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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 577 records · Page 32
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

A Comprehensive Approach towards Multi-Objective EMI Filter Design Optimization in High-Frequency SiC-Based Motor Drives

With rapid penetration of high-frequency, highdensity power electronics into the industry, controlling the system generated EMI becomes one of the major design challenges. Designing practical optimized EMI filters require simultaneous consideration of multiple aspects - including electromagnetic couplings, magnetic materials, practical component parasitics and their impacts at high-frequencies, and also the overall manufacturing costs. The multi-dimensional nature of the problem often results in overcompensated designs that hurt the system efficiency and power density. This paper focuses on a comprehensive design platform (developed in MATLAB) towards designing high-density, optimized, highly efficient EMI filters by analyzing the generated noise spectrum and evaluating a vast array of potential solutions before outputting an optimized filter solution. The proposed tool includes database-based component selection, optimal topology selection, multistage filter design, overall optimization for volume, mass, cost and total loss. The proposed filter has been thoroughly evaluated in a PSIM simulation environment emulating the hardware in CRD300DA12EXM3, a 300kW three-phase inverter from Wolfspeed with an RL load representing a motor drive application. Furthermore, a 20kHz switching frequency is chosen and impacts of the motor high-frequency characteristics on the generated EMI noise spectrum of the overall system have been analyzed.

42 ENGINEERING↗
DOE OSTI2025

Skipper-CCD Output Sensitivity Improvement with a Common Source Cascode Amplifier

A Skipper-CCD output has been traditionally readout in a source follower configuration, also known as common drain, mainly because in this configuration a good compromise between sensitivity, noise and speed is achieved. In this work a different approach is presented: the output transistor is connected in a common source configuration and an external cascode device is added in series, obtaining a voltage gain higher than unity without increasing significantly the parasitic capacitance due to Miller effect and thus increasing the obtained voltage per electron of charge. The proposed output stage improves the sensitivity 3.4 times when compared with the traditionally used stage while keeping almost the same equivalent noise charge.

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗
DOE OSTI2020

Resonance Suppression based on Predictive Control of Grid-following Inverters with LCL Filter in Weak Grid Condition

This paper presents an effective resonance suppression control when grid interactive inverter with LCL filter experience weak grid conditions. The resonance suppression mechanism is based on finite-set model predictive control (FSMPC) with adaptive cost function to alter the controller objectives seamlessly. The large parasitic impedance and low short circuit ratio (SCR) of weak grid challenges the operation of gridconnected inverters. Specifically, the LCL filter resonance may get excited, resulting in collapse of the inverter operation. To address this issue, an effective active damping approach is implemented in the proposed control. In the proposed active damping scheme for resonance suppression, the feedback currents are switched based on the operating conditions of inverter. During the stiff grid conditions, grid current serves as feedback to the controller. While in the weak grid conditions, the inverter current is selected as feedback signal. The toggling action between these two feedback currents is determined by comparing moving RMS of grid current with threshold current as constraint in the cost function of the proposed MPC scheme. The threshold current for toggling action is based on the reference active and reactive power setpoints plus an acceptable band of variation. The theoretical analysis is verified by several case studies.

Umar, Muhammad Farooq↗
DOE OSTI2023

Frequency Response Analysis to Monitor and Identify Changes in the Impedance of a Photovoltaic Panel Measured Online using a Power Optimizer

Photovoltaic (PV) cells are generally modeled as a current source due to photocurrent, p-n junction diodes with parasitic resistance, capacitance, and inductance. This paper proposes online frequency response analysis (FRA) to measure the impedance of a PV panel using an existing panel-level power optimizer in a PV system. The algorithm will actively perturb a small signal into a 300 W rooftop PV panel and compute its small signal impedance. The technology discussed is easy to incorporate, requires no additional hardware, doesn't alter the stability of the system, and is implemented at a steady-state point. The power optimizer initially stabilizes at an operating point and then perturbs the PV current via FRA and computes PV panel impedance. The relative standard deviation test conducted indoors under 300 W/m 2 illumination on a PV panel shows a less than 5% error rate in PV panel impedance magnitude and phase is measured using a power optimizer.

14 SOLAR ENERGY↗
DOE OSTI2024

Stacked-Die SiC Half-Bridge Module with Minimum Loop Inductance

Minimizing parasitic inductance of power modules is needed to advance their electrical performance. Innovation in the past decade has driven down the inductance of SiC half-bridge power modules to around 1–2 nH by using multilayer, embedded, and hybrid structures. Further reduction becomes difficult, mainly limited by the excessive interconnects required for the planar placement of vertical conducting chips. To address this, a vertically stacked-die approach is proposed in this paper, taking advantage of the vertical conducting nature of the SiC chips. With ceramic decoupling capacitors integrated, 0.48 nH overall loop inductance is achieved and validated by experimental measurement. This paper also discusses potential approaches to further reduce the inductance.

Ribeiro, Pedro↗
DOE OSTI2025

Towards Scalable 3D Integration of 2T-nC FeRAM with Hundreds of Layer Stacking

In this article, we study the limits of the number of capacitors and read history dependence in a 2T-nC ferroelectric random-access memory (FeRAM) cell, paving the way for its high-density integration toward hundreds of stacked layers. Through a comprehensive experimental and simulation study on the scaling behavior of the 2T-nC FeRAM architecture, we demonstrate: (i) successful fabrication of 2T-64C cells with robust memory operation and clearly distinguishable ‘0’ and ‘1’ states, even in 64- capacitor configurations; (ii) that the parasitic capacitance of the floating node originates predominantly from the linear component of the ferroelectric capacitor, and its impact on n-scaling—due to degraded sense margin—can be mitigated by floating unselected capacitors with enough TΩ isolation; (iii) that sharing write and read transistors among n capacitors introduces a read history dependence issue due to fluctuating floating node voltage (VFN); and (iv) that a proposed FN discharge scheme can effectively eliminate read-sequence dependence, at the cost of reduced read endurance.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Methodology of Low Inductance Busbar Design for Three-Level Converters

Three-level (3L) converters are more susceptible to parasitics compared with two-level converters because of their complicated structure with multiple switching loops. In this article, the methodology of busbar layout design for 3L converters based on the magnetic cancellation effect is presented. The methodology can fit for 3L converters with symmetric and asymmetric configurations. A detailed design example is provided for a high-power 3L-active neutral point clamped (ANPC) converter, which includes the module selection, busbar layout, and dc-link capacitor placement. The loop inductance of the busbar is verified with simulation, impedance measurements, and converter experiments. Furthermore, the results match with each other, and the inductances of short and long loops are 6.5 and 17.5 nH, respectively, which are significantly lower than the busbars of NPC-type converters in other references.

42 ENGINEERING↗
DOE OSTI2020

Evaluating Materials Design Parameters of Hole-Selective Contacts for Silicon Heterojunction Solar Cells

Silicon heterojunction (SHJ) solar cell efficiencies are limited by parasitic absorption from the hydrogenated amorphous silicon (a-Si:H) front contact, but this may be mitigated by selecting an alternative carrier selective contact material with a wider band gap. When choosing such a material as the hole-selective contact (“p-layer”), the alignment of the material's valence band edge energy (E VB ) with that of crystalline silicon (c-Si) is an important criterion, but several other material parameters can also influence the band bending at the contact interface. Here, we simulate an (n)c-Si/(i)a-Si:H/p-layer interface to explore the influence of six materials parameters in a variable p-layer on the SHJ performance. We find a strong influence on the fill factor (FF) from thickness, doping, and E VB , and on V OC from the interfacial defect density; notably, optimal E VB is ~ 0.1 eV higher than the valence band edge energy of a-Si:H. Multiparameter sensitivity analyses demonstrate how performance is simultaneously influenced by E VB and doping; thus, both parameters should be optimized alongside one another. To assess the influence of these parameters experimentally, we grow p-type NiO x as a test-case p-layer, which shows that FFs decrease with the oxygen content likely from the increased misalignment of E VB . Although modest efficiencies are achieved experimentally (>7%), what is important is that our model simulates performance trends. With these results, we apply a materials discovery pipeline to suggest new materials (e.g., ZnTe and BeTe) to try as p-layers in the SHJ. This combination of simulations, experiments, and materials discovery informs a better understanding of contact selection in SHJ cells.

14 SOLAR ENERGY↗
DOE OSTI2026

MIND-MAC: Multi-Level In-memory Quasi Non-Destructive MAC Operation in Compact 2T-nC FeRAM for Efficient DNN Accelerator

We present MIND-MAC, a compact 2T-nC FeRAM architecture that performs multi-level, quasi-non-destructive in-memory multiply–accumulate (MAC) for deep neural networks. By exploiting voltage-controlled partial domain switching in MFM capacitors and read-transistor amplification, the cell stores multi-bit weights and gates bit-serial inputs to produce an accumulated current on shared lines. We combine TCAD-extracted parasitics with experimentally calibrated ferroelectric models in SPICE to validate device-/circuit-level behavior, and validate multi-level sensing and QNRO with measurements on a fabricated 2T-3C test vehicle. An analytical system model maps MIND-MAC to a 6-GB main-memory in-memory compute (IMC) architecture and benchmarks VGG13 inference in 61.08 ms at 964.99 mJ. Results indicate high density, reduced rewrite overhead, and energy efficiency, positioning 2T-nC FeRAM as a promising IMC candidate for next-generation AI hardware.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Luminescence from Poly-Si Films and its Application to Study Passivating-Contact Solar Cells

In recent years, polycrystalline silicon (poly-Si) based passivating-contact solar cells have received tremendous attention from the solar research community due to its excellent surface passivation and high carrier conductivity. However, the poly-Si films are not transparent to all wavelengths of the solar spectrum. There is often some parasitic absorption in these films. From a different standpoint, as they absorb some light, they can luminesce. This phenomenon provides us with unique opportunities to investigate optoelectronic properties of the films in a fast, contactless, and nondestructive manner. In this work, we report the luminescence phenomenon from poly-Si films used in passivating-contact solar cells. We then utilize this phenomenon to report a range of applications for solar cells including studies of carrier transport behaviors and hydrogenation inside the films.

14 SOLAR ENERGY↗
DOE OSTI2020

Outdoor Testing of c-Si Photovoltaic Modules with Spectrally-Selective Mirrors for Operating Temperature Reduction

The efficiency of a c-Si cell drops with increasing cell temperature. A typical photovoltaic module with a c-Si cell will operate 20-30K above ambient temperature. Spectrally-selective photonic mirrors which reflect sub-bandgap light can reduce waste heat generated by parasitic absorption in the module and reduce module operating temperature. Here, a spectrally selective 4-layer and 12-layer mirror are designed and fabricated on module cover glass. When integrated into modules, these mirrors reduce the operating temperature of the module by 0.16K and 1.5K, respectively when compared to a module with bare outer glass.

14 SOLAR ENERGY↗
DOE OSTI2020

Self-Aligned, Selective Area Poly-Si/SiO2 Passivated Contacts for Enhanced Photocurrent in Front/Back Solar Cells

Poly-Si/SiO 2 passivated contact front/back solar cells suffer low Jsc due to parasitic absorption in the front poly-Si layer. We demonstrate a self-aligned, selective area front contact dry-etch technique that retains the as-deposited poly-Si beneath the metal grid lines but thins it elsewhere. Jsc improves by 0.7 mA/cm 2 over our standard 40 nm thick poly-Si. Greater improvements are expected with thicker poly-Si needed for fired metal contacts. Surface passivation is slightly diminished with poly-Si thinning but can be partially restored with rehydrogenation.

14 SOLAR ENERGY↗
DOE OSTI2021

Modeling and Understanding of Rear Junction Double-Side Passivated Contact Solar Cells with Selective Area TOPCon on Front

Device modeling is performed to propose > 25% efficient industry-compatible rear junction double-side passivated contacts solar cell structure with full area p-TOPCon on the rear and selective area n-TOPCon under the front grid pattern (selective TOPCon). Here, this design enables the use of thicker TOPCon (>100nm) on the front for traditional screen-printed contacts without incurring metal-induced damage, high parasitic absorption loss, and compromise in lateral transport or carrier collection on the front. Rear junction design with appropriate bulk lifetime and resistivity combination eliminate the need for heavy doping in the front field region because carriers can flow through the bulk Si without appreciable FF loss. High VOC is maintained because high-quality Si surface passivation in the field region by Al 2 O 3 /SiN gives J 0 comparable to the TOPCon. Our device modeling specifies the practically achievable properties and parameters for each region, including full area rear p-TOPCon, selective area front n-TOPCon, bulk and contacts, to achieve 25.4% efficiency screen-printed bifacial rear junction selective TOPCon cells.

14 SOLAR ENERGY↗
DOE OSTI2023

Loss Analysis and Performance Optimization Pathways of 729-mV Voc Si Solar Cells with Poly-Si on Locally-Etched Dielectric Passivating Contacts

In this article, the loss analysis of silicon solar cells with polysilicon on locally-etched dielectric passivating contacts with Voc=729.0 mV and efficiency=22.6% has been presented. Experimentally, nano-pinholes were introduced in SiO x (2.2 nm) and SiO x /SiN y (2.2 nm/8nm) stack using metal-assisted chemical etching (MACE). SunSolve and Quokka3 were used to simulate the experimental solar cell and investigate the optical and electrical power losses. Simulations suggest maximum power loss occurs due to recombination and resistive losses in the bulk (~0.76 mW/cm2) followed by power loss due to rear contact recombination (~0.35 mW/cm2). Recombination at the front surface also contributes to 0.24 mW/cm2. The effect of improving the bulk lifetime and lowering the recombination current density at the rear side on Voc, FF and hence, efficiency has been investigated. Further, advanced structures have been proposed to minimize recombination and parasitic absorption to achieve higher Voc and Jsc of the solar cells with locally-etched dielectric passivating contacts.

contacts↗
DOE OSTI2024

A Comparison of CdS and Zn(O,S) Buffer Layers in (Ag,Cu)(In,Ga)Se2 Solar Cells

Cu(In,Ga)Se 2 -based solar cells typically use a C dS buffer layer, even though its relatively low bandgap causes parasitic absorption. While alternatives to CdS have been explored in other studies, limited results have been shown for Ag-alloyed CIGS (ACIGS). In this study, ACIGS solar cells with both CdS and Zn(O,S) buffer layers were fabricated and compared for solar cell performance. The Zn(O,S) buffer slightly improved J sc through reduced absorption, although surface optimization is necessary. The Zn(O,S) ACIGS also had improved FF through reduced series resistance and ideality factor, which could be improved further through optimization. However, the Voc in the Zn(O,S) samples was reduced, likely due to increased bulk and front interface recombination. This study shows the promise of Zn(O,S) as a buffer layer in ACIGS solar cells and suggests pathways for further improvement.

absorption↗
DOE OSTI2023

Single-Phase Jet Impingement Cooling for a Power-Dense Silicon Carbide Power Module

The adoption of silicon carbide (SiC) devices in the electric vehicle (EV) industry is increasing due to their superior performance over silicon devices. SiC devices enable further miniaturization of EV inverters, increasing their power density, which results in thermal management challenges. Here in this paper, the limits of single-phase jet impingement cooling are explored for an automotive SiC power module. We propose embedding pin fins in the direct-bonded-copper (DBC) substrate of the power module package using laser powder bed fusion additive manufacturing. The thermalhydraulic performance of the DBC-embedded pin fins is compared against folded fins that are directly soldered to the DBC substrate. A heat conduction analysis was conducted on a SiC package to determine the target heat transfer coefficient (HTC) for the heat sink. A water-ethylene glycol (WEG) jet impingement on the proposed concepts was studied using unit-cell models to achieve the target HTC. The studied designs put emphasis on the reliability and manufacturability requirements of the automotive industry. The thermal performance of DBC-embedded pin fins outperformed the DBC-soldered folded fins. The performance of the DBC-embedded pin fins is benchmarked against WEG-based cooling systems of commercial EVs. With the proposed cooling solution, we have shown a pathway of reducing the specific thermal resistance by 75% compared to BMW i3 thermal management system without any penalty on pressure drop or parasitic power.

33 ADVANCED PROPULSION SYSTEMS↗