion implantation. Post-growth heat treatment drives in the dopant from the oxide into the polysilicon. To model the process, we studied the diffusion of the two most common silicon dopants, boron (B) and phosphorus (P), using secondary ion mass spectroscopy profiles. Our results show that shallow concentration profiles can be achieved in a buried polysilicon layer using the proposed technique. We present a quantitative 3D model for the diffusion of B and P in polysilicon, which turns the proposed method into an engineerable technique.
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
Development of a large area space solar cell assembly
The development of a large area high efficiency solar cell assembly is described. The assembly consists of an ion implanted silicon solar cell and glass cover. The important attributes of fabrication are the use of a back surface field which is compatible with a back surface reflector, and integration of coverglass application and cell fabrications. Cell development experiments concerned optimization of ion implantation processing of 2 ohm-cm boron-doped silicon. Process parameters were selected based on these experiments and cells with area of 34.3 sq cm wre fabricated. The average AMO efficiency of the twenty-five best cells was 13.9% and the best bell had an efficiency of 14.4%. An important innovation in cell encapsulation was also developed. In this technique, the coverglass is applied before the cell is sawed to final size. The coverglass and cell are then sawed as a unit. In this way, the cost of the coverglass is reduced, since the tolerance on glass size is relaxed, and costly coverglass/cell alignment procedures are eliminated. Adhesive investigated were EVA, FEP-Teflon sheet and DC 93-500. Details of processing and results are reported.
Spitzer, M. B.↗
BF{sub 3} PIII modeling: Implantation, amorphisation and diffusion
In the race for highly doped ultra-shallow junctions (USJs) in complementary metal oxide semi-conductor (CMOS) technologies, plasma immersion ion implantation (PIII) is a promising alternative to traditional beamline implantation. Currently, no commercial technology computer aided design (TCAD) process simulator allows modeling the complete USJ fabrication process by PIII, including as-implanted dopant profiles, damage formation, dopant diffusion and activation. In this work, a full simulation of a p-type BF{sub 3} PIII USJ has been carried out. In order to investigate the various physical phenomena mentioned above, process conditions included a high energy/high dose case (10 kV, 5 Multiplication-Sign 10{sup 15} cm{sup -2}), specifically designed to increase damage formation, as well as more technology relevant implant conditions (0.5 kV) for comparison. All implanted samples were annealed at different temperatures and times. As implanted profiles for both boron and fluorine in BF{sub 3} implants were modeled and compared to Secondary Ion Mass Spectrometry (SIMS) measurements. Amorphous/crystalline (a/c) interface depths were measured by transmission electron microscopy (TEM) and successfully simulated. Diffused profiles simulations agreed with SIMS data at low thermal budgets. A boron peak behind the a/c interface was observed in all annealed SIMS profiles for the 10 kV case, indicating boron trapping from EOR defects in this region even after high thermal budgets. TEM measurements on the annealed samples showed an end of range (EOR) defects survival behind the a/c interface, including large dislocation loops (DLs) lying on (001) plane parallel to the surface. In the last part of this work, activation simulations were compared to Hall measurements and confirmed the need to develop a (001) large BICs model.
36 MATERIALS SCIENCE↗
Nitrogen diffusion in silicate minerals, with implications for nitrogen transport and cycling in the lithosphere
Diffusion laws for nitrogen in orthoclase, quartz, olivine and clinopyroxene were determined using a combination of experimental strategies that included: in-diffusion from C-H-O-N vapor; in-diffusion from molten NH 4 Cl; and ion implantation followed by heating to mobilize N. Most experiments were conducted at pressures near 1 bar, but seven experiments were also run in a piston-cylinder device at P total = 1 GPa. The C-H-O-N-source experiments were “wet” (H 2 O present); those on ion-implanted samples were dry. All N sources were highly enriched in 15 N to avoid spurious 14 N signals resulting from surface contamination. Use of 15 N also enabled depth profiling by nuclear reaction analysis (NRA) using the 15 N(p,αγ) 12 C reaction, which has a detection limit of ~10 ppm. Nitrogen profiles in three samples were characterized by both NRA and SIMS, with similar results.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
Fusion proton diagnostic for the C-2 field reversed configuration
Measurements of the flux of fusion products from high temperature plasmas provide valuable insights into the ion energy distribution, as the fusion reaction rate is a very sensitive function of ion energy. In C-2, where field reversed configuration plasmas are formed by the collision of two compact toroids and partially sustained by high power neutral beam injection [M. Binderbauer et al., Phys. Rev. Lett. 105, 045003 (2010); M. Tuszewski et al., Phys. Rev. Lett. 108, 255008 (2012)], measurements of DD fusion neutron flux are used to diagnose ion temperature and study fast ion confinement and dynamics. In this paper, we will describe the development of a new 3 MeV proton detector that will complement existing neutron detectors. The detector is a large area (50 cm{sup 2}), partially depleted, ion implanted silicon diode operated in a pulse counting regime. While the scintillator-based neutron detectors allow for high time resolution measurements (∼100 kHz), they have no spatial or energy resolution. The proton detector will provide 10 cm spatial resolution, allowing us to determine if the axial distribution of fast ions is consistent with classical fast ion theory or whether anomalous scattering mechanisms are active. We will describe in detail the diagnostic design and present initial data from a neutral beam test chamber.
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
Development of pulsed processes for the manufacture of solar cells
Low-energy ion implantation processes for the automated production of silicon solar cells were investigated. Phosphorus ions at an energy of 10 keV and dose of 2 x 10 to the 15th power/sq cm were implanted in silicon solar cells to produce junctions, while boron ions at 25 keV and 5 x 10 to the 15th power were implanted in the cells to produce effective back surface fields. An ion implantation facility with a beam current up to 4 mA and a production throughput of 300 wafers per hour was designed and installed. A design was prepared for a 100 mA, automated implanter with a production capacity of 100 MW sub e/sq cm per year. Two process sequences were developed which employ ion implantation and furnace or pulse annealing. A computer program was used to determine costs for junction formation by ion implantation and various furnace annealing cycles to demonstrate cost effectiveness of these methods.
Minnucci, J. A.↗
Characterization and photocatalytic activity of Fe- and N-co-deposited TiO{sub 2} and first-principles study for electronic structure
Titanium dioxide (TiO{sub 2}), co-deposited with Fe and N, is first implanted with Fe by a metal plasma ion implantation (MPII) process and then annealed in N{sub 2} atmosphere at a temperature regime of 400-600 deg. C. First-principle calculations show that the (Fe, N) co-deposited TiO{sub 2} films produced additional band gap levels at the bottom of the conduction band (CB) and on the top of the valence band (VB). The (Fe, N) co-deposited TiO{sub 2} films were effective in both prohibiting electron-hole recombination and generating additional Fe-O and N-Ti-O impurity levels for the TiO{sub 2} band gap. The (Fe, N) co-deposited TiO{sub 2} has a narrower band gap of 1.97 eV than Fe-implanted TiO{sub 2} (3.14 eV) and N-doped TiO{sub 2} (2.16 eV). A significant reduction of TiO{sub 2} band gap energy from 3.22 to 1.97 eV was achieved, which resulted in the extension of photocatalytic activity of TiO{sub 2} from UV to Vis regime. The photocatalytic activity and removal rate were approximately two-fold higher than that of the Fe-implanted TiO{sub 2} under visible light irradiation. - Graphical abstract: The electronic properties of (Fe, N) co-deposited TiO{sub 2} films determined by theoretical calculations is graphically shown; Fe and N preferentially substitute the Ti and O site, to form impurity level. Highlights: > The MPII produces a simple and low cost process for the fabrication of visible light photocatalysts. > Both theoretical and experimental approaches are used to discuss the relationship between band structure and photocatalysis. > The Fe and N preferentially substitute the Ti and O site, which generate additional Fe-O and N-Ti-O impurity levels for the TiO{sub 2} band gap. > A significant reduction of TiO{sub 2} band gap energy from 3.22 to 1.97 eV was achieved.
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
Superlattice-enhanced silicon soft X-ray and charged particle detectors with nanosecond time response
Here, silicon detectors are an essential measurement tool for Inertial Confinement Fusion and High-Energy-Density Physics Applications, where temporal response of the order of nanoseconds is essential. Soft X-rays (<1 keV), Ultraviolet light, and low-energy electrons (<10 keV) can provide essential information in diagnosing rapidly changing plasma conditions, but reducing the detector dead layer is essential to improving detector response for these shallowly absorbed particles. This paper details a study of silicon detector surface preparation methods such as ion implant parameters, and the addition of a quantum 2D superlattice, to produce fast detectors that are highly sensitive to shallowly absorbed radiation. Measurements of visible light quantum efficiency, electron responsivity, and pulsed x-ray response indicate that detectors with a 2-layer superlattice enjoy a significant benefit over equivalent detectors using an ion implant at the illuminated surface.
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
Effects of processing and dopant on radiation damage removal in silicon solar cells
Gallium and boron doped silicon solar cells, processed by ion implantation followed by either laser or furnace anneal were irradiated by 1 MeV electrons and their postirradiation recovery by thermal annealing was determined. During the postirradiation anneal, gallium doped cells prepared by both processes recovered more rapidly and exhibited none of the severe reverse annealing observed for similarly processed 2 ohm-cm boron doped cells. Ion implanted furnace annealed 0.1 ohm-cm boron doped cells exhibited the lowest post-irradiation annealing temperatures after irradiation. The drastically lowered recovery temperature is attributed to the reduced oxygen and carbon content of the 0.1 ohm-cm cells. Analysis based on defect properties and annealing kinetics indicates that further reduction in annealing temperature is attainable with further reduction in the silicon's carbon and/or divacancy content after irradiation.
Weinberg, I.↗
Effects of processing and dopant on radiation damage removal in silicon solar cells
Gallium and boron doped silicon solar cells, processed by ion-implantation followed by either laser or furnace anneal were irradiated by 1 MeV electrons and their post-irradiation recovery by thermal annealing determined. During the post-irradiation anneal, gallium-doped cells prepared by both processes recovered more rapidly and exhibited none of the severe reverse annealing observed for similarly processed 2 ohm-cm boron doped cells. Ion-implanted furnace annealed 0.1 ohm-cm boron doped cells exhibited the lowest post-irradiation annealing temperatures (200 C) after irradiation to 5 x 10 to the 13th e(-)/sq cm. The drastically lowered recovery temperature is attributed to the reduced oxygen and carbon content of the 0.1 ohm-cm cells. Analysis based on defect properties and annealing kinetics indicates that further reduction in annealing temperature should be attainable with further reduction in the silicon's carbon and/or divacancy content after irradiation.
Weinberg, I.↗
Effect of microstructure and neutron irradiation defects on deuterium retention in SiC
Retention of hydrogen isotopes is a critical concern for operating fusion reactors as retained tritium both activates components and removes scarce fuel from the fuel cycle. Radiation-induced displacement damage in SiC influences the retention of hydrogen isotopes compared to pristine SiC. Deuterium retention in neutron irradiated high purity SiC has been compared to different microstructures of non-irradiated high purity SiC using thermal desorption spectroscopy after gas charging and low energy ion implantation. Experimental results show lower deuterium retention in single crystal SiC than in polycrystal SiC indicating that grain boundaries are key trapping features in unirradiated SiC. Deuterium is released at lower temperatures in neutron irradiated polycrystal SiC compared to pristine polycrystal SiC, suggesting weaker trapping by radiation-induced defects compared to grain boundary trapping sites in the pristine materials. Low energy ion implantation caused a high deuterium release temperature, highlighting the sensitivity of deuterium release behaviour to radiation defect characteristics. First principles calculations have been conducted to identify energetically favourable trapping sites in SiC at the H ABc V Si and H TSi V C complexes, and migration barriers between interstitial sites. This helps interpret experimental results and derive effective diffusivity of hydrogen isotopes in SiC in the presence of vacancies.
36 MATERIALS SCIENCE↗
Effect of 1.0 MeV electron irradiation on shunt resistance in Si-MINP solar cells
Shunt resistance from 100 K to 400 K is compared for diffused and ion implanted cells before and after irradiation. R sub sh decreases from greater than 10 to the 7th power omega-square cm for T less than 250 K to 10 to the 4th power omega-square cm at 400 K for non-irradiated diffused cells. Electron irradiation causes a more rapid decrease in R sub sh for T greater than 250 K. Ion implanted cells exhibit a similar trend except that R sub sh is significantly less for T less than 250 K and is more sensitive to irradiation at these low temperatures. The mechanism of R sub sh appears to be a combination of multistep tunneling and trapping - detrapping in the defect states of the semiconductor. Radiation serves to increase the density of these states to decrease R sub sh.
Anderson, Wayne A.↗
Seamless lateral graphene p–n junctions formed by selective in situ doping for high-performance photodetectors
Lateral graphene p–n junctions are important since they constitute the core components in a variety of electronic/photonic systems. However, formation of lateral graphene p–n junctions with a controllable doping levels is still a great challenge due to the monolayer feature of graphene. Herein, by performing selective ion implantation and in situ growth by dynamic chemical vapor deposition, direct formation of seamless lateral graphene p–n junctions with spatial control and tunable doping is demonstrated. Uniform lattice substitution with heteroatoms is achieved in both the boron-doped and nitrogen-doped regions and photoelectrical assessment reveals that the seamless lateral p–n junctions exhibit a distinct photocurrent response under ambient conditions. As ion implantation is a standard technique in microelectronics, our study suggests a simple and effective strategy for mass production of graphene p–n junctions with batch capability and spatial controllability, which can be readily integrated into the production of graphene-based electronics and photonics.
36 MATERIALS SCIENCE↗
Ion mixing
Recent experimental studies of the ion-mixing phenomenon are summarized. Ion mixing is differentiated from ion implantation and shown to be a useful technique for overcoming the sputter-dependent limitations of implantation processes. The fundamental physical principles of ion/solid interactions are explored. The basic experimental configurations currently in use are characterized: bilayered samples, multilayered samples, and samples with a thin marker layer. A table listing the binary systems (metal-semiconductor or metal-metal) which have been investigated using each configuration is presented. Results are discussed, and some sample data are plotted. The prospects for future application of ion mixing to the alteration of solid surface properties are considered. Practical applications are seen as restricted by economic considerations to the production of small, expensive components or to fields (such as the semiconductor industry) which already have facilities for ion implantation.
Matteson, S.↗
InP shallow-homojunction solar cells
Indium phosphide solar cells with very thin n-type emitters have been made by both ion implantation and metalorganic chemical vapor deposition. Air mass zero efficiencies as high as 18.8 percent (NASA measurement) have been achieved. Although calculations show that, as is the case with GaAs, a heterostructure is expected to be required for the highest efficiencies attainable, the material properties of InP give the shallow-homojunction structure a greater potential than in the case of GaAs. The best cells, which were those made by ion implantation, show open-circuit voltage (V sub oc) of 873 mV, short-circuit current of 357 A/sq m (35.7 mA/sq cm), and fill factor of 0.829. Improvements are anticipated in all three of these parameters. Internal quantum efficiency peaks at over 90 percent in the red end of the spectrum, but drops to 54 percent in the blue end. Other cells have achieved 74 percent in the blue end. Detailed modeling of the data indicates that a high front surface recombination velocity is responsible for the low blue response, that the carrier lifetime is high enough to allow good carrier collection from both the base and the emitter, and that the voltage is base-limited.
Keavney, Christopher↗
Edge termination in vertical GaN diodes: Electric field distribution probed by second harmonic generation
We characterized the electric field distribution of GaN-on-GaN p–n diodes with partially compensated ion-implanted edge termination (ET) using an electric field induced second harmonic generation technique (EFISHG). The distributed electric field from the anode to the outer edge of the ET demonstrates the effectiveness of the ET structure. However, EFISHG also shows that its effectiveness is strongly dependent on the acceptor charge distribution in the ET's partially compensated layer (PC). A generally lower amount of acceptor charge can be inferred from the measured electric field distribution resulting from excessive ion implantation energy or dose during ET fabrication and causing lower than optimal breakdown voltage. Localized field crowding can be observed when the remaining acceptors uncompensated by the implant in the PC layer are nonuniformly distributed around the periphery of the devices. Important information can be obtained from these direct electric field measurements and used for optimizing the device design and fabrication process.
Cao, Yuke↗
Sliding seal materials for low heat rejection engines
Sliding friction coefficients and wear rates of promising piston seal materials were measured under temperature, environmental, velocity, and loading conditions that are representative of the low heat rejection (LHR) diesel engine environment. These materials included carbides, oxides, and nitrides. In addition, silicon nitride and partially stablized zirconia disks (cylinder liners) were ion-implanted with TiNi, Ni, Co, and Cr, and subsequently run against carbide pins (piston rings), with the objective of producing reduced friction via solid lubrication at elevated temperature. Friction and wear measurements were obtained using pin-on-disk laboratory experiments and a unique engine friction test rig. Unmodified ceramic sliding couples were characterized at all temperatures by friction coefficients of 0.24 and above during the pin-on-disk tests. The coefficient at 800 C in an oxidizing environment was reduced to below 0.1, for certain material combination, by the ion-implantation of TiNi or Co. This beneficial effect was found to derive from the lubricious Ti, Ni, and Co oxides. Similar results were demonstrated on the engine friction test rig at lower temperatures. The structural integrity and feasibility of engine application with the most promising material combination were demonstrated during a 30-hour single-cylinder, direct-injection diesel engine test.
Beaty, Kevin↗