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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 595 records · Page 33

Detector Characterization for Quantitative Spectral Radiography of Uranium Powder Samples

Pacific Northwest National Laboratory (PNNL) is developing a prototype spectral x-ray radiography (SpecX) non-destructive assay system for noninvasive material mass quantification of uranium-bearing powders. The SpecX system uses a custom material estimation algorithm, which requires a high-fidelity pixel-by-pixel detector response model for accurate quantification. We performed a detailed characterization and built a model of a High-Energy X-ray Imaging Technology (HEXITEC) CdTe pixelated spectral detector. Here we present the detector characterization which led to that model, including a determination of the pixel-wise energy calibration, the detection efficiency, the detector uniformity, the detector stability, and a comparison of methods to remove charge-shared events.

spectral X-ray radiography, pixelated detector, ca↗

Scintillator based nuclear photovoltaic batteries for power generation at microwatts level

A nuclear photovoltaic battery uses scintillator to convert radiation into visible light, which is then collected by a photovoltaic (PV) cell to generate electricity. If the radiation is gamma-rays emitted from external sources, the battery may also be referred as gammavoltaic battery. In this study, a polycrystalline CdTe solar cell was optically coupled with a 2.0 cm × 2.0 cm × 1.0 cm Gadolinium Aluminum Gallium Garnet (GAGG) scintillator, and the resulting device was tested using intense gamma radiation fields from a Cs-137 (1.5 kRad/h) and a Co-60 (10 kRad/h) irradiator. Measurements with Cs-137 provided a maximum power output (P max ) of ~288 nW, with a short-circuit current density (J sc ) of ~1.22 μA/cm 2 and an open-circuit voltage (V oc ) of ~0.34 V. In contrast, Co-60 irradiator gave a P max of 1.5 μW, with a J sc of ~4.73 μA/cm 2 and a V oc of ~0.38 V. The CdTe was also paired with a Lutetium-Yttrium Oxyorthosilicate (LYSO) crystal and tested with the Cs-137 source. The experiment presents a scalable option to reach to higher power outputs by harvesting gamma radiation fields in many cases where high radiation field demands heavy shielding and is often regarded as unwanted waste.

25 ENERGY STORAGE↗

Optimized NiTe 2 /Ni back contacts via chemical deposition for high performance CdTe solar cells

The development of efficient and stable back contacts remains a major challenge in achieving high performance and long-term stability of CdTe thin-film solar cells. Here, this work revisits the formation of NiTe 2 by chemical bath deposition (CBD) as a back contact for CdTe devices. An optimized CBD recipe, based on high-purity precursors and the addition of copper chloride directly into the bath, was developed and applied to fabricate Cu-doped CdTe solar cells. A modified Cu-free methodology was also applied to Group V doped absorbers. The process included pinhole filling, ion milling, CBD, annealing, and sputtering to form a low-barrier back contact. Devices fabricated using this method achieved consistent open-circuit voltages (V oc ) above 800 mV and fill factors (FF) exceeding 70%. The best Cu-doped devices reached power conversion efficiencies (PCE) above 18 %, and preliminary results with Group V-doped material demonstrated compatibility of the method with high-efficiency, state-of-the-art CdTe devices. This study shows that NiTe 2 /Ni back contacts, formed via an optimized chemical process followed by sputtering of Ni, represent a promising pathway for achieving low-barrier and potentially stable back contacts in modern CdTe photovoltaics.

14 SOLAR ENERGY↗

Laser adaptive holographic hydroacoustic intensimeter

A new type of a vector hydrophone, a laser adaptive hydroacoustic intensimeter, is investigated. Two identical, spatially separated coil-type sensors are used as a primary receiver of the acoustic signal. The signals received at the sensor output are phase demodulated in a two-channel adaptive holographic interferometer based on two dynamic holograms multiplexed in a CdTe photorefractive crystal. Using a laser intensimeter, the acoustic field formed in a limited volume is studied. The performance characteristics of the intensimeter are determined experimentally; its threshold sensitivity, according to the acoustic field intensity, constitutes 0.1 × 10{sup −13} W m{sup −2}. (laser applications)

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND ↗

Structural phase transition and manifestation of eddy currents in IR reflection spectra of PbSnTe semiconductor films

Infrared reflection spectra of thin (∼60 nm) Pb{sub 1−x} Sn{sub x}Te (x = 0.25, 0.53, 0.59) films grown by molecular beam epitaxy on GaAs/CdTe hybrid substrates have been measured at frequencies from 20 to 5500 cm{sup −1} and temperatures from 5 to 300 K. The spectra have been used to determine temperature-dependent transverse phonon and plasmon frequencies in the films, which has made it possible to identify a structural phase transition at T{sub C} ≈ 50 K. The plasma frequency of the films has been shown to increase with decreasing band gap on cooling from 300 to 77 K. The increase in plasma frequency is mainly attributable to the increase in carrier concentration and a transition of the carriers from vortex states on the film surface to the valence band. (paper)

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

Characterizing electron-collecting CdTe for use in a 77 ns burst-rate imager

The Keck-PAD (pixel array detector) was developed at Cornell as a burst-rate imager capable of recording images from successive electron bunches (153 ns period) from the Advanced Photon Source (APS). Both Si and hole-collecting Schottky CdTe have been successfully bonded to this ASIC (application-specific integrated circuit) and used with this frame rate. The facility upgrades at the APS will lower the bunch period to 77 ns, which will require modifications to the Keck-PAD electronics to image properly at this reduced period. In addition, operation at high X-ray energies will require a different sensor material having a shorter charge collection time. For the target energy of 40 keV for this project, simulations have shown that electron-collecting CdTe should allow >90% charge collection within 35 ns. This collection time will be sufficient to sample the signal from one frame and prepare for the next. 750 µm-thick electron-collecting Schottky CdTe has been obtained from Acrorad and bonded to two different charge-integrating ASICs developed at Cornell, the Keck-PAD and the CU-APS-PAD. Carrier mobility has been investigated using the detector response to single X-ray bunches at the Cornell High Energy Synchrotron Source and to a pulsed optical laser. The tests indicate that the collection time will meet the requirements for 77 ns imaging.

36 MATERIALS SCIENCE↗

Combinatorial Study of MZO Emitters for CdTe-Based Solar Cells

Precise band alignment at the front interface of CdTe-based solar cells is necessary to reduce photoexcited charge carrier recombination and to enable higher energy conversion efficiencies. Magnesium zinc oxide is not only transparent but also offers the ability to tune the conduction band offset with CdTe at the front of the device stack. In this work, we describe reactive sputtering of Mg 1-x Zn x O using metal targets and its application in CdTe photovoltaics. Combinatorial libraries of Mg 1-x Zn x O were created to tune the conduction band alignment for the optimal performance of CdTe solar cells. Band gap variation of more than 0.4 eV is achieved across a 3-inch substrate. Kelvin probe measurements demonstrate variance of work function across the substrate. Device performance is optimized at band gaps of 3.5 eV for the CdTe device processing conditions employed in this study.

14 SOLAR ENERGY↗

Spatially and Spectrally Resolved Defects in Polycrystalline CdTe Thin Films Revealed by Quantitative Cathodoluminescence

Increasing the grain size is a potential strategy to reduce grain-boundary recombination and improve performance of thin-film solar cells. Here, CdTe thin films with a range of grain sized were produced by varying the CdC1 2 post-deposition treatment temperature. We use high-resolution cathodoluminescence (CL) microscopy to study recombination and shallow defect levels in detail. Intensities from room temperature CL maps were compared across samples. We find that the CL intensity initially increases with grain size, as expected, but then plateaus as the grain size is increased further. The plateau is correlated with a decrease in the characteristic length-related to the carrier diffusion length-determined from CL intensity profiles near grain boundaries. In addition, low-temperature CL measurements demonstrate the evolution of the defect levels with CdC1 2 temperature.

cadmium telluride thin films↗

Quantifying Bulk and Surface Recombination in CdTe Solar Cells Using Time-Resolved Terahertz Spectroscopy

Understanding the nature of recombination mechanisms is essential for higher power conversion efficiency in photovoltaic (PV) devices. Here we use a combination of time-resolved terahertz spectroscopy and numerical modeling to determine the bulk Shockley-Read-Hall lifetime and interface and back surface recombination velocities in CdTe thin film stacks. Furthermore, the measurement was facilitated by fabricating wire-grid device structures using conventional laser scribing. Evaluation of a glass/FTO/SnO2/CdS/CdTe stack treated with CdCl2 allowed separation of the CdTe absorber bulk lifetime, 1.6 ns, from the back surface recombination velocity, ~6x10 4 cm/s, and indicated that CdTe/CdS interface recombination velocity had no significant impact on carrier dynamics.

14 SOLAR ENERGY↗

Sub-Bandgap Features in CdSeTe Solar Cells: Parsing the Roles of Material Properties and Cell Optics

In this contribution, we investigate why different dopant species and back-contact architectures lead to different sub-bandgap behaviors in CdSeTe solar cells. Through extraction of the absorptance from photoluminescence spectra, we parse the contributions from material properties and from cell optics. We show that, as expected, arsenic doping leads to an increase in sub-bandgap features over traditional copper doping, and that this is a material property of arsenic-doped CdSeTe. Conversely, the increase in sub-bandgap absorption and emission using alternative back contact architectures can be attributed to the cell optics, and more specifically to the increased reflectance of the back interface, leading to at least a doubling of the pathlength for sub-bandgap photons.

arsenic doping↗

Carrier Lifetime as a Function of Se Content for CdSexTe1-x Films Grown on Al2O3 and MgZnO

Time-resolved photoluminescence (TRPL) with two excitation wavelengths – 670 (standard) and 405 nm – was used to examine the effect on carrier lifetime of two significant recent advances in CdTe: the incorporation of Se to form graded CdSe x Te 1-x and the use of Mg y Zn 1-y O buffers. The two excitation wavelengths probe depths of approximately 130 and 35 nm, respectively, and their comparison helps differentiate interface and bulk contributions to carrier lifetime. It was found that x = 0.2 Se was required to obtain lifetime improvements, primarily in the bulk. Additionally, TRPL traces for Mg y Zn 1-y O/CdSe x Te 1-x samples showed fast initial decay followed by a long-lived tail, which may be indicative of trap-dominated recombination. This behavior was not present for CdSe x Te 1-x films grown on Al 2 O 3 , which is currently state-of-the-art for surface passivation in CdTe. This indicates that further work is required to sufficiently passivate the front interface.

cadmium telluride↗

CdSexTe1-x/CdTe Devices with Reduced Interface Recombination Through Novel Back Contacts and Group-V Doping

Since excellent carrier lifetimes and front interface electronic quality are now achieved, rear interface recombination can limit V OC in CdSexTe1-x/CdTe solar cells. Several back-contact structures for devices were fabricated using combinations of tellurium, aluminum oxide, amorphous silicon, and indium tin oxide (ITO). Time-resolved photoluminescence was used to characterize such structures. We show increasingly improved interface passivation through the subsequent use of aluminum oxide, amorphous silicon, and ITO. Additionally, we show that arsenic-doped absorbers form a more passive interface with numerous back contact structures.

aluminum oxide↗

Effect of Near-Interface Compensation of CdSeTe Absorber Layers on Solar Cell Performance

Arsenic has been shown to be an effective p-type dopant of CdTe. However, challenges remain in the fabrication of high efficiency CdTe solar cells using As. As-doped CdTe is prone to self-compensation and observed accumulation of dopant atoms in CdTe near the interface with MgZnO (MZO) suggests that this could be occurring. In this study, we use SCAPS 1-D modeling software to investigate the effect of near-interface compensation. We consider three cases: shallow donors, deep recombination centers, and a thin layer of excess positive charge accumulation. All of these cases are shown to have significant effects on the current-voltage characteristics, while the thin charge layer also affects capacitance-voltage measurements.

arsenic↗

Solar Photovoltaic (PV) Manufacturing Expansions in the United States, 2017-2019: Motives, Challenges, Opportunities, and Policy Context

This report analyzes U.S. PV manufacturing announcements from 2017 through July-2019 and explores the potential impact of tariffs on the competitiveness of U.S. PV module manufacturing. First, the fraction of announcements that resulted in established facilities in the time frame specified is analyzed, as well as firm nationality and the existence of any other U.S. facilities for the firm. The prevalence of different PV product types among the announcements was also analyzed, as well as the type of facilities selected for development (greenfield, existing PV factories, or repurposed buildings). The cost to build these facilities was also analyzed in the context of their capacity, the value of incentives received by state and local governments, and the number of jobs created. Case studies of Auxin Solar, First Solar, Hanwha Q Cells, JinkoSolar, LG, Silfab, Solaria, and SunPower were conducted and highlight five factors influencing firms’ decisions to expand their U.S. PV production capacity. These included: 1) proximity to demand, including supply contracts and demand for domestic content 2) tariffs and other incentives. The Section 201 tariffs on PV module imports were often described helpful but tariffs on cell imports (Section 201) or materials (Section 301, Section 232) were often described as counterproductive since U.S. supply chains do not exist for many necessary goods. The corporate tax decrease and local incentives were often mentioned as helpful. 3) the ability to move quickly in order to maximize the benefit of the Section 201 tariffs. This affected decisions to select localities with faster permitting or moving into existing buildings. 4) competition with scale, where competing with Asian PV imports or avoiding imports of material from China was challenging due to the larger scale of Asian manufacturers. Additionally, smaller firms expressed concerns that larger firms may not need their U.S. facilities to profitable. 5) access to capital, which was a particular challenge for smaller firms. Several U.S. tariffs affect the economics of PV cells, modules, and balance-of-module (BOM) materials, some of which are applicable to a long list of countries and others applicable only to China or Taiwan. We analyze how the tariffs interact to affect the prices of c-Si modules sourced under various assumptions about domestic and imported components and assembly. We estimate module prices under a range of baseline scenarios featuring U.S.-assembled modules with Southeast Asian cells (not from China or Taiwan). When all BOM components are sourced from the United States, baseline module prices are $0.37/W (below the 2.5-GW Section 201 cell cap) to $0.42/W (above the 2.5-GW cell cap). If all BOM components are sourced from China, the module price in this baseline U.S.-assembly scenario can reach up to $0.60/W. Imported module prices are lower than or within the range of the U.S.-assembled baseline prices under some conditions. Importing bifacial modules from Southeast Asia is the lowest-priced alternative, at $0.35/W, because bifacial modules are excluded from the Section 201 tariffs. Importing Southeast Asia modules that contain U.S. cells results in a price of $0.38/W, also owing to a Section 201 exclusion. Importing Southeast Asian modules that have Southeast Asian cells yields a price of $0.44/W, and importing Chinese modules that have U.S. cells yields a price of $0.58/W. These results suggest that U.S. tariff policy in 2019 may encourage U.S. assembly of mono-facial c-Si modules if the 2.5-GW cell import cap is not reached and Chinese BOM imports are negligible. However, some imported module options may offer the lowest prices if the 2.5-GW cell import cap is reached and/or U.S. module manufacturers must rely on significant Chinese BOM content. The analysis shows the 2.5-GW cell cap may be exceeded in 2019 and following years. It is also likely that U.S. module manufacturers will need to use at least some Chinese BOM content, since U.S. module manufacturers have stated that U.S. supply chains do not exist (or do not exist at a sufficient scale) for most BOM components, which makes them at least partially reliant on Chinese BOM and thus subject to Section 301 tariffs.

14 SOLAR ENERGY↗

Photovoltaics Research and Development: Device Architecture for Next-Generation CdTe PV. Cooperative Research and Development Final Report, CRADA Number CRD-17-00662

Despite remarkable efficiency improvements at the cell and module level, thin-film CdTe PV suffers from a significant voltage deficit compared with the ideal. The proposed solution is to build cells with fully depleted absorbers and with energy barriers front and back to direct electrons and holes in appropriate directions. Combined with minimal interfacial recombination, this approach, which is similar to the successful silicon HIT cells, circumvents the need for higher lifetimes and carrier concentration to achieve higher voltage, Colorado State is particularly well-positioned to the address the depleted absorbed architecture. It has robust single-vacuum closed-spaced-sublimation deposition chamber, currently being enhanced with new sources for CdTe alloys and grading. It has made reasonable-efficiency cells with absorbers as thin as 0.3 um, it has demonstrated electron reflection at the rear of the absorber with a continuous CdMgTe layer, it has replaced CdS with MgZnO, which has several advantages including tunable band offsets, and it has achieved 16.8% efficiency. It also has a mature suite of measurement equipment for cell evaluation and the experience to effectively analyze its results for refinement in cell fabrication. Several healthy collaborations will continue within the CdTe community.

14 SOLAR ENERGY↗

Cross-Cutting Metrology Tools for In Operando Characterization of Carrier Dynamics in Photovoltaic Devices (Final Technical Report)

Understanding the nature of recombination and its dependence on defects and interfaces is essential for engineering materials and contacts for higher V oc and photovoltaic (PV) efficiency. Time-resolved photoluminescence (TRPL) has conventionally been used to evaluate recombination, but not all materials are strongly emissive or otherwise suitable. Time-resolved terahertz spectroscopy is a pump – probe method that presents valuable complementary information, wherein an optical pump pulse photoexcites carriers within the absorber and the transient photoconductivity is probed with a terahertz pulse. Until now, experimental constraints have prohibited the use of terahertz probes to interrogate full device stacks, and measurements were instead made on exfoliated films or films grown on unconventional substrates. However, interfaces are critical to the behavior of photoexcited carriers in solar cells, and the substrates themselves often influence the film growth and bulk properties. Therefore, it is important to probe the behavior of PV absorbers as close as possible to their normal operating conditions. Here we have developed cross-cutting metrology that enable in operando characterization of carrier dynamics and recombination mechanisms in working PV devices. Through a combination of complementary non-contact TRTS and TRPL experiments and modeling, we have obtained key parameters including photoexcited carrier bulk lifetime and interface and back surface recombination velocities with greater precision and accuracy than can be achieved with conventional TRPL alone. By varying pulsed photoexcitation conditions, the contributions of interface and bulk recombination mechanisms can be determined. We have developed and refined this characterization approach by investigating CdTe PVs, which is a well-established technology but with significant margin for further improvements in efficiency. Results were published in Journal of Applied Physics (DOI: 10.1063/5.0064730) and Proceedings of the IEEE PVSC (DOI: 10.1109/PVSC43889.2021.9518559). After validating the approach, we have applied it to correlate recombination rates to processing conditions and material properties, including composition and defects as well as interfaces and surface treatments. Such feedback can inform processing and design choices to enable higher PV efficiency, not only for CdTe, but also CdSe x Te 1-x , CIGS, perovskites, kesterites, and future technologies. A perspective on predicting solar cell performance from terahertz spectroscopy was published in Advanced Energy Materials (DOI: 10.1002/aenm.202102776). The cross-cutting metrology tools developed here will enable determination of the locus and mechanism of performance-limiting recombination in thin film PV devices. This feedback can guide the engineering of PV devices with higher V oc and efficiency, thereby leading to reductions in levelized cost of electricity to meet the SunShot 2030 target of $0.03/kWh for utility-scale PV. Lower costs will enable rapid expansion of renewable electricity generation that is nearly free of carbon emissions. Reducing carbon emissions of the electricity sector is one of the most important solutions to climate change. The project’s specific focus on CdTe PV can benefit First Solar, the US company that is the global leader in CdTe technology, through both technology and workforce development.

14 SOLAR ENERGY↗