Atomically smooth and homogeneously N-polar AlN film grown on silicon by alumination of Si{sub 3}N{sub 4}
By using an alumination process of Si{sub 3}N{sub 4} at high temperature with aluminum flux irradiation for sufficient time, homogeneously N-polar and atomically smooth AlN film has been realized on silicon substrate with inversion domain suppressed to less than 3.0 Multiplication-Sign 10{sup 6} cm{sup -2} and root mean square surface roughness of {approx}0.4 nm. A general interface model is proposed to explain the mechanism of polarity determination. The sharp AlN(0001)/Si(111) interface exhibits 5:4 coincidence domain matching, resulting in an almost fully relaxed AlN film.