Search NASA⌕ Search

SEARCH · Search NASA

Results for “SOLID STATE DEVICE”

Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

Quote a phrase for an exact phrase match. Source license links do not imply unrestricted reuse.

At least 577 records · Page 32
All sourcesNASA NTRSDOE OSTI
DOE OSTI2017

Al x In 1-x P LEDs with II-VI Cladding Layers for Efficient Red and Amber Emission. Final Scientific & Technical Report

Realizing solid state lighting systems with high efficiency and enhanced functionality will require the adoption of color-mixing (cm-LEDs) architectures combining highly efficient red, green, blue and amber light emitting diodes. Already, the hybrid architectures (hy-LEDs) pair phosphor-converted wide bandgap nitride LEDs with (Al x Ga 1-x ) 0.51 In 0.49 P red LEDs to improve the emission spectrum and reduce losses in the infrared. However, the efficiencies of (Al x Ga 1-x ) 0.51 In 0.49 P red and amber LEDs are still too low to truly enable these approaches. The DOE Solid-State Lighting R&D Plan highlights red and amber LED improvement as a long-term research goal. Excessive electron leakage out of the cladding layers, in particular, leads to strong thermal droop and red LED efficiencies of ~25% at normal operating temperatures. The typical device architecture for red and amber LEDs is based on indirect bandgap (Al y Ga 1-y ) 0.51 In 0.49 P cladding layers used to confine injected electrons and holes within a lower, direct bandgap (Al x Ga 1-x ) 0.51 In 0.49 P light-emitting active layer (x < y). The challenge with this approach is that the electron confinement is limited and decreases as the emission wavelength is shortened. Hence, thermal droop and overall device efficiency are very poor for amber LEDs. Innovative solutions to this problem must be sought through the use of new semiconductor materials and structures that will increase electron confinement. We plan to develop Al x In 1-x P LEDs with a II-VI semiconductor electron cladding layer to greatly increase the carrier confinement. Such an approach has the potential to improve red and amber LED efficiency, temperature stability, and light extraction. Al x In 1-x P active layers provide high direct bandgap energies needed to reach amber wavelengths without detrimental internal losses. ZnSe-based alloys are attractive candidates for the electron cladding layer because they can be engineered to provide high conduction band energies relative to the Al x In 1-x P active layer while maintaining roughly the same lattice constant. The lower index of refraction of the II-VI cladding layer will also aid light extraction. While extended defects have largely precluded the use of II-VI semiconductors as the light emitting layer in LEDs and lasers, the effects of these defects on device performance can be mitigated by limiting the use of II-VI materials to the thin, heavily doped cladding layer. Proposed research will focus on optimizing the quality of the Al x In 1-x P active layer and the heteropolar growth of the III-V/II-VI interface, tuning the II-VI cladding layer composition, and device design to maximize electron confinement and LED efficiency. Significant improvement in the performance of red and amber LEDs through this new approach is expected to advance the capabilities of next generation solid-state lighting technologies.

36 MATERIALS SCIENCE↗
DOE OSTI2015

Upconversion luminescence in BaMoO{sub 4}:Pr{sup 3+} phosphor for display devices

The frequency upconversion is an important nonlinear optical property by which near infrared light is converted into the visible light. The BaMoO{sub 4}:Pr{sup 3+} powder phosphor has been synthesized by solid state reaction method. The upconversion emission bands are recorded under the excitation of 808 nm diode laser. The phase formation of the prepared phosphor has been identified by powder X-ray diffraction (XRD) technique. The upconversion emission mechanism and colour coordinate have been explained by using energy level and CIE (International Commission on Illumination) chromaticity diagram study, respectively.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Dual-function lignin monomers enable high-performance graphene electrodes via interface confinement and proton transfer enhancement

Graphene oxide (GO)-based energy storage faces dual bottlenecks: unsustainable reduction methods and sluggish proton transfer kinetics. Here, we introduce a groundbreaking green strategy using lignin-derived vanillyl alcohol (VA) as a dual-function monomer to simultaneously address these challenges. By thermally annealing GO/VA films at mild temperatures (<100 °C), VA triggers an interface-confined reduction of GO while self-polymerizing into redox-active oligomers (P-VA) that intercalate between graphene layers. This dual role-reducing agent and proton highway enables a 3D conductive network with minimized graphene restacking, abundant redox sites, and rapid H + transport pathways. Density Functional Theory (DFT) reveals how P-VA optimizes proton dynamics, while the resulting rGO-P-VA4-T90 electrode achieves a record volumetric capacitance of 311.1F/cm 3 (777.8F/cm 2 ) and retains 87.8 % capacity after 10,000 cycles. Flexible solid-state supercapacitors deliver 94.2 μWh/cm 2 energy density at 63.8 μW/cm 2 , rivaling state-of-the-art devices. Furthermore, this work redefines sustainable graphene engineering, merging biomass valorization with high-performance energy storage in a scalable, eco-friendly paradigm.

Graphene oxide reduction↗
DOE OSTI2019

Modeling of all-solid-state thin-film Li-ion batteries: Accuracy improvement

Thin-film Solid-State Batteries (TFSSB) is one of most promising and quickly developing fields in modern electrochemical energy storage. Modeling these devices is interesting from theoretical and practical point of view. This paper represents a simulation approach for TFSSB which overcome a major drawback of available mathematical models, i.e. decline in accuracy of the models at high current rates. A one-dimensional electrochemical model, including charge transfer kinetics on the electrolyte-electrode interface, diffusion and migration in electrolyte as well as diffusion in intercalation electrode has been developed and the simulation results are compared to experimental voltage-capacity measurements. A new definition of diffusion coefficient as a function of concentration, based on the experimental measurements, is used to improve the performance of the model. The simulation results fit the available experimental data at low and high discharge currents up to 5 mA cm -2 . As a result, the models show that the cathode diffusion constant is a prime factor limiting the rate capability for TFSSB in particular for ultrafast charging applications.

25 ENERGY STORAGE↗
DOE OSTI2024

Nasicon dual ion conductors for all solid-state batteries

A super ion conductor composition is disclosed. The super ion conductor composition has the general formula: A 1+x M x/2 Zr 2−x/2 (PO 4 ) 3 , where each A is independently Na or Li, M is Mn or Mg, and subscript x is from 0.5 to 3. A solid electrolyte comprising the super ion conductor composition, and a method of preparing the solid electrolyte, are also disclosed. The method comprises combining a zirconium compound, a manganese or magnesium compound, a sodium compound, and a phosphate compound to give a mixture; and calcining the mixture to give the super ion conductor composition, thereby preparing the solid electrolyte. Functional materials and devices comprising the super ion conductor composition are also disclosed, including a catholyte composition, an ion conducting solid electrolyte membrane, as well as all-solid-state batteries.

Amin, Ruhul↗
DOE OSTI2024

Phase II Final Technical Report | Neutron Dose Tolerant Solid-State Photomultiplier for Nuclear Imaging | Award Number DE-SC0021560 | Prepared for U.S. Department of Energy, Office of Science, SC-1 | For the Period April 4, 2022 – April 3, 2024 | Report Date July 31, 2024 | Submitted by Erik Johnson, Ph.D., Principal Investigator | Report Contributors Erik Johnson, Radiation Monitoring Devices, Inc., 44 Hunt Street, Watertown, MA 02472

Explore the source record for details and available documents.

Johnson, Erik↗
DOE OSTI2015

Surface/interface effects on high-performance thin-film all-solid-state Li-ion batteries

The further development of all-solid-state batteries is still limited by the understanding/engineering of the interfaces formed upon cycling. Here, we correlate the morphological, chemical, and electrical changes of the surface of thin-film devices with Al negative electrodes. The stable Al–Li–O alloy formed at the stress-free surface of the electrode causes rapid capacity fade, from 48.0 to 41.5 μAh/cm 2 in two cycles. Surprisingly, the addition of a Cu capping layer is insufficient to prevent the device degradation. Furthermore, Si electrodes present extremely stable cycling, maintaining >92% of its capacity after 100 cycles, with average Coulombic efficiency of 98%.

25 ENERGY STORAGE↗
DOE OSTI2018

A Review on Low-Grade Thermal Energy Harvesting: Materials, Methods and Devices

Combined rejected and naturally available heat constitute an enormous energy resource that remains mostly untapped. Thermal energy harvesting can provide a cost-effective and reliable way to convert available heat into mechanical motion or electricity. This extensive review analyzes the literature covering broad topical areas under solid-state low temperature thermal energy harvesting. These topics include thermoelectricity, pyroelectricity, thermomagneticity, and thermoelasticity. For each topical area, a detailed discussion is provided comprising of basic physics, working principle, performance characteristics, state-of-the-art materials, and current generation devices. Technical advancements reported in the literature are utilized to analyze the performance, identify the challenges, and provide guidance for material and mechanism selection. The review provides a detailed analysis of advantages and disadvantages of each energy harvesting mechanism, which will provide guidance towards designing a hybrid thermal energy harvester that can overcome various limitations of the individual mechanism.

36 MATERIALS SCIENCE↗
DOE OSTI2022

Wide bandgap semiconductor materials and devices

The technological and societal impacts of electronic devices based on Ge, Si, and compound semiconductors like GaAs have been profound, fueling the decades long quest in identifying ever-larger bandgap semiconductors to untap new applications and possibilities. Specifically, an increase in the bandgap leads to shorter wavelength emission and an increased breakdown electric field, which has direct consequences for solid-state lighting like light-emitting diodes (LEDs) and laser diodes (LDs) from the visible (blue-green, blue, and violet) and beyond (UV and deep-UV) spectral range and for radically improved power devices supported by a higher intrinsic breakdown strength. Wide bandgap (WBG) semiconductors represent the frontier of materials that satisfy these criteria and include group IV, III–V, and II–VI material families like SiC (3.2 eV), GaN (3.4 eV), and ZnO (3.4 eV), respectively. With even larger bandgaps exceeding 4 eV, ultrawide bandgap (UWBG) semiconductors include diamond, III-nitrides incorporating Al and B (e.g., AlN, BN, and AlGaN), and sesquioxides like Ga 2 O 3 and (Al,Ga) 2 O 3 . These materials span widely varying stages of technological maturity, with SiC and GaN platforms among the most mature with commercially available devices in RF and high-power electronics, while other platforms such as Ga 2 O 3 rapidly advancing and poised to enable new UV and deep-UV optoelectronic devices. This Special Topic on Wide Bandgap Semiconductor Materials and Devices covers broad research subtopics on WBG and UWBG materials that span bulk crystals, epitaxy and substrate technologies, fundamental defect science, and doping, as well as electronic and optoelectronic device fabrication and characterization. Here, we highlight works from the collection, which we categorize by material platform of SiC, III-nitrides, and Ga 2 O 3 and related alloys.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Halide Substitution Effects on Lithium-Ion Diffusion in Protonated Antiperovskites

Solid-state electrolytes (SSEs) for all-solid-state lithium-ion batteries are generating intense interest because these batteries can improve the safety and performance compared with devices fabricated with conventional, flammable liquid electrolytes. In these SSEs, it has been suggested that Li + ion diffusion in the grain boundaries is hindered and is a critical determinant of the overall ionic conductivity (σ). However, Li + ion diffusivities in the grain (D G ) and the grain boundary (D GB ) are difficult to determine experimentally, with few techniques capable of distinguishing the individual contributions. Here, we distinguished the D G and D GB for the protonated lithium antiperovskites (pLiAPs) SSEs: Li 2 OHCl, Li 2 OHBr, Li 2 OHF 0.1 Cl 0.9 , Li 2 OHF 0.1 Br 0.9 , and Li 2 OHCl 0.3 7Br 0.63 . The measurements were obtained directly from 7 Li pulsed-field gradient nuclear magnetic resonance (PFG-NMR) at 353 K. The 7 Li PFG-NMR echo profiles were composed of two primary components with additional secondary oscillatory components – the so-called NMR diffraction phenomenon. The length scale separating the two main components corresponds to a diffusion length of ~1.7 µm, which is thought to be the average grain size (by diameter). The short-range (≤ 1.7 µm) diffusion component associated with D G (≈10 -11 m 2 /s) varied minimally with halide substitution, while the long-range (≥ 1.7 µm) component D GB (≈10 -12 to 10 -15 m 2 /s) was highly sensitive to the substitution of halides and closely correlated with s. In addition, from the comparison of the ratio D GB /D G to D t (the Li + ion diffusion coefficient estimated from the rotational correlation time, t c ), it was determined that the contribution of D G to σ is negligible; 0.01 ~ 0.04 in the pLiAPs studied here. Finally, these insights provide fundamental understanding of the halide substitution effects on Li + ion grain versus grain boundary diffusion, and suggest that careful engineering of the grain boundaries at the microscopic level is necessary to achieve high-performance pLiAP SSEs.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2016

High voltage surface potential measurements in ambient conditions: Application to organic thin-film transistor injection and transport characterization

A scanning surface potential measurement technique suited for thin-film devices operating under high voltages is reported. A commercial atomic force microscope has been customized to enable a feedback-controlled and secure surface potential measurement based on phase-shift detection under ambient conditions. Measurements of the local potential profile along the channel of bottom-gate organic thin-film transistors (TFTs) are shown to be useful to disentangle the contributions from the channel and contacts to the device performance. Intrinsic contact current-voltage characteristics have been measured on bottom-gate, top-contact (staggered) TFTs based on the small-molecule semiconductor dinaphtho[2,3-b:2′,3-f]thieno[3,2-b]thiophene (DNTT) and on bottom-gate, bottom-contact (coplanar) TFTs based on the semiconducting polymer polytriarylamine (PTAA). Injection has been found to be linear in the staggered DNTT TFTs and nonlinear in the coplanar PTAA TFTs. In both types of TFT, the injection efficiency has been found to improve with increasing gate bias in the accumulation regime. Contact resistances as low as 130 Ω cm have been measured in the DNTT TFTs. A method that eliminates the influence of bias-stress-induced threshold-voltage shifts when measuring the local charge-carrier mobility in the channel is also introduced, and intrinsic channel mobilities of 1.5 cm{sup 2} V{sup −1} s{sup −1} and 1.1 × 10{sup −3} cm{sup 2} V{sup −1} s{sup −1} have been determined for DNTT and PTAA. In both semiconductors, the mobility has been found to be constant with respect to the gate bias. Despite its simplicity, the Kelvin probe force microscopy method reported here provides robust and accurate surface potential measurements on thin-film devices under operation and thus paves the way towards more extensive studies of particular interest in emerging fields of solid-state electronics.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗
DOE OSTI2019

Discovery of blue singlet exciton fission molecules via a high-throughput virtual screening and experimental approach

Singlet exciton fission is a mechanism that could potentially enable solar cells to surpass the Shockley-Queisser efficiency limit by converting single high-energy photons into two lower-energy triplet excitons with minimal thermalization loss. The ability to make use of singlet exciton fission to enhance solar cell efficiencies has been limited, however, by the sparsity of singlet fission materials with triplet energies above the bandgaps of common semiconductors such as Si and GaAs. Here, we employ a high-throughput virtual screening procedure to discover new organic singlet exciton fission candidate materials with high-energy (>1.4 eV) triplet excitons. After exploring a search space of 4482 molecules and screening them using time-dependent density functional theory, we identify 88 novel singlet exciton fission candidate materials based on anthracene derivatives. Subsequent purification and characterization of several of these candidates yield two new singlet exciton fission materials: 9,10-dicyanoanthracene (DCA) and 9,10-dichlorooctafluoroanthracene (DCOFA), with triplet energies of 1.54 eV and 1.51 eV, respectively. These materials are readily available and low-cost, making them interesting candidates for exothermic singlet exciton fission sensitization of solar cells. However, formation of triplet excitons in DCA and DCOFA is found to occur via hot singlet exciton fission with excitation energies above ~3.64 eV, and prominent excimer formation in the solid state will need to be overcome in order to make DCA and DCOFA viable candidates for use in a practical device.

37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CH↗
DOE OSTI2024

The DAMIC-M Low Background Chamber

The DArk Matter In CCDs at Modane (DAMIC-M) experiment isdesigned to search for light dark matter (m$_{χ}$ < 10 GeV/c$^{2}$)at the Laboratoire Souterrain de Modane (LSM) in France. DAMIC-Mwill use skipper charge-coupled devices (CCDs) as a kg-scale activedetector target. Its single-electron resolution will enable eV-scaleenergy thresholds and thus world-leading sensitivity to a range ofhidden sector dark matter candidates. A DAMIC-M prototype, the LowBackground Chamber (LBC), has been taking data at LSM since2022. The LBC provides a low-background environment, which has beenused to characterize skipper CCDs, study dark current, and measureradiopurity of materials planned for DAMIC-M. It also allows testingof various subsystems like readout electronics, data acquisitionsoftware, and slow control. This paper describes the technicaldesign and performance of the LBC.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2015

Phonon Sensor Dynamics for Cryogenic Dark Matter Search Experiment

Understanding the quasiparticle diffusion process inside sputtered aluminum (Al thin films (∼ 0.1-1 μm is critical for the Cryogenic Dark Matter Search (CDMS experiment to further optimize its detectors to directly search for dark matter. An initial study with Al films was undertaken by our group ∼ 20 years ago, but some important questions were not answered at the time. This thesis can be considered a continuation of that critical study. The CDMS experiment utilizes high purity silicon and germanium crystals to simultaneously measure ionization and phonons created by particle interactions. In addition to describing some of the rich physics involved in simultaneously detecting ionization and phonons with a CDMS detector, this thesis focuses on the detailed physics of the phonon sensors themselves, which are patterned onto CDMS detector surfaces. CDMS detectors use thin sputtered Al films to collect phonon energy when it propagates to the surfaces of the detector crystals. The phonon energy breaks Cooper pairs and creates quasiparticles (qps). These qps diffuse until they get trapped in an proximitized “overlap” region where lower-Tc tungsten films connect to the Al film. These tungsten films are the transition edge sensors (W-TESs CDMS uses to readout phonon signals. We performed a wide range of experiments using several sets of test devices designed and fabricated specifically for this work. The devices were used mostly to study quasiparticle (qp transport in Al films and qp transmission through Al/W interfaces. The results of this work are being used to optimize the design of detectors for SuperCDMS SNOLAB. This thesis is intended for CDMS collaborators who are interested in knowing more about the detailed fundamentals of how our phonon sensors work so they can take full advantage of their benefits. However, this work can also be read by general readers who are interested in particle detection using TES technology. This thesis contains eight chapters. The first chapter gives basic background information about dark matter and searches for it. We then describe the basic CDMS detector technology in Chapter two. Chapter three focuses on superconductivity and explains some of the solid state physic most relevant to our Al and W film studies. We then turn our attention to the fabrication processes used to make test devices, and describe some of the studies done to characterize our W and Al film properties. Chapter five explains the experimental setup including how a 3He/4He dilution refrigerator works, and how our electronics were configured. We then get to chapter six where we present key experimental results. Chapter seven covers the TES model we used for our test devices to simulate the data pulse shapes and reconstruct the pulse energies. We also describe the diffusion models used to fit our data. Finally, we end with a short summary of our findings and provide a few suggestions for future studies.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗