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DOE OSTI2021

Identification of localized radiation damage in power MOSFETs using EBIC imaging

The rapidly increasing use of electronics in high-radiation environments and the continued evolution in transistor architectures and materials demand improved methods to characterize the potential damaging effects of radiation on device performance. Here, electron-beam-induced current is used to map hot-carrier transport in model metal-oxide semiconductor field-effect transistors irradiated with a 300 KeV focused He + beam as a localized line spanning across the gate and bulk Si. By correlating the damage to the electronic properties and combining these results with simulations, the contribution of spatially localized radiation damage on the device characteristics is obtained. Furthermore, this identified damage, caused by the He + beam, is attributed to localized interfacial P b centers and delocalized positive fixed-charges, as surmised from simulations. Comprehension of the long-term interaction and mobility of radiation-induced damage are key for future design of rad-hard devices.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗

DOE OSTI2015

SU-E-T-171: Characterization of the New Xoft Axxent Electronic Brachytherapy Source Using PRESAGE Dosimeters

Purpose: To characterize the Xoft Axxent electronic brachytherapy source using PRESAGE™ dosimeters to obtain independent confirmation of TG-43U1 dosimetry values from previous studies and ascertain its reproducibility in HDR brachytherapy. Methods: PRESAGE™ dosimeters are solid, polyurethane-based dosimeters doped with radiochromic leucodyes that produce a linear optical-density response when exposed to radiation. Eight 1-kg dosimeters were scanned prior to irradiation on an optical-CT scanner to eliminate background signal and any optical imperfections from each dosimeter. To quantify potential imaging artifacts due to oversaturated responses in the immediate range of the source, half of the eight dosimeters were cast with a smaller channel diameter of 5.4 mm, and the other half were cast with a larger channel diameter of 15mm. During irradiation, the catheters were placed in the center of each channel. Catheters fit the 5.4mm diameters channels whereas polyurethane plugs were inserted into the larger channels to create a sturdy, immobile catheter which allowed uniform dose distributions. Two dosimeters of each 5.4mm and 15mm were irradiated at either 1517.3 cGy or 2017.5 cGy. Post-irradiation scans were performed within 48 hours of irradiation. A 3D reconstruction based on subtraction of these two images and the relative dose measurements were made using in-house software. Results: Comparing measured radial dose rates with previous results revealed smaller percent errors when PRESAGE™ irradiations were at lower maximum dose. The dosimeters showed small deviations in radial dose function, g{sub p} (r), from previous studies. Among the dosimeters irradiated at 1517.3 cGy, the g{sub p}(r) compared to previous studies fluctuated from 0.0043 to 0.3922. This suggests small fluctuations can drastically change radial dose calculations. Conclusion: The subtraction of pre-irradiation and post-irradiation scans of PRESAGE™ dosimeters using an optical-CT scanner shows promising results in determining 3D dosimetry for Xoft Axxent devices; however, further research is recommended. NIH Grant#: 5-U24-CA081647-13; ROI Grant#: 5R01CA100835.

60 APPLIED LIFE SCIENCES↗

NASA NTRS1994

Design of high-efficiency, radiation-hard, GaInP/GaAs solar cells

In recently years, Ga(0.5)In((0.5)P/GaAs cells have drawn increased attention both because of their high efficiencies and because they are well suited for space applications. They can be grown and processed as two-junction devices with roughly twice the voltage and half the current of GaAs cells. They have low temperature coefficients, and have good potential for radiation hardness. We have previously reported the effects of electron irradiation on test cells which were not optimally designed for space. From those results we estimated that an optimally designed cell could achieve 20 percent after irradiation with 10(exp 15) cm(exp -2) 1 MeV electrons. Modeling studies predicted that slightly higher efficiencies may be achievable. Record efficiencies for EOL performance of other types of cells are significantly lower. Even the best Si and InP cells have BOL efficiencies lower than the EOL efficiency we report here. Good GaAs cells have an EOL efficiency of 16 percent. The InP/Ga(0.5)In(0.5)As two-junction, two-terminal device has a BOL efficiency as high as 22.2 percent, but radiation results for these cells were limited. In this study we use the previous modeling and irradiation results to design a set of Ga(0.5)In(0.5)P/GaAs cells that will demonstrate the importance of the design parameters and result in high-efficiency devices. We report record AMO efficiencies: a BOL efficiency of 25.7 percent for a device optimized for BOL performance and two of different designs with EOL efficiencies of 19.6 percent (at 10(exp 15) cm(exp -2) 1MeV electrons). We vary the bottom-cell base doping and the top-cell thickness to show the effects of these two important design parameters. We get an unexpected result indicating that the dopant added to the bottom-cell base also increases the degradation of the top cell.

Kurtz, Sarah R.↗

DOE OSTI2015

Distinct photoresponse in graphene induced by laser irradiation

The graphene-based photodetector with tunable p-p{sup +}-p junctions was fabricated through a simple laser irradiation process. Distinct photoresponse was observed at the graphene (G)-laser irradiated graphene (LIG) junction by scanning photocurrent measurements, and its magnitude can be modulated as a result of a positive correlation between the photocurrent and doping concentration in LIG region. Detailed investigation suggests that the photo-thermoelectric effect, instead of the photovoltaic effect, dominates the photocurrent generation at the G-LIG junctions. Such a simple and low-cost technique offers an alternative way for the fabrication of graphene-based optoelectronic devices.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2016

Effect of low energy ion irradiation on the transport and structural behavior of PEDOT:PSS systems

In the past two decades, organic conductors have been widely explored for use in different applications. One of the extensively studied organic material for the use in the field of electronic devices is PEDOT:PSS. Organic/inorganic nanocomposite systems have been developed to improve the properties of organic materials. In the present study, we have made an attempt to understand the effect of low energy oxygen ion beam irradiation on the electrical and structural properties of PEDOT:PSS and PEDOT:PSS/TiO{sub 2} nanocomposites. The observed reduction in electrical properties in PEDOT:PSS systems may be linked to radiation induced phase change. The nanocomposite systems show better stability to the ion irradiation compared to the pure systems.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2023

Athermal annealing of pre-existing defects in crystalline silicon

Systematic investigations of electronic energy loss (S e ) effects on pre-existing defects in crystalline silicon (Si) are crucial to provide reliance on the use of ionizing irradiation to anneal pre-existing defects, leading to successful implementation of this technology in the fabrication of Si-based devices. In this regard, the S e effects on nonequilibrium defect evolution in pre-damaged Si single crystals at 300 K has been investigated using intermediate-energy ions (12 MeV O and Si ions) that interact with the pre-damaged surface layers of Si mainly by ionization, except at the end of their range where the nuclear energy loss (S n ) is no longer negligible. Furthermore, under these irradiation conditions, experimental results and molecular dynamics simulations have revealed that pre-existing disorder in Si can be almost fully annealed by subsequent irradiation with intermediate-energy incident ions with S e values as low as 1.5–3.0 keV/nm. Selective annealing of pre-existing defect levels in Si at room temperature can be considered as an effective strategy to mediate the transient enhanced diffusion of dopants in Si. This approach is more desirable than the regular thermal annealing, which is not compatible with the processing requirements that fall below the typical thermal budget.

36 MATERIALS SCIENCE↗

DOE OSTI2024

Recommendations for harmonized reporting of radiation Dosimetry by adoption of Compatibility in Irradiation Research Protocols Expert Roundtable (CIRPER)

Here, in radiobiology, radiation physics, and related areas, there is growing interest in transitioning from cesium-based irradiators to X-ray technologies. Therefore, it makes it imperative for reproducibility purposes, for researchers to provide specifications regarding device parameters, machine calibration details, and experimental setup when innovative X-ray technology is being employed. Several groups have already identified a glaring lack in completeness of critical information on experimental setups, equipment, and physical parameters in published radiation biology studies. The Alternative Technologies Meta Study Report by Brookhaven National Laboratory (BNL) examined 456 manuscripts published between 2017-2021. Only 64 of the reviewed studies (14.0%) consistently reported methods that could allow for replication of their studies. However, 85% provided information on the manufacturer, the irradiator model and the absorbed radiation dose. Approximately 66% provided information on the energy spectra and the dose rate, but only one third disclosed the filter used. Less than 15% of the reviewed studies reported information on calibration and field geometry, specifically field size and distance from source, which are critical parameters in determining the absorbed radiation dose.

62 RADIOLOGY AND NUCLEAR MEDICINE↗

DOE OSTI2021

Large area vertical Ga 2 O 3 Schottky diodes for X-ray detection

In this work, the Schottky barrier diodes were fabricated from a bulk Sn-doped (001) n-type Ga 2 O 3 substrate with a Si-doped epitaxial layer grown by hydride vapor phase epitaxy (HVPE), which demonstrate a good response to X-rays. Circular metal contacts with diameters ranging from 50 to 1500 um and square metal contacts ranging from 100 X 100 to 1600 X 1600 um 2 were deposited on the wafer. The devices were characterized for their electrical performance including forward current–voltage (FIV), reverse current–voltage (RIV), and capacitance-voltage (CV) measurements. The best device showed a breakdown voltage of –804 V and the devices tested had an average ideality of 1.12. The devices exhibited a clear response to X-rays even at zero bias with an experimentally observed response time 1.03 s and a linear response of detector signal to the X-ray dose rate. The experimentally observed device response time improved to 0.25 s when bias voltage is applied. The device also survived a long-term stability test of over 2 h under a constant X-ray irradiation. The sensitivity and the lower limit of detection for X-ray by Ga2O3 epitaxial Schottky detectors were discussed and determined as 43.5 C/mGy cm –2 at –200 V and 8.31 nGy Air /s, respectively.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

DOE OSTI2017

Temperature-Dependent Thermal Boundary Conductance of Monolayer MoS 2 by Raman Thermometry

The electrical and thermal behavior of nanoscale devices based on two-dimensional (2D) materials is often limited by their contacts and interfaces. Here we report the temperature-dependent thermal boundary conductance (TBC) of monolayer MoS 2 with AlN and SiO 2 , using Raman thermometry with laser-induced heating. The temperature-dependent optical absorption of the 2D material is crucial in such experiments, which we characterize here for the first time above room temperature. We obtain TBC ~ 15 MW m –2 K –1 near room temperature, increasing as ~ T 0.65 in the range 300–600 K. The similar TBC of MoS 2 with the two substrates indicates that MoS 2 is the “softer” material with weaker phonon irradiance, and the relatively low TBC signifies that such interfaces present a key bottleneck in energy dissipation from 2D devices. As a result, our approach is needed to correctly perform Raman thermometry of 2D materials, and our findings are key for understanding energy coupling at the nanoscale.

2D materials↗

DOE OSTI2016

Ion beam irradiation as a tool to improve the ionic conductivity in solid polymer electrolyte systems

Solid polymer electrolytes (SPEs) have potential applications in solid state electronic and energy devices. The optimum conductivity of SPEs required for such applications is about 10{sup −1} – 10{sup −3} Scm{sup −1}, which is hard to achieve in these systems. It is observed that ionic conductivity of SPEs continuously increase with increasing concentration of inorganic salt in the host polymer. However, there is a critical concentration of the salt beyond which the conductivity of SPEs decreases due to the formation of ion pairs. In the present study, solid polymer thin films based on poly (ethylene oxide) (PEO) complexed with NaBr salt with different concentrations have been prepared and the concentration at which ion pair formation occurs in PEO{sub x}NaBr is identified. The microstructure of the SPE with highest ionic conductivity is modified by irradiating it with low energy O{sup +1} ion (100 keV) of different fluencies. It is observed that the ionic conductivity of irradiated SPEs increases by one order in magnitude. The increase in ionic conductivity may be attributed to the enhanced segmental motion of the polymer chains due to radiation induced micro structural modification.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

DOE OSTI2025

Modulation of thermal conductivity of iron-doped ß-Ga2O3 by helium-ion irradiation

This study examines the impact of helium-ion irradiation on the thermal conductivity of ß-Ga2O3. A laser-based spatial domain thermoreflectance technique is used to investigate thermal conductivity map for both un-irradiated and irradiated ß-Ga2O3, which are then validated against simulation results derived from density functional theory-based phonon transport simulations. Since helium bubble evolution was ob- served at the nanoscale using transmission electron microscopy, the simulation study was carried out on eight distinct helium-induced sites in ß-Ga2O3. Our findings indicate a reduction in thermal conductivity for the irradiated samples. Experimental results show a significant reduction in thermal conductivity in irradiated samples, with de- creases of approximately 25% along the [100] direction and 40% along [001] directions. Phonon transport simulations closely replicate these findings, particularly when helium occupying interstitial sites, predicting reductions of ˜53% along [100] and ˜50% along [001] directions. This work underscores the role of irradiation-induced microstructural changes in the heat transport properties of ß-Ga2O3 which is crucial for its application in sensor devices in extreme environments.

36 - MATERIALS SCIENCE↗

DOE OSTI2015

Design and Demonstration of a Material-Plasma Exposure Target Station for Neutron Irradiated Samples

Fusion energy is the most promising energy source for the future, and one of the most important problems to be solved progressing to a commercial fusion reactor is the identification of plasma-facing materials compatible with the extreme conditions in the fusion reactor environment. The development of plasma–material interaction (PMI) science and the technology of plasma-facing components are key elements in the development of the next step fusion device in the United States, the so-called Fusion Nuclear Science Facility (FNSF). All of these PMI issues and the uncertain impact of the 14-MeV neutron irradiation have been identified in numerous expert panel reports to the fusion community. The 2007 Greenwald report classifies reactor plasma-facing materials (PFCs) and materials as the only Tier 1 issues, requiring a “. . . major extrapolation from the current state of knowledge, need for qualitative improvements and substantial development for both the short and long term.” The Greenwald report goes on to list 19 gaps in understanding and performance related to the plasma–material interface for the technology facilities needed for DEMO-oriented R&D and DEMO itself. Of the 15 major gaps, six (G7, G9, G10, G12, G13) can possibly be addressed with ORNL’s proposal of an advanced Material Plasma Exposure eXperiment. Establishing this mid-scale plasma materials test facility at ORNL is a key element in ORNL’s strategy to secure a leadership role for decades of fusion R&D. That is to say, our end goal is to bring the “signature facility” FNSF home to ORNL. This project is related to the pre-conceptual design of an innovative target station for a future Material–Plasma Exposure eXperiment (MPEX). The target station will be designed to expose candidate fusion reactor plasma-facing materials and components (PFMs and PFCs) to conditions anticipated in fusion reactors, where PFCs will be exposed to dense high-temperature hydrogen plasmas providing steady-state heat fluxes of 5–20 MW/m 2 and ion fluxes up to 10 24 m -2 s -1 . Since PFCs will have to withstand neutron irradiation displacement damage up to 50 dpa, the target station design must accommodate radioactive specimens (materials to be irradiated in HFIR or at SNS) to enable investigations of the impact of neutron damage on materials. Therefore, the system will have to be able to install and extract irradiated specimens using equipment and methods to avoid sample modification, control contamination, and minimize worker dose. Included in the design considerations will be an assessment of all the steps between neutron irradiation and post-exposure materials examination/characterization, as well as an evaluation of the facility hazard categorization. In particular, the factors associated with the acquisition of radioactive specimens and their preparation, transportation, experimental configuration at the plasma-specimen interface, post-plasma-exposure sample handling, and specimen preparation will be evaluated. Neutronics calculations to determine the dose rates of the samples were carried out for a large number of potential plasma-facing materials.

42 ENGINEERING↗

DOE OSTI2015

Recent upgrades and new scientific infrastructure of MARIA research reactor, Otwock-Swierk, Poland

The MARIA reactor is open-pool type, water and beryllium moderated. It has two independent primary cooling systems: fuel and pool cooling system. Each fuel assembly is cooled down separately in pressurized channels with individual performances characterization. The fuel assemblies consist of five layers of bent plates or six concentric tubes. Currently it is one of the most powerful research reactors in Europe with operation availability at least up to 2030. Its nominal thermal power is 30 MW. It is characterized by high neutron flux density: up to 3x10{sup 14} n cm{sup -2} s{sup -1} in case of thermal neutrons, and up to 2x10{sup 13} n cm{sup -2} s{sup -1} in case of fast neutrons. The reactor is operated for ca. 4000 h per year. The reactor facility is equipped with fully equipped three hot cells with shielding up to 10{sup 15} Bq. Adjacent to the reactor facility, the radio-pharmaceutics plant (POLATOM) and Material Research Laboratory are located. They are equipped with a number of hot cells with instrumentation. The transport system of radioactive materials from reactor facility to Material Research Laboratory is available. During 2014 the MARIA reactor has been operated with three different types of fuel the same time: previous 36% enriched fuel, and two types of new LEU fuels. In the meantime, molybdenum irradiation programme has been developed. Maria is a multifunctional research tool, with a notable application in production of radioisotopes, radio-pharmaceutics manufacturing (ca. 600 TBq/y), {sup 99}Mo for medical scintigraphy (ca. 6000 TBq/y), neutron transmutation doping of silicon single crystals, wide scientific research based on neutron beams utilization. From the beginning MARIA reactor was intended for loop and fuel testing research activities. Currently it is used mostly as material testing and irradiation facility and for that reason it has wide experimental capabilities. There are eight horizontal irradiation channels from among whom six of them are equipped with instrumentation for condensed matter physics research: - H3 - spectrometer and diffractometer with double monochromator; - H4 - small angle scattering spectrometer; - H5 - polarized neutrons spectrometer; - H6, H7 - two 3-axial crystal neutron spectrometers; - H8 - neutron radiography stand. For two horizontal channels are ongoing exploitation programs: - H2 - station with epithermal neutron beam produced in uranium converter is being developed. Intelligent converter will be installed on the periphery of reactor core. The intensity of the beam will be at the level 2x10{sup 9} n cm{sup -2}s{sup -1} what makes the beam unique in the Europe. - H1 - special pneumatic horizontal mail is being developed for irradiation material samples in the vicinity of the core i.e. in the distal part of the H1 channel. The number of neutron irradiation facilities in MARIA reactor is increasing every year. Numerous of thermal neutron irradiation channels including fast hydraulic rabbit system and large size channels for fast neutron irradiation are used routinely. Recently new in-pile facility with ITER-like neutron energy spectrum for 14 MeV neutron irradiation has been constructed. Taking into account its performance and ability of almost incessant operation the facility appears as one of the most powerful 14 MeV neutron sources. The facility shall be used for material research connected with thermonuclear devices (ITER) and 4. generation nuclear reactors. The system of independent fuels channels used in MARIA reactor appear to be very flexible and very convenient to be used as irradiation channels for uranium targets for {sup 99}Mo production. Currently, MARIA reactor supplies ca. 18% world production of {sup 99}Mo. The MARIA reactor research activities are still extended. The current scientific projects are connected e.g. with silicon neutron transmutation doping, in-pile gamma heating measurements, French calculation codes implementation (TRIPOLI4, APOLLO2). The horizontal neutron beams utilization is also developed. The MARIA reactor, due to its primary application connected with loop and fuel testing, is very convenient for testing the nuclear instrumentation, control and measurement systems.

21 SPECIFIC NUCLEAR REACTORS AND ASSOCIATED PLANTS↗

DOE OSTI2016

Modeling Changes in Measured Conductance of Thin Boron Carbide Semiconducting Films Under Irradiation

Semiconducting, p-type, amorphous partially dehydrogenated boron carbide films (a-B 10 C 2+x :H y ) were deposited utilizing plasma enhanced chemical vapor deposition (PECVD) onto n-type silicon thus creating a heterojunction diode. A model was developed for the conductance of the device as a function of perturbation frequency (f) that incorporates changes of the electrical properties for both the a-B 10 C 2+x :H y film and the silicon substrate when irradiated. The virgin model has 3 independent variables (R1, C1, R3), and 1 dependent variable (f). These samples were then irradiated with 200 keV He + ions, and the conductance model was matched to the measured data. It was found that initial irradiation (0.1 displacements per atom (dpa) equivalent) resulted in a decrease in the parallel junction resistance parameter from 6032 Ω to 2705 Ω. Further irradiation drastically increased the parallel junction resistance parameter to 39000 Ω (0.2 dpa equivalent), 77440 Ω (0.3 dpa equivalent), and 190000 Ω (0.5 dpa equivalent). It is believed that the initial irradiation causes type inversion of the silicon substrate changing the original junction from a p-n to a p-p+ with a much lower barrier height leading to a lower junction resistance component between the a-B 10 C 2+x :H y and irradiated silicon. In addition, it was found that after irradiation, a second parallel resistor and capacitor component is required for the model, introducing 2 additional independent variables (R2, C2). This is interpreted as the junction between the irradiated and virgin silicon near ion end of range.

36 MATERIALS SCIENCE↗

DOE OSTI2020

Bayesian Structural Time Series for Behind-the-Meter Photovoltaic Disaggregation: Preprint

Distributed photovoltaic (PV) generation often occurs ``behind the meter": a grid operator can only observe the net load, which is the sum of the gross load and distributed PV generation. This lack of observability poses a challenge to system operation at both bulk level and distribution level. The lack of real-time or near-future disaggregated estimates of gross load and PV generation will lead to over scheduling of energy production and regulation reserves, reliability constraints violations, wear and tear of controller devices, and potentially cascading failures of a system. In this paper we propose the use of a Bayesian Structural Time Series (BSTS) model with local solar irradiance measurements to disaggregate the summed PV generation and gross load signals at a downstream measurement site. BSTSs are a highly expressive model class that blends classic time series models with the powerful Bayesian state space estimation framework. Disaggregation is done probabilistically, which automatically quantifies the uncertainties of the estimated PV generation and gross load consumption. Depending on the data availability in real-time, it can be used to disaggragate PV and gross load at customer site, or can be used at the feeder level. In this paper, we focus on solving the problem at feeder level. We compare the performance of a BSTS model as well as a handful of state-of-the-art methods on a Pecan Street AMI dataset, using the National Solar Radiation Database (NSRDB) to estimate local irradiance.

Bayesian structural time series↗

DOE OSTI2015

Test results of an ITER relevant FPGA when irradiated with neutrons

The data acquisition and control instrumentation cubicles room of the ITER tokamak will be irradiated with neutrons during the fusion reactor operation. A Virtex-6 FPGA from Xilinx (XC6VLX365T-1FFG1156C) is used on the ATCA-IO-PROCESSOR board, included in the ITER Catalog of I and C products - Fast Controllers. The Virtex-6 is a re-programmable logic device where the configuration is stored in Static RAM (SRAM), functional data stored in dedicated Block RAM (BRAM) and functional state logic in Flip-Flops. Single Event Upsets (SEU) due to the ionizing radiation of neutrons causes soft errors, unintended changes (bit-flips) to the values stored in state elements of the FPGA. The SEU monitoring and soft errors repairing, when possible, were explored in this work. An FPGA built-in Soft Error Mitigation (SEM) controller detects and corrects soft errors in the FPGA configuration memory. Novel SEU sensors with Error Correction Code (ECC) detect and repair the BRAM memories. Proper management of SEU can increase reliability and availability of control instrumentation hardware for nuclear applications. The results of the tests performed using the SEM controller and the BRAM SEU sensors are presented for a Virtex-6 FPGA (XC6VLX240T-1FFG1156C) when irradiated with neutrons from the Portuguese Research Reactor (RPI), a 1 MW nuclear fission reactor operated by IST in the neighborhood of Lisbon. Results show that the proposed SEU mitigation technique is able to repair the majority of the detected SEU errors in the configuration and BRAM memories. (authors)

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

DOE OSTI2022

Determination of energy correction coefficient for neutron albedo dosimeter. Three approaches

To accurately determine dose, albedo TLD dosimeters require application of a neutron energy correction factor (NECF). Here, in this paper, the results from three different methods were used to determine NECFs. In the first method, NECF values were calculated as a ratio of the known “conventional true” dose and the neutron dose reported by albedo dosimeter(s) irradiated on a phantom. The results from this direct method were utilized for verification of two other methods. The second method used a specially designed device called the Neutron Area Monitor (NAM) model 5. The third method of NECF determination was based on the response of a BF 3 tube under different levels of moderation. The results of this work showed that the Navy-developed Neutron Area Monitor (NAM) model 5 measures NECF values correctly when irradiated with 252 Cf (bare and D 2 O-moderated). This was an important result, because it validated the use of the NAM-5 in nuclear power and marine propulsion reactors, as their neutron energy spectrum is approximated by the field of a Cadmium-coated 30 cm diameter steel sphere of D 2 O moderated 252 Cf. In the case of a broad neutron energy spectrum the 6 Li response to the small amount of slow neutrons outweighs its response to the fast neutrons overwhelmingly responsible for the neutron dose rate. Based on the obtained results we can conclude that NAM-5 provides correct NECF determination if the fraction of slow neutrons in the neutron dose rate is more than 20%. A satisfactory correlation between the NECF determined by NAM-5 and the multi-moderated BF3 tube method was observed, but the multi-moderated BF 3 tube values were ~30% lower than those obtained by the NAM-5 at the same locations for broader neutron energy spectrum locations.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

DOE OSTI2025

Revealing a Pathway for Low-Temperature Recrystallization in Germanium

Thermally activated annealing in semiconductors faces inherent limitations, such as dopant diffusion. Here, a nonthermal pathway is demonstrated for a complete structural restoration in predamaged germanium via ionization-induced recovery. By combining experiments and modeling, this study reveals that the energy transfer of only 2.4 keV nm −1 from incident ions to target electrons can effectively annihilate pre-existing defects and restore the original crystalline structure at room temperature. Moreover, it is revealed that the irradiation-induced crystalline-to-amorphous (c/a) transformation in Ge is reversible, a phenomenon previously considered unattainable without additional thermal energy imposed during irradiation. For partially damaged Ge, the overall damage fraction decreases exponentially with increasing fluence. Surprisingly, the recovery process in preamorphized Ge starts with defect recovery outside the amorphous layer and a shrinkage of the amorphous thickness. After this initial stage, the remaining damage decreases slowly with increasing fluence, but full restoration of the pristine state is not achieved. These differences in recovery are interpreted in the framework of structural differences in the initial defective layers that affect recovery kinetics. This study provides new insights on reversing the c/a transformation in Ge using highly-ionizing irradiation and has broad implications across materials science, radiation damage mitigation, and fabrication of Ge-based devices.

athermal recovery↗