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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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DOE OSTI2016

High thermoelectric performance of n-type PbTe 1-y S y due to deep lying states induced by indium doping and spinodal decomposition

Good thermoelectric materials should have high engineering figure-of-merit (ZT) eng , not peak ZT, to achieve high conversion efficiency. In this work, we achieved a good (ZT) eng by optimizing the carrier concentration to improve the room temperature ZT using deep lying dopant, indium, in PbTe 1-y S y . It was found that a room temperature ZT as high as ~0.5 and a peak ZT ~1.1 at about 673 K were obtained in Pb 0.98 In 0.02 Te 0.8 S 0.2 due to a lower thermal conductivity by alloy scattering and Spinodal decomposition. The calculated efficiency could be as high as ~12% at cold side 323 K and hot side 773 K. The approach is expected to work in other materials systems too.

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