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At least 595 records · Page 33

Enhanced axial confinement in a monolithically integrated self-rolled-up SiN x vertical microring photonic coupler

We report an efficient method to introduce enhanced axial confinement in the self-rolled-up SiN x vertical microtube coupler by depositing a thin layer of high refractive index material strip within the coupling section and effectively forming a vertical microring. Three times wider mode spacing is observed in such a vertical microring coupler monolithically integrated with a silicon nitride ridge waveguide as compared to the one without such axial confinement. More importantly, single mode operation within the telecomm C-band and S-band is achieved. The self-rolled-up microtube has been demonstrated to be a versatile device platform, which has found application in a number of areas including nanophotonics,1–7 microelectronics,8 chemical and biological sensing,9–11 and intelligent synthetic neural circuits.12 Because the microtube is a three dimensional (3D) structure readily fabricated using two dimensional processing technology, it may serve naturally as a component in 3D-integrated devices. We had previously demonstrated a vertical microtube coupler (VμTC) monolithically integrated with planar ridge waveguides in silicon photonic platform to achieve 3D photonic coupling and observed greatly enhanced coupling between the microtube and the underlying ridge waveguide.1,13 A similar result was reported independently by another research group shortly thereafter.2 One limitation of the VμTC used in previous experiments is that it supports many modes within the telecommunication C-band because of poor axial confinement. For example, we found multiple resonant coupling peaks, which is not desirable for wavelength division multiplexing (WDM) switches. In order to increase the mode spacing of this 3D photonic coupler and to achieve single mode operation within the C-band, we propose efficient axial confinement in the microtube to suppress the higher order modes. Axial confinement in self-rolled-up microtubes had been studied both theoretically and experimentally by a couple of research groups.14–17 In all these previous cases, the axial confinement was introduced by a specially designed geometrical shape of a section of the microtube. After being rolled up, the microtube wall will have different thicknesses at different axial locations. The different wall thicknesses result in a slightly varying effective refractive index of the supported whispering gallery modes (WGMs) along the axial direction of the microtube. When a parabolic shape is used, the effective index of the WGM at the center of the parabola will be the highest and decrease adiabatically along both sides. However, the refractive index change due to different wall thicknesses is very small; hence, the axial confinement is rather weak. Here in this paper, we present our experimental endeavor to incorporate a different axial confinement scheme in the monolithically integrated vertical microtube (VμT) to form a vertical microring (VμR) resonator and demonstrate 3 times wider mode spacing than the microtube based vertical photonic coupler and the potential to achieve a higher Q-factor.

36 MATERIALS SCIENCE↗

Proton-conducting oxides for energy conversion and storage

Proton-conducting oxides are a class of solid-state ion-conducting ceramic materials that demonstrate significant hydrogen ion (proton) conductivity at intermediate temperatures (e.g., 300–700 °C). They are garnering significant attention due to several unique characteristics that distinguish them from both higher temperature oxygen ion conducting oxides and lower temperature proton-conducting polymers. By enabling proton-mediated electrochemistry under both dry and wet environments at moderate temperatures, protonic ceramics provide unique opportunities to enhance or synergize a diverse range of complementary electrochemical and thermochemical processes. Because of this potential, significant efforts have been devoted to advancing numerous energy-related applications using these materials. This review aims to comprehensively summarize these applications and analyze the most up-to-date and future developments of proton-conducting oxides. We aim to bring together this diverse subject matter by integrating the fundamentals of proton-conducting oxides with application-oriented insights. We begin with a historical roadmap, followed by a basic overview of the materials, theories and fundamentals, and fabrication and processing technologies underlying the field. The central section of our review summarizes major applications and developments of proton-conducting ceramics, ranging from maturing applications approaching commercialization to embryonic technologies just now emerging from the lab. These include protonic ceramic fuel cells, protonic ceramic electrolysis cells, reversible protonic ceramic electrochemical cells, protonic ceramic membrane reactors, and protonic ceramic electrochemical reactors. For each application, we analyze both the prospects and challenges and offer recommendations for future research directions so that tomorrow's researchers can continue to advance the development and commercialization of these fascinating materials.

Duan, Chuancheng (ORCID:0000000218261415)↗

Optical and microstructural studies of erbium-doped TiO 2 thin films on silicon, SrTiO 3 , and sapphire

Rare-earth ion doped oxide thin films integrated on silicon substrates provide a route toward scalable, chip-scale platforms for quantum coherent devices. Erbium-doped TiO 2 is an attractive candidate: the Er 3+ optical transition is compatible with C-band optical fiber communications, while TiO 2 is an insulating dielectric compatible with silicon process technology. Through structural and optical studies of Er-doped TiO 2 thin films grown via molecular beam deposition on silicon, SrTiO 3 , and sapphire substrates, we have explored the impact of polycrystallinity and microstructure on the optical properties of the Er emission. Comparing polycrystalline TiO 2 (rutile)/Si with single-crystalline TiO 2 (rutile)/r-sapphire and polycrystalline TiO 2 (anatase)/Si with single-crystalline TiO 2 (anatase)/SrTiO 3 , we observe that the inhomogeneous linewidth (Γ inh ) of the most prominent peak in the Er spectrum (the Y 1 –Z 1 transition, 1520 and 1533 nm in rutile and anatase TiO 2 ) is significantly narrower in the polycrystalline case. This implies a relative insensitivity to extended structural defects and grain boundaries in such films (as opposed to, e.g., point defects). We show that the growth of an undoped, underlying TiO 2 buffer on Si can reduce Γ inh by a factor of 4–5. Expectedly, Γ inh also reduces with decreasing Er concentrations: we observe a ∼2 order of magnitude reduction from ∼1000 ppm Er to ∼10 ppm Er. Γ inh then gets limited to a residual value of ∼5 GHz that is insensitive to further reduction in the Er concentration. Based upon the above results, we argue that the optical properties in these thin films are limited by the presence of high “grown-in” point defect concentrations.

Chemical elements↗

Nanomechanics of cellulose deformation reveal molecular defects that facilitate natural deconstruction

Significance Cellulose plays an important role as a structural polymer for natural material applications and as a source of sugars for production of renewable fuels and chemicals. Previously, kink defects have been observed in isolated cellulose nanofibrils. In this work, we provide direct evidence that these defects can be induced by mechanical deformation and are often accompanied by molecular-level bond breakages that are exploited by cellulase enzymes as initiation sites for processive hydrolysis. This relationship between mechanical stress and molecular defect formation has likely played a role in the evolution of both plants and natural cellulolytic enzyme systems. An improved understanding of these principles provides insight for the development of advanced cellulose utilization and processing technologies.

09 BIOMASS FUELS↗

Expressing Parallelism with ROOT

The need for processing the ever-increasing amount of data generated by the LHC experiments in a more efficient way has motivated ROOT to further develop its support for parallelism. Such support is being tackled both for shared-memory and distributed-memory environments. The incarnations of the aforementioned parallelism are multi-threading, multi-processing and cluster-wide executions. In the area of multi-threading, we discuss the new implicit parallelism and related interfaces, as well as the new building blocks to safely operate with ROOT objects in a multi-threaded environment. Regarding multi-processing, we review the new MultiProc framework, comparing it with similar tools (e.g. multiprocessing module in Python). Finally, as an alternative to PROOF for cluster-wide executions, we introduce the efforts on integrating ROOT with state-of-the-art distributed data processing technologies like Spark, both in terms of programming model and runtime design (with EOS as one of the main components). For all the levels of parallelism, we discuss, based on real-life examples and measurements, how our proposals can increase the productivity of scientists.

72 PHYSICS OF ELEMENTARY PARTICLES AND FIELDS↗

Total Ionizing Dose Effects on Strained Ge pMOS FinFETs on Bulk Si

In this paper, we have characterized the total ionizing dose response of strained Ge p MOS FinFETs built on bulk Si using a fin replacement process. Devices irradiated to 1.0 Mrad(SiO 2 ) show minimal transconductance degradation (less than 5%), very small V th shifts (less than 40 mV in magnitude) and very little ON/OFF current ratio degradation (<5%), and only modest variation in radiation response with transistor geometry (typically less than normal part-to-part variation). Both before and after irradiation, the performance of these strained Ge p MOS FinFETs is far superior to that of past generations of planar Ge p MOS devices. Finally, these improved properties result from significant improvements in processing technology, as well as the enhanced gate control provided by the strained Ge FinFET technology.

10 keV X-ray↗

ARENA: Asynchronous Reconfigurable Accelerator Ring to Enable Data-Centric Parallel Computing

The next generation HPC and data centers are likely to be reconfigurable and data-centric due to the trend of hardware specialization and the emergence of data-driven applications. In this work, we propose ARENA – an asynchronous reconfigurable accelerator ring architecture as a potential scenario on how the future HPC and data centers will be like. Despite using the coarse-grained reconfigurable arrays (CGRAs) as the substrate platform, our key contribution is not only the CGRA-cluster design itself, but also the ensemble of a new architecture and programming model that enables asynchronous tasking across a cluster of reconfigurable nodes, so as to bring specialized computation to the data rather than the reverse. We presume distributed data storage without asserting any prior knowledge on the data distribution. Hardware specialization occurs at runtime when a task finds the majority of data it requires are available at the present node. In other words, we dynamically generate specialized CGRA accelerators where the data reside. The asynchronous tasking for bringing computation to data is achieved by circulating the task token, which describes the dataflow graphs to be executed for a task, among the CGRA cluster connected by a fast ring network. Evaluations on a set of HPC and data-driven applications across different domains show that ARENA can provide better parallel scalability with reduced data movement (53.9 percent). Compared with contemporary compute-centric parallel models, ARENA can bring on average 4.37× speedup. The synthesized CGRAs and their task-dispatchers only occupy 2.93mm 2 chip area under 45nm process technology and can run at 800MHz with on average 759.8mW power consumption. ARENA also supports the concurrent execution of multi-applications, offering ideal architectural support for future high-performance parallel computing and data analytics systems.

97 MATHEMATICS AND COMPUTING↗

A study on the impact of mid-gap defects on vertical GaN diodes

GaN is a favorable martial for future efficient high voltage power switches. GaN has not dominated the power electronics market due to immature substrate, homoepitaxial growth, and immature processing technology. Understanding the impact of the substrate and homoepitaxial growth on the device performance is crucial for boosting the performance of GaN. Here, we studied vertical GaN PiN diodes that were fabricated on non-homogenous Hydride Vapor Phase Epitaxy (HVPE) substrates from two different vendors. We show that defects which stemmed from growth techniques manifest themselves as leakage hubs. Different non-homogenous substrates showed different distribution of those defects spatially with the lesser quality substrates clustering those defects in clusters that causes pre-mature breakdown. Energetically these defects are mostly mid-gap around 1.8Ev with light emission spans from 450nm to 700nm. Photon emission spectrometry and hyperspectral electroluminescence were used to locate these defects spatially and energetically.

42 ENGINEERING↗

Above room temperature multiferroic and magnetoelectric properties of (1‐Φ) PZTFT‐Φ CZFMO particulate composites

Magnetoelectric (ME) composites of suitable ferroelectric and magnetic materials can display elevated magnetic and ferroelectric operational temperatures, along with substantial ME coupling, compared to conventional single-phase multiferroics. Herein, we describe the synthesis of (1-Φ) PZTFT-Φ CZFMO, Φ = 0.1, 0.2, 0.3 (PZTFT: [0.6(PbZr 0.53 Ti 0.47 O 3 )–0.4(PbFe 0.5 Ta 0.5 )O 3 ] CZFMO: Co 0.6 Zn 0.4 Fe 1.7 Mn 0.3 O 4 )] particulate (0–3) composites and report on the magnetic as well as ferroelectric phase transitions and magnetoelectric coupling. The phase formation and the induced strain in these composites are investigated via Raman spectroscopy. A large bifurcation of the zero-field cooled-field cooled magnetization curves confirms the highly anisotropic behavior of the composites. These curves also identify spin glass behavior in the CZFMO phase at ≈230 K. The magnetic phase transition of the composite (Φ = 0.2) is reported to be ≈532 (± 10) K. The temperature dependent dielectric data displays the ferroelectric phase transitions from the PZTFT phase and the broad relaxation peak from the CZFMO phase. The quadratic relationship between the magneto-capacitance and the magnetization confirms the existence of biquadratic magnetoelectric coupling in the systems. The collective results are consistent with the presence of a direct magneto-electric effect in the composites, i.e., by the application of magnetic field, the magnetic phase is strained, and this induced strain is responsible for changes of ferroelectric order parameter in the piezoelectric phase. As a result, this attribute makes the current composite structure a promising candidate for multiferroic data storage and processing technologies.

Bhoi, Krishnamayee↗

Poster — Thur Eve — 02: Measurement of CT radiation profile width using Fuji CR imaging plate raw data

Measuring the CT collimation width and assessing the shape of the overall profile is a relatively straightforward quality control (QC) measure that impacts both image quality and patient dose, and is often required at acceptance and routine testing. Most CT facilities have access to computed radiography (CR) systems, so performing CT collimation profile assessments using CR plates requires no additional equipment. Previous studies have shown how to effectively use CR plates to measure the radiation profile width. However, a major limitation of the previous work is that the full dynamic range of CR detector plates are not used, since the CR processing technology reduces the dynamic range of the DICOM output to 2{sup 10}, requiring the sensitivity and latitude settings of CR reader to be adjusted to prevent clipping of the CT profile data. Such adjustments to CR readers unnecessarily complicate the QC procedure. These clipping artefacts hinder the ability to accurately assess CT collimation width because the full-width at half maximum value of the penumbras are not properly determined if the maximum dose of the profile is not available. Furthermore, any inconsistencies in the radiation profile shape are lost if the profile plateau is clipped off. In this work we developed an opensource Matlab script for straightforward CT profile width measurements using raw CR data that also allows assessment of the profile shape without clipping, and applied this approach during CT QC.

60 APPLIED LIFE SCIENCES↗

Direct visualization of electromagnetic wave dynamics by laser-free ultrafast electron microscopy

Integrating femtosecond lasers with electron microscopies has enabled direct imaging of transient structures and morphologies of materials in real time and space. Here, we report the development of a laser-free ultrafast electron microscopy (UEM) offering the same capability but without requiring femtosecond lasers and intricate instrumental modifications. We create picosecond electron pulses for probing dynamic events by chopping a continuous beam with a radio frequency (RF)–driven pulser with the pulse repetition rate tunable from 100 MHz to 12 GHz. As a first application, we studied gigahertz electromagnetic wave propagation dynamics in an interdigitated comb structure. We reveal, on nanometer space and picosecond time scales, the transient oscillating electromagnetic field around the tines of the combs with time-resolved polarization, amplitude, and local field enhancement. This study demonstrates the feasibility of laser-free UEM in real-space visualization of dynamics for many research fields, especially the electrodynamics in devices associated with information processing technology.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Formation of nanosize structures on a silicon substrate by method of focused ion beams

The results of experimental studies of modes in which nanosize structures are formed on a silicon substrate by method of focused ion beams are presented. Dependences of the diameter and depth of the nanosize structures on the ion beam current and time of exposure to the ion beam at a point are obtained. It is demonstrated that the main factor determining the rate of ion-beam milling is the ion beam current. The results of the study can be used in the development of technological processes for the fabrication of components for nanoelectronics and nanosystems engineering.

36 MATERIALS SCIENCE↗

Formation of a memristor matrix based on titanium oxide and investigation by probe-nanotechnology methods

The results of investigation of a memristor-matrix model on the basis of titanium-oxide nanoscale structures (ONSs) fabricated by methods of focused ion beams and atomic-force microscopy (AFM) are presented. The effect of the intensity of interaction between the AFM probe and the sample surface on the memristor effect in the titanium ONS is shown. The memristor effect in the titanium ONS is investigated by an AFM in the mode of spreading-resistance map. The possibility of the recording and erasure of information in the submicron cells is shown on the basis of using the memristor effect in the titanium ONS, which is most promising for developing the technological processes of the formation of resistive operation memory cells.

36 MATERIALS SCIENCE↗

Study of the phase composition of nanostructures produced by the local anodic oxidation of titanium films

The results of experimental studies of the phase composition of oxide nanostructures formed by the local anodic oxidation of a titanium thin film are reported. The data of the phase analysis of titanium-oxide nanostructures are obtained by X-ray photoelectron spectroscopy in the ion profiling mode of measurements. It is established that the surface of titanium-oxide nanostructures 4.5 ± 0.2 nm in height possesses a binding energy of core levels characteristic of TiO{sub 2} (458.4 eV). By analyzing the titanium-oxide nanostructures in depth by X-ray photoelectron spectroscopy, the formation of phases with binding energies of core levels characteristic of Ti{sub 2}O{sub 3} (456.6 eV) and TiO (454.8 eV) is established. The results can be used in developing the technological processes of the formation of a future electronic-component base for nanoelectronics on the basis of titanium-oxide nanostructures and probe nanotechnologies.

36 MATERIALS SCIENCE↗

Selective Epitaxial Growth of III–N Structures Using Ion-Beam Nanolithography

The selective epitaxial growth of GaN by metalorganic vapor-phase epitaxy combined with ion-beam etching is investigated. To this end, partially masked GaN epitaxial layers are fabricated by depositing a thin Si{sub 3}N{sub 4} layer onto the surface in a single technological process with the growth of GaN and the subsequent opening of windows of different shapes in this layer by an ion beam. Selective epitaxial growth regimes are studied. It is shown that, in a situation where the total area of the windows in the mask is small relative to the total area of the sample, the required epitaxy duration should be 5–10 s, which impairs the reproducibility of the parameters of the epitaxial process. It is also shown that the mechanism of the selective growth of submicrometer objects differs significantly from that for planar layers and selectively grown layers with dimensions of ~1 μm or greater. The effect of precursor (trimethylgallium and ammonia) fluxes on the character of selective epitaxy is examined. To investigate the possibilities of varying mask topology for fabricating model objects with regard to photonic crystals, the impact of the shape and orientation of the windows in the Si{sub 3}N{sub 4} mask on the character of selective epitaxy is studied.

36 MATERIALS SCIENCE↗

Analytical Model for Atomic-Layer Deposition of Thin Films on the Walls of Cylindrical Holes with a Relatively High Aspect Ratio

A theoretical model that predicts the thickness of a film grown on the walls of high-aspect-ratio cylindrical hole using the atomic-layer deposition is proposed. The model can be used to calculate the critical time of precursor supply needed for conformal coating of the walls. An analytical model is derived to estimate the minimum time of precursor supply versus parameters of the technological process.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗

Model of a SiGe 130-nm 10- to 30-GHz Chaotic Self-Oscillating System

The problem of generation of utlrawideband chaotic oscillations in the frequency range of 10–30 GHz is considered. This problem is relevant to fifth-generation communication systems. A generator model designed for the silicon–germanium 130-nm process technology is proposed and studied.

71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSIC↗

A finalized determinant for complete lignocellulose enzymatic saccharification potential to maximize bioethanol production in bioenergy Miscanthus

Miscanthus is a leading bioenergy crop with enormous lignocellulose production potential for biofuels and chemicals. However, lignocellulose recalcitrance leads to biomass process difficulty for an efficient bioethanol production. Hence, it becomes essential to identify the integrative impact of lignocellulose recalcitrant factors on cellulose accessibility for biomass enzymatic hydrolysis. In this study, we analyzed four typical pairs of Miscanthus accessions that showed distinct cell wall compositions and sorted out three major factors that affected biomass saccharification for maximum bioethanol production. Among the three optimal (i.e., liquid hot water, H 2 SO 4 and NaOH) pretreatments performed, mild alkali pretreatment (4% NaOH at 50 °C) led to almost complete biomass saccharification when 1% Tween-80 was co-supplied into enzymatic hydrolysis in the desirable Miscanthus accessions. Consequently, the highest bioethanol yields were obtained at 19% (% dry matter) from yeast fermentation, with much higher sugar–ethanol conversion rates by 94–98%, compared to the other Miscanthus species subjected to stronger pretreatments as reported in previous studies. By comparison, three optimized pretreatments distinctively extracted wall polymers and specifically altered polymer features and inter-linkage styles, but the alkali pretreatment caused much increased biomass porosity than that of the other pretreatments. Based on integrative analyses, excellent equations were generated to precisely estimate hexoses and ethanol yields under various pretreatments and a hypothetical model was proposed to outline an integrative impact on biomass saccharification and bioethanol production subjective to a predominate factor (CR stain) of biomass porosity and four additional minor factors (DY stain, cellulose DP, hemicellulose X/A, lignin G-monomer). Using four pairs of Miscanthus samples with distinct cell wall composition and varied biomass saccharification, this study has determined three main factors of lignocellulose recalcitrance that could be significantly reduced for much-increased biomass porosity upon optimal pretreatments. It has also established a novel standard that should be applicable to judge any types of biomass process technology for high biofuel production in distinct lignocellulose substrates. Hence, this study provides a potential strategy for precise genetic modification of lignocellulose in all bioenergy crops.

09 BIOMASS FUELS↗