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Search indexed NASA NTRS and DOE OSTI research on propulsion, heat transfer, battery materials and energy systems. Follow report and document links to the original sources.

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605 records · Page 34
All sourcesNASA NTRSDOE OSTI
DOE OSTI2022

Exploring leakage in dielectric films via automated experiments in scanning probe microscopy

Here electronic conduction pathways in dielectric thin films are explored using automated experiments in scanning probe microscopy (SPM). In this study, we use large field of view scanning to identify the position of localized conductive spots and develop an SPM workflow to probe their dynamic behavior at higher spatial resolution as a function of time, voltage, and scanning process in an automated fashion. Using this approach, we observe the variable behaviors of the conductive spots in a 20-nm-thick ferroelectric Hf 0.54 Zr 0.48 O 2 film, where conductive spots disappear and reappear during continuous scanning. There are also fresh conductive spots that develop during scanning. The automated workflow is universal and can be integrated into a wide range of microscopy techniques, including SPM, electron microscopy, optical microscopy, and chemical imaging.

36 MATERIALS SCIENCE↗
DOE OSTI2022

TOF-SIMS analysis of decoherence sources in superconducting qubits

Superconducting qubits have emerged as a potentially foundational platform technology for addressing complex computational problems deemed intractable with classical computing. Despite recent advances enabling multiqubit designs that exhibit coherence lifetimes on the order of hundreds of μs, material quality and interfacial structures continue to curb device performance. Two-level system defects in the thin superconducting film and adjacent dielectric regions introduce stochastic noise and dissipate electromagnetic energy at the cryogenic operating temperatures. In this study, we utilize time-of-flight secondary ion mass spectrometry to understand the role specific fabrication procedures play in introducing such dissipation mechanisms in these complex systems. We interrogated Nb thin films and transmon qubit structures fabricated through slight modifications in the processing and vacuum conditions. We find that when the Nb film is sputtered onto the Si substrate, oxide and silicide regions are generated at various interfaces. We also observe that impurity species, such as niobium hydrides and carbides, are incorporated within the niobium layer during the subsequent lithographic patterning steps. The formation of these resistive compounds likely impacts the superconducting properties of the Nb thin film. Additionally, we observe the presence of halogen species distributed throughout the patterned thin films. We conclude by hypothesizing the source of such impurities in these structures in an effort to intelligently fabricate superconducting qubits and extend coherence times moving forward.

75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND↗
DOE OSTI2022

The Gaussian nature of the band-edge of ZnO microcrystalline thin films

A straightforward analytical approach based on the derivative of the absorption coefficient is presented, which enables probing the nature of the band edge (BE) of ZnO microcrystalline films. The study was conducted via transmission experiments at temperatures of 77–532 K and repeated for samples annealed up to 1073 K. It was found that the derivative of the natural log of the BE absorption coefficient resulted in a Gaussian function. The Gaussian linewidth is used in the electron–phonon (e–p) interaction model to characterize the defect-state of the films. The BE of the as-grown film was found to exhibit no thermal dependence and no e–p coupling, indicative of a disordered crystal. Upon annealing and improvement of the film quality, the thermal phonons became more activated, but only above room temperature with a phonon energy of ~75 meV, while up to room temperature, the impact of phonons on the BE is insignificant. A disorder–order transition was determined to take place at an annealing temperature of ~673 K. X-ray diffraction concurs with these results. The study indicates that the prevalent defects are of structural nature due to the inherent granular morphology of the films. This defect was found to dominate the behavior of the BE even at the elevated temperature regime rather than thermal phonons.

36 MATERIALS SCIENCE↗
DOE OSTI2025

From prediction to experimental realization of ferroelectric wurtzite Al1− x Gd x N alloys

AlN-based alloys find widespread application in high-power microelectronics, optoelectronics, and electromechanics. The realization of ferroelectricity in wurtzite AlN-based heterostructural alloys has opened up the possibility of directly integrating ferroelectrics with conventional microelectronics based on tetrahedral semiconductors, such as Si, SiC, and III–Vs, enabling compute-in-memory architectures, high-density data storage, and more. The discovery of AlN-based wurtzite ferroelectrics has been driven to date by chemical intuition and empirical explorations. Here, we demonstrate the computationally-guided discovery and experimental demonstration of new ferroelectric wurtzite Al1−xGdxN alloys. First-principles calculations indicate that the minimum energy pathway for switching changes from a collective to an individual switching process with a lower overall energy barrier, at a rare-earth fraction x with x > 0.10–0.15. Experimentally, ferroelectric switching is observed at room temperature in Al1−xGdxN films with x > 0.12, which strongly supports the switching mechanisms in wurtzite ferroelectrics proposed previously [Lee et al., Sci. Adv. 10, eadl0848 (2024)]. This is also the first demonstration of ferroelectricity in an AlN-based alloy with a magnetic rare-earth element, which could pave the way for additional functionalities such as multiferroicity and opto-ferroelectricity in this exciting class of AlN-based materials.

36 MATERIALS SCIENCE↗
DOE OSTI2025

Structural characterization of highly alloyed (Al,Gd)N thin films

Highly alloyed (Al,Gd)N is of potential interest in a variety of applications, including neutron detection and in devices such as non-volatile memory. Gd has been shown to have very low equilibrium solubility in AlN at room temperature; however, non-equilibrium deposition techniques such as sputtering are able to deposit thin films, which incorporate large amounts of Gd. Here, we characterize a highly-alloyed (Al,Gd)N combinatorial thin film grown by RF sputtering on a GaN substrate, looking for any evidence of chemical or phase segregation or structural disorder in the films. Compositions with between 13% and 32% Gd (on a cation basis) were studied. No evidence was found for chemical or phase segregation in any studied composition. Higher degrees of Gd incorporation led to greater structural disorder in the film and a tendency toward amorphization; however, electron diffraction shows that the film does not become fully amorphous at any of the studied compositions, instead retaining textured local order even at 32% Gd. Electron energy loss spectra suggest that the material retains a locally wurtzite-like tetrahedral bonding environment at all studied compositions.

36 MATERIALS SCIENCE↗
DOE OSTI2020

Microstructural evolution of nanotwinned Al-Zr alloy with significant 9R phase

Aluminum (Al) alloys have a multitude of applications, notably in the automotive, aerospace and coating industries, yet they exhibit significantly lower mechanical strength than conventional steels. Nanotwins drastically improve mechanical strength while retaining ductility. However, the high SFE of Al largely prevents twinning. Here, we synthesize Al-Zr alloy films containing an abundance of incoherent twin boundaries and 9R phases. These alloys exhibit an extended solid solubility of Zr, retaining a columnar nanotwinned structure across all compositions. These films reach a hardness up to 4.2 GPa with 10 at% Zr and demonstrate the capacity for producing strong Al alloys with nanotwins.

36 MATERIALS SCIENCE↗
DOE OSTI2023

Ultralightweight Power System for Human-Portable Linac-Based X-Ray Sources

Industrial human-portable X-ray sources are widely used by security, nuclear safeguard, and defense agencies. However, the employed sources have significant energy, dose, size, weight, and power (SWaP) limitations, greatly affecting their practical application. RF linear accelerators (linacs) can serve as a flexible, reliable, and robust type of X-ray source if they can match the size, weight, cost, and imaging performance requirements of conventional ones. One of the most critical elements affecting these parameters is the high-voltage pulsed power supply system or modulator, which can make the largest contribution to the total weight and dimensions of the accelerator. Here, in this article, we present the design and demonstration results of a novel ultra lightweight power system based on a 24-kV solid-state Marx modulator for a hand-portable 0.15–2.0-MeV Ku -band linac-based X-ray source.

47 OTHER INSTRUMENTATION↗
DOE OSTI2017

I. Final Report for DOE SBIR Phase I Project DE-SC0013795 Final Report for DOE SBIR Phase I Project DE-SC0013795 Microtron-based Compact, Portable Gamma-Ray Source

Microtron-based Compact, Portable Gamma-Ray Source. The objective of Phase I of this project was to produce a conceptual design of a prototype compact microtron electron accelerator, which could be designed, built, and demonstrated in Phase II of the project. The conceptual design study included an analysis of the parameters of the microtron and its components, and the expected performance of the prototype microtron as a source of x-rays and/or RF neutrons in the MeV energy range. The major components of the microtron are the magnet, the accelerating system, the power system, the vacuum system, the control system, the beam extraction system and the targets to produce x-rays (and/or neutrons). Our objectives for the design of the prototype were for it to be compact, cost-effective, capable of producing high intensity x-ray (an/or neutron) fluxes. In addition, the prototype was to be easily assembled and disassembled so that components could be easily replaced. The main parameters for the prototype are the following: the range of electron kinetic energies, the output power, the RF frequency band (X-band, C-band, or S-Band), the type of injection (Type I or Type II), the magnet type, i.e. permanent magnet, electromagnet, or a hybrid combination of permanent and electromagnet. The results of the Phase I study and analysis for a prototype microtron are the following: The electron energy range can be varied from below 6 MeV to 9 MeV, the optimal frequency range is S-Band (2-4 GHz) RF frequency, Type II injection (described below), and the magnet type is the hybrid version. The prototype version will be capable of producing gamma ray doses of ~1800 R/min-m and neutron fluxes of up to ~6 x 10 10 n/s with appropriate targets. The results of the Phase I study and analysis are provided below. The proposed Phase II plan was to demonstrate the prototype at low beam power. In the subsequent Phase III, high power tests would be performed, and the design of commercial versions of microtrons with various energies, sizes and types would be produced and marketed, including a more compact and more portable 6 MeV battery-powered model that more closely meets the requirements in the original FOA topic description. In the course of the Phase I study, we also identified another microtron version, one that was larger (not compact) and more powerful than that of the Phase II prototype, which could serve as an intense source of photo- neutrons, up to 4 x 10 12 n/s for use in nuclear medicine, short-lived isotope production, or other applications. In addition, it could produce gamma dose rates up to 130 kR/min-m with a heavy metal bremsstrahlung target. The results and specifications of this were submitted to IPAC16 (Reference [12]) the paper is included in Addendum B. Because this version was beyond the scope of the Phase I project, there is no additional description in the Final Report.

43 PARTICLE ACCELERATORS↗
DOE OSTI2016

Recommended Practice for Use of Emissive Probes in Electric Propulsion Testing

Here, this article provides recommended methods for building, operating, and taking plasma potential measurements from electron-emitting probes in electric propulsion devices, including Hall thrusters, gridded ion engines, and others. The two major techniques, the floating point technique and the inflection point technique, are described in detail as well as calibration and error-reduction methods. The major heating methods are described as well as the various considerations for emissive probe construction. Lastly, special considerations for electric propulsion plasmas are addressed, including high-energy densities, ion flows, magnetic fields, and potential fluctuations. Recommendations for probe design and operation are provided.

33 ADVANCED PROPULSION SYSTEMS↗
DOE OSTI2021

Antiferromagnetic Oxide Thin Films for Spintronic Applications

Antiferromagnetic oxides have recently gained much attention because of the possibility to manipulate electrically and optically the Néel vectors in these materials. Their ultrafast spin dynamics, long spin diffusion length and immunity to large magnetic fields make them attractive candidates for spintronic applications. Additionally, there have been many studies on spin wave and magnon transport in single crystals of these oxides. However, the successful applications of the antiferromagnetic oxides will require similar spin transport properties in thin films. In this work, we systematically show the sputtering deposition method for two uniaxial antiferromagnetic oxides, namely Cr2O3 and α-Fe2O3, on A-plane sapphire substrates, and identify the optimized deposition conditions for epitaxial films with low surface roughness. We also confirm the antiferromagnetic properties of the thin films. The deposition method developed in this article will be important for studying the magnon transport in these epitaxial antiferromagnetic thin films.

36 MATERIALS SCIENCE↗