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The physical properties of Li-doped g-C{sub 3}N{sub 4} monolayer sheet investigated by the first-principles

Highlights: • Systematically research on Li-doped g-C{sub 3}N{sub 4} monolayer sheets by first-principles calculation. • Optimal dopant concentration for optical absorption is 7.12%. • Thermodynamics stability of the doped substrate g-C{sub 3}N{sub 4} decreased with Li dopant concentration increasing. • The values of work function Φ decreased monotonously with the increasing of Li dopant concentration. - Abstract: The geometric, electronic, optical properties, thermodynamic stability, and work function of Li-doped g-C{sub 3}N{sub 4} monolayer were investigated by the first-principles calculation. It was found that the Li atoms were preferentially substituted the open-hollow sites of g-C{sub 3}N{sub 4}. Interestingly, the “odd” number of Li doped g-C{sub 3}N{sub 4} showed metallic properties, while the “even” number of Li atoms widened the band gap of g-C{sub 3}N{sub 4}. The HOMO and LUMO distributions reveal that the active sites located at edge N and C atoms for both pristine and the Li-doped g-C{sub 3}N{sub 4}. In addition, thermodynamic analysis showed that the doped Li atoms reduced the thermodynamic stability of g-C{sub 3}N{sub 4} monolayer sheets.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Physical and optical properties of Co{sup 2+}, Ni{sup 2+} doped 20ZnO + xLi{sub 2}O + (30 − x)K{sub 2}O + 50B{sub 2}O{sub 3} (5 ≤ x ≤ 25) glasses: Observation of mixed alkali effect

Graphical abstract: Composition dependence of density and Urbach energy of Co{sup 2+} and Ni{sup 2+} doped ZLKB glasses: (a) Co{sup 2+} doped glasses and (b) Ni{sup 2+} doped glasses. Both are exhibited mixed alkali effect. Highlights: ► Mixed alkali effect is observed. ► Band gap studies indicate that the glasses are structural stable. ► The glasses are observed to be partially covalent in nature. -- Abstract: Co{sup 2+} and Ni{sup 2+} ions doped 20ZnO + xLi{sub 2}O + (30 − x) K{sub 2}O + 50B{sub 2}O{sub 3} (5 ≤ x ≤ 25) mol% glasses are prepared using melt quenching technique. Structural changes of the prepared glasses by addition of transition metal oxides, CoO and NiO are investigated by UV–vis–NIR, FT-IR spectroscopy and XRD. The XRD pattern indicates the amorphous nature of prepared glasses. FT-IR measurements of the all glasses revealed that the network structure of the glasses are mainly based on BO{sub 3} and BO{sub 4} units placed in different structural groups in which the BO{sub 3} units being dominant. The optical absorption spectra suggest the site symmetry of Co{sup 2+} and Ni{sup 2+} ions in the glasses are near octahedral. Crystal field and inter-electronic repulsion parameters are also evaluated. The optical band gap and Urbach energies exhibited the mixed alkali effect. Various physical parameters such as density, refractive index, optical dielectric constant, polaron radius, electronic polarizability and inter-ionic distance are also determined.

36 MATERIALS SCIENCE↗

Structural and optical properties of Sm{sup 3+}-doped borate glasses for luminescent applications

In this work, most interesting optical investigations are carried out with the glass composition (20 − x) CdCO{sub 3} + 15 Li{sub 2}CO{sub 3} + 15 Na{sub 2}CO{sub 3} + 50 H{sub 3}BO{sub 3} + xSm{sub 2}O{sub 3} (where x = 0.1, 0.5, 1.0, 3.0, 4.0 and 5.0 mol%) prepared with conservative melt-quenching technique. DSC verifies the annealing temperature and thermal stability of the prepared glass. X-ray diffraction technique is employed to inspect the amorphous structure of the glasses. FTIR technique helps to view the vibrational band positions of the host material. For optical studies, optical absorption and emission measurements are used. From the absorption spectra, Judd–Ofelt (JO) parameters (Ω{sub 2}, Ω{sub 4}, Ω{sub 6}), rms value of oscillator strength (δ{sub rms}), nephelauxetic parameter ( β-bar ), bonding parameter (δ) and optical band gaps are evaluated. Radiative properties such as radiative transition probabilities (A{sub T}), branching ratios (β{sub cal}, β{sub exp}) and stimulated emission cross section (σ{sub emi}) are calculated using JO theory. The higher stimulated emission cross section (14.39 × 10{sup −22} cm{sup 2}), optical gain (36.69 × 10{sup −25} cm{sup 2} s) indicate that 1.0 mol% of Sm{sup 3+}-doped borate glass would be a potential gain medium for solid state laser application at 603 nm. Color coordinates of the glasses located in the reddish-orange region could be useful for white light-emitting application.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

CuTaS 3 : Intermetal d–d Transitions Enable High Solar Absorption

To realize the fundamental limits of photovoltaic device efficiency, solar absorbers must exhibit strong absorption and abrupt absorption onsets. Ideally, onsets to maximum absorption (a > 105 cm-1) occur over a few tenths of an electronvolt. First-principles calculations predict CuTaS3 represents a potentially new class of materials with such absorption characteristics. Narrow metallic d bands in both the initial and final states present high joint densities of states and, therefore, strong absorption. Specifically, a mixture of metal d (Cu1+, d10) and S p characterizes states near the valence band maximum, and metal d (Ta5+, d0) dominates near the conduction band minimum. Optical absorption measurements on thin films confirm the abrupt onset to strong absorption a > 105 cm-1 at Eg + 0.4 eV (Eg = 1.0 eV). Theoretical CuTaS3 solar cell efficiency is predicted to be 28% for a 300 nm film based on the metric of spectroscopic limited maximum efficiency, which exceeds that of CuInSe2. This sulfide may offer new opportunities to discover and develop a new class of mixed d-element solar absorbers.

14 SOLAR ENERGY↗

Design of Radial pin Si Nanowires for High Performance Solar Cells

The quantum efficiency of solar cells, like of any photon detector, is dictated by the ability to absorb photons to create conducting carriers, and the efficiency to drive such carriers to electrodes for collection. Having a medium that enables full photon absorption in a short length, together with a long carrier lifetime that allows photo-generated carriers to reach electrodes before recombining are ideal, but are not always realistic. For example, silicon photovoltaics, despite being a major player in the solar cell market, suffer from the low absorption coefficient, thus requiring a thick absorbing layer which impairs the efficiency with which photogenerated carriers are collected. Radial silicon nanowires have been proposed as a candidate for reducing the optical absorption length and required processing purity in Si based solar cells without compromising their quantum efficiency and yet reducing the overall cell cost. On the one hand, incident light propagates along the axial dimension of the wires, and thus has a greater chance of being absorbed when the wire length extends beyond 10m due to inter-array light scattering effects. On the other hand, the core/shell p-i-n structure leads electrical current flow along sub-micron radii, which enables rapid collection of most photogenerated carriers as the transport length is typically less than the diffusion lengths of minority carriers. In this work, we perform Finite Difference Time Domain (FDTD) simulation to investigate the absorption process in arrayed radial nanowires.

ABSORPTION↗

Photoconductivity in reactively evaporated copper indium selenide thin films

Copper indium selenide thin films of composition CuInSe{sub 2} with thickness of the order of 130 nm are deposited on glass substrate at a temperature of 423 ±5 K and pressure of 10{sup −5} mbar using reactive evaporation, a variant of Gunther's three temperature method with high purity Copper (99.999%), Indium (99.999%) and Selenium (99.99%) as the elemental starting materials. X-ray diffraction (XRD) studies shows that the films are polycrystalline in nature having preferred orientation of grains along the (112) plane. The structural type of the film is found to be tetragonal with particle size of the order of 32 nm. The structural parameters such as lattice constant, particle size, dislocation density, number of crystallites per unit area and strain in the film are also evaluated. The surface morphology of CuInSe{sub 2} films are studied using 2D and 3D atomic force microscopy to estimate the grain size and surface roughness respectively. Analysis of the absorption spectrum of the film recorded using UV-Vis-NIR Spectrophotometer in the wavelength range from 2500 nm to cutoff revealed that the film possess a direct allowed transition with a band gap of 1.05 eV and a high value of absorption coefficient (α) of 10{sup 6} cm{sup −1} at 570 nm. Photoconductivity at room temperature is measured after illuminating the film with an FSH lamp (82 V, 300 W). Optical absorption studies in conjunction with the good photoconductivity of the prepared p-type CuInSe{sub 2} thin films indicate its suitability in photovoltaic applications.

36 MATERIALS SCIENCE↗

Isothermal sections of the quasi-ternary systems Ag{sub 2}S(Se)–Ga{sub 2}S(Se){sub 3}–In{sub 2}S(Se){sub 3} at 820 K and the physical properties of the ternary phases Ga{sub 5.5}In{sub 4.5}S{sub 15}, Ga{sub 6}In{sub 4}Se{sub 15} and Ga{sub 5.5}In{sub 4.5}S{sub 15}:Er{sup 3+}, Ga{sub 6}In{sub 4}Se{sub 15}:Er{sup 3+}

Isothermal sections of the quasi-ternary systems Ag{sub 2}S(Se)–Ga{sub 2}S(Se){sub 3}–In{sub 2}S(Se){sub 3} at 820 K were compared. Along the 50 mol% Ag{sub 2}S(Se), both systems feature continuous solid solutions with the chalcopyrite structure. Along the 17 mol% Ag{sub 2}S(Se), the interactions at the AgIn{sub 5}S(Se){sub 8}–'AgGa{sub 5}S(Se){sub 8}' sections are different. In the Ag{sub 2}S–Ga{sub 2}S{sub 3}–In{sub 2}S{sub 3} system the existence of the layered phase AgGa{sub x}In{sub 5–x}S{sub 8}, 2.25≤x≤2.85, was confirmed (S.G. P6{sub 3}mc). The Ag{sub 2}Se–Ga{sub 2}Se{sub 3}–In{sub 2}Se{sub 3} system features the formation of solid solution (up to 53 mol% Ga{sub 2}Se{sub 3}) based on AgIn{sub 5}Se{sub 8} (S.G. P-42m). Crystal structure, atomic coordinates were determined by powder diffraction method for samples from the homogeneity region of AgIn{sub 5}Se{sub 8}. Specific conductivities of the crystals Ga{sub 6}In{sub 4}Se{sub 15} (1.33·10{sup −6} Ω{sup −1} m{sup −1}), Ga{sub 5.94}In{sub 3.96}Er{sub 0.1}Se{sub 15} (3.17·10{sup −6} Ω{sup −1} m{sup −1}), Ga{sub 5.5}In{sub 4.5}S{sub 15} (7.94·10{sup −6} Ω{sup −1} m{sup −1}), Ga{sub 5.46}In{sub 4.47}Er{sub 0.07}S{sub 15} (1·10{sup −9} Ω{sup −1} m{sup −1}) were measured at room temperature. Optical absorption and photoconductivity spectra were recorded in the range 400–760 nm. The introduction of erbium leads to an increase in the absorption coefficient and to the appearance of absorption bands at 530, 660, 810, 980, 1530 nm. - Highlights: • Nature of solid solutions in Ag{sub 2}S(Se)–Ga{sub 2}S(Se){sub 3}–In{sub 2}S(Se){sub 3} (820 K) were discussed. • Crystal structures of ternary and quaternary compounds were discussed. • Specific conductivity, optical properties of four single crystals were measured. • Photoconductivity of the Ga{sub 5.5}In{sub 4.5}S{sub 15} in the range 400–760 nm were recorded.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Plasmonic Control of Radiation and Absorption Processes in Semiconductor Quantum Dots

This document reviews a research program funded by the DOE Office of Science, which has been focused on the control of radiation and absorption processes in semiconductor photonic materials (including III-nitride quantum wells and quantum dots), through the use of specially designed metallic nanoparticles (NPs). By virtue of their strongly confined plasmonic resonances (i.e., collective oscillations of the electron gas), these nanostructures can concentrate incident radiation into sub-wavelength “hot spots” of highly enhanced field intensity, thereby increasing optical absorption by suitably positioned absorbers. By reciprocity, the same NPs can also dramatically increase the spontaneous emission rate of radiating dipoles located within their hot spots. The NPs can therefore be used as optical antennas to enhance the radiation output of the underlying active material and at the same time control the far-field pattern of the emitted light. The key accomplishments of the project include the demonstration of highly enhanced light emission efficiency as well as plasmonic collimation and beaming along geometrically tunable directions, using a variety of plasmonic excitations. Initial results showing the reverse functionality (i.e., plasmonic unidirectional absorption and photodetection) have also been generated with similar systems. Furthermore, a new paradigm for the near-field control of light emission has been introduced through rigorous theoretical studies, based on the use of gradient metasurfaces (i.e., optical nanoantenna arrays with spatially varying shape, size, and/or orientation). These activities have been complemented by materials development efforts aimed at the synthesis of suitable light-emitting samples by molecular beam epitaxy. In the course of these efforts, a novel technique for the growth of III-nitride quantum dots has also been developed (droplet heteroepitaxy), with several potential advantages in terms of compositional and geometrical control. The results of these studies provide fundamental new understanding of optical processes at the nanoscale, including near-field energy transfer between quantum emitters and photonic nanostructures, dissipation phenomena of plasmonic excitations, and radiation from nanoantennas. Furthermore, they may open the way to entirely new device concepts and applications, in a broad range of disciplines including optoelectronics, sensing, spectroscopy, photovoltaics, and quantum information science. A specific application of particularly strong relevance to the DOE mission is the development of energy efficient LED active materials for solid-state lighting, based on plasmonic enhancement effects.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Na{sub 2}Ge{sub 2}Se{sub 5}: A highly nonlinear optical material

We report an integrated experimental and theoretical study of the two-dimensional polar selenogermanate compound Na{sub 2}Ge{sub 2}Se{sub 5}, which exhibits strong nonlinear optical (NLO) second harmonic generation response in the visible and infrared region. The compound is type-I phase-matchable with a large SHG coefficient {chi}{sup (2)} Almost-Equal-To 290 pm V{sup -1}, which is the second highest among the phase-matchable NLO materials. It also performs as an NLO frequency mixer to produce radiation via difference frequency generation. The compound is optically transparent from the visible (0.521 {mu}m) to the far IR (18.2 {mu}m) and melts congruently. Ab initio density functional theory band structure calculations show that the unusually large second-order optical nonlinearity is attributed to the two-dimensional character of the crystal structure. Raman, IR and optical absorption spectroscopy, differential thermal analysis, NLO properties of derivatives of Na{sub 2}Ge{sub 2}Se{sub 4.55}Te{sub 0.45} and Na{sub 2}Ge{sub 1.64}Sn{sub 0.36}Se{sub 5} and thermal expansion behavior studies are also reported. - Graphical Abstract: Na{sub 2}Ge{sub 2}Se{sub 5} is a new second-order nonlinear optical material for IR applications. It is type-I phase-matchable with a large SHG coefficient {chi}{sup (2)} Almost-Equal-To 290 pm V{sup -1}, which is the second largest among the phase-matchable NLO materials. Highlights: Black-Right-Pointing-Pointer Na{sub 2}Ge{sub 2}Se{sub 5} is a new second-order nonlinear optical material for IR applications. Black-Right-Pointing-Pointer It is type-I phase-matchable. Black-Right-Pointing-Pointer Its SHG coefficient {chi}{sup (2)} Almost-Equal-To 290 pm V{sup -1} is the second largest among the phase-matchable NLO materials. Black-Right-Pointing-Pointer Its DFG performance allows the development of a multiple IR frequency source with tunability. Black-Right-Pointing-Pointer Ab initio density functional theory band structure calculations show that the unusually large second-order optical nonlinearity is attributed to the 2-D character of the crystal structure.

36 MATERIALS SCIENCE↗

Origins of the odd optical observables in plutonium and americium tungstates

A series of trivalent f-block tungstates, MW 2 O 7 (OH)(H 2 O) (M = La, Ce, Pr, Nd, and Pu) and AmWO 4 (OH), have been prepared in crystalline form using hydrothermal methods. Both structure types take the form of 3D networks where MW 2 O 7 (OH)(H 2 O) is assembled from infinite chains of distorted tungstate octahedra linked by isolated MO 8 bicapped trigonal prisms; whereas AmWO 4 (OH) is constructed from edge-sharing AmO 8 square antiprisms connected by distorted tungstate trigonal bipyramids. PuW 2 O 7 (OH)(H 2 O) crystallizes as red plates; an atypical color for a Pu( III ) compound. Optical absorption spectra acquired from single crystals show strong, broadband absorption in the visible region. A similar feature is observed for CeW 2 O 7 (OH)(H 2 O), but not for AmWO 4 (OH). Here we demonstrate that these significantly different optical properties do not stem directly from the 5f electrons, as in both systems the valence band has mostly O-2p character and the conduction band has mostly W-5d character. Furthermore, the quasi-particle gap is essentially unaffected by the 5f degrees of freedom. Despite this, our analysis demonstrates that the f-electron covalency effects are quite important and substantially different energetically in PuW 2 O 7 (OH)(H 2 O) and AmWO 4 (OH), indicating that the optical gap alone cannot be used to infer conclusions concerning the f electron contribution to the chemical bond in these systems.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

Electronic and optical properties of mixed perovskites CsSn{sub x}Pb{sub (1−x)}I{sub 3}

The electronic structure and optical properties of the new solar cells absorber material: mixed perovskites CsSn{sub x}Pb{sub (1−x)}I{sub 3} are studied by the first-principle calculations with mBJ + SOC (modified Beak Johnson approximation plus spin-orbit coupling) method. The band gap of the serial of compounds almost quasi-linearly reduces with increasing Sn content from 0.96 eV (x = 0) to 0.16 eV (x = 1). Optical absorption coefficient revealed a progressive red shift with the increment of the Sn content, accompanying with the absorption edge broadening. The absorption coefficient and Ideal Power Absorption Coefficient (IPAC) increase greatly with the Pb atoms being partially substituted by Sn atoms. The pure CsSnI{sub 3} has the highest IPAC, but it is unstable in the air because the Sn{sup 2+} will be oxidized to Sn{sup 4+}. So our results indicate that partially substituted CsSn{sub x}Pb{sub (1−x)}I{sub 3} might be the good solar cell absorption material.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Relationship between the Optical Damage Resistance and Radiation Hardness and the Influence of Threshold Effects on the Radiation Hardness of ZnO-Doped LiNbO{sub 3} Crystals

The radiation hardness and optical characteristics of beta-and gamma-irradiated LiNbO{sub 3}〈ZnO〉 crystals have been studied in a wide range of doping levels: ~0.04–5.9 mol % ZnO. The optical absorption (transmission) of the beta-and gamma-irradiated LiNbO{sub 3}〈ZnO〉 crystals has been evaluated as a function of the type and dose of radiation and dopant concentration. The optical damage resistance and radiation hardness of the crystals have been shown to be interrelated and depend on threshold effects in the LiNbO{sub 3}〈ZnO〉 crystals.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

The Energy Spectrum and Optical Properties of Fullerene C{sub 70} within the Hubbard Model

The energy spectrum of fullerene C{sub 70} is calculated within the Hubbard model in the mean-field approximation. Using group-theory methods, irreducible representations are determined that correspond to the energy states, as well as allowed transitions in the energy spectrum of fullerene C{sub 70}. On the basis of this spectrum, an interpretation of experimentally observed optical absorption bands of fullerene C{sub 70} is proposed.

74 ATOMIC AND MOLECULAR PHYSICS↗

Implementation of real‐time TDDFT for periodic systems in the open‐source PySCF software package

Abstract We present a new implementation of real‐time time‐dependent density functional theory (RT‐TDDFT) for calculating excited‐state dynamics of periodic systems in the open‐source Python‐based PySCF software package. Our implementation uses Gaussian basis functions in a velocity gauge formalism and can be applied to periodic surfaces, condensed‐phase, and molecular systems. As representative benchmark applications, we present optical absorption calculations of various molecular and bulk systems and a real‐time simulation of field‐induced dynamics of a (ZnO) 4 molecular cluster on a periodic graphene sheet. We present representative calculations on optical response of solids to infinitesimal external fields as well as real‐time charge‐transfer dynamics induced by strong pulsed laser fields. Due to the widespread use of the Python language, our RT‐TDDFT implementation can be easily modified and provides a new capability in the PySCF code for real‐time excited‐state calculations of chemical and material systems.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗

VUV 157nm laser ablation of spherical particles and modelling of whispering gallery mode optical antenna structures

We report on VUV 157nm F{sub 2} laser irradiation of CR-39 polymer substrates that have been intentionally seeded with spherical glass particles. We discuss the importance of adhesive forces for realizing spherical cavity structures by laser ablation. Strong optical absorption at 157nm in CR-39 enables precise control of pedestal height by controlling the laser fluence and the number of laser pulses. Resonant modes for free-standing spherical cavities have been calculated and we discuss briefly the potential applications for use as optical sources on-board lab-on-chip devices.

36 MATERIALS SCIENCE↗

Universal modal radiation laws for all thermal emitters

Significance Radiation laws must relate the fraction of incident radiation absorbed by an object and the amount of radiation emitted when it is hot so that objects can come to the same temperature just by exchanging electromagnetic radiation. Such laws are fundamentally important and set limits to practical applications such as in the conversion of light to electricity and in heat and thermal management generally. Kirchhoff’s classic results work well in many situations, but fail in others (specifically for “nonreciprocal” materials), and were derived using simplified models that do not apply to modern nanotechnology and light beams. We derive revised versions of laws that avoid these problems and discover additional and unexpected radiation laws that substantially expand the fundamental relations between optical absorption and emission.

73 NUCLEAR PHYSICS AND RADIATION PHYSICS↗

Pulsed chemical vapor deposition of Cu{sub 2}S into a porous TiO{sub 2} matrix

Chalcocite (Cu{sub 2}S) has been deposited via pulsed chemical vapor deposition (PCVD) into a porous TiO{sub 2} matrix using hydrogen sulfide and a metal-organic precursor. The precursor used is similar to the more common Cu(hfac)(tmvs) precursor, but it is fluorine free and exhibits increased thermal stability. The simultaneous exposure of the substrate to the copper precursor and hydrogen sulfide resulted in nonuniform Cu{sub 2}S films with a temperature independent deposition rate implying gas phase reaction kinetics. The exposure of mesoporous TiO{sub 2} and planar ZnO to alternating cycles of the copper precursor and hydrogen sulfide resulted in a PCVD film that penetrated fully into the porous TiO{sub 2} layer with a constant deposition rate of 0.08 nm/cycle over a temperature range of 150-400 deg. C The chalcocite (Cu{sub 2}S) stoichiometry was confirmed with extended x-ray absorption fine structure measurements (EXAFS) and x-ray photoelectron spectroscopy. Calculations of the EXAFS spectrum for different Cu{sub x}S phases show that EXAFS is sensitive to the different phase stoichiometries. Optical absorption measurements of CVD thin films using photothermal deflection spectroscopy show the presence of a metallic copper-poor phase for gas phase nucleated films less than 100 nm thick and a copper-rich semiconducting phase for thicknesses greater than 100 nm with a direct band gap of 1.8 eV and an indirect bandgap of 1.2 eV.

36 MATERIALS SCIENCE↗

The effect of carbon on surface quality of solid-state-sintered silicon carbide as optical materials

The microstructure and the distribution of carbon (C) in silicon carbide (SiC) ceramics were investigated by scanning electron microscopy and transmission electron microscopy. The results show that C can restrain the growth of SiC grains and densify SiC ceramics with the increase of the C content, but residual C introduces a new phase-C to SiC ceramics. The hardness of C is less than that of SiC, so it's difficult to be polished as optical materials. The existence of C phase doesn't lead to the increase of surface roughness on SiC optical materials, but it leads to the decrease of the reflectance of SiC as the optical materials because the optical absorption of C in visible light is stronger than that of SiC. It indicates that C content is very important to the surface properties of SiC, which will affect the coating of chemical vapor deposition SiC or Si on the surface of SiC ceramics because of the different physical and chemical properties between C and SiC. - Highlights: • The microstructure and the distribution of carbon were investigated. • A new phase in the optical materials is introduced. • It is difficult to be polished as the optical materials because of different phases. • Carbon leads to the decrease of reflectance because of its absorption to light wave. • The different properties may affect the coating of chemical vapor deposition on SiC.

36 MATERIALS SCIENCE↗