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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 577 records · Page 32
All sourcesNASA NTRSDOE OSTI
DOE OSTI2025

Magnetic excitations and absence of charge order in the van der Waals ferromagnet Fe 4.75 GeTe 2

Understanding the ground state of van der Waals (vdW) magnets is crucial for designing devices leveraging these platforms. Here, we investigate the magnetic excitations and charge order in Fe 4.75 GeTe 2 , a vdW ferromagnet with ≈ 315 K Curie temperature. Using Fe L 3 -edge resonant inelastic X-ray scattering, we observe a dual nature of magnetic excitations, comprising a coherent magnon and a broad non-dispersive continuum extending up to 150 meV, 50% higher than in Fe 2.72 GeTe 2 . The continuum intensity is sinusoidally modulated along the stacking direction L, with a period matching the inter-slab distance. Our results indicate that while the dual character of the magnetic excitations is generic to Fe-Ge-Te vdW magnets, Fe 4.75 GeTe 2 exhibits a longer out-of-plane magnetic correlation length, suggesting enhanced 3D magnetic character. Furthermore, resonant X-ray diffraction reveals that previously reported ±(1/3, 1/3, L) peaks originate from crystal structure rather than from charge order.

Ferromagnetism↗
DOE OSTI2025

Reversible self-assembly of small molecules for recyclable solid-state battery electrolytes

Performance often overshadows recyclability in contemporary battery designs, leading to sustainability challenges. Preemptive strategies integrating recyclable chemistry from the outset are thus increasingly critical for addressing the complexities in conventional recycling. Here we harness bio-inspired molecular self-assembly to create inherently recyclable battery materials. We use aramid amphiphiles that self-assemble in water through strong, collective hydrogen bonding and π–π stacking, forming air-stable, high-aspect-ratio nanoribbons with gigapascal-level stiffness. When processed into bulk solid-state electrolytes, these nanoribbons retain their ordered molecular arrangement and exhibit total conductivities of 1.6 × 10 −4 S cm −1 at 50 °C, Young’s moduli of 70 MPa and toughness values of 1 MJ m −3 , despite being stabilized solely by reversible non-covalent bonds. We further demonstrate clean separation of battery components by exposing used cells to an organic solvent, which disrupts the non-covalent cohesion and reverts all battery components to their original forms. Furthermore, this study underscores the potential of molecular self-assembly for specialized recyclable designs in energy storage applications.

Batteries↗
DOE OSTI2025

Configurable antiferromagnetic domains and lateral exchange bias in atomically thin CrPS 4

Interfacial exchange coupling between antiferromagnets (AFMs) and ferromagnets (FMs) crucially makes it possible to shift the FM hysteresis, known as exchange bias, and to switch AFM states. Two-dimensional magnets unlock opportunities to combine AFM and FM materials; however, the buried AFM–FM interfaces obtained by stacking remains challenging to understand. Here, in this work, we demonstrate interfacial control via intralayer exchange coupling in the layered AFM CrPS 4 , where connected even and odd layers realize pristine lateral interfaces between AFM-like and FM-like regions. We distinguish antiphase even-layer states by scanning nitrogen-vacancy centre magnetometry due to a weak surface magnetization. This surface magnetization enables control over the even-layer state, with different regions switching at distinct fields due to their own lateral couplings. We toggle three AFM domains adjacent to a FM-like region and demonstrate a tunable multilevel exchange bias. Our nanoscale visualization unveils the microscopic origins of exchange bias and advances single two-dimensional crystals for hybrid AFM–FM technologies.

magnetic devices↗
DOE OSTI2026

Imaging supermoiré relaxation in helical trilayer graphene

In twisted van der Waals materials, local atomic relaxation can alter the underlying electronic structure. Characterizing lattice reconstruction and its susceptibility to strain is essential for understanding emergent electronic states, especially in multilayers in which interference between moiré lattices yields larger supermoiré patterns whose energy is highly sensitive to local stacking. Here, in this study, we image spatial modulations in the electronic character of helical trilayer graphene, which indicate relaxation into a superstructure of large domains with uniform moiré periodicity. We show that the supermoiré domain size is increased by strain and can be altered in the same device while preserving the local properties within each domain. Finally, we observe a higher conductance at the domain boundaries, consistent with predictions that they host counterpropagating edge modes. Our work provides a real-space visualization of moiré-periodic domains, reveals two independently tunable length scales and demonstrates strain engineering as a route towards designing correlated topological networks at the supermoiré scale.

36 MATERIALS SCIENCE↗
DOE OSTI2026

Revealing key structures for reversible sulfur redox in amorphous polymeric sulfur

Amorphous polymeric sulfur cathodes, such as sulfurized polyacrylonitrile (SPAN), enable high-energy lithium-sulfur batteries without cobalt or nickel, leveraging abundant sulfur. However, the limited in situ understanding of their synthesis and electrochemistry has impeded targeted optimization. Here, in this study, we integrate operando high-energy total scattering with sulfur K-edge X-ray absorption spectroscopy to monitor SPAN's formation and cycling in real time. Our results show that S-C bond formation halts further fusion of cyclized polyacrylonitrile, fostering π-π stacking and a transition from long-chain to short-chain sulfur-critical for reversible sulfur redox. These features synergistically minimize polysulfide dissolution and charge-transfer resistance, enabling optimized SPAN to achieve high capacity retention over 1,000 cycles. Operando X-ray absorption spectroscopy reveals that residual protons drive thiol-thione tautomerism, with lithium replacement during the first discharge causing ~20% irreversible capacity loss. To enhance performance, minimizing -NH groups and expanding pyridine networks are key. These findings transform SPAN optimization from empirical tuning to mechanism‑guided engineering and point the way towards sulfur loadings and energy densities competitive with state‑of‑the‑art Li‑ion cathodes.

25 ENERGY STORAGE↗
DOE OSTI2026

Super-moiré spin textures in twisted two-dimensional antiferromagnets

Stacking two-dimensional layered materials offers a platform to engineer electronic and magnetic states. In general, the resulting states—such as moiré magnetism—have a periodicity at the length scale of the moiré unit cell. Here we study magnetic order in twisted double-bilayer chromium triiodide by means of scanning nitrogen-vacancy microscopy. We observe long-range magnetic textures extending beyond the single moiré unit cell, which we dub a super-moiré magnetic state. At small twist angles, the size of the spontaneous magnetic texture increases with twist angle, opposite to the underlying moiré wavelength. The spin-texture size reaches a maximum of about 300 nm in 1.1° twisted devices, an order of magnitude larger than the underlying moiré wavelength, and vanishes at twist angles above 2°. The obtained magnetic field maps suggest the formation of antiferromagnetic Néel-type skyrmions spanning multiple moiré cells. The twist-angle-dependent study, combined with large-scale atomistic Monte Carlo simulations, suggests that the magnetic competition between the Dzyaloshinskii–Moriya interaction, magnetic anisotropy and exchange interactions—which all depend on the relative rotation of the layers—produces the topological textures that emerge in the super-moiré spin order.

Wong, King Cho [Univ. of Stuttgart (Germany)] (ORC↗
DOE OSTI2025

High-resolution tunnelling spectroscopy of fractional quantum Hall states

Strong interactions between electrons in two-dimensional systems in the presence of a high magnetic field give rise to fractional quantum Hall states that host quasiparticles with a fractional charge and fractional exchange statistics. Here, in this work, we demonstrate high-resolution scanning tunnelling microscopy and spectroscopy of fractional quantum Hall states in ultra-clean Bernal-stacked bilayer graphene devices. Spectroscopy measurements show sharp excitations that have been predicted to emerge when electrons fractionalize into bound states of quasiparticles. We found energy gaps for candidate non-abelian fractional states that are larger by a factor of five than those in other related systems, for example, semiconductor heterostructures, and this suggests that bilayer graphene is an ideal platform for manipulating these quasiparticles and for creating topological quantum bits. We also found previously unobserved fractional states in our very clean graphene samples.

quantum Hall↗
DOE OSTI2025

Robust supermoiré pattern in large-angle single-twist bilayers

Forming long-wavelength moiré superlattices in van der Waals bilayers that have a small-angle twist between the two layers has been a key approach for creating moiré flat bands. However, for small twist angles, strong lattice reconstruction creates domain walls and other forms of disorder in the moiré pattern, posing considerable challenges for engineering such platforms. At large twist angles, the lattices are more rigid, but it is difficult to produce flat bands in shorter-wavelength moiré superlattices. Here, in this study, we introduce an approach for tailoring robust supermoiré structures in bilayers of transition-metal dichalcogenides using only a single twist near a commensurate angle. Structurally, we show the spontaneous formation of a periodic arrangement of three inequivalent commensurate moiré stackings, where the angle deviation from the commensurate angle determines the periodicity. Electronically, we reveal a large set of van Hove singularities that indicate strong band hybridization, leading to flat bands near the valence band maximum. Our study extends the study of the interplay among band topology, quantum geometry and moiré superconductivity to the large twist angle regime.

electronic properties and materials↗
DOE OSTI2024

Twist-assisted all-antiferromagnetic tunnel junction in the atomic limit

Abstract Antiferromagnetic spintronics 1,2 shows great potential for high-density and ultrafast information devices. Magnetic tunnel junctions (MTJs), a key spintronic memory component that are typically formed from ferromagnetic materials, have seen rapid developments very recently using antiferromagnetic materials 3,4 . Here we demonstrate a twisting strategy for constructing all-antiferromagnetic tunnel junctions down to the atomic limit. By twisting two bilayers of CrSBr, a 2D antiferromagnet (AFM), a more than 700% nonvolatile tunnelling magnetoresistance (TMR) ratio is shown at zero field (ZF) with the entire twisted stack acting as the tunnel barrier. This is determined by twisting two CrSBr monolayers for which the TMR is shown to be derived from accumulative coherent tunnelling across the individual CrSBr monolayers. The dependence of the TMR on the twist angle is calculated from the electron-parallel momentum-dependent decay across the twisted monolayers. This is in excellent agreement with our experiments that consider twist angles that vary from 0° to 90°. Moreover, we also find that the temperature dependence of the TMR is, surprisingly, much weaker for the twisted as compared with the untwisted junctions, making the twisted junctions even more attractive for applications. Our work shows that it is possible to push nonvolatile magnetic information storage to the atomically thin limit.

Science & Technology - Other Topics↗
DOE OSTI2024

Opto-twistronic Hall effect in a three-dimensional spiral lattice

Studies of moire systems have elucidated the exquisite effect of quantum geometry on the electronic bands and their properties, leading to the discovery of new correlated phases. However, most experimental studies have been confined to a few layers in the 2D limit. The extension of twistronics to its 3D limit, where the twist is extended into the third dimension between adjacent layers, remains underexplored due to the challenges in precisely stacking layers. Here, in this study, we focus on 3D twistronics on a platform of self-assembled spiral superlattice of multilayered WS 2 . Our findings reveal an opto-twistronic Hall effect in the spiral superlattice. This mesoscopic response is an experimental manifestation of the noncommutative geometry that arises when translational symmetry is replaced by a non-symmorphic screw operation. We also discover signatures of altered laws of optical excitation, manifested as an unconventional photon momentum-lattice interaction owing to moire of moire modulations in the 3D twistronic system. Crucially, our findings mark the initial identification of higher-order quantum geometrical tensors in light-matter interactions. This breakthrough opens new avenues for designing quantum materials-based optical lattices with large nonlinearities, paving the way for the development of advanced quantum nanophotonic devices.

Ji, Zhurun↗
DOE OSTI2025

Proximity ferroelectricity in wurtzite heterostructures

Proximity ferroelectricity is an interface-associated phenomenon in electric-field-driven polarization reversal in a non-ferroelectric polar material induced by one or more adjacent ferroelectric materials. Here, in this paper, we report proximity ferroelectricity in wurtzite ferroelectric heterostructures. In the present case, the non-ferroelectric layers are AlN and ZnO, whereas the ferroelectric layers are Al 1−x B x N, Al 1−x Sc x N and Zn 1−x Mg x O. The layered structures include nitride–nitride, oxide–oxide and nitride–oxide stacks that feature two-layer (asymmetric) and three-layer (symmetric) configurations. Ferroelectric switching in both layers is validated by multimodal characterization methods, including polarization hysteresis, anisotropic chemical etching, second harmonic generation, piezo response force microscopy, electromechanical testing and atomic resolution polarization orientation imaging in real space by scanning transmission electron microscopy. We present a physical switching model in which antipolar nuclei originate in the ferroelectric layer and propagate towards the internal non-ferroelectric interface. The domain wall leading edge produces elastic and electric fields that extend beyond the interface at close proximity, reducing the switching barrier in the non-ferroelectric layer, and allowing complete domain propagation without breakdown. Density functional theory calculations of polymorph energies, reversal barriers and domain wall energies support this model. Proximity ferroelectricity enables polarization reversal in wurtzites without the chemical or structural disorder that accompanies elemental substitution, opening new questions and opportunities regarding interface-based ferroelectricity.

36 MATERIALS SCIENCE↗
DOE OSTI2024

Signatures of ambient pressure superconductivity in thin film La 3 Ni 2 O 7

Recently, the bilayer nickelate La 3 Ni 2 O 7 has been discovered as a new superconductor with transition temperature T c near 80 K under high pressure. Despite extensive theoretical and experimental work to understand the nature of its superconductivity, the requirement of extreme pressure restricts the use of many experimental probes and limits its application potential. Here, in this work, we present signatures of superconductivity in La 3 Ni 2 O 7 thin films at ambient pressure, facilitated by the application of epitaxial compressive strain. The onset T c varies approximately from 26 K to 42 K, with higher T c values correlating with smaller in-plane lattice constants. We observed the co-existence of other Ruddlesden-Popper phases within the films and dependence of transport behavior with ozone annealing, suggesting that the observed low zero resistance T c of around 2 K can be attributed to stacking defects, grain boundaries, and oxygen stoichiometry. This finding initiates numerous opportunities to stabilize and study superconductivity in bilayer nickelates at ambient pressure, and to facilitate the broad understanding of the ever-growing number of high temperature and unconventional superconductors in the transition metal oxides.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2025

Millisecond lifetimes and coherence times in 2D transmon qubits

Materials improvement is a powerful approach to reducing loss and decoherence in superconducting qubits, because such improvements can be readily translated to large-scale processors. Recent work improved transmon coherence by using tantalum as a base layer and sapphire as a substrate. The losses in these devices are dominated by two-level systems with comparable contributions from both the surface and bulk dielectrics, indicating that both must be tackled to achieve substantial improvements in the state of the art. Here we show that replacing the substrate with high-resistivity silicon markedly decreases the bulk substrate loss, enabling 2D transmons with time-averaged quality factors (Q avg ) of 9.7 × 10 6 across 45 qubits. For our best qubit, we achieve a Q avg of 1.5 × 10 7 , reaching a maximum Q of 2.5 × 10 7 , corresponding to a lifetime (T 1 ) up to 1.68 ms. This low loss also allows us to observe decoherence effects related to the Josephson junction, and we use an improved, low-contamination junction deposition to achieve Hahn echo coherence times (T 2E ) exceeding T 1 . We achieve these materials improvements without any modifications to the qubit architecture, allowing us to readily incorporate standard quantum control gates. Here, we demonstrate single-qubit gates with 99.994% fidelity. The tantalum-on-silicon platform comprises a simple material stack that can potentially be fabricated at the wafer scale and therefore can be readily translated to large-scale quantum processors.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2024

RNA-Puzzles Round V: blind predictions of 23 RNA structures

RNA-Puzzles is a collective endeavor dedicated to the advancement and improvement of RNA three-dimensional structure prediction. With agreement from structural biologists, RNA structures are predicted by modeling groups before publication of the experimental structures. We report a large-scale set of predictions by 18 groups for 23 RNA-Puzzles: 4 RNA elements, 2 Aptamers, 4 Viral elements, 5 Ribozymes and 8 Riboswitches. We describe automatic assessment protocols for comparisons between prediction and experiment. Our analyses reveal some critical steps to be overcome to achieve good accuracy in modeling RNA structures: identification of helix-forming pairs and of non-Watson–Crick modules, correct coaxial stacking between helices and avoidance of entanglements. Three of the top four modeling groups in this round also ranked among the top four in the CASP15 contest.

59 BASIC BIOLOGICAL SCIENCES↗
DOE OSTI2026

Adaptive optical correction for in vivo two-photon fluorescence microscopy with neural fields

Adaptive optics restore ideal imaging performance in complex samples by measuring and correcting optical aberrations but often require custom-built microscopes with carefully aligned wavefront sensing/shaping devices and can be susceptible to sample motion. Here we describe NeAT, a computational framework using neural fields for adaptive optics two-photon fluorescence microscopy. NeAT estimates wavefront aberration and recovers sample structure from a 3D image stack without requiring external datasets for training. Incorporating motion correction in learning and correcting conjugation errors commonly found in commercial microscopes, NeAT is designed for deployment in biological laboratories for in vivo imaging. We validate NeAT’s performance using a custom-built microscope with a wavefront sensor under varying signal-to-noise ratios, aberration and motion conditions. With a commercial microscope, we demonstrate real-time aberration correction for in vivo morphological and functional imaging in the living mouse brain, with NeAT improving the signal and accuracy of glutamate and calcium imaging of synapses and neurons.

Kang, Iksung↗
DOE OSTI2025

Tracking oxygen vacancy migration in memristor devices using operando hard X-ray photoelectron spectroscopy

Fabrication of ultrathin (sub-2 nm) oxide semiconductor memristors poses the fundamental challenge of achieving oxide growth with atomic precision in terms of electronic structure and defect formation. Recently, ultrathin memristors consisting of bilayers of mixed Al 2 O 3 and MgO atomic layers were fabricated using an in vacuo atomic layer deposition process. This approach offers a unique platform for precise atomic control of oxygen vacancies in the device in which the vacancies are introduced by placing MgO atomic layers between pristine Al 2 O 3 layers. In this work, we present a systematic operando Hard X-ray PhotoElectron Spectroscopy (HAXPES) study of the switching of such memristors, combined with complementary current-voltage and capacitance-voltage (C-V) measurements. We used a memristor stack of Al 2 O 3 /MgO atomic layers, with the MgO-containing oxide deposited on the bottom Al metal electrode and a pure Al 2 O 3 layer below the top Pd electrode. HAXPES analysis shows a substantial change in the chemical shift of the Aluminum oxide when switching between the ”OFF” and ”ON” states indicative of a redistribution of oxygen vacancies in the device active layer. Interestingly, subsequent switching to the OFF state shows hysteretic behavior indicating the retention of some oxygen vacancies in the top Al 2 O 3 layer. This vacancy retention can be correlated with the stochastic behavior of the switching voltage observed in these devices. C–V measurements show a clear frequency-dependent response in the OFF state, consistent with enhanced polarization and vacancy trapping at low frequencies.

47 OTHER INSTRUMENTATION↗
DOE OSTI2025

Unconventional nonlinear Hall effects in twisted multilayer 2D materials

We present the first investigation of unusual nonlinear Hall effects in twisted multilayer 2D materials. Contrary to expectations, our study shows that these nonlinear effects are not merely extensions of their monolayer counterparts. Instead, we find that stacking order and pairwise interactions between neighboring layers, mediated by Berry curvatures, play a pivotal role in shaping their collective nonlinear optical response. By combining large-scale Real-Time Time-Dependent Density Functional Theory (RT-TDDFT) simulations with model Hamiltonian analyses, we demonstrate a remarkable second-harmonic transverse response in hexagonal boron nitride four-layers, even in cases where the total Berry curvature cancels out. Furthermore, our symmetry analysis of the layered structures provides a simplified framework for predicting nonlinear responses in multilayer materials in general. Our investigation challenges the prevailing understanding of nonlinear optical responses in layered materials and opens new avenues for the design and development of advanced materials with tailored optical properties.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Mixed polytype/polymorph formation in InSe films grown by molecular beam epitaxy on GaAs(111)B

Abstract We report the growth of InSe films on semi-insulating GaAs(111)B substrates by molecular beam epitaxy (MBE). Excellent nucleation behavior resulted in the growth of smooth, single-phase InSe films. The dominant polytype was the targeted γ-InSe. Transmission electron microscopy revealed the presence of three bulk polytypes β, γ, and ε-InSe arranged in nanosized domains, which can be interpreted as sequences of stacking faults and rotational twin boundaries of γ-InSe. Additionally, a centrosymmetric Se-In-In-Se layer polymorph with $P\bar{3}m$ symmetry was identified as typically not present in bulk. Sizeable differences in their electronic properties were found, which resulted in sizeable electronic disorder arising from the nanoscale polytype arrangement that dominated the electronic transport properties. While MBE is a viable synthesis route towards stabilization of InSe polytypes not present in the bulk, an improved understanding to form the targeted polymorph is required to ultimately inscribe a layer sequence on demand utilizing bottom-up synthesis approaches.

ferroelectrics and multiferroics↗