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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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At least 595 records · Page 33
All sourcesNASA NTRSDOE OSTI
NASA NTRS1985

Fractography of the interlaminar fracture of carbon-fibre epoxy composites

The failed surfaces of interlaminar fracture (mode I) specimens of AS4/3501-6 were examined using scanning electron microscopy. The principal fracture features were fiber pull-out (bundles and single fibers), hackle markings, and regions of smooth resin fracture. Considerable (30 to 50 percent) relaxation of the deformed resin occurred when the specimens were heated above the matrix glass transition temperature. This relaxation was taken as evidence of extensive shear yielding of the resin during the fracture process. Some of the fractography features are discussed in terms of transverse tensile stresses and peeling stresses acting on the fibers. In some instances these localized stresses focus failure close to the resin-fiber interface, which can be mistakenly interpreted as interfacial failure and low fiber-resin adhesion.

Bascom, W. D.↗
NASA NTRS1986

Making High-Porosity Alloy Spheroids

Noncontact process yields low-density, porous microstructure. Small spheroids of porous alloys with large surface area per unit volume produced by containerless processing method. Without container walls to serve as nucleation sites, alloy cools to well below normal freezing point without solidifying. Solidification then proceeds rapidly; interdendritic liquid pulled out by growing crystals, resulting in porous microstructure. The more rapid the cooling rate, the faster crystals grow and more porous solid becomes. Drop-tube method useful in creating porous microstructures from other materials including oxides, carbides, and organic materials. Other means of containerless processing - acoustic or air-jet levitation, low-gravity float melting, melt spinning, or jet spraying, adapted to process.

Ethridge, E. C.↗
NASA NTRS1986

Ejection Mechanism for Circuit Boards

Damage to connectors reduced and special tools not needed. Clockwise rotation of screw tightens wedges against mounting body and right heat sink. Counterclockwise rotation of screw drives bottom wedge downward and jacking ring upward, pulling pins away from mating connector. Screw in mechanism turned to produce jacking force that disengages board from mating connector. Force parallel to connector pins do not bend or brake. When disengaged, board protrudes from assembly and readily grasped by operator.

Houff, T. L.↗
NASA NTRS1986

Non-Back-Drivable, Freewheeling Coupling

Cables reeled in and out with less risk of tangling. Opposing teeth engage with clockwise rotation and disengage with clockwise rotation of crank. Driving plate moves axially with respect to driven plate on ball points to engage and disengage. Clutch developed for reeling and unreeling tether line used to link astronaut to space vehicle. Allows line pulled out freely and helps to prevent line from tangling in reel housing when crank is turned backward. New clutch concept also applicable to fishing reels, toys, and safety-line mechanisms.

Llewellin, W.↗
NASA NTRS1986

Receptacle for Optical-Fiber Scraps

Small pieces of glass trapped by moving air. Device traps fibers in section of black air-conditioner filter material. Filter section rests on metal screen above axial fan, which pulls air down through filter. Fan is small, quiet unit of type ordinarily used to cool electronic equipment.

Nevin, R.↗
NASA NTRS1986

Centrally-Rupturing Squib-Closure Disks

Rupture-disk design makes squib action more predictable. In new design, center of rupture disk contains cruciform indentation in which thickness reduced to about 0.5 mil (0.013 mm). Reduces strength of center of rupture disk in same manner as that of pull tabs on beverage cans; therefore, disk will fail predictably in center.

Richter, R.↗
NASA NTRS1985

Failure mechanisms of laminates transversely loaded by bolt push-through

Stiffened composite panels proposed for fuselage and wing design utilize a variety of stiffener-to-skin attachment concepts including mechanical fasteners. The attachment concept is an important factor influencing the panel's strength and can govern its performance following local damage. Mechanical fasteners can be an effective method for preventing stiffener-skin separation. One potential failure mode for bolted panels occurs when the bolts pull through the stiffener attachment flange or skin. The resulting loss of support by the skin to the stiffener and by the stiffener to the skin can result in local buckling and subsequent panel collapse. The characteristic failure modes associated with bolt push-through failure are described and the results of a parametric study of the effects that different material systems, boundary conditions, and laminates have on the forces and displacements required to cause damage and bolt pushthrough failure are presented.

Waters, W. A., Jr.↗
NASA NTRS1985

The status of silicon ribbon growth technology for high-efficiency silicon solar cells

More than a dozen methods have been applied to the growth of silicon ribbons, beginning as early as 1963. The ribbon geometry has been particularly intriguing for photovoltaic applications, because it might provide large area, damage free, nearly continuous substrates without the material loss or cost of ingot wafering. In general, the efficiency of silicon ribbon solar cells has been lower than that of ingot cells. The status of some ribbon growth techniques that have achieved laboratory efficiencies greater than 13.5% are reviewed, i.e., edge-defined, film-fed growth (EFG), edge-supported pulling (ESP), ribbon against a drop (RAD), and dendritic web growth (web).

Ciszek, T. F.↗
NASA NTRS1985

Simulation of the temperature distribution in crystals grown by Czochralski method

Production of perfect crystals, free of residual strain and dislocations and with prescribed dopant concentration, by the Czochralski method is possible only if the complex, interacting phenomena that affect crystal growth in a Cz-puller are fully understood and quantified. Natural and forced convection in the melt, thermocapillary effect and heat transfer in and around the crystal affect its growth rate, the shape of the crystal-melt interface and the temperature gradients in the crystal. The heat transfer problem in the crystal and between the crystal and all other surfaces present in the crystal pulling apparatus are discussed at length. A simulation and computer algorithm are used, based on the following assumptions: (1) only conduction occurs in the crystal (experimentally determined conductivity as a function of temperature is used), (2) melt temperature and the melt-crystal heat transfer coefficient are available (either as constant values or functions of radial position), (3) pseudo-steady state is achieved with respect to temperature gradients, (4) crystal radius is fixed, and (5) both direct and reflected radiation exchange occurs among all surfaces at various temperatures in the crystal puller enclosure.

Dudokovic, M. P.↗
NASA NTRS1985

Thermal-capillary model for Czochralski growth of semiconductor materials

The success of efficiently calculating the temperature field, crystal radius, melt mensicus, and melt/solid interface in the Czochralski crystal growth system by full finite-element solution of the government thermal-capillary model is demonstrated. The model predicts realistic response to changes in pull rate, melt volume, and the thermal field. The experimentally observed phenomena of interface flipping, bumping, and the difficulty maintaining steady-state growth as the melt depth decreases are explained by model results. These calculations will form the basis for the first quantitative picture of Cz crystal growth. The accurate depiction of the melt meniscus is important in calculating the crystal radius and solidification interface. The sensitivity of the results to the equilibrium growth angle place doubt on less sophisticated attempts to model the process without inclusion of the meniscus. Quantitative comparison with experiments should be possible once more representation of the radiation and view factors in the thermal system and the crucible are included. Extensions of the model in these directions are underway.

Derby, J. J.↗
NASA NTRS1985

KNbO3 single crystal growth by the radio frequency heating Czochralski method

A radio frequency heating Czochralski technique to obtain single crystal KNbO3 is first presented. The technological parameters of KNbO3 crystal growth by the Czochralski technique and its pulling conditions were studied in detail. The experiments on second harmonic generation using 1.06 micrometer Nd:YAG laser in KNbO3 have been conducted. The second harmonic efficiency for upconversion of KNbO3 is found to be as high as that of NaBa2Nb5O15. An automatic scanning measurement for the optical homogeneity of KNbO crystal is also described. KNbO3 is revealed to be a potentially useful nonlinear material for optical device applications.

Wang, W.↗
NASA NTRS1986

Thermal-mechanical fatigue behavior of nickel-base superalloys

The main achievements of a 36-month research program are presented. The main objective was to gain more insight into the problem of crack growth under thermal mechanical fatigue (TMF) conditions. This program was conducted at M.I.T. for the period of September 1982 to September 1985. The program was arranged into five technical tasks. Under Task I, the literature of TMF data was reviewed. The goal was to identify the crack propagation conditions in aircraft engines (hot section) and to assess the validity of conventional fracture mechanics parameters to address TMF crack growth. The second task defined the test facilities, test specimen and the testing conditions needed to establish the effectiveness of data correlation parameters identified in Task I. Three materials (Inconel X-750, Hastelloy-X, and B-1900) were chosen for the program. Task II was accomplished in collaboration with Pratt & Whitney Aircraft engineers. Under Task III, a computerized testing system to measure the TMF behavior (LCF and CG behaviors) of various alloys systems was built. The software used to run isothermal and TMF tests was also developed. Built around a conventional servohydraulic machine, the system is capable of push-pull tests under stress or strain and temperature controlled conditions in the temperature range of 25C to 1050C. A crack propagation test program was defined and conducted under Task IV. The test variables included strain range, strain rate (frequency) and temperature. Task V correlated and generalized the Task IV data for isothermal and variable temperature conditions so that several crack propagation parameters could be compared and evaluated. The structural damage (mode of cracking and dislocation substructure) under TMF cycling was identified and contrasted with the isothermal damage to achieve a sound fundamental mechanistic understanding of TMF.

Pelloux, R. M.↗
NASA NTRS1986

Sensitivity analysis for solar plates

Economic evaluation methods and analyses of emerging photovoltaic (PV) technology since 1976 was prepared. This type of analysis was applied to the silicon research portion of the PV Program in order to determine the importance of this research effort in relationship to the successful development of commercial PV systems. All four generic types of PV that use silicon were addressed: crystal ingots grown either by the Czochralski method or an ingot casting method; ribbons pulled directly from molten silicon; an amorphous silicon thin film; and use of high concentration lenses. Three technologies were analyzed: the Union Carbide fluidized bed reactor process, the Hemlock process, and the Union Carbide Komatsu process. The major components of each process were assessed in terms of the costs of capital equipment, labor, materials, and utilities. These assessments were encoded as the probabilities assigned by experts for achieving various cost values or production rates.

Aster, R. W.↗
NASA NTRS1986

A metallurgical route to solar-grade silicon

The aim of the process is to produce silicon for crystallization into ingots that can be sliced to wafers for processing into photovoltaic cells. If the potential purity can be realized, the silicon will also be applicable for ribbon pulling techniques where the purification during crystallization is negligible. The process consists of several steps: selection and purification of raw materials, carbothermic reduction of silica, ladle treatment, casting, crushing, leaching, and melting. The leaching step is crucial for high purity, and the obtainable purity is determined by the solidification before leaching. The most difficult specifications to fulfill are the low contents of boron, phosphorus, and carbon. Boron and phosphorus can be excluded from the raw materials, but the carbothermic reduction will unavoidably saturate the silicon with carbon at high temperature. During cooling carbon will precipitate as silicon carbide crystals, which will be harmful in solar cells. The cost of this solar silicon will depend strongly on the scale of production. It is as yet premature to give exact figures, but with a scale of some thousand tons per year, the cost will only be a few times the cost of ordinary metallurgical silicon.

Schei, A.↗
NASA NTRS1985

Addressable inverter matrix for process and device characterization

The addressable inverter matrix consists of 222 inverters each accessible with the aid of a shift register. The structure has proven useful in characterizing the variability of inverter transfer curves and in diagnosing processing faults. For good 3-micron CMOS bulk inverters investigated, the percent standard deviation of the inverter threshold voltage was less than one percent and the inverter gain (the slope of the inverter transfer curve at the inverter threshold vltage) was less than 3 percent. The average noise margin for the inverters was near 2 volts for a power supply voltage of 5 volts. The specific faults studied included undersize pull-down transistor widths and various open contacts in the matrix.

Buehler, M. G.↗
NASA NTRS1985

Silicon dendritic web growth thermal analysis task

A thermal analysis model is presented which describes the dendritic ribbon process. The model uses a melt-dendrite interface which projects out of the bulk melt as the basic interpretation of the ribbon production process. This is a marked departure from the interpretations of the interface phenomena which were used previously. The model was extensively illustrated with diagrams and pictures of ribbon samples. This model should have great impact on the analyses of experimental data as well as on future design modifications of ribbon-pulling equipment.

Richter, R.↗
NASA NTRS1985

Possible role of crustal flexure in the initial detachment of extensional allochthons

The existence of low-angle normal faults indicates that the ratio of shear stress (TAU) to normal stress (sigma sub N) needed to cause slip on faults is substantially less than would be predicted based on experimental data. Because the tensional strength of rock at a large scale is exceedingly low, the upper plate of a low-angle normal fault cannot be pulled down the fault ramp, but must be driven down it by its own weight. The active or recently active Sevier Desert detachment fault in western Utah dips regionally at 12 deg. The radio of shear stress to normal stress due to the weight of the upper plate on a 12 deg dipping fault surface is 0.2. In contrast, laboratory experiments indicate that slip on fracture surfaces occurs with almost all rock types when (tau/sigma) reaches values of 0.6 to 0.85, corresponding to normal-fault dips of 30 deg to 40 deg. Seismological data indicate that low deviatoric stresses are associated with movement on faults of other geometrics and are not unique to low-angle normal faults. It thus appears that approximately planar fault zones with surface areas of hundreds to thousands of square kilometers have different mechanical properties than would be predicted based on laboratory studies of fractured rock. Modeling of stresses indicates that deviatoric stresses greater than 5kb exist and are sustainable in oceanic lithosphere, and that failure occurs when tau/sigma sub N approaches 0.6 to 0.85.

Spencer, J. E.↗
NASA NTRS1986

Temperature sensitive oscillator

An oscillator circuit for sensing and indicating temperature by changing oscillator frequency with temperature comprises a programmable operational amplifier which is operated on the roll-off portion of its gain versus frequency curve and has its output directly connected to the inverting input to place the amplifier in a follower configuration. Its output is also connected to the non-inverting input by a capacitor with a crystal or other tuned circuit also being connected to the non-inverting input. A resistor is connected to the program input of the amplifier to produce a given set current at a given temperature, the set current varying with temperature. As the set current changes, the gain-bandwidth of the amplifier changes and, in turn, the reflected capacitance across the crystal changes, thereby providing the desired change in oscillator frequency by pulling the crystal. There is no requirement that a crystal employed with this circuit display either a linear frequency change with temperature or a substantial frequency change with temperature.

Kleinberg, L. L.↗