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Ice Nucleation Spectrometer (INS) Instrument Handbook

The Ice Nucleation Spectrometer (INS) is an offline analytical measurement system used to process filter samples for freezing temperature spectra of immersion-mode ice nucleating particle (INP) number concentrations. It is almost identical to the CSU Ice Spectrometer (IS) design. While basic immersion freezing methods have been applied for decades, recent intercomparison studies (DeMott et al. 2017, 2018b) with other methods for sampling ambient INPs support the method’s utility. Use of the INS with filters produces spectra spanning wide dynamic ranges of temperature and, hence, INP concentration (e.g., six orders of magnitude). The INS is supported with well-established experimental protocols and has been applied in many diverse scenarios.

54 ENVIRONMENTAL SCIENCES↗

Joint Sample Analyses of Nuclear Forensic Materials Provided by the Republic of Kazakhstan: U. S. Laboratory Results

This document serves as an interim report to summarize sample analyses performed by Lawrence Livermore National Laboratory (LLNL) and Los Alamos National Laboratory (LANL) on a series of five nuclear forensics samples provided by the Institute of Nuclear Physics (INP) in the Republic of Kazakhstan. The sample set contains four uranium oxide powders and one low-enriched uranium fuel pellet. The samples were provided as part of a broader collaboration that involved a set of joint sample analyses conducted by INP and the US National Laboratories. The joint analyses are being conducted using well-developed analytical plans. These activities are designed to support the advancement of nuclear forensic science and capacity building in all three institutes in both countries. This report builds upon an earlier preliminary summary of the joint interactions and will be augmented by a final report. The final report will summarize the results and value of all sample analyses performed at the three institutes (INP, LLNL, and LANL). The final report will also provide an intercomparison of the results, analytical methods and best practices employed, as well as outline future collaborative nuclear forensics activities that are being developed in the Kazakhstan region.

and nuclear chemistry↗

Using depolarization to quantify ice nucleating particle concentrations: a new method

We have developed a new method to determine ice nucleating particle (INP) concentrations observed by the Texas A&M University continuous flow diffusion chamber (CFDC) under a wide range of operating conditions. In this study, we evaluate differences in particle optical properties detected by the Cloud and Aerosol Spectrometer with POLarization (CASPOL) to differentiate between ice crystals, droplets, and aerosols. The depolarization signal from the CASPOL instrument is used to determine the occurrence of water droplet breakthrough (WDBT) conditions in the CFDC. The standard procedure for determining INP concentration is to count all particles that have grown beyond a nominal size cutoff as ice crystals. During WDBT this procedure overestimates INP concentration, because large droplets are miscounted as ice crystals. Here we design a new analysis method based on depolarization ratio that can extend the range of operating conditions of the CFDC. The method agrees reasonably well with the traditional method under non-WDBT conditions with a mean percent error of ±32.1 %. Additionally, a comparison with the Colorado State University CFDC shows that the new analysis method can be used reliably during WDBT conditions.

54 ENVIRONMENTAL SCIENCES↗

ARM Data for Examining the Ice-Nucleating Particles from SGP Part II (ExINP-SGP II) Gas Adsorption Analyzer

Knowledge of airborne particulate matter (PM), especially the particles that have supermicron diameters, is key for understanding ice-nucleating particles (INPs). Supported by the Atmospheric Radiation Measurement (ARM) user facility, we sampled PM and surface soil materials at the Southern Great Plains observatory (SGP; 36° 36′ 18″ N, 97° 29′ 6″ W) to systematically compare the INP abundance and ice nucleation efficiency of different SGP samples (i.e., airborne versus surface materials). The field campaign, named Examing INP from SGP II (ExINP-SGP II), was conducted from 20 January to 20 April, 2021. Our data analysis products include (1) physical surface sorption characterization data (i.e., BET, pore volume) of two sets of samples -- SGP Soil and USDA, (2) X-ray diffraction spectra for the same two samples, (3) immersion freezing assay-based ice nucleation active mass density data as a function of freezing temperature for both ambient and surface samples, and (4) time-series data of ambient meteorological conditions, concentration particle counter-derived aerosol particle concentration, and aerosol particle sizer measurement during ExINP-SGP II.

3Flex,BET specific surface area and pore volume, A↗

ARM Data for Examining the Ice-Nucleating Particles from SGP Part II (ExINP-SGP II) X-Ray Diffraction

Knowledge of airborne particulate matter (PM), especially the particles that have supermicron diameters, is key for understanding ice-nucleating particles (INPs). Supported by the Atmospheric Radiation Measurement (ARM) user facility, we sampled PM and surface soil materials at the Southern Great Plains observatory (SGP; 36° 36′ 18″ N, 97° 29′ 6″ W) to systematically compare the INP abundance and ice nucleation efficiency of different SGP samples (i.e., airborne versus surface materials). The field campaign, named Examing INP from SGP II (ExINP-SGP II), was conducted from 20 January to 20 April, 2021. Our data analysis products include (1) physical surface sorption characterization data (i.e., BET, pore volume) of two sets of samples -- SGP Soil and USDA, (2) X-ray diffraction spectra for the same two samples, (3) immersion freezing assay-based ice nucleation active mass density data as a function of freezing temperature for both ambient and surface samples, and (4) time-series data of ambient meteorological conditions, concentration particle counter-derived aerosol particle concentration, and aerosol particle sizer measurement during ExINP-SGP II.

54 ENVIRONMENTAL SCIENCES↗

ARM Data for Examining the Ice-Nucleating Particles from SGP Part II (ExINP-SGP II) Cryogenic Refrigerator Applied to Freezing Test

Knowledge of airborne particulate matter (PM), especially the particles that have supermicron diameters, is key for understanding ice-nucleating particles (INPs). Supported by the Atmospheric Radiation Measurement (ARM) user facility, we sampled PM and surface soil materials at the Southern Great Plains observatory (SGP; 36° 36′ 18″ N, 97° 29′ 6″ W) to systematically compare the INP abundance and ice nucleation efficiency of different SGP samples (i.e., airborne versus surface materials). The field campaign, named Examing INP from SGP II (ExINP-SGP II), was conducted from 20 January to 20 April, 2021. Our data analysis products include (1) physical surface sorption characterization data (i.e., BET, pore volume) of two sets of samples -- SGP Soil and USDA, (2) X-ray diffraction spectra for the same two samples, (3) immersion freezing assay-based ice nucleation active mass density data as a function of freezing temperature for both ambient and surface samples, and (4) time-series data of ambient meteorological conditions, concentration particle counter-derived aerosol particle concentration, and aerosol particle sizer measurement during ExINP-SGP II.

54 ENVIRONMENTAL SCIENCES↗

ARM Data for Examining the Ice-Nucleating Particles from SGP Part II (ExINP-SGP II) Aerodynamic Particle Sizer, Condensation Particle Counter, and Meteorological Instrument Data Analysis

Knowledge of airborne particulate matter (PM), especially the particles that have supermicron diameters, is key for understanding ice-nucleating particles (INPs). Supported by the Atmospheric Radiation Measurement (ARM) user facility, we sampled PM and surface soil materials at the Southern Great Plains observatory (SGP; 36° 36′ 18″ N, 97° 29′ 6″ W) to systematically compare the INP abundance and ice nucleation efficiency of different SGP samples (i.e., airborne versus surface materials). The field campaign, named Examing INP from SGP II (ExINP-SGP II), was conducted from 20 January to 20 April, 2021. Our data analysis products include (1) physical surface sorption characterization data (i.e., BET, pore volume) of two sets of samples -- SGP Soil and USDA, (2) X-ray diffraction spectra for the same two samples, (3) immersion freezing assay-based ice nucleation active mass density data as a function of freezing temperature for both ambient and surface samples, and (4) time-series data of ambient meteorological conditions, concentration particle counter-derived aerosol particle concentration, and aerosol particle sizer measurement during ExINP-SGP II.

54 ENVIRONMENTAL SCIENCES↗

The Brm-HDAC3-Erm repressor complex suppresses dedifferentiation in Drosophila type II neuroblast lineages

The control of self-renewal and differentiation of neural stem and progenitor cells is a crucial issue in stem cell and cancer biology. Drosophila type II neuroblast lineages are prone to developing impaired neuroblast homeostasis if the limited self-renewing potential of intermediate neural progenitors (INPs) is unrestrained. Here, we demonstrate that Drosophila SWI/SNF chromatin remodeling Brahma (Brm) complex functions cooperatively with another chromatin remodeling factor, Histone deacetylase 3 (HDAC3) to suppress the formation of ectopic type II neuroblasts. We show that multiple components of the Brm complex and HDAC3 physically associate with Earmuff (Erm), a type II-specific transcription factor that prevents dedifferentiation of INPs into neuroblasts. Consistently, the predicted Erm-binding motif is present in most of known binding loci of Brm. Furthermore, brm and hdac3 genetically interact with erm to prevent type II neuroblast overgrowth. Thus, the Brm-HDAC3-Erm repressor complex suppresses dedifferentiation of INPs back into type II neuroblasts.

59 BASIC BIOLOGICAL SCIENCES↗

Velocity overshoot effect on a short-gate microwave MESFET

The device parameters of short-gate GaAs and InP FETs have been found to be dependent on the nonequilibrium velocity overshoot phenomenon. Both saturation velocity and critical field are found to be larger for shorter gates. The v-E characteristics of Pucel et al. (1975) are modified. The cutoff frequency and other parameters for GaAs, InP, and Si are given as a function of gate length and bias. The cutoff frequency of InP MESFETs with a doping density of 10 to the 17th per cu cm is only 20% higher than those of equivalent GaAs MESFETs at 300 K. Comparison with other work is also presented.

Wang, Y.-C.↗

Potential for use of indium phosphide solar cells in the space radiation environment

Indium phosphide solar cells were observed to have significantly higher radiation resistance than either GaAs or Si after exposure to 10 MeV proton irradiation data and previous 1 MeV electron data together with projected efficiencies for InP, it was found that these latter cells produced more output power than either GaAs or Si after specified fluences of 10 MeV protons and 1 MeV electrons. Estimates of expected performance in a proton dominated space orbit yielded much less degradation for InP when compared to the remaining two cell types. It was concluded that, with additional development to increase efficiency, InP solar cells would perform significantly better than either GaAs or Si in the space radiation environment.

Weinberg, I.↗

Indium phosphide solar cells: status and prospects for use in space

The current status of indium phosphide cell research is reviewed and state of the art efficiencies compared to those of GaAs and Si. It is shown that the radiation resistance of InP cells is superior to that of either GaAs or Si under 1 MeV electron and 10 MeV proton irradiation. Using lightweight blanket technology, a SEP array structure and projected cell efficiencies, array specific powers are obtained for all three cell types. Array performance is calculated as a function of time in orbit. The results indicate that arrays using InP cells can outperform those using GaAs or Si in orbits where radiation is a significant cell degradation factor. It is concluded that InP solar cells are excellent prospects for future use in the space radiation environment.

Weinberg, I.↗

Indium phosphide solar cells - Status and prospects for use in space

The current status of indium phosphide cell research is reviewed and state of the art efficiencies compared to those of GaAs and Si. It is shown that the radiation resistance of InP cells is superior to that of either GaAs or Si under 1 MeV electron and 10 MeV proton irradiation. Using lightweight blanket technology, a SEP array structure and projected cell efficiencies, array specific powers are obtained for all three cell types. Array performance is calculated as a function of time in orbit. The results indicate that arrays using InP cells can outperform those using GaAs or Si in orbits where radiation is a significant cell degradation factor. It is concluded that InP solar cells are excellent prospects for future use in the space radiation environment.

Weinberg, I.↗

Indium phosphide solar cell research in the US: Comparison with nonphotovoltaic sources

Highlights of the InP solar cell research program are presented. Homojunction cells with AMO efficiences approaching 19 percent were demonstrated while 17 percent was achieved for indium tin oxide (ITO)/InP cells. The superior radiation resistance of these latter two cell configurations over both Si and GaAs were demonstrated. InP cells on board the LIPS III satellite show no degradation after more than a year in orbit. Computer modeling calculations were directed toward radiation damage predictions and the specification of concentrator cell parameters. Computed array specific powers, for a specific orbit, are used to compare the performance of an InP solar cell array to solar dynamic and nuclear systems.

Weinberg, I.↗

Plasma deposited silicon nitride for indium phosphide encapsulation

The composition and the annealing characteristics of plasma-deposited silicon-nitride encapsulating films on the ion-implanted InP substrates were investigated, using two different substrate-cleaning procedures (organic solvents and HF or HIO3 solutions) prior to encapsulation. The effect of plasma deposition of silicon nitride on the InP substrates was assessed through the current-voltage characteristics of Schottky diodes. Results of XPS analyses showed that the cleaning procedure that employed HF solution left less oxygen on the InP surface than the procedure involving HIO3. No chemical interaction between the film and the substrate was observed before or after annealing.

Valco, G. J.↗

Electron-beam induced damage in thin insulating films on compound semiconductors

Phosphorus rich plasma enhanced chemical vapor deposition (PECVD) of silicon nitride and silicon dioxide films on n-type indium phosphide (InP) substrates were exposed to electron-beam irradiation in the 5 to 40 keV range for the purpose of characterizing the damage induced in the dielectric. The electron-beam exposure was on the range of 10(exp -7) to 10(exp -3) C/sq cm. The damage to the devices was characterized by capacitance-voltage (C-V) measurements of the metal insulator semiconductor (MIS) capacitors. These results were compared to results obtained for radiation damage of thermal silicon dioxide on silicon (Si) MOS capacitors with similar exposures. The radiation induced damage in the PECVD silicon nitride films on InP was successfully annealed out in an hydrogen/nitrogen (H2/N2) ambient at 400 C for 15 min. The PECVD silicon dioxide films on InP had the least radiation damage, while the thermal silicon dioxide films on Si had the most radiation damage.

Pantic, Dragan M.↗

An analysis of the contact sintering process in III-V solar cells

The possibility of eliminating the gross mechanical changes that take place during sintering while retaining the processes that reduce contact resistivity is investigated. Before considering the electrical aspects, however, it is necessary to understand the relevant metallurgy. As the sintering process proceeds in the InP-Au system, dramatic color changes occur that enable a precise measurement of the kinetics of each step. A detailed insight into the processes that control each stage in the InP-Au interaction has resulted. It is shown that contact sintering in the InP-Au system consists of three consecutive stages, each of which is controlled by a separate mechanism.

Weizer, Victor G.↗

Predicted performance of near-optimally designed indium phosphide space solar cells at high intensities and temperatures

The authors calculated the expected performance dependence of near-optimally designed shallow homojunction n+pp+ InP solar cells on incident intensities up to 200 AM0 and temperatures up to 100 deg C (373 K). Both circular and rectangular cells were considered, the former for use in a Cassegrainian concentrator array at 100 AM0, 80-100 deg C and the latter for use in a Slats concentrator array at 20 AM0, 80-100 deg C. With efficiencies near 22 percent at 80 deg C, both the circular and rectangular InP shallow homojunction solar cells compare very favorably to GaAs cells of the same design and may be preferable to the GaAs cells for space applications because of the superior radiation tolerance of the InP cells.

Goradia, Chandra↗

Effect of emitter parameter variation on the performance of heteroepitaxial indium phosphide solar cells

Metallorganic chemical-vapor-deposited heteroepitaxial indium phosphide (InP) solar cell experimental results were simulated by using a PC-1D computer model. The effect of emitter parameter variation on the performance of n(+)/p/p(+) heteroepitaxial InP/GaAs solar cell was presented. The thinner and lighter doped emitters were observed to offer higher cell efficiencies. The influence of emitter thickness and minority carrier diffusion length on the cell efficiency with respect to dislocation density was studied. Heteroepitaxial cells with efficiencies similar to present day homojunction InP efficiencies (greater than 16 percent AMO) were shown to be attainable if a dislocation density lower than 10(exp 6)/sq cm could be achieved. A realistic optimized design study yielded InP solar cells of over 22 percent AMO efficiency at 25 C.

Jain, Raj K.↗